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IRS2104PBF IRS2104PBF Infineon Technologies irs2104.pdf?fileId=5546d462533600a40153567633f727a1 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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10+2.03 EUR
50+1.74 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
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CY2304NZZXC-1 CY2304NZZXC-1 Infineon Technologies Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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IRL1404PBF IRL1404PBF Infineon Technologies irl1404pbf.pdf?fileId=5546d462533600a40153565b382824f0 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
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IRL1404SPBF IRL1404SPBF Infineon Technologies irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IRL1404ZSPBF IRL1404ZSPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
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PEF 22508 E V1.1-G Infineon Technologies PEF22508_Rev2.0.pdf Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: Line Interface Unit (LIU)
Interface: E1, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Current - Supply: 370mA
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 8
Power (Watts): 140 mW
Produkt ist nicht verfügbar
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IAUC50N08S5N102ATMA1 IAUC50N08S5N102ATMA1 Infineon Technologies Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
Qualification: AEC-Q101
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11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
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DDB2U50N08W1RB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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DDB2U50N08W1RB23BOMA1 Infineon Technologies DDB2U50N08W1R_B23_Rev02_2011-02-26.pdf Description: MOD DIODE BRIDGE EASY1B-2-1
Packaging: Tray
Produkt ist nicht verfügbar
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D650N08TXPSA1 D650N08TXPSA1 Infineon Technologies D650N.pdf Description: DIODE GEN PURP 800V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Produkt ist nicht verfügbar
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IPT65R155CFD7XTMA1 IPT65R155CFD7XTMA1 Infineon Technologies Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2000 Stücke:
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2000+2.11 EUR
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IPT65R155CFD7XTMA1 IPT65R155CFD7XTMA1 Infineon Technologies Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
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IPT65R125CFD7XTMA1 IPT65R125CFD7XTMA1 Infineon Technologies Infineon-IPT65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186794f0d9378b0 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
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IMI111T026HXUMA1 IMI111T026HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
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IMI111T026HXUMA1 IMI111T026HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
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10+9.36 EUR
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100+7.91 EUR
250+7.55 EUR
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IMI111T046HXUMA1 IMI111T046HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
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IMI111T046HXUMA1 IMI111T046HXUMA1 Infineon Technologies Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 964 Stücke:
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2+13.31 EUR
10+10.31 EUR
25+9.55 EUR
100+8.73 EUR
250+8.33 EUR
500+8.10 EUR
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IRS2548DSTRPBF IRS2548DSTRPBF Infineon Technologies irs2548dspbf.pdf?fileId=5546d462533600a40153567b17722830 Description: IC PFC CTRLR CCM 46.5KHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Frequency - Switching: 42.5kHz ~ 46.5kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 14-SOIC
Current - Startup: 250 µA
Produkt ist nicht verfügbar
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IRF7307QTRPBF IRF7307QTRPBF Infineon Technologies IRF7307QPbF.pdf Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY7C4142KV13-106FCXC CY7C4142KV13-106FCXC Infineon Technologies Infineon-CY7C4122KV13_CY7C4142KV13_144-Mbit_QDR-IV_XP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec47d3939f8 Description: IC SRAM 144MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.26V ~ 1.34V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 1.066 GHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21064SPBF IR21064SPBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISK024NE2LM5AUSA1 ISK024NE2LM5AUSA1 Infineon Technologies Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar
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TT61N16KOFHPSA1 TT61N16KOFHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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TT61N16KOFKHPSA1 Infineon Technologies TT61N.pdf Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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CY8C4147LQS-S263T CY8C4147LQS-S263T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S263T CY8C4147LQS-S263T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 768 Stücke:
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2+11.25 EUR
10+8.68 EUR
25+8.04 EUR
100+7.33 EUR
250+7.00 EUR
500+6.80 EUR
