Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126531) > Seite 717 nach 2109
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IRGS4062DTRLPBF | Infineon Technologies |
Description: IGBT TRENCH 600V 48A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: PG-TO263-3 IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IRF7458PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 10V, 16V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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S25FL256SDPMFV000 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 66 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CY8C4247AZS-M485T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 24x12b SAR; D/A 4x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 51 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TLE82092EXUMA2 | Infineon Technologies |
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSOPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 8.6A Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.4V ~ 5.25V Technology: Power MOSFET Voltage - Load: 4.5V ~ 28V Supplier Device Package: PG-DSO-20-65 Motor Type - AC, DC: Brushed DC Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BTT60201ERAXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 20mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2237 Stücke: Lieferzeit 10-14 Tag (e) |
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KP276D1201XTMA1 | Infineon Technologies |
Description: SENSOR 58.02PSIA 12BIT DSOF8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 8-SMD Module Output Type: SENT Mounting Type: Surface Mount Output: 12 b Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa) Pressure Type: Absolute Accuracy: ±0.77% Operating Temperature: -40°C ~ 150°C Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: PG-DSOF-8-162 Port Style: No Port Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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CYT4DNJBMCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHPackaging: Tray Package / Case: 327-LFBGA Mounting Type: Surface Mount Speed: 100MHz, 320MHz Program Memory Size: 6.19MB (6.19M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-FBGA (17x17) Number of I/O: 168 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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S25HL01GTFAMHB010 | Infineon Technologies |
Description: IC FLASH 1GBIT SPI/QUAD 16SOICDigiKey Programmable: Not Verified Memory Organization: 128M x 8 Memory Interface: SPI - Quad I/O, QPI Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tray |
auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
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S25HL01GTFAMHB013 | Infineon Technologies |
Description: IC FLASH 1GBIT SPI/QUAD 16SOICDigiKey Programmable: Not Verified Memory Organization: 128M x 8 Memory Interface: SPI - Quad I/O, QPI Supplier Device Package: 16-SOIC Memory Format: FLASH Clock Frequency: 166 MHz Technology: FLASH - NOR (SLC) Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FM22L16-55-TGTR | Infineon Technologies |
Description: IC FRAM 4MBIT PARALLEL 44TSOP IIPackaging: Cut Tape (CT) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 110ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
auf Bestellung 1198 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE42632GMXUMA1 | Infineon Technologies |
Description: IC REG LIN 5V 180MA PG-DSO-14-61Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 180mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-61 Voltage - Output (Min/Fixed): 5V Control Features: Delay, Inhibit, Reset Output, Watchdog Grade: Automotive Protection Features: Over Temperature, Reverse Polarity, Short Circuit Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TLE42632GSXUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 180MA 8DSO-62Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 180mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-8-62 Voltage - Output (Min/Fixed): 5V Control Features: Delay, Inhibit, Reset Output, Watchdog Grade: Automotive Protection Features: Over Temperature, Reverse Polarity, Short Circuit Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IPA65R150CFDXKSA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 22.4A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Power Dissipation (Max): 34.7W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 900µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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CYT4DNJBCCQ1BZSGS | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHPackaging: Tray Package / Case: 327-LFBGA Mounting Type: Surface Mount Speed: 100MHz, 320MHz Program Memory Size: 6.19MB (6.19M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-FBGA (17x17) Number of I/O: 168 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CYT4DNJBCCQ1BZSGST | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPHPackaging: Tape & Reel (TR) Package / Case: 327-LFBGA Mounting Type: Surface Mount Speed: 100MHz, 320MHz Program Memory Size: 6.19MB (6.19M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Data Converters: A/D 48x12b SAR Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-FBGA (17x17) Number of I/O: 168 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FF1500R12IE5BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 1500A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1500A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1500 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 82 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CY8C4125PVE-S412 | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 28SSOP Packaging: Tube Package / Case: 28-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 28-SSOP Grade: Automotive Number of I/O: 24 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 940 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CY8C4147AZS-S475T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64LQFP Qualification: AEC-Q100 Number of I/O: 54 Grade: Automotive Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16, 20x10/12b SAR Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CY8C24423A-24LTXIT | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 32QFNPackaging: Cut Tape (CT) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 10x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 24 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C24423A-24LFXI | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 32QFNPackaging: Tube Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 10x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 24 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CY3250-20SSOP-FK | Infineon Technologies |
