Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148871) > Seite 656 nach 2482
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CY2305CSXC-1T | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Clock Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:5 Differential - Input:Output: No/No Supplier Device Package: 8-SOIC PLL: Yes Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
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IKWH100N65EH7XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-32 Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/240ns Switching Energy: 3.58mJ (on), 2.37mJ (off) Test Condition: 400V, 100A, 10Ohm, 15V Gate Charge: 199 nC Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 400 A Power - Max: 427 W |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1312KV18-250BZCT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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CY7C1312KV18-300BZXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Dual Port, Synchronous Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Access Time: 0.45 ns Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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CY7C1312KV18-300BZXCT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II Clock Frequency: 300 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
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TLE4986CXASM47HAMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 3-SIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C Technology: Hall Effect Current - Output (Max): 20mA Supplier Device Package: PG-SSO-3-52 |
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TLE4986CXASM47HAMA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) Package / Case: 3-SIP Module Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 175°C Technology: Hall Effect Current - Output (Max): 20mA Supplier Device Package: PG-SSO-3-52 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4986CXTSM47HAMA1 | Infineon Technologies |
![]() Packaging: Tape & Box (TB) |
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IRSM005-301MH | Infineon Technologies |
![]() Packaging: Tray Features: Bootstrap Circuit Package / Case: 27-PowerVQFN Mounting Type: Surface Mount Interface: Logic Operating Temperature: 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 10V ~ 20V Rds On (Typ): 16mOhm Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose Current - Output / Channel: 30A Technology: Power MOSFET Voltage - Load: 100V (Max) Supplier Device Package: 27-PQFN (7x8) Fault Protection: UVLO Load Type: Inductive, Capacitive |
auf Bestellung 966 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD90N06S405ATMA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2722 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR6215PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
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XMC1202Q024X0016ABXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 16KB (16K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-16-8 Number of I/O: 18 DigiKey Programmable: Not Verified |
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CYW4330GKWBGT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 225-XFBGA, WLCSP Sensitivity: -95dBm Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.3V ~ 4.8V Power - Output: 12dBm Protocol: 802.11a/b/g/n, Bluetooth v4.0 Current - Receiving: 52mA ~ 60mA Data Rate (Max): 72Mbps Current - Transmitting: 300mA ~ 325mA Supplier Device Package: 225-WLCSP (4.89x5.33) GPIO: 7 Modulation: 4DQPSK, 8DPSK, GFSK RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I²S, JTAG, SPI, UART, USB DigiKey Programmable: Not Verified |
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IRG4PC50SPBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 33ns/650ns Switching Energy: 720µJ (on), 8.27mJ (off) Test Condition: 480V, 41A, 5Ohm, 15V Gate Charge: 180 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 200 W |
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IRG4PC50FPBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 31ns/240ns Switching Energy: 370µJ (on), 2.1mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
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irg4pc50uPBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 32ns/170ns Switching Energy: 120µJ (on), 540µJ (off) Test Condition: 480V, 27A, 5Ohm, 15V Gate Charge: 180 nC Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 200 W |
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IRG4PC50FDPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 55ns/240ns Switching Energy: 1.5mJ (on), 2.4mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
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IRG4PC50FD-EPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 55ns/240ns Switching Energy: 1.5mJ (on), 2.4mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
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IRG4PC50F-EPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 31ns/240ns Switching Energy: 370µJ (on), 2.1mJ (off) Test Condition: 480V, 39A, 5Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 280 A Power - Max: 200 W |
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IRG4PC50SDPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 33ns/650ns Switching Energy: 720µJ (on), 8.27mJ (off) Test Condition: 480V, 41A, 5Ohm, 15V Gate Charge: 180 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 140 A Power - Max: 200 W |
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CYUSB3ACC-002 | Infineon Technologies |
![]() Packaging: Bulk For Use With/Related Products: EZ-USB® FX3™ Accessory Type: Interface Board |
Produkt ist nicht verfügbar |
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MB95F474KPMC1-G-SNE2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 496 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I²C, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 59 DigiKey Programmable: Not Verified |
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MB95F474KPMC2-G-SNE2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 496 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 8x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: I²C, SIO, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (12x12) Number of I/O: 59 DigiKey Programmable: Not Verified |
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FB20R06W1E3B11HOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 94 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
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FS20R06VE3BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 71.5 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V |
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FS20R06VE3B2BOMA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: Module Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 71.5 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 1.14 nF @ 25 V |
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DD230S26KHPSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 261A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2600 V Voltage - Forward (Vf) (Max) @ If: 1.74 V @ 800 A Current - Reverse Leakage @ Vr: 160 mA @ 2600 V |
