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REFICL5102HV350WTOBO1 REFICL5102HV350WTOBO1 Infineon Technologies Description: REFICL5102HV350WTOBO1
Features: Dimmable
Packaging: Box
Voltage - Output: 56V
Voltage - Input: 249 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 6.25A
Utilized IC / Part: ICL5102HV
Outputs and Type: 1 Non-Isolated Output
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IPA50R380CEXKSA2 IPA50R380CEXKSA2 Infineon Technologies DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063 Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
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CY62157G18-55BVXA CY62157G18-55BVXA Infineon Technologies Infineon-CY62157G_AUTOMOTIVE_8-MBIT_(512K_WORDS_X_16-BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddcea085a520f Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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FS75R07N2E4BPSA1 FS75R07N2E4BPSA1 Infineon Technologies Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979 Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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FS75R07N2E4B11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1 Infineon Technologies ISA170230C04LMDSXTMA1.pdf Description: ISA170230C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1 Infineon Technologies ISA170230C04LMDSXTMA1.pdf Description: ISA170230C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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BTM9020EPXUMA1 BTM9020EPXUMA1 Infineon Technologies infineon-btm9020ep-btm9021ep-datasheet-en.pdf Description: DC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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BTM9020EPXUMA1 BTM9020EPXUMA1 Infineon Technologies infineon-btm9020ep-btm9021ep-datasheet-en.pdf Description: DC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
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BTM9021EPXUMA1 BTM9021EPXUMA1 Infineon Technologies Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe Description: DC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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BTM9021EPXUMA1 BTM9021EPXUMA1 Infineon Technologies Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe Description: DC_MOTOR_CONTROL
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
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10+3.64 EUR
25+3.33 EUR
100+2.99 EUR
250+2.82 EUR
500+2.76 EUR
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KITBTM902021TOBO1 KITBTM902021TOBO1 Infineon Technologies Infineon-BTM90xx-ArduinoShieldUserGuide-Z8F80497277-UserManual-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018fba2c5e5e17fc Description: EVAL BOARD BTM9020EP BTM9021EP
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Platform: Arduino
Utilized IC / Part: BTM90xxEP
Contents: Board(s)
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CYPET121XQMA1 CYPET121XQMA1 Infineon Technologies Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96 Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
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CY8C4146AZS-S255 CY8C4146AZS-S255 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
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CY8C4146AZS-S255T CY8C4146AZS-S255T Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
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AIKQB200N75CP2ALSA1 AIKQB200N75CP2ALSA1 Infineon Technologies Infineon-AIKQB200N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c41a5e73f8 Description: AIKQB200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 200A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.256 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
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CY8C4147LQE-S283 CY8C4147LQE-S283 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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10+12.29 EUR
25+11.41 EUR
100+10.42 EUR
490+9.69 EUR
980+9.45 EUR
1470+9.33 EUR
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BB 659C-02V H7902 BB 659C-02V H7902 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 659C-02V H7902 BB 659C-02V H7902 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB659C02VH7912XTSA1 BB659C02VH7912XTSA1 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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IAUCN04S7L004ATMA1 IAUCN04S7L004ATMA1 Infineon Technologies Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L004ATMA1 IAUCN04S7L004ATMA1 Infineon Technologies Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
