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CYAT81688-100AS61KH CYAT81688-100AS61KH Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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10+18.16 EUR
90+15.79 EUR
180+15.68 EUR
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CY8C4127AXI-S453 CY8C4127AXI-S453 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
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2+8.99 EUR
10+8.08 EUR
25+7.64 EUR
160+6.62 EUR
320+6.28 EUR
480+5.64 EUR
960+4.75 EUR
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CY8C4148AZI-S453 CY8C4148AZI-S453 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109 Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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2+10.14 EUR
10+9.15 EUR
25+8.73 EUR
80+7.58 EUR
250+7.24 EUR
500+6.6 EUR
1000+5.75 EUR
2500+5.53 EUR
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CY8C4147AZI-S453 CY8C4147AZI-S453 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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10+6.77 EUR
25+6.24 EUR
80+5.75 EUR
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PXB4221EV3.4 PXB4221EV3.4 Infineon Technologies Description: ATM UNI SINGLE 2.048MBPS 3.3V 25
Packaging: Bulk
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PXB4220EV3.4 PXB4220EV3.4 Infineon Technologies Description: INTERWORKING ELEMENT FOR 8 E1/T1
Packaging: Bulk
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PXB4221EV3.2 PXB4221EV3.2 Infineon Technologies Description: IWE8 INTERWORKING ELEMENT
Packaging: Bulk
DigiKey Programmable: Not Verified
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IRFB4620PBFXKMA1 IRFB4620PBFXKMA1 Infineon Technologies infineon-irfb4620-datasheet-en.pdf?fileId=5546d462533600a401535616630a1e44 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB5620PBFXKMA1 IRFB5620PBFXKMA1 Infineon Technologies infineon-irfb5620-datasheet-en.pdf?fileId=5546d462533600a4015356167d611e4a Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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CY9AF342LBPMC1-G-JNE2 CY9AF342LBPMC1-G-JNE2 Infineon Technologies Infineon-CY9A340NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4 Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICL8201XTSA1 ICL8201XTSA1 Infineon Technologies ICL8201.pdf Description: IC LED DRVR OFFL TRIAC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 27V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6
Dimming: Triac
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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BC858BE6433HTMA1 BC858BE6433HTMA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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BGA5M1BN6E6327XTSA1 BGA5M1BN6E6327XTSA1 Infineon Technologies Infineon-BGA5M1BN6-DS-v02_02-EN.pdf?fileId=5546d462617643590161b3b177e035db Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
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740+0.62 EUR
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TLE42794GMXUMA2 TLE42794GMXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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BSO211PHXUMA1 BSO211PHXUMA1 Infineon Technologies BSO211PH.pdf Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
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BSO203PHXUMA1 BSO203PHXUMA1 Infineon Technologies BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11 Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
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FS75R12KE3B9BOSA1 FS75R12KE3B9BOSA1 Infineon Technologies Infineon-FS75R12KE3_B9-DS-v02_00-en_de.pdf?fileId=db3a30431a5c32f2011a7caf0c5c68d3 Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
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IPSA70R600CEAKMA1 IPSA70R600CEAKMA1 Infineon Technologies Infineon-IPSA70R600CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c99b2654f5 Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
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IPAW70R600CEXKSA1 IPAW70R600CEXKSA1 Infineon Technologies Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
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IPSA70R600P7SAKMA1 IPSA70R600P7SAKMA1 Infineon Technologies Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389 Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
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FS50R12KE3BOSA1 FS50R12KE3BOSA1 Infineon Technologies Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c Description: IGBT MOD 1200V 75A 270W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
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IRF8721TRPBFXTMA1 IRF8721TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
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IRF8721TRPBFXTMA1 IRF8721TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
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16+1.13 EUR
100+0.74 EUR
500+0.57 EUR
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TLE49462KHTMA1 Infineon Technologies Description: MAG SWITCH IC HALL EFF SC59-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIPS6031S AUIPS6031S Infineon Technologies AUIPS6031%28S%2CR%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Features: Auto Restart
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.1A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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IPS60R1K5CEAKMA1 IPS60R1K5CEAKMA1 Infineon Technologies Infineon-IPS60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537ac2003175ba Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
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IPS60R400CEAKMA1 IPS60R400CEAKMA1 Infineon Technologies Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02 Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
