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IPTC068N20NM6ATMA1 IPTC068N20NM6ATMA1 Infineon Technologies Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.75 EUR
10+10.74 EUR
100+7.9 EUR
500+6.75 EUR
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EVALM1IM06B50TOBO1 EVALM1IM06B50TOBO1 Infineon Technologies infineon-eval-m1-im06b50-usermanual-en.pdf Description: EVALM1IM06B50TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM06B50GC1
Embedded: No
Produkt ist nicht verfügbar
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IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 Infineon Technologies Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
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IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 Infineon Technologies Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 4200 Stücke:
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3+8.06 EUR
10+5.37 EUR
100+3.85 EUR
500+3.72 EUR
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1 Infineon Technologies IQDH88N06LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1 Infineon Technologies IQDH88N06LM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 4793 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.24 EUR
10+5.5 EUR
100+3.94 EUR
500+3.83 EUR
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IQFH68N06NM5ATMA1 IQFH68N06NM5ATMA1 Infineon Technologies Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
Produkt ist nicht verfügbar
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IQFH68N06NM5ATMA1 IQFH68N06NM5ATMA1 Infineon Technologies Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
auf Bestellung 209 Stücke:
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2+10.96 EUR
10+7.38 EUR
100+5.35 EUR
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IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
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IRF60DM206 IRF60DM206 Infineon Technologies irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
Produkt ist nicht verfügbar
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SLB9673XU20FW2624XTMA1 SLB9673XU20FW2624XTMA1 Infineon Technologies infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Produkt ist nicht verfügbar
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SLB9673XU20FW2624XTMA1 SLB9673XU20FW2624XTMA1 Infineon Technologies infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf Description: SLB9673XU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Produkt ist nicht verfügbar
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SLB9673AU20FW2624XTMA1 SLB9673AU20FW2624XTMA1 Infineon Technologies infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf Description: SLB9673AU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
auf Bestellung 1326 Stücke:
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2+9.43 EUR
10+7.2 EUR
25+6.64 EUR
100+6.02 EUR
250+5.73 EUR
500+5.55 EUR
1000+5.41 EUR
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CYT4DNJBHCQ1BZSGS CYT4DNJBHCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
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CYT4DNJBLCQ1BZSGS CYT4DNJBLCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
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IMT65R020M2HXUMA1 IMT65R020M2HXUMA1 Infineon Technologies Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
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IMT65R020M2HXUMA1 IMT65R020M2HXUMA1 Infineon Technologies Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 735 Stücke:
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1+20.24 EUR
10+14.12 EUR
100+11.45 EUR
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F410MR20W3M1HB11BPSA1 F410MR20W3M1HB11BPSA1 Infineon Technologies F410MR20W3M1HB11BPSA1.pdf Description: EASY STANDARD PLUS
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 1200V
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 470nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 68mA
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CHL8214-01CRT CHL8214-01CRT Infineon Technologies CHL8203_12_13_14_PB_v1.6_8-28-13.pdf Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I2C
Output Phases: 4
Clock Sync: No
Number of Outputs: 5
Produkt ist nicht verfügbar
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CY7C1061GE-10BVXI CY7C1061GE-10BVXI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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T501N65TOHXPSA1 Infineon Technologies Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
Produkt ist nicht verfügbar
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IGLR65R140D2XUMA1 IGLR65R140D2XUMA1 Infineon Technologies infineon-iglr65r140d2-datasheet-en.pdf Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
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IGLR65R140D2XUMA1 IGLR65R140D2XUMA1 Infineon Technologies infineon-iglr65r140d2-datasheet-en.pdf Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
auf Bestellung 4131 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.83 EUR
10+3.82 EUR
100+2.67 EUR
500+2.19 EUR
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IGT65R140D2ATMA1 IGT65R140D2ATMA1 Infineon Technologies Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b Description: IGT65R140D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
