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IJW120R070T1FKSA1 IJW120R070T1FKSA1 Infineon Technologies INFNS28721-1.pdf?t.download=true&u=5oefqw Description: JFET PWR FIELD EFFECT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 35 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 238 W
Resistance - RDS(On): 70 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V
auf Bestellung 330 Stücke:
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10+53.51 EUR
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IRG7PH35UD1MPBF IRG7PH35UD1MPBF Infineon Technologies IRG7PH35UD1MPbF.pdf Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Produkt ist nicht verfügbar
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IRG7PH35UD1-EP IRG7PH35UD1-EP Infineon Technologies IRG7PH35UD1PBF%28-EP%29.pdf Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Produkt ist nicht verfügbar
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D1800N48TVFXPSA1 D1800N48TVFXPSA1 Infineon Technologies D1800N.pdf Description: DIODE STANDARD 4800V 1800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1800A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
auf Bestellung 8 Stücke:
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CY8C4024LQS-S413 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4024LQS-S413T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4025LQSS413XQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4025LQSS413TXUMA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b Description: IC MCU 32BIT 32KB FLASH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FD1200R12IE4B1S1BDMA1 Infineon Technologies Infineonc09618.pdf Description: FD1200R12IE4B1S1BD - IGBT
Packaging: Bulk
auf Bestellung 84 Stücke:
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F3L6MR20W2M1HB70BPSA1 F3L6MR20W2M1HB70BPSA1 Infineon Technologies Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
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FF6MR20W2M1HB70BPSA1 FF6MR20W2M1HB70BPSA1 Infineon Technologies Infineon-FF6MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1c23c84ee0 Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
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IM06B20AC1XKMA1 IM06B20AC1XKMA1 Infineon Technologies Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
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IM06B30AC1XKMA1 IM06B30AC1XKMA1 Infineon Technologies Description: IGBT IPM 650V 30A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
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SPOC2DBBTS710404ESATOBO1 SPOC2DBBTS710404ESATOBO1 Infineon Technologies Description: SPOC-2 DB BTS71040-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESA
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SPOC2DBBTS710404ESPTOBO1 SPOC2DBBTS710404ESPTOBO1 Infineon Technologies SPOC2DBBTS710404ESPTOBO1.pdf Description: SPOC-2 DB BTS71040-4ESP
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESP
Produkt ist nicht verfügbar
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IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278 Description: IGLT65R035D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R035D2ATMA1 IGLT65R035D2ATMA1 Infineon Technologies Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278 Description: IGLT65R035D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies IGOT65R035D2AUMA1.pdf Description: IGOT65R035D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R035D2AUMA1 IGOT65R035D2AUMA1 Infineon Technologies IGOT65R035D2AUMA1.pdf Description: IGOT65R035D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG120R040M2HXTMA1 IMBG120R040M2HXTMA1 Infineon Technologies Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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IMBG120R040M2HXTMA1 IMBG120R040M2HXTMA1 Infineon Technologies Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
auf Bestellung 561 Stücke:
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2+17.49 EUR
10+12.07 EUR
100+9 EUR
500+8.16 EUR
Mindestbestellmenge: 2
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IMLT65R015M2HXTMA1 IMLT65R015M2HXTMA1 Infineon Technologies infineon-imlt65r015m2h-datasheet-en.pdf Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Produkt ist nicht verfügbar
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IMLT65R015M2HXTMA1 IMLT65R015M2HXTMA1 Infineon Technologies infineon-imlt65r015m2h-datasheet-en.pdf Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 1046 Stücke:
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1+22.76 EUR
10+18.64 EUR
100+17.27 EUR
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AIMBG75R016M1HXTMA1 AIMBG75R016M1HXTMA1 Infineon Technologies Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0 Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMBG75R016M1HXTMA1 AIMBG75R016M1HXTMA1 Infineon Technologies Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0 Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 725 Stücke:
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1+38.07 EUR
10+27.47 EUR
100+22.28 EUR
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KITA2GTC3975VTRBTOBO1 KITA2GTC3975VTRBTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC397 5V TRB FIXED BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Fixed
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KITA2GTC3645VTRBSTOBO1 KITA2GTC3645VTRBSTOBO1 Infineon Technologies Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba Description: AURIX TC364 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC364
Platform: AURIX TC364 5V TRB Socket
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1+2100.67 EUR
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KITA2GTC3775VTRBSTOBO1 KITA2GTC3775VTRBSTOBO1 Infineon Technologies Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be Description: AURIX TC377 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TRB Socket