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CY62146G30-45ZSXIT CY62146G30-45ZSXIT Infineon Technologies Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IRL40T209ATMA2 IRL40T209ATMA2 Infineon Technologies Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
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S6J327CKSPSE20000 S6J327CKSPSE20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 120
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S6J327CLSPSC20000 S6J327CLSPSC20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670 Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
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IRSM808-204MH IRSM808-204MH Infineon Technologies irsm808-204mh.pdf?fileId=5546d462533600a40153567f1a5c2898 Description: IC HALF BRIDGE DRIVER 20A 31PQFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 130mOhm
Applications: AC Motors
Current - Output / Channel: 20A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 2466 Stücke:
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260+4.42 EUR
520+4.28 EUR
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FB50R07W2E3C36BPSA1 FB50R07W2E3C36BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
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SKW20N60FKSA1 SKW20N60FKSA1 Infineon Technologies SKW20N60.pdf Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
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SPP100N03S2-03 SPP100N03S2-03 Infineon Technologies SP%28I%2CP%2CB%29100N03S2-03.pdf Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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SPD100N03S2L-04 SPD100N03S2L-04 Infineon Technologies SPD100N03S2L-04.pdf Description: MOSFET N-CH 30V 100A TO252-5
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO252-5-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
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CYAT817AZS98-42002 CYAT817AZS98-42002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS88-42002 CYAT817AZS88-42002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS98-5BFBA CYAT817AZS98-5BFBA Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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IHW40T60FKSA1 IHW40T60FKSA1 Infineon Technologies IHW40T60.pdf Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/186ns
Switching Energy: 920µJ
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 303 W
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EVAL2ED2106TOBO1 EVAL2ED2106TOBO1 Infineon Technologies UM_General%20purpose%20basic%202ED2106S06F_Final.pdf Description: EVAL2ED2106TOBO1
Packaging: Box
Contents: Board(s)
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FF6MR12W2M1HPB11BPSA1 FF6MR12W2M1HPB11BPSA1 Infineon Technologies FF6MR12W2M1HP_B11_Rev0.10_8-7-23.pdf Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: Module
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CY8C4124PVE-S422T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
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SP4900111XTMA1 Infineon Technologies Description: TPMS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SP4900112XTMA1 Infineon Technologies Description: TPMS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR108WH6327XTSA1 BCR108WH6327XTSA1 Infineon Technologies bcr108series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144054398602e5 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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BCR108WH6433XTMA1 BCR108WH6433XTMA1 Infineon Technologies bcr108series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144054398602e5 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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ICE3BR0665JFXKSA1 ICE3BR0665JFXKSA1 Infineon Technologies Datasheet_ICE3BR0665JF_v20_11Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011cd55401f0127f Description: IC OFFLINE SWITCH FLYBACK TO220
Packaging: Bulk
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-TO220-6-347
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Power (Watts): 259 W
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SPD50N03S2L-06 SPD50N03S2L-06 Infineon Technologies SPD50N03S2L-06.pdf Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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BSO350N03 BSO350N03 Infineon Technologies BSO350N03.pdf Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
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BTG70020A1ESWXUMA1 BTG70020A1ESWXUMA1 Infineon Technologies Infineon-BTG70020A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cedea82661db8 Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.2mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 21.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTG70020A1ESWXUMA1 BTG70020A1ESWXUMA1 Infineon Technologies Infineon-BTG70020A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cedea82661db8 Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.2mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 21.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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10+4.82 EUR
25+4.43 EUR
100+4.01 EUR
250+3.81 EUR
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1000+3.59 EUR
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IRS2453DSPBF IRS2453DSPBF Infineon Technologies irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814 description Description: IRS2453 - GATE DRIVER
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
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KP466XTMA1 KP466XTMA1 Infineon Technologies Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df Description: XENSIV DIGITAL ABSOLUTE PRESSURE
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.22PSI (±1.5kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q103-002
Produkt ist nicht verfügbar
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KP466XTMA1 KP466XTMA1 Infineon Technologies Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df Description: XENSIV DIGITAL ABSOLUTE PRESSURE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.22PSI (±1.5kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q103-002
