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TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies infineon-tc38x-datasheet-en.pdf Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
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TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies infineon-tc38x-datasheet-en.pdf Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
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TC399XX256F300SBDLXUMA1 TC399XX256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I2S, LVDS, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit 6-Core
Data Converters: A/D 100 SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 1M x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
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TC399XP256F300SBDLXUMA1 TC399XP256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I2S, LVDS, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit 6-Core
Data Converters: A/D 100 SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 1M x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 2.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
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TC397XP256F300SBDKXUMA1 TC397XP256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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TC397XX256F300SBDKXUMA1 TC397XX256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCM88359CUBGT Infineon Technologies Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
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IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Produkt ist nicht verfügbar
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
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100+0.29 EUR
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BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
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BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
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57+0.37 EUR
79+0.27 EUR
100+0.24 EUR
500+0.18 EUR
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XE164F96F80LACFXQMA1 XE164F96F80LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 Infineon Technologies Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
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F3L420R12W3H7H21BPSA1 F3L420R12W3H7H21BPSA1 Infineon Technologies Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7 Description: IGBT MODULE 1200V 240A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
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F3L420R12W4H7H11BPSA1 F3L420R12W4H7H11BPSA1 Infineon Technologies Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b Description: IGBT MODULE 1200V 420A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
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IRFP2907PBFXKMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
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CYT2BL4CXAQ0AZEGSTHUYA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
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CYT2BL4CXAQ0AZEGSHQLA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
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TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
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TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
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TLE5046MTICPW2100HALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1988 Stücke:
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FF600R12KE4PBOSA1 FF600R12KE4PBOSA1 Infineon Technologies Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
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IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A TO262-3
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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IRG8P25N120KD-EPBF IRG8P25N120KD-EPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.12 EUR
10+4.59 EUR
25+4.21 EUR
100+3.8 EUR
250+3.59 EUR
500+3.56 EUR
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IAUZN04S7L046ATMA1 IAUZN04S7L046ATMA1 Infineon Technologies Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.6 EUR
15000+0.54 EUR
Mindestbestellmenge: 5000 Stücke
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IAUZN04S7L046ATMA1 IAUZN04S7L046ATMA1 Infineon Technologies Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 39388 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.48 EUR
14+1.56 EUR
50+1.15 EUR
100+1.02 EUR
500+0.8 EUR
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ICE5AR4770BZS1XKLA1 ICE5AR4770BZS1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5AR4770BZS1XKLA1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 26.5 W
Voltage - Start Up: 16 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.87 EUR
50+1.46 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.89 EUR
2000+0.86 EUR
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ICE5BR4780BZ1XKLA1 ICE5BR4780BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5BR4780BZ1XKLA1
Power (Watts): 27.5 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3 EUR
50+1.54 EUR
100+1.39 EUR
500+1.11 EUR
1000+0.93 EUR
2000+0.89 EUR
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ICE5BR3995BZ1XKLA1 ICE5BR3995BZ1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5BR3995BZ1XKLA1
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 950V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 30 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
50+1.99 EUR
100+1.8 EUR
500+1.43 EUR
1000+1.2 EUR
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ICE5AR3995BZ1XKLA1 ICE5AR3995BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5AR3995BZ1XKLA1
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 950V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 30 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.08 EUR
50+2.13 EUR
100+1.93 EUR
500+1.54 EUR
1000+1.3 EUR
2000+1.25 EUR
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ICE5BR2280BZ1XKLA1 ICE5BR2280BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5BR2280BZ1XKLA1
Output Isolation: Either
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 40 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
auf Bestellung 1901 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.52 EUR
50+2.2 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.45 EUR
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IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 Infineon Technologies IAUCN08S7N024-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-34
Current - Continuous Drain (Id) @ 25°C: 165A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 Infineon Technologies IAUCN08S7N024-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Current - Continuous Drain (Id) @ 25°C: 165A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-34
auf Bestellung 2829 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.2 EUR
10+4.02 EUR
50+3.09 EUR
100+2.78 EUR
500+2.26 EUR
