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AUIRFR2607Z AUIRFR2607Z Infineon Technologies auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a Description: MOSFET N-CH 75V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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AUIRFR2607ZTRL AUIRFR2607ZTRL Infineon Technologies AUIRFR2607Z.pdf Description: MOSFET N-CH 75V 42A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC0996NSATMA1 BSC0996NSATMA1 Infineon Technologies Infineon-BSC0996NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d26dc516003 Description: MOSFET N-CH 34V 13A TDSON-8-5
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-SNERE2 MB95F696KNPMC-G-SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F698KPMC1-G-SNE2 MB95F698KPMC1-G-SNE2 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 52LQFP
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
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MB95F698KWQN-G-SNE1 MB95F698KWQN-G-SNE1 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-QFN (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Produkt ist nicht verfügbar
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MB95F698KPMC1-G-XXX-UNE2 MB95F698KPMC1-G-XXX-UNE2 Infineon Technologies Description: IC MCU 8BIT FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY95F698KNPMC1-G-UNE2 CY95F698KNPMC1-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 60KB FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-102-SNE2 MB95F696KNPMC-G-102-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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MB95F698KNPMC-G109SNERE2 MB95F698KNPMC-G109SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 60KB FLASH 48LQFP
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C9560A-24AXIT CY8C9560A-24AXIT Infineon Technologies Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1TXTMA1 Infineon Technologies AIMCQ120R030M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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750+14.28 EUR
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1TXTMA1 Infineon Technologies AIMCQ120R030M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
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10+20.69 EUR
100+17.48 EUR
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IGC033S101XTMA1 IGC033S101XTMA1 Infineon Technologies infineon-igc033s101-datasheet-en.pdf Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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IGC033S101XTMA1 IGC033S101XTMA1 Infineon Technologies infineon-igc033s101-datasheet-en.pdf Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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3+8.44 EUR
10+5.57 EUR
100+3.93 EUR
500+3.36 EUR
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IGC037S12S1XTMA1 IGC037S12S1XTMA1 Infineon Technologies infineon-igc037s12s1-datasheet-en.pdf Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
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3+8.44 EUR
10+5.57 EUR
100+3.93 EUR
500+3.36 EUR
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IGC037S12S1XTMA1 IGC037S12S1XTMA1 Infineon Technologies infineon-igc037s12s1-datasheet-en.pdf Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
Produkt ist nicht verfügbar
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IGC033S10S1XTMA1 IGC033S10S1XTMA1 Infineon Technologies infineon-igc033s10s1-datasheet-en.pdf Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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IGC033S10S1XTMA1 IGC033S10S1XTMA1 Infineon Technologies infineon-igc033s10s1-datasheet-en.pdf Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 961 Stücke:
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100+3.93 EUR
500+3.36 EUR
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EVAL7136U100VGANCTOBO1 EVAL7136U100VGANCTOBO1 Infineon Technologies Infineon-EVAL_7136U_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7136U_gatedriver_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916f67a9bf5897 Description: EVAL BOARD 1EDN7136U IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7136U, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
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EVAL7126G100VGANCTOBO1 EVAL7126G100VGANCTOBO1 Infineon Technologies Infineon-EVAL_7126G_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7126G_gatedrive_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac80191745abf2f574c Description: EVAL BOARD 1EDN7126G IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7126G, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
Produkt ist nicht verfügbar
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REFIBC1600WGANTOBO1 REFIBC1600WGANTOBO1 Infineon Technologies Infineon-Scalable_regulated_intermediate_bus_converter_with_CoolGaN_100_V_power_transistors_REF_IBC_1600W_GAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001936594b9525f7b Description: EVAL BOARD FOR IGC033S10S1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 60V
Contents: Board(s)
Utilized IC / Part: IGC033S10S1
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 1.6kW
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IMCQ120R007M2HXTMA1 IMCQ120R007M2HXTMA1 Infineon Technologies Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243 Description: SICFET N-CH 1200V 257A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 257A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 93A, 18V
Power Dissipation (Max): 1172W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 197.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 8440 pF @ 800 V
auf Bestellung 396 Stücke:
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10+49.15 EUR
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IRF3205ZLPBF IRF3205ZLPBF Infineon Technologies irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
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CY8C4146LDAS273TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4147AZI-S453T CY8C4147AZI-S453T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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100+6.12 EUR
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TLE49421HALA1 TLE49421HALA1 Infineon Technologies TLE4942-1%2C1C.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
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MB3793-42PNF-G-JN-ER-6E1 MB3793-42PNF-G-JN-ER-6E1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS Inverted
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF9383MTRPBF IRF9383MTRPBF Infineon Technologies irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
