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AUIRF3205 AUIRF3205 Infineon Technologies auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
auf Bestellung 27000 Stücke:
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AUIRFU8403 AUIRFU8403 Infineon Technologies IRSDS18588-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFU7746PBF IRFU7746PBF Infineon Technologies irfr7746pbf.pdf?fileId=5546d462533600a401535635cbd72125 Description: MOSFET N-CH 75V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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BGAP3D30HE6327XUMA1 BGAP3D30HE6327XUMA1 Infineon Technologies Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
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BGAP3D30HE6327XUMA1 BGAP3D30HE6327XUMA1 Infineon Technologies Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
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10+6.59 EUR
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100+5.74 EUR
250+5.45 EUR
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1000+5.04 EUR
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TLE92623BQXXUMA2 TLE92623BQXXUMA2 Infineon Technologies Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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IR4427PBF IR4427PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IPA80R1K4CEXKSA1 IPA80R1K4CEXKSA1 Infineon Technologies Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
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IPLK80R1K4P7ATMA1 IPLK80R1K4P7ATMA1 Infineon Technologies Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223 Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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IPLK80R1K4P7ATMA1 IPLK80R1K4P7ATMA1 Infineon Technologies Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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S25FL256SAGNFE003 S25FL256SAGNFE003 Infineon Technologies Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGNFE000 S25FL256SAGNFE000 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS128SDPBHA020 S26KS128SDPBHA020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AIKQB120N75CP2AKSA1 AIKQB120N75CP2AKSA1 Infineon Technologies Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2 Description: DISCRETE SWITCHES
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C68013A-56BAXC CY7C68013A-56BAXC Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
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GAMECONTROLLERTOBO1 GAMECONTROLLERTOBO1 Infineon Technologies Infineon-XENSIV_Game_Controller_User_Manual-UserManual-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190dee4521070ee&da=t Description: GAMECONTROLLERTOBO1
Packaging: Box
Configuration: Controller
Contents: Battery Charger
Utilized IC / Part: PSoC™6 Bluetooth® LE
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CY8C6247BTID54TXUMA1 Infineon Technologies Description: IOT-PSOC6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C6247BTID54XQLA1 Infineon Technologies Description: IOT-PSOC6
Packaging: Tray
Produkt ist nicht verfügbar
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CYAT61659-56LWS41T CYAT61659-56LWS41T Infineon Technologies CYAT6165x.pdf Description: TrueTouch
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (8x8)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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TLS850D0TAV33ATMA1 TLS850D0TAV33ATMA1 Infineon Technologies Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266 Description: IC REG LINEAR 3.3V PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Enable, Reset
Grade: Automotive
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.43V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
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S6T3J300411A176A2 Infineon Technologies Infineon-AN214051_Getting_Started_with_the_Traveo_Family_S6J3400_Series-ApplicationNotes-v04_00-EN.pdf?fileId=8ac78c8c7cdc391c017d0d2c83ad6408&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio Description: TOOL KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
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FD600R17KE3B2NOSA1 FD600R17KE3B2NOSA1 Infineon Technologies Infineon-FD600R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43101dd5308 Description: IGBT MODULE 1700V 4300W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4300 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
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IAUC120N06S5N011ATMA1 IAUC120N06S5N011ATMA1 Infineon Technologies Infineon-IAUC120N06S5N011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1a9d3fd122c Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V
Qualification: AEC-Q101
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10+3.56 EUR
100+2.48 EUR
500+2.17 EUR
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AUIRG4BC30U-S AUIRG4BC30U-S Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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IDH02G65C5XKSA2 IDH02G65C5XKSA2 Infineon Technologies Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
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BC 847BF E6327 BC 847BF E6327 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BAS 70-02W E6327 BAS 70-02W E6327 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BSC159N10LSFGATMA1 BSC159N10LSFGATMA1 Infineon Technologies BSC159N10LSF+Rev2.07.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b499f85d47b36 Description: MOSFET N-CH 100V 9.4A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
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CYT3DLBBCBQ1BZSGS CYT3DLBBCBQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3DL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
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TLE493DW3B6B0HTSA1 TLE493DW3B6B0HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1990 Stücke:
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7+2.8 EUR
8+2.49 EUR
10+2.37 EUR
25+2.23 EUR
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500+1.87 EUR
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TLE493DP3B6A1HTSA1 TLE493DP3B6A1HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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TLE493DP3B6A2HTSA1 TLE493DP3B6A2HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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TLE493DP3B6A3HTSA1 TLE493DP3B6A3HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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10+2.56 EUR
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500+2.03 EUR