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IGT65R140D2ATMA1 IGT65R140D2ATMA1 Infineon Technologies Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b Description: IGT65R140D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
auf Bestellung 1791 Stücke:
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10+3.68 EUR
100+2.58 EUR
500+2.29 EUR
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CY14ME064J2-SXQ CY14ME064J2-SXQ Infineon Technologies Infineon-CY14MB064J_CY14ME064J_64_Kbit_8Kx8_Serial_I2C_nvSRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f206d70b83db2 Description: IC NVSRAM 64KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FF600R17ME4PBOSA1 FF600R17ME4PBOSA1 Infineon Technologies Infineon-FF600R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d5fc3c0f55350 Description: IGBT MODULE 1700V 600A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
auf Bestellung 36 Stücke:
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ETT630N18P60XPSA1 ETT630N18P60XPSA1 Infineon Technologies Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f Description: SCR MODULE 1.8KV 700A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 628 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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CY95F633HPMC-G-UNE2 CY95F633HPMC-G-UNE2 Infineon Technologies infineon-cy95630h-series-new-8fx-8-bit-microcontrollers-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration Description: IC MCU 8BIT 12KB 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
Produkt ist nicht verfügbar
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CY95F633HPMC-G-UNERE2 CY95F633HPMC-G-UNERE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY95F633HPMC-G-UNERE2 CY95F633HPMC-G-UNERE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGMFB001 S25FL256LAGMFB001 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
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S25FL256LAGMFB000 S25FL256LAGMFB000 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
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CY91F526DWEPMC-GSE2 CY91F526DWEPMC-GSE2 Infineon Technologies Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 56
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
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CY91F526FSCPMC-GSE1 CY91F526FSCPMC-GSE1 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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CY91F526FSCPMC-GSE2 CY91F526FSCPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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CYPD7291-68LDXST CYPD7291-68LDXST Infineon Technologies Infineon-CYPD7291_EZ-PD_CCG7D_Automotive_USB_Type-C_and_Buck-boost_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c85ecb34701863803b0161a99 Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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Lieferzeit 10-14 Tag (e)
2+12.25 EUR
10+9.48 EUR
25+8.8 EUR
100+8.04 EUR
250+7.68 EUR
500+7.46 EUR
1000+7.28 EUR
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IPP089N15NM6AKSA1 IPP089N15NM6AKSA1 Infineon Technologies Infineon-IPP089N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752e4c67042 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
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4+4.47 EUR
50+2.22 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.5 EUR
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TLE9869QXA20XUMA1 TLE9869QXA20XUMA1 Infineon Technologies Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c Description: IC MOTOR DRIVER 48VQFN
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Produkt ist nicht verfügbar
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TLE9835QXXUMA1 TLE9835QXXUMA1 Infineon Technologies TLE9835QX.pdf Description: IC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 11
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: XC800
Program Memory Type: FLASH (64kB)
Voltage - Supply: 3V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 3.25K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE9845QXXUMA1 TLE9845QXXUMA1 Infineon Technologies Infineon-TLE9845QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c44910243 Description: EMBEDDED POWER
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLE9842QXXUMA2 TLE9842QXXUMA2 Infineon Technologies Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE98422QXXUMA2 TLE98422QXXUMA2 Infineon Technologies Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511 Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TLE9843QXXUMA2 TLE9843QXXUMA2 Infineon Technologies Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d Description: EMBEDDED_POWER
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-79
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (48kB)
Controller Series: TLE984x
Voltage - Supply: 3V ~ 28V
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AUIRFR8403 AUIRFR8403 Infineon Technologies IRSDS18588-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
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XMC1302Q024F0032ABXTMA1 XMC1302Q024F0032ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
Produkt ist nicht verfügbar
