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BTS710404ESEXUMA1 BTS710404ESEXUMA1 Infineon Technologies Infineon-BTS71040-4ESE-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01668b96d0930c88 Description: IC PWR DRVR N-CHAN 1:2 TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSDSO-24
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPOC2DBBTS710336ESPTOBO1 SPOC2DBBTS710336ESPTOBO1 Infineon Technologies Description: SPOC-2 DB BTS71033-6ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71033-6ESP
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SPOC2DBBTS712204ESPTOBO1 SPOC2DBBTS712204ESPTOBO1 Infineon Technologies Description: SPOC-2 DB BTS71220-4ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESP
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IRF7413ZTRPBFXTMA1 IRF7413ZTRPBFXTMA1 Infineon Technologies irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: PG-DSO-8-902
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
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IRLS3034-7PPBF IRLS3034-7PPBF Infineon Technologies irls3034-7ppbf.pdf?fileId=5546d462533600a401535671af462705 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
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AUIRLS3034-7P AUIRLS3034-7P Infineon Technologies auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Qualification: AEC-Q101
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IAUC60N06S5L073ATMA1 IAUC60N06S5L073ATMA1 Infineon Technologies Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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IRF7303TRPBFXTMA1 IRF7303TRPBFXTMA1 Infineon Technologies Infineon-IRF7303-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355f1c70a1afc Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
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XMC4400F64F512ABXQMA1 XMC4400F64F512ABXQMA1 Infineon Technologies XMC4400.pdf Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64
Number of I/O: 31
DigiKey Programmable: Not Verified
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XMC4200F64F256ABXQMA1 XMC4200F64F256ABXQMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
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IRLL024NPBF IRLL024NPBF Infineon Technologies irll024npbf.pdf?fileId=5546d462533600a401535664451725d3 description Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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S70FS01GSDSBHI210 S70FS01GSDSBHI210 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8 Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3249 Stücke:
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1+22.51 EUR
10+20.89 EUR
25+20.24 EUR
50+19.75 EUR
100+19.26 EUR
338+18.42 EUR
676+17.95 EUR
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S70FS01GSAGBHM213 S70FS01GSAGBHM213 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S70FS01GSAGBHM213 S70FS01GSAGBHM213 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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1+28.18 EUR
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25+25.30 EUR
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100+24.07 EUR
250+23.92 EUR
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S70FS01GSAGMFV010 S70FS01GSAGMFV010 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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10+22.49 EUR
25+21.78 EUR
50+21.25 EUR
240+20.08 EUR
480+19.57 EUR
720+19.28 EUR
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S70FS01GSDSBHV210 S70FS01GSDSBHV210 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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25+21.78 EUR
50+21.25 EUR
100+20.73 EUR
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S70FS01GSDSBHM210 S70FS01GSDSBHM210 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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1+28.99 EUR
10+26.87 EUR
25+26.03 EUR
50+25.39 EUR
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S70FS01GSAGBHI213 S70FS01GSAGBHI213 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S70FS01GSDSBHV213 S70FS01GSDSBHV213 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S70FS01GSDSBHB213 S70FS01GSDSBHB213 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S70FS01GSDSBHM213 S70FS01GSDSBHM213 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S70FS01GSAGBHM210 S70FS01GSAGBHM210 Infineon Technologies Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IQFH86N06NM5ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBL38620/2SOA PBL38620/2SOA Infineon Technologies PBL38620,2 v2.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
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IPI90R500C3XKSA2 IPI90R500C3XKSA2 Infineon Technologies Infineon-IPI90R500C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a88242955bd3 Description: MOSFET N-CH 900V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 200 Stücke:
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IPA90R340C3XKSA2 IPA90R340C3XKSA2 Infineon Technologies Infineon-IPA90R340C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cc90e320fa6 Description: MOSFET N-CH 900V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 330 Stücke:
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100+6.26 EUR
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IQE022N06LM5ATMA1 IQE022N06LM5ATMA1 Infineon Technologies Infineon-IQE022N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d719cfd51ba Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
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IQE022N06LM5ATMA1 IQE022N06LM5ATMA1 Infineon Technologies Infineon-IQE022N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d719cfd51ba Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
auf Bestellung 4927 Stücke:
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4+4.79 EUR
10+3.23 EUR
100+2.35 EUR
500+1.98 EUR
1000+1.84 EUR
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ISZ062N06NM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISZ022N06LM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
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IR1167ASTRPBF IR1167ASTRPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IR1167ASTRPBF IR1167ASTRPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
auf Bestellung 2466 Stücke:
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10+3.26 EUR
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100+2.68 EUR
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IR1167BSTRPBF IR1167BSTRPBF Infineon Technologies ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
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IRF2903ZPBF IRF2903ZPBF Infineon Technologies irf2903zpbf.pdf?fileId=5546d462533600a4015355dec87318fd Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
auf Bestellung 418 Stücke:
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185+2.65 EUR
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IQD020N10NM5CGATMA1 IQD020N10NM5CGATMA1 Infineon Technologies Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
