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IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Infineon Technologies DS_IPZA60R099CM8_2_0.pdf Description: IPZA60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
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30+4.28 EUR
60+3.88 EUR
90+3.67 EUR
150+3.44 EUR
210+3.31 EUR
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IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Infineon Technologies DS_IPZA60R099CM8_2_0.pdf Description: IPZA60R099CM8XKSA1
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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IMZA65R020M2HXKSA1 IMZA65R020M2HXKSA1 Infineon Technologies infineon-imza65r020m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
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30+13.04 EUR
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IMLT65R075M2HXTMA1 IMLT65R075M2HXTMA1 Infineon Technologies infineon-imlt65r075m2h-datasheet-en.pdf Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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EVALTLE9180D31QKTOBO1 EVALTLE9180D31QKTOBO1 Infineon Technologies EVAL_TLE9180D-31QK_Web.pdf Description: EVAL BOARD FOR TLE9180D-31QK
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
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XC2768X136F128LRAAKXUMA1 XC2768X136F128LRAAKXUMA1 Infineon Technologies Infineon-SAK-XC2768X-136F128LR+AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149eb94e4e3318c Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3713STRLPBF IRL3713STRLPBF Infineon Technologies irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
Produkt ist nicht verfügbar
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IPS65R950C6AKMA1 IPS65R950C6AKMA1 Infineon Technologies DS_IPS65R950C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e81a77f502f Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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KP253HPXTMA1 KP253HPXTMA1 Infineon Technologies KP253.pdf Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQTXUMA1 CYPAS2174A132LQXQTXUMA1 Infineon Technologies Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQXQLA1 CYPAS2174A132LQXQXQLA1 Infineon Technologies Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S26HS01GTGABHB020 S26HS01GTGABHB020 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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1+34.06 EUR
10+31.54 EUR
25+30.55 EUR
50+29.8 EUR
100+29.06 EUR
260+28.05 EUR
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IKWH75N75EH7XKSA1 Infineon Technologies Description: INDUSTRY 14
Packaging: Tube
Produkt ist nicht verfügbar
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IKZA75N75EH7XKSA1 IKZA75N75EH7XKSA1 Infineon Technologies infineon-ikza75n75eh7-datasheet-en.pdf Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/183ns
Switching Energy: 1.1mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
Produkt ist nicht verfügbar
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IR2135STRPBF IR2135STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDL8011XUMA1 1EDL8011XUMA1 Infineon Technologies Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004 Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
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2500+1.17 EUR
5000+1.14 EUR
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1EDL8011XUMA1 1EDL8011XUMA1 Infineon Technologies Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004 Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
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11+1.72 EUR
25+1.56 EUR
100+1.38 EUR
250+1.3 EUR
500+1.25 EUR
1000+1.21 EUR
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CY62147GN30-45BVXI CY62147GN30-45BVXI Infineon Technologies download Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRL3705N AUIRL3705N Infineon Technologies IRSDS11401-1.pdf?t.download=true&u=5oefqw Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
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CY8C6246BZI-D04T CY8C6246BZI-D04T Infineon Technologies infineon-cy8c62x6-cy8c62x7-psoc-62-mcu-arm-cortex--m4-datasheet-en.pdf Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6117BZI-F34T CY8C6117BZI-F34T Infineon Technologies Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97 Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY8C6137BZI-F34T CY8C6137BZI-F34T Infineon Technologies Infineon_CY8C61x6_CY8C61x7_PSoC_61_MCU_Arm_Cortex_-3082151.pdf Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6137BZI-F54T CY8C6137BZI-F54T Infineon Technologies Infineon_CY8C61x6_CY8C61x7_PSoC_61_MCU_Arm_Cortex_-3082151.pdf Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6247BZI-D34T CY8C6247BZI-D34T Infineon Technologies Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
Produkt ist nicht verfügbar
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CY8C6247BZI-D54T CY8C6247BZI-D54T Infineon Technologies infineon-cy8c62x6-cy8c62x7-psoc-62-mcu-arm-cortex--m4-datasheet-en.pdf Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C614ABZI-S2F04T CY8C614ABZI-S2F04T Infineon Technologies infineon-pasco2v01-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-datasheet&redirId=DS1019 Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
