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IR2102STRPBF IR2102STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2102STRPBF IR2102STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
auf Bestellung 55 Stücke:
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12+1.57 EUR
25+1.43 EUR
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IRS2124STRPBF IRS2124STRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2124STRPBF IRS2124STRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
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FS410R12A7P1BHPSA1 FS410R12A7P1BHPSA1 Infineon Technologies infineon-fs410r12a7p1b-datasheet-en.pdf Description: IGBT MOD 1200V 300A HDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 775 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24600 pF @ 25 V
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BFP420FH6327XTSA1 BFP420FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
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IRF6662TRPBF IRF6662TRPBF Infineon Technologies irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6662TRPBF IRF6662TRPBF Infineon Technologies irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
auf Bestellung 457 Stücke:
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10+3.13 EUR
100+2.17 EUR
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TLE9350BSJXTMA1 TLE9350BSJXTMA1 Infineon Technologies Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+0.77 EUR
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TLE9350BSJXTMA1 TLE9350BSJXTMA1 Infineon Technologies Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4 Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3704 Stücke:
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11+1.62 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
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AIMZA75R008M1HXKSA1 AIMZA75R008M1HXKSA1 Infineon Technologies Infineon-AIMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c26c0f0e1f Description: AUTOMOTIVE_SICMOS
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 118 Stücke:
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1+59.7 EUR
30+39.6 EUR
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AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2 Description: SICFET N-CH 750V 64A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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1000+11.29 EUR
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AIMBG75R027M1HXTMA1 AIMBG75R027M1HXTMA1 Infineon Technologies Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2 Description: SICFET N-CH 750V 64A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1070 Stücke:
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1+21.24 EUR
10+15.4 EUR
100+13.82 EUR
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CYPD822952LQXITXUMA1 Infineon Technologies Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683 Description: USB-C PC
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
Produkt ist nicht verfügbar
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CYPD822952LQXIXQLA1 Infineon Technologies Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683 Description: USB-C PC
Packaging: Tray
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
Produkt ist nicht verfügbar
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EVAL60UTR11WINGTOBO1 EVAL60UTR11WINGTOBO1 Infineon Technologies UM_KIT_CSK_BGT60UTR11AIP-Wingboard_Userguide-EN.pdf Description: EVAL60UTR11WINGTOBO1
Packaging: Box
auf Bestellung 14 Stücke:
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1+44.53 EUR
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AIMCQ120R040M1TXTMA1 AIMCQ120R040M1TXTMA1 Infineon Technologies AIMCQ120R040M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMCQ120R040M1TXTMA1 AIMCQ120R040M1TXTMA1 Infineon Technologies AIMCQ120R040M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 690 Stücke:
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1+18.96 EUR
10+13.22 EUR
100+11.51 EUR
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ISZ015N04NM7VATMA1 ISZ015N04NM7VATMA1 Infineon Technologies 448_ISZ015N04NM7V.pdf Description: ISZ015N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
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5000+0.74 EUR
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ISZ015N04NM7VATMA1 ISZ015N04NM7VATMA1 Infineon Technologies 448_ISZ015N04NM7V.pdf Description: ISZ015N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
auf Bestellung 6894 Stücke:
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10+1.81 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.89 EUR
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CY8C20566-24PVXI CY8C20566-24PVXI Infineon Technologies Description: IC MCU 32K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 1050 Stücke:
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3+8.41 EUR
10+6.44 EUR
30+5.86 EUR
120+5.34 EUR
270+5.12 EUR
510+4.98 EUR
1020+4.85 EUR
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EVINVHPD2SICFS0108TOBO2 Infineon Technologies Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS01MR08A8MA2
Embedded: No
auf Bestellung 3 Stücke:
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1+8974.94 EUR
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EVINVHPD2SICFS0212TOBO1 Infineon Technologies Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS02MR12A8MA2
Embedded: No
Produkt ist nicht verfügbar
