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CY7C1360C-200AJXC CY7C1360C-200AJXC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 256K x 36
Access Time: 3 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 9Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1360C-200AXC CY7C1360C-200AXC Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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FP75R12N3T7B81BPSA1 Infineon Technologies Infineon-FP75R12N3T7-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c80027ecd01809858fce53ae1 Description: LOW POWER ECONO AG-ECONO3B-731
Packaging: Tray
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S25FL512SAGBHID10 S25FL512SAGBHID10 Infineon Technologies 001-98284%20Rev%20U.pdf Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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676+7.69 EUR
1014+7.58 EUR
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S25FL512SAGMFIG11 S25FL512SAGMFIG11 Infineon Technologies 001-98284%20Rev%20U.pdf Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SAGBHID13 S25FL512SAGBHID13 Infineon Technologies 001-98284%20Rev%20U.pdf Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SAGBHID13 S25FL512SAGBHID13 Infineon Technologies 001-98284%20Rev%20U.pdf Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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10+10.5 EUR
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100+9.7 EUR
250+9.39 EUR
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S25FL512SDSMFM010 S25FL512SDSMFM010 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CYW89072BRFB5G CYW89072BRFB5G Infineon Technologies Description: BLUE TOOTH AUTO
Packaging: Tray
Produkt ist nicht verfügbar
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CYW89273CUBGT CYW89273CUBGT Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
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CYW89335L2CUBGT Infineon Technologies Description: SOC WIFI BTE AUTO 145WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CYW89459CUBGT Infineon Technologies Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CYW89342CRFB4GT Infineon Technologies Description: IC RF TXRX+MCU BLE 248FCFBGA
Packaging: Tape & Reel (TR)
Package / Case: 248-BGA, FCBGA
Mounting Type: Surface Mount
Type: TxRx + MCU
Supplier Device Package: 248-FCFBGA (13x13)
RF Family/Standard: Bluetooth, WiFi
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CY62157GE30-45BVXIT Infineon Technologies Infineon-CY62157G_CY62157GE_MoBL_8-Mbit_(512K_16-bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee95538723e Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XE164F96F66LACFXQMA1 XE164F96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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XE167F48F66LACFXQMA1 XE167F48F66LACFXQMA1 Infineon Technologies Infineon-XE167x-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1cf5bc857fc Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
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BSR302NL6327HTSA1 BSR302NL6327HTSA1 Infineon Technologies BSR302N.pdf Description: MOSFET N-CH 30V 3.7A SC59
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SC59-3
Vgs(th) (Max) @ Id: 2V @ 30µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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IM69D130V11XTSA2 Infineon Technologies Description: MICROPHONES_DIFFERENTIAT
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
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IM69D130V11XTSA2 Infineon Technologies Description: MICROPHONES_DIFFERENTIAT
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
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IRG4BC20UDPBF IRG4BC20UDPBF Infineon Technologies IRG4BC20UDPbF.pdf description Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRAMX30TP60A Infineon Technologies IRAMX30TP60A.pdf Description: IC MOD PWR HYBRID 600V 30A MOTOR
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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CY14B101PA-SFXIT CY14B101PA-SFXIT Infineon Technologies Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14B101PA-SFXIT CY14B101PA-SFXIT Infineon Technologies Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY14B101NA-ZS25XI CY14B101NA-ZS25XI Infineon Technologies Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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1+71.6 EUR
10+66.25 EUR
25+64.13 EUR
50+62.53 EUR
135+60.3 EUR
270+58.76 EUR
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CY14V101QS-BK108XI CY14V101QS-BK108XI Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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1+32.19 EUR
10+28.57 EUR
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CY14V101QS-BK108XQ CY14V101QS-BK108XQ Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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80+20.4 EUR
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CY14V101QS-SF108XQ CY14V101QS-SF108XQ Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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1+28.86 EUR
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CY14V101QS-SE108XIT CY14V101QS-SE108XIT Infineon Technologies Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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10+27.95 EUR
25+27.57 EUR
50+27.23 EUR
100+23.86 EUR
250+22.84 EUR
500+22.69 EUR
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IPB720P15LMATMA1 IPB720P15LMATMA1 Infineon Technologies Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
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IPB720P15LMATMA1 IPB720P15LMATMA1 Infineon Technologies Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
