Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124698) > Seite 659 nach 2079
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IRG4PSH71UDPBF | Infineon Technologies |
  Description: IGBT 1200V 99A SUPER-247Packaging: Tube Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Supplier Device Package: SUPER-247™ (TO-274AA) Td (on/off) @ 25°C: 46ns/250ns Switching Energy: 8.8mJ (on), 9.4mJ (off) Test Condition: 960V, 70A, 5Ohm, 15V Gate Charge: 380 nC Current - Collector (Ic) (Max): 99 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 350 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2EDN7533GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Supplier Device Package: PG-WSON-8-1 Driven Configuration: Low-Side DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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2EDN8523GXTMA1 | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 20V Input Type: Inverting Supplier Device Package: PG-WSON-8-1 Rise / Fall Time (Typ): 5.3ns, 4.5ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.98V Current - Peak Output (Source, Sink): 5A, 5A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPW95R060PFD7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 74.7A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 2.85mA Supplier Device Package: PG-TO247-3-41 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP65R065C7XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 33A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4V @ 850µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPT65R060CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Drain to Source Voltage (Vdss): 650 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPT65R060CFD7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 1988 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUZ40N08S5N100ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 80A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 14545 Stücke: Lieferzeit 10-14 Tag (e) |
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TT600N16KOFTIMHPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TC) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 600 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 1050 A Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPA60R600P7SE8228XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 6A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 21W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IRF8714TRPBFXTMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ106N12LM6ATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ISZ106N12LM6ATMA1 | Infineon Technologies |
Description: OPTIMOS 6 POWER-TRANSISTOR,120V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TSDSON-8 FL Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V |
auf Bestellung 2754 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N04S409AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 4V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N04S409AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 54W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 4V @ 22µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6580 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N04S408BATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-10 Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 65W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPG20N04S408BATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSON Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-10 Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 65W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 4668 Stücke: Lieferzeit 10-14 Tag (e) |
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D8320N04TVFXPSA1 | Infineon Technologies |
Description: DIODE STANDARD 400V 8320A Current - Reverse Leakage @ Vr: 100 mA @ 400 V Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -25°C ~ 150°C Current - Average Rectified (Io): 8320A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: DO-200AD Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF7313TRPBFXTMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6.5A 8DSO-902 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PG-DSO-8-902 |
auf Bestellung 13998 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2161PBF | Infineon Technologies |
Description: IC HALOGEN CNTRL 70KHZ 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Frequency: 34kHz ~ 70kHz Type: Halogen Controller Operating Temperature: -25°C ~ 125°C Voltage - Supply: 11.5V ~ 16.5V Supplier Device Package: 8-PDIP Dimming: Yes Current - Supply: 10 mA |
Produkt ist nicht verfügbar |
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KP108-PS | Infineon Technologies |
Description: AUTOMOTIVE PRESSURE SENSOR Packaging: Bulk |
auf Bestellung 761 Stücke: Lieferzeit 10-14 Tag (e) |
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| KP109P3XTMA1 | Infineon Technologies |
Description: KP109 MULTI-PROTOCOL PRESSURE SE Packaging: Bulk |
auf Bestellung 15630 Stücke: Lieferzeit 10-14 Tag (e) |
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| KP109P4XTMA1 | Infineon Technologies |
Description: KP109 MULTI-PROTOCOL PRESSURE SE Packaging: Bulk |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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KP108PSXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE PRESSURE SENSOR Packaging: Bulk |
auf Bestellung 15569 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3866LTI-030T | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 68QFN Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 38 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C3866AXA-035 | Infineon Technologies |
