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AIMCQ120R120M1TXTMA1 AIMCQ120R120M1TXTMA1 Infineon Technologies Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27 Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMBG120R120M1XTMA1 AIMBG120R120M1XTMA1 Infineon Technologies Infineon-AIMBG120R120M1-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1b113965b24 Description: SICFET N-CH 1200V 22A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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AIMZHN120R120M1TXKSA1 AIMZHN120R120M1TXKSA1 Infineon Technologies Infineon-AIMZHN120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68fc61634aa1 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-14
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
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ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
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ISC079N15NM6ATMA1 ISC079N15NM6ATMA1 Infineon Technologies Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
auf Bestellung 4622 Stücke:
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10+4.77 EUR
100+3.7 EUR
500+3.12 EUR
1000+2.89 EUR
2000+2.87 EUR
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IMW65R026M2HXKSA1 IMW65R026M2HXKSA1 Infineon Technologies IMW65R026M2HXKSA1.pdf Description: IMW65R026M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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CYW43438LKUBGT Infineon Technologies Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
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IGLD65R110D2AUMA1 Infineon Technologies Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGLD65R110D2AUMA1 Infineon Technologies Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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500+3.31 EUR
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CY9BF404RAPMC-G-UNE2 CY9BF404RAPMC-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 256KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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S29GL128P90FAIR12 S29GL128P90FAIR12 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S29GL128P90FAIR12 S29GL128P90FAIR12 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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KITXMC7200MC1TOBO1 KITXMC7200MC1TOBO1 Infineon Technologies Infineon-KIT_XMC7200_MC1_product_brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192e53ce9337b6a Description: KITXMC7200MC1TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC7200
Primary Attributes: Isolated
Embedded: Yes, MCU
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KITXMC72EVK KITXMC72EVK Infineon Technologies Infineon-KIT_XMC72_EVK_XMC7200-evaluation-kit-quick-start-guide-GettingStarted-v01_00-EN.pdf?fileId=8ac78c8c8412f8d301842e60df937b6f Description: EVALUATION BOARD WHICH CARRIES A
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: ARM® Cortex®-M0, Cortex®-M7
Utilized IC / Part: XMC7200
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XMC7241SCQ040XAAXUMA1 XMC7241SCQ040XAAXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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XMC7200-F176K8384AA XMC7200-F176K8384AA Infineon Technologies Infineon-XMC-7200-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443173374425 Description: IC MCU 32BIT 8.18MB 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 81x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
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S25FL512SDSMFB010 S25FL512SDSMFB010 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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1+19.15 EUR
10+17.77 EUR
25+17.22 EUR
40+16.94 EUR
80+16.52 EUR
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S25FL512SAGMFVR13 S25FL512SAGMFVR13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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BB 659C-02V E7902 BB 659C-02V E7902 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 659C-02V E7908 BB 659C-02V E7908 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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BB 664-02V E7902 BB 664-02V E7902 Infineon Technologies bb644_bb664series.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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BB 689-02V E7902 BB 689-02V E7902 Infineon Technologies bb669_bb689series.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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BB 689-02V E7908 BB 689-02V E7908 Infineon Technologies bb669_bb689series.pdf Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
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SKP02N60XKSA1 SKP02N60XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
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SGD02N60BUMA1 SGD02N60BUMA1 Infineon Technologies SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6 Description: IGBT NPT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
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AUIRGR4045D AUIRGR4045D Infineon Technologies auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGR4045DPBF IRGR4045DPBF Infineon Technologies IRGR4045DPbF.pdf Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 Infineon Technologies Infineon-FF200R12KE3-DS-v03_01-en_cn.pdf?fileId=db3a30433dcf2fc4013dd01c80660219 Description: MEDIUM POWER 62MM
