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S25FS128SDSNFM103 S25FS128SDSNFM103 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FS128SAGBHM203 S25FS128SAGBHM203 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FS128SDSBHM203 S25FS128SDSBHM203 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S25FS128SDSNFM100 S25FS128SDSNFM100 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IRAM136-3063B IRAM136-3063B Infineon Technologies IRAM136-3063B.pdf Description: IC HYBRID PWR 30A 600V RES SIP3
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
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IRAM136-3063B2 IRAM136-3063B2 Infineon Technologies IRAM136-3063B.pdf Description: IC MOD PWR HYBRID 600V 30A
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
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IRAM136-3063B2 IRAM136-3063B2 Infineon Technologies IRAM136-3063B.pdf Description: IC MOD PWR HYBRID 600V 30A
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
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CY15B108QN-20LPXI CY15B108QN-20LPXI Infineon Technologies CY15B108QN_CY15V108QN_RevB_5-25-22.pdf Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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CY15B108QN20BFXITXUMA1 Infineon Technologies Description: FRAM
Memory Organization: 1M x 8
Access Time: 20 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Packaging: Tape & Reel (TR)
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CY15B108QN20BFXIXQLA1 Infineon Technologies Description: FRAM
Package / Case: 8-UFLGA
Packaging: Tray
Memory Organization: 1M x 8
Access Time: 20 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
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CY15B108QN-40BFXIT Infineon Technologies Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_LP_Ferroelectric_RAM_F-RAM_Serial_SPI_1024K_8_40_MHz_industrial-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4 Description: IC FRAM 8MBIT SPI 8UFLGA
Memory Organization: 1M x 8
Access Time: 9 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Packaging: Tape & Reel (TR)
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CY15B108QN-40BFXI Infineon Technologies Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_LP_Ferroelectric_RAM_F-RAM_Serial_SPI_1024K_8_40_MHz_industrial-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4 Description: IC FRAM 8MBIT SPI 8UFLGA
Memory Organization: 1M x 8
Access Time: 9 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Packaging: Tray
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CY15B108QN-50BKXIT Infineon Technologies Description: FRAM
Memory Organization: 1M x 8
Access Time: 8 ns
Memory Interface: SPI
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FRAM
Clock Frequency: 50 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
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CY15B108QN-50BKXQT Infineon Technologies Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_TM_LP_Ferroelectric_RAM_F-RAM_Serial_SPI_1024K_X_8_50_MHz_extended_industrial-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401834004f16902ce Description: FRAM
Memory Organization: 1M x 8
Access Time: 8 ns
Memory Interface: SPI
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FRAM
Clock Frequency: 50 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
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CG7600AA Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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AUIR3320STRL AUIR3320STRL Infineon Technologies auir3320s.pdf?fileId=5546d462533600a4015355a867d01356 Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), Variant
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 45A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3320S AUIR3320S Infineon Technologies auir3320s.pdf?fileId=5546d462533600a4015355a867d01356 Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), Variant
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 45A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR33402STRL AUIR33402STRL Infineon Technologies auir33402s.pdf?fileId=5546d462533600a4015355a88074135c Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK (7-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
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S6J323CLUPSC20000 S6J323CLUPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
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S6J325CLUPSC20000 S6J325CLUPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
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S6J327CLUPSC20000 S6J327CLUPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
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S6J329CLUPSC20000 S6J329CLUPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
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IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 Infineon Technologies Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
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10+2.32 EUR
15+1.46 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.63 EUR
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CY7C1041GE30-10ZSXI CY7C1041GE30-10ZSXI Infineon Technologies Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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2+15.12 EUR
10+13.42 EUR
25+12.79 EUR
40+12.48 EUR
135+11.72 EUR
270+11.3 EUR
540+10.91 EUR
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IDWD50E65E7XKSA1 IDWD50E65E7XKSA1 Infineon Technologies Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0 Description: DIODE STD 650V 92A PGTO247-22
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 94 ns
Technology: Standard
Current - Average Rectified (Io): 92A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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3+7.14 EUR
30+3.89 EUR
120+3.18 EUR
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IDWD60E65E7XKSA1 Infineon Technologies Infineon-IDWD60E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59f4e358f3 Description: DIODE GEN PURP 650V 100A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 99 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 60 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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IDWD75E65E7XKSA1 Infineon Technologies Infineon-IDWD75E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a002e58f6 Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-2-2
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IDWD100E65E7XKSA1 IDWD100E65E7XKSA1 Infineon Technologies Infineon-IDWD100E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a0ceb58f9 Description: DIODE STD 650V 150A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 98 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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IDWD120E65E7XKSA1 Infineon Technologies Infineon-IDWD120E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a171a58fc Description: DIODE GEN PURP 650V 150A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 98 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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IDWD150E65E7XKSA1 IDWD150E65E7XKSA1 Infineon Technologies Infineon-IDWD150E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a23bb58ff Description: DIODE STD 650V 200A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 97 ns