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IQD020N10NM5CGATMA1 IQD020N10NM5CGATMA1 Infineon Technologies Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 4932 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.69 EUR
10+5.06 EUR
25+4.65 EUR
100+4.21 EUR
250+3.99 EUR
500+3.87 EUR
1000+3.76 EUR
2500+3.65 EUR
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KITLGPWRBOM010TOBO1 KITLGPWRBOM010TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL BOARD FOR IPT020N10N5
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPT020N10N5
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
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IAUZ40N10S5L120ATMA1 IAUZ40N10S5L120ATMA1 Infineon Technologies Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4188 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.75 EUR
11+1.75 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.85 EUR
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IRG7PH30K10DPBF IRG7PH30K10DPBF Infineon Technologies IRG7PH30K10DPBF.pdf Description: IGBT 1200V 30A 180W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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IRG7PH46UPBF IRG7PH46UPBF Infineon Technologies IRG7PH46UPbF%2CU-EP.pdf Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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AUIRFR2307Z AUIRFR2307Z Infineon Technologies AUIRFR2307Z.pdf Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BTS70402EPGXUMA1 BTS70402EPGXUMA1 Infineon Technologies Infineon-BTS7040-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e617836e449f Description: PROFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
10+1.89 EUR
25+1.72 EUR
100+1.53 EUR
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500+1.38 EUR
1000+1.34 EUR
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BTS70302EPGXUMA1 BTS70302EPGXUMA1 Infineon Technologies Infineon-BTS7030-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e61777e2449c Description: PROFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 13.5mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2784 Stücke:
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6+3.13 EUR
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IRF3007PBF IRF3007PBF Infineon Technologies irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908 description Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
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FF750R17ME7B11BPSA1 FF750R17ME7B11BPSA1 Infineon Technologies Infineon-FF750R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bbdf21695688 Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
auf Bestellung 4 Stücke:
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1+404.73 EUR
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CY9AFA42MAPMC-GNE2 CY9AFA42MAPMC-GNE2 Infineon Technologies Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
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CY9AF342LAPMC-GNE2 CY9AF342LAPMC-GNE2 Infineon Technologies Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD50R399CPATMA1 IPD50R399CPATMA1 Infineon Technologies Infineon-IPD50R399CP-DS-v02_01-en.pdf?fileId=db3a30432b16d655012b19cbfae82d36 Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 2315 Stücke:
Lieferzeit 10-14 Tag (e)
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BC846SH6433XTMA1 BC846SH6433XTMA1 Infineon Technologies bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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BC846SH6727XTSA1 BC846SH6727XTSA1 Infineon Technologies bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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CY7C53150-20AXIT CY7C53150-20AXIT Infineon Technologies Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PROCESSOR NEURON 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C53150-20AXIT CY7C53150-20AXIT Infineon Technologies Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC PROCESSOR NEURON 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+132.65 EUR
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BC 807-25 E6433 BC 807-25 E6433 Infineon Technologies bc807series_bc808series.pdf Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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IRF7103TRPBFXTMA1 IRF7103TRPBFXTMA1 Infineon Technologies irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6 Description: MOSFET 2N-CH 50V 3A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-DSO-8-902
auf Bestellung 3031 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
17+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.50 EUR
2000+0.46 EUR
Mindestbestellmenge: 11
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BAT60BE6359HTMA1 BAT60BE6359HTMA1 Infineon Technologies Infineon-BAT60BSERIES-DS-v01_01-en.pdf Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9307 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
43+0.41 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 27
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IPU50R950CEBKMA1 IPU50R950CEBKMA1 Infineon Technologies IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
auf Bestellung 5380 Stücke:
Lieferzeit 10-14 Tag (e)
1731+0.27 EUR
Mindestbestellmenge: 1731
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IPU50R950CEAKMA1 IPU50R950CEAKMA1 Infineon Technologies Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
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IPU50R2K0CE IPU50R2K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
2308+0.22 EUR
Mindestbestellmenge: 2308
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IPU50R3K0CE IPU50R3K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
auf Bestellung 250540 Stücke:
Lieferzeit 10-14 Tag (e)
2597+0.20 EUR
Mindestbestellmenge: 2597
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BTS5572EAUMA1 BTS5572EAUMA1 Infineon Technologies BTS5572E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 5
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
Produkt ist nicht verfügbar
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BTS710404ESEXUMA1 Infineon-BTS71040-4ESE-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01668b96d0930c88
BTS710404ESEXUMA1
Hersteller: Infineon Technologies
Description: IC PWR DRVR N-CHAN 1:2 TSDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 22.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:2
Supplier Device Package: PG-TSDSO-24
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SPOC2DBBTS710336ESPTOBO1
SPOC2DBBTS710336ESPTOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71033-6ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71033-6ESP
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.11 EUR
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SPOC2DBBTS712204ESPTOBO1
SPOC2DBBTS712204ESPTOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71220-4ESP
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESP
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.11 EUR
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IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
IRF7413ZTRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: PG-DSO-8-902
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
auf Bestellung 3588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.38 EUR
2000+0.35 EUR
Mindestbestellmenge: 13
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IRLS3034-7PPBF irls3034-7ppbf.pdf?fileId=5546d462533600a401535671af462705
IRLS3034-7PPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Produkt ist nicht verfügbar
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AUIRLS3034-7P auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586
AUIRLS3034-7P
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC60N06S5L073ATMA1 Infineon-IAUC60N06S5L073-DataSheet-v01_01-EN.pdf?fileId=5546d4627a0b0c7b017a1eb4f9c26feb
IAUC60N06S5L073ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 30A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 19µA
Supplier Device Package: PG-TDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
12+1.52 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
Mindestbestellmenge: 8
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IRF7303TRPBFXTMA1 Infineon-IRF7303-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355f1c70a1afc
IRF7303TRPBFXTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
auf Bestellung 6639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
14+1.35 EUR
100+0.89 EUR
500+0.70 EUR
1000+0.64 EUR
2000+0.60 EUR
Mindestbestellmenge: 9
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XMC4400F64F512ABXQMA1 XMC4400.pdf
XMC4400F64F512ABXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC4200F64F256ABXQMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4200F64F256ABXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-19
Number of I/O: 35
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLL024NPBF description irll024npbf.pdf?fileId=5546d462533600a401535664451725d3
IRLL024NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 3.1A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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S70FS01GSDSBHI210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8
S70FS01GSDSBHI210
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.51 EUR
10+20.89 EUR
25+20.24 EUR
50+19.75 EUR
100+19.26 EUR
338+18.42 EUR
676+17.95 EUR
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S70FS01GSAGBHM213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGBHM213
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSAGBHM213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGBHM213
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.18 EUR
10+26.12 EUR
25+25.30 EUR
50+24.68 EUR
100+24.07 EUR
250+23.92 EUR
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S70FS01GSAGMFV010 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGMFV010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.25 EUR
10+22.49 EUR
25+21.78 EUR
50+21.25 EUR
240+20.08 EUR
480+19.57 EUR
720+19.28 EUR
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S70FS01GSDSBHV210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSDSBHV210
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 329 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.25 EUR
10+22.49 EUR
25+21.78 EUR
50+21.25 EUR
100+20.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSDSBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSDSBHM210
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.99 EUR
10+26.87 EUR
25+26.03 EUR
50+25.39 EUR
100+24.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSAGBHI213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGBHI213
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSDSBHV213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSDSBHV213
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSDSBHB213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSDSBHB213
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSDSBHM213 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSDSBHM213
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70FS01GSAGBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70FS01GSAGBHM210
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IQFH86N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBL38620/2SOA PBL38620,2 v2.pdf
PBL38620/2SOA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Produkt ist nicht verfügbar
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IPI90R500C3XKSA2 Infineon-IPI90R500C3-DS-v01_00-en.pdf?fileId=db3a30432313ff5e0123a88242955bd3
IPI90R500C3XKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 740µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
10+4.91 EUR
100+3.97 EUR
Mindestbestellmenge: 4
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IPA90R340C3XKSA2 Infineon-IPA90R340C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cc90e320fa6
IPA90R340C3XKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.22 EUR
10+7.74 EUR
100+6.26 EUR
Mindestbestellmenge: 2
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IQE022N06LM5ATMA1 Infineon-IQE022N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d719cfd51ba
IQE022N06LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
Produkt ist nicht verfügbar
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IQE022N06LM5ATMA1 Infineon-IQE022N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701866d719cfd51ba
IQE022N06LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 48µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 30 V
auf Bestellung 4927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+3.23 EUR
100+2.35 EUR
500+1.98 EUR
1000+1.84 EUR
2000+1.76 EUR
Mindestbestellmenge: 4
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ISZ062N06NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISZ022N06LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR1167ASTRPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167ASTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR1167ASTRPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167ASTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+3.26 EUR
25+2.98 EUR
100+2.68 EUR
250+2.53 EUR
500+2.44 EUR
1000+2.37 EUR
Mindestbestellmenge: 5
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IR1167BSTRPBF ir1167aspbf.pdf?fileId=5546d462533600a4015355c45d9c1655
IR1167BSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 12V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 18ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 2A, 7A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF2903ZPBF irf2903zpbf.pdf?fileId=5546d462533600a4015355dec87318fd
IRF2903ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 25 V
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
185+2.65 EUR
Mindestbestellmenge: 185
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IQD020N10NM5CGATMA1 Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c