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IRS21844PBF IRS21844PBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLU2905ZPBF IRLU2905ZPBF Infineon Technologies irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c description Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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AUIRLU2905 AUIRLU2905 Infineon Technologies AUIRLR2905.pdf Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB45N06S4L08ATMA3 IPB45N06S4L08ATMA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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IPB45N06S4L08ATMA3 IPB45N06S4L08ATMA3 Infineon Technologies Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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IRFZ44NSPBF IRFZ44NSPBF Infineon Technologies irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f description Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IRFZ44NLPBF IRFZ44NLPBF Infineon Technologies irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f Description: MOSFET N-CH 55V 49A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 Infineon Technologies Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 Infineon Technologies Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4265 Stücke:
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10+3.95 EUR
25+3.62 EUR
100+3.25 EUR
250+3.08 EUR
500+2.98 EUR
1000+2.89 EUR
2500+2.80 EUR
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IQFH55N04NM6ATMA1 IQFH55N04NM6ATMA1 Infineon Technologies Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
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XMC4402F64F256BAXQMA1 XMC4402F64F256BAXQMA1 Infineon Technologies Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 31
DigiKey Programmable: Not Verified
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T2510N06TOFVTXPSA1 T2510N06TOFVTXPSA1 Infineon Technologies Infineon-T2510N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc20123f1833e6d4128 Description: SCR MODULE 600V 4900A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
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D5810N06TVFXPSA1 D5810N06TVFXPSA1 Infineon Technologies Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70 Description: DIODE GEN PURP 600V 5800A
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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D5810N06TVFXPSA1 D5810N06TVFXPSA1 Infineon Technologies Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70 Description: DIODE GEN PURP 600V 5800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
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AUIPS6011STRL AUIPS6011STRL Infineon Technologies AUIPS6011%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIPS6011S AUIPS6011S Infineon Technologies AUIPS6011%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IMT65R039M1HXUMA1 IMT65R039M1HXUMA1 Infineon Technologies Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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IMT65R039M1HXUMA1 IMT65R039M1HXUMA1 Infineon Technologies Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1706 Stücke:
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F3L225R07W2H3PB63BPSA1 F3L225R07W2H3PB63BPSA1 Infineon Technologies Infineon-F3L225R07W2H3P_B63-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f3405c1db5680 Description: MODULE IGBT 700V EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 85A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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S25FL128SDPBHBC03 S25FL128SDPBHBC03 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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BCR198B6327HTLA1 BCR198B6327HTLA1 Infineon Technologies bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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IAUA180N10S5N029AUMA1 IAUA180N10S5N029AUMA1 Infineon Technologies Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1926 Stücke:
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3+6.85 EUR
10+4.50 EUR
100+3.17 EUR
500+2.61 EUR
1000+2.43 EUR
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IRLU9343PBF IRLU9343PBF Infineon Technologies irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702 Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
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CY8C28452-24PVXI CY8C28452-24PVXI Infineon Technologies download Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2305CSXC-1 CY2305CSXC-1 Infineon Technologies Infineon-CY2305C_CY2309C_3.3_V_Zero_Delay_Clock_Buffer-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec649ec3c6d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2249 Stücke:
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78+6.49 EUR
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CY8CMBR2016-24LQXIT CY8CMBR2016-24LQXIT Infineon Technologies Infineon-CY8CMBR2016_CapSense_Express_16_Button_Matrix_Controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7ec1f3fd2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MBR 10 BUTTON 10 LED 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.3mA
Number of Inputs: Up to 16
Supplier Device Package: 48-QFN (6x6)
Proximity Detection: No
LED Driver Channels: Up to 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP086N10N3GXKSA1 IPP086N10N3GXKSA1 Infineon Technologies IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358 Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Produkt ist nicht verfügbar
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CY22393FXC CY22393FXC Infineon Technologies Infineon-CY22393_CY223931_CY22394_CY22395_THREE_PLL_SERIAL_PROGRAMMABLE_FLASH_PROGRAMMABLE_CLOCK_GENERATOR-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b89e3555&utm_source=cypress&utm_medium=referral&utm_campaign=20 Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
auf Bestellung 1108 Stücke:
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10+28.07 EUR
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S6J326CLSPSC20000 S6J326CLSPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
auf Bestellung 400 Stücke:
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1+55.02 EUR
10+44.88 EUR
40+43.22 EUR
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S6J328CLSPSC20000 S6J328CLSPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32BIT 2.0625MB 216TEQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
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1+58.03 EUR
10+45.99 EUR
40+41.90 EUR
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IRS2184STRPBF IRS2184STRPBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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2500+1.47 EUR
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IRS2184STRPBF IRS2184STRPBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 3502 Stücke:
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10+2.14 EUR
25+1.94 EUR
100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
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IRFZ44ESPBF IRFZ44ESPBF Infineon Technologies irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208 description Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Produkt ist nicht verfügbar
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TLE9350VSJXTMA1 TLE9350VSJXTMA1 Infineon Technologies Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259 Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+0.90 EUR
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IRS2104PBF irs2104.pdf?fileId=5546d462533600a40153567633f727a1
IRS2104PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 2130 Stücke:
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Anzahl Preis
7+2.78 EUR
10+2.03 EUR
50+1.74 EUR
100+1.65 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
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CY2304NZZXC-1 Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2304NZZXC-1
Hersteller: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 1407 Stücke:
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Anzahl Preis
2+16.51 EUR
10+12.96 EUR
25+12.07 EUR
162+10.90 EUR
Mindestbestellmenge: 2
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IRL1404PBF irl1404pbf.pdf?fileId=5546d462533600a40153565b382824f0
IRL1404PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
Produkt ist nicht verfügbar
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IRL1404SPBF irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2
IRL1404SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IRL1404ZSPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
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PEF 22508 E V1.1-G PEF22508_Rev2.0.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 256-LBGA
Packaging: Tray
Package / Case: 256-LBGA
Mounting Type: Surface Mount
Function: Line Interface Unit (LIU)
Interface: E1, J1, T1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V, 3.3V
Current - Supply: 370mA
Supplier Device Package: PG-LBGA-256-1
Number of Circuits: 8
Power (Watts): 140 mW
Produkt ist nicht verfügbar
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IAUC50N08S5N102ATMA1 Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208
IAUC50N08S5N102ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4216 Stücke:
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Anzahl Preis
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.81 EUR
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DDB2U50N08W1RB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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DDB2U50N08W1RB23BOMA1 DDB2U50N08W1R_B23_Rev02_2011-02-26.pdf
Hersteller: Infineon Technologies
Description: MOD DIODE BRIDGE EASY1B-2-1
Packaging: Tray
Produkt ist nicht verfügbar
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D650N08TXPSA1 D650N.pdf
D650N08TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 800V 650A
Packaging: Bulk
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 650A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Produkt ist nicht verfügbar
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IPT65R155CFD7XTMA1 Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3
IPT65R155CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.11 EUR
Mindestbestellmenge: 2000
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IPT65R155CFD7XTMA1 Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3
IPT65R155CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.30 EUR
10+4.13 EUR
100+2.89 EUR
500+2.58 EUR
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IPT65R125CFD7XTMA1 Infineon-IPT65R125CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186794f0d9378b0
IPT65R125CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
10+4.76 EUR
100+3.37 EUR
500+3.08 EUR
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IMI111T026HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T026HXUMA1
Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
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IMI111T026HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T026HXUMA1
Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 2A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.13 EUR
10+9.36 EUR
25+8.67 EUR
100+7.91 EUR
250+7.55 EUR
500+7.33 EUR
Mindestbestellmenge: 2
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IMI111T046HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T046HXUMA1
Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Tape & Reel (TR)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Produkt ist nicht verfügbar
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IMI111T046HXUMA1 Infineon-IMI111Tx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce56640182d5446f5a618b
IMI111T046HXUMA1
Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 22-SOIC (0.295", 7.50mm Width), 22 Leads
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 4A