Description: IC MCU 8BIT 64KB FLASH 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 67MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x20b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1021B-15ZXC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 44TSOP II DigiKey Programmable: Not Verified Memory Organization: 64K x 16 Access Time: 15 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 15ns Supplier Device Package: 44-TSOP II Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 1Mbit Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Packaging: Bag |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 675 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C185-25PC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 28DIP Packaging: Tube Package / Case: 28-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-PDIP Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Access Time: 25 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C199CN-15PXC | Infineon Technologies |
Description: IC SRAM 256KBIT PARALLEL 28DIP Packaging: Tube Package / Case: 28-DIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-PDIP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IMZA120R030M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 25.6A, 18V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 11mA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG4BC40FPBF | Infineon Technologies |
Description: IGBT 600V 49A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 26ns/240ns Switching Energy: 370µJ (on), 1.81mJ (off) Test Condition: 480V, 27A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 49 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 196 A Power - Max: 160 W |
Produkt ist nicht verfügbar |
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S25FL256SAGMFVG01 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 705 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR1169STRPBF | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 11V ~ 19V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 2V, 2.25V Current - Peak Output (Source, Sink): 1A, 4A DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR1169STRPBF | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 11V ~ 19V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 20ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 2V, 2.25V Current - Peak Output (Source, Sink): 1A, 4A DigiKey Programmable: Not Verified |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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IDH10G65C5XKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 10A PGTO2202 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 340 µA @ 650 V |
Produkt ist nicht verfügbar |
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EVAL2KWZVSFBCFD7TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE3RBR4765JZ Packaging: Bulk Voltage - Output: 45V ~ 56V Voltage - Input: 350V ~ 420V Contents: Board(s) Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: ICE3RBR4765JZ Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down Outputs and Type: 1 Isolated Output Power - Output: 2kW |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS212A132LQXQXQLA1 | Infineon Technologies |
Description: EZ-PD PAG2S-AC INTEGRATED USB PD Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 1023 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS213A124SXQXLXA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tray Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 24-SOIC Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS213A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CYPAS213A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 1542 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS213A124SXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tape & Reel (TR) Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 24-SOIC Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS213A124SXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Cut Tape (CT) Package / Case: 24-SOIC (0.295", 7.50mm Width) Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 24-SOIC Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS211A132LQXQXQLA1 | Infineon Technologies |
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS212A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-AC INTEGRATED USB PD Packaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CYPAS212A132LQXQTXUMA1 | Infineon Technologies |
Description: EZ-PD PAG2S-AC INTEGRATED USB PD Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Signal Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAS213A132LQXQXQLA1 | Infineon Technologies |
Description: EZ-PD PAG2S-PS INTEGRATED USB PD Packaging: Tray Package / Case: 32-WFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Positive Frequency - Switching: 20kHz ~ 300kHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V Supplier Device Package: 32-QFN (5x5) Synchronous Rectifier: Yes Serial Interfaces: I2C Output Phases: 1 Duty Cycle (Max): 55% Clock Sync: Yes Number of Outputs: 1 |
auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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| PXC1331CPNG003XTMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER PG-VQFN-4 Packaging: Cut Tape (CT) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHL8510CRT | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 10DFN Packaging: Bulk Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 10.8V ~ 13.2V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 35 V Supplier Device Package: 10-DFN (3x3) Rise / Fall Time (Typ): 21ns, 18ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 1V Current - Peak Output (Source, Sink): 3A, 4A DigiKey Programmable: Not Verified |