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CY8C624ABZI-S2D04T CY8C624ABZI-S2D04T Infineon Technologies PdfFile_108807.pdf Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C624ABZI-S2D14T CY8C624ABZI-S2D14T Infineon Technologies PdfFile_108807.pdf Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C614ABZI-S2F44T CY8C614ABZI-S2F44T Infineon Technologies Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C614ABZI-S2F44 CY8C614ABZI-S2F44 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPAN80R280P7XKSA1 IPAN80R280P7XKSA1 Infineon Technologies infineon-ipan80r280p7-ds-en.pdf Description: MOSFET N-CH 800V 17A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
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CYW43012C0WKWBGT CYW43012C0WKWBGT Infineon Technologies infineon-cyw43012-product-overview-productbrief-en.pdf?fileId=8ac78c8c7d0d8da4017d0f662eb353fe Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Data Rate: 78Mbps
Protocol: 802.11a/b/g/n, Bluetooth v5.0
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: UART
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100+10.21 EUR
250+9.7 EUR
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1000+9 EUR
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FZ1500R33HL3NPSA1 Infineon Technologies FZ1500R33HL3.pdf?t.download=true&u=ovmfp3 Description: FZ1500R33 - INSULATED GATE BIPOL
Packaging: Bulk
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FD300R17KE4HPSA1 FD300R17KE4HPSA1 Infineon Technologies Infineon-FD300R17KE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a4701957a5417a47ff1 Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
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IGT65R055D2ATMA1 IGT65R055D2ATMA1 Infineon Technologies Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26 Description: IGT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGT65R055D2ATMA1 IGT65R055D2ATMA1 Infineon Technologies Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26 Description: IGT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IRF630NPBFAKMA1 IRF630NPBFAKMA1 Infineon Technologies Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
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SHIELDBTS70082EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7008-2EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPZ
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SHIELDBTS70401EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7040-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPZ
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IPW65R060CM8XKSA1 IPW65R060CM8XKSA1 Infineon Technologies Infineon-IPW65R060CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9c55260d5 Description: IPW65R060CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V
Produkt ist nicht verfügbar
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TDB6HK180N16RRPB11BPSA1 TDB6HK180N16RRPB11BPSA1 Infineon Technologies Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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CYW20829B0P4TAI200XUMA1 Infineon Technologies Description: BLE INDUSTRIAL AND IOT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS100R12W2T7B11ABPSA2 FS100R12W2T7B11ABPSA2 Infineon Technologies Infineon-FS100R12W2T7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 21700 pF @ 25 V
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IMCQ120R026M2HXTMA1 IMCQ120R026M2HXTMA1 Infineon Technologies DS_IMCQ120R026M2H_v1.00_en.pdf Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
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IMCQ120R026M2HXTMA1 IMCQ120R026M2HXTMA1 Infineon Technologies DS_IMCQ120R026M2H_v1.00_en.pdf Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
auf Bestellung 448 Stücke:
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1+19.94 EUR
10+13.94 EUR
100+12.21 EUR
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ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 Infineon Technologies 448_ISC011N04NM7V.pdf Description: ISC011N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Produkt ist nicht verfügbar
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ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 Infineon Technologies 448_ISC011N04NM7V.pdf Description: ISC011N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
auf Bestellung 4823 Stücke:
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6+3.4 EUR
10+2.18 EUR
100+1.48 EUR
500+1.18 EUR
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BDP954H6327XTSA1 BDP954H6327XTSA1 Infineon Technologies Infineon-BDP948_BDP950_BDP954-DS-v01_01-en.pdf?fileId=db3a304314dca38901156149b3e81f67 Description: TRANS PNP 100V 3A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
auf Bestellung 21000 Stücke:
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IR3899AMTRPBFXUMA1 IR3899AMTRPBFXUMA1 Infineon Technologies Infineon-IR3899AMTRPBF-DataSheet-v02_30-EN.pdf?fileId=5546d46276fb756a0177072216135f1f Description: IC REG BUCK ADJ 9A 19IQFN
Packaging: Cut Tape (CT)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 3630 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+1.99 EUR
Mindestbestellmenge: 5
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IQFH39N04NM6ATMA1 IQFH39N04NM6ATMA1 Infineon Technologies Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
Produkt ist nicht verfügbar
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IQFH39N04NM6ATMA1 IQFH39N04NM6ATMA1 Infineon Technologies Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.42 EUR
10+6.7 EUR
100+4.91 EUR
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SAF-XC866-4FRA BC SAF-XC866-4FRA BC Infineon Technologies Infineon-XC866-DS-v01_02-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4198e7528a5&ack=t Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPU02N60S5BKMA1 SPU02N60S5BKMA1 Infineon Technologies SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727 Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 23717 Stücke:
