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4DIR1421HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DIGITAL ISOLATORS
Number of Channels: 4
Pulse Width Distortion (Max): 15ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Supplier Device Package: PG-DSO-16
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Capacitive Coupling
Data Rate: 40Mbps
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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4DIR1421HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DIGITAL ISOLATORS
Number of Channels: 4
Pulse Width Distortion (Max): 15ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Supplier Device Package: PG-DSO-16
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Capacitive Coupling
Data Rate: 40Mbps
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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500+3.49 EUR
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4DIR1400HXUMA1 4DIR1400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Number of Channels: 4
Pulse Width Distortion (Max): 3ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Supplier Device Package: PG-DSO-16-46
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Magnetic Coupling
Data Rate: 40Mbps
Voltage - Supply: 2.7V ~ 6.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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4DIR1400HXUMA1 4DIR1400HXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436 Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Number of Channels: 4
Pulse Width Distortion (Max): 3ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Supplier Device Package: PG-DSO-16-46
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Magnetic Coupling
Data Rate: 40Mbps
Voltage - Supply: 2.7V ~ 6.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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KITXMC47RELAXV1TOBO1 KITXMC47RELAXV1TOBO1 Infineon Technologies Infineon-Board_User_Manual_XMC4700_XMC4800_Relax_Kit_Series-UserManual-v01_04-EN.pdf?fileId=5546d46250cc1fdf01513f8e052d07fc Description: RELAX KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4700
Platform: Relax Kit
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ISK024NE2LM5AUSA1 ISK024NE2LM5AUSA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
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ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 Infineon Technologies Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2 Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
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ISK057N04LM6ATLA1 ISK057N04LM6ATLA1 Infineon Technologies Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2 Description: MOSFET N-CH 40V 64A 6VSON
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Typ): 5.9mOhm (Max)
Operating Temperature: -55°C ~ 155°C (TJ)
Switch Type: USB Switch
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: PG-VSON-6-1
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 40V
Input Type: Non-Inverting
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ISK036N03LM5AUSA1 ISK036N03LM5AUSA1 Infineon Technologies Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3 Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-VSON-6-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
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ISK036N03LM5AUSA1 ISK036N03LM5AUSA1 Infineon Technologies Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3 Description: TRENCH <= 40V
Supplier Device Package: PG-VSON-6-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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EVALBDPSDRIVERTOBO1 EVALBDPSDRIVERTOBO1 Infineon Technologies infineon-2edf7175f-datasheet-en.pdf Description: EVAL BOARD FOR 2EDF7175F
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDF7175F
Supplied Contents: Board(s)
Primary Attributes: 36V ~ 75V Operating Voltage
Embedded: Yes, MCU
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CY7C1018DV33-10VXIT CY7C1018DV33-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Packaging: Tape & Reel (TR)
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CY7C1018DV33-10VXIT CY7C1018DV33-10VXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Packaging: Cut Tape (CT)
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IDH05G120C5XKSA1 IDH05G120C5XKSA1 Infineon Technologies Infineon-IDH05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014ffffaf7604e24 Description: DIODE SIL CARB 1200V 5A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
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TT285N16KOFHPSA2 TT285N16KOFHPSA2 Infineon Technologies Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5 Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 285 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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TT280N18SOFHPSA1 TT280N18SOFHPSA1 Infineon Technologies Infineon-TT280N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e50ebf7edb Description: SCR MODULE 1.8KV 520A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 280 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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CG8425AA Infineon Technologies Description: ASYNC
Packaging: Tray
Produkt ist nicht verfügbar
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CG7781AA Infineon Technologies Description: ASYNC
Packaging: Tray