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100+3.15 EUR
500+2.57 EUR
1000+2.49 EUR
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CY8CPROTO-040T-MS CY8CPROTO-040T-MS Infineon Technologies Description: CY8CPROTO-040T-MS
Utilized IC / Part: CY8C4046LQI-T452
Core Processor: ARM® Cortex®-M0+
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
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T1190N18TOFVTXPSA1 T1190N18TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
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T1500N14TOFVTXPSA1 T1500N14TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
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T1330N22TOFVTXPSA1 T1330N22TOFVTXPSA1 Infineon Technologies Infineon-T1330N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712b08a0734036 Description: SCR MODULE 2.2KV 2600A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 26500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1330 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2600 A
Voltage - Off State: 2.2 kV
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T930N36TOFVTXPSA1 Infineon Technologies Infineon-T930N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afb8eb8400d Description: SCR MODULE 3.6KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 930 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
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IPAN60R180CM8XKSA1 IPAN60R180CM8XKSA1 Infineon Technologies Infineon-IPAN60R180CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8ccf4d9a0401 Description: IPAN60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
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IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Infineon Technologies infineon-ipza60r180p7-ds-en.pdf Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 470 Stücke:
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CYTMA568-56LQI44BB Infineon Technologies CYTMA568_Summary_RevA_5-26-16.pdf Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
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AUIRFU4104 AUIRFU4104 Infineon Technologies AUIRF%28R%2CU%294104.pdf Description: MOSFET N-CH 40V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IQDH29NE2LM5SCATMA1 IQDH29NE2LM5SCATMA1 Infineon Technologies Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
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IQDH29NE2LM5SCATMA1 IQDH29NE2LM5SCATMA1 Infineon Technologies Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
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100+3.78 EUR
500+3.49 EUR
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IQD016N08NM5SCATMA1 IQD016N08NM5SCATMA1 Infineon Technologies Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
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IQD016N08NM5SCATMA1 IQD016N08NM5SCATMA1 Infineon Technologies Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
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XE162FL20F80LRAAKXUMA1 XE162FL20F80LRAAKXUMA1 Infineon Technologies Infineon-XE162XL-DS-v01_02-en.pdf?fileId=db3a30432e398416012e4d819be85d9f Description: IC MCU 16BIT 160KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE162HM-48F80L AA SAF-XE162HM-48F80L AA Infineon Technologies XE162xM.pdf Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DEMOBOARDTLD1314ELTOBO1 DEMOBOARDTLD1314ELTOBO1 Infineon Technologies Infineon-Infineon_Basic_LED_Driver_Family_Demo_Board_20130726-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f14a0ad5b7e93 Description: DEMOBOARD TLD1314EL
Packaging: Box
Contents: Board(s)
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FS150R07N3E4BOSA1 FS150R07N3E4BOSA1 Infineon Technologies Infineon-FS150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f44ea50311f66 Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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D400N18BVFXPSA1 D400N18BVFXPSA1 Infineon Technologies D400N_1-6-06.pdf Description: DIODE STANDARD 1800V 450A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
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PEF82912HV1.4 Infineon Technologies Description: Q-SMINT SECOND GEN. MODULAR ISDN
Packaging: Bulk
auf Bestellung 752 Stücke:
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PEF82902FV1.1 PEF82902FV1.1 Infineon Technologies INFNS03723-1.pdf?t.download=true&u=5oefqw Description: PEF82902 - T-SMINTI SECOND GEN.
