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SPP80N04S2L-03 SPP80N04S2L-03 Infineon Technologies SP%28P%2CB%2980N04S2L-03.pdf Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 25 V
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IRFSL7537PBF IRFSL7537PBF Infineon Technologies irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb Description: MOSFET N-CH 60V 173A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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10+5.46 EUR
100+3.87 EUR
500+3.18 EUR
1000+2.99 EUR
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IRMCF188TY IRMCF188TY Infineon Technologies irmcf188.pdf?fileId=5546d462533600a4015356725530273b Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (12x12)
Motor Type - AC, DC: AC, Induction, Synchronous
Produkt ist nicht verfügbar
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CYUSB2304-68LTXIT CYUSB2304-68LTXIT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB2304-68LTXIT CYUSB2304-68LTXIT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 827 Stücke:
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3+9.7 EUR
10+7.41 EUR
25+6.84 EUR
100+6.21 EUR
250+5.91 EUR
500+5.72 EUR
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S80KS2564GACHA043 Infineon Technologies Infineon-S80KS2564_256_Mb_HYPERRAM_self-refresh_DRAM_PSRAM_HYPERBUS_Extended-IO_x16_interface_1-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876b49c0066e12 Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
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S80KS2564GACHA040 Infineon Technologies Infineon-S80KS2564_256_Mb_HYPERRAM_self-refresh_DRAM_PSRAM_HYPERBUS_Extended-IO_x16_interface_1-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876b49c0066e12 Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
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S80KS2564GACHB040 Infineon Technologies Infineon-S80KS2564_256_Mb_HYPERRAM_self-refresh_DRAM_PSRAM_HYPERBUS_Extended-IO_x16_interface_1-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876b49c0066e12 Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
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IRS2461SXUMA1 IRS2461SXUMA1 Infineon Technologies Infineon-IRS2461S-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b9095579b4ec0 Description: AUDIO IC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1041G-10ZSXI CY7C1041G-10ZSXI Infineon Technologies Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
auf Bestellung 1264 Stücke:
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2+14.93 EUR
10+13.26 EUR
25+12.64 EUR
40+12.33 EUR
135+11.58 EUR
270+11.16 EUR
540+10.77 EUR
945+10.46 EUR
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CY62177EV30LL-55ZXI CY62177EV30LL-55ZXI Infineon Technologies Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 32MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8, 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.7V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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CY62148G-45ZSXIT CY62148G-45ZSXIT Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXIT CY62148G-45ZSXIT Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1960 Stücke:
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3+10.14 EUR
10+9.44 EUR
25+9.15 EUR
50+8.94 EUR
100+8.72 EUR
250+8.45 EUR
500+8.23 EUR
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CY9BF124MPMC-GNE2 CY9BF124MPMC-GNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 60
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF122MPMC-GNE2 CY9BF122MPMC-GNE2 Infineon Technologies Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9 Description: IC MCU 32BIT 160KB FLASH 80LQFP
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 60
Supplier Device Package: 80-LQFP (12x12)
Produkt ist nicht verfügbar
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S25HL01GTDPMHA010 S25HL01GTDPMHA010 Infineon Technologies infineon-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 720 Stücke:
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1+37.39 EUR
10+34.64 EUR
25+33.56 EUR
50+32.74 EUR
240+30.92 EUR
480+30.14 EUR
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S25HL01GTFAMHA010 S25HL01GTFAMHA010 Infineon Technologies infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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1+38.39 EUR
10+35.58 EUR
25+34.47 EUR
50+33.63 EUR
240+31.76 EUR
480+30.95 EUR
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PEB2026TSV1.1 PEB2026TSV1.1 Infineon Technologies Description: ISDN POWER CONTROLLER
Packaging: Tube
auf Bestellung 602 Stücke:
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PEB2026T-PV1.1 PEB2026T-PV1.1 Infineon Technologies Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
auf Bestellung 6194 Stücke:
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PEB2026TPV1.1 PEB2026TPV1.1 Infineon Technologies Description: ISDN POWER CONTROLLER
Packaging: Bulk
auf Bestellung 217 Stücke:
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57+10.27 EUR
