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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 Infineon Technologies Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 30 Stücke:
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30+15.2 EUR
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F3L420R12W3H7H21BPSA1 F3L420R12W3H7H21BPSA1 Infineon Technologies Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7 Description: F3L420R12W3H7H21BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
auf Bestellung 7 Stücke:
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F3L420R12W4H7H11BPSA1 F3L420R12W4H7H11BPSA1 Infineon Technologies Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b Description: F3L420R12W4H7H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
auf Bestellung 17 Stücke:
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1+265.65 EUR
6+246.42 EUR
12+240.05 EUR
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IRFP2907PBFXKMA1 IRFP2907PBFXKMA1 Infineon Technologies Infineon-IRFP2907-DataSheet-v01_00-EN.pdf Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Produkt ist nicht verfügbar
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ISCH54N04NM7VATMA1 ISCH54N04NM7VATMA1 Infineon Technologies 448_ISCH54N04NM7V.pdf Description: ISCH54N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
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ISCH54N04NM7VATMA1 ISCH54N04NM7VATMA1 Infineon Technologies 448_ISCH54N04NM7V.pdf Description: ISCH54N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSTHUYA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
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CYT2BL4CXAQ0AZEGSHQLA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Produkt ist nicht verfügbar
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TLE5046MTICAKLRHALA1 TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
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7+2.58 EUR
10+2.46 EUR
25+2.31 EUR
50+2.21 EUR
100+2.12 EUR
500+1.94 EUR
1000+1.87 EUR
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TLE5046MTICAKLRHALA1 TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
auf Bestellung 12 Stücke:
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TLE5046MTICPW2100HALA1 TLE5046MTICPW2100HALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.58 EUR
10+2.46 EUR
25+2.31 EUR
50+2.21 EUR
100+2.12 EUR
500+1.94 EUR
1000+1.87 EUR
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IRF8304MTRPBF IRF8304MTRPBF Infineon Technologies irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8308MTRPBF IRF8308MTRPBF Infineon Technologies irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61 Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Produkt ist nicht verfügbar
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IRF830PBF IRF830PBF Infineon Technologies irl620.pdf Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KE4PBOSA1 FF600R12KE4PBOSA1 Infineon Technologies Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
auf Bestellung 128 Stücke:
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2+273.56 EUR
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IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 6 Stücke:
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6+74.47 EUR
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IRG8P25N120KD-EPBF IRG8P25N120KD-EPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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BSS84IXUSA1 BSS84IXUSA1 Infineon Technologies 448_BSS84I.pdf Description: BSS84IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Produkt ist nicht verfügbar
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BSS84IXUSA1 BSS84IXUSA1 Infineon Technologies 448_BSS84I.pdf Description: BSS84IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
auf Bestellung 2708 Stücke:
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48+0.37 EUR
80+0.22 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
Mindestbestellmenge: 48
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TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 21 Stücke:
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4+5.02 EUR
10+3.76 EUR
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IRF6713STRPBF IRF6713STRPBF Infineon Technologies irf6713spbf.pdf?fileId=5546d462533600a4015355ecfc5c1a7e Description: MOSFET N-CH 25V 22A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 22A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 13 V
Produkt ist nicht verfügbar
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IAUZN04S7L046ATMA1 IAUZN04S7L046ATMA1 Infineon Technologies Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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5000+0.41 EUR
Mindestbestellmenge: 5000
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IAUZN04S7L046ATMA1 IAUZN04S7L046ATMA1 Infineon Technologies Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9090 Stücke:
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11+1.72 EUR
17+1.08 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 11
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ICE5AR4770BZS1XKLA1 ICE5AR4770BZS1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5AR4770BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 26.5 W
auf Bestellung 2000 Stücke:
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8+2.41 EUR
50+1.23 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.75 EUR
2000+0.72 EUR
Mindestbestellmenge: 8
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ICE5BR4780BZ1XKLA1 ICE5BR4780BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5BR4780BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
50+1.29 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.78 EUR
2000+0.75 EUR
Mindestbestellmenge: 7
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ICE5BR3995BZ1XKLA1 ICE5BR3995BZ1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5BR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
50+1.67 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR3995BZ1XKLA1 ICE5AR3995BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5AR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
50+1.79 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.09 EUR