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APPKITA2GSAFETYTOBO1 APPKITA2GSAFETYTOBO1 Infineon Technologies Infineon-APPKIT_A2G_SAFETY_Overview-Presentations-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ea4397e4d1130 Description: APPKITA2GSAFETYTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX
auf Bestellung 5 Stücke:
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1+959.06 EUR
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KITA2GTC3895VTRBTOBO1 KITA2GTC3895VTRBTOBO1 Infineon Technologies Description: KIT_A2G_TC389_5V_TRB
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC389
Platform: AURIX
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1+1494.89 EUR
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FS100R12KT4GBOSA1 FS100R12KT4GBOSA1 Infineon Technologies Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81 Description: IGBT MOD 1200V 100A 515W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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IPD50N03S207ATMA1 IPD50N03S207ATMA1 Infineon Technologies IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72 Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17163 Stücke:
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IPI70N04S406AKSA1 IPI70N04S406AKSA1 Infineon Technologies Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
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TLT9252VLCXUMA1 TLT9252VLCXUMA1 Infineon Technologies Infineon-TLT9252VLC-DataSheet-v01_00-EN.pdf?fileId=5546d4626e8d4b8f016ea702da5208eb Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
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10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+1.99 EUR
2500+1.93 EUR
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CY8C20246A-24LKXIT CY8C20246A-24LKXIT Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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T1190N16TOFVTXPSA1 T1190N16TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
auf Bestellung 1 Stücke:
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T1500N16TOFVTXPSA1 T1500N16TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
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T1500N18TOFVTXPSA1 T1500N18TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
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T2600N16TOFVTXPSA1 T2600N16TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T2600N18TOFVTXPSA1 T2600N18TOFVTXPSA1 Infineon Technologies Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T3800N18TOFVTXPSA1 T3800N18TOFVTXPSA1 Infineon Technologies Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7 Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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IGD08N120S7ATMA1 IGD08N120S7ATMA1 Infineon Technologies Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270 Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
auf Bestellung 2500 Stücke:
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2500+1.1 EUR
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IGD08N120S7ATMA1 IGD08N120S7ATMA1 Infineon Technologies Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270 Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
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5+3.73 EUR
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100+1.64 EUR
500+1.32 EUR
1000+1.3 EUR
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ISC0605NLSATMA1 Infineon Technologies Infineon-ISC0605NLS-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185de0f390f6a9c Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
Produkt ist nicht verfügbar
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IPB160N04S203ATMA4 IPB160N04S203ATMA4 Infineon Technologies Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207282 Stücke:
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IRG4IBC20WPBF IRG4IBC20WPBF Infineon Technologies irg4ibc20wpbf.pdf?fileId=5546d462533600a401535643887122b2 Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
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267+1.69 EUR
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1EDF5673KXUMA1 1EDF5673KXUMA1 Infineon Technologies Infineon-1EDF5673K-DS-v02_00-EN.pdf?fileId=5546d46266a498f50166c9b5b486226a Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
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189+2.67 EUR
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CY7C1380KV33-250AXC CY7C1380KV33-250AXC Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD104N08KAHPSA1 DD104N08KAHPSA1 Infineon Technologies DD104N.pdf Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Produkt ist nicht verfügbar
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IRFS4410TRLPBF IRFS4410TRLPBF Infineon Technologies irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0 Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
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IRFH4210DTRPBF IRFH4210DTRPBF Infineon Technologies irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80 Description: MOSFET N-CH 25V 44A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Produkt ist nicht verfügbar
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IRFH4210DTRPBF IRFH4210DTRPBF Infineon Technologies irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80 Description: MOSFET N-CH 25V 44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
