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AUIRFP4004 AUIRFP4004 Infineon Technologies auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450 Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IR21814STRPBF IR21814STRPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 774 Stücke:
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5+3.80 EUR
10+2.83 EUR
25+2.59 EUR
100+2.32 EUR
250+2.19 EUR
500+2.11 EUR
Mindestbestellmenge: 5
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IMZA75R090M1HXKSA1 IMZA75R090M1HXKSA1 Infineon Technologies Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
auf Bestellung 218 Stücke:
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2+12.58 EUR
10+9.72 EUR
30+8.88 EUR
120+8.14 EUR
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IMT40R025M2HXTMA1 IMT40R025M2HXTMA1 Infineon Technologies Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
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IMT40R025M2HXTMA1 IMT40R025M2HXTMA1 Infineon Technologies Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
auf Bestellung 1988 Stücke:
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2+15.10 EUR
10+11.74 EUR
25+10.90 EUR
100+9.97 EUR
250+9.53 EUR
500+9.27 EUR
1000+9.05 EUR
Mindestbestellmenge: 2
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IMZA75R060M1HXKSA1 IMZA75R060M1HXKSA1 Infineon Technologies Infineon-IMZA75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbc1100b493c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.10 EUR
10+11.73 EUR
30+10.75 EUR
120+9.87 EUR
Mindestbestellmenge: 2
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IMZA75R040M1HXKSA1 IMZA75R040M1HXKSA1 Infineon Technologies Infineon-IMZA75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6f5b54e0f1a Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
auf Bestellung 235 Stücke:
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1+18.78 EUR
10+14.70 EUR
30+13.51 EUR
120+12.45 EUR
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IMBG40R011M2HXTMA1 IMBG40R011M2HXTMA1 Infineon Technologies Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
Produkt ist nicht verfügbar
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IMBG40R011M2HXTMA1 IMBG40R011M2HXTMA1 Infineon Technologies Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.27 EUR
10+19.03 EUR
100+17.69 EUR
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IMZA75R020M1HXKSA1 IMZA75R020M1HXKSA1 Infineon Technologies Infineon-IMZA75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6da53810eef Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
auf Bestellung 237 Stücke:
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1+32.91 EUR
10+26.24 EUR
30+24.29 EUR
120+22.55 EUR
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IMZA75R008M1HXKSA1 IMZA75R008M1HXKSA1 Infineon Technologies Infineon-IMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c95e1e0eb6 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
1+75.13 EUR
10+61.47 EUR
30+57.48 EUR
120+53.91 EUR
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EVALXDP710V2TOBO1 EVALXDP710V2TOBO1 Infineon Technologies Infineon-Evaluation_board_XDP710_2307_PL88_2308_013018-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a3c31c9195aa1 Description: EVAL BOARD FOR XDP710
Packaging: Bulk
Function: PMBus
Type: Interface
Contents: Board(s)
Utilized IC / Part: XDP710
Embedded: No
auf Bestellung 2 Stücke:
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1+539.23 EUR
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ISCH42N04LM7ATMA1 ISCH42N04LM7ATMA1 Infineon Technologies Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566 Description: ISCH42N04LM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Produkt ist nicht verfügbar
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ISCH42N04LM7ATMA1 ISCH42N04LM7ATMA1 Infineon Technologies Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566 Description: ISCH42N04LM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Produkt ist nicht verfügbar
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F3L500R12W3H7H20BPSA1 F3L500R12W3H7H20BPSA1 Infineon Technologies Description: F3L500R12W3H7H20BPSA1
Packaging: Tray
Produkt ist nicht verfügbar
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FP150R07N3E4PB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
auf Bestellung 45 Stücke:
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2+265.30 EUR
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FP150R07N3E4PB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
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FP150R07N3E4BOSA1 Infineon Technologies Infineon-FP150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043324cae8c013262b42be93951 Description: LOW POWER ECONO
Packaging: Bulk
auf Bestellung 17 Stücke:
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2+256.00 EUR
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S70KS1281DPBHI020 S70KS1281DPBHI020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70KS1281DPBHI023 S70KS1281DPBHI023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C20446-24LQXI CY8C20446-24LQXI Infineon Technologies download Description: IC CAPSENSE AP 16K 2048B 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD020N03LF2SATMA1 IPD020N03LF2SATMA1 Infineon Technologies Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.85 EUR
Mindestbestellmenge: 2000
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IPD020N03LF2SATMA1 IPD020N03LF2SATMA1 Infineon Technologies Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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10+1.79 EUR
100+1.36 EUR
500+1.11 EUR
1000+0.97 EUR
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FF55MR12W1M1HB11BPSA1 FF55MR12W1M1HB11BPSA1 Infineon Technologies Infineon-FF55MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c3b0a3719a Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
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CY15V104QN-20LPXI CY15V104QN-20LPXI Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF750R17ME7DPB11BPSA1 FF750R17ME7DPB11BPSA1 Infineon Technologies FF750R17ME7DPB11BPSA1.pdf Description: FF750R17ME7DPB11BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
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WLC151568LDXSTXUMA1 WLC151568LDXSTXUMA1 Infineon Technologies Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
