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SPS02N60C3 SPS02N60C3 Infineon Technologies SPS02N60C3.pdf Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
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CG7822AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CG9080AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG8466AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG7818AA Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG7818AAT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CG7822AA Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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CY62187EV30LL-55BAXIT CY62187EV30LL-55BAXIT Infineon Technologies Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
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SPD30N08S2-22 SPD30N08S2-22 Infineon Technologies SPD30N08S2-22.pdf Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
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IMT65R022M1HXUMA1 IMT65R022M1HXUMA1 Infineon Technologies Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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IMT65R022M1HXUMA1 IMT65R022M1HXUMA1 Infineon Technologies Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 600 Stücke:
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10+16.37 EUR
100+12.48 EUR
500+12.42 EUR
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CY8C4127AZE-S445T CY8C4127AZE-S445T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STRVS280X02F Infineon Technologies STRVS280X02F.pdf?t.download=true&u=axiww2 Description: SPD
Packaging: Bulk
auf Bestellung 3000 Stücke:
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IQD063N15NM5CGSCATMA1 IQD063N15NM5CGSCATMA1 Infineon Technologies Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5CGSCATMA1 IQD063N15NM5CGSCATMA1 Infineon Technologies Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5SCATMA1 IQD063N15NM5SCATMA1 Infineon Technologies Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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IQD063N15NM5SCATMA1 IQD063N15NM5SCATMA1 Infineon Technologies Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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IFF600B12ME4B11BOSA1 IFF600B12ME4B11BOSA1 Infineon Technologies Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
auf Bestellung 2313 Stücke:
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IPD030N03LF2SATMA1 IPD030N03LF2SATMA1 Infineon Technologies datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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2000+0.70 EUR
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IPD030N03LF2SATMA1 IPD030N03LF2SATMA1 Infineon Technologies datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
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7+2.52 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
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FZ1600R17KF6CB2NOSA1 Infineon Technologies INFNS28627-1.pdf?t.download=true&u=5oefqw Description: FZ1600R17KF6C_B2 - 1700V IGBT MO
Packaging: Bulk
auf Bestellung 42 Stücke:
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1+2339.55 EUR
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BAS70B5003 BAS70B5003 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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10377+0.05 EUR
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DEMOBOARDITS4075QTOBO1 DEMOBOARDITS4075QTOBO1 Infineon Technologies Infineon-ITS4xxxQ_Demo_Board_User_Guide-UM-v01_00-EN.pdf?fileId=5546d46264a8de7e0164cc970bd837f8 Description: EVAL BOARD FOR ITS4075Q
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ITS4075Q
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1+117.78 EUR
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IRAMS06UP60A-2 Infineon Technologies IRSDS06928-1.pdf?t.download=true&u=5oefqw Description: IRAMS06 - INTELLIGENT POWER MODU
Packaging: Bulk
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
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DF1000R17IE4DB2BOSA1 Infineon Technologies INFNS28237-1.pdf?t.download=true&u=5oefqw Description: DF1000R17IE4D_B2 - 1700 V, 1000
Packaging: Bulk
auf Bestellung 360 Stücke:
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1+815.55 EUR
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S99WS128P0010 Infineon Technologies Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
DigiKey Programmable: Not Verified
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AIMCQ120R020M1TXTMA1 AIMCQ120R020M1TXTMA1 Infineon Technologies Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R020M1TXTMA1 AIMCQ120R020M1TXTMA1 Infineon Technologies Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
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CY2544QC013T CY2544QC013T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC014T CY2544QC014T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2545QC010T CY2545QC010T Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC011T CY2544QC011T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC016T CY2544QC016T Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC013 CY2544QC013 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC014 CY2544QC014 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2545QC010 CY2545QC010 Infineon Technologies Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
