Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149708) > Seite 661 nach 2496
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CY7C68016A-56LTXCT | Infineon Technologies |
Description: IC MCU USB PHERIPH FX2LP 56VQFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, USB, USART RAM Size: 16K x 8 Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Controller Series: CY7C680xx Program Memory Type: ROMless Applications: USB Microcontroller Core Processor: 8051 Supplier Device Package: 56-QFN (8x8) Number of I/O: 26 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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SPP80N04S2L-03 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 25 V |
auf Bestellung 2920 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFSL7537PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 173A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRMCF188TY | Infineon Technologies |
Description: IC MOTOR DRIVER 3V-3.6V 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Interface: I2C, RS-232, SPI Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Pre-Driver - Half Bridge (3) Voltage - Supply: 3V ~ 3.6V Applications: General Purpose Technology: IGBT Supplier Device Package: 64-LQFP (12x12) Motor Type - AC, DC: AC, Induction, Synchronous |
Produkt ist nicht verfügbar |
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CYUSB2304-68LTXIT | Infineon Technologies |
Description: IC USB 2.0 HUB 4-PORT 68QFNPackaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 2.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (8x8) Number of I/O: 10 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYUSB2304-68LTXIT | Infineon Technologies |
Description: IC USB 2.0 HUB 4-PORT 68QFNPackaging: Cut Tape (CT) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 2.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (8x8) Number of I/O: 10 DigiKey Programmable: Not Verified |
auf Bestellung 827 Stücke: Lieferzeit 10-14 Tag (e) |
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| S80KS2564GACHA043 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 49FBGAPackaging: Tape & Reel (TR) Package / Case: 49-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 49-FBGA (8x8) Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 16M x 16 |
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| S80KS2564GACHA040 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 49FBGAPackaging: Tray Package / Case: 49-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 49-FBGA (8x8) Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 16M x 16 |
Produkt ist nicht verfügbar |
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| S80KS2564GACHB040 | Infineon Technologies |
Description: IC PSRAM 256MBIT HYPERBUS 49FBGAPackaging: Tray Package / Case: 49-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 200 MHz Memory Format: PSRAM Supplier Device Package: 49-FBGA (8x8) Write Cycle Time - Word, Page: 35ns Memory Interface: HyperBus Access Time: 35 ns Memory Organization: 16M x 16 |
Produkt ist nicht verfügbar |
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IRS2461SXUMA1 | Infineon Technologies |
Description: AUDIO ICPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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CY7C1041G-10ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1264 Stücke: Lieferzeit 10-14 Tag (e) |
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CY62177EV30LL-55ZXI | Infineon Technologies |
Description: IC SRAM 32MBIT PARALLEL 48TSOP IPackaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.7V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 4M x 8, 2M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 232 Stücke: Lieferzeit 10-14 Tag (e) |
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CY62148G-45ZSXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Tape & Reel (TR) Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY62148G-45ZSXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 32TSOP IIPackaging: Cut Tape (CT) Package / Case: 32-SOIC (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 512K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9BF124MPMC-GNE2 | Infineon Technologies |
Description: IC MCU 32BIT 288KB FLASH 80LQFPPackaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 288KB (288K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 26x12b SAR; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 60 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY9BF122MPMC-GNE2 | Infineon Technologies |
Description: IC MCU 32BIT 160KB FLASH 80LQFPPackaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 160KB (160K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 26x12b SAR; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 60 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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S25HL01GTDPMHA010 | Infineon Technologies |
Description: IC FLASH 1GBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1919 Stücke: Lieferzeit 10-14 Tag (e) |
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S25HL01GTFAMHA010 | Infineon Technologies |
Description: IC FLASH 1GBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2303 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2026TSV1.1 | Infineon Technologies |
Description: ISDN POWER CONTROLLER Packaging: Tube |
auf Bestellung 602 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2026T-PV1.1 | Infineon Technologies |
Description: ISDN HIGH VOLTAGE POWER CONTROLL Packaging: Bulk |
auf Bestellung 6194 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2026TPV1.1 | Infineon Technologies |
Description: ISDN POWER CONTROLLER Packaging: Bulk |
auf Bestellung 217 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2070NV2.4GICC | Infineon Technologies |
Description: ISDN COMMUNICATIONS CONTROLLERPackaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: ISDN Interface: ISDN, Serial Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 8mA Supplier Device Package: PG-LCC-28-R Number of Circuits: 1 |
auf Bestellung 7350 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2070NV2.4 | Infineon Technologies |
Description: ISDN COMMUNICATIONS CONTROLLERPackaging: Bulk Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: ISDN Interface: ISDN, Serial Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 8mA Supplier Device Package: PG-LCC-28-R Number of Circuits: 1 |
auf Bestellung 1800 Stücke: Lieferzeit 10-14 Tag (e) |
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PEB2026T-SV1.1 | Infineon Technologies |
Description: ISDN POWER CONTROLLER Packaging: Tube |
auf Bestellung 9741 Stücke: Lieferzeit 10-14 Tag (e) |
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CY90387SPMT-GS-373E1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB MROM 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 64KB (64K x 8) RAM Size: 2K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 8x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V Connectivity: CANbus, SCI, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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PVT212PBF | Infineon Technologies |