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PEB2070NV2.4GICC PEB2070NV2.4GICC Infineon Technologies SIEMS02119-1.pdf?t.download=true&u=5oefqw Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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PEB2070NV2.4 PEB2070NV2.4 Infineon Technologies SIEMS02119-1.pdf?t.download=true&u=5oefqw Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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PEB2026T-SV1.1 PEB2026T-SV1.1 Infineon Technologies Description: ISDN POWER CONTROLLER
Packaging: Tube
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CY90387SPMT-GS-373E1 CY90387SPMT-GS-373E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PVT212PBF PVT212PBF Infineon Technologies pvt212.pdf?fileId=5546d462533600a4015356841646295d Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
auf Bestellung 324 Stücke:
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1+37.47 EUR
10+33.38 EUR
25+31.87 EUR
50+30.77 EUR
100+29.71 EUR
250+28.38 EUR
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BGS18MA14E6327XTSA1 BGS18MA14E6327XTSA1 Infineon Technologies Infineon-BGS18MA14-DS-v02_04-EN.pdf?fileId=5546d46265e7dffd0165ed72330e6921 Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.6GHz ~ 3.8GHz
Isolation: 29dB
Supplier Device Package: PG-ATSLP-14-10
IIP3: 65dBm
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452+1.19 EUR
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IRS20955STRPBF IRS20955STRPBF Infineon Technologies IRS20955%28S%29PbF.pdf Description: IC LINE DRIVER 2-CH 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Number of Channels: 2
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8611200977 Infineon Technologies Description: INFINEON
Packaging: Bulk
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IRG4BC20KD-SPBF IRG4BC20KD-SPBF Infineon Technologies irg4bc20kd-spbf.pdf?fileId=5546d462533600a40153563f39562255 Description: IGBT 600V 16A 60W D2PAK
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
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CY7C60323-PVXC CY7C60323-PVXC Infineon Technologies CY7C603xx.pdf Description: IC MCU 8BIT 8KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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CY7C63823-SXC CY7C63823-SXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 24-SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-SOIC
DigiKey Programmable: Not Verified
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FP06R12W1T4B3BOMA1 FP06R12W1T4B3BOMA1 Infineon Technologies Infineon-FP06R12W1T4_B3-DS-v02_03-en_de.pdf?fileId=db3a30433ba77ced013bada6fc1e33b3 Description: IGBT MODULE 1200V 0 94W
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 94 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 12 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IRG4PSC71UDPBF IRG4PSC71UDPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 600V 85A SUPER-247
Power - Max: 350 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 340 nC
Test Condition: 480V, 60A, 5Ohm, 15V
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Td (on/off) @ 25°C: 90ns/245ns
Supplier Device Package: SUPER-247™ (TO-274AA)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Reverse Recovery Time (trr): 82 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
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IRGS4062DPBF IRGS4062DPBF Infineon Technologies IRGS%28SL%294062DPbF.pdf Description: IGBT TRENCH 600V 48A D2PAK
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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F435MR07W1D7S8B11ABPSA1 F435MR07W1D7S8B11ABPSA1 Infineon Technologies F4-35MR07W1D7S8_B11_A_Rev1.10_8-22-23.pdf Description: MOSFET 4N-CH 650V 35A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Current - Continuous Drain (Id) @ 25°C: 35A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IRS2113PBF IRS2113PBF Infineon Technologies irs2110.pdf?fileId=5546d462533600a40153567660ff27b0 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
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XMC1302T028X0200ABXUMA1 XMC1302T028X0200ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1302T028X0200ABXUMA1 XMC1302T028X0200ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1302T028X0064ABXUMA1 XMC1302T028X0064ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1302T028X0064ABXUMA1 XMC1302T028X0064ABXUMA1 Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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IRFB23N15DPBF IRFB23N15DPBF Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRFS23N15DTRLP IRFS23N15DTRLP Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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2EDN7523GXTMA1 2EDN7523GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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2EDN8524GXTMA1 2EDN8524GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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2EDN8524GXTMA1 2EDN8524GXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
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EVAL2500WPFCGANATOBO1 EVAL2500WPFCGANATOBO1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