Interface: Analog, PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 5.5V, 13.5V ~ 16.5V
Applications: Fan Motor Driver
Technology: IGBT
Voltage - Load: 600V
Supplier Device Package: PG-DSO-22-1
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.31 EUR
10+10.31 EUR
25+9.55 EUR
100+8.73 EUR
250+8.33 EUR
500+8.10 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRS2548DSTRPBF irs2548dspbf.pdf?fileId=5546d462533600a40153567b17722830
IRS2548DSTRPBF
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 46.5KHZ 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 11.5V ~ 16.6V
Frequency - Switching: 42.5kHz ~ 46.5kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 14-SOIC
Current - Startup: 250 µA
Produkt ist nicht verfügbar
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IRF7307QTRPBF IRF7307QPbF.pdf
IRF7307QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY7C4142KV13-106FCXC Infineon-CY7C4122KV13_CY7C4142KV13_144-Mbit_QDR-IV_XP_SRAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec47d3939f8
CY7C4142KV13-106FCXC
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.26V ~ 1.34V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 1.066 GHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21064SPBF ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR21064SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISK024NE2LM5AUSA1 Infineon-ISK024NE2LM5-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ddc01d7017e4377702619e0
ISK024NE2LM5AUSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 103A (Tc)
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Supplier Device Package: PG-VSON-6-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar
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TT61N16KOFHPSA1 TT61N.pdf
TT61N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+194.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TT61N16KOFKHPSA1 TT61N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Common Cathode - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1550A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 76 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4147LQS-S263T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147LQS-S263T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.25 EUR
10+8.68 EUR
25+8.04 EUR
100+7.33 EUR
250+7.00 EUR
500+6.80 EUR
Mindestbestellmenge: 2
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IRS21844PBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS21844PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLU2905ZPBF description irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLU2905ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRLU2905 AUIRLR2905.pdf
AUIRLU2905
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB45N06S4L08ATMA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPB45N06S4L08ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.12 EUR
Mindestbestellmenge: 1000
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IPB45N06S4L08ATMA3 Infineon-IPP_B_I45N06S4L_08-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038fbf79a0d1c
IPB45N06S4L08ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
auf Bestellung 2986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.26 EUR
100+1.54 EUR
500+1.22 EUR
Mindestbestellmenge: 5
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IRFZ44NSPBF description irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f
IRFZ44NSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Produkt ist nicht verfügbar
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IRFZ44NLPBF irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f
IRFZ44NLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Produkt ist nicht verfügbar
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IQD005N04NM6CGATMA1 Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533
IQD005N04NM6CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQD005N04NM6CGATMA1 Infineon-IQD005N04NM6CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8c9f7b0533
IQD005N04NM6CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 610A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.28 EUR
10+3.95 EUR
25+3.62 EUR
100+3.25 EUR
250+3.08 EUR
500+2.98 EUR
1000+2.89 EUR
2500+2.80 EUR
Mindestbestellmenge: 4
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IQFH55N04NM6ATMA1 Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d
IQFH55N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.05 EUR
Mindestbestellmenge: 3000
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XMC4402F64F256BAXQMA1 Infineon-XMC4400-DS-v01_03-EN.pdf?fileId=5546d462696dbf12016981795855391d
XMC4402F64F256BAXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 80K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 14x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-25
Number of I/O: 31
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.45 EUR
10+10.49 EUR
25+9.75 EUR
160+9.27 EUR
Mindestbestellmenge: 2
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T2510N06TOFVTXPSA1 Infineon-T2510N-DS-v03_00-en_de.pdf?fileId=db3a304323b87bc20123f1833e6d4128
T2510N06TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 600V 4900A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 46000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2510 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 4900 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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D5810N06TVFXPSA1 Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70
D5810N06TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 5800A
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+601.23 EUR
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D5810N06TVFXPSA1 Infineon-D5810N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffe7cca55c70