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WLC151568LDXSXQMA1 WLC151568LDXSXQMA1 Infineon Technologies Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
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IPP023N03LF2SAKSA1 IPP023N03LF2SAKSA1 Infineon Technologies Infineon-IPP023N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc55232b27 Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 1000 Stücke:
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12+1.53 EUR
100+1.20 EUR
500+0.97 EUR
1000+0.80 EUR
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CY8CLED16-48PVXI CY8CLED16-48PVXI Infineon Technologies CY8CLED16.pdf Description: IC MCU 8BIT 32KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (32kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
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IDWD40G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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AUIRFR4615TRL AUIRFR4615TRL Infineon Technologies IRSDS11820-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Qualification: AEC-Q101
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10+4.60 EUR
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500+2.67 EUR
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IPA65R095C7XKSA1 IPA65R095C7XKSA1 Infineon Technologies Infineon-IPA65R095C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be754266003b Description: MOSFET N-CH 650V 12A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 413 Stücke:
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FF900R12ME7WBPSA1 FF900R12ME7WBPSA1 Infineon Technologies FF900R12ME7WBPSA1.pdf Description: FF900R12ME7WBPSA1
Packaging: Tray
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REFCAV250KMT7INVTOBO1 REFCAV250KMT7INVTOBO1 Infineon Technologies Infineon-REF-CAV250KMT7INV-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001931abed6c028b5 Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
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SHIELDTLE9185V33TOBO1 SHIELDTLE9185V33TOBO1 Infineon Technologies Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
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SHIELDTLE9185TOBO1 SHIELDTLE9185TOBO1 Infineon Technologies Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
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TLE94112ESSHIELDTOBO1 Infineon Technologies TLE94112ESSHIELDTOBO1.pdf Description: TLE94112ES_SHIELD
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE94112EL
Platform: Arduino
Produkt ist nicht verfügbar
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IMBG65R020M2HXTMA1 IMBG65R020M2HXTMA1 Infineon Technologies Infineon-IMBG65R020M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63215ab52b6 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R020M2HXTMA1 IMBG65R020M2HXTMA1 Infineon Technologies Infineon-IMBG65R020M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63215ab52b6 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 998 Stücke:
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1+19.41 EUR
10+13.67 EUR
100+12.02 EUR
500+11.37 EUR
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IPB65R050CFD7AATMA1 IPB65R050CFD7AATMA1 Infineon Technologies Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R050CFD7AATMA1 IPB65R050CFD7AATMA1 Infineon Technologies Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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2+14.20 EUR
10+9.69 EUR
100+7.15 EUR
500+6.44 EUR
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IMBG65R015M2HXTMA1 IMBG65R015M2HXTMA1 Infineon Technologies Infineon-IMBG65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631ff3b52b3 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R015M2HXTMA1 IMBG65R015M2HXTMA1 Infineon Technologies Infineon-IMBG65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631ff3b52b3 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 943 Stücke:
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1+25.20 EUR
10+22.36 EUR
100+17.82 EUR
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IRSM636-015MBTR Infineon Technologies fundamentals-of-power-semiconductors Description: MODULES POWER DRIVERS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIGC28T65EX1SA1 SIGC28T65EX1SA1 Infineon Technologies Infineon-SIGC28T65E-DS-v02_01-EN.pdf?fileId=db3a30433b92f0e8013b9476ac4b2359 Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Produkt ist nicht verfügbar
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TLE4971A050T5E0001XUMA1 TLE4971A050T5E0001XUMA1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4971A075T5E0001XUMA1 TLE4971A075T5E0001XUMA1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4971A120T5E0001XUMA1 TLE4971A120T5E0001XUMA1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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D1461S45TXPSA1 D1461S45TXPSA1 Infineon Technologies Infineon-D1461S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb8fd4d32 Description: DIODE GEN PURP 1720A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
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ICE5QR4780BG1XUMA1 ICE5QR4780BG1XUMA1 Infineon Technologies Description: ICE5QR4780BG1XUMA1
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICE5QR4780BG1XUMA1 ICE5QR4780BG1XUMA1 Infineon Technologies Description: ICE5QR4780BG1XUMA1
Packaging: Cut Tape (CT)
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IRSM515-044PA IRSM515-044PA Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 120 Stücke:
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77+6.54 EUR
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IRSM515-044PA IRSM515-044PA Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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CY7C1370KV25-167AXCT CY7C1370KV25-167AXCT Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370D-167AXCB CY7C1370D-167AXCB Infineon Technologies download Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
7+73.63 EUR
Mindestbestellmenge: 7
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CYT4BFBDJDQ0BZSGSXQLA1 Infineon Technologies Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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SAK-TC275TC-64F200W DC SAK-TC275TC-64F200W DC Infineon Technologies Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 Infineon Technologies Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
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IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 Infineon Technologies Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4961 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.76 EUR
