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TLF35585QUS02XUMA2 TLF35585QUS02XUMA2 Infineon Technologies Infineon-TLF35585QUS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1850 Stücke:
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2+12.58 EUR
10+9.75 EUR
25+9.04 EUR
100+8.27 EUR
250+7.9 EUR
500+7.68 EUR
1000+7.49 EUR
Mindestbestellmenge: 2
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TLF35585QUS02XUMA2 TLF35585QUS02XUMA2 Infineon Technologies Infineon-TLF35585QUS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a Description: OPTIREG PMIC
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLF35585QVS02XUMA2 TLF35585QVS02XUMA2 Infineon Technologies Infineon-TLF35585QVS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054 Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive Systems
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PVR1300NPBF PVR1300NPBF Infineon Technologies pvr13n.pdf?fileId=5546d462533600a40153568409ad2956 description Description: SSR RELAY DPST-NO 360MA 0-100V
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: DPST-NO (2 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 360 mA
Supplier Device Package: 16-DIP
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
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XC2364B40F80LAAKXUMA1 XC2364B40F80LAAKXUMA1 Infineon Technologies Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0 Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B02LSE6327XTSA1 Infineon Technologies ESD3V3S1B.pdf Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
auf Bestellung 6990 Stücke:
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XE164FN40F80LRABKXUMA1 XE164FN40F80LRABKXUMA1 Infineon Technologies Infineon-XE164XN-DS-v01_04-en.pdf?fileId=db3a30432313ff5e01235220469362ff&ack=t Description: IC MCU 16BIT 320KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7389TR IRF7389TR Infineon Technologies irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90 Description: MOSFET N/P-CH 30V 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY7C4201V-15AC CY7C4201V-15AC Infineon Technologies CY7C4201V%2C11V%2C21V%2C31V%2C41V%2C51V_4421V.pdf Description: IC FIFO SYNC 256X9 11NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 2.25K (256 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 20mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK17TA8-RF45 STK17TA8-RF45 Infineon Technologies STK17TA8.pdf Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7316TR IRF7316TR Infineon Technologies IRF7316.pdf Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
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CY7C1481BV33-133BGXI Infineon Technologies Infineon-CY7C1481BV33_72_MBIT_(2M_X_36)_FLOW_THROUGH_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4634739d3 Description: IC SRAM 72MBIT PARALLEL 119FBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 119-FBGA (14x22)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21271PBF IRS21271PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLR7843TR IRLR7843TR Infineon Technologies IRLR7843%2C%20IRLU7843.pdf Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
Produkt ist nicht verfügbar
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IPAW60R280P7SXKSA1 IPAW60R280P7SXKSA1 Infineon Technologies infineon-ipaw60r280p7s-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IRLML2402TR IRLML2402TR Infineon Technologies IRLML2402.pdf Description: MOSFET N-CH 20V 1.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Produkt ist nicht verfügbar
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IR21363STRPBF IR21363STRPBF Infineon Technologies Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21363STRPBF IR21363STRPBF Infineon Technologies Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 643 Stücke:
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4+5.24 EUR
10+3.94 EUR
25+3.62 EUR
100+3.26 EUR
250+3.09 EUR
500+2.99 EUR
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IRGS4607DPBF IRGS4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGS4607DPBF IRGS4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGB4607DPBF IRGB4607DPBF Infineon Technologies IRGx4607DPbF.pdf Description: IGBT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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BC847CE6327HTSA1 BC847CE6327HTSA1 Infineon Technologies Infineon-Infineon-BC847SERIES_BC848SERIES_BC849SERIES_BC850SERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f54161c8f4f97 Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
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BTS54040LBAXUMA1 Infineon Technologies BTS54040-LBA.pdf Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS54040LBBXUMA1 Infineon Technologies BTS54040-LBB.pdf Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS54040LBEXUMA1 Infineon Technologies BTS54040-LBE.pdf Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
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BTS54220LBAXUMA1 Infineon Technologies Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051 Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS54220LBEXUMA1 Infineon Technologies BTS54220-LBE.pdf Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