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CY8C6247FDI-D02T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-XFBGA, WLCSP Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4/M0 Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 80-WLCSP (3.68x3.19) Number of I/O: 62 DigiKey Programmable: Not Verified |
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CY8C6247FDI-D02T | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 80-XFBGA, WLCSP Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4/M0 Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 80-WLCSP (3.68x3.19) Number of I/O: 62 DigiKey Programmable: Not Verified |
auf Bestellung 1913 Stücke: Lieferzeit 10-14 Tag (e) |
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FD200R12KE3HOSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRF4905 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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S29GL128S10DHB023 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL128S10DHB023 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 8M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 4300 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4PF50WPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 29ns/110ns Switching Energy: 190µJ (on), 1.06mJ (off) Test Condition: 720V, 28A, 5Ohm, 15V Gate Charge: 160 nC Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 204 A Power - Max: 200 W |
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SAK-XC824M-1FGIAA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 25.6MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 4x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I²C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-DSO-20-45 Number of I/O: 17 DigiKey Programmable: Not Verified |
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SAF-XC87816FFI5VACFXUMA1 | Infineon Technologies |
![]() Packaging: Bulk DigiKey Programmable: Not Verified |
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XC8662FRIBEFXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 8KB (8K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 19 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XC8664FRABEKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-4 Number of I/O: 19 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XC866L4FRABEKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 86MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: LINbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 19 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XC866L4FRA3VBEKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: LINbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38 Number of I/O: 27 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XC8664FRA5VBELXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: LINbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-4 Number of I/O: 27 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XC866L4FRA3VBELXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 25MHz Program Memory Size: 16KB (16K x 8) RAM Size: 768 x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: LINbus, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 27 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRL3103PBF | Infineon Technologies |
![]() ![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRL3103STRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
RJK5035DPP-E0#T2 | Infineon Technologies |
Description: RJK5035DPPNSINGPOWMOSF501850MOTO Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AUIRFZ48ZS | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY25404ZXI217T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C6316BZI-BLF03 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 116-WFBGA Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 512KB (512K x 8) RAM Size: 160K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 116-BGA (5.2x6.4) Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C6337BZI-BLF13 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 116-WFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 288K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT Supplier Device Package: 116-BGA (5.2x6.4) Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C6246BZI-D04 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 512KB (512K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: ARM® Cortex®-M4/M0 Data Converters: A/D 8x12b SAR; D/A 1x12b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 104 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB65R150CFDATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB65R150CFDAATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R150CFDAATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 195.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1192 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL512S12DHIV10 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 120 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 520 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL256S90DHSS10 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL256S90DHSS40 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 90 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1351G-133AXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KITLGCAPBOM006TOBO1 | Infineon Technologies |
![]() Packaging: Bulk For Use With/Related Products: XMC4400 Accessory Type: Interface Board |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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S25HL01GTDPMHM013 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDD15E60BUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87 ns Technology: Standard Current - Average Rectified (Io): 29.2A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 14802 Stücke: Lieferzeit 10-14 Tag (e) |
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CY2305CSXC-1T |
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Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKWH100N65EH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-32
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 3.58mJ (on), 2.37mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 427 W
Description: IGBT TRENCH FS 650V 140A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-32
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/240ns
Switching Energy: 3.58mJ (on), 2.37mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 427 W
auf Bestellung 83 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.37 EUR |
30+ | 9.65 EUR |
CY7C1312KV18-250BZCT |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1312KV18-300BZXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 0.45 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 0.45 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY7C1312KV18-300BZXCT |
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Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE4986CXASM47HAMA1 |
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Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
Produkt ist nicht verfügbar
Im Einkaufswagen
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TLE4986CXASM47HAMA1 |
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Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Package / Case: 3-SIP Module
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 175°C
Technology: Hall Effect
Current - Output (Max): 20mA
Supplier Device Package: PG-SSO-3-52