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 150 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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CY7C1412AV18-250BZC CY7C1412AV18-250BZC Infineon Technologies CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1412AV18-250BZXC CY7C1412AV18-250BZXC Infineon Technologies CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY7C1512AV18-250BZXC CY7C1512AV18-250BZXC Infineon Technologies CY7C15%2812%2C14%29AV18_8.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLS850A4TEV50ATMA1 TLS850A4TEV50ATMA1 Infineon Technologies Infineon-TLS850A4TEV50-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701886d359f2c528d Description: IC REG LINEAR 5V PG-TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.95V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 210 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS850A4TEV50ATMA1 TLS850A4TEV50ATMA1 Infineon Technologies Infineon-TLS850A4TEV50-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701886d359f2c528d Description: IC REG LINEAR 5V PG-TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.95V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 210 µA
Qualification: AEC-Q100
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10+2.28 EUR
13+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.15 EUR
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TLS850F3TUV33ATMA1 TLS850F3TUV33ATMA1 Infineon Technologies Infineon-TLS850F3TUV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189daf4a4c23c0c Description: IC REG LINEAR OPTIREG
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
PSRR: 64dB (100Hz)
Voltage Dropout (Max): 0.78V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 55 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS850F3TUV33ATMA1 TLS850F3TUV33ATMA1 Infineon Technologies Infineon-TLS850F3TUV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189daf4a4c23c0c Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
PSRR: 64dB (100Hz)
Voltage Dropout (Max): 0.78V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 55 µA
Qualification: AEC-Q100
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7+3.08 EUR
10+2.26 EUR
25+2.06 EUR
100+1.82 EUR
250+1.71 EUR
500+1.65 EUR
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IRGP4086PBF IRGP4086PBF Infineon Technologies IRGP4086PBF.pdf Description: IGBT TRENCH 300V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 160 W
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IRMCF341TY IRMCF341TY Infineon Technologies infineon-irmcf341-datasheet-en.pdf?fileId=5546d462533600a4015356726d8c2742 Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
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CY8C4124LQI-S432T CY8C4124LQI-S432T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Supplier Device Package: 32-QFN (5x5)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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DT61N12KOFHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE VDRM 1200V 120A
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 76 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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CY8C24533-24PVXIT CY8C24533-24PVXIT Infineon Technologies Infineon-CY8C24533_PSOC_PROGRAMMABLE_SYSTEM-ON-CHIP_Datasheet-AdditionalTechnicalInformation-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed24ec84f14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D - 14bit; D/A - 8bit
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 26
DigiKey Programmable: Not Verified
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CY7C09289V-12AXC CY7C09289V-12AXC Infineon Technologies Description: IC SRAM 1MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 50 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF166LPMC1-G-JNE2 CY9BF166LPMC1-G-JNE2 Infineon Technologies Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28 Description: IC MCU 32BIT 544KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 48
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 15x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF166LPMC-G-JNE2 CY9BF166LPMC-G-JNE2 Infineon Technologies Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28 Description: IC MCU 32BIT 544KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 48
Supplier Device Package: 64-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 15x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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S29GL01GT12TFN013 S29GL01GT12TFN013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
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S29GL01GT12TFN023 S29GL01GT12TFN023 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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28310552 A Infineon Technologies Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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28329184C Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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28382564A Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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28382564B Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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28333513C Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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DT61N16KOFKHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE VDRM 1200V 120A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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IQD005N04NM6ATMA1 IQD005N04NM6ATMA1 Infineon Technologies Infineon-IQD005N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45c39aa3034d Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-8-9
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQD005N04NM6ATMA1 IQD005N04NM6ATMA1 Infineon Technologies Infineon-IQD005N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45c39aa3034d Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IRFH5007TRPBF IRFH5007TRPBF Infineon Technologies irfh5007pbf.pdf?fileId=5546d462533600a40153561aad861e98 Description: MOSFET N-CH 75V 17A/100A 8PQFN
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Produkt ist nicht verfügbar
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IRFH5007TRPBF IRFH5007TRPBF Infineon Technologies irfh5007pbf.pdf?fileId=5546d462533600a40153561aad861e98 Description: MOSFET N-CH 75V 17A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRF5805TRPBF IRF5805TRPBF Infineon Technologies irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba Description: MOSFET P-CH 30V 3.8A MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF5805TRPBF IRF5805TRPBF Infineon Technologies irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba Description: MOSFET P-CH 30V 3.8A MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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IRFHM8326TRPBFXTMA1 IRFHM8326TRPBFXTMA1 Infineon Technologies irfhm8326pbf.pdf?fileId=5546d462533600a40153562346891f4b Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.1x3.1)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
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S25FS128SDSNFM103 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758
S25FS128SDSNFM103
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FS128SAGBHM203 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SAGBHM203
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FS128SDSBHM203 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SDSBHM203
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FS128SDSNFM100 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758
S25FS128SDSNFM100
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRAM136-3063B IRAM136-3063B.pdf
IRAM136-3063B
Hersteller: Infineon Technologies
