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2EDL8033F5BXUMA1 2EDL8033F5BXUMA1 Infineon Technologies 448_2EDL803_Datasheet.pdf Description: 2EDL8033F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
auf Bestellung 2455 Stücke:
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10+1.83 EUR
14+1.33 EUR
25+1.21 EUR
100+1.07 EUR
250+1 EUR
500+0.96 EUR
1000+0.93 EUR
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IAUTN06S5N008TATMA1 IAUTN06S5N008TATMA1 Infineon Technologies Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7 Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
auf Bestellung 1800 Stücke:
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1800+4.63 EUR
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IAUTN06S5N008TATMA1 IAUTN06S5N008TATMA1 Infineon Technologies Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
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BGA5H1BN6E6328XTSA1 BGA5H1BN6E6328XTSA1 Infineon Technologies Description: RF MMIC SUB 3 GHZ
Packaging: Tray
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 9.8mA
Noise Figure: 0.7dB
P1dB: -16dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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ISA150233C03LMDSXTMA ISA150233C03LMDSXTMA Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: ISA150233C03LMDSXTMA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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ISA150233C03LMDSXTMA ISA150233C03LMDSXTMA Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: ISA150233C03LMDSXTMA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 479 Stücke:
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11+1.74 EUR
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ISA150233C03LMDSXTMA1 Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
auf Bestellung 316 Stücke:
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TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
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1000+51.17 EUR
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TC387TP128F300SAEKXUMA2 TC387TP128F300SAEKXUMA2 Infineon Technologies Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
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1+75.47 EUR
10+61.96 EUR
25+58.59 EUR
100+54.88 EUR
250+53.11 EUR
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TC399XX256F300SBDLXUMA1 TC399XX256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XP256F300SBDLXUMA1 TC399XP256F300SBDLXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC397XP256F300SBDKXUMA1 TC397XP256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC397XX256F300SBDKXUMA1 TC397XX256F300SBDKXUMA1 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCM88359CUBGT Infineon Technologies Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
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IRF60B217 IRF60B217 Infineon Technologies irf60b217 Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Produkt ist nicht verfügbar
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
Produkt ist nicht verfügbar
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BSS131IXUSA1 BSS131IXUSA1 Infineon Technologies 448_BSS131I.pdf Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
58+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
Produkt ist nicht verfügbar
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BSS83IXUSA1 BSS83IXUSA1 Infineon Technologies 448_BSS83I.pdf Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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IRFP460PBF IRFP460PBF Infineon Technologies 91237.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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XE164F96F80LACFXQMA1 XE164F96F80LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIGW40N65H5XKSA1 AIGW40N65H5XKSA1 Infineon Technologies Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
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F3L420R12W3H7H21BPSA1 F3L420R12W3H7H21BPSA1 Infineon Technologies Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7 Description: F3L420R12W3H7H21BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
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F3L420R12W4H7H11BPSA1 F3L420R12W4H7H11BPSA1 Infineon Technologies Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b Description: F3L420R12W4H7H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
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IRFP2907PBFXKMA1 IRFP2907PBFXKMA1 Infineon Technologies Infineon-IRFP2907-DataSheet-v01_00-EN.pdf Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
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ISCH54N04NM7VATMA1 ISCH54N04NM7VATMA1 Infineon Technologies 448_ISCH54N04NM7V.pdf Description: ISCH54N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
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ISCH54N04NM7VATMA1 ISCH54N04NM7VATMA1 Infineon Technologies 448_ISCH54N04NM7V.pdf Description: ISCH54N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSTHUYA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
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CYT2BL4CXAQ0AZEGSHQLA1 Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Produkt ist nicht verfügbar
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TLE5046MTICAKLRHALA1 TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
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TLE5046MTICAKLRHALA1 TLE5046MTICAKLRHALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
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TLE5046MTICPW2100HALA1 TLE5046MTICPW2100HALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
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IRF8304MTRPBF IRF8304MTRPBF Infineon Technologies irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IRF8308MTRPBF IRF8308MTRPBF Infineon Technologies irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61 Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
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IRF830PBF IRF830PBF Infineon Technologies irl620.pdf Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
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FF600R12KE4PBOSA1 FF600R12KE4PBOSA1 Infineon Technologies Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
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IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 Infineon Technologies IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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IRG8P25N120KD-EPBF IRG8P25N120KD-EPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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BSS84IXUSA1 BSS84IXUSA1 Infineon Technologies 448_BSS84I.pdf Description: BSS84IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