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IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
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IPL60R115CFD7AUMA1 IPL60R115CFD7AUMA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
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IRF7807VPBF IRF7807VPBF Infineon Technologies irf7807vpbf.pdf?fileId=5546d462533600a4015356084a061ce2 Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
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T2563N80TOHXPSA1 T2563N80TOHXPSA1 Infineon Technologies DS_T2563N_11_0.pdf?fileId=db3a3043243b5f1701249621aeef1662 Description: SCR MODULE 3600A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Produkt ist nicht verfügbar
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T2563N80TS15XPSA1 Infineon Technologies Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
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T2563N85TS12XOSA1 Infineon Technologies Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8.5 kV
Produkt ist nicht verfügbar
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IR21364SPBF IR21364SPBF Infineon Technologies IR21364%28S%2CJ%29PbF.pdf Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB60R160P6ATMA1 IPB60R160P6ATMA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
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IPB60R160P6ATMA1 IPB60R160P6ATMA1 Infineon Technologies Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
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POWERDRILL2GOTOBO1 POWERDRILL2GOTOBO1 Infineon Technologies Description: CONTROL TRIGGER 2GO
Packaging: Bulk
For Use With/Related Products: 2GO, Shield2Go
Accessory Type: Magnet Holder
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BTF3080EJXUMA1 BTF3080EJXUMA1 Infineon Technologies Infineon-BTF3080EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea921480e83 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 71mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BTF3080EJXUMA1 BTF3080EJXUMA1 Infineon Technologies Infineon-BTF3080EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea921480e83 Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Qualification: AEC-Q100
Grade: Automotive
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 71mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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IR25750LTRPBF IR25750LTRPBF Infineon Technologies ir25750lpbf.pdf?fileId=5546d462533600a4015355ca1d0e16f7 Description: IC CURRENT SENSE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Applications: Current Sensing - MOSFET, IGBT
Current - Supply: 50µA
Supplier Device Package: SOT-23-5
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IRSM808-105MHTR IRSM808-105MHTR Infineon Technologies infineon-irsm808-105mh-ds-en.pdf Description: IC HALF BRIDGE DRIVER 10A 31PQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 580mOhm
Applications: AC Motors
Current - Output / Channel: 10A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
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IRSM808-105MHTR IRSM808-105MHTR Infineon Technologies infineon-irsm808-105mh-ds-en.pdf Description: IC HALF BRIDGE DRIVER 10A 31PQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 580mOhm
Applications: AC Motors
Current - Output / Channel: 10A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
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IPA126N10NM3SXKSA1 IPA126N10NM3SXKSA1 Infineon Technologies Infineon-IPA126N10NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d07a0046e37 Description: MOSFET N-CH 100V 39A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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IAUC26N10S5L245ATMA1 IAUC26N10S5L245ATMA1 Infineon Technologies Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
Qualification: AEC-Q101
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IAUC26N10S5L245ATMA1 IAUC26N10S5L245ATMA1 Infineon Technologies Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
Qualification: AEC-Q101
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IPA126N10N3GXKSA1 IPA126N10N3GXKSA1 Infineon Technologies IPA126N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122601c46c77f03 Description: MOSFET N-CH 100V 35A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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IPI126N10N3 G IPI126N10N3 G Infineon Technologies Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e Description: MOSFET N-CH 100V 58A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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CY7C1061G30-10BVXI CY7C1061G30-10BVXI Infineon Technologies infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10ZSXI CY7C1061G30-10ZSXI Infineon Technologies infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY62167GN-45ZXI CY62167GN-45ZXI Infineon Technologies Infineon-CY62167GN18-55BVXIT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee23ce068b1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10ZXI CY7C1061G30-10ZXI Infineon Technologies infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY62167DV30LL-55BVXIT CY62167DV30LL-55BVXIT Infineon Technologies download Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY62167DV30LL-55BVXIT CY62167DV30LL-55BVXIT Infineon Technologies download Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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XC888LM6FFA5VACKXUMA1 XC888LM6FFA5VACKXUMA1 Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb Description: IC MCU 8BIT 24KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Number of I/O: 48
