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BAT60BE6359HTMA1 BAT60BE6359HTMA1 Infineon Technologies Infineon-BAT60BSERIES-DS-v01_01-en.pdf Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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43+0.41 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.14 EUR
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IPU50R950CEBKMA1 IPU50R950CEBKMA1 Infineon Technologies IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPU50R950CEAKMA1 IPU50R950CEAKMA1 Infineon Technologies Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
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IPU50R2K0CE IPU50R2K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
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IPU50R3K0CE IPU50R3K0CE Infineon Technologies Part_Number_Guide_Web.pdf Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
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BTS5572EAUMA1 BTS5572EAUMA1 Infineon Technologies BTS5572E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 5
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
Produkt ist nicht verfügbar
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IR21084SPBF IR21084SPBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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DD1200S12H4HOSA1 DD1200S12H4HOSA1 Infineon Technologies Infineon-DD1200S12H4-DS-v02_03-EN.pdf?fileId=db3a304335f1f4b60136063f715759af Description: IGBT MODULE 1200V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200000 W
Produkt ist nicht verfügbar
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IRF7328TRPBF IRF7328TRPBF Infineon Technologies irf7328pbf.pdf?fileId=5546d462533600a4015355f60f931b53 Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
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IRF7328TRPBF IRF7328TRPBF Infineon Technologies irf7328pbf.pdf?fileId=5546d462533600a4015355f60f931b53 Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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S29GL01GS11DHIV10 S29GL01GS11DHIV10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 531 Stücke:
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10+20.73 EUR
25+20.45 EUR
40+20.20 EUR
80+17.70 EUR
260+16.94 EUR
520+16.83 EUR
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IDH09G65C5XKSA2 IDH09G65C5XKSA2 Infineon Technologies Infineon-IDH09G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a069a60db0147 Description: DIODE SIL CARB 650V 9A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A
Current - Reverse Leakage @ Vr: 160 µA @ 650 V
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IMYH200R100M1HXKSA1 IMYH200R100M1HXKSA1 Infineon Technologies Infineon-IMYH200R100M1H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef05a01123 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 6mA
Supplier Device Package: PG-TO247-4-U04
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
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TLD1173-1ET Infineon Technologies Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD60R460CEAUMA1 IPD60R460CEAUMA1 Infineon Technologies Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj)
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Produkt ist nicht verfügbar
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S6J332EHBESE20000 S6J332EHBESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 35x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
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IRFR7740PBF IRFR7740PBF Infineon Technologies irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122 Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF IRFR7740TRPBF Infineon Technologies irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122 Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF IRFR7740TRPBF Infineon Technologies irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122 Description: MOSFET N-CH 75V 87A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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CY14B104NA-BA25XIT CY14B104NA-BA25XIT Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1381KVE33-133AXI CY7C1381KVE33-133AXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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EVALHB2EDL803XG4CTOBO1 EVALHB2EDL803XG4CTOBO1 Infineon Technologies Infineon-Evaluation_board_EiceDRIVER_EVAL_HB_2EDL803X_G3C-G4B-G4C-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188aea7cf730194 Description: EVAL BOARD FOR 2EDL803XG4C
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL803xG4C
Supplied Contents: Board(s)
Primary Attributes: 48V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
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S25FL256SDSMFB000 S25FL256SDSMFB000 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF3704ZSPBF IRF3704ZSPBF Infineon Technologies irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929 Description: MOSFET N-CH 20V 67A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
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IRF3704SPBF IRF3704SPBF Infineon Technologies IRF3704%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
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IPC26N12NX1SA1 Infineon Technologies Infineon-IPC26N12N-DS-v02_05-EN.pdf?fileId=5546d4624fb7fef2014fd029d778654c Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 244µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
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IPC302N15N3X1SA1 Infineon Technologies DS_IPC302N15N3_2_5.pdf?fileId=db3a30434422e00e01442b691dc3512f Description: MOSFET N-CH 150V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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IPC302N20NFDX1SA1 Infineon Technologies Infineon-IPC302N20NFD-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c8114c525a05 Description: MOSFET N-CH 200V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
