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CYT2B95CACQ0AZSGST CYT2B95CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.21 EUR
10+22.32 EUR
25+20.86 EUR
100+19.24 EUR
250+18.47 EUR
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CYT2BL3CAAQ0AZSGST CYT2BL3CAAQ0AZSGST Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: IC MCU 32BIT 4.063MB FLSH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 49
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 45x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 512K x 8
Program Memory Size: 4.063MB (4.063M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 1440 Stücke:
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1+29.32 EUR
10+23.24 EUR
25+21.73 EUR
100+20.06 EUR
250+19.27 EUR
500+18.79 EUR
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CYT2B95BACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.82 EUR
10+27.41 EUR
25+26.28 EUR
90+23.15 EUR
270+22 EUR
450+20.59 EUR
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CYT2B94CACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 52x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
auf Bestellung 1190 Stücke:
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1+31.83 EUR
10+29.26 EUR
25+28.05 EUR
119+24.72 EUR
238+23.5 EUR
476+21.98 EUR
952+20.16 EUR
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CYT2B95CACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 900 Stücke:
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1+32.94 EUR
10+30.29 EUR
25+29.02 EUR
90+25.57 EUR
270+24.32 EUR
450+22.75 EUR
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CYAT817AZS61-3A002 CYAT817AZS61-3A002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 810 Stücke:
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1+56.28 EUR
10+51.9 EUR
25+49.56 EUR
90+44.32 EUR
270+42.27 EUR
450+40.23 EUR
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FZ1500R33HE3C1BPSA1 Infineon Technologies infineon-fz1500r33he3-datasheet-en-09018a9080013597.pdf Description: IGBT MOD 3300V 1500A AG-IHVB190
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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IRF7811AVTRPBF IRF7811AVTRPBF Infineon Technologies irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6 description Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7811AVTRPBF IRF7811AVTRPBF Infineon Technologies irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6 description Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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PASCO2V11BUMA1 Infineon Technologies Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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AIMBG75R140M1HXTMA1 AIMBG75R140M1HXTMA1 Infineon Technologies Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2 Description: SICFET N-CH 750V 17A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AIMBG75R140M1HXTMA1 AIMBG75R140M1HXTMA1 Infineon Technologies Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2 Description: SICFET N-CH 750V 17A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.13 EUR
10+8.14 EUR
50+6.43 EUR
100+5.88 EUR
500+5.46 EUR
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AIMDQ75R140M1HXUMA1 AIMDQ75R140M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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AIMDQ75R140M1HXUMA1 AIMDQ75R140M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 630 Stücke:
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2+12.61 EUR
10+8.47 EUR
100+6.13 EUR
Mindestbestellmenge: 2 Stücke
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AIMZA75R140M1HXKSA1 AIMZA75R140M1HXKSA1 Infineon Technologies Infineon-AIMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6acbb010e90 Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
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2+11.13 EUR
30+6.33 EUR
120+5.27 EUR
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S99-50593 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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PVT322APBF PVT322APBF Infineon Technologies IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 IQDH45N04LM6ATMA1 Infineon Technologies Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298 Description: TRENCH <= 40V
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSON-8-9
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IQDH45N04LM6ATMA1 IQDH45N04LM6ATMA1 Infineon Technologies Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 110 Stücke:
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3+8.88 EUR
10+5.88 EUR
50+4.58 EUR
100+4.16 EUR
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PEF2235NV4.1-IPAT Infineon Technologies Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
19+32.15 EUR
Mindestbestellmenge: 19 Stücke
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PEF2235NV4.1 Infineon Technologies Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 170 Stücke:
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19+32.15 EUR
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PEF22553HTV2.1 Infineon Technologies Description: LANTIQ PEF22553 TELECOMS IC
Packaging: Bulk
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
8+80.73 EUR
Mindestbestellmenge: 8 Stücke