DigiKey Programmable: Not Verified
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XC888CM8FFI5VACFXUMA1 XC888CM8FFI5VACFXUMA1 Infineon Technologies Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Number of I/O: 48
DigiKey Programmable: Not Verified
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S25HS01GTDPBHI033 S25HS01GTDPBHI033 Infineon Technologies infineon-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: PG-BGA-24-804
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS01GTFABHI033 S25HS01GTFABHI033 Infineon Technologies infineon-512-mb-1-gb-semper-tm-flash-quad-spi-ja-datasheet-ja.pdf Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1360C-200AJXC download
CY7C1360C-200AJXC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 256K x 36
Access Time: 3 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 9Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1360C-200AXC download
CY7C1360C-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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FP75R12N3T7B81BPSA1 Infineon-FP75R12N3T7-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c80027ecd01809858fce53ae1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3B-731
Packaging: Tray
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S25FL512SAGBHID10 001-98284%20Rev%20U.pdf
S25FL512SAGBHID10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3375 Stücke:
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1014+7.58 EUR
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S25FL512SAGMFIG11 001-98284%20Rev%20U.pdf
S25FL512SAGMFIG11
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SAGBHID13 001-98284%20Rev%20U.pdf
S25FL512SAGBHID13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SAGBHID13 001-98284%20Rev%20U.pdf
S25FL512SAGBHID13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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2+11.27 EUR
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S25FL512SDSMFM010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDSMFM010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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2+15.71 EUR
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CYW89072BRFB5G
CYW89072BRFB5G
Hersteller: Infineon Technologies
Description: BLUE TOOTH AUTO
Packaging: Tray
Produkt ist nicht verfügbar
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CYW89273CUBGT
CYW89273CUBGT
Hersteller: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW89335L2CUBGT
Hersteller: Infineon Technologies
Description: SOC WIFI BTE AUTO 145WLCSP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW89459CUBGT
Hersteller: Infineon Technologies
Description: Automotive WiFi/Bluetooth
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW89342CRFB4GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 248FCFBGA
Packaging: Tape & Reel (TR)
Package / Case: 248-BGA, FCBGA
Mounting Type: Surface Mount
Type: TxRx + MCU
Supplier Device Package: 248-FCFBGA (13x13)
RF Family/Standard: Bluetooth, WiFi
Produkt ist nicht verfügbar
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CY62157GE30-45BVXIT Infineon-CY62157G_CY62157GE_MoBL_8-Mbit_(512K_16-bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee95538723e
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XE164F96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F96F66LACFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XE167F48F66LACFXQMA1 Infineon-XE167x-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1cf5bc857fc
XE167F48F66LACFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 118
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSR302NL6327HTSA1 BSR302N.pdf
BSR302NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SC59-3
Vgs(th) (Max) @ Id: 2V @ 30µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 3000 Stücke:
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2025+0.27 EUR
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IM69D130V11XTSA2
Hersteller: Infineon Technologies
Description: MICROPHONES_DIFFERENTIAT
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
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IM69D130V11XTSA2
Hersteller: Infineon Technologies
Description: MICROPHONES_DIFFERENTIAT
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 69dB
Termination: Solder Pads
Direction: Noise Cancelling
Port Location: Bottom
Height (Max): 0.047" (1.20mm)
Current - Supply: 980 µA
Voltage Range: 1.62 V ~ 3.6 V
Produkt ist nicht verfügbar
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IRG4BC20UDPBF description IRG4BC20UDPbF.pdf
IRG4BC20UDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 13A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRAMX30TP60A IRAMX30TP60A.pdf
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 30A MOTOR
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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CY14B101PA-SFXIT Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
CY14B101PA-SFXIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+17.78 EUR
Mindestbestellmenge: 1000 Stücke
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CY14B101PA-SFXIT Infineon-CY14C101PA_CY14B101PA_CY14E101PA_1-Mbit_(128K_x_8)_Serial_(SPI)_nvSRAM_with_Real-Time_Clock-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebfd3223457&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
CY14B101PA-SFXIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 40MHZ 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.24 EUR
10+17.78 EUR
Mindestbestellmenge: 2 Stücke
