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1EDI10I12MFXUMA1 1EDI10I12MFXUMA1 Infineon Technologies Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7 Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
auf Bestellung 5068 Stücke:
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373+1.33 EUR
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2SC0435T2F117HPSA1 Infineon Technologies Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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FP25R12W2T4BOMA1 Infineon Technologies Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c Description: FP25R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 14 Stücke:
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7+83.17 EUR
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FS300R17OE4B61BPSA1 Infineon Technologies Description: FS300R17OE4 - IGBT Module
Packaging: Bulk
auf Bestellung 1 Stücke:
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1+1087.75 EUR
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IQD005N04NM6CGSCATMA1 IQD005N04NM6CGSCATMA1 Infineon Technologies Infineon-IQD005N04NM6CGSC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169e6d0105447 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQD005N04NM6CGSCATMA1 IQD005N04NM6CGSCATMA1 Infineon Technologies Infineon-IQD005N04NM6CGSC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169e6d0105447 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQD005N04NM6SCATMA1 IQD005N04NM6SCATMA1 Infineon Technologies Infineon-IQD005N04NM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169effe56544b Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQD005N04NM6SCATMA1 IQD005N04NM6SCATMA1 Infineon Technologies Infineon-IQD005N04NM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169effe56544b Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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FS25R12W1T4BOMA1 FS25R12W1T4BOMA1 Infineon Technologies Infineon-FS25R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4c47b490549 Description: IGBT MOD 1200V 45A 205W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 15 Stücke:
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10+53.45 EUR
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FF1800R17IP5BPSA1 FF1800R17IP5BPSA1 Infineon Technologies Infineon-FF1800R17IP5-DS-v03_02-EN.pdf?fileId=5546d46254e133b4015524ccc42d021b Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
Produkt ist nicht verfügbar
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6EDL04N03PRXUMA1 6EDL04N03PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N03PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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3000+2.3 EUR
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6EDL04N03PRXUMA1 6EDL04N03PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N03PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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5+3.7 EUR
6+3.29 EUR
10+3.14 EUR
25+2.96 EUR
50+2.84 EUR
100+2.73 EUR
500+2.5 EUR
1000+2.42 EUR
Mindestbestellmenge: 5
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S25FS064SDSBHM020 S25FS064SDSBHM020 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412 Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS064SDSBHM023 S25FS064SDSBHM023 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412 Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2309ZXI-1HT CY2309ZXI-1HT Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2292FXIT CY2292FXIT Infineon Technologies Infineon-CY2292_Three_PLL_General_Purpose_EPROM_Programmable_Clock_Generator-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcdc6c2eac&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC CLOCK GENERATOR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 60MHz, 80MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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CY62147EV30LL-45BVXIT CY62147EV30LL-45BVXIT Infineon Technologies CY62147EV30_MoBL_RevT_6-26-20.pdf Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62147EV30LL-45BVXIT CY62147EV30LL-45BVXIT Infineon Technologies CY62147EV30_MoBL_RevT_6-26-20.pdf Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1634 Stücke:
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2+9.38 EUR
10+8.32 EUR
25+7.94 EUR
50+7.66 EUR
100+7.39 EUR
250+7.05 EUR
500+6.8 EUR
1000+6.56 EUR
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CY62157EV30LL-45ZXIT CY62157EV30LL-45ZXIT Infineon Technologies Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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1000+15.8 EUR
Mindestbestellmenge: 1000
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CY62157EV30LL-45ZXIT CY62157EV30LL-45ZXIT Infineon Technologies Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1385 Stücke:
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1+19.52 EUR
10+18.1 EUR
25+17.54 EUR
50+17.12 EUR
100+16.7 EUR
250+16.37 EUR
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CY7C1021CV33-10ZSXA CY7C1021CV33-10ZSXA Infineon Technologies Infineon-CY7C1021CV33_Automotive_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd0e5e2f13&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019D-10ZSXIT CY7C1019D-10ZSXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
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150+6.76 EUR
Mindestbestellmenge: 150
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CY7C1019D-10ZSXIT CY7C1019D-10ZSXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3178 Stücke:
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71+6.92 EUR