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TD430N22KOFXPSA1 TD430N22KOFXPSA1 Infineon Technologies Infineon-TT430N-DS-v03_40-en_de.pdf?fileId=db3a304412b407950112b42fe3c14e2c Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TD430N22KOFTIMHPSA1 TD430N22KOFTIMHPSA1 Infineon Technologies Infineon-TT430N-DS-v03_40-en_de.pdf?fileId=db3a304412b407950112b42fe3c14e2c Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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TT430N22KOFXPSA1 TT430N22KOFXPSA1 Infineon Technologies Infineon-TT430N-DS-v03_40-en_de.pdf?fileId=db3a304412b407950112b42fe3c14e2c Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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XDPE192C3B0000XUMA1 XDPE192C3B0000XUMA1 Infineon Technologies Infineon-XDPE192C3B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7deb93586 Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
Produkt ist nicht verfügbar
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XDPE192C3B0000XUMA1 XDPE192C3B0000XUMA1 Infineon Technologies Infineon-XDPE192C3B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7deb93586 Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.73 EUR
10+7.49 EUR
25+6.92 EUR
100+6.31 EUR
250+6.01 EUR
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XDPE1A2G5B0000XUMA1 XDPE1A2G5B0000XUMA1 Infineon Technologies Infineon-XDPE1A2G5B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0a0d3523503 Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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XDPE1A2G5B0000XUMA1 XDPE1A2G5B0000XUMA1 Infineon Technologies Infineon-XDPE1A2G5B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0a0d3523503 Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.5 EUR
10+9.68 EUR
25+8.98 EUR
100+8.2 EUR
250+7.84 EUR
500+7.61 EUR
1000+7.43 EUR
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IPD047N03LF2SATMA1 IPD047N03LF2SATMA1 Infineon Technologies Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Description: MOSFET N-CH 30V 71A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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IPD047N03LF2SATMA1 IPD047N03LF2SATMA1 Infineon Technologies Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484 Description: MOSFET N-CH 30V 71A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
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BTM9011EPXUMA1 BTM9011EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.41 EUR
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BTM9011EPXUMA1 BTM9011EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3103 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+2.06 EUR
25+1.87 EUR
100+1.67 EUR
250+1.57 EUR
500+1.52 EUR
1000+1.47 EUR
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BSC085N025S G BSC085N025S G Infineon Technologies BSC085N025S_G.pdf Description: MOSFET N-CH 25V 14A/35A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V
Power Dissipation (Max): 2.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Produkt ist nicht verfügbar
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PTF141501E V1 PTF141501E V1 Infineon Technologies PTF141501E.pdf Description: RF MOSFET LDMOS 28V H-30260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.5GHz
Power - Output: 150W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-30260-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.5 A
Produkt ist nicht verfügbar
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CY95F128DPMC-GE1 CY95F128DPMC-GE1 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.3V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPTC068N20NM6ATMA1 Infineon-IPTC068N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626da9150613e
IPTC068N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPTC068N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 126A, 15V
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 251µA
Supplier Device Package: PG-HDSOP-16-U04
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 100 V
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+15.75 EUR
10+10.74 EUR
100+7.9 EUR
500+6.75 EUR
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EVALM1IM06B50TOBO1 infineon-eval-m1-im06b50-usermanual-en.pdf
EVALM1IM06B50TOBO1
Hersteller: Infineon Technologies
Description: EVALM1IM06B50TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM06B50GC1
Embedded: No
Produkt ist nicht verfügbar
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IQDH88N06LM5CGSCATMA1 Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f
IQDH88N06LM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
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IQDH88N06LM5CGSCATMA1 Infineon-IQDH88N06LM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6a49ff05e8f
IQDH88N06LM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 4200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.06 EUR
10+5.37 EUR
100+3.85 EUR
500+3.72 EUR
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1.pdf
IQDH88N06LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
Produkt ist nicht verfügbar
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IQDH88N06LM5SCATMA1 IQDH88N06LM5SCATMA1.pdf
IQDH88N06LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 447A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 30 V
auf Bestellung 4793 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.24 EUR
10+5.5 EUR
100+3.94 EUR
500+3.83 EUR
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IQFH68N06NM5ATMA1 Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640
IQFH68N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
Produkt ist nicht verfügbar