Packaging: Bulk
auf Bestellung 2880 Stücke:
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ISA170170N04LMDSXTMA1 ISA170170N04LMDSXTMA1 Infineon Technologies Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a Description: ISA170170N04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA170170N04LMDSXTMA1 ISA170170N04LMDSXTMA1 Infineon Technologies Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a Description: ISA170170N04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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IRFR4105TR IRFR4105TR Infineon Technologies irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9 Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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AUIRFR4105 AUIRFR4105 Infineon Technologies AUIRFR4105.pdf Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXIT CY8CMBR3108-LQXIT Infineon Technologies Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Description: IC CAP SENSE 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Number of Inputs: Up to 8
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: Yes
LED Driver Channels: Up to 4
DigiKey Programmable: Not Verified
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BTS700151ESPDAUGHBDTOBO1 BTS700151ESPDAUGHBDTOBO1 Infineon Technologies infineon-profet-customer-evaluation-kit-description-usermanual-en.pdf Description: BTS70015-1ESP DAUGHBD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Platform: Arduino
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PROF2BTS70021EPPDBTOBO1 PROF2BTS70021EPPDBTOBO1 Infineon Technologies Description: PROF_2 BTS7002-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7002-1EPP
Platform: Arduino
auf Bestellung 1 Stücke:
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CYT2B78CADQ0AZEGS CYT2B78CADQ0AZEGS Infineon Technologies Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2 Description: TVII-B-E-1M-176 CFLASH 1MB
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
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10+23.13 EUR
25+21.61 EUR
100+19.94 EUR
400+18.81 EUR
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CY91F487TPMC-G-UJE1 Infineon Technologies Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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CY91F487PMC-GE1 CY91F487PMC-GE1 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 14x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, FIFO, SIO
Peripherals: DMA, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TD140N16SOFHPSA1 TD140N16SOFHPSA1 Infineon Technologies Infineon-TT140N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d052319e2e66 Description: SCR MODULE 1.6KV 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 400 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CYW55513IUBGT CYW55513IUBGT Infineon Technologies Infineon-AIROC_TM_CYW55513_2_1_Wi-Fi_Bluetooth_R_combo_PRODUCT_BRIEF-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024f63c0f3e31 Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
auf Bestellung 45 Stücke:
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2+18.71 EUR
10+14.58 EUR
25+13.54 EUR
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CYW55911IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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CYW55912IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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CYW55913IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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FM24C16B-GTR FM24C16B-GTR Infineon Technologies Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
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10+3.9 EUR
25+3.8 EUR
50+3.7 EUR
100+3.62 EUR
250+3.51 EUR
500+3.43 EUR
1000+3.34 EUR
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IRFHM8329TRPBF IRFHM8329TRPBF Infineon Technologies irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
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IRG7PH35U-EP IRG7PH35U-EP Infineon Technologies IRG7PH35UPBF%2CU-EP.pdf Description: IGBT TRENCH 1200V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
Produkt ist nicht verfügbar
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REFICL5102HV350WTOBO1
REFICL5102HV350WTOBO1
Hersteller: Infineon Technologies
Description: REFICL5102HV350WTOBO1
Features: Dimmable
Packaging: Box
Voltage - Output: 56V
Voltage - Input: 249 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 6.25A
Utilized IC / Part: ICL5102HV
Outputs and Type: 1 Non-Isolated Output
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IPA50R380CEXKSA2 DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063
IPA50R380CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
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CY62157G18-55BVXA Infineon-CY62157G_AUTOMOTIVE_8-MBIT_(512K_WORDS_X_16-BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddcea085a520f
CY62157G18-55BVXA
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS75R07N2E4BPSA1 Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979
FS75R07N2E4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R07N2E4B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
ISA170230C04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170230C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
ISA170230C04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170230C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 496 Stücke:
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7+3.08 EUR
11+1.95 EUR
100+1.3 EUR
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BTM9020EPXUMA1 infineon-btm9020ep-btm9021ep-datasheet-en.pdf
BTM9020EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BTM9020EPXUMA1 infineon-btm9020ep-btm9021ep-datasheet-en.pdf
BTM9020EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tube
Produkt ist nicht verfügbar
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BTM9021EPXUMA1 Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe
BTM9021EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTM9021EPXUMA1 Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe
BTM9021EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM, SPI
Current - Output: 8.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
auf Bestellung 2898 Stücke:
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5+4.88 EUR
10+3.64 EUR
25+3.33 EUR
100+2.99 EUR
250+2.82 EUR
500+2.76 EUR
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KITBTM902021TOBO1 Infineon-BTM90xx-ArduinoShieldUserGuide-Z8F80497277-UserManual-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018fba2c5e5e17fc
KITBTM902021TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD BTM9020EP BTM9021EP
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Platform: Arduino
Utilized IC / Part: BTM90xxEP
Contents: Board(s)
auf Bestellung 1 Stücke:
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1+142.48 EUR