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2EDN7434BXTSA1 Infineon Technologies Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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2EDN7434BXTSA1 Infineon Technologies Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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AUIRFB3806 AUIRFB3806 Infineon Technologies AUIRFB3806_Web.pdf Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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IRFB42N20DPBF IRFB42N20DPBF Infineon Technologies irfb42n20dpbf.pdf?fileId=5546d462533600a40153561606c81e27 Description: MOSFET N-CH 200V 44A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
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IRFB23N20DPBF IRFB23N20DPBF Infineon Technologies irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143 Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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BSM100GB60DLCHOSA1 BSM100GB60DLCHOSA1 Infineon Technologies Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4 Description: IGBT MOD 600V 130A 445W MOD
Current - Collector Cutoff (Max): 500 µA
Power - Max: 445 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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BSM100GB60DLCHOSA1 BSM100GB60DLCHOSA1 Infineon Technologies Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4 Description: IGBT MOD 600V 130A 445W MOD
Current - Collector Cutoff (Max): 500 µA
Power - Max: 445 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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BSM100GB170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 200A 960W
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 960 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 200 Stücke:
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3+243.47 EUR
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D1721NH90TAOSA1 D1721NH90TAOSA1 Infineon Technologies Infineon-D1721NH90T-DS-v04_00-DE.pdf?fileId=5546d46255dd933d0155fd86888d3ac4 Description: DIODE STANDARD 2160A BGD10026K1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Produkt ist nicht verfügbar
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DD340N18SHPSA1 DD340N18SHPSA1 Infineon Technologies DD340N18S.pdf Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
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IAUC120N06S5L011ATMA1 IAUC120N06S5L011ATMA1 Infineon Technologies Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 Infineon Technologies Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4447 Stücke:
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6+4.06 EUR
10+2.59 EUR
100+1.75 EUR
500+1.39 EUR
1000+1.27 EUR
2000+1.24 EUR
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IAUC120N06S5L022ATMA1 IAUC120N06S5L022ATMA1 Infineon Technologies Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5397 Stücke:
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5+4.99 EUR
10+3.2 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.63 EUR
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S25FL128SAGNFI011 S25FL128SAGNFI011 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
auf Bestellung 991 Stücke:
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4+6.06 EUR
10+5.65 EUR
25+5.49 EUR
82+5.27 EUR
164+5.15 EUR
328+5.02 EUR
574+4.93 EUR
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SPP80N04S2L-03 SP%28P%2CB%2980N04S2L-03.pdf
SPP80N04S2L-03
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 25 V
auf Bestellung 2920 Stücke:
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AnzahlPrivatkunde
173+3.19 EUR
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IRFSL7537PBF irfs7537pbf.pdf?fileId=5546d462533600a4015364c3ee2729cb
IRFSL7537PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 173A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 1000 Stücke:
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3+8.27 EUR
10+5.46 EUR
100+3.87 EUR
500+3.18 EUR
1000+2.99 EUR
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IRMCF188TY irmcf188.pdf?fileId=5546d462533600a4015356725530273b
IRMCF188TY
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-3.6V 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 3V ~ 3.6V
Applications: General Purpose
Technology: IGBT
Supplier Device Package: 64-LQFP (12x12)
Motor Type - AC, DC: AC, Induction, Synchronous
Produkt ist nicht verfügbar
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CYUSB2304-68LTXIT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB2304-68LTXIT
Hersteller: Infineon Technologies
Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB2304-68LTXIT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB2304-68LTXIT
Hersteller: Infineon Technologies
Description: IC USB 2.0 HUB 4-PORT 68QFN
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 10
DigiKey Programmable: Not Verified
auf Bestellung 827 Stücke:
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3+9.7 EUR
10+7.41 EUR
25+6.84 EUR
100+6.21 EUR
250+5.91 EUR
500+5.72 EUR
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S80KS2564GACHA043 Infineon-S80KS2564_256_Mb_HYPERRAM_self-refresh_DRAM_PSRAM_HYPERBUS_Extended-IO_x16_interface_1-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876b49c0066e12
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
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S80KS2564GACHA040 Infineon-S80KS2564_256_Mb_HYPERRAM_self-refresh_DRAM_PSRAM_HYPERBUS_Extended-IO_x16_interface_1-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876b49c0066e12
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