Description: IC HYBRID PWR 30A 600V RES SIP3
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
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IRAM136-3063B2 IRAM136-3063B.pdf
IRAM136-3063B2
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 30A
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
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IRAM136-3063B2 IRAM136-3063B.pdf
IRAM136-3063B2
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 30A
Packaging: Tube
Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
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CY15B108QN-20LPXI CY15B108QN_CY15V108QN_RevB_5-25-22.pdf
CY15B108QN-20LPXI
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15B108QN20BFXITXUMA1
Hersteller: Infineon Technologies
Description: FRAM
Memory Organization: 1M x 8
Access Time: 20 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY15B108QN20BFXIXQLA1
Hersteller: Infineon Technologies
Description: FRAM
Package / Case: 8-UFLGA
Packaging: Tray
Memory Organization: 1M x 8
Access Time: 20 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CY15B108QN-40BFXIT Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_LP_Ferroelectric_RAM_F-RAM_Serial_SPI_1024K_8_40_MHz_industrial-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 8UFLGA
Memory Organization: 1M x 8
Access Time: 9 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY15B108QN-40BFXI Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_LP_Ferroelectric_RAM_F-RAM_Serial_SPI_1024K_8_40_MHz_industrial-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7134b6ff4
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 8UFLGA
Memory Organization: 1M x 8
Access Time: 9 ns
Memory Interface: SPI
Supplier Device Package: 8-UFLGA (3.28x3.23)
Memory Format: FRAM
Clock Frequency: 40 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UFLGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY15B108QN-50BKXIT
Hersteller: Infineon Technologies
Description: FRAM
Memory Organization: 1M x 8
Access Time: 8 ns
Memory Interface: SPI
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FRAM
Clock Frequency: 50 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY15B108QN-50BKXQT Infineon-CY15B108QN_CY15V108QN_8Mb_EXCELON_TM_LP_Ferroelectric_RAM_F-RAM_Serial_SPI_1024K_X_8_50_MHz_extended_industrial-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401834004f16902ce
Hersteller: Infineon Technologies
Description: FRAM
Memory Organization: 1M x 8
Access Time: 8 ns
Memory Interface: SPI
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FRAM
Clock Frequency: 50 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CG7600AA download
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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1+22.6 EUR
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AUIR3320STRL auir3320s.pdf?fileId=5546d462533600a4015355a867d01356
AUIR3320STRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), Variant
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 45A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR3320S auir3320s.pdf?fileId=5546d462533600a4015355a867d01356
AUIR3320S
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), Variant
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.3mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 45A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIR33402STRL auir33402s.pdf?fileId=5546d462533600a4015355a88074135c
AUIR33402STRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 33A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK (7-Lead)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Grade: Automotive
Qualification: AEC-Q100
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S6J323CLUPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J323CLUPSC20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
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S6J325CLUPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J325CLUPSC20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
Produkt ist nicht verfügbar
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S6J327CLUPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J327CLUPSC20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
Produkt ist nicht verfügbar
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S6J329CLUPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J329CLUPSC20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
Produkt ist nicht verfügbar
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IAUZ30N08S5N186ATMA1 Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214
IAUZ30N08S5N186ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2739 Stücke:
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10+2.32 EUR
15+1.46 EUR
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500+0.75 EUR
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CY7C1041GE30-10ZSXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
CY7C1041GE30-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 639 Stücke:
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2+15.12 EUR
10+13.42 EUR
25+12.79 EUR
40+12.48 EUR
135+11.72 EUR
270+11.3 EUR
540+10.91 EUR
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IDWD50E65E7XKSA1 Infineon-IDWD50E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59e94e58f0
IDWD50E65E7XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 650V 92A PGTO247-22
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 94 ns
Technology: Standard
Current - Average Rectified (Io): 92A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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3+7.14 EUR
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IDWD60E65E7XKSA1 Infineon-IDWD60E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a59f4e358f3
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 650V 100A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 99 ns
Technology: Standard
Current - Average Rectified (Io): 100A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 60 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 189 Stücke:
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IDWD75E65E7XKSA1 Infineon-IDWD75E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a002e58f6
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-2-2
auf Bestellung 210 Stücke:
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4+6.51 EUR
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IDWD100E65E7XKSA1 Infineon-IDWD100E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a0ceb58f9
IDWD100E65E7XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 650V 150A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 98 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 35 Stücke:
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3+7.85 EUR
30+4.34 EUR
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IDWD120E65E7XKSA1 Infineon-IDWD120E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a171a58fc
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 650V 150A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 98 ns
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 240 Stücke:
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2+11.06 EUR
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IDWD150E65E7XKSA1 Infineon-IDWD150E65E7-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8b6555fe018c3a5a23bb58ff
IDWD150E65E7XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 650V 200A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 97 ns
Technology: Standard