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BSS84IXUSA1 BSS84IXUSA1 Infineon Technologies 448_BSS84I.pdf Description: BSS84IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
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48+0.37 EUR
80+0.22 EUR
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TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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TLE9166EQXUMA1 TLE9166EQXUMA1 Infineon Technologies Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80 Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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IAUZN04S7L046ATMA1 IAUZN04S7L046ATMA1 Infineon Technologies Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L046ATMA1 IAUZN04S7L046ATMA1 Infineon Technologies Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
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11+1.72 EUR
17+1.08 EUR
100+0.71 EUR
500+0.55 EUR
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ICE5AR4770BZS1XKLA1 ICE5AR4770BZS1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5AR4770BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 26.5 W
auf Bestellung 2000 Stücke:
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8+2.41 EUR
50+1.23 EUR
100+1.11 EUR
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ICE5BR4780BZ1XKLA1 ICE5BR4780BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5BR4780BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
50+1.29 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.78 EUR
2000+0.75 EUR
Mindestbestellmenge: 7
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ICE5BR3995BZ1XKLA1 ICE5BR3995BZ1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5BR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
50+1.67 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR3995BZ1XKLA1 ICE5AR3995BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5AR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
50+1.79 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.09 EUR
2000+1.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ICE5BR2280BZ1XKLA1 ICE5BR2280BZ1XKLA1 Infineon Technologies Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605 Description: ICE5BR2280BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 40 W
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
50+1.85 EUR
100+1.67 EUR
500+1.33 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
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IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 Infineon Technologies IAUCN08S7N024-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 Infineon Technologies IAUCN08S7N024-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.35 EUR
10+2.82 EUR
100+2.02 EUR
500+1.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR0680BZS1XKLA1 ICE5AR0680BZS1XKLA1 Infineon Technologies Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf Description: ICE5AR0680BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 66 W
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.42 EUR
50+2.46 EUR
100+2.27 EUR
500+1.81 EUR
1000+1.6 EUR
Mindestbestellmenge: 4
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TLE4803S16S0000XUMA2 TLE4803S16S0000XUMA2 Infineon Technologies Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4803S16S0000XUMA2 TLE4803S16S0000XUMA2 Infineon Technologies Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 TLE4801C16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 TLE4801C16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 TLE4801S16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 TLE4801S16S0000XUMA2 Infineon Technologies Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7 Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
2EDL8033F5BXUMA1 448_2EDL803_Datasheet.pdf
2EDL8033F5BXUMA1
Hersteller: Infineon Technologies
Description: 2EDL8033F5BXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-DSO-8-92
Rise / Fall Time (Typ): 4.6ns, 3.3ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2.1V, 1.9V
Current - Peak Output (Source, Sink): 3A, 6A
auf Bestellung 2455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
14+1.33 EUR
25+1.21 EUR
100+1.07 EUR
250+1 EUR
500+0.96 EUR
1000+0.93 EUR
Mindestbestellmenge: 10
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IAUTN06S5N008TATMA1 Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7
IAUTN06S5N008TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+4.63 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN06S5N008TATMA1 Infineon-IAUTN06S5N008T-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb347018631414d0a0df7
IAUTN06S5N008TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 358W (Tc)
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 136A (Ta), 350A (Tj)
Rds On (Max) @ Id, Vgs: 0.79mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3V @ 275µA
auf Bestellung 2251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.12 EUR
10+7.53 EUR
100+5.67 EUR
Mindestbestellmenge: 2
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BGA5H1BN6E6328XTSA1
BGA5H1BN6E6328XTSA1
Hersteller: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Tray
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.69GHz
RF Type: LTE
Voltage - Supply: 1.5V ~ 3.6V
Gain: 20dB
Current - Supply: 9.8mA
Noise Figure: 0.7dB
P1dB: -16dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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ISA150233C03LMDSXTMA Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA
Hersteller: Infineon Technologies
Description: ISA150233C03LMDSXTMA
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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ISA150233C03LMDSXTMA Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA
Hersteller: Infineon Technologies
Description: ISA150233C03LMDSXTMA
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.74 EUR
100+1.17 EUR
Mindestbestellmenge: 7
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ISA150233C03LMDSXTMA1 Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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AUIRF1324STRL INFN-S-A0002297093-1.pdf?t.download=true&u=5oefqw
AUIRF1324STRL
Hersteller: Infineon Technologies
Description: AUIRF1324 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
auf Bestellung 316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
97+4.68 EUR
Mindestbestellmenge: 97
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TC387TP128F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387TP128F300SAEKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+51.17 EUR
Mindestbestellmenge: 1000
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TC387TP128F300SAEKXUMA2 Infineon-TC38x-DataSheet-v01_02-EN.pdf?fileId=5546d4626f229553016fb316e6cf748b
