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AIMDQ75R140M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMDQ75R140M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 724 Stücke:
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2+11.32 EUR
10+7.65 EUR
100+5.57 EUR
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AIMZA75R140M1HXKSA1 AIMZA75R140M1HXKSA1 Infineon Technologies Infineon-AIMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6acbb010e90 Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
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2+11.95 EUR
30+6.92 EUR
120+5.81 EUR
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S99-50593 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD111B1W0201E6327XTSA1 ESD111B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3 Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
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ESD111B1W0201E6327XTSA1 ESD111B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3 Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
auf Bestellung 14900 Stücke:
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59+0.30 EUR
88+0.20 EUR
187+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.07 EUR
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ESD113B102ELE6327XTMA1 ESD113B102ELE6327XTMA1 Infineon Technologies Infineon-ESD113-B1Series-DS-v01_02-EN.pdf?fileId=5546d4614815da88014864b5329e1de7 Description: TVS DIODE 3.6VWM 8V PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 36W
Power Line Protection: No
Produkt ist nicht verfügbar
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PVT322APBF PVT322APBF Infineon Technologies IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 IQDH45N04LM6ATMA1 Infineon Technologies Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 IQDH45N04LM6ATMA1 Infineon Technologies Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4610 Stücke:
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3+6.21 EUR
10+4.37 EUR
100+3.14 EUR
500+2.90 EUR
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PEF2235NV4.1-IPAT Infineon Technologies Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 2390 Stücke:
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19+27.02 EUR
Mindestbestellmenge: 19
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PEF2235NV4.1 Infineon Technologies Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 170 Stücke:
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PEF22553HTV2.1 Infineon Technologies Description: LANTIQ PEF22553 TELECOMS IC
Packaging: Bulk
auf Bestellung 660 Stücke:
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IPA040N08NM5SXKSA1 IPA040N08NM5SXKSA1 Infineon Technologies Infineon-IPA040N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cf4ced66e27 Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 109µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
auf Bestellung 490 Stücke:
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3+6.28 EUR
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CYPAS211A132LQXQTXUMA1 CYPAS211A132LQXQTXUMA1 Infineon Technologies Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131 Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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CYPAS211A132LQXQTXUMA1 CYPAS211A132LQXQTXUMA1 Infineon Technologies Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131 Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 2000 Stücke:
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3+7.55 EUR
10+5.74 EUR
25+5.29 EUR
100+4.79 EUR
250+4.55 EUR
500+4.41 EUR
1000+4.29 EUR
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IRG4BH20K-SPBF IRG4BH20K-SPBF Infineon Technologies Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7 Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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TLE4274GSV25HTMA1 Infineon Technologies Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99 Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4000 Stücke:
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7+2.78 EUR
10+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.56 EUR
500+1.50 EUR
1000+1.45 EUR
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S99PL032J0080 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1413KV18-300BZCT CY7C1413KV18-300BZCT Infineon Technologies Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCM9WICED_SENSE2 BCM9WICED_SENSE2 Infineon Technologies Description: BLUETOOTH/802.15.1 WICEDSENSE2 B
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
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1+32.42 EUR
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BCM92073X_LE_TAG4 BCM92073X_LE_TAG4 Infineon Technologies Description: EVALUATION AND DEBUG BOARD FOR T
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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BCM92073X_LE_KIT BCM92073X_LE_KIT Infineon Technologies BCM92073X_LE_KIT_Web.pdf Description: WICED SMART DEVELOPMENT KIT FOR
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
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BCM920705EMB_ECLK Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: EVAL BOARD FOR BCM920705
Packaging: Bulk
For Use With/Related Products: BCM920705
Supplied Contents: Board(s)
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DDB6U180N16RRB37BOSA1 DDB6U180N16RRB37BOSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Supplier Device Package: Module
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DDB6U180N22RBPSA1 DDB6U180N22RBPSA1 Infineon Technologies Description: LOW POWER ECONO
Packaging: Tray