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CY7C1019D-10VXIT CY7C1019D-10VXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2246 Stücke:
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750+6.71 EUR
1500+6.47 EUR
Mindestbestellmenge: 750
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CY7C1019D-10VXIT CY7C1019D-10VXIT Infineon Technologies Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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2+9.45 EUR
10+8.39 EUR
25+8 EUR
50+7.72 EUR
100+7.45 EUR
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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CY8C29466-24SXIT CY8C29466-24SXIT Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
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100+16.44 EUR
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DEMOBOARDTLD1125ELTOBO1 DEMOBOARDTLD1125ELTOBO1 Infineon Technologies Description: DEMOBOARD TLD1125EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 180mA
Utilized IC / Part: TLD1125EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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CY8CTMA1036AA-13T CY8CTMA1036AA-13T Infineon Technologies Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
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CY8CTMA1036AA-13 CY8CTMA1036AA-13 Infineon Technologies Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
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CY3290-TMA1036A Infineon Technologies Description: DEVELOPMENT KIT
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Utilized IC / Part: TMA1036A
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CY8CTMA1036AA-33 Infineon Technologies Description: IC SCREEN CTRLR TRUETOUCH 100QFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFV013 S25FL128SAGMFV013 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
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DEMOBOARDTLD1313ELTOBO1 Infineon Technologies Description: DEMOBOARD TLD1313EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 120mA
Utilized IC / Part: TLD1313EL
Supplied Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
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D1821SH45TPRXPSA1 D1821SH45TPRXPSA1 Infineon Technologies D1821SH.pdf Description: DIODE STANDARD 4500V 2210A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2210A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
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LWLR10LR87L3000HPSA1 LWLR10LR87L3000HPSA1 Infineon Technologies Infineon-LIGHT%20FIBER%20LWL%20R10-LR87-DS-v02_01-EN.pdf?fileId=5546d462525dbac401532cafdddc74d1 Description: FIBER OPTIC CBL 3M
Packaging: Tray
Cable Diameter: 0.11" (2.8mm), 0.12" (3.0mm)
Length - Overall: 9.8' (3.0m)
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IFS100V12PT4BOSA1 Infineon Technologies IFS100V12PT4.pdf Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 65°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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CYW15G0403DXB-BGI CYW15G0403DXB-BGI Infineon Technologies Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 256-L2BGA (27x27)
Number of Circuits: 4
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EVALBGA123N6TOBO1 EVALBGA123N6TOBO1 Infineon Technologies Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4 Description: EVAL BGA123N6
Packaging: Bulk
For Use With/Related Products: BGA123N6
Frequency: 1.55GHz ~ 1.615GHz
Type: Amplifier
Supplied Contents: Board(s)
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EVALBGA125N6TOBO1 EVALBGA125N6TOBO1 Infineon Technologies Infineon-BGA125N6-DataSheet-v02_05-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7 Description: EVAL BGA125N6
Packaging: Bulk
For Use With/Related Products: BGA125N6
Frequency: 1.164GHz ~ 1.3GHz
Type: Amplifier
Supplied Contents: Board(s)
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IR3622MTRPBF IR3622MTRPBF Infineon Technologies IR3622MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
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IR3622MTRPBF IR3622MTRPBF Infineon Technologies IR3622MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
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IR3622MTRPBF IR3622MTRPBF Infineon Technologies IR3622MPbF.pdf Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
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CY2DL814ZXI CY2DL814ZXI Infineon Technologies cy2dl814_8.pdf Description: IC CLK BUFFER 1:4 400MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 400 MHz
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BC857SH6827XTSA1 BC857SH6827XTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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BC857SH6827XTSA1 BC857SH6827XTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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SPOC2DBBTS712204ESATOBO1 SPOC2DBBTS712204ESATOBO1 Infineon Technologies Description: SPOC-2 DB BTS71220-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESA
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BTS71202EPADAUGHBRDTOBO1 BTS71202EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7120-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d462636cc8fb016421dc08d31138 Description: BTS7120-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7120-2EPA
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T880N16TOFXPSA1 T880N16TOFXPSA1 Infineon Technologies Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8 Description: SCR MODULE 1800V 1750A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 880 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1750 A
