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CYPD717140LQXQTXUMA1 CYPD717140LQXQTXUMA1 Infineon Technologies Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
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3+5.97 EUR
10+4.51 EUR
25+4.14 EUR
100+3.74 EUR
250+3.55 EUR
500+3.43 EUR
1000+3.34 EUR
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CYPD717140LQXQXQLA1 CYPD717140LQXQXQLA1 Infineon Technologies Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
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3+5.97 EUR
10+4.51 EUR
25+4.14 EUR
100+3.74 EUR
490+3.44 EUR
980+3.34 EUR
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XDPE15284D0000XUMA1 XDPE15284D0000XUMA1 Infineon Technologies Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
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XDPE15284D0000XUMA1 XDPE15284D0000XUMA1 Infineon Technologies Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
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10+7.24 EUR
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100+6.09 EUR
250+5.8 EUR
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XMC6521SCQ040XXUMA1 Infineon Technologies Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCX5116H6433XTMA1 BCX5116H6433XTMA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
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BCX51H6327XTSA1 BCX51H6327XTSA1 Infineon Technologies infineon-bcx51-bcx52-bcx53-ds-en.pdf Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
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IRF2204SPBF IRF2204SPBF Infineon Technologies irf2204spbf.pdf?fileId=5546d462533600a4015355db5e2218d8 Description: MOSFET N-CH 40V 170A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
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TDA48632XKLA1 TDA48632XKLA1 Infineon Technologies tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 20 µA
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BSC152N15LS5ATMA1 BSC152N15LS5ATMA1 Infineon Technologies BSC152N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
Produkt ist nicht verfügbar
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BSC105N15LS5ATMA1 BSC105N15LS5ATMA1 Infineon Technologies BSC105N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
Produkt ist nicht verfügbar
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CY62128ELL-45SXI CY62128ELL-45SXI Infineon Technologies Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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5+3.56 EUR
10+3.33 EUR
25+3.24 EUR
50+3.16 EUR
100+3.09 EUR
250+2.99 EUR
500+2.92 EUR
1000+2.85 EUR
Mindestbestellmenge: 5
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IRS2011PBF IRS2011PBF Infineon Technologies INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
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140+3.25 EUR
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IGC18T120T8LX1SA2 IGC18T120T8LX1SA2 Infineon Technologies Infineon-IGC18T120T8L_L7633V-DS-v01_01-en.pdf?fileId=db3a3043382e83730138326238034b51 Description: IGBT TRENCH FIELD STOP 1200V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Produkt ist nicht verfügbar
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SKB15N60ATMA1 SKB15N60ATMA1 Infineon Technologies SKB15N60.pdf Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
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176+2.58 EUR
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CY91F587LBPMC-GTE1 CY91F587LBPMC-GTE1 Infineon Technologies download Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPS04N60C3BKMA1 SPS04N60C3BKMA1 Infineon Technologies SPS04N60C3.pdf Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 14621 Stücke:
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315+1.44 EUR
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BC860CE6359HTMA1 BC860CE6359HTMA1 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 100000 Stücke:
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BC860BWH6327XTSA1 BC860BWH6327XTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
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6234+0.076 EUR
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BC860CWH6327XTSA1 BC860CWH6327XTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 532000 Stücke:
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BC860BE6327HTSA1 BC860BE6327HTSA1 Infineon Technologies Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 380088 Stücke:
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6557+0.076 EUR
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CY7C1019CV33-12VC CY7C1019CV33-12VC Infineon Technologies CY7C1019CV33%20RevG.pdf Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167G18-55ZXIT CY62167G18-55ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTG70902EPLDAUGHBRDTOBO1 BTG70902EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
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1+77.4 EUR
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BTG70901EPLDAUGHBRDTOBO1 BTG70901EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
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1+77.4 EUR
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BTG70502EPLDAUGHBRDTOBO1 BTG70502EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
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BTG70501EPLDAUGHBRDTOBO1 BTG70501EPLDAUGHBRDTOBO1 Infineon Technologies Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73 Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