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1+136.82 EUR
15+108.48 EUR
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TLE4973AE35S5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
Produkt ist nicht verfügbar
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C167CSLMCAKXUMA3 C167CSLMCAKXUMA3 Infineon Technologies Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t Description: C167CS - LEGACY 16-BIT MICROCONT
Packaging: Bulk
DigiKey Programmable: Not Verified
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
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5+99.71 EUR
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C167CSLMCABXQLA1 C167CSLMCABXQLA1 Infineon Technologies c167cs4r_ds_v2.2_2001_08.pdf?folderId=db3a304412b407950112b41e5aa03294&fileId=db3a304412b407950112b41e5afd3295&ack=t Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
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C167CSLMCAFXQLA2 C167CSLMCAFXQLA2 Infineon Technologies C167CS-4R_-L_v2.2.pdf Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
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5+97.50 EUR
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C167CSL16M3VCAFXQLA2 C167CSL16M3VCAFXQLA2 Infineon Technologies Description: IC MCU 16BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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C167CSLMCAKXUMA3 Infineon Technologies Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t Description: IC MCU 32BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ0506NSATMA1 BSZ0506NSATMA1 Infineon Technologies Infineon-BSZ0506NS-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cfbae64b902a3 Description: MOSFET N-CH 30V 15A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 71426 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
13+1.37 EUR
100+1.06 EUR
500+0.90 EUR
1000+0.73 EUR
2000+0.69 EUR
Mindestbestellmenge: 11
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CY15V104QSN-108SXIT CY15V104QSN-108SXIT Infineon Technologies Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71 Description: IC FRAM 4MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IQDH29NE2LM5ATMA1 Infineon Technologies Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
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IQDH29NE2LM5ATMA1 Infineon Technologies Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
auf Bestellung 4826 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
10+4.83 EUR
100+3.91 EUR
500+3.47 EUR
1000+2.97 EUR
2000+2.80 EUR
Mindestbestellmenge: 4
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IQDH35N03LM5ATMA1 IQDH35N03LM5ATMA1 Infineon Technologies Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
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IQDH35N03LM5ATMA1 IQDH35N03LM5ATMA1 Infineon Technologies Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.67 EUR
10+4.53 EUR
100+3.20 EUR
500+2.71 EUR
1000+2.65 EUR
Mindestbestellmenge: 3
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IQDH88N06LM5ATMA1 IQDH88N06LM5ATMA1 Infineon Technologies Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
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IQDH88N06LM5ATMA1 IQDH88N06LM5ATMA1 Infineon Technologies Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 4697 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.59 EUR
10+5.71 EUR
100+4.08 EUR
500+3.39 EUR
1000+3.30 EUR
Mindestbestellmenge: 3
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IQD009N06NM5ATMA1 Infineon Technologies Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
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IQD009N06NM5ATMA1 Infineon Technologies Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
10+5.92 EUR
100+4.79 EUR
500+4.26 EUR
1000+3.65 EUR
2000+3.43 EUR
Mindestbestellmenge: 3
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IQD016N08NM5ATMA1 Infineon Technologies Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+3.43 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5ATMA1 Infineon Technologies Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.34 EUR
10+6.16 EUR
100+4.98 EUR
500+4.43 EUR
1000+3.79 EUR
2000+3.57 EUR
Mindestbestellmenge: 3
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IQD020N10NM5ATMA1 IQD020N10NM5ATMA1 Infineon Technologies Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
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IQD020N10NM5ATMA1 IQD020N10NM5ATMA1 Infineon Technologies Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.30 EUR
10+5.46 EUR
100+4.14 EUR
500+3.44 EUR
1000+3.37 EUR
Mindestbestellmenge: 3
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IQD063N15NM5ATMA1 IQD063N15NM5ATMA1 Infineon Technologies Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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IQD063N15NM5ATMA1 IQD063N15NM5ATMA1 Infineon Technologies Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 4802 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.11 EUR
10+5.89 EUR
100+4.80 EUR
500+4.33 EUR
1000+4.28 EUR
Mindestbestellmenge: 3