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 2.23 EUR |
TLE4986CXTSM47HAMA1 |
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Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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IRSM005-301MH |
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Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 30A 27QFN
Packaging: Tray
Features: Bootstrap Circuit
Package / Case: 27-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 16mOhm
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 100V (Max)
Supplier Device Package: 27-PQFN (7x8)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
Description: IC HALF BRIDGE DRIVER 30A 27QFN
Packaging: Tray
Features: Bootstrap Circuit
Package / Case: 27-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 16mOhm
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 100V (Max)
Supplier Device Package: 27-PQFN (7x8)
Fault Protection: UVLO
Load Type: Inductive, Capacitive
auf Bestellung 966 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.33 EUR |
10+ | 4.00 EUR |
25+ | 3.67 EUR |
80+ | 3.35 EUR |
260+ | 3.12 EUR |
520+ | 3.02 EUR |
IPD90N06S405ATMA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2722 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
359+ | 1.30 EUR |
IRFR6215PBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Description: MOSFET P-CH 150V 13A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 6.6A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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XMC1202Q024X0016ABXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 18
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Number of I/O: 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW4330GKWBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH
Packaging: Tape & Reel (TR)
Package / Case: 225-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 52mA ~ 60mA
Data Rate (Max): 72Mbps
Current - Transmitting: 300mA ~ 325mA
Supplier Device Package: 225-WLCSP (4.89x5.33)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLUETOOTH
Packaging: Tape & Reel (TR)
Package / Case: 225-XFBGA, WLCSP
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 4.8V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 52mA ~ 60mA
Data Rate (Max): 72Mbps
Current - Transmitting: 300mA ~ 325mA
Supplier Device Package: 225-WLCSP (4.89x5.33)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
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IRG4PC50SPBF | ![]() |
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Hersteller: Infineon Technologies
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 33ns/650ns
Switching Energy: 720µJ (on), 8.27mJ (off)
Test Condition: 480V, 41A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 200 W
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 33ns/650ns
Switching Energy: 720µJ (on), 8.27mJ (off)
Test Condition: 480V, 41A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IRG4PC50FPBF | ![]() |
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Hersteller: Infineon Technologies
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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irg4pc50uPBF | ![]() |
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Hersteller: Infineon Technologies
Description: IGBT 600V 55A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 120µJ (on), 540µJ (off)
Test Condition: 480V, 27A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 200 W
Description: IGBT 600V 55A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 32ns/170ns
Switching Energy: 120µJ (on), 540µJ (off)
Test Condition: 480V, 27A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IRG4PC50FDPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IRG4PC50FD-EPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 55ns/240ns
Switching Energy: 1.5mJ (on), 2.4mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IRG4PC50F-EPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 70A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Description: IGBT 600V 70A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 31ns/240ns
Switching Energy: 370µJ (on), 2.1mJ (off)
Test Condition: 480V, 39A, 5Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IRG4PC50SDPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 33ns/650ns
Switching Energy: 720µJ (on), 8.27mJ (off)
Test Condition: 480V, 41A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 200 W
Description: IGBT 600V 70A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 1.36V @ 15V, 41A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 33ns/650ns
Switching Energy: 720µJ (on), 8.27mJ (off)
Test Condition: 480V, 41A, 5Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 200 W
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CYUSB3ACC-002 |
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Hersteller: Infineon Technologies
Description: XILINX FMC TO EZ-USB FX3 BOARD
Packaging: Bulk
For Use With/Related Products: EZ-USB® FX3™
Accessory Type: Interface Board
Description: XILINX FMC TO EZ-USB FX3 BOARD
Packaging: Bulk
For Use With/Related Products: EZ-USB® FX3™
Accessory Type: Interface Board
Produkt ist nicht verfügbar
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MB95F474KPMC1-G-SNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I²C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I²C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 59
DigiKey Programmable: Not Verified
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MB95F474KPMC2-G-SNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I²C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I²C, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FB20R06W1E3B11HOMA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 29A 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT MODULE 600V 29A 94W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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FS20R06VE3BOMA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 600V 25A 71.5W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 71.5 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Description: IGBT MOD 600V 25A 71.5W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 71.5 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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FS20R06VE3B2BOMA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 600V 25A 71.5W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 71.5 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.14 nF @ 25 V
Description: IGBT MOD 600V 25A 71.5W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 71.5 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.14 nF @ 25 V
Produkt ist nicht verfügbar
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DD230S26KHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2600V 261A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 261A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.74 V @ 800 A
Current - Reverse Leakage @ Vr: 160 mA @ 2600 V
Description: DIODE MODULE GP 2600V 261A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 261A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.74 V @ 800 A
Current - Reverse Leakage @ Vr: 160 mA @ 2600 V
