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IGLD65R055D2AUMA1 IGLD65R055D2AUMA1 Infineon Technologies Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803 Description: GANFET N-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Produkt ist nicht verfügbar
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IGLD65R055D2AUMA1 IGLD65R055D2AUMA1 Infineon Technologies Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803 Description: GANFET N-CH
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.12 EUR
10+6.82 EUR
100+5.03 EUR
Mindestbestellmenge: 2
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C2DBYY001831 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FP20R06W1E3B3BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1100 pF @ 25 V
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IMT40R045M2HXTMA1 IMT40R045M2HXTMA1 Infineon Technologies Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
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IMT40R045M2HXTMA1 IMT40R045M2HXTMA1 Infineon Technologies Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
auf Bestellung 1890 Stücke:
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2+11.3 EUR
10+7.68 EUR
100+6.19 EUR
500+5.67 EUR
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IR38060MGM09TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM10TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM12TRP Infineon Technologies Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
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IR38060MGM18TRPXUMA1 Infineon Technologies Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
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IDK05G65C5XTMA1 IDK05G65C5XTMA1 Infineon Technologies Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
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IDK05G65C5XTMA2 IDK05G65C5XTMA2 Infineon Technologies Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
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CY7C4215V-15ASXC CY7C4215V-15ASXC Infineon Technologies CY7C4xx5V_RevC.pdf Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C421-10JXC CY7C421-10JXC Infineon Technologies CY7C419%2C21%2C25%2C29%2C33.pdf Description: IC FIFO ASYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 10ns
Current - Supply (Max): 85mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C4211-15JXC CY7C4211-15JXC Infineon Technologies CY7C4xx1_RevC.pdf Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4972EVALVERBARTOBO1 TLE4972EVALVERBARTOBO1 Infineon Technologies Description: TLE4972 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.3V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4972
Embedded: No
Sensing Range: 842A
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1+1621.66 EUR
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TLE4973EVALVERBARTOBO1 TLE4973EVALVERBARTOBO1 Infineon Technologies Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
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D1821SH45TS05XOSA1 D1821SH45TS05XOSA1 Infineon Technologies Soft_Recovery_Freewheeling_Diodes-PB_v03_4-21-16.pdf Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
Produkt ist nicht verfügbar
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EVALISSI20R02HTSTOBO1 EVALISSI20R02HTSTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
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EVALISSI20R02HCSTOBO1 EVALISSI20R02HCSTOBO1 Infineon Technologies Infineon-EVAL-iSSI20R02HCS-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101903485f2631a7e Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
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EVALISSI20R11HTOBO1 EVALISSI20R11HTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R11H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
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EVALISSI20R03HTOBO1 EVALISSI20R03HTOBO1 Infineon Technologies Description: EVAL BOARD FOR ISSI20R03H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R03H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
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FF200R06KE3HOSA1 FF200R06KE3HOSA1 Infineon Technologies Infineon-FF200R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a07960d4 Description: IGBT MOD 600V 260A 680W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 164 Stücke:
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4+121.97 EUR
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BCR402W12VLEDBOARDTOBO1 BCR402W12VLEDBOARDTOBO1 Infineon Technologies Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 12V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
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BCR402W24VLEDBOARDTOBO1 BCR402W24VLEDBOARDTOBO1 Infineon Technologies Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192 Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 24V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
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1+29.37 EUR
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BDP954H6327XTSA1 BDP954H6327XTSA1 Infineon Technologies bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67 Description: TRANS PNP 100V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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PVG613PBF PVG613PBF Infineon Technologies IRSD-S-A0001055688-1.pdf?t.download=true&u=5oefqw Description: PVG613 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
auf Bestellung 5887 Stücke:
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55+9.3 EUR
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PVN013PBF PVN013PBF Infineon Technologies IRSD-S-A0001054358-1.pdf?t.download=true&u=5oefqw Description: PVN013 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