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ICE5AR0680BZS1XKLA1 ICE5AR0680BZS1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5AR0680BZS1XKLA1
Power (Watts): 66 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
50+2.93 EUR
100+2.7 EUR
500+2.15 EUR
1000+1.9 EUR
Mindestbestellmenge: 4 Stücke
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TLE4803S16S0000XUMA2 TLE4803S16S0000XUMA2 Infineon Technologies Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe Description: POSITION SENS ATV
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle, Linear
Technology: Inductive
Actuator Type: External Magnet, Not Included
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TLE4803S16S0000XUMA2 TLE4803S16S0000XUMA2 Infineon Technologies Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe Description: POSITION SENS ATV
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle, Linear
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 TLE4801C16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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TLE4801C16S0000XUMA2 TLE4801C16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 TLE4801S16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 TLE4801S16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Qualification: AEC-Q100
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Produkt ist nicht verfügbar
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IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Infineon Technologies DS_IPZA60R099CM8_2_0.pdf Description: IPZA60R099CM8XKSA1
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-U02
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
30+5.09 EUR
60+4.62 EUR
90+4.37 EUR
150+4.09 EUR
210+3.94 EUR
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IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Infineon Technologies DS_IPZA60R099CM8_2_0.pdf Description: IPZA60R099CM8XKSA1
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-U02
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.12 EUR
10+6.05 EUR
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IMZA65R020M2HXKSA1 IMZA65R020M2HXKSA1 Infineon Technologies infineon-imza65r020m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.38 EUR
30+15.52 EUR
120+13.52 EUR
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IMLT65R075M2HXTMA1 IMLT65R075M2HXTMA1 Infineon Technologies infineon-imlt65r075m2h-datasheet-en.pdf Description: IMLT65R075M2HXTMA1
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-PowerSOP Module
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-16-6
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
auf Bestellung 1420 Stücke:
Lieferzeit 10-14 Tag (e)
2+12 EUR
10+8.04 EUR
50+6.35 EUR
100+5.81 EUR
500+4.86 EUR
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EVALTLE9180D31QKTOBO1 EVALTLE9180D31QKTOBO1 Infineon Technologies EVAL_TLE9180D-31QK_Web.pdf Description: EVAL BOARD FOR TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
Utilized IC / Part: TLE9180D-31QK
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
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XC2768X136F128LRAAKXUMA1 XC2768X136F128LRAAKXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3713STRLPBF IRL3713STRLPBF Infineon Technologies irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
Produkt ist nicht verfügbar
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IPS65R950C6AKMA1 IPS65R950C6AKMA1 Infineon Technologies DS_IPS65R950C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e81a77f502f Description: MOSFET N-CH 650V 4.5A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Bulk
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KP253HPXTMA1 KP253HPXTMA1 Infineon Technologies KP253.pdf Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQTXUMA1 CYPAS2174A132LQXQTXUMA1 Infineon Technologies Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff Description: CHARGER_ADAPTER
Supplier Device Package: 32-QFN (5x5)
Applications: Controller, USB
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 34V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 32-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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CYPAS2174A132LQXQXQLA1 CYPAS2174A132LQXQXQLA1 Infineon Technologies Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff Description: CHARGER_ADAPTER
Supplier Device Package: 32-QFN (5x5)
Applications: Controller, USB
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 34V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 32-WFQFN Exposed Pad
Packaging: Tray
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S26HS01GTGABHB020 S26HS01GTGABHB020 Infineon Technologies infineon-infineon-s26hs512ts26hs01gts26hl512ts26hl01gt-512-mb-64-mb-1-gb-128-mb-hs-t-1-8-v-hl-t-3-datasheet-ja.pdf Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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IKWH75N75EH7XKSA1 IKWH75N75EH7XKSA1 Infineon Technologies infineon-ikwh75n75eh7-datasheet-en.pdf Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-32
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IKZA75N75EH7XKSA1 IKZA75N75EH7XKSA1 Infineon Technologies infineon-ikza75n75eh7-datasheet-en.pdf Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/183ns
Switching Energy: 1.1mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
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IR2135STRPBF IR2135STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDL8011XUMA1 1EDL8011XUMA1 Infineon Technologies Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004 Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
Produkt ist nicht verfügbar
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TC387TP128F300SAEKXUMA2 infineon-tc38x-datasheet-en.pdf
TC387TP128F300SAEKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TC387TP128F300SAEKXUMA2 infineon-tc38x-datasheet-en.pdf
TC387TP128F300SAEKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
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1+98.94 EUR
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50+74.14 EUR
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TC399XX256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XX256F300SBDLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I2S, LVDS, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit 6-Core
Data Converters: A/D 100 SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 1M x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 6.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
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TC399XP256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XP256F300SBDLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LFBGA-516-10
Peripherals: DMA, I2S, LVDS, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Core Size: 32-Bit 6-Core
Data Converters: A/D 100 SAR, Sigma-Delta
Core Processor: TriCore™
EEPROM Size: 1M x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 150°C (TA)
RAM Size: 2.75M x 8