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S80KS2564GACHB040 Infineon-S80KS2564_256_Mb_HYPERRAM_self-refresh_DRAM_PSRAM_HYPERBUS_Extended-IO_x16_interface_1-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876b49c0066e12
Hersteller: Infineon Technologies
Description: IC PSRAM 256MBIT HYPERBUS 49FBGA
Packaging: Tray
Package / Case: 49-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: 49-FBGA (8x8)
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 16
Produkt ist nicht verfügbar
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IRS2461SXUMA1 Infineon-IRS2461S-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b9095579b4ec0
IRS2461SXUMA1
Hersteller: Infineon Technologies
Description: AUDIO IC
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1041G-10ZSXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
CY7C1041G-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
auf Bestellung 1264 Stücke:
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2+14.93 EUR
10+13.26 EUR
25+12.64 EUR
40+12.33 EUR
135+11.58 EUR
270+11.16 EUR
540+10.77 EUR
945+10.46 EUR
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CY62177EV30LL-55ZXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62177EV30LL-55ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 4M x 8, 2M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.7V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 32Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
auf Bestellung 232 Stücke:
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1+116.3 EUR
10+107.36 EUR
25+103.85 EUR
96+98.83 EUR
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CY62148G-45ZSXIT Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
1000+8.03 EUR
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CY62148G-45ZSXIT Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Cut Tape (CT)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1960 Stücke:
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AnzahlPrivatkunde
3+10.14 EUR
10+9.44 EUR
25+9.15 EUR
50+8.94 EUR
100+8.72 EUR
250+8.45 EUR
500+8.23 EUR
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CY9BF124MPMC-GNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF124MPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 60
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF122MPMC-GNE2 Infineon-CY9B120M_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edfa79064e9
CY9BF122MPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 80LQFP
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 26x12b SAR; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 60
Supplier Device Package: 80-LQFP (12x12)
Produkt ist nicht verfügbar
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S25HL01GTDPMHA010 infineon-512-mb-1-gb-semper-tm-flash-quad-spi-datasheet-en.pdf
S25HL01GTDPMHA010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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480+30.14 EUR
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S25HL01GTFAMHA010 infineon-s25hs256t-s25hs512t-s25hs01gt-s25hl256t-s25hl512t-s25hl01gt-256mb-512mb-1gb-semper-flash-with-quad-spi-datasheet-ja.pdf
S25HL01GTFAMHA010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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PEB2026TSV1.1
PEB2026TSV1.1
Hersteller: Infineon Technologies
Description: ISDN POWER CONTROLLER
Packaging: Tube
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68+8.57 EUR
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PEB2026T-PV1.1
PEB2026T-PV1.1
Hersteller: Infineon Technologies
Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
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PEB2026TPV1.1
PEB2026TPV1.1
Hersteller: Infineon Technologies
Description: ISDN POWER CONTROLLER
Packaging: Bulk
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PEB2070NV2.4GICC SIEMS02119-1.pdf?t.download=true&u=5oefqw
PEB2070NV2.4GICC
Hersteller: Infineon Technologies
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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PEB2070NV2.4 SIEMS02119-1.pdf?t.download=true&u=5oefqw
PEB2070NV2.4
Hersteller: Infineon Technologies
Description: ISDN COMMUNICATIONS CONTROLLER
Packaging: Bulk
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: ISDN
Interface: ISDN, Serial
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 8mA
Supplier Device Package: PG-LCC-28-R
Number of Circuits: 1
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PEB2026T-SV1.1
PEB2026T-SV1.1
Hersteller: Infineon Technologies
Description: ISDN POWER CONTROLLER
Packaging: Tube
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CY90387SPMT-GS-373E1 download
CY90387SPMT-GS-373E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PVT212PBF pvt212.pdf?fileId=5546d462533600a4015356841646295d
PVT212PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 550MA 0-150V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 550 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 150 V
On-State Resistance (Max): 750 mOhms
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1+37.47 EUR
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BGS18MA14E6327XTSA1 Infineon-BGS18MA14-DS-v02_04-EN.pdf?fileId=5546d46265e7dffd0165ed72330e6921
BGS18MA14E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SP8T 3.8GHZ ATSLP14