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IQFH68N06NM5ATMA1 Infineon-IQFH68N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e447a580640
IQFH68N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 273W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 217µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 30 V
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.96 EUR
10+7.38 EUR
100+5.35 EUR
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IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
Produkt ist nicht verfügbar
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IRF60DM206 irf60dm206.pdf?fileId=5546d462533600a4015355e433aa19ca
IRF60DM206
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 130A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric ME
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Supplier Device Package: DirectFET™ Isometric ME
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 25 V
Produkt ist nicht verfügbar
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SLB9673XU20FW2624XTMA1 infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf
SLB9673XU20FW2624XTMA1
Hersteller: Infineon Technologies
Description: SLB9673XU20FW2624XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Produkt ist nicht verfügbar
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SLB9673XU20FW2624XTMA1 infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf
SLB9673XU20FW2624XTMA1
Hersteller: Infineon Technologies
Description: SLB9673XU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Produkt ist nicht verfügbar
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SLB9673AU20FW2624XTMA1 infineon-slb9673-tpm20-i2c-fw26xx-ds-rev1-4-2024-11-13-datasheet-en.pdf
SLB9673AU20FW2624XTMA1
Hersteller: Infineon Technologies
Description: SLB9673AU20FW2624XTMA1
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
auf Bestellung 1326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.43 EUR
10+7.2 EUR
25+6.64 EUR
100+6.02 EUR
250+5.73 EUR
500+5.55 EUR
1000+5.41 EUR
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CYT4DNJBHCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBHCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Produkt ist nicht verfügbar
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CYT4DNJBLCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBLCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Produkt ist nicht verfügbar
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IMT65R020M2HXUMA1 Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49
IMT65R020M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R020M2HXUMA1 Infineon-IMT65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e05df523c49
IMT65R020M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 735 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+20.24 EUR
10+14.12 EUR
100+11.45 EUR
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F410MR20W3M1HB11BPSA1 F410MR20W3M1HB11BPSA1.pdf
F410MR20W3M1HB11BPSA1
Hersteller: Infineon Technologies
Description: EASY STANDARD PLUS
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 1200V
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 120A, 18V
Gate Charge (Qg) (Max) @ Vgs: 470nC @ 3V
Vgs(th) (Max) @ Id: 5.15V @ 68mA
auf Bestellung 17 Stücke:
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AnzahlPreis
1+474.58 EUR
16+441.52 EUR
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CHL8214-01CRT CHL8203_12_13_14_PB_v1.6_8-28-13.pdf
CHL8214-01CRT
Hersteller: Infineon Technologies
Description: IC REG BUCK 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: 0°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1.2MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-VQFN-40-903
Synchronous Rectifier: No
Control Features: Enable
Serial Interfaces: I2C
Output Phases: 4
Clock Sync: No
Number of Outputs: 5
Produkt ist nicht verfügbar
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CY7C1061GE-10BVXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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T501N65TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
Produkt ist nicht verfügbar
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IGLR65R140D2XUMA1 infineon-iglr65r140d2-datasheet-en.pdf
IGLR65R140D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
Produkt ist nicht verfügbar
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IGLR65R140D2XUMA1 infineon-iglr65r140d2-datasheet-en.pdf
IGLR65R140D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3.1A
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
auf Bestellung 4131 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.83 EUR
10+3.82 EUR
100+2.67 EUR
500+2.19 EUR
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IGT65R140D2ATMA1 Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b
IGT65R140D2ATMA1
Hersteller: Infineon Technologies
Description: IGT65R140D2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R140D2ATMA1 Infineon-IGT65R140D2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f0a5ea2f70a2b
IGT65R140D2ATMA1
Hersteller: Infineon Technologies
Description: IGT65R140D2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-HSOF-8-3
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 400 V
auf Bestellung 1791 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.63 EUR
10+3.68 EUR
100+2.58 EUR
500+2.29 EUR