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BTS56033LBBXUMA1 Infineon Technologies BTS56033-LBB.pdf Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY4500-EPR CY4500-EPR Infineon Technologies Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8 Description: CY4500-EPR
Packaging: Box
For Use With/Related Products: Computer Systems
Tool Type: Protocol Analyzer
auf Bestellung 93 Stücke:
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1+656.25 EUR
5+626.45 EUR
10+614.03 EUR
25+597.99 EUR
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CY7C1380D-200AXC CY7C1380D-200AXC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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CY22381FXC CY22381FXC Infineon Technologies download Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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CY22381FXC CY22381FXC Infineon Technologies download Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
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CY2309ZXC-1H CY2309ZXC-1H Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7B991V-7JXC CY7B991V-7JXC Infineon Technologies download Description: IC CLK BUFFER 8:8 80MHZ 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVTTL
Type: Buffer/Driver
Input: 3-State
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 8:8
Differential - Input:Output: Yes/No
Supplier Device Package: 32-PLCC (11.43x13.97)
Frequency - Max: 80 MHz
Produkt ist nicht verfügbar
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CY62256VLL-70SNXC CY62256VLL-70SNXC Infineon Technologies CY62256V_RevF.pdf Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1021CV33-10ZXC CY7C1021CV33-10ZXC Infineon Technologies CY7C1021CV33%20RevI.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1021CV33-15ZXC CY7C1021CV33-15ZXC Infineon Technologies CY7C1021CV33%20RevI.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Infineon Technologies Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301 Description: IGOT65R045D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R045D2AUMA1 IGOT65R045D2AUMA1 Infineon Technologies Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301 Description: IGOT65R045D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R025D2AUMA1 IGLT65R025D2AUMA1 Infineon Technologies Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275 Description: IGLT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IGLT65R025D2AUMA1 IGLT65R025D2AUMA1 Infineon Technologies Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275 Description: IGLT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IGOT65R025D2AUMA1 IGOT65R025D2AUMA1 Infineon Technologies Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb Description: IGOT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R025D2AUMA1 IGOT65R025D2AUMA1 Infineon Technologies Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb Description: IGOT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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S6E1C12C0AGV20000 S6E1C12C0AGV20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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100+3.5 EUR
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DEMOFX3LVDSCAM01TOBO1 DEMOFX3LVDSCAM01TOBO1 Infineon Technologies Infineon-DEMO_FX3_LVDS_CAM01_EZ-USB_FX3_BT-UserManual-v03_00-EN.pdf?fileId=8ac78c8c8b6555fe018c1531687808ca Description: DEMOFX3LVDSCAM01TOBO1
Packaging: Box
Interface: GPIO, I2C, I2S, SPI, UART, USB
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Image Sensor
Utilized IC / Part: CYUSB3014
Embedded: No
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KITLGPWRBOM007TOBO1 KITLGPWRBOM007TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 200V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
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KITTVSDIODE7TOBO1 KITTVSDIODE7TOBO1 Infineon Technologies Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
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ISC018N08NM6ATMA1 ISC018N08NM6ATMA1 Infineon Technologies Infineon-ISC018N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9382112e16 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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T460N22TOFXPSA1 T460N22TOFXPSA1 Infineon Technologies Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
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T460N24TOFXPSA1 T460N24TOFXPSA1 Infineon Technologies Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
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XMC1100T016X0200ABXUMA1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDK02G65C5XTMA2 IDK02G65C5XTMA2 Infineon Technologies Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
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IDK02G65C5XTMA2 IDK02G65C5XTMA2 Infineon Technologies Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
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CYBL11172-56LQXI CYBL11172-56LQXI Infineon Technologies CYBL1xx7x_RevK_3-27-17.pdf Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
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FP15R12KE3GBOSA1 FP15R12KE3GBOSA1 Infineon Technologies Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181 Description: IGBT MOD 1200V 25A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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FS75R12KT4B11BOSA1 FS75R12KT4B11BOSA1 Infineon Technologies Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130 Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