Voltage - Off State: 1.8 kV
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FS225R12OE4BOSA1 FS225R12OE4BOSA1 Infineon Technologies Infineon-FS225R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff90136ab5334d94ca0 Description: IGBT MOD 1200V 350A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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XMC7100-E272K4160AA XMC7100-E272K4160AA Infineon Technologies Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415 Description: IC MCU 32BIT 4.06MB 272LFBGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 207
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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11+1.69 EUR
18+1 EUR
100+0.75 EUR
500+0.67 EUR
1000+0.63 EUR
Mindestbestellmenge: 11
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CY7C65620-56LFXCT CY7C65620-56LFXCT Infineon Technologies download Description: IC USB HUB CTRLR 2PORT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
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S29GL01GS11FHB020 S29GL01GS11FHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BB644E7904HTSA1 BB644E7904HTSA1 Infineon Technologies bb644_bb664series.pdf Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
Produkt ist nicht verfügbar
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IRS21531DPBF IRS21531DPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
auf Bestellung 6044 Stücke:
Lieferzeit 10-14 Tag (e)
143+3.17 EUR
Mindestbestellmenge: 143
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DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5 Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
4+133.5 EUR
Mindestbestellmenge: 4
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FP15R12W1T7B3BOMA1 FP15R12W1T7B3BOMA1 Infineon Technologies Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
10+54.47 EUR
Mindestbestellmenge: 10
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1EDI10I12MFXUMA1 Infineon-1EDIXXI12MF-DS-v02_00-EN.pdf?fileId=5546d46145f1f3a401462944e0190fd7
1EDI10I12MFXUMA1
Hersteller: Infineon Technologies
Description: DIGITAL ISO 1CH GATE DVR DSO8-51
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Magnetic Coupling
Supplier Device Package: PG-DSO-8-51
Rise / Fall Time (Typ): 9ns, 6ns
Number of Channels: 1
Voltage - Output Supply: 13V ~ 18V
auf Bestellung 5068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
373+1.33 EUR
Mindestbestellmenge: 373
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2SC0435T2F117HPSA1
Hersteller: Infineon Technologies
Description: MODULE GATE DRIVER
Packaging: Tray
Produkt ist nicht verfügbar
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FP25R12W2T4BOMA1 Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c
Hersteller: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+83.17 EUR
Mindestbestellmenge: 7
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FS300R17OE4B61BPSA1
Hersteller: Infineon Technologies
Description: FS300R17OE4 - IGBT Module
Packaging: Bulk
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1087.75 EUR
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IQD005N04NM6CGSCATMA1 Infineon-IQD005N04NM6CGSC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169e6d0105447
IQD005N04NM6CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQD005N04NM6CGSCATMA1 Infineon-IQD005N04NM6CGSC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169e6d0105447
IQD005N04NM6CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQD005N04NM6SCATMA1 Infineon-IQD005N04NM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169effe56544b
IQD005N04NM6SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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IQD005N04NM6SCATMA1 Infineon-IQD005N04NM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c914a3ac8019169effe56544b
IQD005N04NM6SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 597A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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FS25R12W1T4BOMA1 Infineon-FS25R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4c47b490549
FS25R12W1T4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 45A 205W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+53.45 EUR
Mindestbestellmenge: 10
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FF1800R17IP5BPSA1 Infineon-FF1800R17IP5-DS-v03_02-EN.pdf?fileId=5546d46254e133b4015524ccc42d021b
FF1800R17IP5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 105 nF @ 25 V
Produkt ist nicht verfügbar
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6EDL04N03PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N03PRXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N03PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.3 EUR
Mindestbestellmenge: 3000
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6EDL04N03PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N03PRXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N03PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 280 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.7 EUR
6+3.29 EUR
10+3.14 EUR
25+2.96 EUR
50+2.84 EUR
100+2.73 EUR
500+2.5 EUR
1000+2.42 EUR
Mindestbestellmenge: 5
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S25FS064SDSBHM020 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412
S25FS064SDSBHM020
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS064SDSBHM023 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412
S25FS064SDSBHM023