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S25FL128SAGMFVR03 S25FL128SAGMFVR03 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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TLE4307D V38 TLE4307D V38 Infineon Technologies TLE4307.pdf Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.8V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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IMDQ75R007M2HXTMA1 IMDQ75R007M2HXTMA1 Infineon Technologies Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
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IMDQ75R007M2HXTMA1 IMDQ75R007M2HXTMA1 Infineon Technologies Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
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IPQC60T010S7XTMA1 IPQC60T010S7XTMA1 Infineon Technologies Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e Description: HIGH POWER_NEW
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22-101
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IPQC60T010S7XTMA1 IPQC60T010S7XTMA1 Infineon Technologies Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
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CY7C1370D-200BGXC CY7C1370D-200BGXC Infineon Technologies CY7C1370%2C72D.pdf Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY7C1370D-200BZC CY7C1370D-200BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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S25FL512SDSBHV210 S25FL512SDSBHV210 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S25FL512SDSBHV213 S25FL512SDSBHV213 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4973R050T5US0010XUMA1 TLE4973R050T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973R050T5US0010XUMA1 TLE4973R050T5US0010XUMA1 Infineon Technologies TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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500+6.25 EUR
1000+6.06 EUR
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TC397XX256F300SBDKXUMA2 TC397XX256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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TC397XX256F300SBDKXUMA2 TC397XX256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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CYAT847AZS88-42002 CYAT847AZS88-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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IPB175N20NM6ATMA1 Infineon Technologies Description: IPB175N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
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IPB175N20NM6ATMA1 Infineon Technologies Description: IPB175N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
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1ED3142MC12HXUMA1 1ED3142MC12HXUMA1 Infineon Technologies 1ED3120MC12HXUMA1.pdf Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
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1ED3142MC12HXUMA1 1ED3142MC12HXUMA1 Infineon Technologies 1ED3120MC12HXUMA1.pdf Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
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ICE5GR2280AGXUMA1 ICE5GR2280AGXUMA1 Infineon Technologies Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Power (Watts): 23 W
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BTS700201ESPEVALBRDTOBO1 Infineon Technologies BTS700201ESPEVALBRDTOBO1.pdf Description: BTS70020-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70020-1ESP
Embedded: No
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IMT65R015M2HXUMA1 IMT65R015M2HXUMA1 Infineon Technologies Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IMT65R015M2HXUMA1 IMT65R015M2HXUMA1 Infineon Technologies Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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IGB03N120S7ATMA1 IGB03N120S7ATMA1 Infineon Technologies Infineon08012024DSIGB03N120S7v100en.pdf Description: IGBT 1200V 9A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
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IGB03N120S7ATMA1 IGB03N120S7ATMA1 Infineon Technologies Infineon08012024DSIGB03N120S7v100en.pdf Description: IGBT 1200V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
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IGW03N120H2FKSA1 IGW03N120H2FKSA1 Infineon Technologies IGW03N120H2.pdf Description: IGBT 1200V 9.6A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
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AUIRFP1405 AUIRFP1405 Infineon Technologies IRSDS11927-1.pdf?t.download=true&u=5oefqw Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
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AUIRFP1405 AUIRFP1405 Infineon Technologies AUIRFP1405.pdf Description: MOSFET N-CH 55V 95A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
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IAUC64N08S5L075ATMA1 IAUC64N08S5L075ATMA1 Infineon Technologies Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b Description: MOSFET_(75V 120V( PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Produkt ist nicht verfügbar
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IAUC64N08S5L075ATMA1 IAUC64N08S5L075ATMA1 Infineon Technologies Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b Description: MOSFET_(75V 120V( PG-TDSON-8
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
auf Bestellung 380 Stücke:
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1ED3141MC12HXUMA1 1ED3141MC12HXUMA1 Infineon Technologies 1ED3120MC12HXUMA1.pdf Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
Produkt ist nicht verfügbar
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AUIRFR2607Z auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a
AUIRFR2607Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
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AUIRFR2607ZTRL AUIRFR2607Z.pdf
AUIRFR2607ZTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC0996NSATMA1 Infineon-BSC0996NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d26dc516003
BSC0996NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 13A TDSON-8-5
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F698KPMC1-G-SNE2 download
MB95F698KPMC1-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
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MB95F698KWQN-G-SNE1 download
MB95F698KWQN-G-SNE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-QFN (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
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MB95F698KPMC1-G-XXX-UNE2
MB95F698KPMC1-G-XXX-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
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CY95F698KNPMC1-G-UNE2
CY95F698KNPMC1-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
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MB95F696KNPMC-G-102-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-102-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