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S29GL512T12DHN013 S29GL512T12DHN013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S29GL01GT12DHN013 S29GL01GT12DHN013 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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64-2143PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 BTH500301LUAAUMA1 Infineon Technologies Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324 Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+4.56 EUR
Mindestbestellmenge: 2000
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BTH500301LUAAUMA1 BTH500301LUAAUMA1 Infineon Technologies Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324 Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2002 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.86 EUR
10+7.73 EUR
100+5.65 EUR
500+5.51 EUR
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REF60100EDPSTOBO1 REF60100EDPSTOBO1 Infineon Technologies UM103815_eDisconnect%20Power%20Switch%20for%20battery-powered%20applications.pdf Description: REF60100EDPSTOBO1
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
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IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Infineon Technologies Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.13 EUR
10+6.97 EUR
25+6.43 EUR
100+5.84 EUR
250+5.56 EUR
500+5.39 EUR
1000+5.25 EUR
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IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Infineon Technologies Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IJW120R070T1FKSA1 INFNS28721-1.pdf?t.download=true&u=5oefqw
IJW120R070T1FKSA1
Hersteller: Infineon Technologies
Description: JFET PWR FIELD EFFECT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 35 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 238 W
Resistance - RDS(On): 70 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 3.3 µA @ 1200 V
auf Bestellung 330 Stücke:
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Anzahl Preis
10+53.51 EUR
Mindestbestellmenge: 10
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IRG7PH35UD1MPBF IRG7PH35UD1MPbF.pdf
IRG7PH35UD1MPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Produkt ist nicht verfügbar
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IRG7PH35UD1-EP IRG7PH35UD1PBF%28-EP%29.pdf
IRG7PH35UD1-EP
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: -/160ns
Switching Energy: 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 179 W
Produkt ist nicht verfügbar
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D1800N48TVFXPSA1 D1800N.pdf
D1800N48TVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 4800V 1800A
Packaging: Tray
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1800A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+737.11 EUR
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CY8C4024LQS-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4024LQS-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4025LQSS413XQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4025LQSS413TXUMA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_PSoC-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FD1200R12IE4B1S1BDMA1 Infineonc09618.pdf
Hersteller: Infineon Technologies
Description: FD1200R12IE4B1S1BD - IGBT
Packaging: Bulk
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1887.51 EUR
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F3L6MR20W2M1HB70BPSA1 Infineon-FF3MR20KM1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a8bcde381a
F3L6MR20W2M1HB70BPSA1
Hersteller: Infineon Technologies
Description: F3L6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 155A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 297nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
auf Bestellung 15 Stücke:
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Anzahl Preis
1+459.29 EUR
15+451.35 EUR
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FF6MR20W2M1HB70BPSA1 Infineon-FF6MR12W2M1H_B70-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018bed1c23c84ee0
FF6MR20W2M1HB70BPSA1
Hersteller: Infineon Technologies
Description: FF6MR20W2M1HB70BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 160A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 24100pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 160A, 18V
Gate Charge (Qg) (Max) @ Vgs: 780nC @ 3V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.15V @ 112mA
auf Bestellung 15 Stücke:
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Anzahl Preis
1+456.12 EUR
15+447.78 EUR
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IM06B20AC1XKMA1
IM06B20AC1XKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 650V 20A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 20 A
Voltage: 650 V
auf Bestellung 110 Stücke:
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Anzahl Preis
2+12.13 EUR
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IM06B30AC1XKMA1
IM06B30AC1XKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 650V 30A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 30 A
Voltage: 650 V
auf Bestellung 152 Stücke:
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Anzahl Preis
2+14.27 EUR
Mindestbestellmenge: 2
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SPOC2DBBTS710404ESATOBO1
SPOC2DBBTS710404ESATOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESA
auf Bestellung 2 Stücke:
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Anzahl Preis
1+117.11 EUR
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SPOC2DBBTS710404ESPTOBO1 SPOC2DBBTS710404ESPTOBO1.pdf
SPOC2DBBTS710404ESPTOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71040-4ESP
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71040-4ESP
Produkt ist nicht verfügbar
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IGLT65R035D2ATMA1 Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278
IGLT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: IGLT65R035D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R035D2ATMA1 Infineon-IGLT65R035D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bde287278
