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ISZ113N10NM5LFATMA1 ISZ113N10NM5LFATMA1 Infineon Technologies Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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ISZ113N10NM5LFATMA1 ISZ113N10NM5LFATMA1 Infineon Technologies Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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D1331SH45TXPSA1 D1331SH45TXPSA1 Infineon Technologies Infineon-D1331SH45T-DS-v10_02-EN.pdf?fileId=db3a304412b407950112b42fb5a14d0b Description: DIODE STANDARD 4500V 1710A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
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ADM5120PX-AB-R-2 ADM5120PX-AB-R-2 Infineon Technologies ADM5120P_PX.pdf Description: IC PROCESSOR NTWRK SOC 208-LQFP
Packaging: Tape & Reel (TR)
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Interface: Ethernet, UART, USB
RAM Size: 16K x 8
Voltage - Supply: 1.8V, 3.3V
Applications: Network Processor
Core Processor: 4Kc
Supplier Device Package: PG-LQFP-208
DigiKey Programmable: Not Verified
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KITMOTORDC250W24VTOBO1 KITMOTORDC250W24VTOBO1 Infineon Technologies Infineon-AN_250W_DriveCard-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169a10447b76f33 Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
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FF1200R12IE5BPSA1 FF1200R12IE5BPSA1 Infineon Technologies Infineon-FF1200R12IE5-DS-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a1d74b60a25ad Description: IGBT MOD 1200V 2400A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.5 nF @ 25 V
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FF1200R12IE5PBPSA1 Infineon Technologies Infineon-FF1200R12IE5P-DataSheet-v03_01-EN.pdf?fileId=5546d4625a888733015ab7d8024167c7 Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
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FF1200R17KE3NOSA1 FF1200R17KE3NOSA1 Infineon Technologies FF1200R17KE3_B2_Rev2.1_2013-10-02.pdf Description: IGBT MODULE VCES 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 595000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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IDW20G65C5BXKSA2 IDW20G65C5BXKSA2 Infineon Technologies Infineon-IDW20G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44f2f29d49b0 Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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FF500R17KE4BOSA1 FF500R17KE4BOSA1 Infineon Technologies Infineon-FF500R17KE4-DS-v02_00-EN.pdf?fileId=5546d462566bd0c7015678cc33d12de8 Description: IGBT MODULE 1700V 500A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
Produkt ist nicht verfügbar
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CYAT817AZS77-53C02 CYAT817AZS77-53C02 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 128-TQFP (14x20)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
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TT500N14KOFXPSA1 Infineon Technologies Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.4 kV
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PEB2095NVA5 PEB2095NVA5 Infineon Technologies SIEMS02121-1.pdf?t.download=true&u=5oefqw Description: DIGITAL SLIC, 1-FUNC, CMOS, PQCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 20mA
Supplier Device Package: PG-LCC-28-R
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PEB2095N-VA.5 PEB2095N-VA.5 Infineon Technologies SIEMS02121-1.pdf?t.download=true&u=5oefqw Description: OCTAT-P OCTAL TRANSCEICER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 20mA
Supplier Device Package: PG-LCC-28-R
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IRG4PSC71UPBF IRG4PSC71UPBF Infineon Technologies IRG4PSC71UPbF.pdf description Description: IGBT 600V 85A SUPER-247
Power - Max: 350 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 340 nC
Test Condition: 480V, 60A, 5Ohm, 15V
Switching Energy: 420µJ (on), 1.99mJ (off)
Td (on/off) @ 25°C: 34ns/56ns
Supplier Device Package: SUPER-247™ (TO-274AA)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Bag
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IRG4PSC71KPBF IRG4PSC71KPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 85A SUPER-247
Power - Max: 350 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 340 nC
Test Condition: 480V, 60A, 5Ohm, 15V
Switching Energy: 790µJ (on), 1.98mJ (off)
Td (on/off) @ 25°C: 34ns/54ns
Supplier Device Package: SUPER-247™ (TO-274AA)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Bag
Produkt ist nicht verfügbar
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IR21814PBF IR21814PBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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BA89202VH6327XTSA1 BA89202VH6327XTSA1 Infineon Technologies ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed Description: RF DIODE STANDARD 35V SC79-2
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Current - Max: 100 mA
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CY62167GE30-45BVXIT CY62167GE30-45BVXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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S25FL256SAGBHBA03 S25FL256SAGBHBA03 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
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CY14B256Q2-LHXI Infineon Technologies Infineon-CY14B256Q2-LHXI-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebff66c3481 Description: IC NVSRAM 256KBIT SPI 8DFN
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 32K x 8
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IPP17N25S3100AKSA1 IPP17N25S3100AKSA1 Infineon Technologies Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Description: MOSFET N-CH 250V 17A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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BCR320UHWLEDBOARDTOBO1 BCR320UHWLEDBOARDTOBO1 Infineon Technologies BCR320U_HW_LED_BRD_Web.pdf Description: EVAL BOARD FOR BCR320U