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CY14ME064J2-SXQ Infineon-CY14MB064J_CY14ME064J_64_Kbit_8Kx8_Serial_I2C_nvSRAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017f206d70b83db2
CY14ME064J2-SXQ
Hersteller: Infineon Technologies
Description: IC NVSRAM 64KBIT I2C 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: I2C
Supplier Device Package: 8-SOIC
Memory Format: NVSRAM
Clock Frequency: 3.4 MHz
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FF600R17ME4PBOSA1 Infineon-FF600R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015d5fc3c0f55350
FF600R17ME4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 600A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+397.9 EUR
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ETT630N18P60XPSA1 Infineon-ETT630N18P60-DataSheet-v03_01-EN.pdf?fileId=5546d46278d64ffd017931ecaa3c3c8f
ETT630N18P60XPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 700A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 628 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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CY95F633HPMC-G-UNE2 infineon-cy95630h-series-new-8fx-8-bit-microcontrollers-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration
CY95F633HPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 12KB 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
Produkt ist nicht verfügbar
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CY95F633HPMC-G-UNERE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F633HPMC-G-UNERE2
Hersteller: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY95F633HPMC-G-UNERE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe
CY95F633HPMC-G-UNERE2
Hersteller: Infineon Technologies
Description: IC MM MCU 32LQFP
Packaging: Cut Tape (CT)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16.25MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256LAGMFB001 INFN-S-A0017271261-1.pdf
S25FL256LAGMFB001
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Produkt ist nicht verfügbar
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S25FL256LAGMFB000 INFN-S-A0017271261-1.pdf
S25FL256LAGMFB000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tray
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 32M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Produkt ist nicht verfügbar
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CY91F526DWEPMC-GSE2
CY91F526DWEPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 80LQFP
DigiKey Programmable: Not Verified
Number of I/O: 56
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 32x12b SAR; D/A 1x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY91F526FSCPMC-GSE1 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526FSCPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY91F526FSCPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526FSCPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 76
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 37x12b; D/A 2x8b
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 136K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CYPD7291-68LDXST Infineon-CYPD7291_EZ-PD_CCG7D_Automotive_USB_Type-C_and_Buck-boost_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c85ecb34701863803b0161a99
CYPD7291-68LDXST
Hersteller: Infineon Technologies
Description: CCG7D
Packaging: Cut Tape (CT)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.25 EUR
10+9.48 EUR
25+8.8 EUR
100+8.04 EUR
250+7.68 EUR
500+7.46 EUR
1000+7.28 EUR
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IPP089N15NM6AKSA1 Infineon-IPP089N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907752e4c67042
IPP089N15NM6AKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.47 EUR
50+2.22 EUR
100+2.01 EUR
500+1.62 EUR
1000+1.5 EUR
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TLE9869QXA20XUMA1 Infineon-TLE9869QXA20-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a8a3614cd3f3c
TLE9869QXA20XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH (128kB)
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 150°C
RAM Size: 6K x 8
Interface: LIN, SSI, UART
Produkt ist nicht verfügbar
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TLE9835QXXUMA1 TLE9835QX.pdf
TLE9835QXXUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 48VQFN
DigiKey Programmable: Not Verified
Number of I/O: 11
Grade: Automotive
Supplier Device Package: PG-VQFN-48-29
Core Processor: XC800
Program Memory Type: FLASH (64kB)
Voltage - Supply: 3V ~ 27V
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 3.25K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE9845QXXUMA1 Infineon-TLE9845QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a892c44910243
TLE9845QXXUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED POWER
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (48kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 87049 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
78+5.87 EUR
Mindestbestellmenge: 78 Stücke
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TLE9842QXXUMA2 Infineon-TLE9842QX-DS-v01_00-EN.pdf?fileId=5546d4625a888733015a894805d1035c
TLE9842QXXUMA2
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (36kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE98422QXXUMA2 Infineon-TLE9842-2QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aabc5f7511
TLE98422QXXUMA2
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SSI, UART
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Controller Series: TLE984x