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CY14B101NA-ZS25XI Infineon-CY14B101LA_CY14B101NA_1-Mbit_(128_K_8_64_K_16)_nvSRAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd6cf32ff4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B101NA-ZS25XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
auf Bestellung 753 Stücke:
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AnzahlPrivatkunde
1+71.6 EUR
10+66.25 EUR
25+64.13 EUR
50+62.53 EUR
135+60.3 EUR
270+58.76 EUR
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CY14V101QS-BK108XI Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-BK108XI
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 360 Stücke:
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AnzahlPrivatkunde
1+32.19 EUR
10+28.57 EUR
25+27.25 EUR
40+26.58 EUR
80+25.64 EUR
230+24.28 EUR
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CY14V101QS-BK108XQ Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-BK108XQ
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 24FBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 390 Stücke:
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AnzahlPrivatkunde
1+25.05 EUR
10+22.23 EUR
25+21.21 EUR
40+20.69 EUR
80+20.4 EUR
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CY14V101QS-SF108XQ Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SF108XQ
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 368 Stücke:
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AnzahlPrivatkunde
1+28.86 EUR
10+25.62 EUR
25+24.43 EUR
50+23.73 EUR
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CY14V101QS-SE108XIT Infineon-CY14V101QS_1-Mbit_(128K_8)_Quad_SPI_nvSRAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed151594d8a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14V101QS-SE108XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 108 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.2 EUR
10+27.95 EUR
25+27.57 EUR
50+27.23 EUR
100+23.86 EUR
250+22.84 EUR
500+22.69 EUR
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IPB720P15LMATMA1 Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e
IPB720P15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+4.5 EUR
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IPB720P15LMATMA1 Infineon-IPB720P15LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9d41c3b4f5e
IPB720P15LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 5.55mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
auf Bestellung 1268 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.88 EUR
10+7.97 EUR
50+6.28 EUR
100+5.75 EUR
500+5.32 EUR
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IPL60R115CFD7AUMA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPL60R115CFD7AUMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
Produkt ist nicht verfügbar
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IPL60R115CFD7AUMA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPL60R115CFD7AUMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Supplier Device Package: PG-VSON-4
auf Bestellung 129 Stücke:
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AnzahlPrivatkunde
3+9.57 EUR
10+6.34 EUR
50+4.96 EUR
100+4.51 EUR
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IRF7807VPBF irf7807vpbf.pdf?fileId=5546d462533600a4015356084a061ce2
IRF7807VPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Produkt ist nicht verfügbar
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T2563N80TOHXPSA1 DS_T2563N_11_0.pdf?fileId=db3a3043243b5f1701249621aeef1662
T2563N80TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 3600A DO-200AE
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Produkt ist nicht verfügbar
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T2563N80TS15XPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
Produkt ist nicht verfügbar
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T2563N85TS12XOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE
Packaging: Bulk
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: 120°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3330 A
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8.5 kV
Produkt ist nicht verfügbar
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IR21364SPBF IR21364%28S%2CJ%29PbF.pdf
IR21364SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB60R160P6ATMA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPB60R160P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.71 EUR
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IPB60R160P6ATMA1 Infineon-IPX60R160P6-DS-v02_02-EN.pdf?fileId=db3a3043414fd3ef01415efd27711e0b
IPB60R160P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
auf Bestellung 1014 Stücke:
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AnzahlPrivatkunde
3+7.75 EUR
10+5.08 EUR
50+3.94 EUR
100+3.57 EUR
500+2.99 EUR
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POWERDRILL2GOTOBO1
POWERDRILL2GOTOBO1
Hersteller: Infineon Technologies
Description: CONTROL TRIGGER 2GO
Packaging: Bulk
For Use With/Related Products: 2GO, Shield2Go
Accessory Type: Magnet Holder
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+51.73 EUR
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BTF3080EJXUMA1 Infineon-BTF3080EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea921480e83
BTF3080EJXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Qualification: AEC-Q100
Grade: Automotive
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 71mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+1.2 EUR
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BTF3080EJXUMA1 Infineon-BTF3080EJ-DS-v01_00-EN.pdf?fileId=5546d46265487f7b01659ea921480e83
BTF3080EJXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-8
Fault Protection: Over Current, Over Voltage, Short Circuit
Supplier Device Package: PG-TDSO-8-31