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: BCR320U
Current - Output / Channel: 150mA
Voltage - Input: 24V
Packaging: Box
Contents: Board(s)
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STK12C68-SF45 STK12C68-SF45 Infineon Technologies download Description: IC NVSRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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STK12C68-SF45I STK12C68-SF45I Infineon Technologies download Description: IC NVSRAM 64KBIT PARALLEL 28SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 28-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tube
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STK12C68-5L55M STK12C68-5L55M Infineon Technologies STK12C68-5 (SMD5962-94599).pdf Description: IC NVSRAM 64KBIT PARALLEL 28LCC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 28-LCC (13.97x8.89)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-LCC
Packaging: Tube
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IRG4IBC30UDPBF IRG4IBC30UDPBF Infineon Technologies irg4ibc30udpbf.pdf?fileId=5546d462533600a401535643a55b22ba Description: IGBT 600V 17A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/91ns
Switching Energy: 380µJ (on), 160µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 45 W
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F417MR12W1M1HB76BPSA1 F417MR12W1M1HB76BPSA1 Infineon Technologies F4-17MR12W1M1H_B76_Rev0.20_9-9-22.pdf Description: LOW POWER EASY
Packaging: Tray
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F433MR12W1M1HB76BPSA1 F433MR12W1M1HB76BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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24+169.33 EUR
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FS28MR12W1M1HB70BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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F417MR12W1M1HPB76BPSA1 F417MR12W1M1HPB76BPSA1 Infineon Technologies F4-17MR12W1M1HP_B76_Rev0.10_9-9-22.pdf Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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FF8MR12W1M1HB70BPSA1 FF8MR12W1M1HB70BPSA1 Infineon Technologies Infineon-FF8MR12W1M1H_B70-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b728bcf5a7c92 Description: MOSFET
Packaging: Tray
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F417MR12W1M1HB70BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Infineon Technologies Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
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FS45MR12W1M1PB11BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
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CYT2B97CABQ0AZEGS Infineon Technologies Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
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TLI493DW2BWA2XTSA1 TLI493DW2BWA2XTSA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
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TLI493DW2BWA2XTSA1 TLI493DW2BWA2XTSA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
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11+2.05 EUR
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500+1.59 EUR
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TLF44773LAXUMA1 Infineon Technologies Infineon-TLF4477-3LA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187a11ba6890960 Description: OPTIREG LINEAR PG-TSON-14
Packaging: Cut Tape (CT)
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S29GL256S10FHIV20 S29GL256S10FHIV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
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360+16.62 EUR
540+16.37 EUR
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S29GL256S10DHIV20 S29GL256S10DHIV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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50+17.85 EUR
100+17.41 EUR
260+16.81 EUR
520+16.4 EUR
1040+15.98 EUR
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CY8C24123A-24PXI CY8C24123A-24PXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
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D8320N06TVFXPSA1 D8320N06TVFXPSA1 Infineon Technologies Infineon-D8320N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffeadc375c8b Description: DIODE STANDARD 600V 8320A
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8320A
Operating Temperature - Junction: -25°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Produkt ist nicht verfügbar
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S29JL032J70TFI313 S29JL032J70TFI313 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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S29JL032J70TFI313 S29JL032J70TFI313 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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3+8.48 EUR
10+7.89 EUR
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50+7.49 EUR
100+7.31 EUR
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CYT2B64BADQ0AZSGS CYT2B64BADQ0AZSGS Infineon Technologies Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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CYT2B64BADQ0AZEGS Infineon Technologies Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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CYT2B63CADQ0AZSGS CYT2B63CADQ0AZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
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IR2235STRPBF IR2235STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2235STRPBF IR2235STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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2+15.54 EUR
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S25FL128LAGMFB013 S25FL128LAGMFB013 Infineon Technologies S25FL.pdf Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S25FL128LAGMFB013 S25FL128LAGMFB013 Infineon Technologies S25FL.pdf Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CYPD6125-40LQXIT CYPD6125-40LQXIT Infineon Technologies infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