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CY8C6247FDI-D02T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 80-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 80-WLCSP (3.68x3.19)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 80WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 80-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 80-WLCSP (3.68x3.19)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C6247FDI-D02T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 80WLCSP
Packaging: Cut Tape (CT)
Package / Case: 80-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 80-WLCSP (3.68x3.19)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 80WLCSP
Packaging: Cut Tape (CT)
Package / Case: 80-XFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 80-WLCSP (3.68x3.19)
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 1913 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.78 EUR |
10+ | 11.50 EUR |
25+ | 10.68 EUR |
100+ | 9.78 EUR |
250+ | 9.35 EUR |
500+ | 9.09 EUR |
1000+ | 8.88 EUR |
FD200R12KE3HOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE 1200V 1050W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 165.39 EUR |
AUIRF4905 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 74A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 55V 74A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 38A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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S29GL128S10DHB023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2200+ | 6.60 EUR |
S29GL128S10DHB023 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
auf Bestellung 4300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.05 EUR |
10+ | 9.82 EUR |
25+ | 9.37 EUR |
50+ | 9.04 EUR |
100+ | 8.72 EUR |
250+ | 8.31 EUR |
500+ | 8.02 EUR |
1000+ | 7.73 EUR |
IRG4PF50WPBF |
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Hersteller: Infineon Technologies
Description: IGBT 900V 51A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 29ns/110ns
Switching Energy: 190µJ (on), 1.06mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W
Description: IGBT 900V 51A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 29ns/110ns
Switching Energy: 190µJ (on), 1.06mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W
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SAK-XC824M-1FGIAA |
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Hersteller: Infineon Technologies
Description: 8051 COMPATIBLE 8-BIT MCU
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 25.6MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-DSO-20-45
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: 8051 COMPATIBLE 8-BIT MCU
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 25.6MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-DSO-20-45
Number of I/O: 17
DigiKey Programmable: Not Verified
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SAF-XC87816FFI5VACFXUMA1 |
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Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC8662FRIBEFXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
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XC8664FRABEKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 19
DigiKey Programmable: Not Verified
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XC866L4FRABEKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
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XC866L4FRA3VBEKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 27
DigiKey Programmable: Not Verified
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XC8664FRA5VBELXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-4
Number of I/O: 27
DigiKey Programmable: Not Verified
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XC866L4FRA3VBELXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 27
DigiKey Programmable: Not Verified
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IRL3103PBF | ![]() |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 64A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 30V 64A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
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IRL3103STRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Description: MOSFET N-CH 30V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
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AUIRFZ48ZS |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 61A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 61A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY25404ZXI217T |
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Hersteller: Infineon Technologies
Description: TSBU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: TSBU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY8C6316BZI-BLF03 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 160K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
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CY8C6337BZI-BLF13 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 116BGA
Packaging: Tray
Package / Case: 116-WFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 116-BGA (5.2x6.4)
Number of I/O: 78
DigiKey Programmable: Not Verified
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CY8C6246BZI-D04 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 124BGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 8x12b SAR; D/A 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
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IPB65R150CFDATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Produkt ist nicht verfügbar
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IPB65R150CFDAATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 3.43 EUR |
IPB65R150CFDAATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 22.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1192 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.04 EUR |
10+ | 5.83 EUR |
100+ | 4.23 EUR |
500+ | 3.43 EUR |
S29GL512S12DHIV10 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 16.76 EUR |
10+ | 15.52 EUR |
25+ | 15.17 EUR |
40+ | 15.09 EUR |
80+ | 13.28 EUR |
260+ | 12.62 EUR |
520+ | 12.50 EUR |
S29GL256S90DHSS10 |
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL256S90DHSS40 |
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY7C1351G-133AXC |
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Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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KITLGCAPBOM006TOBO1 |
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Hersteller: Infineon Technologies
Description: KIT_LGCAP_BOM006
Packaging: Bulk
For Use With/Related Products: XMC4400
Accessory Type: Interface Board
Description: KIT_LGCAP_BOM006
Packaging: Bulk
For Use With/Related Products: XMC4400
Accessory Type: Interface Board
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 71.24 EUR |
S25HL01GTDPMHM013 |
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Hersteller: Infineon Technologies
Description: Nor
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: Nor
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDD15E60BUMA1 |
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Hersteller: Infineon Technologies
Description: DIODE GP 600V 29.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE GP 600V 29.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 14802 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
544+ | 0.97 EUR |