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CY2544QC016 CY2544QC016 Infineon Technologies download Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT3DLBBEBQ1BZSGS CYT3DLBBEBQ1BZSGS Infineon Technologies Description: IC MCU 32BIT 4.063MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
DigiKey Programmable: Not Verified
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CYT3DLABGBQ1AESGS CYT3DLABGBQ1AESGS Infineon Technologies Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
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CYT3DLABABQ1AESGST CYT3DLABABQ1AESGST Infineon Technologies Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
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CYT3DLABGBQ1AESGST CYT3DLABGBQ1AESGST Infineon Technologies Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
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CY8C27243-24SXI CY8C27243-24SXI Infineon Technologies download description Description: IC MCU 8BIT 16KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1 Infineon Technologies IPD040N03LF2SATMA1.pdf Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1 Infineon Technologies IPD040N03LF2SATMA1.pdf Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
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S25FL128LAGNFI013 S25FL128LAGNFI013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FL128LAGNFI013 S25FL128LAGNFI013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IMZA65R040M2HXKSA1 IMZA65R040M2HXKSA1 Infineon Technologies Infineon-IMZA65R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b64ee52dc Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
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FF2600UXTR33T2M1BPSA1 FF2600UXTR33T2M1BPSA1 Infineon Technologies Infineon-FF2600UXTR33T2M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe3442aa75dc7 Description: MOSFET 2N-CH 3300V AG-XHP2K33
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Supplier Device Package: AG-XHP2K33
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F3L200R07W2S5PB95BPSA1 F3L200R07W2S5PB95BPSA1 Infineon Technologies Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113 Description: F3L200R07W2S5PB95BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
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FF4000UXTR33T2M1BPSA1 FF4000UXTR33T2M1BPSA1 Infineon Technologies DS_FF4000UXTR33T2M1_v1.00_en.pdf Description: MOSFET 2 N-CH 3300V XHP2K17
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Supplier Device Package: AG-XHP2K17
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IRF1407PBF IRF1407PBF Infineon Technologies irf1407pbf.pdf?fileId=5546d462533600a4015355db28c218c8 description Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
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TLE98442QXXUMA2 Infineon Technologies Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509 Description: EMBEDDED_POWER
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
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IRG4BC30FD1PBF IRG4BC30FD1PBF Infineon Technologies irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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IRG4BC30FD1PBF IRG4BC30FD1PBF Infineon Technologies irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
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CYW43022CUBT CYW43022CUBT Infineon Technologies Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186 Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
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CYW43022CUBT CYW43022CUBT Infineon Technologies Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186 Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
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ICE5QR1070AZXKLA1 ICE5QR1070AZXKLA1 Infineon Technologies Infineon-ICE5QRxxxxAx-DS-v02_10-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c Description: AC-DC INTEGRATED POWER STAGE - C
Packaging: Bulk
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
273+1.80 EUR
Mindestbestellmenge: 273
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CY90911ASPMC-GS-106E1 CY90911ASPMC-GS-106E1 Infineon Technologies download Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1 Infineon Technologies IGLT65R110D2ATMA1.pdf Description: IGLT65R110D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1 Infineon Technologies IGLT65R110D2ATMA1.pdf Description: IGLT65R110D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Produkt ist nicht verfügbar
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SPS02N60C3 SPS02N60C3.pdf
SPS02N60C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 975 Stücke:
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Anzahl Preis
693+0.72 EUR
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CG7822AAT
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CG9080AAT
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CG8466AAT
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CG7818AA
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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CG7818AAT
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CG7822AA
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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CY62187EV30LL-55BAXIT Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62187EV30LL-55BAXIT
Hersteller: Infineon Technologies
Description: IC SRAM 64MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.7V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (8x9.5)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPD30N08S2-22 SPD30N08S2-22.pdf