Program Memory Size: 16MB (16M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 516-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TC397XP256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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TC397XX256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XX256F300SBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
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BCM88359CUBGT
Hersteller: Infineon Technologies
Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF60B217 irf60b217
IRF60B217
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
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IRF60B217 irf60b217
IRF60B217
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Produkt ist nicht verfügbar
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Hersteller: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
Produkt ist nicht verfügbar
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Hersteller: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
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29+0.74 EUR
47+0.44 EUR
66+0.32 EUR
100+0.29 EUR
500+0.2 EUR
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BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Hersteller: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
Produkt ist nicht verfügbar
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BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Hersteller: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
auf Bestellung 1087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
57+0.37 EUR
79+0.27 EUR
100+0.24 EUR
500+0.18 EUR
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XE164F96F80LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F96F80LACFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIGW40N65H5XKSA1 Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c
AIGW40N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+18.31 EUR
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F3L420R12W3H7H21BPSA1 Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7
F3L420R12W3H7H21BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 240A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
auf Bestellung 10 Stücke:
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1+159.45 EUR
8+144.55 EUR
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F3L420R12W4H7H11BPSA1 Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b
F3L420R12W4H7H11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 420A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
auf Bestellung 18 Stücke:
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AnzahlPrivatkunde
1+336.38 EUR
6+311.48 EUR
12+303.24 EUR
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IRFP2907PBFXKMA1
Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSTHUYA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSHQLA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Produkt ist nicht verfügbar
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TLE5046MTICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
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TLE5046MTICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE5046MTICPW2100HALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
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FF600R12KE4PBOSA1 Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf
FF600R12KE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
auf Bestellung 128 Stücke:
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AnzahlPrivatkunde
2+364 EUR
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IPI320N20N3GAKSA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPI320N20N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO262-3
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+88.62 EUR
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IRG8P25N120KD-EPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KD-EPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2968 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
10+4.59 EUR
25+4.21 EUR
100+3.8 EUR
250+3.59 EUR
500+3.56 EUR
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IAUZN04S7L046ATMA1 Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd
IAUZN04S7L046ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.6 EUR
15000+0.54 EUR
Mindestbestellmenge: 5000 Stücke
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IAUZN04S7L046ATMA1 Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd
IAUZN04S7L046ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 39388 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
14+1.56 EUR
50+1.15 EUR
100+1.02 EUR
500+0.8 EUR
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ICE5AR4770BZS1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5AR4770BZS1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR4770BZS1XKLA1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 26.5 W
Voltage - Start Up: 16 V
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
8+2.87 EUR
50+1.46 EUR
100+1.32 EUR
500+1.05 EUR
1000+0.89 EUR
2000+0.86 EUR
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ICE5BR4780BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR4780BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR4780BZ1XKLA1
Power (Watts): 27.5 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3 EUR
50+1.54 EUR
100+1.39 EUR
500+1.11 EUR
1000+0.93 EUR
2000+0.89 EUR
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ICE5BR3995BZ1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5BR3995BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR3995BZ1XKLA1
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 950V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 30 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
50+1.99 EUR
100+1.8 EUR
500+1.43 EUR
1000+1.2 EUR
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ICE5AR3995BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5AR3995BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR3995BZ1XKLA1
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 950V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 30 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
50+2.13 EUR
100+1.93 EUR
500+1.54 EUR
1000+1.3 EUR
2000+1.25 EUR
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ICE5BR2280BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR2280BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR2280BZ1XKLA1
Output Isolation: Either
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
Power (Watts): 40 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
auf Bestellung 1901 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
50+2.2 EUR
100+1.98 EUR
500+1.58 EUR
1000+1.45 EUR
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IAUCN08S7N024ATMA1 IAUCN08S7N024-Data-Sheet-10-Infineon.pdf
IAUCN08S7N024ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-34
Current - Continuous Drain (Id) @ 25°C: 165A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUCN08S7N024ATMA1 IAUCN08S7N024-Data-Sheet-10-Infineon.pdf