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MB95F698KNPMC-G109SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F698KNPMC-G109SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 48LQFP
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C9560A-24AXIT Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9560A-24AXIT
Hersteller: Infineon Technologies
Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1T_v1.10_en.pdf
AIMCQ120R030M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+14.28 EUR
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1T_v1.10_en.pdf
AIMCQ120R030M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
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1+29.38 EUR
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100+17.48 EUR
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IGC033S101XTMA1 infineon-igc033s101-datasheet-en.pdf
IGC033S101XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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IGC033S101XTMA1 infineon-igc033s101-datasheet-en.pdf
IGC033S101XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 2914 Stücke:
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AnzahlPrivatkunde
3+8.44 EUR
10+5.57 EUR
100+3.93 EUR
500+3.36 EUR
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IGC037S12S1XTMA1 infineon-igc037s12s1-datasheet-en.pdf
IGC037S12S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
auf Bestellung 1680 Stücke:
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AnzahlPrivatkunde
3+8.44 EUR
10+5.57 EUR
100+3.93 EUR
500+3.36 EUR
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IGC037S12S1XTMA1 infineon-igc037s12s1-datasheet-en.pdf
IGC037S12S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
Produkt ist nicht verfügbar
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IGC033S10S1XTMA1 infineon-igc033s10s1-datasheet-en.pdf
IGC033S10S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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IGC033S10S1XTMA1 infineon-igc033s10s1-datasheet-en.pdf
IGC033S10S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 961 Stücke:
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3+8.44 EUR
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500+3.36 EUR
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EVAL7136U100VGANCTOBO1 Infineon-EVAL_7136U_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7136U_gatedriver_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916f67a9bf5897
EVAL7136U100VGANCTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD 1EDN7136U IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7136U, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
auf Bestellung 20 Stücke:
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EVAL7126G100VGANCTOBO1 Infineon-EVAL_7126G_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7126G_gatedrive_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac80191745abf2f574c
EVAL7126G100VGANCTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD 1EDN7126G IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7126G, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
Produkt ist nicht verfügbar
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REFIBC1600WGANTOBO1 Infineon-Scalable_regulated_intermediate_bus_converter_with_CoolGaN_100_V_power_transistors_REF_IBC_1600W_GAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001936594b9525f7b
REFIBC1600WGANTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IGC033S10S1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 60V
Contents: Board(s)
Utilized IC / Part: IGC033S10S1
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 1.6kW
Produkt ist nicht verfügbar
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IMCQ120R007M2HXTMA1 Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243
IMCQ120R007M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 257A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 257A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 93A, 18V
Power Dissipation (Max): 1172W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 197.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 8440 pF @ 800 V
auf Bestellung 396 Stücke:
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1+61.5 EUR
10+49.15 EUR
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IRF3205ZLPBF irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C4146LDAS273TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147AZI-S453T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147AZI-S453T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
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3+9.57 EUR
10+7.31 EUR
25+6.74 EUR
100+6.12 EUR
250+5.82 EUR
500+5.64 EUR
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TLE49421HALA1 TLE4942-1%2C1C.pdf
TLE49421HALA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
129+4.19 EUR
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MB3793-42PNF-G-JN-ER-6E1 download
MB3793-42PNF-G-JN-ER-6E1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS Inverted
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF9383MTRPBF irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab
IRF9383MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
auf Bestellung 8628 Stücke:
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186+2.89 EUR
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S25FL128SAGMFVR03 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFVR03
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4307D V38 TLE4307.pdf
TLE4307D V38
Hersteller: Infineon Technologies
Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.8V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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IMDQ75R007M2HXTMA1 Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c
IMDQ75R007M2HXTMA1
Hersteller: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IMDQ75R007M2HXTMA1 Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c
IMDQ75R007M2HXTMA1
Hersteller: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+52.57 EUR
10+40.35 EUR
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IPQC60T010S7XTMA1 Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e
IPQC60T010S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22-101
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPQC60T010S7XTMA1 Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e
IPQC60T010S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.04 EUR
10+29.61 EUR
25+27.74 EUR
100+25.69 EUR
250+24.72 EUR
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CY7C1370D-200BGXC CY7C1370%2C72D.pdf
CY7C1370D-200BGXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370D-200BZC download
CY7C1370D-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 136 Stücke