IGLT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: IGLT65R035D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R035D2AUMA1 IGOT65R035D2AUMA1.pdf
IGOT65R035D2AUMA1
Hersteller: Infineon Technologies
Description: IGOT65R035D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R035D2AUMA1 IGOT65R035D2AUMA1.pdf
IGOT65R035D2AUMA1
Hersteller: Infineon Technologies
Description: IGOT65R035D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG120R040M2HXTMA1 Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0
IMBG120R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R040M2HXTMA1 Infineon-IMBG120R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d2200102020d0
IMBG120R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
auf Bestellung 561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.49 EUR
10+12.07 EUR
100+9 EUR
500+8.16 EUR
Mindestbestellmenge: 2
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IMLT65R015M2HXTMA1 infineon-imlt65r015m2h-datasheet-en.pdf
IMLT65R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Produkt ist nicht verfügbar
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IMLT65R015M2HXTMA1 infineon-imlt65r015m2h-datasheet-en.pdf
IMLT65R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 142A HDSOP-16
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 1046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.76 EUR
10+18.64 EUR
100+17.27 EUR
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AIMBG75R016M1HXTMA1 Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0
AIMBG75R016M1HXTMA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMBG75R016M1HXTMA1 Infineon-AIMBG75R016M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018bae2dfed87ec0
AIMBG75R016M1HXTMA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
auf Bestellung 725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.07 EUR
10+27.47 EUR
100+22.28 EUR
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KITA2GTC3975VTRBTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3975VTRBTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC397 5V TRB FIXED BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX TC397 5V TRB Fixed
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1435.09 EUR
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KITA2GTC3645VTRBSTOBO1 Infineon-AURIX_TC36x_Addendum-DataSheet-v01_05-EN.pdf?fileId=5546d4627506bb32017546b43c8329ba
KITA2GTC3645VTRBSTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC364 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC364
Platform: AURIX TC364 5V TRB Socket
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2100.67 EUR
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KITA2GTC3775VTRBSTOBO1 Infineon-TriBoardManual_TC3X71-UserManual-v02_01-EN.pdf?fileId=5546d462696dbf1201697775dd0b58be
KITA2GTC3775VTRBSTOBO1
Hersteller: Infineon Technologies
Description: AURIX TC377 5V TRB SOCKET BRD
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC377
Platform: AURIX TC377 5V TRB Socket
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2764.03 EUR
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APPKITA2GSAFETYTOBO1 Infineon-APPKIT_A2G_SAFETY_Overview-Presentations-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ea4397e4d1130
APPKITA2GSAFETYTOBO1
Hersteller: Infineon Technologies
Description: APPKITA2GSAFETYTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC397
Platform: AURIX
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+959.06 EUR
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KITA2GTC3895VTRBTOBO1
KITA2GTC3895VTRBTOBO1
Hersteller: Infineon Technologies
Description: KIT_A2G_TC389_5V_TRB
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC389
Platform: AURIX
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1494.89 EUR
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FS100R12KT4GBOSA1 Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81
FS100R12KT4GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 100A 515W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+157.01 EUR
Mindestbestellmenge: 3
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IPD50N03S207ATMA1 IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72
IPD50N03S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17163 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
260+1.74 EUR
Mindestbestellmenge: 260
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IPI70N04S406AKSA1 Infineon-IPP_B_I70N04S4_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c501db65d98&ack=t
IPI70N04S406AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 26µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 25 V
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
414+1.21 EUR
Mindestbestellmenge: 414
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TLT9252VLCXUMA1 Infineon-TLT9252VLC-DataSheet-v01_00-EN.pdf?fileId=5546d4626e8d4b8f016ea702da5208eb
TLT9252VLCXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-14
Packaging: Cut Tape (CT)
Package / Case: 14-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-14-3
Receiver Hysteresis: 30 mV
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+1.99 EUR
2500+1.93 EUR
Mindestbestellmenge: 5
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CY8C20246A-24LKXIT Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20246A-24LKXIT
Hersteller: Infineon Technologies
Description: IC MCU PSOC 16K FLASH 2K 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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T1190N16TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Bulk
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+426.5 EUR
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T1500N16TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+490.42 EUR
