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BTG70902EPLDAUGHBRDTOBO1 BTG70902EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+77.4 EUR
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BTG70901EPLDAUGHBRDTOBO1 BTG70901EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+77.4 EUR
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BTG70502EPLDAUGHBRDTOBO1 BTG70502EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+78.18 EUR
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BTG70501EPLDAUGHBRDTOBO1 BTG70501EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
auf Bestellung 2 Stücke:
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1+77.4 EUR
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FF450R17ME3BOSA1 FF450R17ME3BOSA1 Infineon Technologies Infineon-FF450R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d01145046701403b2 Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1500R33HE3S6BOSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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ISP25DP06NMXTSA1 ISP25DP06NMXTSA1 Infineon Technologies Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399 Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3000 Stücke:
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1000+0.51 EUR
2000+0.46 EUR
3000+0.44 EUR
Mindestbestellmenge: 1000
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ISP25DP06NMXTSA1 ISP25DP06NMXTSA1 Infineon Technologies Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399 Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3703 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
Mindestbestellmenge: 10
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BAT6307WH6327XTSA1 BAT6307WH6327XTSA1 Infineon Technologies bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4 Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 88581 Stücke:
Lieferzeit 10-14 Tag (e)
2840+0.17 EUR
Mindestbestellmenge: 2840
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IPA60R145CFD7XKSA1 IPA60R145CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
auf Bestellung 928 Stücke:
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190+2.56 EUR
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AUIRL3705ZS AUIRL3705ZS Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
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179+2.54 EUR
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AUIRL3705ZS AUIRL3705ZS Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFP4310ZPBFXKMA1 IRFP4310ZPBFXKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
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2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 Infineon Technologies Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84 Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
Produkt ist nicht verfügbar
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2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 Infineon Technologies Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84 Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
auf Bestellung 4917 Stücke:
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8+2.41 EUR
10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
250+1.33 EUR
500+1.28 EUR
1000+1.24 EUR
2500+1.19 EUR
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CG10218AA Infineon Technologies Description: IC FRAM
Packaging: Tube
Memory Format: FRAM
Produkt ist nicht verfügbar
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CG10218AAT Infineon Technologies Description: IC FRAM
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Produkt ist nicht verfügbar
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BCP5116H6327XTSA1 BCP5116H6327XTSA1 Infineon Technologies bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
1947+0.24 EUR
Mindestbestellmenge: 1947
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BC848CE6433HTMA1 BC848CE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 50000 Stücke:
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7717+0.06 EUR
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AUIRF3805 AUIRF3805 Infineon Technologies INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3085 Stücke:
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139+3.26 EUR
Mindestbestellmenge: 139
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AUIRF3805L AUIRF3805L Infineon Technologies INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17404 Stücke:
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124+3.65 EUR
Mindestbestellmenge: 124
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SPA21N50C3XKSA1 SPA21N50C3XKSA1 Infineon Technologies infineon-spp-i-a21n50c3-ds-v03-02-en.pdf Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1465 Stücke:
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103+4.42 EUR
Mindestbestellmenge: 103
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SP4001101XTMA1 SP4001101XTMA1 Infineon Technologies Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+7.68 EUR
Mindestbestellmenge: 1800
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SP4001101XTMA1 SP4001101XTMA1 Infineon Technologies Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 2441 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.15 EUR
10+10.19 EUR
25+9.44 EUR
100+8.63 EUR
250+8.24 EUR
500+8.01 EUR
Mindestbestellmenge: 2
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MB9BFD18TPMC-GK7E1 MB9BFD18TPMC-GK7E1 Infineon Technologies Infineon-MB9BD10T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eded7cd63c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9180D32QKXUMA1 TLE9180D32QKXUMA1 Infineon Technologies Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9180D32QKXUMA1 TLE9180D32QKXUMA1 Infineon Technologies Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.8 EUR
10+7.53 EUR
25+6.96 EUR
100+6.34 EUR
250+6.04 EUR
500+5.86 EUR
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CY9AFB44NBBGL-GK9E1 CY9AFB44NBBGL-GK9E1 Infineon Technologies Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608 Description: IC MCU 32BIT 288KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS23 S29GL01GS10FHSS23 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS33 S29GL01GS10FHSS33 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS30 S29GL01GS10FHSS30 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYAT81688-100AS61T CYAT81688-100AS61T Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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1500+19.91 EUR
