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TLE4973RE35D5S0010XUMA1 TLE4973RE35D5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 2298 Stücke:
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5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
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TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 1987 Stücke:
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3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
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IRG4BC20UDSTRRP IRG4BC20UDSTRRP Infineon Technologies irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267 Description: IGBT 600V 13A 60W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1580 Stücke:
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IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
auf Bestellung 980 Stücke:
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1+17.97 EUR
10+13.47 EUR
100+12.29 EUR
500+8.79 EUR
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IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
auf Bestellung 38 Stücke:
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2+9.20 EUR
10+6.14 EUR
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TLE5046SICAKLRHALA1 TLE5046SICAKLRHALA1 Infineon Technologies Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TDB6HK95N16LOFHOSA1 TDB6HK95N16LOFHOSA1 Infineon Technologies Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33 Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 1339 Stücke:
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868+0.57 EUR
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IRF100PW219XKSA1 IRF100PW219XKSA1 Infineon Technologies Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Produkt ist nicht verfügbar
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IGI60F270A1LAUMA1 IGI60F270A1LAUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Produkt ist nicht verfügbar
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IRF3709PBF IRF3709PBF Infineon Technologies irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
auf Bestellung 2241 Stücke:
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400+1.16 EUR
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IRF3709PBF IRF3709PBF Infineon Technologies irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Produkt ist nicht verfügbar
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CG9059AM Infineon Technologies Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS01MR12A8MA2BHPSA1 FS01MR12A8MA2BHPSA1 Infineon Technologies Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
auf Bestellung 6 Stücke:
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CY9AF004BGL-GMJK7E1 CY9AF004BGL-GMJK7E1 Infineon Technologies Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG4BC30UPBF IRG4BC30UPBF Infineon Technologies irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289 description Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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FS300R12OE4PNOSA1 FS300R12OE4PNOSA1 Infineon Technologies Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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1+524.83 EUR
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AN983X-AH-T-21 AN983X-AH-T-21 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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IRF7403TR IRF7403TR Infineon Technologies irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IPP033N03LF2SAKSA1 IPP033N03LF2SAKSA1 Infineon Technologies Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 990 Stücke:
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11+1.74 EUR
13+1.45 EUR
100+1.11 EUR
500+0.88 EUR
Mindestbestellmenge: 11
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IR3843AMTRPBF IR3843AMTRPBF Infineon Technologies ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IPP80N08S2L07AKSA1 IPP80N08S2L07AKSA1 Infineon Technologies Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
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IRF200B211 IRF200B211 Infineon Technologies irf200b211.pdf?fileId=5546d462533600a4015355db4d5418d4 Description: MOSFET N-CH 200V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 6346 Stücke:
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IPB065N03LGATMA1 IPB065N03LGATMA1 Infineon Technologies IP%28B%2CP%29065N03LG.pdf Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
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KT210 KT210 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
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TLF35585QUS01XUMA2 TLF35585QUS01XUMA2 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLF35585QUS01XUMA2 TLF35585QUS01XUMA2 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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2500+7.97 EUR
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IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
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IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
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PVT322PBF PVT322PBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 12685 Stücke:
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PVT322S-TPBF PVT322S-TPBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
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PVT322S-TPBF PVT322S-TPBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 2260 Stücke:
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1+20.68 EUR
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S25FL512SAGBHVC10 S25FL512SAGBHVC10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
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ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
auf Bestellung 3052 Stücke:
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2+10.96 EUR
10+8.39 EUR
100+6.68 EUR
500+5.81 EUR
1000+5.53 EUR
2000+5.51 EUR
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S29GL512T10TFA010 S29GL512T10TFA010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL01GS11TFA010 S29GL01GS11TFA010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512N10FFA010 S29GL512N10FFA010 Infineon Technologies Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8, 32M x 16
DigiKey Programmable: Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL512S11DHB023 S29GL512S11DHB023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMZA65R010M2HXKSA1 IMZA65R010M2HXKSA1 Infineon Technologies Infineon-IMZA65R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b6dff840532 Description: IMZA65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 186 Stücke:
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1+36.75 EUR
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IGT65R035D2ATMA1 IGT65R035D2ATMA1 Infineon Technologies Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R035D2ATMA1 IGT65R035D2ATMA1 Infineon Technologies Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IPD35N10S3L26ATMA2 IPD35N10S3L26ATMA2 Infineon Technologies Infineon-IPD35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a9085629c594b Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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5+3.61 EUR
10+2.31 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.15 EUR
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NBT2000A8K0T4 KIT V1 NBT2000A8K0T4 KIT V1 Infineon Technologies Infineon-OPTIGA_Authenticate_NBT_DevKit_UserGuide-UserManual-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5f3884f85 Description: OPTIGA Authenticate NBT Develop
Packaging: Box
auf Bestellung 10 Stücke:
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1+253.79 EUR
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PVN012PBF PVN012PBF Infineon Technologies pvn012.pdf?fileId=5546d462533600a401535683f185294d Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 1706 Stücke:
Lieferzeit 10-14 Tag (e)
1+33.60 EUR
10+29.92 EUR
25+28.57 EUR
50+27.59 EUR
100+26.65 EUR
250+25.44 EUR
500+24.57 EUR
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TLE42632GSXUMA1 TLE42632GSXUMA1 Infineon Technologies Infineon-TLE4263-2GS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7e1c743f8 Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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TLE42632GMXUMA1 TLE42632GMXUMA1 Infineon Technologies Infineon-TLE4263-2GM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7d79f43f5 Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY7C63813-PXC CY7C63813-PXC Infineon Technologies download Description: IC USB PERIPHERAL CTRLR 18-DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 18-PDIP
DigiKey Programmable: Not Verified
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CY8C27143-24PXI CY8C27143-24PXI Infineon Technologies download description Description: IC MCU 8BIT 16KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3220LINBUS-RD CY3220LINBUS-RD Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1 Description: EVAL BRD FOR CY8C27143 CY8C27443
Packaging: Bulk
Function: LIN
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CY8C27143, CY8C27443
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
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CY3250-27XXX CY3250-27XXX Infineon Technologies Description: KIT ICE POD FOR CY8C27 DIP
Packaging: Bulk
Accessory Type: Non-QFN Emulation Kit
Utilized IC / Part: CY3215-DK, CY8C27143-24PXI, 27243-24PVXI, 27243-24SXI, 27443-24PXI, 27443-24PVXI, 27443-24SXI, 27543-24AXI, 27643-24PVXI
Produkt ist nicht verfügbar
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IRFZ44ZLPBF IRFZ44ZLPBF Infineon Technologies irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
50+2.24 EUR
100+2.02 EUR
500+1.63 EUR
Mindestbestellmenge: 4
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IHW20N135R3FKSA1 IHW20N135R3FKSA1 Infineon Technologies DS_IHW20N135R3.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433162923a0131897157e40e46 Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
auf Bestellung 13692 Stücke:
Lieferzeit 10-14 Tag (e)
140+3.33 EUR
Mindestbestellmenge: 140
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REF5QR2280BG124W1TOBO1 REF5QR2280BG124W1TOBO1 Infineon Technologies #!?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: REF5QR2280BG124W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 1.92A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR2280BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 24W
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+202.98 EUR
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BAV99UE6327HTSA1 BAV99UE6327HTSA1 Infineon Technologies bav99series.pdf Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 3360 Stücke:
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3360+0.13 EUR
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TLE4973RE35D5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35D5S0010XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 2298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
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TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
Mindestbestellmenge: 3
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IRG4BC20UDSTRRP irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267
IRG4BC20UDSTRRP
Hersteller: Infineon Technologies
Description: IGBT 600V 13A 60W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+14.39 EUR
Mindestbestellmenge: 1000
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AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.58 EUR
10+18.87 EUR
100+17.61 EUR
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IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.97 EUR
10+13.47 EUR
100+12.29 EUR
500+8.79 EUR
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IMBG120R181M2HXTMA1 Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc
IMBG120R181M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R181M2HXTMA1 Infineon-IMBG120R181M2H-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8d1b852e018d22004bd820dc
IMBG120R181M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.20 EUR
10+6.14 EUR
Mindestbestellmenge: 2
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TLE5046SICAKLRHALA1
TLE5046SICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TDB6HK95N16LOFHOSA1 Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33
TDB6HK95N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
868+0.57 EUR
Mindestbestellmenge: 868
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IRF100PW219XKSA1 Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44
IRF100PW219XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
Produkt ist nicht verfügbar
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IGI60F270A1LAUMA1
IGI60F270A1LAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Produkt ist nicht verfügbar
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IRF3709PBF irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f
IRF3709PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
auf Bestellung 2241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+1.16 EUR
Mindestbestellmenge: 400
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IRF3709PBF irf3709pbf.pdf?fileId=5546d462533600a4015355df8536193f
IRF3709PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2672 pF @ 16 V
Produkt ist nicht verfügbar
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CG9059AM
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS01MR12A8MA2BHPSA1
FS01MR12A8MA2BHPSA1
Hersteller: Infineon Technologies
Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3325.10 EUR
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CY9AF004BGL-GMJK7E1
CY9AF004BGL-GMJK7E1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG4BC30UPBF description irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289
IRG4BC30UPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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FS300R12OE4PNOSA1 Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be
FS300R12OE4PNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+524.83 EUR
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AN983X-AH-T-21 fundamentals-of-power-semiconductors
AN983X-AH-T-21
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF7403TR irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
IRF7403TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IPP033N03LF2SAKSA1 Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a
IPP033N03LF2SAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
13+1.45 EUR
100+1.11 EUR
500+0.88 EUR
Mindestbestellmenge: 11
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IR3843AMTRPBF ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea
IR3843AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
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IPP80N08S2L07AKSA1 Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t
IPP80N08S2L07AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+3.53 EUR
Mindestbestellmenge: 91
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IRF200B211 irf200b211.pdf?fileId=5546d462533600a4015355db4d5418d4
IRF200B211
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 6346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
468+1.07 EUR
Mindestbestellmenge: 468
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IPB065N03LGATMA1 IP%28B%2CP%29065N03LG.pdf
IPB065N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
333+0.73 EUR
Mindestbestellmenge: 333
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KT210 KT%2CKTY.pdf
KT210
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
auf Bestellung 73800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
611+0.82 EUR
Mindestbestellmenge: 611
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TLF35585QUS01XUMA2 Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLF35585QUS01XUMA2 Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tray
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+7.97 EUR
Mindestbestellmenge: 2500
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IPTG029N13NM6ATMA1 IPTG029N13NM6_Rev2.0_10-16-23.pdf
IPTG029N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+4.47 EUR
Mindestbestellmenge: 1800
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IPTG029N13NM6ATMA1 IPTG029N13NM6_Rev2.0_10-16-23.pdf
IPTG029N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.80 EUR
10+6.88 EUR
100+5.47 EUR
Mindestbestellmenge: 2
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PVT322PBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 12685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.60 EUR
10+15.67 EUR
25+14.96 EUR
50+14.45 EUR
100+13.95 EUR
250+13.32 EUR
500+12.86 EUR
1000+12.42 EUR
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PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322S-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+14.83 EUR
Mindestbestellmenge: 750
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PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322S-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.68 EUR
10+18.43 EUR
25+17.60 EUR
50+17.00 EUR
100+16.41 EUR
250+15.67 EUR
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S25FL512SAGBHVC10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGBHVC10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ISC044N15NM6ATMA1 Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018
ISC044N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018
