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XMC6511SCQ040XAAXUMA1 XMC6511SCQ040XAAXUMA1 Infineon Technologies Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40-17
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFR3710Z AUIRFR3710Z Infineon Technologies AUIRFR3710Z.pdf Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
Produkt ist nicht verfügbar
IR2111PBF IR2111PBF Infineon Technologies ir2111.pdf?fileId=5546d462533600a4015355c810e51682 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 8.3V, 12.6V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 3014 Stücke:
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100+ 4.16 EUR
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1000+ 2.98 EUR
2500+ 2.83 EUR
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IRG4PC30FDPBF IRG4PC30FDPBF Infineon Technologies irg4pc30fdpbf.pdf?fileId=5546d462533600a401535643bb0e22c0 description Description: IGBT 600V 31A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
AUIRFR8403TRLARMA1 Infineon Technologies Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO252-3-901|DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFR8401 AUIRFR8401 Infineon Technologies auirfr8401.pdf?fileId=5546d462533600a4015355b60157149f Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 60A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
BSZ0902NSIATMA1 BSZ0902NSIATMA1 Infineon Technologies BSZ0902NSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308e38cc9c33f9 Description: MOSFET N-CH 30V 21A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
CY7C433-20AXC CY7C433-20AXC Infineon Technologies CY7C4xx_RevB.pdf Description: IC FIFO ASYNC 4KX9 20NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 36K (4K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 20ns
Current - Supply (Max): 55mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRF2807ZSPBF IRF2807ZSPBF Infineon Technologies irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9 Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
IR2127PBF IR2127PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 description Description: IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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100+ 4.63 EUR
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500+ 3.94 EUR
1000+ 3.33 EUR
2500+ 3.16 EUR
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PVT312LSPBF PVT312LSPBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMT
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
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1000+ 6.77 EUR
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TLE4983CHTE8547HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
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10+ 7.92 EUR
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TLE4983CHTE8547HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Grade: Automotive
Qualification: AEC-Q100
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LITEDCDCSBCV33BOARDTOBO1 LITEDCDCSBCV33BOARDTOBO1 Infineon Technologies Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a Description: LITE DCDC SBC V33 BOARD
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9471-3ES
Supplied Contents: Board(s)
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REFBGT60LTR11AIPM0TOBO1 REFBGT60LTR11AIPM0TOBO1 Infineon Technologies Description: REFERENCE BOARD
Packaging: Bulk
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IRG4PC40WPBF IRG4PC40WPBF Infineon Technologies irg4pc40wpbf.pdf?fileId=5546d462533600a40153564440c522e2 description Description: IGBT 600V 40A 160W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
T1900N18TOFVTXPSA1 T1900N18TOFVTXPSA1 Infineon Technologies Infineon-T1900N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6d7ba7de3 Description: STD THYR/DIODEN DISC BG-T7526K-1
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1810 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2840 A
Voltage - Off State: 1.8 kV
auf Bestellung 1 Stücke:
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1+621 EUR
T390N14TOFXPSA1 T390N14TOFXPSA1 Infineon Technologies Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316 Description: SCR MODULE 1600V 600A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4900A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 381 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 600 A
Voltage - Off State: 1.6 kV
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T390N16TOFXPSA1 T390N16TOFXPSA1 Infineon Technologies Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316 Description: SCR MODULE 1600V 600A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4900A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 381 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 600 A
Voltage - Off State: 1.6 kV
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T470N16TOFXPSA1 T470N16TOFXPSA1 Infineon Technologies Infineon-T470N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286378ae6b532f Description: SCR MODULE 1600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 470 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
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1+188.23 EUR
18+ 174.25 EUR
IAUCN04S7N005ATMA1 IAUCN04S7N005ATMA1 Infineon Technologies Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7N005ATMA1 IAUCN04S7N005ATMA1 Infineon Technologies Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6698 Stücke:
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500+ 2.7 EUR
1000+ 2.29 EUR
2000+ 2.17 EUR
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IRGP4066-EPBF IRGP4066-EPBF Infineon Technologies IRGP4066(-E)PBF.pdf Description: IGBT 600V 140A 454W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
IRGP4066PBF IRGP4066PBF Infineon Technologies IRGP4066(-E)PBF.pdf Description: IGBT 600V 140A 454W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
IM393L6FXKLA1 Infineon Technologies Infineon-IM393-L6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b0683bb71b4 Description: CIPOS TINY
Packaging: Bulk
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
TC1784F320F180ELBAKXUMA1 Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TC1793F512F270EFABKXUMA2 TC1793F512F270EFABKXUMA2 Infineon Technologies Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TC1793F512F270EFABKXUMA2 TC1793F512F270EFABKXUMA2 Infineon Technologies Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Cut Tape (CT)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
auf Bestellung 355 Stücke:
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1+60.32 EUR
10+ 55.63 EUR
25+ 53.13 EUR
100+ 47.5 EUR
250+ 45.32 EUR
TC1798F512F300EPABKXUMA2 TC1798F512F300EPABKXUMA2 Infineon Technologies Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00 Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
500+44.2 EUR
Mindestbestellmenge: 500
TC1798F512F300EPABKXUMA2 TC1798F512F300EPABKXUMA2 Infineon Technologies Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00 Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Cut Tape (CT)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.49 EUR
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25+ 53.17 EUR
100+ 48.18 EUR
250+ 46.52 EUR
TC1793F512F270EFABKXUMA1 TC1793F512F270EFABKXUMA1 Infineon Technologies INFNS27999-1.pdf?t.download=true&u=5oefqw Description: TC1793 - RISC FLASH MICROCONTROL
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.17V ~ 1.43V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TC1782F320F180HLBAKXUMA1 Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYB06445LQI-S3D42 CYB06445LQI-S3D42 Infineon Technologies Infineon-PSOC_6_MCU_CYB06445LQI-S3D42-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017dfae769823afe Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.29 EUR
10+ 17.43 EUR
25+ 16.62 EUR
80+ 14.43 EUR
260+ 13.78 EUR
520+ 12.56 EUR
1040+ 10.94 EUR
CY8C614AAZI-S2F14 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.7 EUR
10+ 19.03 EUR
72+ 18.24 EUR
144+ 16.08 EUR
288+ 15.29 EUR
504+ 14.3 EUR
BCR 153T E6327 BCR 153T E6327 Infineon Technologies BCR153 Series.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
CY25100KZXC46 Infineon Technologies Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62 Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 5987 Stücke:
Lieferzeit 10-14 Tag (e)
48+10.29 EUR
Mindestbestellmenge: 48
C161PILF3VCABXUMA1 C161PILF3VCABXUMA1 Infineon Technologies c161pi_ds_199907.pdf_folderid=db3a304412b407950112b4391ae36c3b&fileid=db3a304412b407950112b4391b6f6c3c.pdf Description: SAB-C161PI - LEGACY 16-BIT MICRO
Packaging: Bulk
DigiKey Programmable: Not Verified
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Number of I/O: 76
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
25+20.43 EUR
Mindestbestellmenge: 25
S29GL512S10DHI010 S29GL512S10DHI010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 5491 Stücke:
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2+11.02 EUR
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IRFR120ZPBF IRFR120ZPBF Infineon Technologies irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050 Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
MC68HC705C8ACPB Infineon Technologies Description: MC68HC8-BMICROCONTROLLER
Packaging: Bulk
Produkt ist nicht verfügbar
IRL3715ZPBF IRL3715ZPBF Infineon Technologies IRL3715Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
TLE493DW2B6MS2GOTOBO1 TLE493DW2B6MS2GOTOBO1 Infineon Technologies Infineon-Infineon-3DMS2GO_TLE493D-W2B6-UM-v01_00-EN-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb016418342fea3f54 Description: 3D MAGNETIC SENSOR 2GO
Packaging: Bulk
Interface: I2C, Serial
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-W2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
1+45.14 EUR
IR2113PBF IR2113PBF Infineon Technologies Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 1593 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.04 EUR
10+ 5.43 EUR
25+ 5.14 EUR
100+ 4.45 EUR
250+ 4.22 EUR
500+ 3.79 EUR
1000+ 3.2 EUR
Mindestbestellmenge: 3
IRF7314PBF IRF7314PBF Infineon Technologies irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c description Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
CY8C20110-LDX2I CY8C20110-LDX2I Infineon Technologies download Description: IC CAPSENSE EXP 10 I/O 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 10
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPP023N10N5XKSA1 IPP023N10N5XKSA1 Infineon Technologies Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.75 EUR
50+ 8.53 EUR
100+ 7.31 EUR
Mindestbestellmenge: 2
S29GL128P90TFCR20 S29GL128P90TFCR20 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.28 EUR
10+ 10.3 EUR
25+ 10.11 EUR
40+ 10.03 EUR
80+ 9 EUR
230+ 8.97 EUR
Mindestbestellmenge: 2
S29GL128P90TFCR10 S29GL128P90TFCR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.25 EUR
10+ 10.27 EUR
25+ 10.08 EUR
40+ 10.01 EUR
91+ 8.98 EUR
Mindestbestellmenge: 2
IRF7820PBF IRF7820PBF Infineon Technologies irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00 Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Produkt ist nicht verfügbar
IRFSL7534PBF IRFSL7534PBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Produkt ist nicht verfügbar
IRF7473PBF IRF7473PBF Infineon Technologies irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20 Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
IRF8714TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IPF011N08NM6ATMA1 Infineon Technologies Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
AUIRF3710ZSTRL AUIRF3710ZSTRL Infineon Technologies Infineon-auirf3710z-DataSheet-v01_01-EN.pdf?fileId=5546d4626c1f3dc3016c4d844dab18b7 Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
IRPS5401MXI03TRP Infineon Technologies Infineon-Digital_voltage_regulator_PMIC_IRPS5401-PB-v01_01-EN.pdf?fileId=5546d46258fc0bc10159957c0dbf2313 Description: IC REG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IRPS5401MXI04TRPAUMA1 IRPS5401MXI04TRPAUMA1 Infineon Technologies Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db Description: IC REG ADJ 50A 5OUT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 5
Current - Output: 50A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Negative
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 12V
Supplier Device Package: 56-QFN (7x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.6V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.5V
Produkt ist nicht verfügbar
BGMC1210E6327XUMA1 Infineon Technologies Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
S2GOMEMSMICIM69DTOBO1 S2GOMEMSMICIM69DTOBO1 Infineon Technologies Infineon-IM69D130_Microphone_Shield2Go-GS-v01_00-EN.pdf?fileId=5546d462677d0f4601677f3486ed0941 Description: BOARD
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Platform: Shield2Go
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.25 EUR
IRF7389PBF IRF7389PBF Infineon Technologies irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90 description Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
TLE4984CHTE6747HAMA1 TLE4984CHTE6747HAMA1 Infineon Technologies TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
Produkt ist nicht verfügbar
XMC6511SCQ040XAAXUMA1 Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a
XMC6511SCQ040XAAXUMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM, UART
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3.3V ~ 5.5V
Controller Series: XMCxxxxSC
Program Memory Type: FLASH
Applications: Wireless Power Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-40-17
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
AUIRFR3710Z AUIRFR3710Z.pdf
AUIRFR3710Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
Produkt ist nicht verfügbar
IR2111PBF description ir2111.pdf?fileId=5546d462533600a4015355c810e51682
IR2111PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 8.3V, 12.6V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 3014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.65 EUR
10+ 5.07 EUR
50+ 4.8 EUR
100+ 4.16 EUR
250+ 3.94 EUR
500+ 3.54 EUR
1000+ 2.98 EUR
2500+ 2.83 EUR
Mindestbestellmenge: 4
IRG4PC30FDPBF description irg4pc30fdpbf.pdf?fileId=5546d462533600a401535643bb0e22c0
IRG4PC30FDPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 42ns/230ns
Switching Energy: 630µJ (on), 1.39mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
AUIRFR8403TRLARMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO252-3-901|DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Produkt ist nicht verfügbar
AUIRFR8401 auirfr8401.pdf?fileId=5546d462533600a4015355b60157149f
AUIRFR8401
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 60A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Produkt ist nicht verfügbar
BSZ0902NSIATMA1 BSZ0902NSI_Rev+2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433072cd8f01308e38cc9c33f9
BSZ0902NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
CY7C433-20AXC CY7C4xx_RevB.pdf
CY7C433-20AXC
Hersteller: Infineon Technologies
Description: IC FIFO ASYNC 4KX9 20NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 36K (4K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 20ns
Current - Supply (Max): 55mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IRF2807ZSPBF irf2807zpbf.pdf?fileId=5546d462533600a4015355debf4518f9
IRF2807ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 53A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
IR2127PBF description ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR2127PBF
Hersteller: Infineon Technologies
Description: IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 2878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.3 EUR
10+ 5.65 EUR
50+ 5.35 EUR
100+ 4.63 EUR
250+ 4.4 EUR
500+ 3.94 EUR
1000+ 3.33 EUR
2500+ 3.16 EUR
Mindestbestellmenge: 3
PVT312LSPBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312LSPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 6-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 170 mA
Supplier Device Package: 6-SMT
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 15 Ohms
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.62 EUR
10+ 10.89 EUR
25+ 9.68 EUR
50+ 9.19 EUR
100+ 8.71 EUR
250+ 7.74 EUR
500+ 7.26 EUR
1000+ 6.77 EUR
Mindestbestellmenge: 2
TLE4983CHTE8547HAMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Cut Tape (CT)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.56 EUR
10+ 7.92 EUR
25+ 7.04 EUR
50+ 6.69 EUR
100+ 6.51 EUR
500+ 5.46 EUR
Mindestbestellmenge: 2
TLE4983CHTE8547HAMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Packaging: Tape & Box (TB)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+5.11 EUR
Mindestbestellmenge: 1500
LITEDCDCSBCV33BOARDTOBO1 Infineon-Lite_SBC_Evaluation_Board-Getting_Started-UM-v01_00-EN.pdf?fileId=5546d46267c74c9a0167d02c0bcd1a6a
LITEDCDCSBCV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: LITE DCDC SBC V33 BOARD
Packaging: Box
Function: System Basis Chip (SBC)
Type: Interface
Utilized IC / Part: TLE9471-3ES
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+224.31 EUR
REFBGT60LTR11AIPM0TOBO1
REFBGT60LTR11AIPM0TOBO1
Hersteller: Infineon Technologies
Description: REFERENCE BOARD
Packaging: Bulk
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+314.58 EUR
IRG4PC40WPBF description irg4pc40wpbf.pdf?fileId=5546d462533600a40153564440c522e2
IRG4PC40WPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 40A 160W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
T1900N18TOFVTXPSA1 Infineon-T1900N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6d7ba7de3
T1900N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC BG-T7526K-1
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1810 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2840 A
Voltage - Off State: 1.8 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+621 EUR
T390N14TOFXPSA1 Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316
T390N14TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 600A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4900A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 381 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 600 A
Voltage - Off State: 1.6 kV
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+157.59 EUR
18+ 143.86 EUR
T390N16TOFXPSA1 Infineon-T390N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd80128636b9b085316
T390N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 600A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4900A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 381 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 600 A
Voltage - Off State: 1.6 kV
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+160.51 EUR
T470N16TOFXPSA1 Infineon-T470N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286378ae6b532f
T470N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 800A DO200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 470 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+188.23 EUR
18+ 174.25 EUR
IAUCN04S7N005ATMA1 Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb
IAUCN04S7N005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+2.09 EUR
Mindestbestellmenge: 5000
IAUCN04S7N005ATMA1 Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb
IAUCN04S7N005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.82 EUR
10+ 4.01 EUR
100+ 3.19 EUR
500+ 2.7 EUR
1000+ 2.29 EUR
2000+ 2.17 EUR
Mindestbestellmenge: 4
IRGP4066-EPBF IRGP4066(-E)PBF.pdf
IRGP4066-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 140A 454W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
IRGP4066PBF IRGP4066(-E)PBF.pdf
IRGP4066PBF
Hersteller: Infineon Technologies
Description: IGBT 600V 140A 454W TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
IM393L6FXKLA1 Infineon-IM393-L6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740b0683bb71b4
Hersteller: Infineon Technologies
Description: CIPOS TINY
Packaging: Bulk
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
TC1784F320F180ELBAKXUMA1
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TC1793F512F270EFABKXUMA2 Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b
TC1793F512F270EFABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TC1793F512F270EFABKXUMA2 Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b
TC1793F512F270EFABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Cut Tape (CT)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+60.32 EUR
10+ 55.63 EUR
25+ 53.13 EUR
100+ 47.5 EUR
250+ 45.32 EUR
TC1798F512F300EPABKXUMA2 Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00
TC1798F512F300EPABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
500+44.2 EUR
Mindestbestellmenge: 500
TC1798F512F300EPABKXUMA2 Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00
TC1798F512F300EPABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Cut Tape (CT)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+59.49 EUR
10+ 55.49 EUR
25+ 53.17 EUR
100+ 48.18 EUR
250+ 46.52 EUR
TC1793F512F270EFABKXUMA1 INFNS27999-1.pdf?t.download=true&u=5oefqw
TC1793F512F270EFABKXUMA1
Hersteller: Infineon Technologies
Description: TC1793 - RISC FLASH MICROCONTROL
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.17V ~ 1.43V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TC1782F320F180HLBAKXUMA1
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
CYB06445LQI-S3D42 Infineon-PSOC_6_MCU_CYB06445LQI-S3D42-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017dfae769823afe
CYB06445LQI-S3D42
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.29 EUR
10+ 17.43 EUR
25+ 16.62 EUR
80+ 14.43 EUR
260+ 13.78 EUR
520+ 12.56 EUR
1040+ 10.94 EUR
CY8C614AAZI-S2F14 Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+20.7 EUR
10+ 19.03 EUR
72+ 18.24 EUR
144+ 16.08 EUR
288+ 15.29 EUR
504+ 14.3 EUR
BCR 153T E6327 BCR153 Series.pdf
BCR 153T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
CY25100KZXC46 Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 5987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+10.29 EUR
Mindestbestellmenge: 48
C161PILF3VCABXUMA1 c161pi_ds_199907.pdf_folderid=db3a304412b407950112b4391ae36c3b&fileid=db3a304412b407950112b4391b6f6c3c.pdf
C161PILF3VCABXUMA1
Hersteller: Infineon Technologies
Description: SAB-C161PI - LEGACY 16-BIT MICRO
Packaging: Bulk
DigiKey Programmable: Not Verified
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Number of I/O: 76
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+20.43 EUR
Mindestbestellmenge: 25
S29GL512S10DHI010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S10DHI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 5491 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.02 EUR
10+ 10.46 EUR
Mindestbestellmenge: 2
IRFR120ZPBF irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050
IRFR120ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
MC68HC705C8ACPB
Hersteller: Infineon Technologies
Description: MC68HC8-BMICROCONTROLLER
Packaging: Bulk
Produkt ist nicht verfügbar
IRL3715ZPBF IRL3715Z(S,L)PbF.pdf
IRL3715ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
TLE493DW2B6MS2GOTOBO1 Infineon-Infineon-3DMS2GO_TLE493D-W2B6-UM-v01_00-EN-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb016418342fea3f54
TLE493DW2B6MS2GOTOBO1
Hersteller: Infineon Technologies
Description: 3D MAGNETIC SENSOR 2GO
Packaging: Bulk
Interface: I2C, Serial
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-W2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+45.14 EUR
IR2113PBF description Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801
IR2113PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 1593 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.04 EUR
10+ 5.43 EUR
25+ 5.14 EUR
100+ 4.45 EUR
250+ 4.22 EUR
500+ 3.79 EUR
1000+ 3.2 EUR
Mindestbestellmenge: 3
IRF7314PBF description irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c
IRF7314PBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
CY8C20110-LDX2I download
CY8C20110-LDX2I
Hersteller: Infineon Technologies
Description: IC CAPSENSE EXP 10 I/O 16QFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I²C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 10
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: No
LED Driver Channels: Up to 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IPP023N10N5XKSA1 Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494
IPP023N10N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.75 EUR
50+ 8.53 EUR
100+ 7.31 EUR
Mindestbestellmenge: 2
S29GL128P90TFCR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90TFCR20
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.28 EUR
10+ 10.3 EUR
25+ 10.11 EUR
40+ 10.03 EUR
80+ 9 EUR
230+ 8.97 EUR
Mindestbestellmenge: 2
S29GL128P90TFCR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90TFCR10
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.25 EUR
10+ 10.27 EUR
25+ 10.08 EUR
40+ 10.01 EUR
91+ 8.98 EUR
Mindestbestellmenge: 2
IRF7820PBF irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00
IRF7820PBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 200V 3.7A 8-SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Produkt ist nicht verfügbar
IRFSL7534PBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFSL7534PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Produkt ist nicht verfügbar
IRF7473PBF irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20
IRF7473PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
IRF8714TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IPF011N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
AUIRF3710ZSTRL Infineon-auirf3710z-DataSheet-v01_01-EN.pdf?fileId=5546d4626c1f3dc3016c4d844dab18b7
AUIRF3710ZSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
IRPS5401MXI03TRP Infineon-Digital_voltage_regulator_PMIC_IRPS5401-PB-v01_01-EN.pdf?fileId=5546d46258fc0bc10159957c0dbf2313
Hersteller: Infineon Technologies
Description: IC REG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
IRPS5401MXI04TRPAUMA1 Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db
IRPS5401MXI04TRPAUMA1
Hersteller: Infineon Technologies
Description: IC REG ADJ 50A 5OUT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 5
Current - Output: 50A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Negative
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 12V
Supplier Device Package: 56-QFN (7x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.6V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.5V
Produkt ist nicht verfügbar
BGMC1210E6327XUMA1
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
S2GOMEMSMICIM69DTOBO1 Infineon-IM69D130_Microphone_Shield2Go-GS-v01_00-EN.pdf?fileId=5546d462677d0f4601677f3486ed0941
S2GOMEMSMICIM69DTOBO1
Hersteller: Infineon Technologies
Description: BOARD
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Platform: Shield2Go
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+40.25 EUR
IRF7389PBF description irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90
IRF7389PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
TLE4984CHTE6747HAMA1 TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e
TLE4984CHTE6747HAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
Produkt ist nicht verfügbar
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