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FF400R17KE4HOSA1 FF400R17KE4HOSA1 Infineon Technologies Infineon-FF400R17KE4-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e47427741a36 Description: IGBT MODULE 1700V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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FF450R17IE4BOSA2 FF450R17IE4BOSA2 Infineon Technologies Infineon-FF450R17IE4-DS-v03_01-en_de.pdf?fileId=db3a30431ff98815012023af4c1b5a9f Description: IGBT MOD 1700V 620A 2800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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FS450R17KE4BOSA1 FS450R17KE4BOSA1 Infineon Technologies Infineon-FS450R17KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb30c0c1e4ff6 Description: IGBT MOD 1700V 600A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Produkt ist nicht verfügbar
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IRLML6302TR IRLML6302TR Infineon Technologies IRLML6302.pdf Description: MOSFET P-CH 20V 780MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Produkt ist nicht verfügbar
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TLF35585QUS02XUMA2 Infineon-TLF35585QUS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a
TLF35585QUS02XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.58 EUR
10+9.75 EUR
25+9.04 EUR
100+8.27 EUR
250+7.9 EUR
500+7.68 EUR
1000+7.49 EUR
Mindestbestellmenge: 2
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TLF35585QUS02XUMA2 Infineon-TLF35585QUS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fb9e1505a
TLF35585QUS02XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLF35585QVS02XUMA2 Infineon-TLF35585QVS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054
TLF35585QVS02XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive Systems
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PVR1300NPBF description pvr13n.pdf?fileId=5546d462533600a40153568409ad2956
PVR1300NPBF
Hersteller: Infineon Technologies
Description: SSR RELAY DPST-NO 360MA 0-100V
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm), 10 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: DPST-NO (2 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 360 mA
Supplier Device Package: 16-DIP
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 5 Ohms
Produkt ist nicht verfügbar
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XC2364B40F80LAAKXUMA1 Infineon-SAK-XC2365B-40F80LR%20AB-DataSheet-v01_05-EN.pdf?fileId=5546d4626b2d8e69016b46cda5a330d0
XC2364B40F80LAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ESD3V3S1B02LSE6327XTSA1 ESD3V3S1B.pdf
ESD3V3S1B02LSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6.8VC PGTSSLP21
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: PG-TSSLP-2-1
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
Power Line Protection: No
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4261+0.11 EUR
Mindestbestellmenge: 4261
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XE164FN40F80LRABKXUMA1 Infineon-XE164XN-DS-v01_04-en.pdf?fileId=db3a30432313ff5e01235220469362ff&ack=t
XE164FN40F80LRABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 320KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7389TR irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90
IRF7389TR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY7C4201V-15AC CY7C4201V%2C11V%2C21V%2C31V%2C41V%2C51V_4421V.pdf
CY7C4201V-15AC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 256X9 11NS 32TQFP
Packaging: Bag
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 2.25K (256 x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 20mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK17TA8-RF45 STK17TA8.pdf
STK17TA8-RF45
Hersteller: Infineon Technologies
Description: IC NVSRAM 1MBIT PARALLEL 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-SSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7316TR IRF7316.pdf
IRF7316TR
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY7C1481BV33-133BGXI Infineon-CY7C1481BV33_72_MBIT_(2M_X_36)_FLOW_THROUGH_SRAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4634739d3
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 119FBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 119-FBGA (14x22)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21271PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21271PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLR7843TR IRLR7843%2C%20IRLU7843.pdf
IRLR7843TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 161A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
Produkt ist nicht verfügbar
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IPAW60R280P7SXKSA1 infineon-ipaw60r280p7s-datasheet-en.pdf
IPAW60R280P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
327+1.39 EUR
Mindestbestellmenge: 327
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IRLML2402TR IRLML2402.pdf
IRLML2402TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 930mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 15 V
Produkt ist nicht verfügbar
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IR21363STRPBF Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5
IR21363STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21363STRPBF Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5