Packaging: Bulk
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IRS2004PBF IRS2004PBF Infineon Technologies irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2003SPBF IRS2003SPBF Infineon Technologies irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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FZ1800R45HL4S7BPSA1 FZ1800R45HL4S7BPSA1 Infineon Technologies Infineon-FZ1800R45HL4_S7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d2610057b Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 25V, 1800A
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 4000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 297 nF @ 25 V
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FZ1800R17HE4B9HOSA2 FZ1800R17HE4B9HOSA2 Infineon Technologies Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244 Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
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FZ1800R17HE4B9HOSA2 FZ1800R17HE4B9HOSA2 Infineon Technologies Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244 Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
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SAX-XC878-16FFA 5V AC SAX-XC878-16FFA 5V AC Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
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SAX-XC878CM-13FFA 5V AC SAX-XC878CM-13FFA 5V AC Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC878CM-16FFI 3V3 AA SAF-XC878CM-16FFI 3V3 AA Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC878CM-16FFI 5V AA SAF-XC878CM-16FFI 5V AA Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAX-XC878C-16FFA 5V AA SAX-XC878C-16FFA 5V AA Infineon Technologies Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFP2907 AUIRFP2907 Infineon Technologies IRSDS11759-1.pdf?t.download=true&u=5oefqw Description: AUIRFP2907 - 75V-100V N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
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IDD03SG60CXTMA1 IDD03SG60CXTMA1 Infineon Technologies Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53 Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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IFX7805ABTCATMA1 IFX7805ABTCATMA1 Infineon Technologies IFX7805.pdf Description: IC REG LINEAR 5V 1A PG-TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
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TLI5570RE35E1E0001XTSA1 TLI5570RE35E1E0001XTSA1 Infineon Technologies Infineon-TLI5570-RE35E1-E0001-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0193e37b1755776b Description: TLI5570RE35E1E0001XTSA1
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Polarization: Bidirectional
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: DC ~ 1.1MHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Sensor Type: Current Switch
Linearity: ±1%
For Measuring: AC/DC
Current - Supply (Max): 1.5mA
Supplier Device Package: PG-SOT23-6-4
Number of Channels: 1
Produkt ist nicht verfügbar
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TLI5570RE35E1E0001XTSA1 TLI5570RE35E1E0001XTSA1 Infineon Technologies Infineon-TLI5570-RE35E1-E0001-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0193e37b1755776b Description: TLI5570RE35E1E0001XTSA1
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Polarization: Bidirectional
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: DC ~ 1.1MHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Sensor Type: Current Switch
Linearity: ±1%
For Measuring: AC/DC
Current - Supply (Max): 1.5mA
Supplier Device Package: PG-SOT23-6-4
Number of Channels: 1
Produkt ist nicht verfügbar
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IRFSL7787PBF IRFSL7787PBF Infineon Technologies irfs7787pbf.pdf?fileId=5546d462533600a40153563ad73d21eb Description: MOSFET N-CH 75V 76A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
Produkt ist nicht verfügbar
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IRFSL7730PBF IRFSL7730PBF Infineon Technologies irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc Description: MOSFET N-CH 75V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
Produkt ist nicht verfügbar
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IRFSL7734PBF IRFSL7734PBF Infineon Technologies irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2 Description: MOSFET N-CH 75V 183A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
Produkt ist nicht verfügbar
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IPB70N12S3L12ATMA1 IPB70N12S3L12ATMA1 Infineon Technologies IPx70N12S3L-12.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
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IAUMN10S5N017GAUMA1 IAUMN10S5N017GAUMA1 Infineon Technologies Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
