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F417MR12W1M1HB76BPSA1 F417MR12W1M1HB76BPSA1 Infineon Technologies F4-17MR12W1M1H_B76_Rev0.20_9-9-22.pdf Description: LOW POWER EASY
Packaging: Tray
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F433MR12W1M1HB76BPSA1 F433MR12W1M1HB76BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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FS28MR12W1M1HB70BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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F417MR12W1M1HPB76BPSA1 F417MR12W1M1HPB76BPSA1 Infineon Technologies F4-17MR12W1M1HP_B76_Rev0.10_9-9-22.pdf Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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FF8MR12W1M1HB70BPSA1 FF8MR12W1M1HB70BPSA1 Infineon Technologies Infineon-FF8MR12W1M1H_B70-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b728bcf5a7c92 Description: MOSFET
Packaging: Tray
Produkt ist nicht verfügbar
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F417MR12W1M1HB70BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 Infineon Technologies Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
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FS45MR12W1M1PB11BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
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CYT2B97CABQ0AZEGS Infineon Technologies Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
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TLI493DW2BWA2XTSA1 TLI493DW2BWA2XTSA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
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TLI493DW2BWA2XTSA1 TLI493DW2BWA2XTSA1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
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9+2.45 EUR
10+2.15 EUR
11+2.05 EUR
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500+1.59 EUR
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TLF44773LAXUMA1 Infineon Technologies Infineon-TLF4477-3LA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187a11ba6890960 Description: OPTIREG LINEAR PG-TSON-14
Packaging: Cut Tape (CT)
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4+5.38 EUR
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25+4.57 EUR
100+3.96 EUR
250+3.76 EUR
500+3.37 EUR
1000+2.84 EUR
2500+2.7 EUR
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S29GL256S10FHIV20 S29GL256S10FHIV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
auf Bestellung 1223 Stücke:
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50+17.85 EUR
180+17.05 EUR
360+16.62 EUR
540+16.37 EUR
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S29GL256S10DHIV20 S29GL256S10DHIV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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10+18.86 EUR
25+18.28 EUR
50+17.85 EUR
100+17.41 EUR
260+16.81 EUR
520+16.4 EUR
1040+15.98 EUR
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CY8C24123A-24PXI CY8C24123A-24PXI Infineon Technologies Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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D8320N06TVFXPSA1 D8320N06TVFXPSA1 Infineon Technologies Infineon-D8320N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffeadc375c8b Description: DIODE STANDARD 600V 8320A
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8320A
Operating Temperature - Junction: -25°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Produkt ist nicht verfügbar
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S29JL032J70TFI313 S29JL032J70TFI313 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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S29JL032J70TFI313 S29JL032J70TFI313 Infineon Technologies Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021 Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
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3+8.48 EUR
10+7.89 EUR
25+7.66 EUR
50+7.49 EUR
100+7.31 EUR
250+7.07 EUR
500+6.89 EUR
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CYT2B64BADQ0AZSGS CYT2B64BADQ0AZSGS Infineon Technologies Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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CYT2B64BADQ0AZEGS Infineon Technologies Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
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CYT2B63CADQ0AZSGS CYT2B63CADQ0AZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
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IR2235STRPBF IR2235STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR2235STRPBF IR2235STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 922 Stücke:
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2+15.54 EUR
10+12.04 EUR
25+11.16 EUR
100+10.21 EUR
250+9.97 EUR
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S25FL128LAGMFB013 S25FL128LAGMFB013 Infineon Technologies S25FL.pdf Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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S25FL128LAGMFB013 S25FL128LAGMFB013 Infineon Technologies S25FL.pdf Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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50+5.31 EUR
100+5.19 EUR
250+5.02 EUR
500+4.9 EUR
1000+4.78 EUR
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CYPD6125-40LQXIT CYPD6125-40LQXIT Infineon Technologies infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
Produkt ist nicht verfügbar
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CYPD6125-40LQXIT CYPD6125-40LQXIT Infineon Technologies infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
auf Bestellung 737 Stücke:
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10+8.98 EUR
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KITXMC12BOOT001TOBO1 KITXMC12BOOT001TOBO1 Infineon Technologies Board_Users_Manual_XMC1200_CPU_Card_R2.pdf?folderId=db3a304334fac4c601350a01037e11d2&fileId=db3a30433da5396c013da5c4fc22008f&ack=t Description: BOOT KIT XMC1200 EVAL BRD
Packaging: Tray
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1200