TC387TP128F300SAEKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 1.25M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512K x 8
Core Processor: TriCore™
Data Converters: A/D 110 SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core, Dual-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+75.47 EUR
10+61.96 EUR
25+58.59 EUR
100+54.88 EUR
250+53.11 EUR
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TC399XX256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XX256F300SBDLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC399XP256F300SBDLXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC399XP256F300SBDLXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.75M x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 100 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-516-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC397XP256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC397XX256F300SBDKXUMA1 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XX256F300SBDKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 6.75M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1M x 8
Core Processor: TriCore™
Data Converters: A/D 76 SAR, Sigma-Delta
Core Size: 32-Bit 6-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Peripherals: DMA, I2S, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCM88359CUBGT
Hersteller: Infineon Technologies
Description: 802.11AC HT80 RSDB + BT4.1 INDUS
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF60B217 irf60b217
IRF60B217
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
auf Bestellung 645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
324+1.39 EUR
Mindestbestellmenge: 324
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IRF60B217 irf60b217
IRF60B217
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 36A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 50µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 25 V
Produkt ist nicht verfügbar
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Hersteller: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
Produkt ist nicht verfügbar
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BSS131IXUSA1 448_BSS131I.pdf
BSS131IXUSA1
Hersteller: Infineon Technologies
Description: BSS131IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 109mA (Ta), 121mA (Tc)
Rds On (Max) @ Id, Vgs: 14Ohm @ 120mA, 10V
Power Dissipation (Max): 400mW (Ta), 440mW (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 120 V
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
58+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 36
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BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Hersteller: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
Produkt ist nicht verfügbar
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BSS83IXUSA1 448_BSS83I.pdf
BSS83IXUSA1
Hersteller: Infineon Technologies
Description: BSS83IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), 550mA (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 300mA, 10V
Power Dissipation (Max): 400mW (Ta), 1.04W (Tc)
Vgs(th) (Max) @ Id: 2V @ 34µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.09 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 72 pF @ 30 V
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
62+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 38
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IRFP460PBF 91237.pdf
IRFP460PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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XE164F96F80LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164F96F80LACFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 82K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIGW40N65H5XKSA1 Infineon-AIGW40N65H5-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015d0809d9967f2c
AIGW40N65H5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3-41
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+15.2 EUR
Mindestbestellmenge: 30
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F3L420R12W3H7H21BPSA1 Infineon-F3L420R12W3H7_H21-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fd8fb54733d7
F3L420R12W3H7H21BPSA1
Hersteller: Infineon Technologies
Description: F3L420R12W3H7H21BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 240A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 330 pF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+125.73 EUR
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F3L420R12W4H7H11BPSA1 Infineon-F3L420R12W4H7_H11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196e91ba5d1228b
F3L420R12W4H7H11BPSA1
Hersteller: Infineon Technologies
Description: F3L420R12W4H7H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.76V @ 15V, 250A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 26 µA
Input Capacitance (Cies) @ Vce: 47700 pF @ 25 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+265.65 EUR
6+246.42 EUR
12+240.05 EUR
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IRFP2907PBFXKMA1 Infineon-IRFP2907-DataSheet-v01_00-EN.pdf
IRFP2907PBFXKMA1
Hersteller: Infineon Technologies
Description: PLANAR 40<-<100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 125A, 10V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 620 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Produkt ist nicht verfügbar
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ISCH54N04NM7VATMA1 448_ISCH54N04NM7V.pdf
ISCH54N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISCH54N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
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ISCH54N04NM7VATMA1 448_ISCH54N04NM7V.pdf
ISCH54N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISCH54N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 458A (Tc)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 113µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 20 V
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSTHUYA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2BL4CXAQ0AZEGSHQLA1 infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Produkt ist nicht verfügbar
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TLE5046MTICAKLRHALA1
TLE5046MTICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.58 EUR
10+2.46 EUR
25+2.31 EUR
50+2.21 EUR
100+2.12 EUR
500+1.94 EUR
1000+1.87 EUR
Mindestbestellmenge: 7
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TLE5046MTICAKLRHALA1
TLE5046MTICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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TLE5046MTICPW2100HALA1
TLE5046MTICPW2100HALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.58 EUR
10+2.46 EUR
25+2.31 EUR
50+2.21 EUR
100+2.12 EUR
500+1.94 EUR
1000+1.87 EUR
Mindestbestellmenge: 7