IR21363STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
10+3.94 EUR
25+3.62 EUR
100+3.26 EUR
250+3.09 EUR
500+2.99 EUR
Mindestbestellmenge: 4
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IRGS4607DPBF IRGx4607DPbF.pdf
IRGS4607DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
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IRGS4607DPBF IRGx4607DPbF.pdf
IRGS4607DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A 58W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
268+1.69 EUR
Mindestbestellmenge: 268
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IRGB4607DPBF IRGx4607DPbF.pdf
IRGB4607DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 11A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 27ns/120ns
Switching Energy: 140µJ (on), 62µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 9 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 58 W
Produkt ist nicht verfügbar
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BC847CE6327HTSA1 Infineon-Infineon-BC847SERIES_BC848SERIES_BC849SERIES_BC850SERIES-DS-v01_01-en-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7f2a768a017f54161c8f4f97
BC847CE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 595059 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9276+0.045 EUR
Mindestbestellmenge: 9276
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BTS54040LBAXUMA1 BTS54040-LBA.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS54040LBBXUMA1 BTS54040-LBB.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS54040LBEXUMA1 BTS54040-LBE.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS54220LBAXUMA1 Automotive_Application_Guide_2016_BR.PDF?fileId=5546d46158f23e7b0158f8cac4de0051
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS54220LBEXUMA1 BTS54220-LBE.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BTS56033LBBXUMA1 BTS56033-LBB.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH HISIDE PG-TSON-24
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY4500-EPR Infineon-CY4500_EZ-PD_Protocol_Analyzer_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efe85ab14e8
CY4500-EPR
Hersteller: Infineon Technologies
Description: CY4500-EPR
Packaging: Box
For Use With/Related Products: Computer Systems
Tool Type: Protocol Analyzer
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+656.25 EUR
5+626.45 EUR
10+614.03 EUR
25+597.99 EUR
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CY7C1380D-200AXC
CY7C1380D-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY22381FXC download
CY22381FXC
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
auf Bestellung 5 Stücke:
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CY22381FXC download
CY22381FXC
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Frequency - Max: 200MHz
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Verified
auf Bestellung 1940 Stücke:
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Anzahl Preis
1+29.41 EUR
10+23.56 EUR
97+20.63 EUR
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CY2309ZXC-1H Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309ZXC-1H
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7B991V-7JXC download
CY7B991V-7JXC
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 8:8 80MHZ 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVTTL
Type: Buffer/Driver
Input: 3-State
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.97V ~ 3.63V
Ratio - Input:Output: 8:8
Differential - Input:Output: Yes/No
Supplier Device Package: 32-PLCC (11.43x13.97)
Frequency - Max: 80 MHz
Produkt ist nicht verfügbar
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CY62256VLL-70SNXC CY62256V_RevF.pdf
CY62256VLL-70SNXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1021CV33-10ZXC CY7C1021CV33%20RevI.pdf
CY7C1021CV33-10ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1021CV33-15ZXC CY7C1021CV33%20RevI.pdf
CY7C1021CV33-15ZXC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IGOT65R045D2AUMA1 Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301
IGOT65R045D2AUMA1
Hersteller: Infineon Technologies
Description: IGOT65R045D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
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IGOT65R045D2AUMA1 Infineon-IGOT65R045D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57b4b50301
IGOT65R045D2AUMA1
Hersteller: Infineon Technologies
Description: IGOT65R045D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
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IGLT65R025D2AUMA1 Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275
IGLT65R025D2AUMA1
Hersteller: Infineon Technologies
Description: IGLT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
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IGLT65R025D2AUMA1 Infineon-IGLT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a2bda5d7275
IGLT65R025D2AUMA1
Hersteller: Infineon Technologies
Description: IGLT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R025D2AUMA1 Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb
IGOT65R025D2AUMA1
Hersteller: Infineon Technologies
Description: IGOT65R025D2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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IGOT65R025D2AUMA1 Infineon-IGOT65R025D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a57aa7202fb
IGOT65R025D2AUMA1
Hersteller: Infineon Technologies
Description: IGOT65R025D2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 6.1mA