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T1500N18TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+511.19 EUR
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T2600N16TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T2600N18TOFVTXPSA1 Infineon-T2600N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6f5ff7deb
T2600N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Packaging: Tray
Package / Case: TO-200AD
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2610 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T3800N18TOFVTXPSA1 Infineon-T3800N-DataSheet-v03_01-EN.pdf?fileId=5546d46277fc7439017836a6e7bc7de7
T3800N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Packaging: Tray
Package / Case: TO-200AE
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 3800 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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IGD08N120S7ATMA1 Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270
IGD08N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.1 EUR
Mindestbestellmenge: 2500
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IGD08N120S7ATMA1 Infineon-IGD08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb76e273270
IGD08N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
auf Bestellung 2663 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.73 EUR
10+2.4 EUR
100+1.64 EUR
500+1.32 EUR
1000+1.3 EUR
Mindestbestellmenge: 5
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ISC0605NLSATMA1 Infineon-ISC0605NLS-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85c5e5aa0185de0f390f6a9c
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
Produkt ist nicht verfügbar
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IPB160N04S203ATMA4 Infineon-IPB160N04S2_03-DS-v01_00-en.pdf?fileId=db3a304412b407950112b42b97434564&ack=t
IPB160N04S203ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 207282 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
114+3.97 EUR
Mindestbestellmenge: 114
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IRG4IBC20WPBF irg4ibc20wpbf.pdf?fileId=5546d462533600a401535643887122b2
IRG4IBC20WPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
267+1.69 EUR
Mindestbestellmenge: 267
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1EDF5673KXUMA1 Infineon-1EDF5673K-DS-v02_00-EN.pdf?fileId=5546d46266a498f50166c9b5b486226a
1EDF5673KXUMA1
Hersteller: Infineon Technologies
Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
auf Bestellung 26086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.67 EUR
Mindestbestellmenge: 189
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CY7C1380KV33-250AXC download
CY7C1380KV33-250AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 2.6 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD104N08KAHPSA1 DD104N.pdf
DD104N08KAHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Produkt ist nicht verfügbar
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IRFS4410TRLPBF irfs4410pbf.pdf?fileId=5546d462533600a40153563a29f521b0
IRFS4410TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 88A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
auf Bestellung 842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
146+3.45 EUR
Mindestbestellmenge: 146
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IRFH4210DTRPBF irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80
IRFH4210DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 44A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Produkt ist nicht verfügbar
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IRFH4210DTRPBF irfh4210dpbf.pdf?fileId=5546d462533600a40153561a4e871e80
IRFH4210DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 44A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 100µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4812 pF @ 13 V
Produkt ist nicht verfügbar
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S29GL512T12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12DHN013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GT12DHN013 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT12DHN013
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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64-2143PBF fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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BTH500301LUAAUMA1 Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324
BTH500301LUAAUMA1
Hersteller: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.56 EUR
Mindestbestellmenge: 2000
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BTH500301LUAAUMA1 Infineon-Infineon-BTH50030-1LUA_Data_Sheet-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ec6a9ebae4324
BTH500301LUAAUMA1
Hersteller: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3Ohm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.86 EUR
10+7.73 EUR
100+5.65 EUR
500+5.51 EUR
Mindestbestellmenge: 2
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REF60100EDPSTOBO1 UM103815_eDisconnect%20Power%20Switch%20for%20battery-powered%20applications.pdf
REF60100EDPSTOBO1
Hersteller: Infineon Technologies
Description: REF60100EDPSTOBO1
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
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IAUTN08S5N012LATMA1 Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf
IAUTN08S5N012LATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.13 EUR
10+6.97 EUR
25+6.43 EUR
100+5.84 EUR
250+5.56 EUR
500+5.39 EUR
1000+5.25 EUR
Mindestbestellmenge: 2
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IAUTN08S5N012LATMA1 Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf
IAUTN08S5N012LATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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