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IPB100N04S204ATMA4 IPB100N04S204ATMA4 Infineon Technologies IPx100N04S2-04.pdf Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1984 Stücke:
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184+2.52 EUR
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ISS75EP06LMAXTSA1 Infineon Technologies Description: SMALL SIGNAL MOSFETS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TDA5220XUMA1 TDA5220XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
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TDA5220XUMA1 TDA5220XUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Produkt ist nicht verfügbar
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BSB053N03LP G BSB053N03LP G Infineon Technologies BSB053N03LP_G.pdf Description: MOSFET N-CH 30V 17A/71A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Produkt ist nicht verfügbar
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PVT312PBF PVT312PBF Infineon Technologies pvt312.pdf?fileId=5546d462533600a4015356841f1c2960 Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 190 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 1777 Stücke:
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25+8.48 EUR
50+8.19 EUR
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250+7.55 EUR
500+7.29 EUR
1000+7.04 EUR
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IDK09G65C5XTMA1 IDK09G65C5XTMA1 Infineon Technologies Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59 Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
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IDK09G65C5XTMA2 IDK09G65C5XTMA2 Infineon Technologies Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59 Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
Produkt ist nicht verfügbar
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IDH05G65C5XKSA2 IDH05G65C5XKSA2 Infineon Technologies IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e Description: DIODE SIL CARB 650V 5A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
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IDK03G65C5XTMA1 IDK03G65C5XTMA1 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 9168 Stücke:
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IPDQ60R007CM8XTMA1 IPDQ60R007CM8XTMA1 Infineon Technologies Description: IPDQ60R007CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ60R007CM8XTMA1 IPDQ60R007CM8XTMA1 Infineon Technologies Description: IPDQ60R007CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
auf Bestellung 403 Stücke:
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ISC165N15NM6ATMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4971MS2GOTOBO1 TLE4971MS2GOTOBO1 Infineon Technologies Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7 Description: TLE4971_MS2GO
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4971
Embedded: No
Sensing Range: ±25A
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IPB035N10NF2SATMA1 Infineon Technologies Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Produkt ist nicht verfügbar
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IPB035N10NF2SATMA1 Infineon Technologies Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Produkt ist nicht verfügbar
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CY8C20647-24LQXI CY8C20647-24LQXI Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE 16K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 33
DigiKey Programmable: Not Verified
auf Bestellung 1475 Stücke:
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S26KL256SDABHB030 S26KL256SDABHB030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8CTMA461-48LQI CY8CTMA461-48LQI Infineon Technologies Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 5060 Stücke:
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CY8CTMA140-LQI-01T CY8CTMA140-LQI-01T Infineon Technologies CY8CTMA140.pdf Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 25000 Stücke:
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IMLT65R033M2HXTMA1 IMLT65R033M2HXTMA1 Infineon Technologies Infineon-IMLT65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a134832a48 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
auf Bestellung 1798 Stücke:
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2+16.47 EUR
10+11.4 EUR
100+9.53 EUR
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IMLT65R026M2HXTMA1 IMLT65R026M2HXTMA1 Infineon Technologies Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
auf Bestellung 1780 Stücke:
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BTG7003A1EPWDBTOBO1 BTG7003A1EPWDBTOBO1 Infineon Technologies Description: BTG7003A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7003A-1EPW
Platform: Arduino
auf Bestellung 2 Stücke:
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IGC019S06S1XTMA1 Infineon Technologies Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
Produkt ist nicht verfügbar
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IGT65R025D2ATMA1 Infineon Technologies Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307 Description: IGT65R025D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R025D2ATMA1 Infineon Technologies Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307 Description: IGT65R025D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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IRFP048NPBF IRFP048NPBF Infineon Technologies IRFP048NPbF.pdf Description: MOSFET N-CH 55V 64A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C1361KVE33-100AXE CY7C1361KVE33-100AXE Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, Standard
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
Produkt ist nicht verfügbar
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CY8C4025LQI-S413T CY8C4025LQI-S413T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