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CYPD6125-40LQXIT CYPD6125-40LQXIT Infineon Technologies infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
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KITXMC12BOOT001TOBO1 KITXMC12BOOT001TOBO1 Infineon Technologies Board_Users_Manual_XMC1200_CPU_Card_R2.pdf?folderId=db3a304334fac4c601350a01037e11d2&fileId=db3a30433da5396c013da5c4fc22008f&ack=t Description: BOOT KIT XMC1200 EVAL BRD
Packaging: Tray
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1200
Platform: Boot Kit
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BC817-16W BC817-16W Infineon Technologies PIRSS13150-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
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1EDN9550BXTSA1 1EDN9550BXTSA1 Infineon Technologies Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDN9550BXTSA1 1EDN9550BXTSA1 Infineon Technologies Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
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15+1.43 EUR
21+1.02 EUR
25+0.92 EUR
100+0.81 EUR
250+0.75 EUR
500+0.71 EUR
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EUFDZ0332-CY Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD251B1W0201E6327XTSA1 ESD251B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD251-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb942cee55496 Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 30pF @ 1GHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.6V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
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ISZ113N10NM5LFATMA1
ISZ113N10NM5LFATMA1
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISZ113N10NM5LFATMA1
ISZ113N10NM5LFATMA1
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TSDSON-8 FL
Vgs(th) (Max) @ Id: 3.9V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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D1331SH45TXPSA1 Infineon-D1331SH45T-DS-v10_02-EN.pdf?fileId=db3a304412b407950112b42fb5a14d0b
D1331SH45TXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 4500V 1710A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.2 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
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ADM5120PX-AB-R-2 ADM5120P_PX.pdf
ADM5120PX-AB-R-2
Hersteller: Infineon Technologies
Description: IC PROCESSOR NTWRK SOC 208-LQFP
Packaging: Tape & Reel (TR)
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Interface: Ethernet, UART, USB
RAM Size: 16K x 8
Voltage - Supply: 1.8V, 3.3V
Applications: Network Processor
Core Processor: 4Kc
Supplier Device Package: PG-LQFP-208
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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KITMOTORDC250W24VTOBO1 Infineon-AN_250W_DriveCard-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169a10447b76f33
KITMOTORDC250W24VTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XMC1300
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC1300
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: Yes, MCU
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FF1200R12IE5BPSA1 Infineon-FF1200R12IE5-DS-v03_00-EN.pdf?fileId=5546d46259d9a4bf015a1d74b60a25ad
FF1200R12IE5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 2400A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 2400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 65.5 nF @ 25 V
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FF1200R12IE5PBPSA1 Infineon-FF1200R12IE5P-DataSheet-v03_01-EN.pdf?fileId=5546d4625a888733015ab7d8024167c7
Hersteller: Infineon Technologies
Description: PP, IHM I, XHP 1,7KV
Packaging: Bulk
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FF1200R17KE3NOSA1 FF1200R17KE3_B2_Rev2.1_2013-10-02.pdf
FF1200R17KE3NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE VCES 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 595000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
Produkt ist nicht verfügbar
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IDW20G65C5BXKSA2 Infineon-IDW20G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44f2f29d49b0
IDW20G65C5BXKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
auf Bestellung 132 Stücke:
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2+18.35 EUR
30+10.83 EUR
120+9.17 EUR
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FF500R17KE4BOSA1 Infineon-FF500R17KE4-DS-v02_00-EN.pdf?fileId=5546d462566bd0c7015678cc33d12de8
FF500R17KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 500A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 500A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 500 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
Produkt ist nicht verfügbar
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CYAT817AZS77-53C02 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS77-53C02
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Packaging: Tray
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 128-TQFP (14x20)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Produkt ist nicht verfügbar
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TT500N14KOFXPSA1 Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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PEB2095NVA5 SIEMS02121-1.pdf?t.download=true&u=5oefqw
PEB2095NVA5
Hersteller: Infineon Technologies
Description: DIGITAL SLIC, 1-FUNC, CMOS, PQCC
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 20mA
Supplier Device Package: PG-LCC-28-R
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25+21.53 EUR
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PEB2095N-VA.5 SIEMS02121-1.pdf?t.download=true&u=5oefqw
PEB2095N-VA.5
Hersteller: Infineon Technologies
Description: OCTAT-P OCTAL TRANSCEICER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 20mA