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CYPET121XQMA1 Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96
CYPET121XQMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
Produkt ist nicht verfügbar
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CY8C4146AZS-S255
CY8C4146AZS-S255
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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CY8C4146AZS-S255T
CY8C4146AZS-S255T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 54
Grade: Automotive
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Produkt ist nicht verfügbar
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AIKQB200N75CP2ALSA1 Infineon-AIKQB200N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c41a5e73f8
AIKQB200N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKQB200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 200A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.256 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.51 EUR
30+15.58 EUR
120+13.4 EUR
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CY8C4147LQE-S283 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQE-S283
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4896 Stücke:
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2+15.85 EUR
10+12.29 EUR
25+11.41 EUR
100+10.42 EUR
490+9.69 EUR
980+9.45 EUR
1470+9.33 EUR
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BB 659C-02V H7902 bb639c_bb659cseries.pdf
BB 659C-02V H7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 659C-02V H7902 bb639c_bb659cseries.pdf
BB 659C-02V H7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB659C02VH7912XTSA1 bb639c_bb659cseries.pdf
BB659C02VH7912XTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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IAUCN04S7L004ATMA1 Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70
IAUCN04S7L004ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L004ATMA1 Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70
IAUCN04S7L004ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 3702 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.94 EUR
10+4.52 EUR
100+3.15 EUR
500+2.57 EUR
1000+2.49 EUR
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CY8CPROTO-040T-MS
CY8CPROTO-040T-MS
Hersteller: Infineon Technologies
Description: CY8CPROTO-040T-MS
Utilized IC / Part: CY8C4046LQI-T452
Core Processor: ARM® Cortex®-M0+
Contents: Board(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
auf Bestellung 2 Stücke:
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T1190N18TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T1500N14TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N14TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T1330N22TOFVTXPSA1 Infineon-T1330N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712b08a0734036
T1330N22TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 2600A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 26500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1330 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2600 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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T930N36TOFVTXPSA1 Infineon-T930N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afb8eb8400d
Hersteller: Infineon Technologies
Description: SCR MODULE 3.6KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 930 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
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IPAN60R180CM8XKSA1 Infineon-IPAN60R180CM8-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c8d2fe47b018d8ccf4d9a0401
IPAN60R180CM8XKSA1
Hersteller: Infineon Technologies
Description: IPAN60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
50+2.23 EUR
100+2 EUR
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IPZA60R180P7XKSA1 infineon-ipza60r180p7-ds-en.pdf
IPZA60R180P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
133+4.13 EUR
Mindestbestellmenge: 133 Stücke
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CYTMA568-56LQI44BB CYTMA568_Summary_RevA_5-26-16.pdf
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
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AUIRFU4104 AUIRF%28R%2CU%294104.pdf
AUIRFU4104
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IQDH29NE2LM5SCATMA1 Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c
IQDH29NE2LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
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IQDH29NE2LM5SCATMA1 Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c
IQDH29NE2LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
auf Bestellung 4828 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.08 EUR
10+5.34 EUR
100+3.78 EUR
500+3.49 EUR
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IQD016N08NM5SCATMA1 Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c
IQD016N08NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
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IQD016N08NM5SCATMA1 Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c
IQD016N08NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 1315 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.82 EUR
10+7.93 EUR
100+5.71 EUR
500+5.28 EUR
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XE162FL20F80LRAAKXUMA1 Infineon-XE162XL-DS-v01_02-en.pdf?fileId=db3a30432e398416012e4d819be85d9f
XE162FL20F80LRAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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SAF-XE162HM-48F80L AA XE162xM.pdf
SAF-XE162HM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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DEMOBOARDTLD1314ELTOBO1 Infineon-Infineon_Basic_LED_Driver_Family_Demo_Board_20130726-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f14a0ad5b7e93
DEMOBOARDTLD1314ELTOBO1
Hersteller: Infineon Technologies
Description: DEMOBOARD TLD1314EL
Packaging: Box
Contents: Board(s)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+321.66 EUR
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FS150R07N3E4BOSA1 Infineon-FS150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f44ea50311f66
FS150R07N3E4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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D400N18BVFXPSA1 D400N_1-6-06.pdf
D400N18BVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1800V 450A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
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PEF82912HV1.4
Hersteller: Infineon Technologies
Description: Q-SMINT SECOND GEN. MODULAR ISDN
Packaging: Bulk
auf Bestellung 752 Stücke:
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16+33.03 EUR
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PEF82902FV1.1 INFNS03723-1.pdf?t.download=true&u=5oefqw
PEF82902FV1.1
Hersteller: Infineon Technologies
Description: PEF82902 - T-SMINTI SECOND GEN.