Platform: Boot Kit
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BC817-16W BC817-16W Infineon Technologies PIRSS13150-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
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1EDN9550BXTSA1 1EDN9550BXTSA1 Infineon Technologies Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
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1EDN9550BXTSA1 1EDN9550BXTSA1 Infineon Technologies Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
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EUFDZ0332-CY Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD251B1W0201E6327XTSA1 ESD251B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD251-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb942cee55496 Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 30pF @ 1GHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.6V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
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BGA7P320E6327XTSA1 BGA7P320E6327XTSA1 Infineon Technologies Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423 Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
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BGA7P220E6327XTSA1 BGA7P220E6327XTSA1 Infineon Technologies Infineon-BGA7P220-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bfa47efd1402 Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.5dBm
Test Frequency: 2.3GHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-16-12
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PEF 3304 EL V2.1-G Infineon Technologies PEB%2C%20PEF%2033xx.pdf Description: IC TELECOM INTERFACE 144LBGA
Packaging: Tray
Package / Case: 144-LBGA
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: JTAG, PCM, SCI/SPI
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LBGA-144
Number of Circuits: 4
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CY3677 CY3677 Infineon Technologies Infineon-CY29430_HIGH-PERFORMANCE_CLOCK_SYNTHESIZER-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1935767a0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EVAL FOR CY29430
Packaging: Box
Function: Clock Oscillation
Type: Timing
Utilized IC / Part: CY29430
Supplied Contents: Board(s)
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CY7C109D-10ZXI CY7C109D-10ZXI Infineon Technologies download description Description: IC SRAM 1MBIT PARALLEL 32TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
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CY7C109D-10VXI CY7C109D-10VXI Infineon Technologies download description Description: IC SRAM 1MBIT PARALLEL 32SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
DigiKey Programmable: Not Verified
Access Time: 10 ns
Memory Interface: Parallel
Packaging: Tube
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Organization: 128K x 8
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CY7C109D-10ZXIT CY7C109D-10ZXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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CY7C109D-10ZXIT CY7C109D-10ZXIT Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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T420N14TOFXPSA1 T420N14TOFXPSA1 Infineon Technologies Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339 Description: SCR MODULE 1800V 750A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 424 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 750 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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BAW156 BAW156 Infineon Technologies INFNS10821-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAW56UE6433HTMA1 BAW56UE6433HTMA1 Infineon Technologies baw56series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c24a4a80438 Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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DD250S65K3NOSA1 DD250S65K3NOSA1 Infineon Technologies Infineon-DD250S65K3-DS-v03_00-en_de.pdf?fileId=db3a3043382e83730138959dab2a168b Description: DIODE MODULE GP 6500V AIHV130-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 250 A
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DD500S65K3NOSA1 DD500S65K3NOSA1 Infineon Technologies Infineon-DD500S65K3-DS-v03_01-en_de.pdf?fileId=5546d461464245d30146ae11c38900da Description: DIODE MOD GP 6500V AIHV130-6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 A
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DD500S65K3NOSA1 DD500S65K3NOSA1 Infineon Technologies Infineon-DD500S65K3-DS-v03_01-en_de.pdf?fileId=5546d461464245d30146ae11c38900da Description: DIODE MOD GP 6500V AIHV130-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 A
Produkt ist nicht verfügbar
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DD750S65K3NOSA1 DD750S65K3NOSA1 Infineon Technologies Infineon-DD750S65K3-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea03876d5624 Description: DIODE MODULE GP 6500V AIHV130-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 750 A
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CY14B512Q2A-SXIT CY14B512Q2A-SXIT Infineon Technologies Infineon-CY14C512Q_CY14B512Q_CY14E512Q_512_KBIT_(64K_X_8)_SPI_NVSRAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0075c348e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 512KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
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CY90347ESPMC-GS-512-ERE2 CY90347ESPMC-GS-512-ERE2 Infineon Technologies Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90351ESPMC-GS-236E1 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F345CESPMC-GE1 CY90F345CESPMC-GE1 Infineon Technologies Description: IC MCU 16BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T11TFV020 S29GL512T11TFV020 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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2+20.86 EUR
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S29GL512T11TFIV33 S29GL512T11TFIV33 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL512T11TFIV13 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 512MBIT CFI 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T11TFIV30 S29GL512T11TFIV30 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 910 Stücke
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S29GL512T11TFB023 S29GL512T11TFB023 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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S29GL01GT11TFIV33 S29GL01GT11TFIV33 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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S29GL01GT11TFIV13 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT CFI 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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S29GL512T11TFB010 S29GL512T11TFB010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 910 Stücke
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F417MR12W1M1HB76BPSA1 F4-17MR12W1M1H_B76_Rev0.20_9-9-22.pdf
F417MR12W1M1HB76BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+187.72 EUR
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F433MR12W1M1HB76BPSA1
F433MR12W1M1HB76BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+185.49 EUR
24+169.33 EUR
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FS28MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+210.15 EUR
24+168.84 EUR
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F417MR12W1M1HPB76BPSA1 F4-17MR12W1M1HP_B76_Rev0.10_9-9-22.pdf
F417MR12W1M1HPB76BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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1+178.25 EUR
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FF8MR12W1M1HB70BPSA1 Infineon-FF8MR12W1M1H_B70-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8b6555fe018b728bcf5a7c92
FF8MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tray
Produkt ist nicht verfügbar
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F417MR12W1M1HB70BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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FF45MR12W1M1B11BOMA1 Infineon-FF45MR12W1M1_B11-DS-v02_00-EN.pdf?fileId=5546d46266f85d6301670c714a15315c
FF45MR12W1M1B11BOMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1BM-2
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+122.43 EUR
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FS45MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY1BM-2
Packaging: Tray
Produkt ist nicht verfügbar
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CYT2B97CABQ0AZEGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
Produkt ist nicht verfügbar
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TLI493DW2BWA2XTSA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA2XTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
Produkt ist nicht verfügbar
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TLI493DW2BWA2XTSA1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
TLI493DW2BWA2XTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C 5-WLCSP
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Output Type: I2C
Polarization: South Pole
Mounting Type: Surface Mount
Function: Special Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 3.5V
Technology: Hall Effect
Sensing Range: ±160mT
Current - Supply (Max): 130nA
Supplier Device Package: 5-WLCSP (1.13x0.93)
Test Condition: 25°C
auf Bestellung 3598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
10+2.15 EUR
11+2.05 EUR
25+1.92 EUR
50+1.83 EUR
100+1.75 EUR
500+1.59 EUR
1000+1.54 EUR
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TLF44773LAXUMA1 Infineon-TLF4477-3LA-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a0187a11ba6890960
Hersteller: Infineon Technologies
Description: OPTIREG LINEAR PG-TSON-14
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
4+5.38 EUR
10+4.83 EUR
25+4.57 EUR
100+3.96 EUR
250+3.76 EUR
500+3.37 EUR
1000+2.84 EUR
2500+2.7 EUR
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S29GL256S10FHIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10FHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Verified
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.29 EUR
10+18.86 EUR
25+18.28 EUR
50+17.85 EUR
180+17.05 EUR
360+16.62 EUR
540+16.37 EUR
1080+15.96 EUR
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S29GL256S10DHIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S10DHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1206 Stücke:
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AnzahlPrivatkunde
2+20.29 EUR
10+18.86 EUR
25+18.28 EUR
50+17.85 EUR
100+17.41 EUR
260+16.81 EUR
520+16.4 EUR
1040+15.98 EUR
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CY8C24123A-24PXI Infineon-CY8C24123A_CY8C24223A_CY8C24423A_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec6aaf93d0f
CY8C24123A-24PXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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D8320N06TVFXPSA1 Infineon-D8320N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffeadc375c8b
D8320N06TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 600V 8320A
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8320A
Operating Temperature - Junction: -25°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Produkt ist nicht verfügbar
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S29JL032J70TFI313 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI313
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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S29JL032J70TFI313 Infineon-S29JL032J_32_Mb_(4M_X_8_BIT_2M_X_16_BIT)_3_V_SIMULTANEOUS_READ_WRITE_FLASH-AdditionalTechnicalInformation-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed71e7d5831&utm_source=cypress&utm_medium=referral&utm_campaign=2021
S29JL032J70TFI313
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48TSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-TSOP
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.48 EUR
10+7.89 EUR
25+7.66 EUR
50+7.49 EUR
100+7.31 EUR
250+7.07 EUR
500+6.89 EUR
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CYT2B64BADQ0AZSGS Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd
CYT2B64BADQ0AZSGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT2B64BADQ0AZEGS Infineon-CYT2B6_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_Traveo_II_Family-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd02695258fd
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 28x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LVD, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT2B63CADQ0AZSGS Infineon-TRAVEO_T2G_CYT2B6_Series-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd0180d1dabfe2770b
CYT2B63CADQ0AZSGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 22x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 49
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2235STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2235STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2235STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 922 Stücke:
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2+15.54 EUR
10+12.04 EUR
25+11.16 EUR
100+10.21 EUR
250+9.97 EUR
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S25FL128LAGMFB013 S25FL.pdf
S25FL128LAGMFB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL128LAGMFB013 S25FL.pdf
S25FL128LAGMFB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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4+5.99 EUR
10+5.59 EUR
25+5.44 EUR
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100+5.19 EUR
250+5.02 EUR
500+4.9 EUR
1000+4.78 EUR
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CYPD6125-40LQXIT infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf
CYPD6125-40LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
Produkt ist nicht verfügbar
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CYPD6125-40LQXIT infineon-ez-pd-ccg6-usb-type-c-port-controller-datasheet-en.pdf
CYPD6125-40LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, SWD, UART
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 21.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
auf Bestellung 737 Stücke:
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2+11.69 EUR
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25+8.29 EUR
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250+7.21 EUR
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KITXMC12BOOT001TOBO1 Board_Users_Manual_XMC1200_CPU_Card_R2.pdf?folderId=db3a304334fac4c601350a01037e11d2&fileId=db3a30433da5396c013da5c4fc22008f&ack=t
KITXMC12BOOT001TOBO1
Hersteller: Infineon Technologies
Description: BOOT KIT XMC1200 EVAL BRD
Packaging: Tray
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1200
Platform: Boot Kit
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BC817-16W PIRSS13150-1.pdf?t.download=true&u=5oefqw
BC817-16W
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
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8955+0.055 EUR
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1EDN9550BXTSA1 Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e
1EDN9550BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDN9550BXTSA1 Infineon-1EDN9550B-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c7dbca96b017dbd1b161e061e
1EDN9550BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 400 V
Supplier Device Package: PG-SOT23-6
Rise / Fall Time (Typ): 1ns, 1ns
Channel Type: Single
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel), SiC MOSFET
Current - Peak Output (Source, Sink): 5.2A, 9.4A
DigiKey Programmable: Not Verified
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15+1.43 EUR
21+1.02 EUR
25+0.92 EUR
100+0.81 EUR
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500+0.71 EUR
1000+0.69 EUR
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EUFDZ0332-CY
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD251B1W0201E6327XTSA1 Infineon-ESD251-B1-W0201-DataSheet-v03_00-EN.pdf?fileId=5546d4626cb27db2016cb942cee55496
ESD251B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES SG-WLL-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 30pF @ 1GHz
Current - Peak Pulse (10/1000µs): 11A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 6.6V (Typ)
Power - Peak Pulse: 72W
Power Line Protection: No
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BGA7P320E6327XTSA1 Infineon-BGA7P320-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c88ae21230188bfb98e741423
BGA7P320E6327XTSA1
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.8dBm
Test Frequency: 3.3GHz ~ 4.2GHz
Supplier Device Package: PG-TSNP-16-12
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3+8.04 EUR
10+6.95 EUR
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1000+5.31 EUR
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BGA7P220E6327XTSA1 Infineon-BGA7P220-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bfa47efd1402
BGA7P220E6327XTSA1
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE PG-TSNP-
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 5G
Voltage - Supply: 3.15V ~ 3.45V
Gain: 34.4dB
Noise Figure: 3.5dB
P1dB: 27.5dBm
Test Frequency: 2.3GHz ~ 2.7GHz
Supplier Device Package: PG-TSNP-16-12
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3+8.04 EUR
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PEF 3304 EL V2.1-G PEB%2C%20PEF%2033xx.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 144LBGA
Packaging: Tray
Package / Case: 144-LBGA
Mounting Type: Surface Mount
Function: Analog Voice Access
Interface: JTAG, PCM, SCI/SPI
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: PG-LBGA-144
Number of Circuits: 4
Produkt ist nicht verfügbar
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CY3677 Infineon-CY29430_HIGH-PERFORMANCE_CLOCK_SYNTHESIZER-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1935767a0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY3677
Hersteller: Infineon Technologies
Description: EVAL FOR CY29430
Packaging: Box
Function: Clock Oscillation
Type: Timing
Utilized IC / Part: CY29430
Supplied Contents: Board(s)
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CY7C109D-10ZXI description download
CY7C109D-10ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 128K x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
auf Bestellung 2763 Stücke:
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5+5.11 EUR
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CY7C109D-10VXI description download
CY7C109D-10VXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
DigiKey Programmable: Not Verified
Access Time: 10 ns
Memory Interface: Parallel
Packaging: Tube
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 32-SOJ
Memory Organization: 128K x 8
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3+7.39 EUR
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CY7C109D-10ZXIT download
CY7C109D-10ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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1500+3.75 EUR
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CY7C109D-10ZXIT download
CY7C109D-10ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2980 Stücke:
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4+6.58 EUR
10+5.84 EUR
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500+4.77 EUR
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T420N14TOFXPSA1 Infineon-T420N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128637bdb055339
T420N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 750A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7200A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 424 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 750 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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BAW156 INFNS10821-1.pdf?t.download=true&u=5oefqw
BAW156
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 85V 140MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 140mA (DC)
Supplier Device Package: SOT23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 85 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 73017 Stücke:
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4948+0.11 EUR
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BAW56UE6433HTMA1 baw56series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c24a4a80438
BAW56UE6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Produkt ist nicht verfügbar
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DD250S65K3NOSA1 Infineon-DD250S65K3-DS-v03_00-en_de.pdf?fileId=db3a3043382e83730138959dab2a168b
DD250S65K3NOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 6500V AIHV130-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 250 A
Produkt ist nicht verfügbar
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DD500S65K3NOSA1 Infineon-DD500S65K3-DS-v03_01-en_de.pdf?fileId=5546d461464245d30146ae11c38900da
DD500S65K3NOSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 6500V AIHV130-6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 A
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1+3153.86 EUR
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DD500S65K3NOSA1 Infineon-DD500S65K3-DS-v03_01-en_de.pdf?fileId=5546d461464245d30146ae11c38900da
DD500S65K3NOSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 6500V AIHV130-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 A
Produkt ist nicht verfügbar
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DD750S65K3NOSA1 Infineon-DD750S65K3-DS-v03_00-en_de.pdf?fileId=db3a30432cd42ee3012cea03876d5624
DD750S65K3NOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 6500V AIHV130-6
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-6
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 750 A
Produkt ist nicht verfügbar
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CY14B512Q2A-SXIT Infineon-CY14C512Q_CY14B512Q_CY14E512Q_512_KBIT_(64K_X_8)_SPI_NVSRAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0075c348e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B512Q2A-SXIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 512KBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 40 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90347ESPMC-GS-512-ERE2
CY90347ESPMC-GS-512-ERE2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB MROM 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90351ESPMC-GS-236E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 15x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY90F345CESPMC-GE1
CY90F345CESPMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T11TFV020 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL512T11TFV020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.86 EUR
10+19.37 EUR
25+18.78 EUR
Mindestbestellmenge: 2 Stücke
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S29GL512T11TFIV33 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11TFIV33
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T11TFIV13 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT CFI 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T11TFIV30 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11TFIV30
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T11TFB023 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11TFB023
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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S29GL01GT11TFIV33 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT11TFIV33
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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S29GL01GT11TFIV13 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT CFI 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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S29GL512T11TFB010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11TFB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 910 Stücke
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