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FF450R17ME3BOSA1 FF450R17ME3BOSA1 Infineon Technologies Infineon-FF450R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d01145046701403b2 Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1500R33HE3S6BOSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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ISP25DP06NMXTSA1 ISP25DP06NMXTSA1 Infineon Technologies Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399 Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
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ISP25DP06NMXTSA1 ISP25DP06NMXTSA1 Infineon Technologies Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399 Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
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BAT6307WH6327XTSA1 BAT6307WH6327XTSA1 Infineon Technologies bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4 Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
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IPA60R145CFD7XKSA1 IPA60R145CFD7XKSA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
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AUIRL3705ZS AUIRL3705ZS Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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AUIRL3705ZS AUIRL3705ZS Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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IRFP4310ZPBFXKMA1 IRFP4310ZPBFXKMA1 Infineon Technologies Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
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2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 Infineon Technologies Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84 Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
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2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 Infineon Technologies Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84 Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
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10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
250+1.33 EUR
500+1.28 EUR
1000+1.24 EUR
2500+1.19 EUR
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CG10218AA Infineon Technologies Description: IC FRAM
Packaging: Tube
Memory Format: FRAM
Produkt ist nicht verfügbar
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CG10218AAT Infineon Technologies Description: IC FRAM
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Produkt ist nicht verfügbar
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BCP5116H6327XTSA1 BCP5116H6327XTSA1 Infineon Technologies bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9 Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
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BC848CE6433HTMA1 BC848CE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
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AUIRF3805 AUIRF3805 Infineon Technologies INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
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AUIRF3805L AUIRF3805L Infineon Technologies INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 160A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
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SPA21N50C3XKSA1 SPA21N50C3XKSA1 Infineon Technologies infineon-spp-i-a21n50c3-ds-v03-02-en.pdf Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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SP4001101XTMA1 SP4001101XTMA1 Infineon Technologies Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
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SP4001101XTMA1 SP4001101XTMA1 Infineon Technologies Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
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2+13.15 EUR
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MB9BFD18TPMC-GK7E1 MB9BFD18TPMC-GK7E1 Infineon Technologies Infineon-MB9BD10T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eded7cd63c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9180D32QKXUMA1 TLE9180D32QKXUMA1 Infineon Technologies Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
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TLE9180D32QKXUMA1 TLE9180D32QKXUMA1 Infineon Technologies Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256 Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
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2+9.8 EUR
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25+6.96 EUR
100+6.34 EUR
250+6.04 EUR
500+5.86 EUR
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CY9AFB44NBBGL-GK9E1 CY9AFB44NBBGL-GK9E1 Infineon Technologies Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608 Description: IC MCU 32BIT 288KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
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S29GL01GS10FHSS23 S29GL01GS10FHSS23 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS33 S29GL01GS10FHSS33 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS10FHSS30 S29GL01GS10FHSS30 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYAT81688-100AS61T CYAT81688-100AS61T Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+19.91 EUR
Mindestbestellmenge: 1500
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CYAT81688-100AS61T CYAT81688-100AS61T Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.89 EUR
10+28.59 EUR
25+26.51 EUR
100+24.23 EUR
250+23.14 EUR
500+22.49 EUR
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CYAT81688-100AS61ZT CYAT81688-100AS61ZT Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+21.68 EUR
Mindestbestellmenge: 1500
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CYAT81688-100AS61ZT CYAT81688-100AS61ZT Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.89 EUR
10+28.59 EUR
25+26.51 EUR
100+24.23 EUR
250+23.14 EUR
500+22.49 EUR
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CYAT81688-100AA71 Infineon Technologies Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.93 EUR