Supplier Device Package: PG-LCC-28-R
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25+21.53 EUR
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IRG4PSC71UPBF description IRG4PSC71UPbF.pdf
IRG4PSC71UPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 85A SUPER-247
Power - Max: 350 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 340 nC
Test Condition: 480V, 60A, 5Ohm, 15V
Switching Energy: 420µJ (on), 1.99mJ (off)
Td (on/off) @ 25°C: 34ns/56ns
Supplier Device Package: SUPER-247™ (TO-274AA)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Bag
Produkt ist nicht verfügbar
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IRG4PSC71KPBF fundamentals-of-power-semiconductors
IRG4PSC71KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 85A SUPER-247
Power - Max: 350 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 340 nC
Test Condition: 480V, 60A, 5Ohm, 15V
Switching Energy: 790µJ (on), 1.98mJ (off)
Td (on/off) @ 25°C: 34ns/54ns
Supplier Device Package: SUPER-247™ (TO-274AA)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Bag
Produkt ist nicht verfügbar
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IR21814PBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21814PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BA89202VH6327XTSA1 ba592_ba892series.pdf?folderId=db3a304314dca3890114fde87a7a09ec&fileId=db3a304314dca3890114fde8f46109ed
BA89202VH6327XTSA1
Hersteller: Infineon Technologies
Description: RF DIODE STANDARD 35V SC79-2
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SC79-2
Current - Max: 100 mA
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4724+0.11 EUR
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CY62167GE30-45BVXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE30-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGBHBA03 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGBHBA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY14B256Q2-LHXI Infineon-CY14B256Q2-LHXI-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebff66c3481
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT SPI 8DFN
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-DFN (5x6)
Memory Interface: SPI
Access Time: 9 ns
Memory Organization: 32K x 8
Produkt ist nicht verfügbar
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IPP17N25S3100AKSA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPP17N25S3100AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 17A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
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210+2.77 EUR
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BCR320UHWLEDBOARDTOBO1 BCR320U_HW_LED_BRD_Web.pdf
BCR320UHWLEDBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BCR320U
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: BCR320U
Current - Output / Channel: 150mA
Voltage - Input: 24V
Packaging: Box
Contents: Board(s)
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AnzahlPrivatkunde
1+31.99 EUR
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STK12C68-SF45 download
STK12C68-SF45
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK12C68-SF45I download
STK12C68-SF45I
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 45 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Supplier Device Package: 28-SOIC
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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STK12C68-5L55M STK12C68-5 (SMD5962-94599).pdf
STK12C68-5L55M
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT PARALLEL 28LCC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 28-LCC (13.97x8.89)
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-LCC
Packaging: Tube
Produkt ist nicht verfügbar
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IRG4IBC30UDPBF irg4ibc30udpbf.pdf?fileId=5546d462533600a401535643a55b22ba
IRG4IBC30UDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 17A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/91ns
Switching Energy: 380µJ (on), 160µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 45 W
Produkt ist nicht verfügbar
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F417MR12W1M1HB76BPSA1 F4-17MR12W1M1H_B76_Rev0.20_9-9-22.pdf
F417MR12W1M1HB76BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 19 Stücke:
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AnzahlPrivatkunde
1+187.72 EUR
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F433MR12W1M1HB76BPSA1
F433MR12W1M1HB76BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
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1+185.49 EUR
24+169.33 EUR
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FS28MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 28 Stücke:
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1+210.15 EUR
24+168.84 EUR
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F417MR12W1M1HPB76BPSA1 F4-17MR12W1M1HP_B76_Rev0.10_9-9-22.pdf
F417MR12W1M1HPB76BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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1+178.25 EUR
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FF8MR12W1M1HB70BPSA1 Infineon-FF8MR12W1M1H_B70-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b728bcf5a7c92
FF8MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tray
Produkt ist nicht verfügbar
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F417MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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FF45MR12W1M1B11BOMA1 Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c
FF45MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
auf Bestellung 32 Stücke:
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4+122.43 EUR
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FS45MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Produkt ist nicht verfügbar
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CYT2B97CABQ0AZEGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