Current - Average Rectified (Io): 200A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 150 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 256 Stücke:
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2+10.86 EUR
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CY7C1412AV18-250BZC CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf
CY7C1412AV18-250BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1412AV18-250BZXC CY7C1425AV18%2C%20CY7C141%280%2C2%2C4%29AV18_8.pdf
CY7C1412AV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1512AV18-250BZXC CY7C15%2812%2C14%29AV18_8.pdf
CY7C1512AV18-250BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLS850A4TEV50ATMA1 Infineon-TLS850A4TEV50-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701886d359f2c528d
TLS850A4TEV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V PG-TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.95V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 210 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS850A4TEV50ATMA1 Infineon-TLS850A4TEV50-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8823155701886d359f2c528d
TLS850A4TEV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V PG-TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.95V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 210 µA
Qualification: AEC-Q100
auf Bestellung 2214 Stücke:
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10+2.28 EUR
13+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.15 EUR
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TLS850F3TUV33ATMA1 Infineon-TLS850F3TUV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189daf4a4c23c0c
TLS850F3TUV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR OPTIREG
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
PSRR: 64dB (100Hz)
Voltage Dropout (Max): 0.78V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 55 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS850F3TUV33ATMA1 Infineon-TLS850F3TUV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189daf4a4c23c0c
TLS850F3TUV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 43 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
PSRR: 64dB (100Hz)
Voltage Dropout (Max): 0.78V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 55 µA
Qualification: AEC-Q100
auf Bestellung 566 Stücke:
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7+3.08 EUR
10+2.26 EUR
25+2.06 EUR
100+1.82 EUR
250+1.71 EUR
500+1.65 EUR
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IRGP4086PBF IRGP4086PBF.pdf
IRGP4086PBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 300V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 36ns/112ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 160 W
Produkt ist nicht verfügbar
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IRMCF341TY infineon-irmcf341-datasheet-en.pdf?fileId=5546d462533600a4015356726d8c2742
IRMCF341TY
Hersteller: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
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CY8C4124LQI-S432T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4124LQI-S432T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 27
Supplier Device Package: 32-QFN (5x5)
RAM Size: 4K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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DT61N12KOFHPSA1 TT61N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1200V 120A
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 76 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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CY8C24533-24PVXIT Infineon-CY8C24533_PSOC_PROGRAMMABLE_SYSTEM-ON-CHIP_Datasheet-AdditionalTechnicalInformation-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed24ec84f14&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C24533-24PVXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D - 14bit; D/A - 8bit
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C09289V-12AXC
CY7C09289V-12AXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 50 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x14)
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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CY9BF166LPMC1-G-JNE2 Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28
CY9BF166LPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 48
Supplier Device Package: 64-LQFP (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 15x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF166LPMC-G-JNE2 Infineon-MB9B160L_Series_32-Bit_ARM_Cortex_-M4F_FM4_Microcontroller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c81fb7ad20182159c3fb45f28
CY9BF166LPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 48
Supplier Device Package: 64-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 15x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL01GT12TFN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12TFN013
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S29GL01GT12TFN023 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12TFN023
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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28310552 A
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
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28329184C
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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28382564A
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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28382564B
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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28333513C
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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DT61N16KOFKHPSA1 TT61N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE VDRM 1200V 120A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IQD005N04NM6ATMA1 Infineon-IQD005N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45c39aa3034d
IQD005N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-8-9
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IQD005N04NM6ATMA1 Infineon-IQD005N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45c39aa3034d
IQD005N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IRFH5007TRPBF irfh5007pbf.pdf?fileId=5546d462533600a40153561aad861e98
IRFH5007TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 17A/100A 8PQFN
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
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IRFH5007TRPBF irfh5007pbf.pdf?fileId=5546d462533600a40153561aad861e98
IRFH5007TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 17A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRF5805TRPBF irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba
IRF5805TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.8A MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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IRF5805TRPBF irf5805pbf.pdf?fileId=5546d462533600a4015355e3f3be19ba
IRF5805TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.8A MICRO6
Input Capacitance (Ciss) (Max) @ Vds: 511 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Micro6™(TSOP-6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 98mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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IRFHM8326TRPBFXTMA1 irfhm8326pbf.pdf?fileId=5546d462533600a40153562346891f4b
IRFHM8326TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (3.1x3.1)
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.93 EUR
18+1.21 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
2000+0.5 EUR
Mindestbestellmenge: 11 Stücke
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