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CY7C1041GN-10VXIT CY7C1041GN-10VXIT Infineon Technologies Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1041GE-10ZSXIT CY7C1041GE-10ZSXIT Infineon Technologies Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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BSC0580NSATMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
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IR2166PBFXKXA1 Infineon Technologies Description: IC PFC/BALLAST CNTRL 50KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 39kHz ~ 84kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.5V ~ 17V
Supplier Device Package: 16-DIP
Dimming: No
Current - Supply: 2.3 mA
Produkt ist nicht verfügbar
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F3L300R12ME4B23BOSA1 F3L300R12ME4B23BOSA1 Infineon Technologies Infineon-F3L300R12ME4_B23-DS-v03_01-EN.pdf?fileId=db3a304333b8a7ca0133fa6e9444448f Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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TD500N16KOFXPSA1 TD500N16KOFXPSA1 Infineon Technologies Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
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CY9AFA44LAPMC1-G-JNE2 CY9AFA44LAPMC1-G-JNE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
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CY23EP09ZXC-1HT CY23EP09ZXC-1HT Infineon Technologies download Description: IC FANOUT BUFFER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP09SXI-1H CY23EP09SXI-1H Infineon Technologies download Description: IC CLK ZDB 9OUT 220MHZ 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP09SXI-1H CY23EP09SXI-1H Infineon Technologies download Description: IC CLK ZDB 9OUT 220MHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP09SXI-1HT CY23EP09SXI-1HT Infineon Technologies download Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP09SXI-1HT CY23EP09SXI-1HT Infineon Technologies download Description: IC FANOUT BUFFER 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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10+10.58 EUR
25+9.81 EUR
100+8.95 EUR
250+8.54 EUR
500+8.31 EUR
1000+8.1 EUR
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CY9BF468NPQC-G-JNE2 CY9BF468NPQC-G-JNE2 Infineon Technologies Infineon-CY9B460R_Series_32-bit_Arm_Cortex_-MF4_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c81fb7ad201821501ca6c7d04 Description: IC MCU 32BIT 1.03125MB 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 80
DigiKey Programmable: Not Verified
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S29GL128S11FHBV20 S29GL128S11FHBV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IS26KS512S-DPBLA300 Infineon Technologies Description: INFINEON
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: HyperFlash
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-VFBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
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9024074AA Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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9023042AK Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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9023616AC Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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9021933 Infineon Technologies Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY2548QIT CY2548QIT Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6J32BAKSESE2000A Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32B 2.112MB FLASH 208TQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TQFP (28x28)
Number of I/O: 120
DigiKey Programmable: Not Verified
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CY8C4147AZSS598XQLA1 CY8C4147AZSS598XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
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ESD3V3U1U-02LS E6327 ESD3V3U1U-02LS E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD3V3U1U-02LS E6327 ESD3V3U1U-02LS E6327 Infineon Technologies ESD3V3U1U.pdf Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
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ESD5V0H1U-02LS E6327 ESD5V0H1U-02LS E6327 Infineon Technologies ESD5V0H1U-02LS.pdf Description: TVS DIODE 5VWM 40VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.27pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 40V (Typ)
Power Line Protection: No
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ESD24VL1B-02LS E6327 ESD24VL1B-02LS E6327 Infineon Technologies ESD24VL1B+Series_rev_1_1ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433899edae01389eb4ba7d508e Description: TVS DIODE 24VWM 55VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B02LSE6327XTSA1 Infineon Technologies ESD3V3S1B.pdf Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B02LSE6327XTSA1 Infineon Technologies ESD3V3S1B.pdf Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
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ESD206B102ELSE6327XTSA1 ESD206B102ELSE6327XTSA1 Infineon Technologies ESD206-B1-02.pdf Description: TVS DIODE 5.5VWM 9.6VC TSSLP-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
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PXE1410CDMG003XTMA1 PXE1410CDMG003XTMA1 Infineon Technologies 448_PXE1410CDMG003XTMA1-1-20.pdf Description: IC CTLR PRIMARION 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
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PXE1410CDMG003XTMA1 PXE1410CDMG003XTMA1 Infineon Technologies 448_PXE1410CDMG003XTMA1-1-20.pdf Description: IC CTLR PRIMARION 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
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ETD630N18P60HPSA1 ETD630N18P60HPSA1 Infineon Technologies Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f Description: SCR MODULE 1.8KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
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BBY 56-02W E6327 BBY 56-02W E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