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TLE493DP3B6A0HTSA1 TLE493DP3B6A0HTSA1 Infineon Technologies Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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6+3.03 EUR
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10+2.56 EUR
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TZ810N22KOFTIMHPSA1 TZ810N22KOFTIMHPSA1 Infineon Technologies Infineon-TZ810N22KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669314a860eb Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
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OPTIGATRUSTMV3S2GOTOBO1 OPTIGATRUSTMV3S2GOTOBO1 Infineon Technologies Description: S2GO SECURITY OPTIGA M
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust M
Platform: Shield2Go
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2+13.2 EUR
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FF600R12IP4B60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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FF600R12IP4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
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CY5117-1X07I Infineon Technologies Description: INFINEON
Packaging: Bulk
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CY95F563KNPFT-G-UNE2 CY95F563KNPFT-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 12KB 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 15
Produkt ist nicht verfügbar
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TDA22560XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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TDA22560XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Tube
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TDA22594AXUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC387QP160F300SAEKXUMA2 TC387QP160F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
auf Bestellung 858 Stücke:
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1+75.52 EUR
10+62 EUR
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100+54.91 EUR
250+53.14 EUR
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TC389QP160F300SAEKXUMA2 TC389QP160F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Cut Tape (CT)
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
Produkt ist nicht verfügbar
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CY7C4225V-15ASC CY7C4225V-15ASC Infineon Technologies CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf Description: IC FIFO SYNC 1KX18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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CY62157G30-45BVXIT CY62157G30-45BVXIT Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+7.81 EUR
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CY62157G30-45BVXIT CY62157G30-45BVXIT Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
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3+8.08 EUR
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CY62167G30-45ZXIT CY62167G30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-45ZXIT CY62167G30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G30-45ZXIT CY62167G30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 990 Stücke:
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1+18.25 EUR
10+16.94 EUR
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50+16.02 EUR
100+15.62 EUR
250+15.29 EUR
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AUIRFS4115-7P Infineon Technologies INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw Description: AUIRFS4115 - 120V-300V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 35170 Stücke:
Lieferzeit 10-14 Tag (e)
101+4.49 EUR
Mindestbestellmenge: 101
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AUIRFS4115-7P AUIRFS4115-7P Infineon Technologies auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
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AUIRFS4115-7TRL AUIRFS4115-7TRL Infineon Technologies auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
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2EDL8034F5BXUMA1 2EDL8034F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8034F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
Produkt ist nicht verfügbar
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2EDL8034F5BXUMA1 2EDL8034F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8034F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
auf Bestellung 2153 Stücke:
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10+1.87 EUR
14+1.35 EUR
25+1.23 EUR
100+1.08 EUR
250+1.02 EUR
500+0.98 EUR
1000+0.94 EUR
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CY7C1370KV33-167AXIT CY7C1370KV33-167AXIT Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370KV33-167AXIT CY7C1370KV33-167AXIT Infineon Technologies Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_ Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
1+48.52 EUR
10+44.88 EUR
25+43.44 EUR
50+42.37 EUR
100+42.16 EUR
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CYUSB3314-88LTXIT CYUSB3314-88LTXIT Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF3205 auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f
AUIRF3205
Hersteller: Infineon Technologies
Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
auf Bestellung 27000 Stücke:
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Anzahl Preis
133+3.4 EUR
Mindestbestellmenge: 133
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AUIRFU8403 IRSDS18588-1.pdf?t.download=true&u=5oefqw
AUIRFU8403
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFU7746PBF irfr7746pbf.pdf?fileId=5546d462533600a401535635cbd72125
IRFU7746PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF1324STRL auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c
AUIRF1324STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BGAP3D30HE6327XUMA1 Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a
BGAP3D30HE6327XUMA1
Hersteller: Infineon Technologies
Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
Produkt ist nicht verfügbar
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BGAP3D30HE6327XUMA1 Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a
BGAP3D30HE6327XUMA1
Hersteller: Infineon Technologies
Description: RF AMP CELL 3.1-4.2GHZ 24VFQN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
auf Bestellung 5982 Stücke:
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Anzahl Preis
3+7.6 EUR
10+6.59 EUR
25+6.23 EUR
100+5.74 EUR
250+5.45 EUR
500+5.24 EUR
1000+5.04 EUR
Mindestbestellmenge: 3
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TLE92623BQXXUMA2 Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
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IR4427PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