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SIDC23D120E6X1SA1 Infineon Technologies SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9 Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC23D120F6X1SA1 Infineon Technologies SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC23D120H6X1SA1 Infineon Technologies SIDC23D120H6.pdf Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC23D60E6X1SA4 Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC23D60E6YX1SA1 Infineon Technologies SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8 Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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FF2000XTR17IE5BPSA1 FF2000XTR17IE5BPSA1 Infineon Technologies Infineon-FF2000XTR17IE5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d0189f82d1e0951fd Description: PP IHM I
Packaging: Tray
auf Bestellung 1 Stücke:
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CYBLE-333073-02 CYBLE-333073-02 Infineon Technologies Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd03478e5955 Description: RF TXRX MOD BT ISM>1GHZSMD
Packaging: Tape & Reel (TR)
Package / Case: 45-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
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S25FL256LAGNFI013 S25FL256LAGNFI013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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2500+4.85 EUR
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S25FL256LAGNFI013 S25FL256LAGNFI013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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3+6.97 EUR
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25+5.90 EUR
50+5.69 EUR
100+5.49 EUR
250+5.24 EUR
500+5.05 EUR
1000+4.87 EUR
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S25FL256LAGMFV000 S25FL256LAGMFV000 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 240 Stücke:
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2+10.26 EUR
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25+9.18 EUR
40+9.11 EUR
80+8.18 EUR
240+8.15 EUR
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IPB65R310CFDAATMA1 IPB65R310CFDAATMA1 Infineon Technologies Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+1.78 EUR
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IPB65R310CFDAATMA1 IPB65R310CFDAATMA1 Infineon Technologies Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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4+4.73 EUR
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IPB65R310CFDATMA1 IPB65R310CFDATMA1 Infineon Technologies IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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S25FL128SDSMFBG13 S25FL128SDSMFBG13 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF2907Z AUIRF2907Z Infineon Technologies AUIRF2907Z.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF2907ZS7PTL AUIRF2907ZS7PTL Infineon Technologies AUIRF2907ZS-7P.pdf Description: MOSFET N-CH 75V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7580 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPAN70R360P7SXKSA1 IPAN70R360P7SXKSA1 Infineon Technologies Infineon-IPAN70R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3 Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Produkt ist nicht verfügbar
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BGSA200ML9E6327XTSA1 BGSA200ML9E6327XTSA1 Infineon Technologies Infineon-BGSA200ML9-DataSheet-v00_04-EN.pdf?fileId=8ac78c8c872bd8d6018775bb146e010b Description: IC RF SWITCH 2XSPST 400MHZ ANT
Packaging: Tape & Reel (TR)
Circuit: 2 x SPST
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 400MHz
Produkt ist nicht verfügbar
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BGSA200ML9E6327XTSA1 BGSA200ML9E6327XTSA1 Infineon Technologies Infineon-BGSA200ML9-DataSheet-v00_04-EN.pdf?fileId=8ac78c8c872bd8d6018775bb146e010b Description: IC RF SWITCH 2XSPST 400MHZ ANT
Packaging: Cut Tape (CT)
Circuit: 2 x SPST
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 400MHz
auf Bestellung 14900 Stücke:
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20+0.90 EUR
29+0.62 EUR
32+0.56 EUR
100+0.49 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.42 EUR
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BGT24AR4E6433XUMA1 BGT24AR4E6433XUMA1 Infineon Technologies Infineon-BGT24AR4-DS-v03_02-EN.pdf?fileId=5546d46259d9a4bf015a133a065d0db6 Description: IC RF MM WAVE MMICS 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Frequency: 24GHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: PG-VQFN-32-9
Serial Interfaces: SPI
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 12000 Stücke:
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3000+14.02 EUR
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BGT24AR4E6433XUMA1 BGT24AR4E6433XUMA1 Infineon Technologies Infineon-BGT24AR4-DS-v03_02-EN.pdf?fileId=5546d46259d9a4bf015a133a065d0db6 Description: IC RF MM WAVE MMICS 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Frequency: 24GHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: PG-VQFN-32-9
Serial Interfaces: SPI
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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100+16.65 EUR
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1000+15.23 EUR
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BGT24ATR24E6433XUMA1 BGT24ATR24E6433XUMA1 Infineon Technologies Description: MMW_AUTOMOTIVE
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+17.26 EUR
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BGT24ATR24E6433XUMA1 BGT24ATR24E6433XUMA1 Infineon Technologies Description: MMW_AUTOMOTIVE
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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1+30.43 EUR
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S6E1C12D0AGV20000 S6E1C12D0AGV20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
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3+6.67 EUR
10+5.98 EUR
25+5.65 EUR
160+4.90 EUR
320+4.65 EUR
480+4.17 EUR
960+3.52 EUR
Mindestbestellmenge: 3
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CYT4BB7CEBQ1AESGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
Produkt ist nicht verfügbar
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TLE4955CAAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S25FL129P0XNFI000 S25FL129P0XNFI000 Infineon Technologies Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC0604NLSATMA1 Infineon Technologies Infineon-ISC0604NLS-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8779172a0188074bb17f3fca Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KP229IGE3518XTMA1 KP229IGE3518XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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KP229IGE3518XTMA1 KP229IGE3518XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
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5+5.93 EUR
10+5.67 EUR
25+5.37 EUR
50+5.16 EUR
100+4.97 EUR
500+4.58 EUR
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CY7C1568KV18-400BZXCT CY7C1568KV18-400BZXCT Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR 183 B6327 BCR 183 B6327 Infineon Technologies bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3 Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
BAT60BE6359HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 10V 3A PGSOD3232
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9307 Stücke:
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Anzahl Preis
27+0.67 EUR
43+0.41 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.16 EUR
2000+0.15 EUR
5000+0.14 EUR
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IPU50R950CEBKMA1 IPx50R950CE+2.0.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043382e837301385194b31e1064
IPU50R950CEBKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
auf Bestellung 5380 Stücke:
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1731+0.27 EUR
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IPU50R950CEAKMA1 Infineon-IPU50R950CE-DS-v02_03-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPU50R950CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
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IPU50R2K0CE Part_Number_Guide_Web.pdf
IPU50R2K0CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
auf Bestellung 24000 Stücke:
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Anzahl Preis
2308+0.22 EUR
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IPU50R3K0CE Part_Number_Guide_Web.pdf
IPU50R3K0CE
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET CE
Packaging: Bulk
auf Bestellung 250540 Stücke:
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Anzahl Preis
2597+0.20 EUR
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BTS5572EAUMA1 BTS5572E.pdf
BTS5572EAUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 5
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 24A
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: PG-DSO-36-36
Dimming: SPI
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 28V
Grade: Automotive
Produkt ist nicht verfügbar
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IR21084SPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD1200S12H4HOSA1 Infineon-DD1200S12H4-DS-v02_03-EN.pdf?fileId=db3a304335f1f4b60136063f715759af
DD1200S12H4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200000 W
Produkt ist nicht verfügbar
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IRF7328TRPBF irf7328pbf.pdf?fileId=5546d462533600a4015355f60f931b53
IRF7328TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
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IRF7328TRPBF irf7328pbf.pdf?fileId=5546d462533600a4015355f60f931b53
IRF7328TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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S29GL01GS11DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHIV10
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 531 Stücke:
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Anzahl Preis
1+22.39 EUR
10+20.73 EUR
25+20.45 EUR
40+20.20 EUR
80+17.70 EUR
260+16.94 EUR
520+16.83 EUR
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IDH09G65C5XKSA2 Infineon-IDH09G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a069a60db0147
IDH09G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 9A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A
Current - Reverse Leakage @ Vr: 160 µA @ 650 V
auf Bestellung 2985 Stücke:
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Anzahl Preis
133+3.80 EUR
Mindestbestellmenge: 133
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IMYH200R100M1HXKSA1 Infineon-IMYH200R100M1H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c85c5e5aa0185c6ef05a01123
IMYH200R100M1HXKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 6mA
Supplier Device Package: PG-TO247-4-U04
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
auf Bestellung 161 Stücke:
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1+28.79 EUR
30+17.90 EUR
120+16.20 EUR
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TLD1173-1ET
Hersteller: Infineon Technologies
Description: IC LED DRV LIN PWM 500MA TO263-7
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD60R460CEAUMA1 Infineon-IPD60R460CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c8366df61f0e
IPD60R460CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tj)
Rds On (Max) @ Id, Vgs: 460mOhm @ 3.4A, 10V
Power Dissipation (Max): 74W
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Produkt ist nicht verfügbar
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S6J332EHBESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
S6J332EHBESE20000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 35x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
auf Bestellung 600 Stücke:
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Anzahl Preis
1+32.79 EUR
10+26.32 EUR
60+24.62 EUR
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IRFR7740PBF irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122
IRFR7740PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122
IRFR7740TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 87A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
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IRFR7740TRPBF irfr7740pbf.pdf?fileId=5546d462533600a401535635c2cc2122
IRFR7740TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 87A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 52A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 25 V
Produkt ist nicht verfügbar
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CY14B104NA-BA25XIT download
CY14B104NA-BA25XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1381KVE33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1381KVE33-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.68 EUR
10+54.24 EUR
25+52.50 EUR
72+50.51 EUR
144+49.23 EUR
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EVALHB2EDL803XG4CTOBO1 Infineon-Evaluation_board_EiceDRIVER_EVAL_HB_2EDL803X_G3C-G4B-G4C-UserManual-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188aea7cf730194
EVALHB2EDL803XG4CTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDL803XG4C
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL803xG4C
Supplied Contents: Board(s)
Primary Attributes: 48V Input Voltage
Secondary Attributes: On-Board Test Points
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+329.52 EUR
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S25FL256SDSMFB000 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SDSMFB000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF3704ZSPBF irf3704zpbf.pdf?fileId=5546d462533600a4015355df54f71929
IRF3704ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 67A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 21A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Produkt ist nicht verfügbar
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IRF3704SPBF IRF3704%28S%2CL%29PbF.pdf
IRF3704SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
Produkt ist nicht verfügbar
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IPC26N12NX1SA1 Infineon-IPC26N12N-DS-v02_05-EN.pdf?fileId=5546d4624fb7fef2014fd029d778654c
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 244µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 120 V
Produkt ist nicht verfügbar
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IPC302N15N3X1SA1 DS_IPC302N15N3_2_5.pdf?fileId=db3a30434422e00e01442b691dc3512f
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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IPC302N20NFDX1SA1 Infineon-IPC302N20NFD-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c8114c525a05
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
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SIDC23D120E6X1SA1 SIDC23D120E6_L4272P.pdf?folderId=db3a304412b407950112b435de3b63f8&fileId=db3a304412b407950112b435deb863f9
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC23D120F6X1SA1 SIDC23D120F6_L4275M.pdf?folderId=db3a304412b407950112b4355f2462ce&fileId=db3a304412b407950112b4355f9d62cf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 25 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC23D120H6X1SA1 SIDC23D120H6.pdf
Hersteller: Infineon Technologies
Description: DIODE GP 1.2KV 35A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 35 A
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Produkt ist nicht verfügbar
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SIDC23D60E6X1SA4 SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Hersteller: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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SIDC23D60E6YX1SA1 SIDC23D60E6_L4273M.pdf?folderId=db3a304412b407950112b436daf866e7&fileId=db3a304412b407950112b436db7866e8
Hersteller: Infineon Technologies
Description: DIODE GP 600V 50A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Produkt ist nicht verfügbar
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FF2000XTR17IE5BPSA1 Infineon-FF2000XTR17IE5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d0189f82d1e0951fd
FF2000XTR17IE5BPSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1774.17 EUR
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CYBLE-333073-02 Infineon-CYBLE-343072-02_CYBLE-333073-02_CYBLE-333074-02_AIROC_Bluetooth_LE_module-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd03478e5955
CYBLE-333073-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BT ISM>1GHZSMD
Packaging: Tape & Reel (TR)
Package / Case: 45-SMD Module
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 512kB Flash, 384kB RAM
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.5V ~ 3.6V
Power - Output: 12dBm
Data Rate: 6Mbps
Protocol: Bluetooth v5.2
Current - Receiving: 8mA
Current - Transmitting: 18mA
Antenna Type: Antenna Not Included
Utilized IC / Part: CYW20835
Modulation: GFSK
RF Family/Standard: Bluetooth, General ISM > 1GHz
Serial Interfaces: I2C, SPI, UART
Produkt ist nicht verfügbar
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S25FL256LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGNFI013
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+4.85 EUR
Mindestbestellmenge: 2500
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S25FL256LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGNFI013
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 4557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
10+6.19 EUR
25+5.90 EUR
50+5.69 EUR
100+5.49 EUR
250+5.24 EUR
500+5.05 EUR
1000+4.87 EUR
Mindestbestellmenge: 3
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S25FL256LAGMFV000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGMFV000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.26 EUR
10+9.36 EUR
25+9.18 EUR
40+9.11 EUR
80+8.18 EUR
240+8.15 EUR
Mindestbestellmenge: 2
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IPB65R310CFDAATMA1 Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d
IPB65R310CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.78 EUR
Mindestbestellmenge: 1000
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IPB65R310CFDAATMA1 Infineon-IPX65R310CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136bafdd723265d
IPB65R310CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 440µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+3.37 EUR
100+2.37 EUR
500+1.86 EUR
Mindestbestellmenge: 4
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IPB65R310CFDATMA1 IPP65R310CFD_2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432f91014f012f9caff105741c
IPB65R310CFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Power Dissipation (Max): 104.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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S25FL128SDSMFBG13 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDSMFBG13
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF2907Z AUIRF2907Z.pdf
AUIRF2907Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF2907ZS7PTL AUIRF2907ZS-7P.pdf
AUIRF2907ZS7PTL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 180A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 110A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7580 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPAN70R360P7SXKSA1 Infineon-IPAN70R360P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1977e2820c3
IPAN70R360P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
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BGSA200ML9E6327XTSA1 Infineon-BGSA200ML9-DataSheet-v00_04-EN.pdf?fileId=8ac78c8c872bd8d6018775bb146e010b
BGSA200ML9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH 2XSPST 400MHZ ANT
Packaging: Tape & Reel (TR)
Circuit: 2 x SPST
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 400MHz
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BGSA200ML9E6327XTSA1 Infineon-BGSA200ML9-DataSheet-v00_04-EN.pdf?fileId=8ac78c8c872bd8d6018775bb146e010b
BGSA200ML9E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH 2XSPST 400MHZ ANT
Packaging: Cut Tape (CT)
Circuit: 2 x SPST
RF Type: General Purpose
Voltage - Supply: 1.2V ~ 1.8V
Frequency Range: 400MHz
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.90 EUR
29+0.62 EUR
32+0.56 EUR
100+0.49 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.42 EUR
Mindestbestellmenge: 20
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BGT24AR4E6433XUMA1 Infineon-BGT24AR4-DS-v03_02-EN.pdf?fileId=5546d46259d9a4bf015a133a065d0db6
BGT24AR4E6433XUMA1
Hersteller: Infineon Technologies
Description: IC RF MM WAVE MMICS 32VQFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Frequency: 24GHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: PG-VQFN-32-9
Serial Interfaces: SPI
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+14.02 EUR
Mindestbestellmenge: 3000
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BGT24AR4E6433XUMA1 Infineon-BGT24AR4-DS-v03_02-EN.pdf?fileId=5546d46259d9a4bf015a133a065d0db6
BGT24AR4E6433XUMA1
Hersteller: Infineon Technologies
Description: IC RF MM WAVE MMICS 32VQFN
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Frequency: 24GHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: PG-VQFN-32-9
Serial Interfaces: SPI
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.50 EUR
10+19.34 EUR
25+18.06 EUR
100+16.65 EUR
250+15.97 EUR
500+15.57 EUR
1000+15.23 EUR
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BGT24ATR24E6433XUMA1
BGT24ATR24E6433XUMA1
Hersteller: Infineon Technologies
Description: MMW_AUTOMOTIVE
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+17.26 EUR
Mindestbestellmenge: 3000
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BGT24ATR24E6433XUMA1
BGT24ATR24E6433XUMA1
Hersteller: Infineon Technologies
Description: MMW_AUTOMOTIVE
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.43 EUR
10+23.43 EUR
25+21.67 EUR
100+19.75 EUR
250+18.83 EUR
500+18.28 EUR
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S6E1C12D0AGV20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C12D0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.67 EUR
10+5.98 EUR
25+5.65 EUR
160+4.90 EUR
320+4.65 EUR
480+4.17 EUR
960+3.52 EUR
Mindestbestellmenge: 3
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CYT4BB7CEBQ1AESGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I²C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
Produkt ist nicht verfügbar
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TLE4955CAAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-53
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: PWM
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4V ~ 20V
Technology: Hall Effect
Sensing Range: -30mT Trip, 30mT Release
Current - Output (Max): 16mA
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-2-53
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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S25FL129P0XNFI000 Infineon-S25FL129P_128-Mbit_3.0_V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5008a53b6&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL129P0XNFI000
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC0604NLSATMA1 Infineon-ISC0604NLS-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8779172a0188074bb17f3fca
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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KP229IGE3518XTMA1 fundamentals-of-power-semiconductors
KP229IGE3518XTMA1
Hersteller: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Tape & Reel (TR)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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KP229IGE3518XTMA1 fundamentals-of-power-semiconductors
KP229IGE3518XTMA1
Hersteller: Infineon Technologies
Description: IC ANLG ABSOLUTE PRES SNSR DSOF8
Packaging: Cut Tape (CT)
Applications: Board Mount
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.62 EUR
5+5.93 EUR
10+5.67 EUR
25+5.37 EUR
50+5.16 EUR
100+4.97 EUR
500+4.58 EUR
Mindestbestellmenge: 3
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CY7C1568KV18-400BZXCT download
CY7C1568KV18-400BZXCT
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR 183 B6327 bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
BCR 183 B6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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