auf Bestellung 621 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD2119-24LQXI | Infineon Technologies |
Description: IC USB TYPE C 1-PORT 24QFN Packaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 5.5V Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 14 DigiKey Programmable: Not Verified |
auf Bestellung 3309 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI20I12SVXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 5KV 1CH GATE DVR Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Number of Channels: 1 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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1EDI20I12SVXUMA1 | Infineon Technologies |
Description: DIGITAL ISO 5KV 1CH GATE DVR Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: Magnetic Coupling Voltage - Isolation: 5000Vrms Number of Channels: 1 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TT61N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 120A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 76 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - On State (It (RMS)) (Max): 120 A Voltage - Off State: 1.4 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SABC541U1ENCA | Infineon Technologies |
Description: LEGACY 8-BIT MCU Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 38428 Stücke: Lieferzeit 10-14 Tag (e) |
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SAB-C-541U-1EN | Infineon Technologies |
Description: LEGACY 8-BIT MCU Packaging: Bulk DigiKey Programmable: Not Verified |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY8C4127LCE-HV423 | Infineon Technologies |
Description: PSoC4 Packaging: Tray DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 980 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY7C1041G30-10VXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44SOJ Packaging: Tape & Reel (TR) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 330 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY7C1041G30-10VXIT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44SOJ Packaging: Cut Tape (CT) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 393 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1041G30-10ZSXAT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1041G30-10ZSXAT | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP II Packaging: Cut Tape (CT) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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ICL8001GXUMA1 | Infineon Technologies |
Description: IC LED DRIVER OFFL PWM 8DSO Topology: Flyback Internal Switch(s): No Applications: Lighting Operating Temperature: -25°C ~ 125°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Voltage - Supply (Max): 26V Voltage - Supply (Min): 9.8V Dimming: PWM Supplier Device Package: PG-DSO-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRG4PSH71UDPBF |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 99A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 46ns/250ns
Switching Energy: 8.8mJ (on), 9.4mJ (off)
Test Condition: 960V, 70A, 5Ohm, 15V
Gate Charge: 380 nC
Current - Collector (Ic) (Max): 99 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
Description: IGBT 1200V 99A SUPER-247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A
Supplier Device Package: SUPER-247™ (TO-274AA)
Td (on/off) @ 25°C: 46ns/250ns
Switching Energy: 8.8mJ (on), 9.4mJ (off)
Test Condition: 960V, 70A, 5Ohm, 15V
Gate Charge: 380 nC
Current - Collector (Ic) (Max): 99 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2EDN7533GXTMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: PG-WSON-8-1
Driven Configuration: Low-Side
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: PG-WSON-8-1
Driven Configuration: Low-Side
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2EDN8523GXTMA1 |
|
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPW95R060PFD7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 74.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.85mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V
Description: MOSFET N-CH 950V 74.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74.7A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 57A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.85mA
Supplier Device Package: PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9378 pF @ 400 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 31.58 EUR |
| 30+ | 19.24 EUR |
| 120+ | 16.54 EUR |
| IPP65R065C7XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Description: MOSFET N-CH 650V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 4V @ 850µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPT65R060CFD7XTMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPT65R060CFD7XTMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.57 EUR |
| 10+ | 9.22 EUR |
| 100+ | 6.82 EUR |
| IAUZ40N08S5N100ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 14545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |
| 2000+ | 0.89 EUR |
| TT600N16KOFTIMHPSA1 |
|
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TC)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
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| IPA60R600P7SE8228XKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Description: MOSFET N-CH 600V 6A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 21W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8714TRPBFXTMA1 |
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 20+ | 1.11 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2000+ | 0.45 EUR |
| ISZ106N12LM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Produkt ist nicht verfügbar
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| ISZ106N12LM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