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BSM10GP120BOSA1 Infineon Technologies Description: IGBT MOD 1200V 20A 100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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IM66D130AXTMA1 IM66D130AXTMA1 Infineon Technologies Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41 Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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IM66D130AXTMA1 IM66D130AXTMA1 Infineon Technologies Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41 Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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CG7742AAT Infineon Technologies Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
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CG7772AA CG7772AA Infineon Technologies Description: IC SRAM 72MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Single Port, Synchronous, ZBT
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
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CG8741AAT Infineon Technologies Description: INFINEON
Packaging: Bulk
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CG8941ATT Infineon Technologies Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
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TDB6HK180N22RRPB11BPSA1 Infineon Technologies Infineon-TDB6HK180N22RRP_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c7ba0a117017ba1ea2b8e039d Description: LOW POWER ECONO AG-ECONO2B-411
Voltage - Off State: 2.2 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - Gate Trigger (Igt) (Max): 70 mA
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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PTF180101S V1 Infineon Technologies ptf180101s_ds2a.pdf Description: RF MOSFET LDMOS 28V H-32259-2
Packaging: Tape & Reel (TR)
Package / Case: H-32259-2
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-32259-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
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IPB100N10S305ATMA2 IPB100N10S305ATMA2 Infineon Technologies Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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IPP100N10S305AKSA2 IPP100N10S305AKSA2 Infineon Technologies Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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PXE1331CDNG003XTMA1 Infineon Technologies Description: IC CONTROLLER
Packaging: Tape & Reel (TR)
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PXE1331CDNG003XTMA1 Infineon Technologies Description: IC CONTROLLER
Packaging: Cut Tape (CT)
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10+10.04 EUR
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100+8.23 EUR
250+7.81 EUR
500+7.01 EUR
1000+5.91 EUR
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FF225R17ME4B11BOSA1 FF225R17ME4B11BOSA1 Infineon Technologies Infineon-FF225R17ME4_B11-DS-v02_01-en_de.pdf?fileId=db3a30432fbc32ee012fbf631bc73a55 Description: IGBT MOD 1700V 340A 1500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FF900R17ME7PB11BPSA1 Infineon Technologies Description: MEDIUM POWER ECONO
Packaging: Tray
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FS225R17OE4PBOSA1 FS225R17OE4PBOSA1 Infineon Technologies Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Bulk
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FS225R17OE4PBOSA1 FS225R17OE4PBOSA1 Infineon Technologies Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Tray
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FT150R12KE3B5BOSA1 Infineon Technologies Description: IGBT MODULE POWER
Packaging: Bulk
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FZ1200R16KF4S1NOSA1 Infineon Technologies INFNS14535-1.pdf?t.download=true&u=5oefqw Description: FZ1200R16 - INSULATED GATE BIPOL
Packaging: Bulk
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FZ1200R17KF6CB2NOSA1 Infineon Technologies FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 79 nF @ 25 V
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FZ1600R12KL4CNOSA1 Infineon Technologies FZ1600R12KL4C_Rev3.1_2013-10-02.pdf Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.6kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 2450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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GATELEAD14231XPSA1 GATELEAD14231XPSA1 Infineon Technologies Description: ACCY GATE LEAD
Packaging: Tray
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GATELEAD14232XPSA1 GATELEAD14232XPSA1 Infineon Technologies Description: ACCY GATE LEAD
Packaging: Tray
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IPB096N03LGATMA1 IPB096N03LGATMA1 Infineon Technologies IP%28B%2CP%29096N03L_G.pdf Description: MOSFET N-CH 30V 35A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP65R110CFDAAKSA1 IPP65R110CFDAAKSA1 Infineon Technologies Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
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IPA65R110CFDXKSA2 IPA65R110CFDXKSA2 Infineon Technologies DS_IPX65R110CFD_2_61.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301306abd8e2041b1 Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
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ND104N18KHPSA1 Infineon Technologies INFNS29282-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 1.8KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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CY7C1041GN-10VXIT Infineon-CY7C1041GN_4-Mbit_(256K_words_16_bit)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed82ae859a5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1041GN-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
Packaging: Tape & Reel (TR)
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1041GE-10ZSXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
CY7C1041GE-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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BSC0580NSATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2166PBFXKXA1
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CNTRL 50KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 39kHz ~ 84kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 8.5V ~ 17V
Supplier Device Package: 16-DIP
Dimming: No
Current - Supply: 2.3 mA