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D291S45TXPSA1 D291S45TXPSA1 Infineon Technologies Infineon-D291S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb7814d22 Description: DIODE STANDARD 4500V 445A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 445A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
Produkt ist nicht verfügbar
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CY7C63723-SC CY7C63723-SC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K LS USB/PS-2 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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CY7C63723-PXC CY7C63723-PXC Infineon Technologies CY7C63722%2C23%2C43.pdf Description: IC MCU 8K USB/PS2 LS 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGLD65R055D2AUMA1 Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803
IGLD65R055D2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
Produkt ist nicht verfügbar
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IGLD65R055D2AUMA1 Infineon-IGLD65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a0cb8855803
IGLD65R055D2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-LSON-8-1
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.12 EUR
10+6.82 EUR
100+5.03 EUR
Mindestbestellmenge: 2
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C2DBYY001831
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FP20R06W1E3B3BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY1B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 94 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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IMT40R045M2HXTMA1 Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57
IMT40R045M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
Produkt ist nicht verfügbar
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IMT40R045M2HXTMA1 Infineon-IMT40R045M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c55f844d57
IMT40R045M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 8.9A, 18V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.2mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 200 V
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.3 EUR
10+7.68 EUR
100+6.19 EUR
500+5.67 EUR
Mindestbestellmenge: 2
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IR38060MGM09TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Hersteller: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR38060MGM10TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Hersteller: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR38060MGM12TRP Infineon-IR38060M-DS-v03_84-EN.pdf?fileId=5546d4625c167129015c3291ea9a4cee
Hersteller: Infineon Technologies
Description: IC REG DC-DC 35IQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR38060MGM18TRPXUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 26PQFN
Packaging: Tape & Reel (TR)
Package / Case: 26-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 1.5MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: 26-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 14V
Voltage - Input (Min): 1.2V
Voltage - Output (Min/Fixed): 0.5V
Produkt ist nicht verfügbar
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IDK05G65C5XTMA1 Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e
IDK05G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+2.13 EUR
Mindestbestellmenge: 229
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IDK05G65C5XTMA2 Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e
IDK05G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
Produkt ist nicht verfügbar
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CY7C4215V-15ASXC CY7C4xx5V_RevC.pdf
CY7C4215V-15ASXC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 512X18 11NS 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (512 x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C421-10JXC CY7C419%2C21%2C25%2C29%2C33.pdf
CY7C421-10JXC
Hersteller: Infineon Technologies
Description: IC FIFO ASYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Asynchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 50MHz
Access Time: 10ns
Current - Supply (Max): 85mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C4211-15JXC CY7C4xx1_RevC.pdf
CY7C4211-15JXC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-PLCC (11.43x13.97)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4972EVALVERBARTOBO1
TLE4972EVALVERBARTOBO1
Hersteller: Infineon Technologies
Description: TLE4972 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.3V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4972
Embedded: No
Sensing Range: 842A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1621.66 EUR
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TLE4973EVALVERBARTOBO1
TLE4973EVALVERBARTOBO1
Hersteller: Infineon Technologies
Description: TLE4973 EVAL VER BAR
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4973
Embedded: No
Sensing Range: 920A
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1621.66 EUR
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D1821SH45TS05XOSA1 Soft_Recovery_Freewheeling_Diodes-PB_v03_4-21-16.pdf
D1821SH45TS05XOSA1
Hersteller: Infineon Technologies
Description: DIODE STD 4500V 1710A BGD10026K1
Packaging: Bulk
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1710A
Supplier Device Package: BG-D10026K-1
Voltage - DC Reverse (Vr) (Max): 4500 V
Produkt ist nicht verfügbar
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EVALISSI20R02HTSTOBO1
EVALISSI20R02HTSTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+298.55 EUR
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EVALISSI20R02HCSTOBO1 Infineon-EVAL-iSSI20R02HCS-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d101903485f2631a7e
EVALISSI20R02HCSTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R02H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R02H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+298.55 EUR