ISC044N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
auf Bestellung 3052 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.96 EUR
10+8.39 EUR
100+6.68 EUR
500+5.81 EUR
1000+5.53 EUR
2000+5.51 EUR
Mindestbestellmenge: 2
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S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T10TFA010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL01GS11TFA010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11TFA010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512N10FFA010
S29GL512N10FFA010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8, 32M x 16
DigiKey Programmable: Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S29GL512S11DHB023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11DHB023
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMZA65R010M2HXKSA1 Infineon-IMZA65R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b6dff840532
IMZA65R010M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.75 EUR
30+30.95 EUR
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IGT65R035D2ATMA1
IGT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R035D2ATMA1
IGT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
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IPD35N10S3L26ATMA2 Infineon-IPD35N10S3L-26-DataSheet-v01_02-EN.pdf?fileId=db3a30431a5c32f2011a9085629c594b
IPD35N10S3L26ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.31 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.15 EUR
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NBT2000A8K0T4 KIT V1 Infineon-OPTIGA_Authenticate_NBT_DevKit_UserGuide-UserManual-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5f3884f85
NBT2000A8K0T4 KIT V1
Hersteller: Infineon Technologies
Description: OPTIGA Authenticate NBT Develop
Packaging: Box
auf Bestellung 10 Stücke:
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Anzahl Preis
1+253.79 EUR
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PVN012PBF pvn012.pdf?fileId=5546d462533600a401535683f185294d
PVN012PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 2.5A 0-20V
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2.5 A
Approval Agency: UL
Supplier Device Package: 6-DIP
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 100 mOhms
auf Bestellung 1706 Stücke:
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Anzahl Preis
1+33.60 EUR
10+29.92 EUR
25+28.57 EUR
50+27.59 EUR
100+26.65 EUR
250+25.44 EUR
500+24.57 EUR
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TLE42632GSXUMA1 Infineon-TLE4263-2GS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7e1c743f8
TLE42632GSXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 180MA 8DSO-62
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-62
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
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TLE42632GMXUMA1 Infineon-TLE4263-2GM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec6d7d79f43f5
TLE42632GMXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 180MA PG-DSO-14-61
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-61
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset Output, Watchdog
Grade: Automotive
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY7C63813-PXC download
CY7C63813-PXC
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 18-DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 18-PDIP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C27143-24PXI description download
CY8C27143-24PXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 8-PDIP
Number of I/O: 6
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3220LINBUS-RD Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1
CY3220LINBUS-RD
Hersteller: Infineon Technologies
Description: EVAL BRD FOR CY8C27143 CY8C27443
Packaging: Bulk
Function: LIN
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CY8C27143, CY8C27443
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
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CY3250-27XXX
CY3250-27XXX
Hersteller: Infineon Technologies
Description: KIT ICE POD FOR CY8C27 DIP
Packaging: Bulk
Accessory Type: Non-QFN Emulation Kit
Utilized IC / Part: CY3215-DK, CY8C27143-24PXI, 27243-24PVXI, 27243-24SXI, 27443-24PXI, 27443-24PVXI, 27443-24SXI, 27543-24AXI, 27643-24PVXI
Produkt ist nicht verfügbar
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IRFZ44ZLPBF irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c
IRFZ44ZLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
auf Bestellung 986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
50+2.24 EUR
100+2.02 EUR
500+1.63 EUR
Mindestbestellmenge: 4
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IHW20N135R3FKSA1 DS_IHW20N135R3.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433162923a0131897157e40e46
IHW20N135R3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1350V 40A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench
Td (on/off) @ 25°C: -/335ns
Switching Energy: 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
auf Bestellung 13692 Stücke:
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Anzahl Preis
140+3.33 EUR
Mindestbestellmenge: 140
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REF5QR2280BG124W1TOBO1 #!?fileId=8ac78c8c919c9f9d019233514f1f43d4
REF5QR2280BG124W1TOBO1
Hersteller: Infineon Technologies
Description: REF5QR2280BG124W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 1.92A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR2280BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 24W
auf Bestellung 5 Stücke:
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Anzahl Preis
1+202.98 EUR
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BAV99UE6327HTSA1 bav99series.pdf
BAV99UE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3360+0.13 EUR
Mindestbestellmenge: 3360
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