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IPA040N08NM5SXKSA1 IPA040N08NM5SXKSA1 Infineon Technologies Infineon-IPA040N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cf4ced66e27 Description: TRENCH 40<-<100V PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.8V @ 109µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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CYPAS211A132LQXQTXUMA1 CYPAS211A132LQXQTXUMA1 Infineon Technologies Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131 Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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CYPAS211A132LQXQTXUMA1 CYPAS211A132LQXQTXUMA1 Infineon Technologies Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131 Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 2000 Stücke:
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3+8.77 EUR
10+6.66 EUR
25+6.14 EUR
100+5.56 EUR
250+5.3 EUR
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IRG4BH20K-SPBF IRG4BH20K-SPBF Infineon Technologies Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7 Description: IGBT 1200V 11A D2PAK
Power - Max: 60 W
Current - Collector Pulsed (Icm): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 28 nC
Test Condition: 960V, 5A, 50Ohm, 15V
Switching Energy: 450µJ (on), 440µJ (off)
Td (on/off) @ 25°C: 23ns/93ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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TLE4274GSV25HTMA1 TLE4274GSV25HTMA1 Infineon Technologies Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99 Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 3903 Stücke:
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11+2.05 EUR
15+1.49 EUR
25+1.34 EUR
100+1.19 EUR
250+1.11 EUR
500+1.06 EUR
1000+1.04 EUR
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S99PL032J0080 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1413KV18-300BZCT CY7C1413KV18-300BZCT Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BCM9WICED_SENSE2 BCM9WICED_SENSE2 Infineon Technologies Description: BLUETOOTH/802.15.1 WICEDSENSE2 B
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
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1+38.58 EUR
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BCM92073X_LE_TAG4 BCM92073X_LE_TAG4 Infineon Technologies Description: EVALUATION AND DEBUG BOARD FOR T
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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BCM92073X_LE_KIT BCM92073X_LE_KIT Infineon Technologies BCM92073X_LE_KIT_Web.pdf Description: WICED SMART DEVELOPMENT KIT FOR
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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BCM920705EMB_ECLK Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: EVAL BOARD FOR BCM920705
Packaging: Bulk
For Use With/Related Products: BCM920705
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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DDB6U180N16RRB37BOSA1 DDB6U180N16RRB37BOSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Supplier Device Package: Module
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3+200.47 EUR
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DDB6U180N22RBPSA1 DDB6U180N22RBPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
auf Bestellung 15 Stücke:
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1+162.82 EUR
15+129.09 EUR
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TLE4973AE35S5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
Produkt ist nicht verfügbar
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C167CSLMCAKXUMA3 C167CSLMCAKXUMA3 Infineon Technologies Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t Description: C167CS - LEGACY 16-BIT MICROCONT
DigiKey Programmable: Not Verified
Packaging: Bulk
Core Processor: C166
Program Memory Type: ROMless
Number of I/O: 111
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 11K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
auf Bestellung 150 Stücke:
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C167CSLMCABXQLA1 C167CSLMCABXQLA1 Infineon Technologies c167cs4r_ds_v2.2_2001_08.pdf?folderId=db3a304412b407950112b41e5aa03294&fileId=db3a304412b407950112b41e5afd3295&ack=t Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
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4+136.71 EUR
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C167CSLMCAFXQLA2 C167CSLMCAFXQLA2 Infineon Technologies C167CS-4R_-L_v2.2.pdf Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
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C167CSL16M3VCAFXQLA2 C167CSL16M3VCAFXQLA2 Infineon Technologies Description: IC MCU 16BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C167CSLMCAKXUMA3 Infineon Technologies Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t Description: IC MCU 32BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ0506NSATMA1 BSZ0506NSATMA1 Infineon Technologies Infineon-BSZ0506NS-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cfbae64b902a3 Description: MOSFET N-CH 30V 15A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 8344 Stücke:
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10+2.2 EUR
16+1.37 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.58 EUR
Mindestbestellmenge: 10 Stücke
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CY15V104QSN-108SXIT CY15V104QSN-108SXIT Infineon Technologies Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71 Description: IC FRAM 4MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IQDH29NE2LM5ATMA1 IQDH29NE2LM5ATMA1 Infineon Technologies Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IQDH29NE2LM5ATMA1 IQDH29NE2LM5ATMA1 Infineon Technologies Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
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IQDH35N03LM5ATMA1 IQDH35N03LM5ATMA1 Infineon Technologies Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