Packaging: Bulk
auf Bestellung 2880 Stücke:
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11+49.81 EUR
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ISA170170N04LMDSXTMA1 Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a
ISA170170N04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170170N04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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ISA170170N04LMDSXTMA1 Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a
ISA170170N04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170170N04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 395 Stücke:
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11+1.96 EUR
18+1.23 EUR
100+0.8 EUR
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IRFR4105TR irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9
IRFR4105TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR4105 AUIRFR4105.pdf
AUIRFR4105
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
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CY8CMBR3108-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3108-LQXIT
Hersteller: Infineon Technologies
Description: IC CAP SENSE 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Number of Inputs: Up to 8
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: Yes
LED Driver Channels: Up to 4
DigiKey Programmable: Not Verified
auf Bestellung 5839 Stücke:
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5+4.71 EUR
10+3.5 EUR
25+3.2 EUR
100+2.87 EUR
250+2.71 EUR
500+2.64 EUR
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BTS700151ESPDAUGHBDTOBO1 infineon-profet-customer-evaluation-kit-description-usermanual-en.pdf
BTS700151ESPDAUGHBDTOBO1
Hersteller: Infineon Technologies
Description: BTS70015-1ESP DAUGHBD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Platform: Arduino
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PROF2BTS70021EPPDBTOBO1
PROF2BTS70021EPPDBTOBO1
Hersteller: Infineon Technologies
Description: PROF_2 BTS7002-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7002-1EPP
Platform: Arduino
auf Bestellung 1 Stücke:
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CYT2B78CADQ0AZEGS Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2
CYT2B78CADQ0AZEGS
Hersteller: Infineon Technologies
Description: TVII-B-E-1M-176 CFLASH 1MB
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
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1+29.19 EUR
10+23.13 EUR
25+21.61 EUR
100+19.94 EUR
400+18.81 EUR
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CY91F487TPMC-G-UJE1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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CY91F487PMC-GE1 download
CY91F487PMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 14x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, FIFO, SIO
Peripherals: DMA, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 77
DigiKey Programmable: Not Verified
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TD140N16SOFHPSA1 Infineon-TT140N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d052319e2e66
TD140N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 400 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CYW55513IUBGT Infineon-AIROC_TM_CYW55513_2_1_Wi-Fi_Bluetooth_R_combo_PRODUCT_BRIEF-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024f63c0f3e31
CYW55513IUBGT
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
auf Bestellung 45 Stücke:
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2+18.71 EUR
10+14.58 EUR
25+13.54 EUR
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CYW55911IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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CYW55912IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Hersteller: Infineon Technologies
Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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CYW55913IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Hersteller: Infineon Technologies
Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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FM24C16B-GTR Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C16B-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 5500 Stücke:
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6+4.16 EUR
10+3.9 EUR
25+3.8 EUR
50+3.7 EUR
100+3.62 EUR
250+3.51 EUR
500+3.43 EUR
1000+3.34 EUR
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IRFHM8329TRPBF irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d
IRFHM8329TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
auf Bestellung 480 Stücke:
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AnzahlPrivatkunde
480+0.56 EUR
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IRG7PH35U-EP IRG7PH35UPBF%2CU-EP.pdf
IRG7PH35U-EP
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
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