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2309ZXI-1HT Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309ZXI-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2292FXIT Infineon-CY2292_Three_PLL_General_Purpose_EPROM_Programmable_Clock_Generator-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcdc6c2eac&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CY2292FXIT
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 60MHz, 80MHz
Type: Clock Generator, Fanout Distribution
Input: Clock, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V, 5V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
CY62147EV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
CY62147EV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1634 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.38 EUR
10+8.32 EUR
25+7.94 EUR
50+7.66 EUR
100+7.39 EUR
250+7.05 EUR
500+6.8 EUR
1000+6.56 EUR
Mindestbestellmenge: 2
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CY62157EV30LL-45ZXIT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+15.8 EUR
Mindestbestellmenge: 1000
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CY62157EV30LL-45ZXIT Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.52 EUR
10+18.1 EUR
25+17.54 EUR
50+17.12 EUR
100+16.7 EUR
250+16.37 EUR
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CY7C1021CV33-10ZSXA Infineon-CY7C1021CV33_Automotive_1-Mbit_(64_K_16)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd0e5e2f13&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1021CV33-10ZSXA
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1019D-10ZSXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
150+6.76 EUR
Mindestbestellmenge: 150
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CY7C1019D-10ZSXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP II
Packaging: Bulk
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
71+6.92 EUR
Mindestbestellmenge: 71
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CY7C1019D-10VXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tape & Reel (TR)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+6.71 EUR
1500+6.47 EUR
Mindestbestellmenge: 750
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CY7C1019D-10VXIT Infineon-CY7C1019D_1-Mbit_(128_K_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf2577333a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1019D-10VXIT
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Cut Tape (CT)
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.45 EUR
10+8.39 EUR
25+8 EUR
50+7.72 EUR
100+7.45 EUR
250+7.1 EUR
Mindestbestellmenge: 2
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IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C29466-24SXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29466-24SXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 28-SOIC
Number of I/O: 24
DigiKey Programmable: Verified
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.06 EUR
10+19.07 EUR
25+17.82 EUR
100+16.44 EUR
250+15.79 EUR
500+15.39 EUR
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DEMOBOARDTLD1125ELTOBO1
DEMOBOARDTLD1125ELTOBO1
Hersteller: Infineon Technologies
Description: DEMOBOARD TLD1125EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 180mA
Utilized IC / Part: TLD1125EL
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+221.23 EUR
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CY8CTMA1036AA-13T
CY8CTMA1036AA-13T
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
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CY8CTMA1036AA-13
CY8CTMA1036AA-13
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V, 2.6V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
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CY3290-TMA1036A
Hersteller: Infineon Technologies
Description: DEVELOPMENT KIT
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Utilized IC / Part: TMA1036A
Produkt ist nicht verfügbar
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CY8CTMA1036AA-33
Hersteller: Infineon Technologies
Description: IC SCREEN CTRLR TRUETOUCH 100QFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFV013 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFV013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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DEMOBOARDTLD1313ELTOBO1
Hersteller: Infineon Technologies
Description: DEMOBOARD TLD1313EL
Packaging: Bulk
Voltage - Output: 40V
Voltage - Input: 5.5V ~ 40V
Current - Output / Channel: 120mA
Utilized IC / Part: TLD1313EL
Supplied Contents: Board(s)
Outputs and Type: 3 Non-Isolated Outputs
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+221.23 EUR
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D1821SH45TPRXPSA1 D1821SH.pdf
D1821SH45TPRXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 4500V 2210A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2210A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 2500 A
Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
Produkt ist nicht verfügbar
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LWLR10LR87L3000HPSA1 Infineon-LIGHT%20FIBER%20LWL%20R10-LR87-DS-v02_01-EN.pdf?fileId=5546d462525dbac401532cafdddc74d1
LWLR10LR87L3000HPSA1
Hersteller: Infineon Technologies
Description: FIBER OPTIC CBL 3M
Packaging: Tray
Cable Diameter: 0.11" (2.8mm), 0.12" (3.0mm)
Length - Overall: 9.8' (3.0m)
Produkt ist nicht verfügbar
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IFS100V12PT4BOSA1 IFS100V12PT4.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 65°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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CYW15G0403DXB-BGI
CYW15G0403DXB-BGI
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 256BGA
Packaging: Tray
Package / Case: 256-BGA Exposed Pad
Mounting Type: Surface Mount