Produkt ist nicht verfügbar
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F3L300R12ME4B23BOSA1 Infineon-F3L300R12ME4_B23-DS-v03_01-EN.pdf?fileId=db3a304333b8a7ca0133fa6e9444448f
F3L300R12ME4B23BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 450A 1550W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1550 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
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1+555.29 EUR
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TD500N16KOFXPSA1 Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TD500N16KOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CY9AFA44LAPMC1-G-JNE2
CY9AFA44LAPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
Produkt ist nicht verfügbar
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CY23EP09ZXC-1HT download
CY23EP09ZXC-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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4+6.24 EUR
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CY23EP09SXI-1H download
CY23EP09SXI-1H
Hersteller: Infineon Technologies
Description: IC CLK ZDB 9OUT 220MHZ 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP09SXI-1H download
CY23EP09SXI-1H
Hersteller: Infineon Technologies
Description: IC CLK ZDB 9OUT 220MHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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2+15.9 EUR
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CY23EP09SXI-1HT download
CY23EP09SXI-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
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2500+7.89 EUR
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CY23EP09SXI-1HT download
CY23EP09SXI-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.7 EUR
10+10.58 EUR
25+9.81 EUR
100+8.95 EUR
250+8.54 EUR
500+8.31 EUR
1000+8.1 EUR
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CY9BF468NPQC-G-JNE2 Infineon-CY9B460R_Series_32-bit_Arm_Cortex_-MF4_FM4_Microcontroller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c81fb7ad201821501ca6c7d04
CY9BF468NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.03125MB 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL128S11FHBV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL128S11FHBV20
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IS26KS512S-DPBLA300
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: HyperFlash
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-VFBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
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9024074AA
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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9023042AK
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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9023616AC
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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9021933
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY2548QIT download
CY2548QIT
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6J32BAKSESE2000A Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.112MB FLASH 208TQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.112MB (2.112M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 50x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TQFP (28x28)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4147AZSS598XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4147AZSS598XQLA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ESD3V3U1U-02LS E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LS E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD3V3U1U-02LS E6327 ESD3V3U1U.pdf
ESD3V3U1U-02LS E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 28VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.4pF @ 1GHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 28V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD5V0H1U-02LS E6327 ESD5V0H1U-02LS.pdf
ESD5V0H1U-02LS E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 5VWM 40VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.27pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: PG-TSSLP-2-1
Unidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 40V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD24VL1B-02LS E6327 ESD24VL1B+Series_rev_1_1ESD_Transient_Protection_Diode_Infineon.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a30433899edae01389eb4ba7d508e
ESD24VL1B-02LS E6327
Hersteller: Infineon Technologies
Description: TVS DIODE 24VWM 55VC TSSLP-2-1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 55V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B.pdf
ESD3V3S1B02LSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B.pdf
ESD3V3S1B02LSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD206B102ELSE6327XTSA1 ESD206-B1-02.pdf
ESD206B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.6VC TSSLP-2-3
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
Produkt ist nicht verfügbar
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PXE1410CDMG003XTMA1 448_PXE1410CDMG003XTMA1-1-20.pdf
PXE1410CDMG003XTMA1
Hersteller: Infineon Technologies
Description: IC CTLR PRIMARION 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+5.07 EUR
Mindestbestellmenge: 4000 Stücke
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PXE1410CDMG003XTMA1 448_PXE1410CDMG003XTMA1-1-20.pdf
PXE1410CDMG003XTMA1
Hersteller: Infineon Technologies
Description: IC CTLR PRIMARION 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 9632 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.26 EUR
10+7.04 EUR
25+6.5 EUR
100+5.89 EUR
250+5.62 EUR
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ETD630N18P60HPSA1 Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f
ETD630N18P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16800A, 20000A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 628 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 1.8 kV
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+455.23 EUR
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BBY 56-02W E6327 fundamentals-of-power-semiconductors
BBY 56-02W E6327
Hersteller: Infineon Technologies
Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
Produkt ist nicht verfügbar
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BSM10GP120BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 20A 100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
Produkt ist nicht verfügbar
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IM66D130AXTMA1 Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41
IM66D130AXTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Produkt ist nicht verfügbar
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IM66D130AXTMA1 Infineon-IM66D130A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c63d5f38c3a41
IM66D130AXTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.039" (0.99mm)
Voltage - Rated: 1.8 V
Current - Supply: 1.4 mA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
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8+2.76 EUR
10+2.63 EUR
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100+2.26 EUR
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CG7742AAT
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
Produkt ist nicht verfügbar
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CG7772AA
CG7772AA
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 100TQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Single Port, Synchronous, ZBT
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 2M x 36
Produkt ist nicht verfügbar
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CG8741AAT
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CG8941ATT
Hersteller: Infineon Technologies
Description: IC
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDB6HK180N22RRPB11BPSA1 Infineon-TDB6HK180N22RRP_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c7ba0a117017ba1ea2b8e039d
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Voltage - Off State: 2.2 kV
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - Gate Trigger (Igt) (Max): 70 mA
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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PTF180101S V1 ptf180101s_ds2a.pdf
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-32259-2
Packaging: Tape & Reel (TR)
Package / Case: H-32259-2
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.99GHz
Power - Output: 10W
Gain: 19dB
Technology: LDMOS
Supplier Device Package: H-32259-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 180 mA
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IPB100N10S305ATMA2 Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c
IPB100N10S305ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPP100N10S305AKSA2 Infineon-IPP_B_I100N10S3-DataSheet-v01_01-EN.pdf?fileId=db3a30431a5c32f2011a908bd4d8595c
IPP100N10S305AKSA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PXE1331CDNG003XTMA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PXE1331CDNG003XTMA1
Hersteller: Infineon Technologies
Description: IC CONTROLLER
Packaging: Cut Tape (CT)
auf Bestellung 3950 Stücke:
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2+11.19 EUR
10+10.04 EUR
25+9.5 EUR
100+8.23 EUR
250+7.81 EUR
500+7.01 EUR
1000+5.91 EUR
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FF225R17ME4B11BOSA1 Infineon-FF225R17ME4_B11-DS-v02_01-en_de.pdf?fileId=db3a30432fbc32ee012fbf631bc73a55
FF225R17ME4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 340A 1500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Produkt ist nicht verfügbar
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FF900R17ME7PB11BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Produkt ist nicht verfügbar
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FS225R17OE4PBOSA1
FS225R17OE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Bulk
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FS225R17OE4PBOSA1
FS225R17OE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE MED PWR ECONOPP-2
Packaging: Tray
Produkt ist nicht verfügbar
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FT150R12KE3B5BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE POWER
Packaging: Bulk
Produkt ist nicht verfügbar
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FZ1200R16KF4S1NOSA1 INFNS14535-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FZ1200R16 - INSULATED GATE BIPOL
Packaging: Bulk
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FZ1200R17KF6CB2NOSA1 FZ1200R17KF6C_B2_Rev2.1_2013-11-25.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.2kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 79 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1600R12KL4CNOSA1 FZ1600R12KL4C_Rev3.1_2013-10-02.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.6kA
NTC Thermistor: No
Current - Collector (Ic) (Max): 2450 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 10000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110 nF @ 25 V
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GATELEAD14231XPSA1
GATELEAD14231XPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD
Packaging: Tray
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GATELEAD14232XPSA1
GATELEAD14232XPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD
Packaging: Tray
auf Bestellung 4 Stücke:
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IPB096N03LGATMA1 IP%28B%2CP%29096N03L_G.pdf
IPB096N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP65R110CFDAAKSA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
IPP65R110CFDAAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Qualification: AEC-Q101
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IPA65R110CFDXKSA2 DS_IPX65R110CFD_2_61.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30433004641301306abd8e2041b1
IPA65R110CFDXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
auf Bestellung 113 Stücke:
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2+12.35 EUR
50+6.56 EUR
100+6 EUR
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ND104N18KHPSA1 INFNS29282-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 104A PB20-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 104A
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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