10+30.37 EUR
25+29 EUR
90+25.93 EUR
270+24.74 EUR
450+23.54 EUR
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CYAT81688-100AS61 CYAT81688-100AS61 Infineon Technologies CYAT8168x.pdf Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
1+29.52 EUR
10+22.87 EUR
25+21.21 EUR
90+19.91 EUR
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CYPD717140LQXQTXUMA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
CYPD717140LQXQTXUMA1
Hersteller: Infineon Technologies
Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
auf Bestellung 1831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+4.51 EUR
25+4.14 EUR
100+3.74 EUR
250+3.55 EUR
500+3.43 EUR
1000+3.34 EUR
Mindestbestellmenge: 3
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CYPD717140LQXQXQLA1 Infineon-CYPD7171_40LQXQ-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c8929aa4d018974ec9dc31d4d
CYPD717140LQXQXQLA1
Hersteller: Infineon Technologies
Description: EZ-PD CCG7SC SINGLE-PORT USB TYP
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: USB, Type-C Controller
Current - Supply: 50mA
Supplier Device Package: PG-VQFN-40-801
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+4.51 EUR
25+4.14 EUR
100+3.74 EUR
490+3.44 EUR
980+3.34 EUR
Mindestbestellmenge: 3
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XDPE15284D0000XUMA1 Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf
XDPE15284D0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
Produkt ist nicht verfügbar
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XDPE15284D0000XUMA1 Infineon-XDPE15284D-0000-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80027ecd018042f2425a00cf
XDPE15284D0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.42 EUR
10+7.24 EUR
25+6.69 EUR
100+6.09 EUR
250+5.8 EUR
500+5.63 EUR
Mindestbestellmenge: 2
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XMC6521SCQ040XXUMA1 Infineon-XMCxxxxSC-DataSheet-v02_50-EN.pdf?fileId=5546d46269e1c019016ae9db0eab1d6a
Hersteller: Infineon Technologies
Description: XMC1000 PG-VQFN-40
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCX5116H6433XTMA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX5116H6433XTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1853+0.24 EUR
Mindestbestellmenge: 1853
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BCX51H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
BCX51H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Qualification: AEC-Q101
auf Bestellung 61190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1292+0.35 EUR
Mindestbestellmenge: 1292
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IRF2204SPBF irf2204spbf.pdf?fileId=5546d462533600a4015355db5e2218d8
IRF2204SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 170A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 130A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
171+2.72 EUR
Mindestbestellmenge: 171
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TDA48632XKLA1 tda4863-2_v2-1.pdf?folderId=db3a304412b407950112b418029a24aa&fileId=db3a304412b407950112b41802de24ab
TDA48632XKLA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR DCM 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 12.5V ~ 20V
Mode: Discontinuous Conduction (DCM)
Supplier Device Package: PG-DIP-8
Current - Startup: 20 µA
auf Bestellung 12393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
429+1.06 EUR
Mindestbestellmenge: 429
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BSC152N15LS5ATMA1 BSC152N15LS5_Rev2.0_12-13-23.pdf
BSC152N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 29A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 60µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 75 V
Produkt ist nicht verfügbar
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BSC105N15LS5ATMA1 BSC105N15LS5_Rev2.0_12-13-23.pdf
BSC105N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 91µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
Produkt ist nicht verfügbar
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CY62128ELL-45SXI Infineon-CY62128E_MoBL_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe7dc7321d
CY62128ELL-45SXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+3.33 EUR
25+3.24 EUR
50+3.16 EUR
100+3.09 EUR
250+2.99 EUR
500+2.92 EUR
1000+2.85 EUR
Mindestbestellmenge: 5
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IRS2011PBF description INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
IRS2011PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1A, 1A
DigiKey Programmable: Not Verified
auf Bestellung 8900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
140+3.25 EUR
Mindestbestellmenge: 140
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IGC18T120T8LX1SA2 Infineon-IGC18T120T8L_L7633V-DS-v01_01-en.pdf?fileId=db3a3043382e83730138326238034b51
IGC18T120T8LX1SA2
Hersteller: Infineon Technologies
Description: IGBT TRENCH FIELD STOP 1200V DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 15A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Produkt ist nicht verfügbar
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SKB15N60ATMA1 SKB15N60.pdf
SKB15N60ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 31A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 570µJ
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
auf Bestellung 6373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+2.58 EUR
Mindestbestellmenge: 176
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CY91F587LBPMC-GTE1 download
CY91F587LBPMC-GTE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 104K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 111
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPS04N60C3BKMA1 SPS04N60C3.pdf