Ratio - Input:Output: 1:1
Qualification: AEC-Q100
Grade: Automotive
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Voltage - Load: 3V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 71mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: PWM
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5578 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
12+1.81 EUR
25+1.63 EUR
100+1.44 EUR
250+1.36 EUR
500+1.3 EUR
1000+1.29 EUR
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IR25750LTRPBF ir25750lpbf.pdf?fileId=5546d462533600a4015355ca1d0e16f7
IR25750LTRPBF
Hersteller: Infineon Technologies
Description: IC CURRENT SENSE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Applications: Current Sensing - MOSFET, IGBT
Current - Supply: 50µA
Supplier Device Package: SOT-23-5
Produkt ist nicht verfügbar
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IRSM808-105MHTR infineon-irsm808-105mh-ds-en.pdf
IRSM808-105MHTR
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 10A 31PQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 580mOhm
Applications: AC Motors
Current - Output / Channel: 10A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+4.7 EUR
Mindestbestellmenge: 2000 Stücke
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IRSM808-105MHTR infineon-irsm808-105mh-ds-en.pdf
IRSM808-105MHTR
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 10A 31PQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 580mOhm
Applications: AC Motors
Current - Output / Channel: 10A
Technology: UMOS
Voltage - Load: 400V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 3979 Stücke:
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2+11.73 EUR
10+7.89 EUR
100+5.75 EUR
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IPA126N10NM3SXKSA1 Infineon-IPA126N10NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d07a0046e37
IPA126N10NM3SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 39A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 231 Stücke:
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4+5.24 EUR
50+2.58 EUR
100+2.32 EUR
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IAUC26N10S5L245ATMA1 Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202
IAUC26N10S5L245ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC26N10S5L245ATMA1 Infineon-IAUC26N10S5L245-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd3ea760202
IAUC26N10S5L245ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tj)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4267 Stücke:
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AnzahlPrivatkunde
8+2.7 EUR
13+1.7 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.8 EUR
2000+0.75 EUR
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IPA126N10N3GXKSA1 IPA126N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122601c46c77f03
IPA126N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 1800 Stücke:
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AnzahlPrivatkunde
368+1.63 EUR
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IPI126N10N3 G Infineon-IPB123N10N3+G-DS-v02_03-EN.pdf?fileId=5546d4624fb7fef2014ffe55aac64b6e
IPI126N10N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 58A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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CY7C1061G30-10BVXI infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut
CY7C1061G30-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 42 Stücke:
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1+111.74 EUR
10+103.22 EUR
25+99.88 EUR
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CY7C1061G30-10ZSXI infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut
CY7C1061G30-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 2358 Stücke:
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1+132.28 EUR
10+122.14 EUR
25+118.16 EUR
50+115.19 EUR
108+111.96 EUR
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CY62167GN-45ZXI Infineon-CY62167GN18-55BVXIT-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee23ce068b1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167GN-45ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1061G30-10ZXI infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut
CY7C1061G30-10ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+111.74 EUR
10+103.22 EUR
25+99.88 EUR
96+95.06 EUR
192+92.64 EUR
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CY62167DV30LL-55BVXIT download
CY62167DV30LL-55BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167DV30LL-55BVXIT download
CY62167DV30LL-55BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 832 Stücke:
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AnzahlPrivatkunde
1+26.51 EUR
10+24.6 EUR
25+23.84 EUR
50+23.26 EUR
100+22.69 EUR
250+21.94 EUR
500+21.38 EUR
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XC888LM6FFA5VACKXUMA1 Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb
XC888LM6FFA5VACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: LINbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC888CM8FFI5VACFXUMA1 Infineon-XC88XCLM-DS-v01_02-en.pdf?fileId=db3a304412b407950112b40c4a9e0afb
XC888CM8FFI5VACFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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S25HS01GTDPBHI033 infineon-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf
S25HS01GTDPBHI033
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: PG-BGA-24-804
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS01GTFABHI033 infineon-512-mb-1-gb-semper-tm-flash-quad-spi-ja-datasheet-ja.pdf
S25HS01GTFABHI033
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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