auf Bestellung 38 Stücke:
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Anzahl Preis
5+4.19 EUR
10+3.12 EUR
Mindestbestellmenge: 5
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IPA80R1K4CEXKSA1 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
IPA80R1K4CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
134+1 EUR
Mindestbestellmenge: 134
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IPLK80R1K4P7ATMA1 Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223
IPLK80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
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IPLK80R1K4P7ATMA1 Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223
IPLK80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
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S25FL256SAGNFE003
S25FL256SAGNFE003
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGNFE000 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGNFE000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS128SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS128SDPBHA020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AIKQB120N75CP2AKSA1 Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2
AIKQB120N75CP2AKSA1
Hersteller: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C68013A-56BAXC download
CY7C68013A-56BAXC
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VFBGA
Packaging: Tray
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 56-VFBGA (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 1079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.73 EUR
10+20.42 EUR
25+19.1 EUR
100+17.64 EUR
490+16.54 EUR
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GAMECONTROLLERTOBO1 Infineon-XENSIV_Game_Controller_User_Manual-UserManual-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190dee4521070ee&da=t
GAMECONTROLLERTOBO1
Hersteller: Infineon Technologies
Description: GAMECONTROLLERTOBO1
Packaging: Box
Configuration: Controller
Contents: Battery Charger
Utilized IC / Part: PSoC™6 Bluetooth® LE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+271.09 EUR
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CY8C6247BTID54TXUMA1
Hersteller: Infineon Technologies
Description: IOT-PSOC6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C6247BTID54XQLA1
Hersteller: Infineon Technologies
Description: IOT-PSOC6
Packaging: Tray
Produkt ist nicht verfügbar
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CYAT61659-56LWS41T CYAT6165x.pdf
CYAT61659-56LWS41T
Hersteller: Infineon Technologies
Description: TrueTouch
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (8x8)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS850D0TAV33ATMA1 Infineon-TLS850D0TA-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc1015969edb50c4266
TLS850D0TAV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-7-1
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Enable, Reset
Grade: Automotive
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.43V @ 250mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 82 µA
Qualification: AEC-Q100
auf Bestellung 16809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
265+1.71 EUR
Mindestbestellmenge: 265
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S6T3J300411A176A2 Infineon-AN214051_Getting_Started_with_the_Traveo_Family_S6J3400_Series-ApplicationNotes-v04_00-EN.pdf?fileId=8ac78c8c7cdc391c017d0d2c83ad6408&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio
Hersteller: Infineon Technologies
Description: TOOL KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Produkt ist nicht verfügbar
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FD600R17KE3B2NOSA1 Infineon-FD600R17KE3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b43101dd5308
FD600R17KE3B2NOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 4300W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4300 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Produkt ist nicht verfügbar
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IAUC120N06S5N011ATMA1 Infineon-IAUC120N06S5N011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7fb5929e017fc1a9d3fd122c
IAUC120N06S5N011ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tj)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 60A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9822 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4872 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.56 EUR
100+2.48 EUR
500+2.17 EUR
Mindestbestellmenge: 4
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AUIRG4BC30U-S AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30U-S
Hersteller: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IDH02G65C5XKSA2 Infineon-IDH02G65C5-DS-v02_02-en.pdf?fileId=db3a304339dcf4b1013a030ab96758eb
IDH02G65C5XKSA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
auf Bestellung 2125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
468+0.99 EUR
Mindestbestellmenge: 468
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BC 847BF E6327 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC 847BF E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-TSFP-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BAS 70-02W E6327 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS 70-02W E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SCD-80
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BSC159N10LSFGATMA1 BSC159N10LSF+Rev2.07.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b499f85d47b36
BSC159N10LSFGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9.4A/63A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 15.9mOhm @ 50A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 72µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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CYT3DLBBCBQ1BZSGS Infineon-TRAVEO_T2G_CYT3DL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLBBCBQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 240MHz
Program Memory Size: 4.06MB (4.06M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 135
Produkt ist nicht verfügbar
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TLE493DW3B6B0HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B0HTSA1
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
8+2.49 EUR
10+2.37 EUR
25+2.23 EUR
50+2.14 EUR
100+2.05 EUR
500+1.87 EUR
1000+1.81 EUR
Mindestbestellmenge: 7
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TLE493DP3B6A1HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A1HTSA1
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
7+2.69 EUR
10+2.56 EUR
25+2.41 EUR
50+2.31 EUR
100+2.22 EUR
500+2.03 EUR
1000+1.96 EUR