Description: OPTIMOS 6 POWER-TRANSISTOR,120V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 60 V
auf Bestellung 2754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 2.68 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.64 EUR |
| IPG20N04S409AATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.95 EUR |
| IPG20N04S409AATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 54W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6580 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.67 EUR |
| 10+ | 2.33 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.13 EUR |
| 2000+ | 1.05 EUR |
| IPG20N04S408BATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPG20N04S408BATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 20A 8TDSON
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-10
Vgs(th) (Max) @ Id: 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 65W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4668 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.21 EUR |
| 10+ | 2.69 EUR |
| 100+ | 1.82 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.33 EUR |
| 2000+ | 1.23 EUR |
| D8320N04TVFXPSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE STANDARD 400V 8320A
Current - Reverse Leakage @ Vr: 100 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -25°C ~ 150°C
Current - Average Rectified (Io): 8320A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Packaging: Tray
Description: DIODE STANDARD 400V 8320A
Current - Reverse Leakage @ Vr: 100 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -25°C ~ 150°C
Current - Average Rectified (Io): 8320A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF7313TRPBFXTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.5A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
Description: MOSFET 2N-CH 30V 6.5A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
auf Bestellung 13998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| 2000+ | 0.55 EUR |
| IR2161PBF |
|
Hersteller: Infineon Technologies
Description: IC HALOGEN CNTRL 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 34kHz ~ 70kHz
Type: Halogen Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.5V
Supplier Device Package: 8-PDIP
Dimming: Yes
Current - Supply: 10 mA
Description: IC HALOGEN CNTRL 70KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 34kHz ~ 70kHz
Type: Halogen Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.5V
Supplier Device Package: 8-PDIP
Dimming: Yes
Current - Supply: 10 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KP108-PS |
auf Bestellung 761 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 151+ | 3.96 EUR |
| KP109P3XTMA1 |
auf Bestellung 15630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 102+ | 5.41 EUR |
| KP109P4XTMA1 |
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 102+ | 5.41 EUR |
| KP108PSXTMA1 |
|
auf Bestellung 15569 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 102+ | 5.41 EUR |
| CY8C3866LTI-030T |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
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| CY8C3866AXA-035 |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1021B-15ZXC |
|
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bag
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Bag
Produkt ist nicht verfügbar
Mindestbestellmenge: 675 Stücke
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| CY7C185-25PC |
|
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CY7C199CN-15PXC |
|
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT PARALLEL 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-PDIP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| IMZA120R030M1HXKSA1 |
|
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 25.6A, 18V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 11mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 25.6A, 18V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 11mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 800 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.71 EUR |
| 30+ | 20.8 EUR |
| 120+ | 19.24 EUR |
| IRG4BC40FPBF |
|
Hersteller: Infineon Technologies
Description: IGBT 600V 49A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
Description: IGBT 600V 49A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 196 A
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| S25FL256SAGMFVG01 |
|
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 705 Stücke
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| IR1169STRPBF |
|
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IR1169STRPBF |
|
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 19V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 20ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.25V
Current - Peak Output (Source, Sink): 1A, 4A
DigiKey Programmable: Not Verified
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.49 EUR |
| 10+ | 3.32 EUR |
| 25+ | 3.03 EUR |
| 100+ | 2.71 EUR |
| 250+ | 2.56 EUR |
| 500+ | 2.49 EUR |
| IDH10G65C5XKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 340 µA @ 650 V
Description: DIODE SIL CARB 650V 10A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 340 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EVAL2KWZVSFBCFD7TOBO1 |
|
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE3RBR4765JZ
Packaging: Bulk
Voltage - Output: 45V ~ 56V
Voltage - Input: 350V ~ 420V
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE3RBR4765JZ
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Power - Output: 2kW
Description: EVAL BOARD FOR ICE3RBR4765JZ
Packaging: Bulk
Voltage - Output: 45V ~ 56V
Voltage - Input: 350V ~ 420V
Contents: Board(s)
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE3RBR4765JZ