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296+1.52 EUR
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IMT65R033M2HXUMA1 IMT65R033M2HXUMA1 Infineon Technologies Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R033M2HXUMA1 IMT65R033M2HXUMA1 Infineon Technologies Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
auf Bestellung 1740 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.48 EUR
10+9.94 EUR
100+8.05 EUR
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CY8C20636A-24LTXI CY8C20636A-24LTXI Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: MCU 8K FLASH 1K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SIGC28T60SEX1SA2 SIGC28T60SEX1SA2 Infineon Technologies Description: IGBT TRENCH FS 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Produkt ist nicht verfügbar
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CYPD8225-97BZXIT CYPD8225-97BZXIT Infineon Technologies Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t Description: IC USB MCU 256KB FLASH 97-VFBGA
Packaging: Cut Tape (CT)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.37 EUR
10+7.98 EUR
25+7.38 EUR
100+6.73 EUR
250+6.42 EUR
500+6.23 EUR
1000+6.07 EUR
Mindestbestellmenge: 2
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SPD02N60S5BTMA1 SPD02N60S5BTMA1 Infineon Technologies SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727 Description: MOSFET N-CH 600V 1.8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 13370 Stücke:
Lieferzeit 10-14 Tag (e)
568+0.8 EUR
Mindestbestellmenge: 568
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T7300N85X203A11XPSA1 Infineon Technologies Description: SCR MODULE HP T20235K-1
Packaging: Tray
Produkt ist nicht verfügbar
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IPZA60R099CM8XKSA1 DS_IPZA60R099CM8_2_0.pdf
IPZA60R099CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+4.28 EUR
60+3.88 EUR
90+3.67 EUR
150+3.44 EUR
210+3.31 EUR
Mindestbestellmenge: 30
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IPZA60R099CM8XKSA1 DS_IPZA60R099CM8_2_0.pdf
IPZA60R099CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.66 EUR
10+5.08 EUR
Mindestbestellmenge: 3
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IMZA65R020M2HXKSA1 infineon-imza65r020m2h-datasheet-en.pdf
IMZA65R020M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.33 EUR
30+13.04 EUR
120+11.36 EUR
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IMLT65R075M2HXTMA1 infineon-imlt65r075m2h-datasheet-en.pdf
IMLT65R075M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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EVALTLE9180D31QKTOBO1 EVAL_TLE9180D-31QK_Web.pdf
EVALTLE9180D31QKTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE9180D-31QK
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+990.04 EUR
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XC2768X136F128LRAAKXUMA1 Infineon-SAK-XC2768X-136F128LR+AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149eb94e4e3318c
XC2768X136F128LRAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3713STRLPBF irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d
IRL3713STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
Produkt ist nicht verfügbar
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IPS65R950C6AKMA1 DS_IPS65R950C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e81a77f502f
IPS65R950C6AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 488448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
568+0.8 EUR
Mindestbestellmenge: 568
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KP253HPXTMA1 KP253.pdf
KP253HPXTMA1
Hersteller: Infineon Technologies
Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQTXUMA1 Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff
CYPAS2174A132LQXQTXUMA1
Hersteller: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQXQLA1 Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff
CYPAS2174A132LQXQXQLA1
Hersteller: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S26HS01GTGABHB020 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS01GTGABHB020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.06 EUR
10+31.54 EUR
25+30.55 EUR
50+29.8 EUR
100+29.06 EUR
260+28.05 EUR
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IKWH75N75EH7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Produkt ist nicht verfügbar
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IKZA75N75EH7XKSA1 infineon-ikza75n75eh7-datasheet-en.pdf
IKZA75N75EH7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 84 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: PG-TO247-4-U02
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/183ns
Switching Energy: 1.1mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 155 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 341 W
Produkt ist nicht verfügbar
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IR2135STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDL8011XUMA1 Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004
1EDL8011XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
5000+1.14 EUR
Mindestbestellmenge: 2500
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1EDL8011XUMA1 Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004
1EDL8011XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
auf Bestellung 5075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
11+1.72 EUR
25+1.56 EUR
100+1.38 EUR
250+1.3 EUR
500+1.25 EUR
1000+1.21 EUR
Mindestbestellmenge: 8
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CY62147GN30-45BVXI download