Description: SSR RELAY SPST-NO 550MA 0-150VPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Termination Style: PC Pin Load Current: 550 mA Supplier Device Package: 6-DIP Voltage - Load: 0 V ~ 150 V On-State Resistance (Max): 750 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: UL |
auf Bestellung 324 Stücke: Lieferzeit 10-14 Tag (e) |
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BGS18MA14E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14Packaging: Bulk Package / Case: 14-UFQFN Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP8T RF Type: LTE, W-CDMA Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 3.4V Insertion Loss: 0.7dB Frequency Range: 100MHz ~ 3.8GHz Test Frequency: 3.6GHz ~ 3.8GHz Isolation: 29dB Supplier Device Package: PG-ATSLP-14-10 IIP3: 65dBm |
auf Bestellung 8813 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS20955STRPBF | Infineon Technologies |
Description: IC LINE DRIVER 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Function: Line Driver Interface: Analog Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 18V Applications: Audio Systems Supplier Device Package: 16-SOIC Number of Channels: 2 |
Produkt ist nicht verfügbar |
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| 8611200977 | Infineon Technologies |
Description: INFINEON Packaging: Bulk |
Produkt ist nicht verfügbar |
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IRG4BC20KD-SPBF | Infineon Technologies |
Description: IGBT 600V 16A 60W D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 54ns/180ns Switching Energy: 340µJ (on), 300µJ (off) Test Condition: 480V, 9A, 50Ohm, 15V Gate Charge: 34 nC Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 32 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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CY7C60323-PVXC | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOPPackaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V Connectivity: I2C, SPI Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Number of I/O: 24 DigiKey Programmable: Not Verified |
auf Bestellung 1473 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C63823-SXC | Infineon Technologies |
Description: IC USB PERIPHERAL CTRLR 24-SOICPackaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Function: Controller Interface: GPIO, SPI Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4V ~ 5.5V Current - Supply: 40mA Protocol: USB Standards: USB 2.0 Supplier Device Package: 24-SOIC DigiKey Programmable: Not Verified |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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FP06R12W1T4B3BOMA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 0 94WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 94 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 600 pF @ 25 V |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4PSC71UDPBF | Infineon Technologies |
Description: IGBT 600V 85A SUPER-247Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 82 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Supplier Device Package: SUPER-247™ (TO-274AA) Td (on/off) @ 25°C: 90ns/245ns Switching Energy: 3.26mJ (on), 2.27mJ (off) Test Condition: 480V, 60A, 5Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W |
Produkt ist nicht verfügbar |
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IRGS4062DPBF | Infineon Technologies |
Description: IGBT TRENCH 600V 48A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: D2PAK IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
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F435MR07W1D7S8B11ABPSA1 | Infineon Technologies |
Description: MOSFET 4N-CH 650V 35A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 35A Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V Vgs(th) (Max) @ Id: 4.45V @ 1.74mA Supplier Device Package: Module |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2113PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-DIP Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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XMC1302T028X0200ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 28TSSOPPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Number of I/O: 26 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC1302T028X0200ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 200KB FLASH 28TSSOPPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 200KB (200K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Number of I/O: 26 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC1302T028X0064ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 28TSSOPPackaging: Tape & Reel (TR) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Number of I/O: 26 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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XMC1302T028X0064ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 28TSSOPPackaging: Cut Tape (CT) Package / Case: 28-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 14x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, IrDA, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-28-16 Number of I/O: 26 DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFB23N15DPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 23A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFS23N15DTRLP | Infineon Technologies |
Description: MOSFET N-CH 150V 23A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFS23N15DTRLP | Infineon Technologies |
Description: MOSFET N-CH 150V 23A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2EDN7523GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8WSONPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-WSON-8-1 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2EDN8524GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8WSONPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-WSON-8-1 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2EDN8524GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8WSONPackaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-WSON-8-1 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
auf Bestellung 1235 Stücke: Lieferzeit 10-14 Tag (e) |
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EVAL2500WPFCGANATOBO1 | Infineon Technologies |
Description: 2500W FULL BRIDGE TOTEMPackaging: Bulk Function: Gate Driver Type: Power Management Contents: Board(s) Utilized IC / Part: 2EDN7524R Supplied Contents: Board(s) Primary Attributes: 2-Channel (Dual) |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2EDN7434BXTSA1 | Infineon Technologies |
Description: DRIVER IC PG-SOT23-6 Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2EDN7434BXTSA1 | Infineon Technologies |
Description: DRIVER IC PG-SOT23-6 Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AUIRFB3806 | Infineon Technologies |