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S25FL512SDSBHV210 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDSBHV210
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3380 Stücke
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S25FL512SDSBHV213 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDSBHV213
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE4973R050T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R050T5US0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+5.83 EUR
Mindestbestellmenge: 2500 Stücke
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TLE4973R050T5US0010XUMA1 TLE4973-RyyyT5-S0010_Rev3.10_11-30-23.pdf
TLE4973R050T5US0010XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.96 EUR
5+8.04 EUR
10+7.7 EUR
25+7.29 EUR
50+7.02 EUR
100+6.76 EUR
500+6.25 EUR
1000+6.06 EUR
Mindestbestellmenge: 3 Stücke
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TC397XX256F300SBDKXUMA2 Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e
TC397XX256F300SBDKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TC397XX256F300SBDKXUMA2 Infineon-TC39x_Addendum-DataSheet-v01_07-EN.pdf?fileId=5546d4626f229553016fb316c2c6746e
TC397XX256F300SBDKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+153.81 EUR
10+128.03 EUR
25+121.59 EUR
100+120.19 EUR
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CYAT847AZS88-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT847AZS88-42002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
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IPB175N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPB175N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.8 EUR
Mindestbestellmenge: 1000 Stücke
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IPB175N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPB175N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 38A, 15V
Power Dissipation (Max): 3.8W (Ta), 203W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 105µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.94 EUR
10+5.21 EUR
100+3.67 EUR
500+3.08 EUR
Mindestbestellmenge: 3 Stücke
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1ED3142MC12HXUMA1 1ED3120MC12HXUMA1.pdf
1ED3142MC12HXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.56 EUR
3000+1.52 EUR
Mindestbestellmenge: 1500 Stücke
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1ED3142MC12HXUMA1 1ED3120MC12HXUMA1.pdf
1ED3142MC12HXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-LDSO-8-1
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 14V ~ 32V
auf Bestellung 3031 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
10+2.24 EUR
25+2.03 EUR
100+1.81 EUR
250+1.7 EUR
500+1.64 EUR
Mindestbestellmenge: 7 Stücke
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ICE5GR2280AGXUMA1 Infineon-ICE5xRxxxxAG-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801607d6123c745a6
ICE5GR2280AGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 125kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Non-Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Control Features: EN, Soft Start, Sync
Power (Watts): 23 W
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
76+7.09 EUR
Mindestbestellmenge: 76 Stücke
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BTS700201ESPEVALBRDTOBO1 BTS700201ESPEVALBRDTOBO1.pdf
Hersteller: Infineon Technologies
Description: BTS70020-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70020-1ESP
Embedded: No
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+194.48 EUR
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IMT65R015M2HXUMA1 Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6
IMT65R015M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+34.31 EUR
10+24.37 EUR
100+21.35 EUR
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IMT65R015M2HXUMA1 Infineon-IMT65R015M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dfcb7ba3ba6
IMT65R015M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+17.43 EUR
Mindestbestellmenge: 2000 Stücke
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IGB03N120S7ATMA1 Infineon08012024DSIGB03N120S7v100en.pdf
IGB03N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 9A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
Produkt ist nicht verfügbar
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IGB03N120S7ATMA1 Infineon08012024DSIGB03N120S7v100en.pdf
IGB03N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO263-3-2
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 37 W
auf Bestellung 890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.58 EUR
10+2.28 EUR
100+1.55 EUR
500+1.23 EUR
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IGW03N120H2FKSA1 IGW03N120H2.pdf
IGW03N120H2FKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 9.6A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: PG-TO247-3-1
Td (on/off) @ 25°C: 9.2ns/281ns
Switching Energy: 290µJ
Test Condition: 800V, 3A, 82Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 9.6 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9.9 A
Power - Max: 62.5 W
auf Bestellung 564 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
137+3.93 EUR
Mindestbestellmenge: 137 Stücke
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AUIRFP1405 IRSDS11927-1.pdf?t.download=true&u=5oefqw
AUIRFP1405
Hersteller: Infineon Technologies
Description: AUIRFP1405 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
103+5.38 EUR
Mindestbestellmenge: 103 Stücke
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AUIRFP1405 AUIRFP1405.pdf
AUIRFP1405
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 95A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 95A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC64N08S5L075ATMA1 Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b
IAUC64N08S5L075ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Produkt ist nicht verfügbar
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IAUC64N08S5L075ATMA1 Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b
IAUC64N08S5L075ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 40 V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.53 EUR
10+2.25 EUR
100+1.51 EUR
Mindestbestellmenge: 6 Stücke
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1ED3141MC12HXUMA1 1ED3120MC12HXUMA1.pdf
1ED3141MC12HXUMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Magnetic Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 3000Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-8-66
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 300kV/µs
Propagation Delay tpLH / tpHL (Max): 50ns, 50ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 12.35V ~ 32V
Produkt ist nicht verfügbar
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