CY62147GN30-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRL3705N IRSDS11401-1.pdf?t.download=true&u=5oefqw
AUIRL3705N
Hersteller: Infineon Technologies
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+2.58 EUR
Mindestbestellmenge: 176
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CY8C6246BZI-D04T infineon-cy8c62x6-cy8c62x7-psoc-62-mcu-arm-cortex--m4-datasheet-en.pdf
CY8C6246BZI-D04T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6117BZI-F34T Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97
CY8C6117BZI-F34T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6137BZI-F34T Infineon_CY8C61x6_CY8C61x7_PSoC_61_MCU_Arm_Cortex_-3082151.pdf
CY8C6137BZI-F34T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6137BZI-F54T Infineon_CY8C61x6_CY8C61x7_PSoC_61_MCU_Arm_Cortex_-3082151.pdf
CY8C6137BZI-F54T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6247BZI-D34T
CY8C6247BZI-D34T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
Produkt ist nicht verfügbar
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CY8C6247BZI-D54T infineon-cy8c62x6-cy8c62x7-psoc-62-mcu-arm-cortex--m4-datasheet-en.pdf
CY8C6247BZI-D54T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4/M0
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C614ABZI-S2F04T infineon-pasco2v01-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-datasheet&redirId=DS1019
CY8C614ABZI-S2F04T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C624ABZI-S2D04T PdfFile_108807.pdf
CY8C624ABZI-S2D04T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C624ABZI-S2D14T PdfFile_108807.pdf
CY8C624ABZI-S2D14T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C614ABZI-S2F44T
CY8C614ABZI-S2F44T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR ; D/A 2x7/8b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C614ABZI-S2F44 Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa
CY8C614ABZI-S2F44
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 124VFBGA
Packaging: Tray
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPAN80R280P7XKSA1 infineon-ipan80r280p7-ds-en.pdf
IPAN80R280P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 16881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
198+2.28 EUR
Mindestbestellmenge: 198
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CYW43012C0WKWBGT infineon-cyw43012-product-overview-productbrief-en.pdf?fileId=8ac78c8c7d0d8da4017d0f662eb353fe
CYW43012C0WKWBGT
Hersteller: Infineon Technologies
Description: RF TXRX MODULE BLUETOOTH SMD
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Data Rate: 78Mbps
Protocol: 802.11a/b/g/n, Bluetooth v5.0
Antenna Type: Antenna Not Included
RF Family/Standard: Bluetooth
Serial Interfaces: UART
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.46 EUR
10+11.67 EUR
25+11.06 EUR
100+10.21 EUR
250+9.7 EUR
500+9.34 EUR
1000+9 EUR
Mindestbestellmenge: 2
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FZ1500R33HL3NPSA1 FZ1500R33HL3.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: FZ1500R33 - INSULATED GATE BIPOL
Packaging: Bulk
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2340.85 EUR
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FD300R17KE4HPSA1 Infineon-FD300R17KE4-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a4701957a5417a47ff1
FD300R17KE4HPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER 62MM
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+202.44 EUR
10+177.08 EUR
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IGT65R055D2ATMA1 Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26
IGT65R055D2ATMA1
Hersteller: Infineon Technologies
Description: IGT65R055D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R055D2ATMA1 Infineon-IGT65R055D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5e99970a26
IGT65R055D2ATMA1
Hersteller: Infineon Technologies
Description: IGT65R055D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.17 EUR
10+6.85 EUR
100+5.03 EUR
Mindestbestellmenge: 2
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IRF630NPBFAKMA1
IRF630NPBFAKMA1
Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
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SHIELDBTS70082EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
Hersteller: Infineon Technologies
Description: SHIELD_BTS7008-2EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-2EPZ
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+148.72 EUR
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SHIELDBTS70401EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
Hersteller: Infineon Technologies
Description: SHIELD_BTS7040-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-1EPZ
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+148.72 EUR
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IPW65R060CM8XKSA1 Infineon-IPW65R060CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9c55260d5
IPW65R060CM8XKSA1
Hersteller: Infineon Technologies
Description: IPW65R060CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.7A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 440µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2462 pF @ 400 V
Produkt ist nicht verfügbar
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TDB6HK180N16RRPB11BPSA1 Infineon-TDB6HK180N16RR-DS-v02_00-en_cn.pdf?fileId=db3a304340f610c201410c3f12e4330c
TDB6HK180N16RRPB11BPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+149.62 EUR
10+123.62 EUR
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CYW20829B0P4TAI200XUMA1
Hersteller: Infineon Technologies