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AUIRFP4004 auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450
AUIRFP4004
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Qualification: AEC-Q101
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IR21814STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21814STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 774 Stücke:
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Anzahl Preis
5+3.80 EUR
10+2.83 EUR
25+2.59 EUR
100+2.32 EUR
250+2.19 EUR
500+2.11 EUR
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IMZA75R090M1HXKSA1 Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c
IMZA75R090M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
auf Bestellung 218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.58 EUR
10+9.72 EUR
30+8.88 EUR
120+8.14 EUR
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IMT40R025M2HXTMA1 Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMT40R025M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IMT40R025M2HXTMA1 Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMT40R025M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.10 EUR
10+11.74 EUR
25+10.90 EUR
100+9.97 EUR
250+9.53 EUR
500+9.27 EUR
1000+9.05 EUR
Mindestbestellmenge: 2
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IMZA75R060M1HXKSA1 Infineon-IMZA75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbc1100b493c
IMZA75R060M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.10 EUR
10+11.73 EUR
30+10.75 EUR
120+9.87 EUR
Mindestbestellmenge: 2
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IMZA75R040M1HXKSA1 Infineon-IMZA75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6f5b54e0f1a
IMZA75R040M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.78 EUR
10+14.70 EUR
30+13.51 EUR
120+12.45 EUR
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IMBG40R011M2HXTMA1 Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d
IMBG40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
Produkt ist nicht verfügbar
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IMBG40R011M2HXTMA1 Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d
IMBG40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.27 EUR
10+19.03 EUR
100+17.69 EUR
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IMZA75R020M1HXKSA1 Infineon-IMZA75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6da53810eef
IMZA75R020M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.91 EUR
10+26.24 EUR
30+24.29 EUR
120+22.55 EUR
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IMZA75R008M1HXKSA1 Infineon-IMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c95e1e0eb6
IMZA75R008M1HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.13 EUR
10+61.47 EUR
30+57.48 EUR
120+53.91 EUR
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EVALXDP710V2TOBO1 Infineon-Evaluation_board_XDP710_2307_PL88_2308_013018-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a3c31c9195aa1
EVALXDP710V2TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR XDP710
Packaging: Bulk
Function: PMBus
Type: Interface
Contents: Board(s)
Utilized IC / Part: XDP710
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+539.23 EUR
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ISCH42N04LM7ATMA1 Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566
ISCH42N04LM7ATMA1
Hersteller: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Produkt ist nicht verfügbar
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ISCH42N04LM7ATMA1 Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566
ISCH42N04LM7ATMA1
Hersteller: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Produkt ist nicht verfügbar
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F3L500R12W3H7H20BPSA1
F3L500R12W3H7H20BPSA1
Hersteller: Infineon Technologies
Description: F3L500R12W3H7H20BPSA1
Packaging: Tray
Produkt ist nicht verfügbar
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FP150R07N3E4PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+265.30 EUR
Mindestbestellmenge: 2
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FP150R07N3E4PB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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FP150R07N3E4BOSA1 Infineon-FP150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043324cae8c013262b42be93951
Hersteller: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+256.00 EUR
Mindestbestellmenge: 2
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S70KS1281DPBHI020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHI020
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70KS1281DPBHI023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C20446-24LQXI download
CY8C20446-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENSE AP 16K 2048B 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
IPD020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.85 EUR
Mindestbestellmenge: 2000
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IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
IPD020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+1.79 EUR
100+1.36 EUR
500+1.11 EUR
1000+0.97 EUR
Mindestbestellmenge: 8
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FF55MR12W1M1HB11BPSA1 Infineon-FF55MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c3b0a3719a
FF55MR12W1M1HB11BPSA1
Hersteller: Infineon Technologies
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+93.51 EUR
24+68.26 EUR
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CY15V104QN-20LPXI Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY15V104QN-20LPXI
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
Packaging: Tray
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF750R17ME7DPB11BPSA1 FF750R17ME7DPB11BPSA1.pdf
FF750R17ME7DPB11BPSA1
Hersteller: Infineon Technologies
Description: FF750R17ME7DPB11BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+450.44 EUR
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WLC151568LDXSTXUMA1 Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b
WLC151568LDXSTXUMA1
Hersteller: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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WLC151568LDXSXQMA1 Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b
WLC151568LDXSXQMA1
Hersteller: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPP023N03LF2SAKSA1 Infineon-IPP023N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc55232b27