Description: MOSFET N-CH 60V 43A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFB42N20DPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 44A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V Power Dissipation (Max): 2.4W (Ta), 330W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFB23N20DPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 24A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSM100GB60DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 600V 130A 445W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 445 W Current - Collector Cutoff (Max): 500 µA |
auf Bestellung 1446 Stücke: Lieferzeit 10-14 Tag (e) |
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BSM100GB60DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 600V 130A 445W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 445 W Current - Collector Cutoff (Max): 500 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BSM100GB170DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 200A 960W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 960 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 7 nF @ 25 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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D1721NH90TAOSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2160A D10026K-1Packaging: Tray Package / Case: DO-200, Variant Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 2160A Supplier Device Package: BG-D10026K-1 Operating Temperature - Junction: 0°C ~ 140°C Current - Reverse Leakage @ Vr: 150 mA @ 9000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DD340N18SHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 1800V 330A BGPB50SBPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 330A Supplier Device Package: BG-PB50SB-1 Operating Temperature - Junction: -40°C ~ 135°C Voltage - DC Reverse (Vr) (Max): 1800 V Current - Reverse Leakage @ Vr: 1 mA @ 1800 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4BC30WPBF | Infineon Technologies |
Description: IGBT 600V 23A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 25ns/99ns Switching Energy: 130µJ (on), 130µJ (off) Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 51 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IAUC120N06S5L011ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tj) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CY7C68016A-56LTXCT |
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Hersteller: Infineon Technologies
Description: IC MCU USB PHERIPH FX2LP 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU USB PHERIPH FX2LP 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SPP80N04S2L-03 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 25 V
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 25 V
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 173+ | 2.63 EUR |
| IRFSL7537PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 173A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
Description: MOSFET N-CH 60V 173A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.95 EUR |
| 10+ | 4.59 EUR |
| 100+ | 3.25 EUR |
| 500+ | 2.67 EUR |
| 1000+ | 2.51 EUR |
| IRMCF188TY |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (12x12)
Motor Type - AC, DC: AC, Induction, Synchronous
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (12x12)
Motor Type - AC, DC: AC, Induction, Synchronous
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYUSB2304-68LTXIT |
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Hersteller: Infineon Technologies
Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYUSB2304-68LTXIT |
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Hersteller: Infineon Technologies
Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.15 EUR |
| 10+ | 6.23 EUR |
| 25+ | 5.75 EUR |
| 100+ | 5.22 EUR |
| 250+ | 4.97 EUR |
| 500+ | 4.81 EUR |
| S80KS2564GACHA043 |
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Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S80KS2564GACHA040 |
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Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S80KS2564GACHB040 |
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Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1041G-10ZSXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1264 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.55 EUR |
| 10+ | 11.14 EUR |
| 25+ | 10.62 EUR |
| 40+ | 10.36 EUR |
| 135+ | 9.73 EUR |
| 270+ | 9.38 EUR |
| 540+ | 9.05 EUR |
| 945+ | 8.79 EUR |
| CY62177EV30LL-55ZXI |
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Hersteller: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 97.73 EUR |
| 10+ | 90.22 EUR |
| 25+ | 87.27 EUR |
| 96+ | 83.05 EUR |
| CY62148G-45ZSXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 8.72 EUR |
| CY62148G-45ZSXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.16 EUR |
| 10+ | 11.19 EUR |
| 25+ | 10.96 EUR |
| 50+ | 10.92 EUR |
| 100+ | 9.8 EUR |
| 250+ | 9.5 EUR |
| 500+ | 9.03 EUR |
| CY9BF124MPMC-GNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 60
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 288KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 60
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY9BF122MPMC-GNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 60
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 60
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25HL01GTDPMHA010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.13 EUR |
| 10+ | 16.82 EUR |
| 25+ | 16.29 EUR |
| 50+ | 15.9 EUR |
| 240+ | 15.02 EUR |
| 480+ | 14.68 EUR |
| S25HL01GTFAMHA010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2303 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.01 EUR |
| 10+ | 17.62 EUR |
| 25+ | 17.07 EUR |
| 50+ | 16.65 EUR |
| 240+ | 15.73 EUR |
| 480+ | 15.41 EUR |
| PEB2026TSV1.1 |
auf Bestellung 602 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 7.2 EUR |
| PEB2026T-PV1.1 |
auf Bestellung 6194 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 8.95 EUR |
| PEB2026TPV1.1 |
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 8.63 EUR |
| PEB2070NV2.4GICC |
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Hersteller: Infineon Technologies
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
auf Bestellung 7350 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 10.87 EUR |
| PEB2070NV2.4 |
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Hersteller: Infineon Technologies
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 10.87 EUR |
| PEB2026T-SV1.1 |
auf Bestellung 9741 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 40+ | 12.62 EUR |
| CY90387SPMT-GS-373E1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PVT212PBF |
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Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 550 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 550 mA
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