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TLE4998S8DXUMA1 Infineon Technologies Infineon-TLE4998S8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891dc6b31a5 Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4998P8DXUMA1 Infineon Technologies TLE4998P8_D_Rev1.1_2017-01.pdf Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4998C8DXUMA1 Infineon Technologies Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRLI540NPBF IRLI540NPBF Infineon Technologies irli540npbf.pdf?fileId=5546d462533600a401535664018125c1 Description: MOSFET N-CH 100V 23A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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S25FL256SDSMFI000 S25FL256SDSMFI000 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91248SZPFV-GS-549K5E1 MB91248SZPFV-GS-549K5E1 Infineon Technologies Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC299TP128F300SBCKXUMA1 TC299TP128F300SBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512S10TFA020 S29GL512S10TFA020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ETD480N22P60HPSA1 ETD480N22P60HPSA1 Infineon Technologies Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e Description: THYR / DIODE MODULE DK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
auf Bestellung 6 Stücke:
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2+314.14 EUR
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462791-1570 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY62177EV30LL-55BAXI CY62177EV30LL-55BAXI Infineon Technologies Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
1+59.05 EUR
10+54.55 EUR
25+52.79 EUR
50+51.47 EUR
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KITXMC14BOOT001TOBO1 KITXMC14BOOT001TOBO1 Infineon Technologies Infineon-Board_Users_Manual_XMC1400_Boot_Kit.pdf-UM-v01_00-EN.pdf?fileId=5546d462525dbac401527815f9a073fd Description: BOOT KIT XMC1404 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1404
Platform: Boot Kit
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
1+60.05 EUR
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AIMDQ75R140M1HXUMA1 Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMDQ75R140M1HXUMA1 Infineon-AIMDQ75R140M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0f8e8217f
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.32 EUR
10+7.65 EUR
100+5.57 EUR
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AIMZA75R140M1HXKSA1 Infineon-AIMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6acbb010e90
AIMZA75R140M1HXKSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tj)
Rds On (Max) @ Id, Vgs: 129mOhm @ 4.7A, 20V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 1.7mA
Supplier Device Package: PG-TO247-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.95 EUR
30+6.92 EUR
120+5.81 EUR
Mindestbestellmenge: 2
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S99-50593
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD111B1W0201E6327XTSA1 Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3
ESD111B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD111B1W0201E6327XTSA1 Infineon-ESD111-B1-W0201-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd01790db1840a47f3
ESD111B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 11VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.12pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power - Peak Pulse: 22W
Power Line Protection: No
auf Bestellung 14900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
88+0.20 EUR
187+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 59
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ESD113B102ELE6327XTMA1 Infineon-ESD113-B1Series-DS-v01_02-EN.pdf?fileId=5546d4614815da88014864b5329e1de7
ESD113B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.6VWM 8V PGTSLP220
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 36W
Power Line Protection: No
Produkt ist nicht verfügbar
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PVT322APBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
PVT322APBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Termination Style: PC Pin
Load Current: 170 mA
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 8 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: UL
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298
IQDH45N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQDH45N04LM6ATMA1 Infineon-IQDH45N04LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2d3240298
IQDH45N04LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 4610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
10+4.37 EUR
100+3.14 EUR
500+2.90 EUR
Mindestbestellmenge: 3
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PEF2235NV4.1-IPAT
Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 2390 Stücke:
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Anzahl Preis
19+27.02 EUR
Mindestbestellmenge: 19
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PEF2235NV4.1
Hersteller: Infineon Technologies
Description: ISDN PRIMARY ACCESS TRANSCEICER
Packaging: Bulk
auf Bestellung 170 Stücke:
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Anzahl Preis
19+27.02 EUR
Mindestbestellmenge: 19
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PEF22553HTV2.1
Hersteller: Infineon Technologies
Description: LANTIQ PEF22553 TELECOMS IC
Packaging: Bulk
auf Bestellung 660 Stücke:
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Anzahl Preis
8+67.84 EUR
Mindestbestellmenge: 8
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IPA040N08NM5SXKSA1 Infineon-IPA040N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cf4ced66e27
IPA040N08NM5SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 109µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.28 EUR
10+4.12 EUR
100+2.90 EUR
Mindestbestellmenge: 3
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CYPAS211A132LQXQTXUMA1 Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131
CYPAS211A132LQXQTXUMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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CYPAS211A132LQXQTXUMA1 Infineon-CYPAS211_EZ-PD_PAG2S-QZ_integrated_USB_PD_and_secondary-side_QR-ZVS_controller-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2aa933500131
CYPAS211A132LQXQTXUMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAG2S-QZ INTEGRATED USB PD