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S29GL256S10DHSS10 S29GL256S10DHSS10 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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S29GL256S10DHSS20 S29GL256S10DHSS20 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL256S10DHSS60 S29GL256S10DHSS60 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL256S10DHSS53 S29GL256S10DHSS53 Infineon Technologies Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F594BHSPMC-GSE1 CY91F594BHSPMC-GSE1 Infineon Technologies Description: IC MCU 32B 1.0625MB FLSH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 872K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY91F592BSPMC-GSE1 CY91F592BSPMC-GSE1 Infineon Technologies Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY91F592BHSPMC-GSE1 CY91F592BHSPMC-GSE1 Infineon Technologies Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY91F594BSPMC-GSE1 CY91F594BSPMC-GSE1 Infineon Technologies Description: IC MCU 32B 1.0625MB FLSH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 872K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F467DAPFVS-GS-N2K5E2 MB91F467DAPFVS-GS-N2K5E2 Infineon Technologies Description: IC MCU 32B 1.0625MB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F592BHPMC-GSK5E1 MB91F592BHPMC-GSK5E1 Infineon Technologies Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F592BHPMC-GSK5E2 MB91F592BHPMC-GSK5E2 Infineon Technologies Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MB91F592BHSPMC-GS-ALK5E1 MB91F592BHSPMC-GS-ALK5E1 Infineon Technologies Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMCQ120R120M1TXTMA1 Infineon-AIMCQ120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01910fe652966b27
AIMCQ120R120M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 161W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMBG120R120M1XTMA1 Infineon-AIMBG120R120M1-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c8fc2dd9c018fe1b113965b24
AIMBG120R120M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 22A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMZHN120R120M1TXKSA1 Infineon-AIMZHN120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68fc61634aa1
AIMZHN120R120M1TXKSA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-14
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISC079N15NM6ATMA1 Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058
ISC079N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
Produkt ist nicht verfügbar
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ISC079N15NM6ATMA1 Infineon-ISC079N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907753460f7058
ISC079N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 36A, 15V
Power Dissipation (Max): 3W (Ta), 165W (Tc)
Vgs(th) (Max) @ Id: 4V @ 77µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 75 V
auf Bestellung 4622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.76 EUR
10+4.77 EUR
100+3.7 EUR
500+3.12 EUR
1000+2.89 EUR
2000+2.87 EUR
Mindestbestellmenge: 3
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IMW65R026M2HXKSA1 IMW65R026M2HXKSA1.pdf
IMW65R026M2HXKSA1
Hersteller: Infineon Technologies
Description: IMW65R026M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.09 EUR
30+10.89 EUR
120+9.31 EUR
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CYW43438LKUBGT
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Produkt ist nicht verfügbar
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IGLD65R110D2AUMA1 Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.71 EUR
Mindestbestellmenge: 3000
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IGLD65R110D2AUMA1 Infineon-IGLD65R110D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a204bfd623f
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.5 EUR
10+4.96 EUR
100+3.53 EUR
500+3.31 EUR
Mindestbestellmenge: 3
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CY9BF404RAPMC-G-UNE2 download
CY9BF404RAPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
auf Bestellung 840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.89 EUR
10+8.45 EUR
25+7.83 EUR
84+7.35 EUR
Mindestbestellmenge: 2
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S29GL128P90FAIR12 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FAIR12
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+8.83 EUR
Mindestbestellmenge: 400
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S29GL128P90FAIR12 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90FAIR12
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.74 EUR
10+10.42 EUR
25+9.93 EUR
50+9.58 EUR
100+9.24 EUR
Mindestbestellmenge: 2
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KITXMC7200MC1TOBO1 Infineon-KIT_XMC7200_MC1_product_brief-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192e53ce9337b6a
KITXMC7200MC1TOBO1
Hersteller: Infineon Technologies
Description: KITXMC7200MC1TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XMC7200
Primary Attributes: Isolated
Embedded: Yes, MCU
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+877.03 EUR
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KITXMC72EVK Infineon-KIT_XMC72_EVK_XMC7200-evaluation-kit-quick-start-guide-GettingStarted-v01_00-EN.pdf?fileId=8ac78c8c8412f8d301842e60df937b6f
KITXMC72EVK
Hersteller: Infineon Technologies
Description: EVALUATION BOARD WHICH CARRIES A
Packaging: Bulk
Mounting Type: Fixed
Type: MCU
Contents: Board(s), Cable(s), Power Supply, Accessories
Core Processor: ARM® Cortex®-M0, Cortex®-M7
Utilized IC / Part: XMC7200
Produkt ist nicht verfügbar
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XMC7241SCQ040XAAXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
XMC7241SCQ040XAAXUMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC7200-F176K8384AA Infineon-XMC-7200-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443173374425
XMC7200-F176K8384AA
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8.18MB 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 350MHz