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CY8C4124PVA-442Z CY8C4124PVA-442Z Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4124PVA-442ZT CY8C4124PVA-442ZT Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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CY8C4124LQS-S433 CY8C4124LQS-S433 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CY8C4124LQS-S433T CY8C4124LQS-S433T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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7GA6Y0205 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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792826-00 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CG8202AA Infineon Technologies Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
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CG8874AM Infineon Technologies Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD157B1W01005E6327XTSA1 ESD157B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3 Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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ESD157B1W01005E6327XTSA1 ESD157B1W01005E6327XTSA1 Infineon Technologies Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3 Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
auf Bestellung 14099 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.3 EUR
117+0.18 EUR
166+0.13 EUR
191+0.11 EUR
500+0.08 EUR
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ESD156B1W0201E6327XTSA1 ESD156B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0 Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD156B1W0201E6327XTSA1 ESD156B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0 Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.38 EUR
92+0.23 EUR
129+0.17 EUR
148+0.14 EUR
500+0.1 EUR
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ESD151B1W0201E6327XTSA1 ESD151B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743 Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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ESD151B1W0201E6327XTSA1 ESD151B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743 Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD155B2W0201E6327XTSA1 ESD155B2W0201E6327XTSA1 Infineon Technologies Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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ESD155B2W0201E6327XTSA1 ESD155B2W0201E6327XTSA1 Infineon Technologies Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 7877 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
80+0.26 EUR
112+0.19 EUR
128+0.17 EUR
500+0.12 EUR
Mindestbestellmenge: 48 Stücke
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CY7C1020D-10ZSXI CY7C1020D-10ZSXI Infineon Technologies download Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.83 EUR
10+10.81 EUR
25+10.6 EUR
40+10.52 EUR
135+9.45 EUR
270+9.41 EUR
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AUIRLS3034-7TRL AUIRLS3034-7TRL Infineon Technologies auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPZA65R018CFD7XKSA1 IPZA65R018CFD7XKSA1 Infineon Technologies Infineon-IPZA65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d89607bbf Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
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IPDQ65R017CFD7AXTMA1 IPDQ65R017CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8 Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 776 Stücke:
Lieferzeit 10-14 Tag (e)
1+35 EUR
10+27.86 EUR
25+26.07 EUR
100+24.36 EUR
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IPDQ65R029CFD7AXTMA1 IPDQ65R029CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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IPDQ65R029CFD7AXTMA1 IPDQ65R029CFD7AXTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 463W (Tc)
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.94 EUR
10+17.21 EUR
25+16.03 EUR
100+14.72 EUR
250+14.6 EUR
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IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 Infineon Technologies Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.39 EUR
Mindestbestellmenge: 5000 Stücke
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IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 Infineon Technologies Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 9667 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.01 EUR
10+3.22 EUR
50+2.46 EUR
100+2.21 EUR
500+1.77 EUR
Mindestbestellmenge: 5 Stücke
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IQE004NE1LM7ATMA1 IQE004NE1LM7ATMA1 Infineon Technologies Infineon-IQE004NE1LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c2139e478e Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IQE004NE1LM7ATMA1 IQE004NE1LM7ATMA1 Infineon Technologies Infineon-IQE004NE1LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c2139e478e Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 2027 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.01 EUR
10+3.22 EUR
50+2.46 EUR
100+2.21 EUR
500+1.77 EUR
Mindestbestellmenge: 5 Stücke
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IQE004NE1LM7CGSCATMA1 IQE004NE1LM7CGSCATMA1 Infineon Technologies Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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IQE004NE1LM7CGSCATMA1 IQE004NE1LM7CGSCATMA1 Infineon Technologies Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5423 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.77 EUR
10+5.11 EUR
50+3.96 EUR
100+3.59 EUR
500+3.02 EUR
Mindestbestellmenge: 3 Stücke