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CYAT81688-100AS61T CYAT81688-100AS61T Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT81688-100AS61ZT CYAT81688-100AS61ZT Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT81688-100AS61ZT CYAT81688-100AS61ZT Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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Lieferzeit 10-14 Tag (e)
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250+23.14 EUR
500+22.49 EUR
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CYAT81688-100AA71 Infineon Technologies Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.93 EUR
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CYAT81688-100AS61 CYAT81688-100AS61 Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.52 EUR
10+22.87 EUR
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CYAT81688-100AS61KH CYAT81688-100AS61KH Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.52 EUR
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90+19.91 EUR
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CY8C4127AXI-S453 CY8C4127AXI-S453 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
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2+8.99 EUR
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320+6.28 EUR
480+5.64 EUR
960+4.75 EUR
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CY8C4148AZI-S453 CY8C4148AZI-S453 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109 Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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2+10.14 EUR
10+9.15 EUR
25+8.73 EUR
80+7.58 EUR
250+7.24 EUR
500+6.6 EUR
1000+5.75 EUR
2500+5.53 EUR
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CY8C4147AZI-S453 CY8C4147AZI-S453 Infineon Technologies PSoC_4100S_Plus_RevH_9-14-18.pdf Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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Lieferzeit 10-14 Tag (e)
2+8.87 EUR
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80+5.75 EUR
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PXB4221EV3.4 PXB4221EV3.4 Infineon Technologies Description: ATM UNI SINGLE 2.048MBPS 3.3V 25
Packaging: Bulk
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PXB4220EV3.4 PXB4220EV3.4 Infineon Technologies Description: INTERWORKING ELEMENT FOR 8 E1/T1
Packaging: Bulk
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PXB4221EV3.2 PXB4221EV3.2 Infineon Technologies Description: IWE8 INTERWORKING ELEMENT
Packaging: Bulk
DigiKey Programmable: Not Verified
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IRFB4620PBFXKMA1 IRFB4620PBFXKMA1 Infineon Technologies infineon-irfb4620-datasheet-en.pdf?fileId=5546d462533600a401535616630a1e44 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB5620PBFXKMA1 IRFB5620PBFXKMA1 Infineon Technologies infineon-irfb5620-datasheet-en.pdf?fileId=5546d462533600a4015356167d611e4a Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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CY9AF342LBPMC1-G-JNE2 CY9AF342LBPMC1-G-JNE2 Infineon Technologies Infineon-CY9A340NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4 Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICL8201XTSA1 ICL8201XTSA1 Infineon Technologies ICL8201.pdf Description: IC LED DRVR OFFL TRIAC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 27V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6
Dimming: Triac
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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BC858BE6433HTMA1 BC858BE6433HTMA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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8338+0.06 EUR
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BGA5M1BN6E6327XTSA1 BGA5M1BN6E6327XTSA1 Infineon Technologies Infineon-BGA5M1BN6-DS-v02_02-EN.pdf?fileId=5546d462617643590161b3b177e035db Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
auf Bestellung 38129 Stücke:
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890+0.55 EUR
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TLE42794GMXUMA2 TLE42794GMXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
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BSO211PHXUMA1 BSO211PHXUMA1 Infineon Technologies BSO211PH.pdf Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
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741+0.63 EUR
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BSO203PHXUMA1 BSO203PHXUMA1 Infineon Technologies BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11 Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
371+1.25 EUR
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FS75R12KE3B9BOSA1 FS75R12KE3B9BOSA1 Infineon Technologies Infineon-FS75R12KE3_B9-DS-v02_00-en_de.pdf?fileId=db3a30431a5c32f2011a7caf0c5c68d3 Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
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2+191.98 EUR
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IPSA70R600CEAKMA1 IPSA70R600CEAKMA1 Infineon Technologies Infineon-IPSA70R600CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c99b2654f5 Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)
599+0.75 EUR
Mindestbestellmenge: 599
Im Einkaufswagen  Stück im Wert von  UAH
IPAW70R600CEXKSA1 IPAW70R600CEXKSA1 Infineon Technologies Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
auf Bestellung 10825 Stücke:
Lieferzeit 10-14 Tag (e)
364+1.25 EUR
Mindestbestellmenge: 364
Im Einkaufswagen  Stück im Wert von  UAH
IPSA70R600P7SAKMA1 IPSA70R600P7SAKMA1 Infineon Technologies Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389 Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 3550 Stücke:
Lieferzeit 10-14 Tag (e)
731+0.62 EUR
Mindestbestellmenge: 731
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FS50R12KE3BOSA1 FS50R12KE3BOSA1 Infineon Technologies Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c Description: IGBT MOD 1200V 75A 270W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
5+117.03 EUR
Mindestbestellmenge: 5
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IRF8721TRPBFXTMA1 IRF8721TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.44 EUR
Mindestbestellmenge: 4000
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IRF8721TRPBFXTMA1 IRF8721TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.52 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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BTG70902EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70902EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.4 EUR
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BTG70901EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70901EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.4 EUR
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BTG70502EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70502EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+78.18 EUR
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BTG70501EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70501EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.4 EUR
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FF450R17ME3BOSA1 Infineon-FF450R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d01145046701403b2
FF450R17ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1500R33HE3S6BOSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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ISP25DP06NMXTSA1 Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399
ISP25DP06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.51 EUR
2000+0.46 EUR
3000+0.44 EUR
Mindestbestellmenge: 1000
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ISP25DP06NMXTSA1 Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399
ISP25DP06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
Mindestbestellmenge: 10
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BAT6307WH6327XTSA1 bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4
BAT6307WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 88581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2840+0.17 EUR
Mindestbestellmenge: 2840
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IPA60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPA60R145CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
190+2.56 EUR
Mindestbestellmenge: 190
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AUIRL3705ZS auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
179+2.54 EUR
Mindestbestellmenge: 179
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AUIRL3705ZS auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4310ZPBFXKMA1
IRFP4310ZPBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDL8033G4BXTMA1 Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84
2EDL8033G4BXTMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDL8033G4BXTMA1 Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84
2EDL8033G4BXTMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
250+1.33 EUR
500+1.28 EUR
1000+1.24 EUR
2500+1.19 EUR
Mindestbestellmenge: 8
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CG10218AA
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tube
Memory Format: FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG10218AAT
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCP5116H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
BCP5116H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1947+0.24 EUR
Mindestbestellmenge: 1947
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BC848CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848CE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7717+0.06 EUR
Mindestbestellmenge: 7717
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AUIRF3805 INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw
AUIRF3805
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
139+3.26 EUR
Mindestbestellmenge: 139
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AUIRF3805L INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw
AUIRF3805L
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
124+3.65 EUR
Mindestbestellmenge: 124
Im Einkaufswagen  Stück im Wert von  UAH
SPA21N50C3XKSA1 infineon-spp-i-a21n50c3-ds-v03-02-en.pdf
SPA21N50C3XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
103+4.42 EUR
Mindestbestellmenge: 103
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SP4001101XTMA1 Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d
SP4001101XTMA1
Hersteller: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+7.68 EUR
Mindestbestellmenge: 1800
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SP4001101XTMA1 Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d
SP4001101XTMA1
Hersteller: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 2441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.15 EUR
10+10.19 EUR
25+9.44 EUR
100+8.63 EUR
250+8.24 EUR
500+8.01 EUR
Mindestbestellmenge: 2
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MB9BFD18TPMC-GK7E1 Infineon-MB9BD10T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eded7cd63c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB9BFD18TPMC-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9180D32QKXUMA1 Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256
TLE9180D32QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9180D32QKXUMA1 Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256
TLE9180D32QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.8 EUR
10+7.53 EUR
25+6.96 EUR
100+6.34 EUR
250+6.04 EUR
500+5.86 EUR
Mindestbestellmenge: 2
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CY9AFB44NBBGL-GK9E1 Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608
CY9AFB44NBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS23 PdfFile_133368.pdf
S29GL01GS10FHSS23
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS33 PdfFile_133368.pdf
S29GL01GS10FHSS33
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS30 PdfFile_133368.pdf
S29GL01GS10FHSS30
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYAT81688-100AS61T CYAT8168x.pdf
CYAT81688-100AS61T
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+19.91 EUR
Mindestbestellmenge: 1500
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CYAT81688-100AS61T CYAT8168x.pdf
CYAT81688-100AS61T
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.89 EUR
10+28.59 EUR
25+26.51 EUR
100+24.23 EUR
250+23.14 EUR
500+22.49 EUR
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CYAT81688-100AS61ZT CYAT8168x.pdf
CYAT81688-100AS61ZT
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+21.68 EUR
Mindestbestellmenge: 1500
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CYAT81688-100AS61ZT CYAT8168x.pdf
CYAT81688-100AS61ZT
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.89 EUR
10+28.59 EUR
25+26.51 EUR
100+24.23 EUR
250+23.14 EUR
500+22.49 EUR
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CYAT81688-100AA71 Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.93 EUR
10+30.37 EUR
25+29 EUR
90+25.93 EUR
270+24.74 EUR
450+23.54 EUR
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CYAT81688-100AS61 CYAT8168x.pdf
CYAT81688-100AS61
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.52 EUR
10+22.87 EUR
25+21.21 EUR
90+19.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYAT81688-100AS61KH CYAT8168x.pdf
CYAT81688-100AS61KH
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.52 EUR
10+22.87 EUR
25+21.21 EUR
90+19.91 EUR
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CY8C4127AXI-S453 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4127AXI-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 37
DigiKey Programmable: Not Verified
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.99 EUR
10+8.08 EUR
25+7.64 EUR
160+6.62 EUR
320+6.28 EUR
480+5.64 EUR
960+4.75 EUR
Mindestbestellmenge: 2
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CY8C4148AZI-S453 Infineon-PSOC_4_PSOC_4100S_PLUS_256KB_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8193c7109
CY8C4148AZI-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.14 EUR
10+9.15 EUR
25+8.73 EUR
80+7.58 EUR
250+7.24 EUR
500+6.6 EUR
1000+5.75 EUR
2500+5.53 EUR
Mindestbestellmenge: 2
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CY8C4147AZI-S453 PSoC_4100S_Plus_RevH_9-14-18.pdf
CY8C4147AZI-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.87 EUR
10+6.77 EUR
25+6.24 EUR
80+5.75 EUR
230+5.42 EUR
Mindestbestellmenge: 2
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PXB4221EV3.4
PXB4221EV3.4
Hersteller: Infineon Technologies
Description: ATM UNI SINGLE 2.048MBPS 3.3V 25
Packaging: Bulk
auf Bestellung 764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+139.23 EUR
Mindestbestellmenge: 4
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PXB4220EV3.4
PXB4220EV3.4
Hersteller: Infineon Technologies
Description: INTERWORKING ELEMENT FOR 8 E1/T1
Packaging: Bulk
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+139.23 EUR
Mindestbestellmenge: 4
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PXB4221EV3.2
PXB4221EV3.2
Hersteller: Infineon Technologies
Description: IWE8 INTERWORKING ELEMENT
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 4160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+149.54 EUR
Mindestbestellmenge: 4
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IRFB4620PBFXKMA1 infineon-irfb4620-datasheet-en.pdf?fileId=5546d462533600a401535616630a1e44
IRFB4620PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IRFB5620PBFXKMA1 infineon-irfb5620-datasheet-en.pdf?fileId=5546d462533600a4015356167d611e4a
IRFB5620PBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PG-TO220-3-904
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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CY9AF342LBPMC1-G-JNE2 Infineon-CY9A340NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4
CY9AF342LBPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICL8201XTSA1 ICL8201.pdf
ICL8201XTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR OFFL TRIAC SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Voltage - Output: 27V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 40kHz ~ 150kHz
Type: AC DC Offline Switcher
Operating Temperature: -25°C ~ 150°C (TJ)
Applications: Lighting
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-SOT23-6
Dimming: Triac
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 18V
Produkt ist nicht verfügbar
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BC858BE6433HTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC858BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8338+0.06 EUR
Mindestbestellmenge: 8338
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BGA5M1BN6E6327XTSA1 Infineon-BGA5M1BN6-DS-v02_02-EN.pdf?fileId=5546d462617643590161b3b177e035db
BGA5M1BN6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP LTE 1.805GHZ-2.2GHZ TSNP6
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.805GHz ~ 2.2GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 19.3dB
Current - Supply: 9.5mA
Noise Figure: 0.65dB
P1dB: -17dBm
Test Frequency: 2GHz
Supplier Device Package: PG-TSNP-6-10
auf Bestellung 38129 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
890+0.55 EUR
Mindestbestellmenge: 890
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TLE42794GMXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 280 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 8 mA
Qualification: AEC-Q100
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
283+1.64 EUR
Mindestbestellmenge: 283
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BSO211PHXUMA1 BSO211PH.pdf
BSO211PHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 4A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-DSO-8
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
741+0.63 EUR
Mindestbestellmenge: 741
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BSO203PHXUMA1 BSO203P_H_1.31.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a3043271faefd0127b46bc7670b11
BSO203PHXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 7A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Supplier Device Package: PG-DSO-8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
371+1.25 EUR
Mindestbestellmenge: 371
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FS75R12KE3B9BOSA1 Infineon-FS75R12KE3_B9-DS-v02_00-en_de.pdf?fileId=db3a30431a5c32f2011a7caf0c5c68d3
FS75R12KE3B9BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 105A 355W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.3 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+191.98 EUR
Mindestbestellmenge: 2
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IPSA70R600CEAKMA1 Infineon-IPSA70R600CE-DS-v02_00-EN.pdf?fileId=5546d46257fa4a9c015805c99b2654f5
IPSA70R600CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
599+0.75 EUR
Mindestbestellmenge: 599
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IPAW70R600CEXKSA1 Infineon-IPAW70R600CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d21612bd71fd
IPAW70R600CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO220-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
auf Bestellung 10825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
364+1.25 EUR
Mindestbestellmenge: 364
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IPSA70R600P7SAKMA1 Infineon-IPSA70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4d9c5ab11389
IPSA70R600P7SAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 43.1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 3550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
731+0.62 EUR
Mindestbestellmenge: 731
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FS50R12KE3BOSA1 Infineon-FS50R12KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311b49537c
FS50R12KE3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A 270W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 270 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+117.03 EUR
Mindestbestellmenge: 5
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IRF8721TRPBFXTMA1
IRF8721TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.44 EUR
Mindestbestellmenge: 4000
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IRF8721TRPBFXTMA1
IRF8721TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.13 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.52 EUR
2000+0.48 EUR
Mindestbestellmenge: 10
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