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CY39030V208-125NTXC CY39030V208-125NTXC Infineon Technologies Description: IC CPLD 512MC 10NS 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Number of Gates: 48000
Number of Macrocells: 512
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 208-PQFP (28x28)
Voltage Supply - Internal: 2.5V, 3.3V
Number of I/O: 136
DigiKey Programmable: Not Verified
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IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 Infineon Technologies IPP032N06N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e01239f2567817160 Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
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2385263 Infineon Technologies Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD204B102ELE6327XTMA1 ESD204B102ELE6327XTMA1 Infineon Technologies ESD204-B1-02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d354e3ab309c7 Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD8V0R1B-02LRH E6433 ESD8V0R1B-02LRH E6433 Infineon Technologies ESD8V0R1B_Rev09.pdf Description: TVS DIODE 14VWM 28VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CYAT81688-100AS61KH CYAT8168x.pdf
CYAT81688-100AS61KH
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 450 Stücke:
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Anzahl Preis
1+22.84 EUR
10+18.16 EUR
90+15.79 EUR
180+15.68 EUR
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CY8C4127AXI-S453 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4127AXI-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 1180 Stücke:
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Anzahl Preis
2+8.99 EUR
10+8.08 EUR
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160+6.62 EUR
320+6.28 EUR
480+5.64 EUR
960+4.75 EUR
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CY8C4148AZI-S453 Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109
CY8C4148AZI-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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Anzahl Preis
2+10.14 EUR
10+9.15 EUR
25+8.73 EUR
80+7.58 EUR
250+7.24 EUR
500+6.6 EUR
1000+5.75 EUR
2500+5.53 EUR
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CY8C4147AZI-S453 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4147AZI-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 347 Stücke:
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Anzahl Preis
2+8.87 EUR
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25+6.24 EUR
80+5.75 EUR
230+5.42 EUR
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PXB4221EV3.4
PXB4221EV3.4
Hersteller: Infineon Technologies
Description: ATM UNI SINGLE 2.048MBPS 3.3V 25
Packaging: Bulk
auf Bestellung 764 Stücke:
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4+139.23 EUR
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PXB4220EV3.4
PXB4220EV3.4
Hersteller: Infineon Technologies
Description: INTERWORKING ELEMENT FOR 8 E1/T1
Packaging: Bulk
auf Bestellung 131 Stücke:
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4+139.23 EUR
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PXB4221EV3.2
PXB4221EV3.2
Hersteller: Infineon Technologies
Description: IWE8 INTERWORKING ELEMENT
Packaging: Bulk
DigiKey Programmable: Not Verified
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4+149.54 EUR
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IRFB4620PBFXKMA1 infineon-irfb4620-datasheet-en.pdf?fileId=5546d462533600a401535616630a1e44
IRFB4620PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB5620PBFXKMA1 infineon-irfb5620-datasheet-en.pdf?fileId=5546d462533600a4015356167d611e4a
IRFB5620PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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CY9AF342LBPMC1-G-JNE2 Infineon-CY9A340NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4
CY9AF342LBPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICL8201XTSA1 ICL8201.pdf
ICL8201XTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR OFFL TRIAC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 27V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6
Dimming: Triac
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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BC858BE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC858BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8338+0.06 EUR
Mindestbestellmenge: 8338
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BGA5M1BN6E6327XTSA1 Infineon-BGA5M1BN6-DS-v02_02-EN.pdf?fileId=5546d462617643590161b3b177e035db
BGA5M1BN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
auf Bestellung 38129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
740+0.62 EUR
Mindestbestellmenge: 740
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TLE42794GMXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
283+1.64 EUR
Mindestbestellmenge: 283
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BSO211PHXUMA1 BSO211PH.pdf
BSO211PHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
741+0.63 EUR
Mindestbestellmenge: 741
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BSO203PHXUMA1 BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11
BSO203PHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
371+1.25 EUR
Mindestbestellmenge: 371
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FS75R12KE3B9BOSA1 Infineon-FS75R12KE3_B9-DS-v02_00-en_de.pdf?fileId=db3a30431a5c32f2011a7caf0c5c68d3
FS75R12KE3B9BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+191.87 EUR
Mindestbestellmenge: 2
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IPSA70R600CEAKMA1 Infineon-IPSA70R600CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c99b2654f5
IPSA70R600CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
498+0.91 EUR
Mindestbestellmenge: 498
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IPAW70R600CEXKSA1 Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd
IPAW70R600CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
auf Bestellung 10825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
302+1.5 EUR
Mindestbestellmenge: 302
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IPSA70R600P7SAKMA1 Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389
IPSA70R600P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 3550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
608+0.74 EUR
Mindestbestellmenge: 608
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FS50R12KE3BOSA1 Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c
FS50R12KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A 270W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+117.03 EUR
Mindestbestellmenge: 5
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IRF8721TRPBFXTMA1
IRF8721TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.44 EUR
Mindestbestellmenge: 4000
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IRF8721TRPBFXTMA1
IRF8721TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.52 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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TLE49462KHTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SC59-3
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIPS6031S AUIPS6031%28S%2CR%29.pdf
AUIPS6031S
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Features: Auto Restart
Packaging: Tube
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.1A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPS60R1K5CEAKMA1 Infineon-IPS60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537ac2003175ba
IPS60R1K5CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Produkt ist nicht verfügbar
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IPS60R400CEAKMA1 Infineon-IPA60R400CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c82d428e1f02
IPS60R400CEAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Tj)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 112W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
405+1.1 EUR
Mindestbestellmenge: 405
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CY62146G30-45ZSXIT Infineon-CY62146G_CY62146GE_CY62146GSL_CY62146GESL_MoBL_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed92ff45ad1&utm_source=cypress&utm_medium=referral&u
CY62146G30-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL40T209ATMA2 Infineon-IRL40T209-DS-v01_00-EN.pdf?fileId=5546d46265413c11016542adc035132a
IRL40T209ATMA2
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
Produkt ist nicht verfügbar
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S6J327CKSPSE20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J327CKSPSE20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 120
Produkt ist nicht verfügbar
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S6J327CLSPSC20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670
S6J327CLSPSC20000
Hersteller: Infineon Technologies
Description: TRAVEO-55NM
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 2.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 128
Produkt ist nicht verfügbar
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IRSM808-204MH irsm808-204mh.pdf?fileId=5546d462533600a40153567f1a5c2898
IRSM808-204MH
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 20A 31PQFN
Features: Bootstrap Circuit
Packaging: Tray
Package / Case: 31-PowerVQFN
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 130mOhm
Applications: AC Motors
Current - Output / Channel: 20A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 31-PQFN (8x9)
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.37 EUR
10+5.59 EUR
25+5.15 EUR
80+4.72 EUR
260+4.42 EUR
520+4.28 EUR
1040+4.16 EUR
Mindestbestellmenge: 3
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FB50R07W2E3C36BPSA1
FB50R07W2E3C36BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+105.41 EUR
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SKW20N60FKSA1 SKW20N60.pdf
SKW20N60FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
auf Bestellung 2799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
106+4.3 EUR
Mindestbestellmenge: 106
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SPP100N03S2-03 SP%28I%2CP%2CB%29100N03S2-03.pdf
SPP100N03S2-03
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
188+2.43 EUR
Mindestbestellmenge: 188
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SPD100N03S2L-04 SPD100N03S2L-04.pdf
SPD100N03S2L-04
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TO252-5
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO252-5-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
278+1.64 EUR
Mindestbestellmenge: 278
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CYAT817AZS98-42002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS98-42002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.79 EUR
10+49.6 EUR
72+47.37 EUR
144+42.36 EUR
288+40.41 EUR
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CYAT817AZS88-42002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS88-42002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.96 EUR
10+38.85 EUR
72+34.57 EUR
144+33.55 EUR
288+32.71 EUR
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CYAT817AZS98-5BFBA Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS98-5BFBA
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+63.36 EUR
10+59.1 EUR
72+56.62 EUR
144+51.31 EUR
288+49.54 EUR
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IHW40T60FKSA1 IHW40T60.pdf
IHW40T60FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/186ns
Switching Energy: 920µJ
Test Condition: 400V, 40A, 5.6Ohm, 15V
Gate Charge: 215 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 303 W
auf Bestellung 11523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
85+5.38 EUR
Mindestbestellmenge: 85
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EVAL2ED2106TOBO1 UM_General%20purpose%20basic%202ED2106S06F_Final.pdf
EVAL2ED2106TOBO1
Hersteller: Infineon Technologies
Description: EVAL2ED2106TOBO1
Packaging: Box
Contents: Board(s)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+83.23 EUR
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FF6MR12W2M1HPB11BPSA1 FF6MR12W2M1HP_B11_Rev0.10_8-7-23.pdf
FF6MR12W2M1HPB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Supplier Device Package: Module
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+227.94 EUR
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CY8C4124PVE-S422T
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SP4900111XTMA1
Hersteller: Infineon Technologies
Description: TPMS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SP4900112XTMA1
Hersteller: Infineon Technologies
Description: TPMS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BCR108WH6327XTSA1 bcr108series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144054398602e5
BCR108WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 31635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7053+0.06 EUR
Mindestbestellmenge: 7053
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BCR108WH6433XTMA1 bcr108series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144054398602e5
BCR108WH6433XTMA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7053+0.06 EUR
Mindestbestellmenge: 7053
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ICE3BR0665JFXKSA1 Datasheet_ICE3BR0665JF_v20_11Sep08.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a30431c69a49d011cd55401f0127f
ICE3BR0665JFXKSA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK TO220
Packaging: Bulk
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-TO220-6-347
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Power (Watts): 259 W
auf Bestellung 118874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
178+2.57 EUR
Mindestbestellmenge: 178
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SPD50N03S2L-06 SPD50N03S2L-06.pdf
SPD50N03S2L-06
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 2083 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
302+1.52 EUR
Mindestbestellmenge: 302
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BSO350N03 BSO350N03.pdf
BSO350N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
506+0.9 EUR
Mindestbestellmenge: 506
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BTG70020A1ESWXUMA1 Infineon-BTG70020A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cedea82661db8
BTG70020A1ESWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.2mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 21.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.46 EUR
Mindestbestellmenge: 3000
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BTG70020A1ESWXUMA1 Infineon-BTG70020A-1ESW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8caa022e018cedea82661db8
BTG70020A1ESWXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 24TSSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.2mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 21.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
10+4.82 EUR
25+4.43 EUR
100+4.01 EUR
250+3.81 EUR
500+3.69 EUR
1000+3.59 EUR
Mindestbestellmenge: 3
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IRS2453DSPBF description irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814
IRS2453DSPBF
Hersteller: Infineon Technologies
Description: IRS2453 - GATE DRIVER
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
180+2.52 EUR
Mindestbestellmenge: 180
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KP466XTMA1 Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df
KP466XTMA1
Hersteller: Infineon Technologies
Description: XENSIV DIGITAL ABSOLUTE PRESSURE
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.22PSI (±1.5kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q103-002
Produkt ist nicht verfügbar
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KP466XTMA1 Infineon-KP466-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c88ae21230188bf7fe19111df
KP466XTMA1
Hersteller: Infineon Technologies
Description: XENSIV DIGITAL ABSOLUTE PRESSURE
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 8.7PSI ~ 23.93PSI (60kPa ~ 165kPa)
Pressure Type: Absolute
Accuracy: ±0.22PSI (±1.5kPa)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q103-002
auf Bestellung 2671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.65 EUR
10+3.48 EUR
25+3.28 EUR
50+3.15 EUR
100+3.02 EUR
500+2.77 EUR
1000+2.68 EUR
Mindestbestellmenge: 5
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CY39030V208-125NTXC
CY39030V208-125NTXC
Hersteller: Infineon Technologies
Description: IC CPLD 512MC 10NS 208QFP
Packaging: Tray
Package / Case: 208-BFQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Number of Gates: 48000
Number of Macrocells: 512
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 10 ns
Supplier Device Package: 208-PQFP (28x28)
Voltage Supply - Internal: 2.5V, 3.3V
Number of I/O: 136
DigiKey Programmable: Not Verified
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+87.82 EUR
24+79.84 EUR
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IPI032N06N3GAKSA1 IPP032N06N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432313ff5e01239f2567817160
IPI032N06N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
168+2.72 EUR
Mindestbestellmenge: 168
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2385263
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD204B102ELE6327XTMA1 ESD204-B1-02series_rev_1_2.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433d346a2d013d354e3ab309c7
ESD204B102ELE6327XTMA1
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2-20
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-20
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD8V0R1B-02LRH E6433 ESD8V0R1B_Rev09.pdf
ESD8V0R1B-02LRH E6433
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 28VC TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSLP-2-17
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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