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EVALISSI20R11HTOBO1
EVALISSI20R11HTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R11H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R11H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+301.17 EUR
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EVALISSI20R03HTOBO1
EVALISSI20R03HTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISSI20R03H
Packaging: Box
Function: Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: iSSI20R03H
Primary Attributes: 2.5V ~ 3.5V Input Voltage
Embedded: No
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+301.17 EUR
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FF200R06KE3HOSA1 Infineon-FF200R06KE3-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b434a07960d4
FF200R06KE3HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 260A 680W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 5 mA
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+121.97 EUR
Mindestbestellmenge: 4
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BCR402W12VLEDBOARDTOBO1 Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402W12VLEDBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 12V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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BCR402W24VLEDBOARDTOBO1 Infineon-BCR402W-LED-Driver-Rev2.0.pdf?folderId=db3a30431400ef68011407a9cfc70181&fileId=db3a30431400ef68011407c5054c0192
BCR402W24VLEDBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR BCR402W
Packaging: Box
Voltage - Input: 24V
Contents: Board(s)
Current - Output / Channel: 20mA
Utilized IC / Part: BCR402W
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.37 EUR
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BDP954H6327XTSA1 bdp948_bdp950_bdp954.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a304314dca38901156149b3e81f67
BDP954H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 100V 3A PG-SOT223-4-10
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4-10
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
Produkt ist nicht verfügbar
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PVG613PBF IRSD-S-A0001055688-1.pdf?t.download=true&u=5oefqw
PVG613PBF
Hersteller: Infineon Technologies
Description: PVG613 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 1 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 500 mOhms
auf Bestellung 5887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
55+9.3 EUR
Mindestbestellmenge: 55
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PVN013PBF IRSD-S-A0001054358-1.pdf?t.download=true&u=5oefqw
PVN013PBF
Hersteller: Infineon Technologies
Description: PVN013 - PHOTOVOLTAIC RELAY
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 61 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
61+9.3 EUR
Mindestbestellmenge: 61
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IPB100N04S204ATMA4 IPx100N04S2-04.pdf
IPB100N04S204ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
184+2.52 EUR
Mindestbestellmenge: 184
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ISS75EP06LMAXTSA1
Hersteller: Infineon Technologies
Description: SMALL SIGNAL MOSFETS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TDA5220XUMA1 fundamentals-of-power-semiconductors
TDA5220XUMA1
Hersteller: Infineon Technologies
Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Produkt ist nicht verfügbar
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TDA5220XUMA1 fundamentals-of-power-semiconductors
TDA5220XUMA1
Hersteller: Infineon Technologies
Description: RF RX ASK/FSK 810-870MHZ 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -110dBm
Mounting Type: Surface Mount
Frequency: 810MHz ~ 870MHz, 400MHz ~ 440MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 5.9mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Produkt ist nicht verfügbar
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BSB053N03LP G BSB053N03LP_G.pdf
BSB053N03LP G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A/71A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Produkt ist nicht verfügbar
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PVT312PBF pvt312.pdf?fileId=5546d462533600a4015356841f1c2960
PVT312PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 190MA 0-250V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 190 mA
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 1777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.96 EUR
10+8.88 EUR
25+8.48 EUR
50+8.19 EUR
100+7.91 EUR
250+7.55 EUR
500+7.29 EUR
1000+7.04 EUR
Mindestbestellmenge: 2
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IDK09G65C5XTMA1 Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59
IDK09G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
127+3.99 EUR
Mindestbestellmenge: 127
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IDK09G65C5XTMA2 Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59
IDK09G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
Produkt ist nicht verfügbar
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IDH05G65C5XKSA2 IDH05G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a034bd32d595e
IDH05G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Produkt ist nicht verfügbar
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IDK03G65C5XTMA1 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
auf Bestellung 9168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
359+1.42 EUR
Mindestbestellmenge: 359
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IPDQ60R007CM8XTMA1
IPDQ60R007CM8XTMA1
Hersteller: Infineon Technologies
Description: IPDQ60R007CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ60R007CM8XTMA1
IPDQ60R007CM8XTMA1
Hersteller: Infineon Technologies
Description: IPDQ60R007CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 288A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 100A, 10V