Program Memory Size: 8.188MB (8.188M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 81x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 148
Produkt ist nicht verfügbar
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S25FL512SDSMFB010 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SDSMFB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.15 EUR
10+17.77 EUR
25+17.22 EUR
40+16.94 EUR
80+16.52 EUR
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S25FL512SAGMFVR13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFVR13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BB 659C-02V E7902 bb639c_bb659cseries.pdf
BB 659C-02V E7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 659C-02V E7908 bb639c_bb659cseries.pdf
BB 659C-02V E7908
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 664-02V E7902 bb644_bb664series.pdf
BB 664-02V E7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
Produkt ist nicht verfügbar
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BB 689-02V E7902 bb669_bb689series.pdf
BB 689-02V E7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
Produkt ist nicht verfügbar
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BB 689-02V E7908 bb669_bb689series.pdf
BB 689-02V E7908
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
Produkt ist nicht verfügbar
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SKP02N60XKSA1 fundamentals-of-power-semiconductors
SKP02N60XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
Produkt ist nicht verfügbar
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SGD02N60BUMA1 SGP_D02N60_Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4283d5e3da6
SGD02N60BUMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
auf Bestellung 25404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
317+1.43 EUR
Mindestbestellmenge: 317
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AUIRGR4045D auirgr4045d.pdf?fileId=5546d462533600a4015355ba8960152f
AUIRGR4045D
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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IRGR4045DPBF IRGR4045DPbF.pdf
IRGR4045DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO-252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-252AA (DPAK)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/75ns
Switching Energy: 56µJ (on), 122µJ (off)
Test Condition: 400V, 6A, 47Ohm, 15V
Gate Charge: 19.5 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 77 W
Produkt ist nicht verfügbar
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FF200R12KE3HOSA1 Infineon-FF200R12KE3-DS-v03_01-en_cn.pdf?fileId=db3a30433dcf2fc4013dd01c80660219
Hersteller: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Bulk
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+194.97 EUR
Mindestbestellmenge: 3
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IRS2004PBF irs2004pbf.pdf?fileId=5546d462533600a401535675b86b2782
IRS2004PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 2142 Stücke:
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Anzahl Preis
136+3.34 EUR
Mindestbestellmenge: 136
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IRS2003SPBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
260+1.75 EUR
Mindestbestellmenge: 260
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FZ1800R45HL4S7BPSA1 Infineon-FZ1800R45HL4_S7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d2610057b
FZ1800R45HL4S7BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 25V, 1800A
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 4000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 297 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4397.36 EUR
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FZ1800R17HE4B9HOSA2 Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244
FZ1800R17HE4B9HOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1787.98 EUR
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FZ1800R17HE4B9HOSA2 Infineon-FZ1800R17HE4_B9-DS-v02_02-EN.pdf?fileId=db3a30433e4143bd013e4717b1fe4244
FZ1800R17HE4B9HOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1800A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 1800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
Produkt ist nicht verfügbar
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SAX-XC878-16FFA 5V AC Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t
SAX-XC878-16FFA 5V AC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAX-XC878CM-13FFA 5V AC Infineon-XC87X-DS-v01_05-en.pdf?folderId=db3a304412b407950112b40c497b0af6&fileId=db3a30432239cccd01231293d56908b1&ack=t
SAX-XC878CM-13FFA 5V AC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 52KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 52KB (52K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC878CM-16FFI 3V3 AA Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAF-XC878CM-16FFI 3V3 AA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC878CM-16FFI 5V AA Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAF-XC878CM-16FFI 5V AA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAX-XC878C-16FFA 5V AA Infineon-XC87X-DS-v01_05-en.pdf?fileId=db3a30432239cccd01231293d56908b1&ack=t
SAX-XC878C-16FFA 5V AA
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 27MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 3.25K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFP2907 IRSDS11759-1.pdf?t.download=true&u=5oefqw