Produkt ist nicht verfügbar
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TLI493DW2BWA2XTSA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA2XTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
Produkt ist nicht verfügbar
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TLI493DW2BWA2XTSA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA2XTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
auf Bestellung 3598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
10+2.15 EUR
11+2.05 EUR
25+1.92 EUR
50+1.83 EUR
100+1.75 EUR
500+1.59 EUR
1000+1.54 EUR
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TLF44773LAXUMA1 Infineon-TLF4477-3LA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187a11ba6890960
Hersteller: Infineon Technologies
Description: OPTIREG LINEAR PG-TSON-14
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
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4+5.38 EUR
10+4.83 EUR
25+4.57 EUR
100+3.96 EUR
250+3.76 EUR
500+3.37 EUR
1000+2.84 EUR
2500+2.7 EUR
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S29GL256S10FHIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10FHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
auf Bestellung 1223 Stücke:
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2+20.29 EUR
10+18.86 EUR
25+18.28 EUR
50+17.85 EUR
180+17.05 EUR
360+16.62 EUR
540+16.37 EUR
1080+15.96 EUR
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S29GL256S10DHIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10DHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1206 Stücke:
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AnzahlPrivatkunde
2+20.29 EUR
10+18.86 EUR
25+18.28 EUR
50+17.85 EUR
100+17.41 EUR
260+16.81 EUR
520+16.4 EUR
1040+15.98 EUR
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CY8C24123A-24PXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24123A-24PXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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D8320N06TVFXPSA1 Infineon-D8320N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffeadc375c8b
D8320N06TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 8320A
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8320A
Operating Temperature - Junction: -25°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Produkt ist nicht verfügbar
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S29JL032J70TFI313 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI313
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29JL032J70TFI313 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI313
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 976 Stücke:
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3+8.48 EUR
10+7.89 EUR
25+7.66 EUR
50+7.49 EUR
100+7.31 EUR
250+7.07 EUR
500+6.89 EUR
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CYT2B64BADQ0AZSGS Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd
CYT2B64BADQ0AZSGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT2B64BADQ0AZEGS Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT2B63CADQ0AZSGS Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63CADQ0AZSGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2235STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2235STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 922 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.54 EUR
10+12.04 EUR
25+11.16 EUR
100+10.21 EUR
250+9.97 EUR
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S25FL128LAGMFB013 S25FL.pdf
S25FL128LAGMFB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL128LAGMFB013 S25FL.pdf
S25FL128LAGMFB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2100 Stücke:
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AnzahlPrivatkunde
4+6.18 EUR
10+5.76 EUR
25+5.59 EUR
50+5.46 EUR
100+5.33 EUR
250+5.16 EUR
500+5.05 EUR
1000+4.91 EUR
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CYPD6125-40LQXIT infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf
CYPD6125-40LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
Produkt ist nicht verfügbar
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CYPD6125-40LQXIT infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf
CYPD6125-40LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
auf Bestellung 737 Stücke:
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AnzahlPrivatkunde
2+11.69 EUR
10+8.98 EUR
25+8.29 EUR
100+7.54 EUR
250+7.21 EUR
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KITXMC12BOOT001TOBO1 Board_Users_Manual_XMC1200_CPU_Card_R2.pdf?folderId=db3a304334fac4c601350a01037e11d2&fileId=db3a30433da5396c013da5c4fc22008f&ack=t
KITXMC12BOOT001TOBO1
Hersteller: Infineon Technologies
Description: BOOT KIT XMC1200 EVAL BRD
Packaging: Tray
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1200
Platform: Boot Kit
Produkt ist nicht verfügbar
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BC817-16W PIRSS13150-1.pdf?t.download=true&u=5oefqw
BC817-16W
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8955+0.055 EUR
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1EDN9550BXTSA1 Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e
1EDN9550BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDN9550BXTSA1 Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e
1EDN9550BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
21+1.02 EUR
25+0.92 EUR
100+0.81 EUR
250+0.75 EUR
500+0.71 EUR
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EUFDZ0332-CY
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD251B1W0201E6327XTSA1 Infineon-ESD251-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb942cee55496
ESD251B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 30pF @ 1GHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.6V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
15000+0.067 EUR
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