Voltage - Supply: 3.135V ~ 3.465V
Supplier Device Package: 256-L2BGA (27x27)
Number of Circuits: 4
auf Bestellung 1210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+139.05 EUR
Mindestbestellmenge: 4
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EVALBGA123N6TOBO1 Infineon-BGA123N6-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c7f2a768a017f975b343074f4
EVALBGA123N6TOBO1
Hersteller: Infineon Technologies
Description: EVAL BGA123N6
Packaging: Bulk
For Use With/Related Products: BGA123N6
Frequency: 1.55GHz ~ 1.615GHz
Type: Amplifier
Supplied Contents: Board(s)
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+246.36 EUR
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EVALBGA125N6TOBO1 Infineon-BGA125N6-DataSheet-v02_05-EN.pdf?fileId=8ac78c8c7f2a768a017f975b483c74f7
EVALBGA125N6TOBO1
Hersteller: Infineon Technologies
Description: EVAL BGA125N6
Packaging: Bulk
For Use With/Related Products: BGA125N6
Frequency: 1.164GHz ~ 1.3GHz
Type: Amplifier
Supplied Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+246.36 EUR
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IR3622MTRPBF IR3622MPbF.pdf
IR3622MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
Produkt ist nicht verfügbar
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IR3622MTRPBF IR3622MPbF.pdf
IR3622MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
Produkt ist nicht verfügbar
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IR3622MTRPBF IR3622MPbF.pdf
IR3622MTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 32MLPQ
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 600kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 7.5V ~ 14.5V
Supplier Device Package: 32-MLPQ (5x5)
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control, Power Good, Sequencing, Soft Start, Tracking
Output Phases: 2
Duty Cycle (Max): 84%
Clock Sync: Yes
Number of Outputs: 2
auf Bestellung 3457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+3.3 EUR
Mindestbestellmenge: 154
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CY2DL814ZXI cy2dl814_8.pdf
CY2DL814ZXI
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:4 400MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 400 MHz
Produkt ist nicht verfügbar
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BC857SH6827XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
BC857SH6827XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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BC857SH6827XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
BC857SH6827XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5887+0.084 EUR
Mindestbestellmenge: 5887
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SPOC2DBBTS712204ESATOBO1
SPOC2DBBTS712204ESATOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71220-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESA
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.11 EUR
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BTS71202EPADAUGHBRDTOBO1 Infineon-BTS7120-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d462636cc8fb016421dc08d31138
BTS71202EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTS7120-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7120-2EPA
Produkt ist nicht verfügbar
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T880N16TOFXPSA1 Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8
T880N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1750A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 880 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1750 A
Voltage - Off State: 1.8 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+266.6 EUR
Mindestbestellmenge: 2
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FS225R12OE4BOSA1 Infineon-FS225R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff90136ab5334d94ca0
FS225R12OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 350A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+386.57 EUR
Mindestbestellmenge: 2
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XMC7100-E272K4160AA Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415
XMC7100-E272K4160AA
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4.06MB 272LFBGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 207
Produkt ist nicht verfügbar
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 1971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
18+1 EUR
100+0.75 EUR
500+0.67 EUR
1000+0.63 EUR
Mindestbestellmenge: 11
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CY7C65620-56LFXCT download
CY7C65620-56LFXCT
Hersteller: Infineon Technologies
Description: IC USB HUB CTRLR 2PORT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS11FHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11FHB020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BB644E7904HTSA1 bb644_bb664series.pdf
BB644E7904HTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
Produkt ist nicht verfügbar
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IRS21531DPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
auf Bestellung 6044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.17 EUR
Mindestbestellmenge: 143
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DF23MR12W1M1PB11BPSA1 Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5
DF23MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+133.5 EUR
Mindestbestellmenge: 4
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FP15R12W1T7B3BOMA1 Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da
FP15R12W1T7B3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+54.47 EUR
Mindestbestellmenge: 10
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