Supplier Device Package: PG-DSO-20-91
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 400 V
Produkt ist nicht verfügbar
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S6E1C12C0AGV20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C12C0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART
Peripherals: I2S, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.6 EUR
10+4.22 EUR
25+3.88 EUR
100+3.5 EUR
250+3.32 EUR
500+3.21 EUR
1000+3.12 EUR
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DEMOFX3LVDSCAM01TOBO1 Infineon-DEMO_FX3_LVDS_CAM01_EZ-USB_FX3_BT-UserManual-v03_00-EN.pdf?fileId=8ac78c8c8b6555fe018c1531687808ca
DEMOFX3LVDSCAM01TOBO1
Hersteller: Infineon Technologies
Description: DEMOFX3LVDSCAM01TOBO1
Packaging: Box
Interface: GPIO, I2C, I2S, SPI, UART, USB
Contents: Board(s)
Voltage - Supply: 1.7V ~ 3.6V
Sensor Type: Image Sensor
Utilized IC / Part: CYUSB3014
Embedded: No
auf Bestellung 1 Stücke:
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1+746.28 EUR
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KITLGPWRBOM007TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM007TOBO1
Hersteller: Infineon Technologies
Description: EVAL POWER BOARD 200V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
auf Bestellung 5 Stücke:
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Anzahl Preis
1+115.44 EUR
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KITTVSDIODE7TOBO1
KITTVSDIODE7TOBO1
Hersteller: Infineon Technologies
Description: KIT SAMPLE TVS FOR RF/ANT PROT
Packaging: Box
Mounting Type: Surface Mount
Quantity: 112 Pieces (8 Values - Mixed Quantities)
Kit Type: ESD Protection
Voltage - Breakdown: 3.3V ~ 70V
Produkt ist nicht verfügbar
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ISC018N08NM6ATMA1 Infineon-ISC018N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9382112e16
ISC018N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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T460N22TOFXPSA1 Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d
T460N22TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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T460N24TOFXPSA1 Infineon-T460N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffc158c25c0d
T460N24TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.6KV 1000A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 460 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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XMC1100T016X0200ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDK02G65C5XTMA2 Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd
IDK02G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
Produkt ist nicht verfügbar
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IDK02G65C5XTMA2 Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd
IDK02G65C5XTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
Produkt ist nicht verfügbar
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CYBL11172-56LQXI CYBL1xx7x_RevK_3-27-17.pdf
CYBL11172-56LQXI
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.56 EUR
10+8.14 EUR
25+7.53 EUR
100+6.87 EUR
Mindestbestellmenge: 2
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FP15R12KE3GBOSA1 Infineon-FP15R12KE3G-DS-v03_02-en_de.pdf?fileId=db3a304412b407950112b430a8c95181
FP15R12KE3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A 105W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
auf Bestellung 3 Stücke:
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Anzahl Preis
1+95.3 EUR
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FS75R12KT4B11BOSA1 Infineon-FS75R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431a47d73d011a49691bbc0130
FS75R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A 385W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 385 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+139.7 EUR
Mindestbestellmenge: 2
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FF400R17KE4HOSA1 Infineon-FF400R17KE4-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e47427741a36
FF400R17KE4HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 400A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+251.88 EUR
Mindestbestellmenge: 2
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FF450R17IE4BOSA2 Infineon-FF450R17IE4-DS-v03_01-en_de.pdf?fileId=db3a30431ff98815012023af4c1b5a9f
FF450R17IE4BOSA2
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 620A 2800W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 620 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2800 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Produkt ist nicht verfügbar
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FS450R17KE4BOSA1 Infineon-FS450R17KE4-DS-v02_01-en_de.pdf?fileId=db3a30431f848401011fb30c0c1e4ff6
FS450R17KE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 2500W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Produkt ist nicht verfügbar
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IRLML6302TR IRLML6302.pdf
IRLML6302TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 780MA SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 610mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.45 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 15 V
Produkt ist nicht verfügbar
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