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IQE004NE1LM7SCATMA1 IQE004NE1LM7SCATMA1 Infineon Technologies Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+1.39 EUR
Mindestbestellmenge: 6000 Stücke
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IQE004NE1LM7SCATMA1 IQE004NE1LM7SCATMA1 Infineon Technologies Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 7742 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.05 EUR
10+3.26 EUR
50+2.49 EUR
100+2.24 EUR
500+1.8 EUR
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IGC54T65R3QEX1SA1 IGC54T65R3QEX1SA1 Infineon Technologies Infineon-IGC54T65R3QE_L7584E-DS-v01_01-en.pdf?fileId=db3a30433b47825b013b6ae660a31d73 Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Produkt ist nicht verfügbar
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S29GL512S11TFI010 S29GL512S11TFI010 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
auf Bestellung 182 Stücke:
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10+24.28 EUR
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S29GL128P90FFIR20 S29GL128P90FFIR20 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 807 Stücke:
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50+10.91 EUR
180+10.42 EUR
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540+10.01 EUR
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ISC035N10NM5LFATMA1 Infineon Technologies Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Produkt ist nicht verfügbar
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REFICC80QSG84W3BPATOBO1 REFICC80QSG84W3BPATOBO1 Infineon Technologies Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
auf Bestellung 1 Stücke:
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CY7C652148-24LTXIT CY7C652148-24LTXIT Infineon Technologies Infineon-CY7C652148-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea27217302 Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 2210 Stücke:
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4+6.14 EUR
10+4.59 EUR
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100+3.8 EUR
250+3.59 EUR
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CY7C65223-24LTXIT CY7C65223-24LTXIT Infineon Technologies Infineon-CY7C65223-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea23ff72fe Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 3781 Stücke:
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4+5.53 EUR
10+4.15 EUR
25+3.81 EUR
100+3.42 EUR
250+3.24 EUR
500+3.13 EUR
1000+3.03 EUR
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CYT2B95BACQ0AZSGST CYT2B95BACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
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500+15.99 EUR
Mindestbestellmenge: 500 Stücke
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CYT2B95BACQ0AZSGST CYT2B95BACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+28.05 EUR
10+22.13 EUR
25+20.66 EUR
100+19.03 EUR
250+18.25 EUR
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CYT2B94CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+21.17 EUR
Mindestbestellmenge: 500 Stücke
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CYT2B94CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Cut Tape (CT)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+30.67 EUR
10+28.18 EUR
25+27.01 EUR
100+23.8 EUR
250+22.63 EUR
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CYT2B95CACQ0AZSGST CYT2B95CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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4DIR1421HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Number of Channels: 4
Pulse Width Distortion (Max): 15ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Supplier Device Package: PG-DSO-16
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Capacitive Coupling
Data Rate: 40Mbps
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
1500+3.19 EUR
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4DIR1421HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
Hersteller: Infineon Technologies
Description: DIGITAL ISOLATORS
Number of Channels: 4
Pulse Width Distortion (Max): 15ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Supplier Device Package: PG-DSO-16
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Capacitive Coupling
Data Rate: 40Mbps
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
3+7.14 EUR
10+5.05 EUR
100+4.13 EUR
500+3.49 EUR
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4DIR1400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR1400HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Number of Channels: 4
Pulse Width Distortion (Max): 3ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Supplier Device Package: PG-DSO-16-46
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Magnetic Coupling
Data Rate: 40Mbps
Voltage - Supply: 2.7V ~ 6.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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4DIR1400HXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxH_family-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01899cc3b5175436
4DIR1400HXUMA1
Hersteller: Infineon Technologies
Description: DGTL ISOLTR 5.7KV 4CH SPI 16SOIC
Number of Channels: 4
Pulse Width Distortion (Max): 3ns
Channel Type: Bidirectional
Isolated Power: No
Propagation Delay tpLH / tpHL (Max): 26ns, 26ns
Common Mode Transient Immunity (Min): 100kV/µs
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Supplier Device Package: PG-DSO-16-46
Inputs - Side 1/Side 2: 3/1
Voltage - Isolation: 5700Vrms
Technology: Magnetic Coupling