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IRF8304MTRPBF irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d
IRF8304MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8308MTRPBF irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61
IRF8308MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Produkt ist nicht verfügbar
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IRF830PBF irl620.pdf
IRF830PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
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FF600R12KE4PBOSA1 Infineon-FF600R12KE4P-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601701f0f154740cf
FF600R12KE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+273.56 EUR
Mindestbestellmenge: 2
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IPI320N20N3GAKSA1 IPP_B_I_320N20N3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f170124967064ba184a
IPI320N20N3GAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+74.47 EUR
Mindestbestellmenge: 6
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IRG8P25N120KD-EPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KD-EPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 40A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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BSS84IXUSA1 448_BSS84I.pdf
BSS84IXUSA1
Hersteller: Infineon Technologies
Description: BSS84IXUSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
Produkt ist nicht verfügbar
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BSS84IXUSA1 448_BSS84I.pdf
BSS84IXUSA1
Hersteller: Infineon Technologies
Description: BSS84IXUSA1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta), 290mA (Tc)
Rds On (Max) @ Id, Vgs: 5.5Ohm @ 180mA, 10V
Power Dissipation (Max): 400mW (Ta), 960mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23-3-U03
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 780 pC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 30 V
auf Bestellung 2708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
80+0.22 EUR
129+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
Mindestbestellmenge: 48
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TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9166EQXUMA1 Infineon-TLE9166_Product_Overview-ProductOverview-v01_02-EN.pdf?fileId=8ac78c8c90530b3a01914711af523f80
TLE9166EQXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.1A, 3A, 5A, 7A, 8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6), High Side (5)
Voltage - Supply: 3V ~ 5.5V
Applications: General Purpose
Technology: NMOS
Supplier Device Package: PG-TSDSO-32-1
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.76 EUR
Mindestbestellmenge: 4
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IAUZN04S7L046ATMA1 Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd
IAUZN04S7L046ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.41 EUR
Mindestbestellmenge: 5000
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IAUZN04S7L046ATMA1 Infineon-IAUZN04S7L046-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ecf4a6acd
IAUZN04S7L046ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
17+1.08 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 11
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ICE5AR4770BZS1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5AR4770BZS1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR4770BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 26.5 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
50+1.23 EUR
100+1.11 EUR
500+0.88 EUR
1000+0.75 EUR
2000+0.72 EUR
Mindestbestellmenge: 8
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ICE5BR4780BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR4780BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR4780BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
50+1.29 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.78 EUR
2000+0.75 EUR
Mindestbestellmenge: 7
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ICE5BR3995BZ1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5BR3995BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
50+1.67 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR3995BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5AR3995BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR3995BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 950V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 30 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
50+1.79 EUR
100+1.62 EUR
500+1.29 EUR
1000+1.09 EUR
2000+1.05 EUR
Mindestbestellmenge: 6
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ICE5BR2280BZ1XKLA1 Infineon-ICE5xRxxxxxZ-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c7f2a768a017f8bce00aa6605
ICE5BR2280BZ1XKLA1
Hersteller: Infineon Technologies
Description: ICE5BR2280BZ1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 40 W
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
50+1.85 EUR
100+1.67 EUR
500+1.33 EUR
1000+1.13 EUR
Mindestbestellmenge: 5
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IAUCN08S7N024ATMA1 IAUCN08S7N024-Data-Sheet-10-Infineon.pdf
IAUCN08S7N024ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN08S7N024ATMA1 IAUCN08S7N024-Data-Sheet-10-Infineon.pdf
IAUCN08S7N024ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.35 EUR
10+2.82 EUR
100+2.02 EUR
500+1.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
ICE5AR0680BZS1XKLA1 Infineon-GEN5_Plus_FF_ICE5xRxxxxBZx-1-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190552a82d122cf
ICE5AR0680BZS1XKLA1
Hersteller: Infineon Technologies
Description: ICE5AR0680BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 66 W
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
50+2.46 EUR
100+2.27 EUR
500+1.81 EUR
1000+1.6 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TLE4803S16S0000XUMA2 Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe
TLE4803S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4803S16S0000XUMA2 Infineon-TLE4803-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194ff40ea3901fe
TLE4803S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle, Linear
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801C16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801C16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801C16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4801S16S0000XUMA2 Infineon-TLE4801-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194ff40da0401f7
TLE4801S16S0000XUMA2
Hersteller: Infineon Technologies
Description: POSITION SENS ATV
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.4V ~ 6V
Actuator Type: External Magnet, Not Included
Technology: Inductive
For Measuring: Angle
Supplier Device Package: PG-TSSOP-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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