Program Memory Type: FLASH (40kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE9843QXXUMA2 Infineon-TLE9843QX-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a84aaad64750d
TLE9843QXXUMA2
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Operating Temperature: -40°C ~ 150°C (TJ)
RAM Size: 4K x 8
Interface: LIN, SSI, UART
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 10
Grade: Automotive
Supplier Device Package: PG-VQFN-48-79
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH (48kB)
Controller Series: TLE984x
Voltage - Supply: 3V ~ 28V
Produkt ist nicht verfügbar
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AUIRFR8403 IRSDS18588-1.pdf?t.download=true&u=5oefqw
AUIRFR8403
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2656 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
238+1.92 EUR
Mindestbestellmenge: 238 Stücke
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XMC1302Q024F0032ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q024F0032ABXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
Produkt ist nicht verfügbar
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TD430N22KOFXPSA1 Infineon-TT430N-DS-v03_40-en_de.pdf?fileId=db3a304412b407950112b42fe3c14e2c
TD430N22KOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TD430N22KOFTIMHPSA1 Infineon-TT430N-DS-v03_40-en_de.pdf?fileId=db3a304412b407950112b42fe3c14e2c
TD430N22KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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TT430N22KOFXPSA1 Infineon-TT430N-DS-v03_40-en_de.pdf?fileId=db3a304412b407950112b42fe3c14e2c
TT430N22KOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 800A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 430 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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XDPE192C3B0000XUMA1 Infineon-XDPE192C3B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7deb93586
XDPE192C3B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
Produkt ist nicht verfügbar
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XDPE192C3B0000XUMA1 Infineon-XDPE192C3B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7deb93586
XDPE192C3B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 12V
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-48-63
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.73 EUR
10+7.49 EUR
25+6.92 EUR
100+6.31 EUR
250+6.01 EUR
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XDPE1A2G5B0000XUMA1 Infineon-XDPE1A2G5B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0a0d3523503
XDPE1A2G5B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
Produkt ist nicht verfügbar
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XDPE1A2G5B0000XUMA1 Infineon-XDPE1A2G5B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0a0d3523503
XDPE1A2G5B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Voltage - Output: 0.05V ~ 3.1V
Mounting Type: Surface Mount
Number of Outputs: 2
Applications: Controller, High Performance Processor
Supplier Device Package: PG-VQFN-56
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.5 EUR
10+9.68 EUR
25+8.98 EUR
100+8.2 EUR
250+7.84 EUR
500+7.61 EUR
1000+7.43 EUR
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IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
IPD047N03LF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 71A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Produkt ist nicht verfügbar
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IPD047N03LF2SATMA1 Infineon-IPD047N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b89c5f296484
IPD047N03LF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 71A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 40A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.81 EUR
16+1.14 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.53 EUR
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BTM9011EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9011EPXUMA1
Hersteller: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+1.41 EUR
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BTM9011EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9011EPXUMA1
Hersteller: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 9.2A
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3103 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.8 EUR
10+2.06 EUR
25+1.87 EUR
100+1.67 EUR
250+1.57 EUR
500+1.52 EUR
1000+1.47 EUR
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BSC085N025S G BSC085N025S_G.pdf
BSC085N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 14A/35A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 35A, 10V
Power Dissipation (Max): 2.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Produkt ist nicht verfügbar
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PTF141501E V1 PTF141501E.pdf
PTF141501E V1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-30260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.5GHz
Power - Output: 150W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-30260-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.5 A
Produkt ist nicht verfügbar
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CY95F128DPMC-GE1 download
CY95F128DPMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.3V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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