Data Rate: 40Mbps
Voltage - Supply: 2.7V ~ 6.5V
Operating Temperature: -40°C ~ 125°C
Type: SPI
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 237 Stücke:
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5+4.25 EUR
10+3.06 EUR
100+2.36 EUR
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KITXMC47RELAXV1TOBO1 Infineon-Board_User_Manual_XMC4700_XMC4800_Relax_Kit_Series-UserManual-v01_04-EN.pdf?fileId=5546d46250cc1fdf01513f8e052d07fc
KITXMC47RELAXV1TOBO1
Hersteller: Infineon Technologies
Description: RELAX KIT XMC4700 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4700
Platform: Relax Kit
auf Bestellung 52 Stücke:
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AnzahlPrivatkunde
1+72.13 EUR
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ISK024NE2LM5AUSA1 Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AUSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 1118 Stücke:
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AnzahlPrivatkunde
10+2.2 EUR
16+1.37 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
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ISK057N04LM6ATLA1 Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2
ISK057N04LM6ATLA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 64A 6VSON
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: USB Switch
Operating Temperature: -55°C ~ 155°C (TJ)
Rds On (Typ): 5.9mOhm (Max)
Input Type: Non-Inverting
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Voltage - Load: 40V
Voltage - Supply (Vcc/Vdd): Not Required
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Produkt ist nicht verfügbar
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ISK057N04LM6ATLA1 Infineon-ISK057N04LM6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8779172a0187e60fd63111b2
ISK057N04LM6ATLA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 64A 6VSON
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39.1W (Tc)
Rds On (Max) @ Id, Vgs: 5.75mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Typ): 5.9mOhm (Max)
Operating Temperature: -55°C ~ 155°C (TJ)
Switch Type: USB Switch
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: PG-VSON-6-1
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 40V
Input Type: Non-Inverting
Produkt ist nicht verfügbar
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ISK036N03LM5AUSA1 Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3
ISK036N03LM5AUSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-VSON-6-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISK036N03LM5AUSA1 Infineon-ISK036N03LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e438096b819e3
ISK036N03LM5AUSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Supplier Device Package: PG-VSON-6-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.79 EUR
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EVALBDPSDRIVERTOBO1 infineon-2edf7175f-datasheet-en.pdf
EVALBDPSDRIVERTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDF7175F
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDF7175F
Supplied Contents: Board(s)
Primary Attributes: 36V ~ 75V Operating Voltage
Embedded: Yes, MCU
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1+267.17 EUR
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CY7C1018DV33-10VXIT download
CY7C1018DV33-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1018DV33-10VXIT download
CY7C1018DV33-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1023 Stücke:
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4+6.26 EUR
10+5.62 EUR
25+5.53 EUR
50+5.51 EUR
100+4.93 EUR
250+4.76 EUR
500+4.75 EUR
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IDH05G120C5XKSA1 Infineon-IDH05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014ffffaf7604e24
IDH05G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 5A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
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3+8 EUR
50+4.03 EUR
100+3.64 EUR
500+2.98 EUR
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TT285N16KOFHPSA2 Infineon-TT285N16KOF-DS-v03_04-EN.pdf?fileId=db3a304412b407950112b42f7b4d4bc5
TT285N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 520A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 130°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 12500A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 285 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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1+327.19 EUR
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TT280N18SOFHPSA1 Infineon-TT280N18SOF-DS-v03_01-EN.pdf?fileId=5546d4625cc9456a015d06e50ebf7edb
TT280N18SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 520A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 520 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 280 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 130°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+210.4 EUR
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CG8425AA
Hersteller: Infineon Technologies
Description: ASYNC
Packaging: Tray
Produkt ist nicht verfügbar
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CG7781AA
Hersteller: Infineon Technologies
Description: ASYNC
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4124PVA-442Z Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4124PVA-442Z
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4124PVA-442ZT Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4124PVA-442ZT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4124LQS-S433