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Output Type: PWM Signal
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 20kHz ~ 300kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.15V ~ 30V
Supplier Device Package: 32-QFN (5x5)
Synchronous Rectifier: Yes
Output Phases: 1
Duty Cycle (Max): 55%
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.55 EUR
10+5.74 EUR
25+5.29 EUR
100+4.79 EUR
250+4.55 EUR
500+4.41 EUR
1000+4.29 EUR
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IRG4BH20K-SPBF Infineon-IRG4BH20K-S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015356435f0322a7
IRG4BH20K-SPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 11A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 23ns/93ns
Switching Energy: 450µJ (on), 440µJ (off)
Test Condition: 960V, 5A, 50Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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TLE4274GSV25HTMA1 Infineon-TLE4274V33-DS-v02_30-EN.pdf?fileId=5546d46258fc0bc101595f8e72d51f99
Hersteller: Infineon Technologies
Description: IC REG LIN 2.5V 400MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 2.5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 2V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.05 EUR
25+1.86 EUR
100+1.65 EUR
250+1.56 EUR
500+1.50 EUR
1000+1.45 EUR
Mindestbestellmenge: 7
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S99PL032J0080
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1413KV18-300BZCT Infineon-CY7C1411KV18_CY7C1426KV18_CY7C1413KV18_CY7C1415KV18_36-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd4aea2fa7&utm_source=cypress&utm_medium=referral&utm_campaign
CY7C1413KV18-300BZCT
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tape & Reel (TR)
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCM9WICED_SENSE2
BCM9WICED_SENSE2
Hersteller: Infineon Technologies
Description: BLUETOOTH/802.15.1 WICEDSENSE2 B
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.42 EUR
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BCM92073X_LE_TAG4
BCM92073X_LE_TAG4
Hersteller: Infineon Technologies
Description: EVALUATION AND DEBUG BOARD FOR T
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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BCM92073X_LE_KIT BCM92073X_LE_KIT_Web.pdf
BCM92073X_LE_KIT
Hersteller: Infineon Technologies
Description: WICED SMART DEVELOPMENT KIT FOR
Packaging: Bulk
For Use With/Related Products: BCM2073X
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCM920705EMB_ECLK Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BCM920705
Packaging: Bulk
For Use With/Related Products: BCM920705
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U180N16RRB37BOSA1 Part_Number_Guide_Web.pdf
DDB6U180N16RRB37BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Supplier Device Package: Module
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+168.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U180N22RBPSA1
DDB6U180N22RBPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+136.82 EUR
15+108.48 EUR
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TLE4973AE35S5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-VSON-6-4
Number of Channels: 1
Produkt ist nicht verfügbar
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C167CSLMCAKXUMA3 Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t
C167CSLMCAKXUMA3
Hersteller: Infineon Technologies
Description: C167CS - LEGACY 16-BIT MICROCONT
Packaging: Bulk
DigiKey Programmable: Not Verified
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+99.71 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C167CSLMCABXQLA1 c167cs4r_ds_v2.2_2001_08.pdf?folderId=db3a304412b407950112b41e5aa03294&fileId=db3a304412b407950112b41e5afd3295&ack=t
C167CSLMCABXQLA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+102.91 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C167CSLMCAFXQLA2 C167CS-4R_-L_v2.2.pdf
C167CSLMCAFXQLA2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT ROMLESS 144MQFP
Packaging: Bulk
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+97.50 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
C167CSL16M3VCAFXQLA2
C167CSL16M3VCAFXQLA2
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
C167CSLMCAKXUMA3 Infineon-C167CS4R-DS-v02_02-en%5B1%5D.pdf?fileId=db3a304412b407950112b41e5afd3295&ack=t
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 144MQFP
Packaging: Tray
Package / Case: 144-BQFP
Mounting Type: Surface Mount
Speed: 25MHz
RAM Size: 11K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: P-MQFP-144-8
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0506NSATMA1 Infineon-BSZ0506NS-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cfbae64b902a3
BSZ0506NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 71426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
13+1.37 EUR
100+1.06 EUR
500+0.90 EUR
1000+0.73 EUR
2000+0.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
CY15V104QSN-108SXIT Infineon-CY15B104QSN_CY15V104QSN_EXCELON_-Ultra_4_Mbit_(512K_x_8)_Quad_SPI_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee59c446d71
CY15V104QSN-108SXIT
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 108 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQDH29NE2LM5ATMA1 Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQDH29NE2LM5ATMA1 Infineon-IQDH29NE2LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599a0e9027c
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 254 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
auf Bestellung 4826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.74 EUR
10+4.83 EUR
100+3.91 EUR
500+3.47 EUR
1000+2.97 EUR