Mindestbestellmenge: 6
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TLE493DP3B6A2HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A2HTSA1
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
7+2.69 EUR
10+2.56 EUR
25+2.41 EUR
50+2.31 EUR
100+2.22 EUR
500+2.03 EUR
1000+1.96 EUR
Mindestbestellmenge: 6
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TLE493DP3B6A3HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A3HTSA1
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
7+2.69 EUR
10+2.56 EUR
25+2.41 EUR
50+2.31 EUR
100+2.22 EUR
500+2.03 EUR
1000+1.96 EUR
Mindestbestellmenge: 6
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TLE493DP3B6A0HTSA1 Infineon-TLE493D-P3B6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f302ca0476fb
TLE493DP3B6A0HTSA1
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: SPI
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
7+2.69 EUR
10+2.56 EUR
25+2.41 EUR
50+2.31 EUR
100+2.22 EUR
500+2.03 EUR
1000+1.96 EUR
Mindestbestellmenge: 6
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TZ810N22KOFTIMHPSA1 Infineon-TZ810N22KOF-DS-v03_02-EN.pdf?fileId=5546d461464245d30146669314a860eb
TZ810N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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OPTIGATRUSTMV3S2GOTOBO1
OPTIGATRUSTMV3S2GOTOBO1
Hersteller: Infineon Technologies
Description: S2GO SECURITY OPTIGA M
Packaging: Bulk
Function: Security
Type: Interface
Contents: Board(s)
Utilized IC / Part: OPTIGA Trust M
Platform: Shield2Go
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.2 EUR
Mindestbestellmenge: 2
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FF600R12IP4B60BPSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
Produkt ist nicht verfügbar
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FF600R12IP4PB60BPSA1
Hersteller: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 37000 pF @ 25 V
Produkt ist nicht verfügbar
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CY5117-1X07I
Hersteller: Infineon Technologies
Description: INFINEON
Packaging: Bulk
Produkt ist nicht verfügbar
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CY95F563KNPFT-G-UNE2
CY95F563KNPFT-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 12KB 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 15
Produkt ist nicht verfügbar
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TDA22560XUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TDA22560XUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tube
Produkt ist nicht verfügbar
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TDA22594AXUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC387QP160F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387QP160F300SAEKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.52 EUR
10+62 EUR
25+58.62 EUR
100+54.91 EUR
250+53.14 EUR
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TC389QP160F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC389QP160F300SAEKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 10MB FLASH 516FBGA
Packaging: Cut Tape (CT)
Package / Case: 516-FBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 10MB (10M x 8)
RAM Size: 1.34M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-FBGA-516-1
Produkt ist nicht verfügbar
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CY7C4225V-15ASC CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf
CY7C4225V-15ASC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 1KX18 11NS 64TQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 11ns
Current - Supply (Max): 30mA
Supplier Device Package: 64-TQFP (10x10)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62157G30-45BVXIT download
CY62157G30-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+7.81 EUR
Mindestbestellmenge: 2000
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CY62157G30-45BVXIT download
CY62157G30-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.08 EUR
Mindestbestellmenge: 3
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CY62167G30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167G30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167G30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.25 EUR
10+16.94 EUR
25+16.41 EUR
50+16.02 EUR
100+15.62 EUR
250+15.29 EUR
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AUIRFS4115-7P INFN-S-A0002296895-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: AUIRFS4115 - 120V-300V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 35170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
101+4.49 EUR
Mindestbestellmenge: 101
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AUIRFS4115-7P auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb
AUIRFS4115-7P
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFS4115-7TRL auirfs4115-7p.pdf?fileId=5546d462533600a4015355b6c64614cb
AUIRFS4115-7TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 105A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 63A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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2EDL8034F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8034F5BXUMA1
Hersteller: Infineon Technologies
Description: 2EDL8034F5BXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
Produkt ist nicht verfügbar
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2EDL8034F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8034F5BXUMA1
Hersteller: Infineon Technologies
Description: 2EDL8034F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.4ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 4A, 4A
auf Bestellung 2153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
14+1.35 EUR
25+1.23 EUR
100+1.08 EUR
250+1.02 EUR
500+0.98 EUR
1000+0.94 EUR
Mindestbestellmenge: 10
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CY7C1370KV33-167AXIT Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-167AXIT
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370KV33-167AXIT Infineon-CY7C1370KV33_CY7C1370KVE33_CY7C1372KV33_CY7C1372KVE33_18-Mbit_(512_K_36_1_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed63ffb5691&utm_source=cypress&utm_
CY7C1370KV33-167AXIT
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.52 EUR
10+44.88 EUR
25+43.44 EUR
50+42.37 EUR
100+42.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYUSB3314-88LTXIT Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYUSB3314-88LTXIT
Hersteller: Infineon Technologies
Description: IC USB 3.0 HUB 4-PORT 88QFN
Packaging: Tape & Reel (TR)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 88-QFN (10x10)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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