D5810N06TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 5800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5800A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Produkt ist nicht verfügbar
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AUIPS6011STRL AUIPS6011%28S%2CR%29.pdf
AUIPS6011STRL
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIPS6011S AUIPS6011%28S%2CR%29.pdf
AUIPS6011S
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 11mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.3A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
IMT65R039M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
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IMT65R039M1HXUMA1 Infineon-IMT65R039M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c872bd8d601876f4b481471c1
IMT65R039M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 1706 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.30 EUR
10+11.94 EUR
100+8.92 EUR
500+8.35 EUR
Mindestbestellmenge: 2
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F3L225R07W2H3PB63BPSA1 Infineon-F3L225R07W2H3P_B63-DS-v03_00-EN.pdf?fileId=5546d4625f2e26bc015f3405c1db5680
F3L225R07W2H3PB63BPSA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 700V EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 85A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.50 EUR
18+80.46 EUR
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S25FL128SDPBHBC03 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPBHBC03
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR198B6327HTLA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
BCR198B6327HTLA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
IAUA180N10S5N029AUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-5
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tj)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 90A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-5-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7673 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.85 EUR
10+4.50 EUR
100+3.17 EUR
500+2.61 EUR
1000+2.43 EUR
Mindestbestellmenge: 3
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IRLU9343PBF irlr9343pbf.pdf?fileId=5546d462533600a401535671a5722702
IRLU9343PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 20A I-PAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Produkt ist nicht verfügbar
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CY8C28452-24PVXI download
CY8C28452-24PVXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, IrDA, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2305CSXC-1 Infineon-CY2305C_CY2309C_3.3_V_Zero_Delay_Clock_Buffer-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec649ec3c6d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2305CSXC-1
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2249 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
78+6.49 EUR
Mindestbestellmenge: 78
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CY8CMBR2016-24LQXIT Infineon-CY8CMBR2016_CapSense_Express_16_Button_Matrix_Controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec7ec1f3fd2&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8CMBR2016-24LQXIT
Hersteller: Infineon Technologies
Description: IC MBR 10 BUTTON 10 LED 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Current - Supply: 3.3mA
Number of Inputs: Up to 16
Supplier Device Package: 48-QFN (6x6)
Proximity Detection: No
LED Driver Channels: Up to 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP086N10N3GXKSA1 IPP086N10N3+G_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1ac5c8fa1358
IPP086N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 73A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 75µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
Produkt ist nicht verfügbar
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CY22393FXC Infineon-CY22393_CY223931_CY22394_CY22395_THREE_PLL_SERIAL_PROGRAMMABLE_FLASH_PROGRAMMABLE_CLOCK_GENERATOR-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0b89e3555&utm_source=cypress&utm_medium=referral&utm_campaign=20
CY22393FXC
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
auf Bestellung 1108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.87 EUR
10+28.07 EUR
96+24.83 EUR
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S6J326CLSPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J326CLSPSC20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+55.02 EUR
10+44.88 EUR
40+43.22 EUR
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S6J328CLSPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
S6J328CLSPSC20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.0625MB 216TEQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.03 EUR
10+45.99 EUR
40+41.90 EUR
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IRS2184STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.47 EUR
Mindestbestellmenge: 2500
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IRS2184STRPBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 3502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.90 EUR
10+2.14 EUR
25+1.94 EUR
100+1.73 EUR
250+1.63 EUR
500+1.57 EUR
1000+1.52 EUR
Mindestbestellmenge: 7
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IRFZ44ESPBF description irfz44espbf.pdf?fileId=5546d462533600a40153563b2c662208
IRFZ44ESPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 48A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
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TLE9350VSJXTMA1 Infineon-TLE9350VSJ-DataSheet-v01_10-EN.pdf?fileId=5546d46276c4f5350176f6eebccb1259
TLE9350VSJXTMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.90 EUR
Mindestbestellmenge: 2500
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