SPD30N08S2-22
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
auf Bestellung 1134 Stücke:
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Anzahl Preis
547+0.89 EUR
Mindestbestellmenge: 547
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IMT65R022M1HXUMA1 Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb
IMT65R022M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar
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IMT65R022M1HXUMA1 Infineon-IMT65R022M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f4b265b71bb
IMT65R022M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.27 EUR
10+16.37 EUR
100+12.48 EUR
500+12.42 EUR
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CY8C4127AZE-S445T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4127AZE-S445T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STRVS280X02F STRVS280X02F.pdf?t.download=true&u=axiww2
Hersteller: Infineon Technologies
Description: SPD
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1667+0.29 EUR
Mindestbestellmenge: 1667
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IQD063N15NM5CGSCATMA1 Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e
IQD063N15NM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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IQD063N15NM5CGSCATMA1 Infineon-IQD063N15NM5CGSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b78020eb6b3e
IQD063N15NM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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IQD063N15NM5SCATMA1 Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a
IQD063N15NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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IQD063N15NM5SCATMA1 Infineon-IQD063N15NM5SC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b7814b9a6c5a
IQD063N15NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Produkt ist nicht verfügbar
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IFF600B12ME4B11BOSA1 Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e
IFF600B12ME4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
auf Bestellung 2313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+342.07 EUR
Mindestbestellmenge: 2
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IPD030N03LF2SATMA1 datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
IPD030N03LF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 2000 Stücke:
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Anzahl Preis
2000+0.70 EUR
Mindestbestellmenge: 2000
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IPD030N03LF2SATMA1 datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
IPD030N03LF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
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FZ1600R17KF6CB2NOSA1 INFNS28627-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FZ1600R17KF6C_B2 - 1700V IGBT MO
Packaging: Bulk
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2339.55 EUR
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BAS70B5003 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70B5003
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 26925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10377+0.05 EUR
Mindestbestellmenge: 10377
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DEMOBOARDITS4075QTOBO1 Infineon-ITS4xxxQ_Demo_Board_User_Guide-UM-v01_00-EN.pdf?fileId=5546d46264a8de7e0164cc970bd837f8
DEMOBOARDITS4075QTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ITS4075Q
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ITS4075Q
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.78 EUR
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IRAMS06UP60A-2 IRSDS06928-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IRAMS06 - INTELLIGENT POWER MODU
Packaging: Bulk
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
auf Bestellung 1668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+24.77 EUR
Mindestbestellmenge: 20
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DF1000R17IE4DB2BOSA1 INFNS28237-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DF1000R17IE4D_B2 - 1700 V, 1000
Packaging: Bulk
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+815.55 EUR
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S99WS128P0010
Hersteller: Infineon Technologies
Description: IC FLASH
Packaging: Tray
Technology: FLASH - NOR
Memory Format: FLASH
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMCQ120R020M1TXTMA1
AIMCQ120R020M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMCQ120R020M1TXTMA1
AIMCQ120R020M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY2544QC013T download
CY2544QC013T
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC014T download
CY2544QC014T
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2545QC010T Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2545QC010T
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC011T download
CY2544QC011T
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC016T download
CY2544QC016T
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC013 download
CY2544QC013
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC014 download
CY2544QC014
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2545QC010 Infineon-CY2545_CY2547_Quad_PLL_Programmable_Spread_Spectrum_Clock_Generator_with_Serial_I2C_Interface-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec61b3f3c3b&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY2545QC010
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 2:8