2000+1.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ICE5BR2280BZ1XKLA1 ICE5BR2280BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5BR2280BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 40 W
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
50+1.85 EUR
100+1.67 EUR
500+1.33 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
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IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 Infineon Technologies IAUCN08S7N024-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.3 EUR
Mindestbestellmenge: 5000
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IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 Infineon Technologies IAUCN08S7N024-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.35 EUR
10+2.82 EUR
100+2.02 EUR
500+1.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR0680BZS1XKLA1 ICE5AR0680BZS1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5AR0680BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 66 W
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.42 EUR
50+2.46 EUR
100+2.27 EUR
500+1.81 EUR
1000+1.6 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE4803S16S0000XUMA2 TLE4803S16S0000XUMA2 Infineon Technologies Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4803S16S0000XUMA2 TLE4803S16S0000XUMA2 Infineon Technologies Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 TLE4801C16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 TLE4801C16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 TLE4801S16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 TLE4801S16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Infineon Technologies DS_IPZA60R099CM8_2_0.pdf Description: IPZA60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
30+4.28 EUR
60+3.88 EUR
90+3.67 EUR
150+3.44 EUR
210+3.31 EUR
Mindestbestellmenge: 30
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IPZA60R099CM8XKSA1 IPZA60R099CM8XKSA1 Infineon Technologies DS_IPZA60R099CM8_2_0.pdf Description: IPZA60R099CM8XKSA1
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.66 EUR
10+5.08 EUR
Mindestbestellmenge: 3
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IMZA65R020M2HXKSA1 IMZA65R020M2HXKSA1 Infineon Technologies infineon-imza65r020m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.33 EUR
30+13.04 EUR
120+11.36 EUR
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IMLT65R075M2HXTMA1 IMLT65R075M2HXTMA1 Infineon Technologies infineon-imlt65r075m2h-datasheet-en.pdf Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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EVALTLE9180D31QKTOBO1 EVALTLE9180D31QKTOBO1 Infineon Technologies EVAL_TLE9180D-31QK_Web.pdf Description: EVAL BOARD FOR TLE9180D-31QK
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+990.04 EUR
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XC2768X136F128LRAAKXUMA1 XC2768X136F128LRAAKXUMA1 Infineon Technologies Infineon-SAK-XC2768X-136F128LR+AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149eb94e4e3318c Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3713STRLPBF IRL3713STRLPBF Infineon Technologies irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
Produkt ist nicht verfügbar
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IPS65R950C6AKMA1 IPS65R950C6AKMA1 Infineon Technologies DS_IPS65R950C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e81a77f502f Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 488448 Stücke:
Lieferzeit 10-14 Tag (e)
568+0.8 EUR
Mindestbestellmenge: 568
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KP253HPXTMA1 KP253HPXTMA1 Infineon Technologies KP253.pdf Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQTXUMA1 CYPAS2174A132LQXQTXUMA1 Infineon Technologies Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQXQLA1 CYPAS2174A132LQXQXQLA1 Infineon Technologies Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S26HS01GTGABHB020 S26HS01GTGABHB020 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
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10+31.54 EUR
25+30.55 EUR
50+29.8 EUR
100+29.06 EUR
260+28.05 EUR
520+27.34 EUR
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IKWH75N75EH7XKSA1 Infineon Technologies Description: INDUSTRY 14
Packaging: Tube
Produkt ist nicht verfügbar
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IKZA75N75EH7XKSA1 Infineon Technologies infineon-ikza75n75eh7-datasheet-en.pdf Description: INDUSTRY 14
Packaging: Tube
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IR2135STRPBF IR2135STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDL8011XUMA1 1EDL8011XUMA1 Infineon Technologies Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004 Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
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5000+1.14 EUR
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1EDL8011XUMA1 1EDL8011XUMA1 Infineon Technologies Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004 Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
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25+1.56 EUR
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CY62147GN30-45BVXI CY62147GN30-45BVXI Infineon Technologies download Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRL3705N AUIRL3705N Infineon Technologies IRSDS11401-1.pdf?t.download=true&u=5oefqw Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
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CY8C6246BZI-D04T CY8C6246BZI-D04T Infineon Technologies infineon-cy8c62x6-cy8c62x7-psoc-62-mcu-arm-cortex--m4-datasheet-en.pdf Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6117BZI-F34T CY8C6117BZI-F34T Infineon Technologies Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97 Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6137BZI-F34T CY8C6137BZI-F34T Infineon Technologies Infineon_CY8C61x6_CY8C61x7_PSoC_61_MCU_Arm_Cortex_-3082151.pdf Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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AIGW40N65H5XKSA1 Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c
AIGW40N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+15.2 EUR
Mindestbestellmenge: 30
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F3L420R12W3H7H21BPSA1 Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7
F3L420R12W3H7H21BPSA1
Hersteller: Infineon Technologies
Description: F3L420R12W3H7H21BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
auf Bestellung 7 Stücke:
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F3L420R12W4H7H11BPSA1 Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b
F3L420R12W4H7H11BPSA1
Hersteller: Infineon Technologies
Description: F3L420R12W4H7H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
auf Bestellung 17 Stücke:
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1+265.65 EUR
6+246.42 EUR
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IRFP2907PBFXKMA1 Infineon-IRFP2907-DataSheet-v01_00-EN.pdf
IRFP2907PBFXKMA1
Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Produkt ist nicht verfügbar
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ISCH54N04NM7VATMA1 448_ISCH54N04NM7V.pdf
ISCH54N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISCH54N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
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ISCH54N04NM7VATMA1 448_ISCH54N04NM7V.pdf
ISCH54N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISCH54N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSTHUYA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSHQLA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Produkt ist nicht verfügbar
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TLE5046MTICAKLRHALA1
TLE5046MTICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.58 EUR
10+2.46 EUR
25+2.31 EUR
50+2.21 EUR
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500+1.94 EUR
1000+1.87 EUR
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TLE5046MTICAKLRHALA1
TLE5046MTICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
auf Bestellung 12 Stücke:
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TLE5046MTICPW2100HALA1
TLE5046MTICPW2100HALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.58 EUR
10+2.46 EUR
25+2.31 EUR
50+2.21 EUR
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IRF8304MTRPBF irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d
IRF8304MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8308MTRPBF irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61
IRF8308MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Produkt ist nicht verfügbar
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IRF830PBF irl620.pdf
IRF830PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KE4PBOSA1 Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf
FF600R12KE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+273.56 EUR
Mindestbestellmenge: 2
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IPI320N20N3GAKSA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPI320N20N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+74.47 EUR
Mindestbestellmenge: 6
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IRG8P25N120KD-EPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KD-EPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84IXUSA1 448_BSS84I.pdf
BSS84IXUSA1
Hersteller: Infineon Technologies
Description: BSS84IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84IXUSA1 448_BSS84I.pdf
BSS84IXUSA1
Hersteller: Infineon Technologies
Description: BSS84IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
auf Bestellung 2708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
80+0.22 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.76 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF6713STRPBF irf6713spbf.pdf?fileId=5546d462533600a4015355ecfc5c1a7e
IRF6713STRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 22A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 22A, 10V
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 50µA
Supplier Device Package: DIRECTFET™ SQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 13 V
Produkt ist nicht verfügbar
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IAUZN04S7L046ATMA1 Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd
IAUZN04S7L046ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.41 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUZN04S7L046ATMA1 Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd
IAUZN04S7L046ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.08 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR4770BZS1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5AR4770BZS1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR4770BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 26.5 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
50+1.23 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.75 EUR
2000+0.72 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
ICE5BR4780BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR4780BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR4780BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
50+1.29 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.78 EUR
2000+0.75 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
ICE5BR3995BZ1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5BR3995BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
50+1.67 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR3995BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5AR3995BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
50+1.79 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.09 EUR
2000+1.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ICE5BR2280BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR2280BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR2280BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 40 W
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
50+1.85 EUR
100+1.67 EUR
500+1.33 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN08S7N024ATMA1 IAUCN08S7N024-Data-Sheet-10-Infineon.pdf
IAUCN08S7N024ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN08S7N024ATMA1 IAUCN08S7N024-Data-Sheet-10-Infineon.pdf
IAUCN08S7N024ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.35 EUR
10+2.82 EUR
100+2.02 EUR
500+1.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR0680BZS1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5AR0680BZS1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR0680BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 66 W
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
50+2.46 EUR
100+2.27 EUR
500+1.81 EUR
1000+1.6 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE4803S16S0000XUMA2 Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe
TLE4803S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4803S16S0000XUMA2 Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe
TLE4803S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801C16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801C16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R099CM8XKSA1 DS_IPZA60R099CM8_2_0.pdf
IPZA60R099CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+4.28 EUR
60+3.88 EUR
90+3.67 EUR
150+3.44 EUR
210+3.31 EUR
Mindestbestellmenge: 30
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IPZA60R099CM8XKSA1 DS_IPZA60R099CM8_2_0.pdf
IPZA60R099CM8XKSA1
Hersteller: Infineon Technologies
Description: IPZA60R099CM8XKSA1
Packaging: Cut Tape (CT)
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.1A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 260µA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.66 EUR
10+5.08 EUR
Mindestbestellmenge: 3
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IMZA65R020M2HXKSA1 infineon-imza65r020m2h-datasheet-en.pdf
IMZA65R020M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.33 EUR
30+13.04 EUR
120+11.36 EUR
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IMLT65R075M2HXTMA1 infineon-imlt65r075m2h-datasheet-en.pdf
IMLT65R075M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT65R075M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.7A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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EVALTLE9180D31QKTOBO1 EVAL_TLE9180D-31QK_Web.pdf
EVALTLE9180D31QKTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE9180D-31QK
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9180D-31QK
Secondary Attributes: SPI Interface(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+990.04 EUR
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XC2768X136F128LRAAKXUMA1 Infineon-SAK-XC2768X-136F128LR+AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149eb94e4e3318c
XC2768X136F128LRAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32BIT 1.06MB 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, SPI, UART/USART
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRL3713STRLPBF irl3713pbf.pdf?fileId=5546d462533600a40153565f4881253d
IRL3713STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 38A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 15 V
Produkt ist nicht verfügbar
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IPS65R950C6AKMA1 DS_IPS65R950C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433899edae01389e81a77f502f
IPS65R950C6AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 488448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
568+0.8 EUR
Mindestbestellmenge: 568
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KP253HPXTMA1 KP253.pdf
KP253HPXTMA1
Hersteller: Infineon Technologies
Description: SENSOR BAROMETRIC DSOF8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD Module
Mounting Type: Surface Mount
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQTXUMA1 Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff
CYPAS2174A132LQXQTXUMA1
Hersteller: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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CYPAS2174A132LQXQXQLA1 Infineon-CYPAS2174_EZ_PD_PAG2_PD_HIGHLY-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190c4c8f72119ff
CYPAS2174A132LQXQXQLA1
Hersteller: Infineon Technologies
Description: CHARGER_ADAPTER
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 34V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Controller, USB
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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S26HS01GTGABHB020 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HS01GTGABHB020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 5.45 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.06 EUR
10+31.54 EUR
25+30.55 EUR
50+29.8 EUR
100+29.06 EUR
260+28.05 EUR
520+27.34 EUR
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IKWH75N75EH7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Produkt ist nicht verfügbar
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IKZA75N75EH7XKSA1 infineon-ikza75n75eh7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Produkt ist nicht verfügbar
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IR2135STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1EDL8011XUMA1 Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004
1EDL8011XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
5000+1.14 EUR
Mindestbestellmenge: 2500
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1EDL8011XUMA1 Infineon-1EDL8011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801914a651c6f0004
1EDL8011XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-125V 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 125V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-92
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 1.15V
Current - Peak Output (Source, Sink): -, 1A
auf Bestellung 5075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
11+1.72 EUR
25+1.56 EUR
100+1.38 EUR
250+1.3 EUR
500+1.25 EUR
1000+1.21 EUR
Mindestbestellmenge: 8
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CY62147GN30-45BVXI download
CY62147GN30-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRL3705N IRSDS11401-1.pdf?t.download=true&u=5oefqw
AUIRL3705N
Hersteller: Infineon Technologies
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+2.58 EUR
Mindestbestellmenge: 176
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CY8C6246BZI-D04T infineon-cy8c62x6-cy8c62x7-psoc-62-mcu-arm-cortex--m4-datasheet-en.pdf
CY8C6246BZI-D04T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M0, ARM® Cortex®-M4
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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CY8C6117BZI-F34T Infineon-PSoC_6_MCU_PSoC_61_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee513576c97
CY8C6117BZI-F34T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C6137BZI-F34T Infineon_CY8C61x6_CY8C61x7_PSoC_61_MCU_Arm_Cortex_-3082151.pdf
CY8C6137BZI-F34T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 124VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 100
Produkt ist nicht verfügbar
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