Description: PSOC POD FEET FOR 20-SSOP Packaging: Bulk For Use With/Related Products: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI Accessory Type: 4 Emulation Pods Utilized IC / Part: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IPP60R037CM8XKSA1 | Infineon Technologies |
Description: IPP60R037CM8XKSA1Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tj) Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 680µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V |
auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP018N03LF2SAKSA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 110µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V |
auf Bestellung 1877 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD06P003NATMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 22A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.04mA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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S29GL512T10TFI040 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 268 Stücke: Lieferzeit 10-14 Tag (e) |
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IM64D121AXTMA1 | Infineon Technologies |
Description: XENSIV - IM64D121A AUTOMOTIVE MEPackaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -26dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 64dB Termination: Solder Pads Direction: Omnidirectional Ratings: IP57 - Dust Protected, Waterproof Port Location: Bottom Height (Max): 0.043" (1.08mm) Grade: Automotive Voltage - Rated: 1.8 V Current - Supply: 1.4 A Voltage Range: 1.62 V ~ 3.6 V Frequency Range: 10 Hz ~ 10 kHz Qualification: AEC-Q103 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IM64D121AXTMA1 | Infineon Technologies |
Description: XENSIV - IM64D121A AUTOMOTIVE MEPackaging: Cut Tape (CT) Output Type: Digital, PDM Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm) Sensitivity: -26dB ±1dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 64dB Termination: Solder Pads Direction: Omnidirectional Ratings: IP57 - Dust Protected, Waterproof Port Location: Bottom Height (Max): 0.043" (1.08mm) Grade: Automotive Voltage - Rated: 1.8 V Current - Supply: 1.4 A Voltage Range: 1.62 V ~ 3.6 V Frequency Range: 10 Hz ~ 10 kHz Qualification: AEC-Q103 |
auf Bestellung 3681 Stücke: Lieferzeit 10-14 Tag (e) |
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| ESD160B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| ESD160B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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CYTVII-B-H-8M-176-CPU | Infineon Technologies |
Description: CPU_BOARD FOR TVII-B-H-4M-176Packaging: Bulk Mounting Type: Socket Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M7 Utilized IC / Part: CYT4BF |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA60R1K5CEXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 5A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TLE49SRC8XUMA1 | Infineon Technologies |
Description: POSITION SENSORSFeatures: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: SPC Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: 20mT ~ 90mT Current - Output (Max): 120µA Current - Supply (Max): 16.5mA Supplier Device Package: PG-TDSO-8-1 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLE49SRC8XUMA1 | Infineon Technologies |
Description: POSITION SENSORSFeatures: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: SPC Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: 20mT ~ 90mT Current - Output (Max): 120µA Current - Supply (Max): 16.5mA Supplier Device Package: PG-TDSO-8-1 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE49SRP8XUMA1 | Infineon Technologies |
Description: POSITION SENSORSFeatures: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: PWM Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: 20mT ~ 90mT Current - Output (Max): 120µA Current - Supply (Max): 16.5mA Supplier Device Package: PG-TDSO-8-1 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TLE49SRP8XUMA1 | Infineon Technologies |
Description: POSITION SENSORSFeatures: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: PWM Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: 20mT ~ 90mT Current - Output (Max): 120µA Current - Supply (Max): 16.5mA Supplier Device Package: PG-TDSO-8-1 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL128S10GHB013 | Infineon Technologies |
Description: IC FLASH 128MBIT CFI 56FBGAPackaging: Cut Tape (CT) Package / Case: 56-VFBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 56-FBGA (9x7) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: CFI Access Time: 100 ns Memory Organization: 16M x 8 Qualification: AEC-Q100 |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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IPP020N03LF2SAKSA1 | Infineon Technologies |
Description: TRENCH <= 40VInput Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO220-3-U05 Vgs(th) (Max) @ Id: 2.35V @ 80µA Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 125A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD5098EPVSEPICTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD5098EPPackaging: Bulk Voltage - Output: 12V Voltage - Input: 8V ~ 27V Current - Output: 1A Contents: Board(s) Frequency - Switching: 400kHz Regulator Topology: Buck-Boost Board Type: Fully Populated Utilized IC / Part: TLD5098EP Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up or Down Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IMT65R107M1HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: SiCFET (Silicon Carbide) Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IMT65R107M1HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: SiCFET (Silicon Carbide) Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 2211 Stücke: Lieferzeit 10-14 Tag (e) |
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ETD540N22P60XPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 700A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 135°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 542 A Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (RMS)) (Max): 700 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| FD401R17KF6CB2NOSA1 | Infineon Technologies |