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2544QC016 download
CY2544QC016
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT3DLBBEBQ1BZSGS
CYT3DLBBEBQ1BZSGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4.063MB FLSH 272BGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
DigiKey Programmable: Not Verified
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.44 EUR
10+48.32 EUR
25+45.55 EUR
96+42.58 EUR
288+40.86 EUR
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CYT3DLABGBQ1AESGS
CYT3DLABGBQ1AESGS
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.05 EUR
10+48.00 EUR
40+44.08 EUR
80+42.62 EUR
240+40.82 EUR
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CYT3DLABABQ1AESGST
CYT3DLABABQ1AESGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT3DLABGBQ1AESGST
CYT3DLABGBQ1AESGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C27243-24SXI description download
CY8C27243-24SXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
IPD040N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.56 EUR
Mindestbestellmenge: 2000
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IPD040N03LF2SATMA1 IPD040N03LF2SATMA1.pdf
IPD040N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
15+1.20 EUR
100+0.88 EUR
500+0.71 EUR
1000+0.63 EUR
Mindestbestellmenge: 10
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S25FL128LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFI013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128LAGNFI013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFI013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.95 EUR
25+2.87 EUR
50+2.80 EUR
100+2.74 EUR
250+2.65 EUR
500+2.59 EUR
1000+2.53 EUR
Mindestbestellmenge: 6
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IMZA65R040M2HXKSA1 Infineon-IMZA65R040M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63b64ee52dc
IMZA65R040M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.10 EUR
10+12.55 EUR
30+11.51 EUR
120+10.59 EUR
Mindestbestellmenge: 2
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FF2600UXTR33T2M1BPSA1 Infineon-FF2600UXTR33T2M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe3442aa75dc7
FF2600UXTR33T2M1BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 3300V AG-XHP2K33
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Supplier Device Package: AG-XHP2K33
Produkt ist nicht verfügbar
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F3L200R07W2S5PB95BPSA1 Infineon-F3L200R07W2S5F_B11-DataSheet-v03_00-EN.pdf?fileId=5546d46272e49d2a01734dfbd7647113
F3L200R07W2S5PB95BPSA1
Hersteller: Infineon Technologies
Description: F3L200R07W2S5PB95BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 45 µA
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+177.16 EUR
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FF4000UXTR33T2M1BPSA1 DS_FF4000UXTR33T2M1_v1.00_en.pdf
FF4000UXTR33T2M1BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2 N-CH 3300V XHP2K17
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Supplier Device Package: AG-XHP2K17
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6145.62 EUR
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IRF1407PBF description irf1407pbf.pdf?fileId=5546d462533600a4015355db28c218c8
IRF1407PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 11009 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.31 EUR
50+1.97 EUR
100+1.88 EUR
500+1.66 EUR
Mindestbestellmenge: 5
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TLE98442QXXUMA2 Infineon-TLE9844-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84a1d6e97509
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Applications: Automotive
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRG4BC30FD1PBF irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f
IRG4BC30FD1PBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
185+3.08 EUR
Mindestbestellmenge: 185
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IRG4BC30FD1PBF irg4bc30fd1pbf.pdf?fileId=5546d462533600a40153563f9fa3226f
IRG4BC30FD1PBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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CYW43022CUBT Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186
CYW43022CUBT
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+7.86 EUR
Mindestbestellmenge: 5000
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CYW43022CUBT Infineon-AIROC_CYW43022_Wi-Fi_5_Bluetooth_5-ProductBrief-v06_00-EN.pdf?fileId=8ac78c8c869190210186a14ce9be3186
CYW43022CUBT
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.43 EUR
10+11.21 EUR
25+10.41 EUR
100+9.53 EUR
250+9.10 EUR
500+8.85 EUR
1000+8.64 EUR
Mindestbestellmenge: 2
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ICE5QR1070AZXKLA1 Infineon-ICE5QRxxxxAx-DS-v02_10-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c
ICE5QR1070AZXKLA1
Hersteller: Infineon Technologies
Description: AC-DC INTEGRATED POWER STAGE - C
Packaging: Bulk
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
273+1.80 EUR
Mindestbestellmenge: 273
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CY90911ASPMC-GS-106E1 download
CY90911ASPMC-GS-106E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1.pdf
IGLT65R110D2ATMA1
Hersteller: Infineon Technologies
Description: IGLT65R110D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R110D2ATMA1 IGLT65R110D2ATMA1.pdf
IGLT65R110D2ATMA1
Hersteller: Infineon Technologies
Description: IGLT65R110D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Produkt ist nicht verfügbar
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