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IQDH35N03LM5ATMA1 IQDH35N03LM5ATMA1 Infineon Technologies Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 4367 Stücke:
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3+8.71 EUR
10+5.75 EUR
100+4.07 EUR
500+3.5 EUR
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IQDH88N06LM5ATMA1 IQDH88N06LM5ATMA1 Infineon Technologies Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IQDH88N06LM5ATMA1 IQDH88N06LM5ATMA1 Infineon Technologies Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 3826 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.32 EUR
10+6.2 EUR
100+4.44 EUR
500+4.26 EUR
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IQD009N06NM5ATMA1 IQD009N06NM5ATMA1 Infineon Technologies Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD009N06NM5ATMA1 IQD009N06NM5ATMA1 Infineon Technologies Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4587 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.53 EUR
10+6.32 EUR
100+4.5 EUR
500+3.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5ATMA1 IQD016N08NM5ATMA1 Infineon Technologies Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5ATMA1 IQD016N08NM5ATMA1 Infineon Technologies Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 2873 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.5 EUR
10+7.69 EUR
50+6.06 EUR
100+5.53 EUR
500+5.08 EUR
Mindestbestellmenge: 2 Stücke
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IQD020N10NM5ATMA1 IQD020N10NM5ATMA1 Infineon Technologies Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD020N10NM5ATMA1 IQD020N10NM5ATMA1 Infineon Technologies Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 3969 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.94 EUR
10+7.31 EUR
50+5.75 EUR
100+5.25 EUR
500+4.78 EUR
Mindestbestellmenge: 2 Stücke
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IQD063N15NM5ATMA1 IQD063N15NM5ATMA1 Infineon Technologies Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD063N15NM5ATMA1 IQD063N15NM5ATMA1 Infineon Technologies Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 4042 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.51 EUR
10+9.12 EUR
100+6.62 EUR
500+6.31 EUR
Mindestbestellmenge: 2 Stücke
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TLE4998S8DXUMA1 Infineon Technologies Infineon-TLE4998S8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891dc6b31a5 Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLE4998P8DXUMA1 Infineon Technologies TLE4998P8_D_Rev1.1_2017-01.pdf Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLE4998C8DXUMA1 Infineon Technologies Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYT2B95CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95CACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.21 EUR
10+22.32 EUR
25+20.86 EUR
100+19.24 EUR
250+18.47 EUR
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CYT2BL3CAAQ0AZSGST Infineon-TRAVEO_2G_CY2BL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL3CAAQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4.063MB FLSH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 49
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 45x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 512K x 8
Program Memory Size: 4.063MB (4.063M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+29.32 EUR
10+23.24 EUR
25+21.73 EUR
100+20.06 EUR
250+19.27 EUR
500+18.79 EUR
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CYT2B95BACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+29.82 EUR
10+27.41 EUR
25+26.28 EUR
90+23.15 EUR
270+22 EUR
450+20.59 EUR
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CYT2B94CACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: 80-LQFP (12x12)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 52x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
auf Bestellung 1190 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.83 EUR
10+29.26 EUR
25+28.05 EUR
119+24.72 EUR
238+23.5 EUR
476+21.98 EUR
952+20.16 EUR
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CYT2B95CACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 78
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+32.94 EUR
10+30.29 EUR
25+29.02 EUR
90+25.57 EUR
270+24.32 EUR
450+22.75 EUR
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CYAT817AZS61-3A002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS61-3A002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Qualification: AEC-Q100
Grade: Automotive
Touchscreen: 2 Wire Capacitive
Supplier Device Package: 100-TQFP (14x14)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C, SPI
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+56.28 EUR
10+51.9 EUR
25+49.56 EUR
90+44.32 EUR
270+42.27 EUR
450+40.23 EUR
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FZ1500R33HE3C1BPSA1 infineon-fz1500r33he3-datasheet-en-09018a9080013597.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 1500A AG-IHVB190
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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IRF7811AVTRPBF description irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6
IRF7811AVTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7811AVTRPBF description irf7811avpbf.pdf?fileId=5546d462533600a40153560898001cf6
IRF7811AVTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1801 pF @ 10 V
Produkt ist nicht verfügbar
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PASCO2V11BUMA1
Hersteller: Infineon Technologies
Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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AIMBG75R140M1HXTMA1 Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2
AIMBG75R140M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 17A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG75R140M1HXTMA1 Infineon-AIMBG75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8b6555fe018bae4dadd27ee2
AIMBG75R140M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 17A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.13 EUR
10+8.14 EUR
50+6.43 EUR
100+5.88 EUR
500+5.46 EUR
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AIMDQ75R140M1HXUMA1 Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f
AIMDQ75R140M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R140M1HXUMA1 Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f
AIMDQ75R140M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 630 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.61 EUR
10+8.47 EUR
100+6.13 EUR
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AIMZA75R140M1HXKSA1 Infineon-AIMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6acbb010e90
AIMZA75R140M1HXKSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.13 EUR
30+6.33 EUR
120+5.27 EUR
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S99-50593
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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PVT322APBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
PVT322APBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298
IQDH45N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSON-8-9
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298
IQDH45N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 110 Stücke:
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3+8.88 EUR
10+5.88 EUR
50+4.58 EUR
100+4.16 EUR
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PEF2235NV4.1-IPAT
Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 2390 Stücke:
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19+32.15 EUR
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PEF2235NV4.1
Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 170 Stücke:
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AnzahlPrivatkunde
19+32.15 EUR
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PEF22553HTV2.1
Hersteller: Infineon Technologies
Description: LANTIQ PEF22553 TELECOMS IC
Packaging: Bulk
auf Bestellung 660 Stücke:
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AnzahlPrivatkunde
8+80.73 EUR
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IPA040N08NM5SXKSA1 Infineon-IPA040N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cf4ced66e27
IPA040N08NM5SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.8V @ 109µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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CYPAS211A132LQXQTXUMA1 Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131
CYPAS211A132LQXQTXUMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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CYPAS211A132LQXQTXUMA1 Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131
CYPAS211A132LQXQTXUMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.77 EUR
10+6.66 EUR
25+6.14 EUR
100+5.56 EUR
250+5.3 EUR
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IRG4BH20K-SPBF Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7
IRG4BH20K-SPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 11A D2PAK
Power - Max: 60 W
Current - Collector Pulsed (Icm): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 11 A
Gate Charge: 28 nC
Test Condition: 960V, 5A, 50Ohm, 15V
Switching Energy: 450µJ (on), 440µJ (off)
Td (on/off) @ 25°C: 23ns/93ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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TLE4274GSV25HTMA1 Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99
TLE4274GSV25HTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 3903 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
15+1.49 EUR
25+1.34 EUR
100+1.19 EUR
250+1.11 EUR
500+1.06 EUR
1000+1.04 EUR
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S99PL032J0080
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1413KV18-300BZCT Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1413KV18-300BZCT
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCM9WICED_SENSE2
BCM9WICED_SENSE2
Hersteller: Infineon Technologies
Description: BLUETOOTH/802.15.1 WICEDSENSE2 B
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
auf Bestellung 27 Stücke:
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1+38.58 EUR
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BCM92073X_LE_TAG4
BCM92073X_LE_TAG4
Hersteller: Infineon Technologies
Description: EVALUATION AND DEBUG BOARD FOR T
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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BCM92073X_LE_KIT BCM92073X_LE_KIT_Web.pdf
BCM92073X_LE_KIT
Hersteller: Infineon Technologies
Description: WICED SMART DEVELOPMENT KIT FOR
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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BCM920705EMB_ECLK Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BCM920705
Packaging: Bulk
For Use With/Related Products: BCM920705
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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DDB6U180N16RRB37BOSA1 Part_Number_Guide_Web.pdf
DDB6U180N16RRB37BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Supplier Device Package: Module
auf Bestellung 3 Stücke:
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3+200.47 EUR
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DDB6U180N22RBPSA1
DDB6U180N22RBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
auf Bestellung 15 Stücke:
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1+162.82 EUR
15+129.09 EUR
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TLE4973AE35S5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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C167CSLMCAKXUMA3 Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t
C167CSLMCAKXUMA3
Hersteller: Infineon Technologies
Description: C167CS - LEGACY 16-BIT MICROCONT
DigiKey Programmable: Not Verified
Packaging: Bulk
Core Processor: C166
Program Memory Type: ROMless
Number of I/O: 111
Supplier Device Package: P-MQFP-144-8
Peripherals: POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 11K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 144-BQFP
auf Bestellung 150 Stücke:
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AnzahlPrivatkunde
5+118.65 EUR
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C167CSLMCABXQLA1 c167cs4r_ds_v2.2_2001_08.pdf?folderId=db3a304412b407950112b41e5aa03294&fileId=db3a304412b407950112b41e5afd3295&ack=t
C167CSLMCABXQLA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+136.71 EUR
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C167CSLMCAFXQLA2 C167CS-4R_-L_v2.2.pdf
C167CSLMCAFXQLA2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+116.02 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
C167CSL16M3VCAFXQLA2
C167CSL16M3VCAFXQLA2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C167CSLMCAKXUMA3 Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0506NSATMA1 Infineon-BSZ0506NS-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cfbae64b902a3
BSZ0506NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 8344 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.2 EUR
16+1.37 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.58 EUR
Mindestbestellmenge: 10 Stücke
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CY15V104QSN-108SXIT Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71
CY15V104QSN-108SXIT
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IQDH29NE2LM5ATMA1 Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c
IQDH29NE2LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQDH29NE2LM5ATMA1 Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c
IQDH29NE2LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQDH35N03LM5ATMA1 Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f
IQDH35N03LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQDH35N03LM5ATMA1 Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f
IQDH35N03LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 4367 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.71 EUR
10+5.75 EUR
100+4.07 EUR
500+3.5 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQDH88N06LM5ATMA1 Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2
IQDH88N06LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQDH88N06LM5ATMA1 Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2
IQDH88N06LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 3826 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.32 EUR
10+6.2 EUR
100+4.44 EUR
500+4.26 EUR
Mindestbestellmenge: 3 Stücke
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IQD009N06NM5ATMA1 Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465
IQD009N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD009N06NM5ATMA1 Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465
IQD009N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4587 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.53 EUR
10+6.32 EUR
100+4.5 EUR
500+3.95 EUR
Mindestbestellmenge: 3 Stücke
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IQD016N08NM5ATMA1 Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe
IQD016N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5ATMA1 Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe
IQD016N08NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 2873 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.5 EUR
10+7.69 EUR
50+6.06 EUR
100+5.53 EUR
500+5.08 EUR
Mindestbestellmenge: 2 Stücke
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IQD020N10NM5ATMA1 Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8
IQD020N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IQD020N10NM5ATMA1 Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8
IQD020N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 3969 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.94 EUR
10+7.31 EUR
50+5.75 EUR
100+5.25 EUR
500+4.78 EUR
Mindestbestellmenge: 2 Stücke
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IQD063N15NM5ATMA1 Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b
IQD063N15NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IQD063N15NM5ATMA1 Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b
IQD063N15NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 4042 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.51 EUR
10+9.12 EUR
100+6.62 EUR
500+6.31 EUR
Mindestbestellmenge: 2 Stücke
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TLE4998S8DXUMA1 Infineon-TLE4998S8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891dc6b31a5
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4998P8DXUMA1 TLE4998P8_D_Rev1.1_2017-01.pdf
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE4998C8DXUMA1 Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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