Description: FD401R17 - IGBT MODULEPackaging: Bulk |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPAP111A3-10SXQT | Infineon Technologies |
Description: PRIMARY SIDE STARTUP CONTROLLERPackaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width) Output Connector: USB Micro Mounting Type: Surface Mount Voltage - Input: 85 ~ 265 VAC Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 70% Frequency - Switching: 30kHz Input Type: Fixed Blade Internal Switch(s): No Voltage - Breakdown: 500V Form: Wall Mount (Class II) Output Isolation: Isolated Topology: Flyback, Secondary Side SR Voltage - Supply (Vcc/Vdd): 85V ~ 265V Supplier Device Package: 10-SOIC Input Connector: NEMA 1-15P Region Utilized: North America Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO Control Features: Frequency Control, Soft Start |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR420UE6433HTMA1 | Infineon Technologies |
Description: IC LED DRIVER LINEAR 65MA SC74-6Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: Lighting Current - Output / Channel: 65mA Internal Switch(s): Yes Supplier Device Package: PG-SC74-6 Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BCR420UE6433HTMA1 | Infineon Technologies |
Description: IC LED DRIVER LINEAR 65MA SC74-6Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Applications: Lighting Current - Output / Channel: 65mA Internal Switch(s): Yes Supplier Device Package: PG-SC74-6 Voltage - Supply (Max): 40V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 11007 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA082N10NF2SXKSA1 | Infineon Technologies |
Description: TRENCH >=100V PG-TO220-3Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 46µA Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
auf Bestellung 7028 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS700121ESPXUMA2 | Infineon Technologies |
Description: PROFET PG-TSDSO-24Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1.4mOhm Input Type: Non-Inverting Voltage - Load: 4.1V ~ 28V Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V Current - Output (Max): 31.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-24-32 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSC026N02KSGAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 25A/100A TDSONPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
auf Bestellung 26892 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL01GS11FHIV13 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 16 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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S29GL01GS11FHIV13 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAMemory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Memory Organization: 64M x 16 Access Time: 110 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 64-FBGA (13x11) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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IR2308SPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IR2308PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CY8C4126AZI-M475 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64TQFPDigiKey Programmable: Not Verified Number of I/O: 51 Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b SAR; 2xIDAC Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 320 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IAUTN06S5N008GATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-HSOG-8-1 Power Dissipation (Max): 358W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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IAUTN06S5N008GATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-HSOG-8-1 Power Dissipation (Max): 358W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 1647 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUTN06S5N008ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Grade: Automotive Supplier Device Package: PG-HSOF-8-1 Power Dissipation (Max): 258W (Tc) Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUTN06S5N008ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V)Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V Power Dissipation (Max): 258W (Tc) Supplier Device Package: PG-HSOF-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 5933 Stücke: Lieferzeit 10-14 Tag (e) |
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| S6BP401AM2SN1B200 | Infineon Technologies |
Description: PMIC AUTO ANALOGPackaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| FS200R07A02E3S6BKSA3 | Infineon Technologies |
Description: HYBRID PACK DSC SIPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A NTC Thermistor: Yes Supplier Device Package: PG-MDIP-28 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 700 V Power - Max: 694 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 13500 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRGS4062DTRLPBF |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Description: IGBT TRENCH 600V 48A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF7458PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S25FL256SDPMFV000 |
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Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4247AZS-M485T |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 24x12b SAR; D/A 4x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 51
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| TLE82092EXUMA2 |
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Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Description: IC MOTOR DRIVER 4.4V-5.25V 20DSO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.6A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.4V ~ 5.25V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 28V
Supplier Device Package: PG-DSO-20-65
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Produkt ist nicht verfügbar
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| BTT60201ERAXUMA1 |
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Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWITCH N-CHAN 1:1 TDSO-14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.33 EUR |
| 10+ | 4.74 EUR |
| 25+ | 4.34 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.71 EUR |
| 500+ | 3.67 EUR |
| KP276D1201XTMA1 |
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Hersteller: Infineon Technologies
Description: SENSOR 58.02PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR 58.02PSIA 12BIT DSOF8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Output Type: SENT
Mounting Type: Surface Mount
Output: 12 b
Operating Pressure: 1.45 ~ 58.02PSI (10kPa ~ 400kPa)
Pressure Type: Absolute
Accuracy: ±0.77%
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: PG-DSOF-8-162
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 6.4 EUR |
| CYT4DNJBMCQ1BZSGS |
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Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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| S25HL01GTFAMHB010 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.5 EUR |
| 10+ | 38.44 EUR |
| 25+ | 37.24 EUR |
| 50+ | 36.32 EUR |
| 240+ | 34.3 EUR |
| S25HL01GTFAMHB013 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT SPI/QUAD 16SOIC
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Memory Interface: SPI - Quad I/O, QPI
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 166 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| FM22L16-55-TGTR |
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Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC FRAM 4MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 83.17 EUR |
| 10+ | 76.89 EUR |
| 25+ | 74.41 EUR |
| 50+ | 72.57 EUR |
| 100+ | 70.73 EUR |
| 250+ | 68.37 EUR |
| TLE42632GMXUMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| TLE42632GSXUMA1 |
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Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| IPA65R150CFDXKSA2 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
Description: MOSFET N-CH 650V 22.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.71 EUR |
| 50+ | 4.49 EUR |
| 100+ | 4.07 EUR |
| CYT4DNJBCCQ1BZSGS |
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Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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| CYT4DNJBCCQ1BZSGST |
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Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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| FF1500R12IE5BPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
Description: IGBT MODULE 1200V 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 1500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 82 nF @ 25 V
Produkt ist nicht verfügbar
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| CY8C4125PVE-S412 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tube
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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| CY8C4147AZS-S475T |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16, 20x10/12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16, 20x10/12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| CY8C24423A-24LTXIT |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 8.35 EUR |
| 25+ | 7.72 EUR |
| 100+ | 7.02 EUR |
| 250+ | 6.69 EUR |
| 500+ | 6.49 EUR |
| 1000+ | 6.32 EUR |
| CY8C24423A-24LFXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tube
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CY3250-20SSOP-FK |
Hersteller: Infineon Technologies
Description: PSOC POD FEET FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI
Accessory Type: 4 Emulation Pods
Utilized IC / Part: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI
Description: PSOC POD FEET FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI
Accessory Type: 4 Emulation Pods
Utilized IC / Part: CY3215-DK, CY8C21334-24PVXI, CY8C21323-24PVXI, CY8C27243-24PVXI, CY8C24423A-24PVXI
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IPP60R037CM8XKSA1 |
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Hersteller: Infineon Technologies
Description: IPP60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
Description: IPP60R037CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.89 EUR |
| 50+ | 8.03 EUR |
| 100+ | 7.38 EUR |
| 500+ | 6.22 EUR |
| IPP018N03LF2SAKSA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 110µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 110µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
auf Bestellung 1877 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.71 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.18 EUR |
| IPD06P003NATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| S29GL512T10TFI040 |
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Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.24 EUR |
| 10+ | 16.95 EUR |
| 25+ | 16.42 EUR |
| 91+ | 15.7 EUR |
| 182+ | 15.3 EUR |
| IM64D121AXTMA1 |
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Hersteller: Infineon Technologies
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
Produkt ist nicht verfügbar
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| IM64D121AXTMA1 |
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Hersteller: Infineon Technologies
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
auf Bestellung 3681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.62 EUR |
| 10+ | 2.14 EUR |
| 25+ | 1.96 EUR |
| 50+ | 1.86 EUR |
| 100+ | 1.74 EUR |
| 250+ | 1.64 EUR |
| ESD160B1W0201E6327XTSA1 |
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| CYTVII-B-H-8M-176-CPU |
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Hersteller: Infineon Technologies
Description: CPU_BOARD FOR TVII-B-H-4M-176
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
Description: CPU_BOARD FOR TVII-B-H-4M-176
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1734.77 EUR |
| IPA60R1K5CEXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| TLE49SRC8XUMA1 |
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Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLE49SRC8XUMA1 |
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Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.8 EUR |
| 5+ | 11.64 EUR |
| 10+ | 10.81 EUR |
| 25+ | 9.81 EUR |
| 50+ | 9.12 EUR |
| 100+ | 8.47 EUR |
| TLE49SRP8XUMA1 |
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Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| TLE49SRP8XUMA1 |
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Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.47 EUR |
| 5+ | 11.35 EUR |
| 10+ | 10.56 EUR |
| 25+ | 9.58 EUR |
| 50+ | 8.9 EUR |
| 100+ | 8.27 EUR |
| S29GL128S10GHB013 |
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Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT CFI 56FBGA
Packaging: Cut Tape (CT)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 100 ns
Memory Organization: 16M x 8
Qualification: AEC-Q100
Description: IC FLASH 128MBIT CFI 56FBGA
Packaging: Cut Tape (CT)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 100 ns
Memory Organization: 16M x 8
Qualification: AEC-Q100
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.46 EUR |
| 10+ | 17.16 EUR |
| 25+ | 16.64 EUR |
| 50+ | 16.24 EUR |
| 100+ | 15.85 EUR |
| 250+ | 15.34 EUR |
| 500+ | 14.95 EUR |
| 1000+ | 14.57 EUR |
| IPP020N03LF2SAKSA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.25 EUR |
| TLD5098EPVSEPICTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 8V ~ 27V
Current - Output: 1A
Contents: Board(s)
Frequency - Switching: 400kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD5098EP
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 8V ~ 27V
Current - Output: 1A
Contents: Board(s)
Frequency - Switching: 400kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 163.83 EUR |
| IMT65R107M1HXUMA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 4.07 EUR |
| IMT65R107M1HXUMA1 |
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Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.56 EUR |
| 10+ | 7.06 EUR |
| 100+ | 5.07 EUR |
| 500+ | 4.97 EUR |
| ETD540N22P60XPSA1 |
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Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FD401R17KF6CB2NOSA1 |
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auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1605.99 EUR |
| CYPAP111A3-10SXQT |
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Hersteller: Infineon Technologies
Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Connector: USB Micro
Mounting Type: Surface Mount
Voltage - Input: 85 ~ 265 VAC
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Input Type: Fixed Blade
Internal Switch(s): No
Voltage - Breakdown: 500V
Form: Wall Mount (Class II)
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Input Connector: NEMA 1-15P
Region Utilized: North America
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Connector: USB Micro
Mounting Type: Surface Mount
Voltage - Input: 85 ~ 265 VAC
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Input Type: Fixed Blade
Internal Switch(s): No
Voltage - Breakdown: 500V
Form: Wall Mount (Class II)
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Input Connector: NEMA 1-15P
Region Utilized: North America
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 12+ | 1.77 EUR |
| 25+ | 1.61 EUR |
| 100+ | 1.42 EUR |
| 250+ | 1.33 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.23 EUR |
| BCR420UE6433HTMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR420UE6433HTMA1 |
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Hersteller: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11007 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 50+ | 0.42 EUR |
| 57+ | 0.37 EUR |
| 100+ | 0.32 EUR |
| 250+ | 0.3 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.27 EUR |
| 2500+ | 0.26 EUR |
| 5000+ | 0.25 EUR |
| IPA082N10NF2SXKSA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: TRENCH >=100V PG-TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 7028 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 220+ | 2.49 EUR |
| BTS700121ESPXUMA2 |
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Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.88 EUR |
| 10+ | 5.96 EUR |
| 25+ | 5.49 EUR |
| 100+ | 4.96 EUR |
| 250+ | 4.71 EUR |
| 500+ | 4.69 EUR |
| BSC026N02KSGAUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
auf Bestellung 26892 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 363+ | 1.56 EUR |
| S29GL01GS11FHIV13 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1600+ | 18.89 EUR |
| S29GL01GS11FHIV13 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.73 EUR |
| 10+ | 24.6 EUR |
| 25+ | 23.45 EUR |
| 50+ | 22.62 EUR |
| 100+ | 21.82 EUR |
| 250+ | 20.8 EUR |
| 500+ | 20.06 EUR |
| IR2308SPBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2308PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4126AZI-M475 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 320 Stücke
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| IAUTN06S5N008GATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOG-8-1
Power Dissipation (Max): 358W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: MOSFET_)40V 60V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOG-8-1
Power Dissipation (Max): 358W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
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| IAUTN06S5N008GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOG-8-1
Power Dissipation (Max): 358W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
Description: MOSFET_)40V 60V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOG-8-1
Power Dissipation (Max): 358W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 1647 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.9 EUR |
| 10+ | 6.72 EUR |
| 100+ | 5.93 EUR |
| IAUTN06S5N008ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-8-1
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET_)40V 60V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOF-8-1
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 4.44 EUR |
| IAUTN06S5N008ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 258W (Tc)
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.76mOhm @ 100A, 10V
Power Dissipation (Max): 258W (Tc)
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 5933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.39 EUR |
| 10+ | 7.52 EUR |
| 100+ | 5.44 EUR |
| FS200R07A02E3S6BKSA3 |
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Hersteller: Infineon Technologies
Description: HYBRID PACK DSC SI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: PG-MDIP-28
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 694 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 13500 pF @ 25 V
Description: HYBRID PACK DSC SI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: PG-MDIP-28
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 694 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 13500 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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