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
Power - Output: 2kW
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 958.63 EUR |
| CYPAS212A132LQXQXQLA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 1023 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.87 EUR |
| 10+ | 4.39 EUR |
| 25+ | 4.02 EUR |
| 100+ | 3.62 EUR |
| 490+ | 3.31 EUR |
| 980+ | 3.21 EUR |
| CYPAS213A124SXQXLXA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.3 EUR |
| 10+ | 3.96 EUR |
| 31+ | 3.56 EUR |
| 124+ | 3.21 EUR |
| 279+ | 3.14 EUR |
| CYPAS213A132LQXQTXUMA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYPAS213A132LQXQTXUMA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 1542 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 4.08 EUR |
| 25+ | 3.74 EUR |
| 100+ | 3.36 EUR |
| 250+ | 3.18 EUR |
| 500+ | 3.12 EUR |
| CYPAS213A124SXQTXUMA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.14 EUR |
| CYPAS213A124SXQTXUMA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 24-SOIC
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.3 EUR |
| 10+ | 3.96 EUR |
| 25+ | 3.63 EUR |
| 100+ | 3.26 EUR |
| 250+ | 3.14 EUR |
| CYPAS211A132LQXQXQLA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.07 EUR |
| 10+ | 4.56 EUR |
| 25+ | 4.18 EUR |
| 100+ | 3.76 EUR |
| 490+ | 3.44 EUR |
| 980+ | 3.34 EUR |
| CYPAS212A132LQXQTXUMA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYPAS212A132LQXQTXUMA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-AC INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.87 EUR |
| 10+ | 4.39 EUR |
| 25+ | 4.02 EUR |
| 100+ | 3.62 EUR |
| 250+ | 3.43 EUR |
| 500+ | 3.37 EUR |
| CYPAS213A132LQXQXQLA1 |
|
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Description: EZ-PD PAG2S-PS INTEGRATED USB PD
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Serial Interfaces: I2C
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 4.08 EUR |
| 25+ | 3.74 EUR |
| 100+ | 3.36 EUR |
| 490+ | 3.07 EUR |
| 980+ | 2.98 EUR |
| PXC1331CPNG003XTMA1 |
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Cut Tape (CT)
Description: IFX PRIMARION CNTRLLER PG-VQFN-4
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.63 EUR |
| 10+ | 6.56 EUR |
| 25+ | 6.03 EUR |
| 100+ | 5.47 EUR |
| 250+ | 5.2 EUR |
| 500+ | 5.03 EUR |
| 1000+ | 4.9 EUR |
| CHL8510CRT |
|
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 21ns, 18ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1V
Current - Peak Output (Source, Sink): 3A, 4A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 10DFN
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 10.8V ~ 13.2V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35 V
Supplier Device Package: 10-DFN (3x3)
Rise / Fall Time (Typ): 21ns, 18ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 1V
Current - Peak Output (Source, Sink): 3A, 4A
DigiKey Programmable: Not Verified
auf Bestellung 621 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 436+ | 1.23 EUR |
| CYPD2119-24LQXI |
|
Hersteller: Infineon Technologies
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
Description: IC USB TYPE C 1-PORT 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
auf Bestellung 3309 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 10+ | 2.38 EUR |
| 25+ | 2.17 EUR |
| 100+ | 1.93 EUR |
| 490+ | 1.75 EUR |
| 980+ | 1.7 EUR |
| 1470+ | 1.67 EUR |
| 2940+ | 1.63 EUR |
| 1EDI20I12SVXUMA1 |
|
Hersteller: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 8.32 EUR |
| 1EDI20I12SVXUMA1 |
|
Hersteller: Infineon Technologies
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
Description: DIGITAL ISO 5KV 1CH GATE DVR
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Magnetic Coupling
Voltage - Isolation: 5000Vrms
Number of Channels: 1
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.66 EUR |
| 10+ | 13.24 EUR |
| 25+ | 12.63 EUR |
| 100+ | 10.97 EUR |
| 250+ | 10.47 EUR |
| 500+ | 9.56 EUR |
| TT61N14KOFHPSA1 |
|
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SABC541U1ENCA |
Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 38428 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 11.14 EUR |
| SAB-C-541U-1EN |
|
Hersteller: Infineon Technologies
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: LEGACY 8-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 11.14 EUR |
| CY8C4127LCE-HV423 |
Hersteller: Infineon Technologies
Description: PSoC4
Packaging: Tray
DigiKey Programmable: Not Verified
Description: PSoC4
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 980 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1041G30-10VXIT |
|
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
| CY7C1041G30-10VXIT |
|
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Cut Tape (CT)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.82 EUR |
| 10+ | 9.15 EUR |
| 25+ | 8.88 EUR |
| 50+ | 8.68 EUR |
| 100+ | 8.46 EUR |
| 250+ | 8.2 EUR |
| CY7C1041G30-10ZSXAT |
|
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 11.95 EUR |
| CY7C1041G30-10ZSXAT |
|
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.65 EUR |
| 10+ | 15.33 EUR |
| 25+ | 15.01 EUR |
| 50+ | 14.96 EUR |
| 100+ | 13.42 EUR |
| 250+ | 13.02 EUR |
| 500+ | 12.38 EUR |
| ICL8001GXUMA1 |
|
Hersteller: Infineon Technologies
Description: IC LED DRIVER OFFL PWM 8DSO
Topology: Flyback
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -25°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8
Description: IC LED DRIVER OFFL PWM 8DSO
Topology: Flyback
Internal Switch(s): No
Applications: Lighting
Operating Temperature: -25°C ~ 125°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply (Max): 26V
Voltage - Supply (Min): 9.8V
Dimming: PWM
Supplier Device Package: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH