Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (150727) > Seite 673 nach 2513
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S25HS01GTDPBHM030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (8x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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S25HS01GTFABHB030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (8x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
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CY8C3246AXI-131T | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 1x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
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CY8C3246AXI-131T | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 1x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 62 DigiKey Programmable: Not Verified |
auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3246LTI-125 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 50MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 2K x 8 Core Processor: 8051 Data Converters: A/D 16x12b; D/A 1x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Supplier Device Package: 48-QFN (7x7) Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 1046 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20636A-24LTXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (8kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
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CY8CPLC20-48LTXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Baud Rates: 2.4k Voltage - Supply: 4.75V ~ 5.25V Data Format: FSK Supplier Device Package: 48-QFN (7x7) |
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CY27410LTXI-028T | Infineon Technologies |
Description: IC SS CLOCK GENERATOR 48QFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Output: CML, HCSL, LVCMOS, LVDS, LVPECL Frequency - Max: 250MHz, 700MHz Type: Spread Spectrum Clock Generator Input: LVCMOS, Crystal Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V Ratio - Input:Output: 3:12 Differential - Input:Output: Yes/Yes Supplier Device Package: 48-QFN (7x7) PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 |
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CY8C20066A-24LTXI | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 5.5V Controller Series: CY8C20xx6A Program Memory Type: FLASH (32kB) Applications: Capacitive Sensing Core Processor: M8C Supplier Device Package: 48-QFN (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
auf Bestellung 614 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL256SAGBHIA13 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FL256SAGBHIA13 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-BGA (8x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 4507 Stücke: Lieferzeit 10-14 Tag (e) |
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S25FS256SAGMFI003 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
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S25FS256SAGMFI003 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1444 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF3315SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |
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C161SLM3VAABXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 2K x 8 Operating Temperature: 0°C ~ 70°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: EBI/EMI, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 63 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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C164CILMCAFNUMA2 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: ROMless Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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C164CI8EMCBKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
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C164CI8EMDBKXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 80-QFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: OTP Core Processor: C166 Data Converters: A/D 8x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: PG-MQFP-80-7 Number of I/O: 59 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IRG4BC40WPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
Produkt ist nicht verfügbar |
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IRG4BC40W-SPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
Produkt ist nicht verfügbar |
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IRG4BC40W-LPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-262 Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
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IRG4BC40W-STRRP | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 27ns/100ns Switching Energy: 110µJ (on), 230µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
Produkt ist nicht verfügbar |
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CY3250-100TQFP-FK | Infineon Technologies |
Description: PSOC POD FEET FOR 100-TQFP Packaging: Bulk For Use With/Related Products: CY3215-DK, CY8C29866-24AXI Accessory Type: 4 Emulation Pods |
Produkt ist nicht verfügbar |
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CYP15G0403DXB-BGXC | Infineon Technologies |
![]() Packaging: Tray Package / Case: 256-BGA Exposed Pad Mounting Type: Surface Mount Function: Transceiver Interface: LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Current - Supply: 900mA Supplier Device Package: 256-L2BGA (27x27) Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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IPDQ65R125CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
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IPDQ65R125CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 414 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ65R099CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPDQ65R099CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 460 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ65R080CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPDQ65R080CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 430 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ65R060CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPDQ65R060CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ65R040CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPDQ65R040CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 392 Stücke: Lieferzeit 10-14 Tag (e) |
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IPQC65R125CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPQC65R125CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IPQC65R040CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPQC65R040CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IPDQ65R017CFD7AXTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
IPB133N12NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BCR 162 B6327 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BB 814 B6327 GR1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Diode Type: 1 Pair Common Cathode Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz Q @ Vr, F: 200 @ 2V, 100MHz Capacitance Ratio Condition: C2/C8 Supplier Device Package: PG-SOT23 Voltage - Peak Reverse (Max): 18 V Capacitance Ratio: 2.25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S6J311EHACSE20000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 4MB (4M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-R5 Data Converters: A/D 56x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 116 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S6J311EHBCSE20000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 4MB (4M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-R5 Data Converters: A/D 56x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 116 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S6J311DHACSE20000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 3MB (3M x 8) RAM Size: 320K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-R5 Data Converters: A/D 56x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 116 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S6J311EJACSE20000 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 144MHz Program Memory Size: 4MB (4M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-R5 Data Converters: A/D 64x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 150 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY14V101Q3-SFXIT | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: NVSRAM (Non-Volatile SRAM) Clock Frequency: 30 MHz Memory Format: NVSRAM Supplier Device Package: 16-SOIC Memory Interface: SPI Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFS59N10DPBF | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFS5615TRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFS5615TRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
V611480NHPSA1 | Infineon Technologies |
![]() Packaging: Tray Color: Natural Length: 3.642" (92.51mm) Shape: Rectangular Type: Mount Width: 2.165" (55.00mm) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS2334STRPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 20-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
auf Bestellung 453 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2233PBF | Infineon Technologies |
![]() ![]() Packaging: Bulk Package / Case: 28-DIP (0.600", 15.24mm) Mounting Type: Through Hole Operating Temperature: 125°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: 28-PDIP Rise / Fall Time (Typ): 90ns, 40ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
auf Bestellung 6217 Stücke: Lieferzeit 10-14 Tag (e) |
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XDPL8220XUMA1CT | Infineon Technologies |
![]() Packaging: Bulk |
auf Bestellung 1930 Stücke: Lieferzeit 10-14 Tag (e) |
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REFXDPL8210U35WTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Features: Dimmable Voltage - Output: 18V ~ 54V Voltage - Input: 90 ~ 305 VAC Current - Output / Channel: 930mA Utilized IC / Part: XDPL8210 Supplied Contents: Board(s) Outputs and Type: 1 Isolated Output Contents: Board(s) |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C6148BZI-S2F44 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 124-VFBGA Mounting Type: Surface Mount Speed: 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I²S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT Supplier Device Package: 124-VFBGA (9x9) Number of I/O: 100 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
CY8C614AAZI-S2F04 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x8 SAR, 16x10/12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 128-TQFP (14x20) Number of I/O: 102 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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XMC7100-F100K1088AA | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 250MHz Program Memory Size: 1.088M x 8 RAM Size: 192K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 Data Converters: A/D 37x12b SAR Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT Supplier Device Package: 100-TEQFP (14x14) Number of I/O: 72 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
CYAT817L-100AA72 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 48KB (48K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: PWM Supplier Device Package: PG-TQFP-100-801 Number of I/O: 29 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
CYAT817LS-100AA72 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 48KB (48K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: I2C, SPI, UART/USART Peripherals: PWM Supplier Device Package: PG-TQFP-100-801 Number of I/O: 29 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
S25HS01GTDPBHM030 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S25HS01GTFABHB030 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI/QUAD 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C3246AXI-131T |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY8C3246AXI-131T |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 21.51 EUR |
10+ | 19.76 EUR |
25+ | 18.94 EUR |
100+ | 16.69 EUR |
250+ | 15.87 EUR |
500+ | 14.85 EUR |
CY8C3246LTI-125 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 64KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.75 EUR |
10+ | 11.54 EUR |
25+ | 10.74 EUR |
100+ | 9.87 EUR |
260+ | 9.67 EUR |
CY8C20636A-24LTXIT |
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Hersteller: Infineon Technologies
Description: IC MCU PSOC 8K FLASH 1K 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU PSOC 8K FLASH 1K 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8CPLC20-48LTXIT |
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Hersteller: Infineon Technologies
Description: IC PLC CHIP CMOS 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 48-QFN (7x7)
Description: IC PLC CHIP CMOS 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Baud Rates: 2.4k
Voltage - Supply: 4.75V ~ 5.25V
Data Format: FSK
Supplier Device Package: 48-QFN (7x7)
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY27410LTXI-028T |
Hersteller: Infineon Technologies
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
Description: IC SS CLOCK GENERATOR 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML, HCSL, LVCMOS, LVDS, LVPECL
Frequency - Max: 250MHz, 700MHz
Type: Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
Ratio - Input:Output: 3:12
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (7x7)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
Produkt ist nicht verfügbar
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CY8C20066A-24LTXI |
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Hersteller: Infineon Technologies
Description: IC CAPSENSE PSOC 32K 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC CAPSENSE PSOC 32K 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 614 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
76+ | 6.61 EUR |
S25FL256SAGBHIA13 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 5.09 EUR |
S25FL256SAGBHIA13 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 4507 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.44 EUR |
10+ | 6.01 EUR |
25+ | 5.83 EUR |
50+ | 5.7 EUR |
100+ | 5.56 EUR |
250+ | 5.38 EUR |
500+ | 5.25 EUR |
1000+ | 5.19 EUR |
S25FS256SAGMFI003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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S25FS256SAGMFI003 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1444 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.52 EUR |
10+ | 7.94 EUR |
25+ | 7.7 EUR |
50+ | 7.52 EUR |
100+ | 7.34 EUR |
250+ | 7.11 EUR |
500+ | 6.93 EUR |
IRF3315SPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 150V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 12A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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C161SLM3VAABXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 2K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
C164CILMCAFNUMA2 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT ROMLESS 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C164CI8EMCBKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C164CI8EMDBKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB OTP 80MQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Number of I/O: 59
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRG4BC40WPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRG4BC40W-SPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 40A 160W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A 160W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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IRG4BC40W-LPBF |
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Hersteller: Infineon Technologies
Description: IGBT 600V 40A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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IRG4BC40W-STRRP |
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Hersteller: Infineon Technologies
Description: IGBT 600V 40A 160W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A 160W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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CY3250-100TQFP-FK |
Hersteller: Infineon Technologies
Description: PSOC POD FEET FOR 100-TQFP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29866-24AXI
Accessory Type: 4 Emulation Pods
Description: PSOC POD FEET FOR 100-TQFP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C29866-24AXI
Accessory Type: 4 Emulation Pods
Produkt ist nicht verfügbar
Im Einkaufswagen
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CYP15G0403DXB-BGXC |
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Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Function: Transceiver
Interface: LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 900mA
Supplier Device Package: 256-L2BGA (27x27)
Number of Circuits: 4
Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Function: Transceiver
Interface: LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Current - Supply: 900mA
Supplier Device Package: 256-L2BGA (27x27)
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
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IPDQ65R125CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPDQ65R125CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.93 EUR |
10+ | 4.48 EUR |
25+ | 4.11 EUR |
100+ | 3.71 EUR |
250+ | 3.52 EUR |
IPDQ65R099CFD7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPDQ65R099CFD7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 186W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 480µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.99 EUR |
10+ | 5.31 EUR |
25+ | 4.89 EUR |
100+ | 4.42 EUR |
250+ | 4.2 EUR |
IPDQ65R080CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPDQ65R080CFD7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.45 EUR |
10+ | 7.24 EUR |
25+ | 6.68 EUR |
100+ | 6.07 EUR |
250+ | 5.78 EUR |
IPDQ65R060CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPDQ65R060CFD7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.44 EUR |
10+ | 8.81 EUR |
25+ | 8.15 EUR |
100+ | 7.43 EUR |
250+ | 7.09 EUR |
IPDQ65R040CFD7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPDQ65R040CFD7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.29 EUR |
10+ | 11.89 EUR |
25+ | 11.04 EUR |
100+ | 10.11 EUR |
250+ | 9.66 EUR |
IPQC65R125CFD7AXTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPQC65R125CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 5.93 EUR |
10+ | 4.48 EUR |
25+ | 4.11 EUR |
100+ | 3.71 EUR |
IPQC65R040CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPQC65R040CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.29 EUR |
10+ | 11.89 EUR |
25+ | 11.04 EUR |
100+ | 10.11 EUR |
IPDQ65R017CFD7AXTMA1 |
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Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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BCR 162 B6327 |
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Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
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BB 814 B6327 GR1 |
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Hersteller: Infineon Technologies
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
Description: DIODE VAR CAP 18V 50MA SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Diode Type: 1 Pair Common Cathode
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
Q @ Vr, F: 200 @ 2V, 100MHz
Capacitance Ratio Condition: C2/C8
Supplier Device Package: PG-SOT23
Voltage - Peak Reverse (Max): 18 V
Capacitance Ratio: 2.25
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S6J311EHACSE20000 |
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Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
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S6J311EHBCSE20000 |
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Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
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S6J311DHACSE20000 |
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Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 3MB (3M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 56x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 116
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S6J311EJACSE20000 |
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Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 150
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-R5
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.25V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 150
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CY14V101Q3-SFXIT |
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Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 30 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 1MBIT SPI 30MHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 30 MHz
Memory Format: NVSRAM
Supplier Device Package: 16-SOIC
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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IRFS59N10DPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
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IRFS5615TRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
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IRFS5615TRLPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
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V611480NHPSA1 |
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Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 48MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.642" (92.51mm)
Shape: Rectangular
Type: Mount
Width: 2.165" (55.00mm)
Description: CLAMP DISK DEVICES 48MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.642" (92.51mm)
Shape: Rectangular
Type: Mount
Width: 2.165" (55.00mm)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 117.66 EUR |
IRS2334STRPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.64 EUR |
10+ | 2.71 EUR |
25+ | 2.47 EUR |
100+ | 2.21 EUR |
250+ | 2.09 EUR |
IR2233PBF | ![]() |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28DIP
Packaging: Bulk
Package / Case: 28-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 28-PDIP
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 6217 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
22+ | 21.62 EUR |
XDPL8220XUMA1CT |
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auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
208+ | 2.35 EUR |
REFXDPL8210U35WTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XDPL8210
Packaging: Bulk
Features: Dimmable
Voltage - Output: 18V ~ 54V
Voltage - Input: 90 ~ 305 VAC
Current - Output / Channel: 930mA
Utilized IC / Part: XDPL8210
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Contents: Board(s)
Description: EVAL BOARD FOR XDPL8210
Packaging: Bulk
Features: Dimmable
Voltage - Output: 18V ~ 54V
Voltage - Input: 90 ~ 305 VAC
Current - Output / Channel: 930mA
Utilized IC / Part: XDPL8210
Supplied Contents: Board(s)
Outputs and Type: 1 Isolated Output
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 185.35 EUR |
CY8C6148BZI-S2F44 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I²S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I²C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I²S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY8C614AAZI-S2F04 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8 SAR, 16x10/12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8 SAR, 16x10/12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I²C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I²S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
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XMC7100-F100K1088AA |
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Hersteller: Infineon Technologies
Description: INDUSTRIAL MCUS
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 1.088M x 8
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 37x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TEQFP (14x14)
Number of I/O: 72
Description: INDUSTRIAL MCUS
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 1.088M x 8
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 37x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TEQFP (14x14)
Number of I/O: 72
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CYAT817L-100AA72 |
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Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
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CYAT817LS-100AA72 |
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Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: PWM
Supplier Device Package: PG-TQFP-100-801
Number of I/O: 29
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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