Packaging: Bulk
Package / Case: 14-UFQFN Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP8T
RF Type: LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.4V
Insertion Loss: 0.7dB
Frequency Range: 100MHz ~ 3.8GHz
Test Frequency: 3.6GHz ~ 3.8GHz
Isolation: 29dB
Supplier Device Package: PG-ATSLP-14-10
IIP3: 65dBm
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IRS20955STRPBF IRS20955%28S%29PbF.pdf
IRS20955STRPBF
Hersteller: Infineon Technologies
Description: IC LINE DRIVER 2-CH 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Line Driver
Interface: Analog
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 18V
Applications: Audio Systems
Supplier Device Package: 16-SOIC
Number of Channels: 2
Produkt ist nicht verfügbar
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8611200977
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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IRG4BC20KD-SPBF irg4bc20kd-spbf.pdf?fileId=5546d462533600a40153563f39562255
IRG4BC20KD-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 16A 60W D2PAK
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
Reverse Recovery Time (trr): 37 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 60 W
Current - Collector Pulsed (Icm): 32 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 16 A
Gate Charge: 34 nC
Test Condition: 480V, 9A, 50Ohm, 15V
Switching Energy: 340µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 54ns/180ns
Produkt ist nicht verfügbar
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CY7C60323-PVXC CY7C603xx.pdf
CY7C60323-PVXC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 28-SSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 3.6V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tube
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4+6.03 EUR
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1034+3.32 EUR
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CY7C63823-SXC download
CY7C63823-SXC
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 24-SOIC
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 24-SOIC
DigiKey Programmable: Not Verified
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82+7.31 EUR
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FP06R12W1T4B3BOMA1 Infineon-FP06R12W1T4_B3-DS-v02_03-en_de.pdf?fileId=db3a30433ba77ced013bada6fc1e33b3
FP06R12W1T4B3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 0 94W
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 94 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 12 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 6A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+74.52 EUR
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IRG4PSC71UDPBF fundamentals-of-power-semiconductors
IRG4PSC71UDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 85A SUPER-247
Power - Max: 350 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 85 A
Gate Charge: 340 nC
Test Condition: 480V, 60A, 5Ohm, 15V
Switching Energy: 3.26mJ (on), 2.27mJ (off)
Td (on/off) @ 25°C: 90ns/245ns
Supplier Device Package: SUPER-247™ (TO-274AA)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Reverse Recovery Time (trr): 82 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRGS4062DPBF IRGS%28SL%294062DPbF.pdf
IRGS4062DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A D2PAK
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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F435MR07W1D7S8B11ABPSA1 F4-35MR07W1D7S8_B11_A_Rev1.10_8-22-23.pdf
F435MR07W1D7S8B11ABPSA1
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 650V 35A MODULE
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4.45V @ 1.74mA
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Rds On (Max) @ Id, Vgs: 39.4mOhm @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 400V
Current - Continuous Drain (Id) @ 25°C: 35A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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1+114.45 EUR
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IRS2113PBF irs2110.pdf?fileId=5546d462533600a40153567660ff27b0
IRS2113PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1302T028X0200ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1302T028X0200ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 200KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
auf Bestellung 2975 Stücke:
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XMC1302T028X0064ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0064ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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3000+2.62 EUR
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XMC1302T028X0064ABXUMA1 Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T028X0064ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Number of I/O: 26
DigiKey Programmable: Not Verified
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5+5.02 EUR
10+3.75 EUR
50+3.24 EUR
100+3.07 EUR
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IRFB23N15DPBF irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140
IRFB23N15DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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IRFS23N15DTRLP irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140