CY8C4124LQS-S433
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4124LQS-S433T
CY8C4124LQS-S433T
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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7GA6Y0205
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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792826-00
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CG8202AA
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
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CG8874AM
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD157B1W01005E6327XTSA1 Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3
ESD157B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD157B1W01005E6327XTSA1 Infineon-ESD157-B1-W01005-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea133f700a3
ESD157B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.6V SGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.17pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.6V (Typ)
Power - Peak Pulse: 7.2W
Power Line Protection: No
auf Bestellung 14099 Stücke:
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AnzahlPrivatkunde
72+0.3 EUR
117+0.18 EUR
166+0.13 EUR
191+0.11 EUR
500+0.08 EUR
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ESD156B1W0201E6327XTSA1 Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0
ESD156B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD156B1W0201E6327XTSA1 Infineon-ESD156-B1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185eea129d200a0
ESD156B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.19pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 2420 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
56+0.38 EUR
92+0.23 EUR
129+0.17 EUR
148+0.14 EUR
500+0.1 EUR
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ESD151B1W0201E6327XTSA1 Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743
ESD151B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD151B1W0201E6327XTSA1 Infineon-ESD151-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018c0fddfad27743
ESD151B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.08pF @ 10GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 3.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD155B2W0201E6327XTSA1 Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d
ESD155B2W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD155B2W0201E6327XTSA1 Infineon-ESD155-B2-W0201-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470185eea11ea9009d
ESD155B2W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 3.5V SGWLL31
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.18pF @ 10GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-3-1
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.9V
Voltage - Clamping (Max) @ Ipp: 3.5V (Typ)
Power - Peak Pulse: 7W
Power Line Protection: No
auf Bestellung 7877 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
48+0.44 EUR
80+0.26 EUR
112+0.19 EUR
128+0.17 EUR
500+0.12 EUR
Mindestbestellmenge: 48 Stücke
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CY7C1020D-10ZSXI download
CY7C1020D-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.83 EUR
10+10.81 EUR
25+10.6 EUR
40+10.52 EUR
135+9.45 EUR
270+9.41 EUR
Mindestbestellmenge: 2 Stücke
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AUIRLS3034-7TRL auirls3034-7p.pdf?fileId=5546d462533600a4015355bec2b41586
AUIRLS3034-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPZA65R018CFD7XKSA1 Infineon-IPZA65R018CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627572d8fd01758f0d89607bbf
IPZA65R018CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-3
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
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IPDQ65R017CFD7AXTMA1 Infineon-IPDQ65R017CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76d75333a8
IPDQ65R017CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 776 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35 EUR
10+27.86 EUR
25+26.07 EUR
100+24.36 EUR
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IPDQ65R029CFD7AXTMA1 Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab
IPDQ65R029CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 463W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPDQ65R029CFD7AXTMA1 Infineon-IPDQ65R029CFD7A-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186cb76e6ef33ab
IPDQ65R029CFD7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Power Dissipation (Max): 463W (Tc)
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.94 EUR
10+17.21 EUR
25+16.03 EUR
100+14.72 EUR
250+14.6 EUR
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IQE004NE1LM7CGATMA1 Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b
IQE004NE1LM7CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.39 EUR
Mindestbestellmenge: 5000 Stücke
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IQE004NE1LM7CGATMA1 Infineon-IQE004NE1LM7CG-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c205bf478b
IQE004NE1LM7CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 9667 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
10+3.22 EUR
50+2.46 EUR
100+2.21 EUR
500+1.77 EUR
Mindestbestellmenge: 5 Stücke
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IQE004NE1LM7ATMA1 Infineon-IQE004NE1LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c2139e478e
IQE004NE1LM7ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IQE004NE1LM7ATMA1 Infineon-IQE004NE1LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c2139e478e