2000+2.80 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IQDH35N03LM5ATMA1 Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f
IQDH35N03LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQDH35N03LM5ATMA1 Infineon-IQDH35N03LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a456befa5020f
IQDH35N03LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.35mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.46mA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 262 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 15 V
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.67 EUR
10+4.53 EUR
100+3.20 EUR
500+2.71 EUR
1000+2.65 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IQDH88N06LM5ATMA1 Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2
IQDH88N06LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQDH88N06LM5ATMA1 Infineon-IQDH88N06LM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a45db3a3003b2
IQDH88N06LM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 4697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.59 EUR
10+5.71 EUR
100+4.08 EUR
500+3.39 EUR
1000+3.30 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IQD009N06NM5ATMA1 Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQD009N06NM5ATMA1 Infineon-IQD009N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4659dc640465
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.06 EUR
10+5.92 EUR
100+4.79 EUR
500+4.26 EUR
1000+3.65 EUR
2000+3.43 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5ATMA1 Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+3.43 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IQD016N08NM5ATMA1 Infineon-IQD016N08NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4562cd2a01fe
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.34 EUR
10+6.16 EUR
100+4.98 EUR
500+4.43 EUR
1000+3.79 EUR
2000+3.57 EUR
Mindestbestellmenge: 3
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IQD020N10NM5ATMA1 Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8
IQD020N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
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IQD020N10NM5ATMA1 Infineon-IQD020N10NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a467e766504b8
IQD020N10NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.30 EUR
10+5.46 EUR
100+4.14 EUR
500+3.44 EUR
1000+3.37 EUR
Mindestbestellmenge: 3
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IQD063N15NM5ATMA1 Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b
IQD063N15NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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IQD063N15NM5ATMA1 Infineon-IQD063N15NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8a44f57b018a46631b2a048b
IQD063N15NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta), 148A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-TSON-8-9
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 4802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.11 EUR
10+5.89 EUR
100+4.80 EUR
500+4.33 EUR
1000+4.28 EUR
Mindestbestellmenge: 3
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TLE4998S8DXUMA1 Infineon-TLE4998S8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891dc6b31a5
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4998P8DXUMA1 TLE4998P8_D_Rev1.1_2017-01.pdf
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE4998C8DXUMA1 Infineon-TLE4998C8D-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015bc891ed2f31ac
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 8TDSO
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRLI540NPBF irli540npbf.pdf?fileId=5546d462533600a401535664018125c1
IRLI540NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 23A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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S25FL256SDSMFI000 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SDSMFI000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91248SZPFV-GS-549K5E1
MB91248SZPFV-GS-549K5E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB MROM 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: FR60Lite RISC
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LCD, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC299TP128F300SBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC299TP128F300SBCKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512S10TFA020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S10TFA020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ETD480N22P60HPSA1 Infineon-DS_eTT480N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4dadb9366e
ETD480N22P60HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 135°C (TC)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 480 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+314.14 EUR
Mindestbestellmenge: 2
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462791-1570
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY62177EV30LL-55BAXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62177EV30LL-55BAXI
Hersteller: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 8, 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.05 EUR
10+54.55 EUR
25+52.79 EUR
50+51.47 EUR
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KITXMC14BOOT001TOBO1 Infineon-Board_Users_Manual_XMC1400_Boot_Kit.pdf-UM-v01_00-EN.pdf?fileId=5546d462525dbac401527815f9a073fd
KITXMC14BOOT001TOBO1
Hersteller: Infineon Technologies
Description: BOOT KIT XMC1404 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Utilized IC / Part: XMC1404
Platform: Boot Kit
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.05 EUR
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