Power Dissipation (Max): 1.249kW (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 3.24mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 370 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16385 pF @ 400 V
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.09 EUR
10+32.53 EUR
100+28.45 EUR
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ISC165N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4971MS2GOTOBO1 Infineon-TLE4971T-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8779172a018799e3198002e7
TLE4971MS2GOTOBO1
Hersteller: Infineon Technologies
Description: TLE4971_MS2GO
Packaging: Bulk
Interface: Analog
Contents: Board(s)
Voltage - Supply: 3.1V ~ 3.5V
Sensor Type: Current Sensor
Utilized IC / Part: TLE4971
Embedded: No
Sensing Range: ±25A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.48 EUR
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IPB035N10NF2SATMA1 Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Produkt ist nicht verfügbar
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IPB035N10NF2SATMA1 Infineon-IPB035N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe49b5c07666
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 113µA
Supplier Device Package: PG-TO263-3-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Produkt ist nicht verfügbar
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CY8C20647-24LQXI Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20647-24LQXI
Hersteller: Infineon Technologies
Description: IC CAPSENCE 16K FLASH 48QFN
Packaging: Bulk
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 33
DigiKey Programmable: Not Verified
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.37 EUR
Mindestbestellmenge: 94
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S26KL256SDABHB030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL256SDABHB030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8CTMA461-48LQI
CY8CTMA461-48LQI
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 5060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
83+6.15 EUR
Mindestbestellmenge: 83
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CY8CTMA140-LQI-01T CY8CTMA140.pdf
CY8CTMA140-LQI-01T
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 36QFN
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
73+7.01 EUR
Mindestbestellmenge: 73
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IMLT65R033M2HXTMA1 Infineon-IMLT65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a134832a48
IMLT65R033M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1213 pF @ 400 V
auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.47 EUR
10+11.4 EUR
100+9.53 EUR
Mindestbestellmenge: 2
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IMLT65R026M2HXTMA1 Infineon-IMLT65R026M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92416ca5019294a1439e2a4b
IMLT65R026M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.83 EUR
10+13.13 EUR
100+11.35 EUR
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BTG7003A1EPWDBTOBO1
BTG7003A1EPWDBTOBO1
Hersteller: Infineon Technologies
Description: BTG7003A-1EPW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG7003A-1EPW
Platform: Arduino
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+83.23 EUR
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IGC019S06S1XTMA1
Hersteller: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
Produkt ist nicht verfügbar
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IGT65R025D2ATMA1 Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307
Hersteller: Infineon Technologies
Description: IGT65R025D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R025D2ATMA1 Infineon-IGT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57bd2f0307
Hersteller: Infineon Technologies
Description: IGT65R025D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Power Dissipation (Max): 236W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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IRFP048NPBF IRFP048NPbF.pdf
IRFP048NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 64A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 37A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C1361KVE33-100AXE
CY7C1361KVE33-100AXE
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, Standard
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 256K x 36
Produkt ist nicht verfügbar
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CY8C4025LQI-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
CY8C4025LQI-S413T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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D291S45TXPSA1 Infineon-D291S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb7814d22
D291S45TXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 4500V 445A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 445A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 4.15 V @ 1200 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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CY7C63723-SC CY7C63722%2C23%2C43.pdf
CY7C63723-SC
Hersteller: Infineon Technologies
Description: IC MCU 8K LS USB/PS-2 18-SOIC
Packaging: Tube
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-SOIC
Number of I/O: 10
DigiKey Programmable: Not Verified
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CY7C63723-PXC CY7C63722%2C23%2C43.pdf
CY7C63723-PXC
Hersteller: Infineon Technologies
Description: IC MCU 8K USB/PS2 LS 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Interface: PS/2, USB
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Controller Series: CY7C637xx
Program Memory Type: OTP (8kB)
Applications: USB Microcontroller
Core Processor: M8B
Supplier Device Package: 18-PDIP
Number of I/O: 10
DigiKey Programmable: Not Verified
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