IQE004NE1LM7ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-TSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 2027 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
10+3.22 EUR
50+2.46 EUR
100+2.21 EUR
500+1.77 EUR
Mindestbestellmenge: 5 Stücke
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IQE004NE1LM7CGSCATMA1 Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788
IQE004NE1LM7CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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IQE004NE1LM7CGSCATMA1 Infineon-IQE004NE1LM7CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae4c1f8664788
IQE004NE1LM7CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 5423 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.77 EUR
10+5.11 EUR
50+3.96 EUR
100+3.59 EUR
500+3.02 EUR
Mindestbestellmenge: 3 Stücke
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IQE004NE1LM7SCATMA1 Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0
IQE004NE1LM7SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6000+1.39 EUR
Mindestbestellmenge: 6000 Stücke
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IQE004NE1LM7SCATMA1 Infineon-IQE004NE1LM7SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8ada5435018ae246370f63e0
IQE004NE1LM7SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±7V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
auf Bestellung 7742 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.05 EUR
10+3.26 EUR
50+2.49 EUR
100+2.24 EUR
500+1.8 EUR
Mindestbestellmenge: 5 Stücke
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IGC54T65R3QEX1SA1 Infineon-IGC54T65R3QE_L7584E-DS-v01_01-en.pdf?fileId=db3a30433b47825b013b6ae660a31d73
IGC54T65R3QEX1SA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 100A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Produkt ist nicht verfügbar
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S29GL512S11TFI010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL512S11TFI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Verified
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+26.16 EUR
10+24.28 EUR
25+23.53 EUR
91+22.48 EUR
182+21.92 EUR
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S29GL128P90FFIR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FFIR20
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.38 EUR
10+11.52 EUR
25+11.17 EUR
50+10.91 EUR
180+10.42 EUR
360+10.16 EUR
540+10.01 EUR
Mindestbestellmenge: 2 Stücke
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ISC035N10NM5LFATMA1
Hersteller: Infineon Technologies
Description: OPTIMOSTM5LINEARFET100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 115µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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REFICC80QSG84W3BPATOBO1 Infineon-ICC80QSG-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180b1cf85f62eaa
REFICC80QSG84W3BPATOBO1
Hersteller: Infineon Technologies
Description: REF FOR POWER TOOL BATTERY CHARG
Packaging: Bulk
Function: Battery Charger
Type: Power Management
Utilized IC / Part: ICC80QSG, IPN70R450P7S
Supplied Contents: Board(s)
Primary Attributes: 110 ~ 230 VAC Input Voltage
Embedded: No
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+208.14 EUR
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CY7C652148-24LTXIT Infineon-CY7C652148-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea27217302
CY7C652148-24LTXIT
Hersteller: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 2210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.14 EUR
10+4.59 EUR
25+4.21 EUR
100+3.8 EUR
250+3.59 EUR
500+3.51 EUR
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CY7C65223-24LTXIT Infineon-CY7C65223-24LTXIT-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea23ff72fe
CY7C65223-24LTXIT
Hersteller: Infineon Technologies
Description: USB Full-Speed Peripherals
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Function: Bridge
Interface: GPIO, UART
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2V ~ 3.45V, 3.15V ~ 5.25V, 4.35V ~ 5.5V
Current - Supply: 20mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-QFN (4x4)
DigiKey Programmable: Not Verified
auf Bestellung 3781 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.53 EUR
10+4.15 EUR
25+3.81 EUR
100+3.42 EUR
250+3.24 EUR
500+3.13 EUR
1000+3.03 EUR
Mindestbestellmenge: 4 Stücke
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CYT2B95BACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95BACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+15.99 EUR
Mindestbestellmenge: 500 Stücke
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CYT2B95BACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95BACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.05 EUR
10+22.13 EUR
25+20.66 EUR
100+19.03 EUR
250+18.25 EUR
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CYT2B94CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+21.17 EUR
Mindestbestellmenge: 500 Stücke
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CYT2B94CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 80LQFP
Packaging: Cut Tape (CT)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.67 EUR
10+28.18 EUR
25+27.01 EUR
100+23.8 EUR
250+22.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2B95CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B95CACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 57x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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