AUIRFP2907
Hersteller: Infineon Technologies
Description: AUIRFP2907 - 75V-100V N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+8.96 EUR
Mindestbestellmenge: 50
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IDD03SG60CXTMA1 Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53
IDD03SG60CXTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
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IFX7805ABTCATMA1 IFX7805.pdf
IFX7805ABTCATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 1A PG-TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 6 mA
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
644+0.71 EUR
Mindestbestellmenge: 644
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TLI5570RE35E1E0001XTSA1 Infineon-TLI5570-RE35E1-E0001-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0193e37b1755776b
TLI5570RE35E1E0001XTSA1
Hersteller: Infineon Technologies
Description: TLI5570RE35E1E0001XTSA1
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Polarization: Bidirectional
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: DC ~ 1.1MHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Sensor Type: Current Switch
Linearity: ±1%
For Measuring: AC/DC
Current - Supply (Max): 1.5mA
Supplier Device Package: PG-SOT23-6-4
Number of Channels: 1
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TLI5570RE35E1E0001XTSA1 Infineon-TLI5570-RE35E1-E0001-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0193e37b1755776b
TLI5570RE35E1E0001XTSA1
Hersteller: Infineon Technologies
Description: TLI5570RE35E1E0001XTSA1
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Polarization: Bidirectional
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: DC ~ 1.1MHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Sensor Type: Current Switch
Linearity: ±1%
For Measuring: AC/DC
Current - Supply (Max): 1.5mA
Supplier Device Package: PG-SOT23-6-4
Number of Channels: 1
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IRFSL7787PBF irfs7787pbf.pdf?fileId=5546d462533600a40153563ad73d21eb
IRFSL7787PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 76A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 46A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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IRFSL7730PBF irfs7730pbf.pdf?fileId=5546d462533600a40153563aad5921dc
IRFSL7730PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 407 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13660 pF @ 25 V
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IRFSL7734PBF irfs7734pbf.pdf?fileId=5546d462533600a40153563abda921e2
IRFSL7734PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 183A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 183A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 25 V
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IPB70N12S3L12ATMA1 IPx70N12S3L-12.pdf
IPB70N12S3L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
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IAUMN10S5N017GAUMA1 Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a
IAUMN10S5N017GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
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S29GL256S10DHSS10
S29GL256S10DHSS10
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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S29GL256S10DHSS20
S29GL256S10DHSS20
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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S29GL256S10DHSS60 PdfFile_133368.pdf
S29GL256S10DHSS60
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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S29GL256S10DHSS53
S29GL256S10DHSS53
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY91F594BHSPMC-GSE1
CY91F594BHSPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 872K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F592BSPMC-GSE1
CY91F592BSPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
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CY91F592BHSPMC-GSE1
CY91F592BHSPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F594BSPMC-GSE1
CY91F594BSPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 872K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
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MB91F467DAPFVS-GS-N2K5E2
MB91F467DAPFVS-GS-N2K5E2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLASH 208QFP
Packaging: Tray
Package / Case: 208-BQFP
Mounting Type: Surface Mount
Speed: 96MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 72K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 24x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 208-QFP (28x28)
Number of I/O: 170
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F592BHPMC-GSK5E1
MB91F592BHPMC-GSK5E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F592BHPMC-GSK5E2
MB91F592BHPMC-GSK5E2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB91F592BHSPMC-GS-ALK5E1
MB91F592BHSPMC-GS-ALK5E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 576KB FLASH 208LQFP
Packaging: Tray
Package / Case: 208-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 848K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 32x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-LQFP (28x28)
Number of I/O: 156
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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