IRFS23N15DTRLP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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2EDN7523GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN7523GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN8524GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN8524GXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524GXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-WSON-8-1
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.98V
Current - Peak Output (Source, Sink): 5A, 5A
DigiKey Programmable: Not Verified
auf Bestellung 1235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
15+1.4 EUR
25+1.27 EUR
100+1.12 EUR
250+1.05 EUR
500+1 EUR
1000+0.98 EUR
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EVAL2500WPFCGANATOBO1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_05-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
EVAL2500WPFCGANATOBO1
Hersteller: Infineon Technologies
Description: 2500W FULL BRIDGE TOTEM
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDN7524R
Supplied Contents: Board(s)
Primary Attributes: 2-Channel (Dual)
auf Bestellung 5 Stücke:
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AnzahlPrivatkunde
1+1017.27 EUR
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2EDN7434BXTSA1
Hersteller: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDN7434BXTSA1
Hersteller: Infineon Technologies
Description: DRIVER IC PG-SOT23-6
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFB3806 AUIRFB3806_Web.pdf
AUIRFB3806
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB42N20DPBF irfb42n20dpbf.pdf?fileId=5546d462533600a40153561606c81e27
IRFB42N20DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 44A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Produkt ist nicht verfügbar
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IRFB23N20DPBF irfs23n20dpbf.pdf?fileId=5546d462533600a40153563628372143
IRFB23N20DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
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BSM100GB60DLCHOSA1 Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4
BSM100GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 445W MOD
Current - Collector Cutoff (Max): 500 µA
Power - Max: 445 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+134.78 EUR
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BSM100GB60DLCHOSA1 Infineon-BSM100GB60DLC-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b4349b3960c4
BSM100GB60DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 130A 445W MOD
Current - Collector Cutoff (Max): 500 µA
Power - Max: 445 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 130 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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BSM100GB170DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 200A 960W
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 960 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Operating Temperature: -40°C ~ 125°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+243.47 EUR
Mindestbestellmenge: 3 Stücke
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D1721NH90TAOSA1 Infineon-D1721NH90T-DS-v04_00-DE.pdf?fileId=5546d46255dd933d0155fd86888d3ac4
D1721NH90TAOSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 2160A BGD10026K1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2160A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: 0°C ~ 140°C
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
Produkt ist nicht verfügbar
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DD340N18SHPSA1 DD340N18S.pdf
DD340N18SHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1800V 330A BGPB50SB
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 330A
Supplier Device Package: BG-PB50SB-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+184.56 EUR
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IAUC120N06S5L011ATMA1 Infineon-IAUC120N06S5L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1b680d712ef
IAUC120N06S5L011ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N032ATMA1 Infineon-IAUC120N06S5N032-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183a8692a6a2df6
IAUC120N06S5N032ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.23mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3446 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4447 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+2.59 EUR
100+1.75 EUR
500+1.39 EUR
1000+1.27 EUR
2000+1.24 EUR
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IAUC120N06S5L022ATMA1 Infineon-IAUC120N06S5L022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275d5cd0ef1
IAUC120N06S5L022ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5651 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5397 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.2 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.63 EUR
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S25FL128SAGNFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFI011
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O
Supplier Device Package: 8-WSON (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tube
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.06 EUR
10+5.65 EUR
25+5.49 EUR
82+5.27 EUR
164+5.15 EUR
328+5.02 EUR
574+4.93 EUR
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