SPS04N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 14621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
315+1.44 EUR
Mindestbestellmenge: 315
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BC860CE6359HTMA1 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC860CE6359HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.046 EUR
Mindestbestellmenge: 8955
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BC860BWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC860BWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 68537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6234+0.076 EUR
Mindestbestellmenge: 6234
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BC860CWH6327XTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC860CWH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
auf Bestellung 532000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6234+0.076 EUR
Mindestbestellmenge: 6234
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BC860BE6327HTSA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
BC860BE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 380088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6557+0.076 EUR
Mindestbestellmenge: 6557
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CY7C1019CV33-12VC CY7C1019CV33%20RevG.pdf
CY7C1019CV33-12VC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167G18-55ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G18-55ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTG70902EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70902EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7090-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.4 EUR
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BTG70901EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70901EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7090-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7090-1EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.4 EUR
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BTG70502EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70502EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7050-2EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-2EPL
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+78.18 EUR
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BTG70501EPLDAUGHBRDTOBO1 Infineon-Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_10-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183c1e8e8367e73
BTG70501EPLDAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTG7050-1EPL DAUGH BRD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7050-1EPL
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.4 EUR
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FF450R17ME3BOSA1 Infineon-FF450R17ME3-DS-v02_01-en_de.pdf?fileId=db3a30431441fb5d01145046701403b2
FF450R17ME3BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 605A 2250W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 605 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 40.5 nF @ 25 V
Produkt ist nicht verfügbar
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FZ1500R33HE3S6BOSA1
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
Produkt ist nicht verfügbar
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ISP25DP06NMXTSA1 Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399
ISP25DP06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.51 EUR
2000+0.46 EUR
3000+0.44 EUR
Mindestbestellmenge: 1000
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ISP25DP06NMXTSA1 Infineon-ISP25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a072804fc7399
ISP25DP06NMXTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 3703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.56 EUR
Mindestbestellmenge: 10
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BAT6307WH6327XTSA1 bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4
BAT6307WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 3V 100MW SOT343
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SOT343-3D
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
auf Bestellung 88581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2358+0.2 EUR
Mindestbestellmenge: 2358
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IPA60R145CFD7XKSA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPA60R145CFD7XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Bulk
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
190+2.56 EUR
Mindestbestellmenge: 190
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AUIRL3705ZS auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
179+2.55 EUR
Mindestbestellmenge: 179
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AUIRL3705ZS auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFP4310ZPBFXKMA1 Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf
IRFP4310ZPBFXKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 75A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.037mA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 50 V
Produkt ist nicht verfügbar
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2EDL8033G4BXTMA1 Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84
2EDL8033G4BXTMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
Produkt ist nicht verfügbar
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2EDL8033G4BXTMA1 Infineon-2EDL8033G4B-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88704c7a01888faf64467e84
2EDL8033G4BXTMA1
Hersteller: Infineon Technologies
Description: INT. POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 3A, 6A
Technology: Magnetic Coupling
Current - Output High, Low: 3A, 6A
Supplier Device Package: PG-VDSON-8-5
Rise / Fall Time (Typ): 195ns, 106ns
Propagation Delay tpLH / tpHL (Max): 35ns, 35ns
Number of Channels: 2
Voltage - Output Supply: 8V ~ 17V
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
250+1.33 EUR
500+1.28 EUR
1000+1.24 EUR
2500+1.19 EUR
Mindestbestellmenge: 8
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CG10218AA
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tube
Memory Format: FRAM
Produkt ist nicht verfügbar
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CG10218AAT
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tape & Reel (TR)
Memory Format: FRAM
Produkt ist nicht verfügbar
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BCP5116H6327XTSA1 bcp51_bcp52_bcp53.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156ad4194521c9
BCP5116H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT223-4-24
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4-24
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1325+0.35 EUR
Mindestbestellmenge: 1325
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BC848CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC848CE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 30V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 330 mW
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7717+0.061 EUR
Mindestbestellmenge: 7717
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AUIRF3805 INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw
AUIRF3805
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
139+3.28 EUR
Mindestbestellmenge: 139
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AUIRF3805L INFN-S-A0008053181-1.pdf?t.download=true&u=5oefqw
AUIRF3805L
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 160A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 17404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
124+3.65 EUR
Mindestbestellmenge: 124
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SPA21N50C3XKSA1 infineon-spp-i-a21n50c3-ds-v03-02-en.pdf
SPA21N50C3XKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
103+4.45 EUR
Mindestbestellmenge: 103
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SP4001101XTMA1 Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d
SP4001101XTMA1
Hersteller: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Tape & Reel (TR)
Applications: Board Mount
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+7.68 EUR
Mindestbestellmenge: 1800
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SP4001101XTMA1 Infineon-SP400-11-01-DataSheet-v01_02-EN.pdf?fileId=5546d4627255dbad01725cf7597d6f5d
SP4001101XTMA1
Hersteller: Infineon Technologies
Description: IC TPMS & INERTIA 24DSOSP
Packaging: Cut Tape (CT)
Applications: Board Mount
auf Bestellung 2441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.15 EUR
10+10.19 EUR
25+9.44 EUR
100+8.63 EUR
250+8.24 EUR
500+8.01 EUR
Mindestbestellmenge: 2
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MB9BFD18TPMC-GK7E1 Infineon-MB9BD10T_Series_32-Bit_Arm_Cortex_-M3_FM3_Microcontroller-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eded7cd63c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
MB9BFD18TPMC-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9180D32QKXUMA1 Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256
TLE9180D32QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9180D32QKXUMA1 Infineon-TLE9180D-32QK-DataSheet-v01_21-EN.pdf?fileId=8ac78c8c8900bb570189068f6eb32256
TLE9180D32QKXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 64LQFP
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 60V
Supplier Device Package: PG-LQFP-64-27
Rise / Fall Time (Typ): 35ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 2A
DigiKey Programmable: Not Verified
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.8 EUR
10+7.53 EUR
25+6.96 EUR
100+6.34 EUR
250+6.04 EUR
500+5.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY9AFB44NBBGL-GK9E1 Infineon-CY9AB40NB_Series_32_bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee06c916608
CY9AFB44NBBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 112BGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 112-PFBGA (10x10)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS10FHSS23 PdfFile_133368.pdf
S29GL01GS10FHSS23
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS10FHSS33 PdfFile_133368.pdf
S29GL01GS10FHSS33
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS10FHSS30 PdfFile_133368.pdf
S29GL01GS10FHSS30
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYAT81688-100AS61T CYAT8168x.pdf
CYAT81688-100AS61T
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+19.91 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
CYAT81688-100AS61T CYAT8168x.pdf
CYAT81688-100AS61T
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.89 EUR
10+28.59 EUR
25+26.51 EUR
100+24.23 EUR
250+23.14 EUR
500+22.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYAT81688-100AS61ZT CYAT8168x.pdf
CYAT81688-100AS61ZT
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+21.68 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
CYAT81688-100AS61ZT CYAT8168x.pdf
CYAT81688-100AS61ZT
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.89 EUR
10+28.59 EUR
25+26.51 EUR
100+24.23 EUR
250+23.14 EUR
500+22.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYAT81688-100AA71 Infineon-CYAT81682-100AA61Z-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837edabc100b8b
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.93 EUR
10+30.37 EUR
25+29 EUR
90+25.93 EUR
270+24.74 EUR
450+23.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYAT81688-100AS61 CYAT8168x.pdf
CYAT81688-100AS61
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 897 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.52 EUR
10+22.87 EUR
25+21.21 EUR
90+19.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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