auf Bestellung 324 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 31.49 EUR |
| 10+ | 28.05 EUR |
| 25+ | 26.78 EUR |
| 50+ | 25.86 EUR |
| 100+ | 24.97 EUR |
| 250+ | 23.85 EUR |
| BGS18MA14E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.6GHz ~ 3.8GHz
Isolation: 29dB
Supplier Device Package: PG-ATSLP-14-10
IIP3: 65dBm
Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.6GHz ~ 3.8GHz
Isolation: 29dB
Supplier Device Package: PG-ATSLP-14-10
IIP3: 65dBm
auf Bestellung 8813 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 664+ | 0.73 EUR |
| IRS20955STRPBF |
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Hersteller: Infineon Technologies
Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Number of Channels: 2
Description: IC LINE DRIVER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRG4BC20KD-SPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 16A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 54ns/180ns
Switching Energy: 340µJ (on), 300µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 60 W
Description: IGBT 600V 16A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 54ns/180ns
Switching Energy: 340µJ (on), 300µJ (off)
Test Condition: 480V, 9A, 50Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 60 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C60323-PVXC |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Connectivity: I2C, SPI
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 1473 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.07 EUR |
| 10+ | 3.8 EUR |
| 47+ | 3.31 EUR |
| 141+ | 3.07 EUR |
| 282+ | 2.95 EUR |
| 517+ | 2.87 EUR |
| 1034+ | 2.79 EUR |
| CY7C63823-SXC |
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Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 24-SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-SOIC
DigiKey Programmable: Not Verified
Description: IC USB PERIPHERAL CTRLR 24-SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-SOIC
DigiKey Programmable: Not Verified
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 6.14 EUR |
| FP06R12W1T4B3BOMA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 0 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Description: IGBT MODULE 1200V 0 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 62.62 EUR |
| 24+ | 55.8 EUR |
| IRG4PSC71UDPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 85A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
Description: IGBT 600V 85A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 82 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 90ns/245ns
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Test Condition: 480V, 60A, 5Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGS4062DPBF |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Description: IGBT TRENCH 600V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F435MR07W1D7S8B11ABPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 650V 35A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Supplier Device Package: Module
Description: MOSFET 4N-CH 650V 35A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 35A
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Supplier Device Package: Module
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 96.18 EUR |
| 24+ | 86.31 EUR |
| IRS2113PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| XMC1302T028X0200ABXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.35 EUR |
| XMC1302T028X0200ABXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.45 EUR |
| 10+ | 3.34 EUR |
| 25+ | 3.06 EUR |
| 100+ | 2.75 EUR |
| 250+ | 2.6 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.44 EUR |
| XMC1302T028X0064ABXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2 EUR |
| XMC1302T028X0064ABXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.85 EUR |
| 10+ | 2.87 EUR |
| 25+ | 2.62 EUR |
| 100+ | 2.35 EUR |
| 250+ | 2.22 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 2.08 EUR |
| IRFB23N15DPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS23N15DTRLP |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS23N15DTRLP |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2EDN7523GXTMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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| 2EDN8524GXTMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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| 2EDN8524GXTMA1 |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 18+ | 0.99 EUR |
| 25+ | 0.89 EUR |
| 100+ | 0.78 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.67 EUR |
| EVAL2500WPFCGANATOBO1 |
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Hersteller: Infineon Technologies
Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 854.85 EUR |
| 2EDN7434BXTSA1 |
Hersteller: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| 2EDN7434BXTSA1 |
Hersteller: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| AUIRFB3806 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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| IRFB42N20DPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Description: MOSFET N-CH 200V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
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| IRFB23N20DPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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| BSM100GB60DLCHOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 445W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
Description: IGBT MOD 600V 130A 445W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 113.26 EUR |
| BSM100GB60DLCHOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 445W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
Description: IGBT MOD 600V 130A 445W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 445 W
Current - Collector Cutoff (Max): 500 µA
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| BSM100GB170DLCHOSA1 |
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 200A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Description: IGBT MOD 1700V 200A 960W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 204.6 EUR |
| D1721NH90TAOSA1 |
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Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Description: DIODE GEN PURP 2160A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Produkt ist nicht verfügbar
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| DD340N18SHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 155.64 EUR |
| IRG4BC30WPBF | ![]() |
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Hersteller: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 25ns/99ns
Switching Energy: 130µJ (on), 130µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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| IAUC120N06S5L011ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Qualification: AEC-Q101
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