IPP023N03LF2SAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
12+1.53 EUR
100+1.20 EUR
500+0.97 EUR
1000+0.80 EUR
Mindestbestellmenge: 10
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CY8CLED16-48PVXI CY8CLED16.pdf
CY8CLED16-48PVXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (32kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 44
DigiKey Programmable: Not Verified
auf Bestellung 147 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.20 EUR
10+22.38 EUR
30+20.67 EUR
120+19.15 EUR
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IDWD40G120C5XKSA2
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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AUIRFR4615TRL IRSDS11820-1.pdf?t.download=true&u=5oefqw
AUIRFR4615TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
10+4.60 EUR
100+3.24 EUR
500+2.67 EUR
1000+2.49 EUR
Mindestbestellmenge: 3
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IPA65R095C7XKSA1 Infineon-IPA65R095C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be754266003b
IPA65R095C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
108+4.73 EUR
Mindestbestellmenge: 108
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FF900R12ME7WBPSA1 FF900R12ME7WBPSA1.pdf
FF900R12ME7WBPSA1
Hersteller: Infineon Technologies
Description: FF900R12ME7WBPSA1
Packaging: Tray
Produkt ist nicht verfügbar
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REFCAV250KMT7INVTOBO1 Infineon-REF-CAV250KMT7INV-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001931abed6c028b5
REFCAV250KMT7INVTOBO1
Hersteller: Infineon Technologies
Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
Produkt ist nicht verfügbar
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SHIELDTLE9185V33TOBO1
SHIELDTLE9185V33TOBO1
Hersteller: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+92.68 EUR
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SHIELDTLE9185TOBO1
SHIELDTLE9185TOBO1
Hersteller: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+92.68 EUR
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TLE94112ESSHIELDTOBO1 TLE94112ESSHIELDTOBO1.pdf
Hersteller: Infineon Technologies
Description: TLE94112ES_SHIELD
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE94112EL
Platform: Arduino
Produkt ist nicht verfügbar
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IMBG65R020M2HXTMA1 Infineon-IMBG65R020M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63215ab52b6
IMBG65R020M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R020M2HXTMA1 Infineon-IMBG65R020M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd63215ab52b6
IMBG65R020M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.41 EUR
10+13.67 EUR
100+12.02 EUR
500+11.37 EUR
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IPB65R050CFD7AATMA1 Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c
IPB65R050CFD7AATMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R050CFD7AATMA1 Infineon-IPB65R050CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f31815e97c6c
IPB65R050CFD7AATMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.20 EUR
10+9.69 EUR
100+7.15 EUR
500+6.44 EUR
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IMBG65R015M2HXTMA1 Infineon-IMBG65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631ff3b52b3
IMBG65R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R015M2HXTMA1 Infineon-IMBG65R015M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd631ff3b52b3
IMBG65R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.20 EUR
10+22.36 EUR
100+17.82 EUR
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IRSM636-015MBTR fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MODULES POWER DRIVERS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIGC28T65EX1SA1 Infineon-SIGC28T65E-DS-v02_01-EN.pdf?fileId=db3a30433b92f0e8013b9476ac4b2359
SIGC28T65EX1SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Produkt ist nicht verfügbar
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TLE4971A050T5E0001XUMA1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971A050T5E0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4971A075T5E0001XUMA1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971A075T5E0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4971A120T5E0001XUMA1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971A120T5E0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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D1461S45TXPSA1 Infineon-D1461S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb8fd4d32
D1461S45TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1720A D10026K-1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
Produkt ist nicht verfügbar
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ICE5QR4780BG1XUMA1
ICE5QR4780BG1XUMA1
Hersteller: Infineon Technologies
Description: ICE5QR4780BG1XUMA1
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICE5QR4780BG1XUMA1
ICE5QR4780BG1XUMA1
Hersteller: Infineon Technologies
Description: ICE5QR4780BG1XUMA1
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IRSM515-044PA IRSM505-044_IRSM515-044_Series.pdf
IRSM515-044PA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+6.54 EUR
Mindestbestellmenge: 77
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IRSM515-044PA IRSM505-044_IRSM515-044_Series.pdf
IRSM515-044PA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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CY7C1370KV25-167AXCT download
CY7C1370KV25-167AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370D-167AXCB download
CY7C1370D-167AXCB
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+73.63 EUR
Mindestbestellmenge: 7
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CYT4BFBDJDQ0BZSGSXQLA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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SAK-TC275TC-64F200W DC Infineon-TC27xDC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953972c57046a
SAK-TC275TC-64F200W DC
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 424K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 24K x 8
Core Processor: TriCore™
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-22
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1
Hersteller: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1
Hersteller: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.83 EUR
2000+0.76 EUR
Mindestbestellmenge: 7
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