IQD020N10NM5CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
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IQD020N10NM5CGATMA1 Infineon-IQD020N10NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8cc0be053c
IQD020N10NM5CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 4932 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
10+5.06 EUR
25+4.65 EUR
100+4.21 EUR
250+3.99 EUR
500+3.87 EUR
1000+3.76 EUR
2500+3.65 EUR
Mindestbestellmenge: 3
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KITLGPWRBOM010TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UserManual-v02_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM010TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IPT020N10N5
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IPT020N10N5
Supplied Contents: Board(s)
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
IAUZ40N10S5L120ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
11+1.75 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.84 EUR
Mindestbestellmenge: 7
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IRG7PH30K10DPBF IRG7PH30K10DPBF.pdf
IRG7PH30K10DPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 30A 180W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 14ns/110ns
Switching Energy: 530µJ (on), 380µJ (off)
Test Condition: 600V, 9A, 22Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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IRG7PH46UPBF IRG7PH46UPbF%2CU-EP.pdf
IRG7PH46UPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
Produkt ist nicht verfügbar
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AUIRFR2307Z AUIRFR2307Z.pdf
AUIRFR2307Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BTS70402EPGXUMA1 Infineon-BTS7040-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e617836e449f
BTS70402EPGXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+1.89 EUR
25+1.72 EUR
100+1.53 EUR
250+1.44 EUR
500+1.38 EUR
1000+1.34 EUR
Mindestbestellmenge: 7
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BTS70302EPGXUMA1 Infineon-BTS7030-2EPG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c84a33f400184e61777e2449c
BTS70302EPGXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: Logic
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 13.5mOhm
Input Type: Non-Inverting
Voltage - Load: 3.1V ~ 18V
Voltage - Supply (Vcc/Vdd): 3.1V ~ 18V
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.31 EUR
25+2.10 EUR
100+1.88 EUR
250+1.77 EUR
500+1.70 EUR
1000+1.65 EUR
Mindestbestellmenge: 6
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IRF3007PBF description irf3007pbf.pdf?fileId=5546d462533600a4015355deea2a1908
IRF3007PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
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FF750R17ME7B11BPSA1 Infineon-FF750R17ME7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bbdf21695688
FF750R17ME7B11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
NTC Thermistor: No
Supplier Device Package: AG-ECONOD
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 750 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+404.73 EUR
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CY9AFA42MAPMC-GNE2
CY9AFA42MAPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 17x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 66
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF342LAPMC-GNE2
CY9AF342LAPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD50R399CPATMA1 Infineon-IPD50R399CP-DS-v02_01-en.pdf?fileId=db3a30432b16d655012b19cbfae82d36
IPD50R399CPATMA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 399mOhm @ 4.9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 100 V
auf Bestellung 2315 Stücke:
Lieferzeit 10-14 Tag (e)
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BC846SH6433XTMA1 bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf
BC846SH6433XTMA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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BC846SH6727XTSA1 bc846s_bc846u_bc847s.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d01144990b2e801cf
BC846SH6727XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN 65V 0.1A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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CY7C53150-20AXIT Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C53150-20AXIT
Hersteller: Infineon Technologies
Description: IC PROCESSOR NEURON 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C53150-20AXIT Infineon-CY7C53150_CY7C53120_Neuron_Chip_Network_Processor-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca599a4309&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C53150-20AXIT
Hersteller: Infineon Technologies
Description: IC PROCESSOR NEURON 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Interface: Serial
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Controller Series: CY7C531xx
Program Memory Type: FLASH (512 B)
Applications: Network Processor
Core Processor: Pipelined
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 19
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+132.65 EUR
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BC 807-25 E6433 bc807series_bc808series.pdf
BC 807-25 E6433
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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IRF7103TRPBFXTMA1 irf7103pbf.pdf?fileId=5546d462533600a4015355f0f0141ac6
IRF7103TRPBFXTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-DSO-8-902
auf Bestellung 3031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.50 EUR
2000+0.46 EUR
Mindestbestellmenge: 11
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BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
BAT60BE6359HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
43+0.41 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 27
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IPU50R950CEBKMA1 IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064
IPU50R950CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
auf Bestellung 5380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1731+0.27 EUR
Mindestbestellmenge: 1731
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IPU50R950CEAKMA1 Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPU50R950CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
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IPU50R2K0CE Part_Number_Guide_Web.pdf
IPU50R2K0CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2308+0.22 EUR
Mindestbestellmenge: 2308
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IPU50R3K0CE Part_Number_Guide_Web.pdf
IPU50R3K0CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
auf Bestellung 250540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2597+0.20 EUR
Mindestbestellmenge: 2597
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BTS5572EAUMA1 BTS5572E.pdf
BTS5572EAUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 5
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
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