Description: BLE INDUSTRIAL AND IOT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS100R12W2T7B11ABPSA2 Infineon-FS100R12W2T7_B11-DataSheet-v01_00-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
FS100R12W2T7B11ABPSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 100A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 21700 pF @ 25 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+106.97 EUR
15+82.3 EUR
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IMCQ120R026M2HXTMA1 DS_IMCQ120R026M2H_v1.00_en.pdf
IMCQ120R026M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
Produkt ist nicht verfügbar
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IMCQ120R026M2HXTMA1 DS_IMCQ120R026M2H_v1.00_en.pdf
IMCQ120R026M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 82A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 25.4mOhm @ 27A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 800 V
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.94 EUR
10+13.94 EUR
100+12.21 EUR
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ISC011N04NM7VATMA1 448_ISC011N04NM7V.pdf
ISC011N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISC011N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Produkt ist nicht verfügbar
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ISC011N04NM7VATMA1 448_ISC011N04NM7V.pdf
ISC011N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISC011N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 256A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
auf Bestellung 4823 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.18 EUR
100+1.48 EUR
500+1.18 EUR
1000+1.14 EUR
Mindestbestellmenge: 6
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BDP954H6327XTSA1 Infineon-BDP948_BDP950_BDP954-DS-v01_01-en.pdf?fileId=db3a304314dca38901156149b3e81f67
BDP954H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 100V 3A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
730+0.62 EUR
Mindestbestellmenge: 730
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IR3899AMTRPBFXUMA1 Infineon-IR3899AMTRPBF-DataSheet-v02_30-EN.pdf?fileId=5546d46276fb756a0177072216135f1f
IR3899AMTRPBFXUMA1
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 9A 19IQFN
Packaging: Cut Tape (CT)
Package / Case: 19-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-19-900
Synchronous Rectifier: Yes
Voltage - Output (Max): 6V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 3630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+1.99 EUR
Mindestbestellmenge: 5
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IQFH39N04NM6ATMA1 Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f
IQFH39N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
Produkt ist nicht verfügbar
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IQFH39N04NM6ATMA1 Infineon-IQFH39N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f09d4297e4a4f
IQFH39N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Ta), 600A (Tc)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 20 V
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.42 EUR
10+6.7 EUR
100+4.91 EUR
Mindestbestellmenge: 2
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SAF-XC866-4FRA BC Infineon-XC866-DS-v01_02-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4198e7528a5&ack=t
SAF-XC866-4FRA BC
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 86MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 768 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPU02N60S5BKMA1 SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727
SPU02N60S5BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 23717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
296+1.52 EUR
Mindestbestellmenge: 296
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IMT65R033M2HXUMA1 Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f
IMT65R033M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R033M2HXUMA1 Infineon-IMT65R033M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e2151653c8f
IMT65R033M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 400 V
auf Bestellung 1740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.48 EUR
10+9.94 EUR
100+8.05 EUR
Mindestbestellmenge: 2
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CY8C20636A-24LTXI Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20636A-24LTXI
Hersteller: Infineon Technologies
Description: MCU 8K FLASH 1K SRAM 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SIGC28T60SEX1SA2
SIGC28T60SEX1SA2
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 50A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 50A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Produkt ist nicht verfügbar
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CYPD8225-97BZXIT Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t
CYPD8225-97BZXIT
Hersteller: Infineon Technologies
Description: IC USB MCU 256KB FLASH 97-VFBGA
Packaging: Cut Tape (CT)
Package / Case: 97-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 97-BGA (6x6)
Number of I/O: 50
auf Bestellung 1308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.37 EUR
10+7.98 EUR
25+7.38 EUR
100+6.73 EUR
250+6.42 EUR
500+6.23 EUR
1000+6.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SPD02N60S5BTMA1 SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727
SPD02N60S5BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 13370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
568+0.8 EUR
Mindestbestellmenge: 568
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T7300N85X203A11XPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE HP T20235K-1
Packaging: Tray
Produkt ist nicht verfügbar
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