IAUCN08S7N024ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Current - Continuous Drain (Id) @ 25°C: 165A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-34
auf Bestellung 2829 Stücke:
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AnzahlPrivatkunde
4+6.2 EUR
10+4.02 EUR
50+3.09 EUR
100+2.78 EUR
500+2.26 EUR
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ICE5AR0680BZS1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5AR0680BZS1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR0680BZS1XKLA1
Power (Watts): 66 W
Voltage - Start Up: 16 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-7-10
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Topology: Buck, Flyback
Output Isolation: Either
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 100kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Tube
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.26 EUR
50+2.93 EUR
100+2.7 EUR
500+2.15 EUR
1000+1.9 EUR
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TLE4803S16S0000XUMA2 Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe
TLE4803S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle, Linear
Technology: Inductive
Actuator Type: External Magnet, Not Included
Produkt ist nicht verfügbar
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TLE4803S16S0000XUMA2 Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe
TLE4803S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle, Linear
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Produkt ist nicht verfügbar
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TLE4801C16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801C16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
Produkt ist nicht verfügbar
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TLE4801C16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801C16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLE4801S16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Qualification: AEC-Q100
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLE4801S16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Qualification: AEC-Q100
Operating Temperature: -40°C ~ 150°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Grade: Automotive
Output Signal: Digital
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-TSSOP-16
For Measuring: Angle
Technology: Inductive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.4V ~ 6V
Termination Style: SMD (SMT) Tab
Produkt ist nicht verfügbar
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IPZA60R099CM8XKSA1 DS_IPZA60R099CM8_2_0.pdf
IPZA60R099CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-U02
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+5.09 EUR
60+4.62 EUR
90+4.37 EUR
150+4.09 EUR
210+3.94 EUR
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IPZA60R099CM8XKSA1 DS_IPZA60R099CM8_2_0.pdf
IPZA60R099CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO247-4-U02
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.12 EUR
10+6.05 EUR
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IMZA65R020M2HXKSA1 infineon-imza65r020m2h-datasheet-en.pdf
IMZA65R020M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 374 Stücke:
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1+25.38 EUR
30+15.52 EUR
120+13.52 EUR
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IMLT65R075M2HXTMA1 infineon-imlt65r075m2h-datasheet-en.pdf
IMLT65R075M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-PowerSOP Module
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-16-6
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
auf Bestellung 1420 Stücke:
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2+12 EUR
10+8.04 EUR
50+6.35 EUR
100+5.81 EUR
500+4.86 EUR
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EVALTLE9180D31QKTOBO1 EVAL_TLE9180D-31QK_Web.pdf
EVALTLE9180D31QKTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
Utilized IC / Part: TLE9180D-31QK
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
auf Bestellung 2 Stücke:
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1+1178.15 EUR
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XC2768X136F128LRAAKXUMA1 fundamentals-of-power-semiconductors
XC2768X136F128LRAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3713STRLPBF irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d
IRL3713STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
Produkt ist nicht verfügbar
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IPS65R950C6AKMA1 DS_IPS65R950C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e81a77f502f
IPS65R950C6AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-11
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Bulk
auf Bestellung 488448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
568+0.95 EUR
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KP253HPXTMA1 KP253.pdf
KP253HPXTMA1
Hersteller: Infineon Technologies
Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQTXUMA1 Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff
CYPAS2174A132LQXQTXUMA1
Hersteller: Infineon Technologies
Description: CHARGER_ADAPTER
Supplier Device Package: 32-QFN (5x5)
Applications: Controller, USB
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 34V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 32-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+2.77 EUR
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CYPAS2174A132LQXQXQLA1 Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff
CYPAS2174A132LQXQXQLA1
Hersteller: Infineon Technologies
Description: CHARGER_ADAPTER
Supplier Device Package: 32-QFN (5x5)
Applications: Controller, USB
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Input: 34V
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 32-WFQFN Exposed Pad
Packaging: Tray
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.37 EUR
10+4.01 EUR
25+3.67 EUR
100+3.3 EUR
490+3.01 EUR
980+2.92 EUR
1470+2.88 EUR
2940+2.81 EUR
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S26HS01GTGABHB020 infineon-infineon-s26hs512ts26hs01gts26hl512ts26hl01gt-512-mb-64-mb-1-gb-128-mb-hs-t-1-8-v-hl-t-3-datasheet-ja.pdf
S26HS01GTGABHB020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 415 Stücke:
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AnzahlPrivatkunde
1+50.62 EUR
10+46.89 EUR
25+45.4 EUR
50+44.28 EUR
100+43.17 EUR
260+41.69 EUR
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IKWH75N75EH7XKSA1 infineon-ikwh75n75eh7-datasheet-en.pdf
IKWH75N75EH7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-32
Produkt ist nicht verfügbar
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IKZA75N75EH7XKSA1 infineon-ikza75n75eh7-datasheet-en.pdf
IKZA75N75EH7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/183ns
Switching Energy: 1.1mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.2 EUR
10+9.6 EUR
240+6.35 EUR
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IR2135STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDL8011XUMA1 Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004
1EDL8011XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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