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CY7C1354DV25-200BZI CY7C1354DV25-200BZI Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1470BV25-200BZI CY7C1470BV25-200BZI Infineon Technologies CY7C1470%2C72%2C74BV25.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1312BV18-200BZI CY7C1312BV18-200BZI Infineon Technologies CY7C1310%2C12%2C14%2C1914BV18.pdf Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1415AV18-200BZI CY7C1415AV18-200BZI Infineon Technologies CY7C1411%2C13%2C15%2C26AV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1414BV18-200BZI CY7C1414BV18-200BZI Infineon Technologies CY7C1412%2C14BV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY7C1470BV33-200BZI CY7C1470BV33-200BZI Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1380DV33-200BZI CY7C1380DV33-200BZI Infineon Technologies Infineon-CY7C1380DV33_CY7C1382DV33_18-MBIT_(512_K_X_36_1_M_X_18)_PIPELINED_SRAM_Datasheet-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1488335f9 Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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S25FL512SDPBHBC10 S25FL512SDPBHBC10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
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IQFH61N06NM5ATMA1 IQFH61N06NM5ATMA1 Infineon Technologies Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
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IQFH61N06NM5ATMA1 IQFH61N06NM5ATMA1 Infineon Technologies Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
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CY8C4126LDEHVS114AQLA1 CY8C4126LDEHVS114AQLA1 Infineon Technologies Infineon-CY8C41x5_CY8C41x6_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c956a0a470195817712a75d7a Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 33
Qualification: AEC-Q100
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CY25200K-ZXC004A Infineon Technologies Description: IC CLOCK GENERATOR
Packaging: Tube
DigiKey Programmable: Not Verified
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IMZC140R019M2HXKSA1 IMZC140R019M2HXKSA1 Infineon Technologies infineon-imzc140r019m2h-datasheet-en.pdf Description: IMZC140R019M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
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IMZC140R024M2HXKSA1 IMZC140R024M2HXKSA1 Infineon Technologies infineon-imzc140r024m2h-datasheet-en.pdf Description: IMZC140R024M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
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EB2ED24103D1BCSPTOBO1 EB2ED24103D1BCSPTOBO1 Infineon Technologies Description: EB 2ED2410 3D 1BCSP
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
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DD800S17K3_B2 Infineon Technologies DD800S17K3_B2.pdf Description: DIODE MODULE GEN PURP 1700V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
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IMZA120R012M2HXKSA1 IMZA120R012M2HXKSA1 Infineon Technologies infineon-imza120r012m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fde0d5f5dc5 Description: IMZA120R012M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
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IM66D130MV01XTMA1 IM66D130MV01XTMA1 Infineon Technologies Description: IM66D130MV01XTMA1
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
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IM66D130MV01XTMA1 IM66D130MV01XTMA1 Infineon Technologies Description: IM66D130MV01XTMA1
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
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KITIM68D121JV01FLEXTOBO1 KITIM68D121JV01FLEXTOBO1 Infineon Technologies infineon-xensiv-sensor-solutions-product-selection-guide-en.pdf Description: KITIM68D121JV01FLEXTOBO1
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM68D121JV01
Secondary Attributes: Analog Output
Embedded: No
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IMDQ75R008M1HXUMA1 IMDQ75R008M1HXUMA1 Infineon Technologies Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMDQ75R008M1HXUMA1 IMDQ75R008M1HXUMA1 Infineon Technologies Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
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ISC025N06LM6ATMA1 ISC025N06LM6ATMA1 Infineon Technologies Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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IRAMS06UP60A-2 IRAMS06UP60A-2 Infineon Technologies IRAMS06UP60A.pdf Description: IGBT IPM 600V 6A 23-PWRSIP MOD
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
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S26KS256SDGBHB030 S26KS256SDGBHB030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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7GA830343H0 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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CY8C29866-24AXIT CY8C29866-24AXIT Infineon Technologies Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 64
DigiKey Programmable: Not Verified
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CY8C4146AZE-S275T CY8C4146AZE-S275T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CYAT81689-100AS71Z CYAT81689-100AS71Z Infineon Technologies CYAT8168x.pdf Description: TrueTouch
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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AIMBG75R025M2HXTMA1 AIMBG75R025M2HXTMA1 Infineon Technologies Description: AIMBG75R025M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R025M2HXTMA1 AIMBG75R025M2HXTMA1 Infineon Technologies Description: AIMBG75R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IMTA65R033M2HXTMA1 IMTA65R033M2HXTMA1 Infineon Technologies Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMTA65R033M2HXTMA1 IMTA65R033M2HXTMA1 Infineon Technologies Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 1791 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.35 EUR
10+10.51 EUR
100+7.78 EUR
500+7.66 EUR
Mindestbestellmenge: 2
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TLE9018DQKXUMA1 TLE9018DQKXUMA1 Infineon Technologies infineon-tle9018dqk-datasheet-en.pdf Description: BATTERYMANAGEMENT_ICS
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9018DQKXUMA1 TLE9018DQKXUMA1 Infineon Technologies infineon-tle9018dqk-datasheet-en.pdf Description: BATTERYMANAGEMENT_ICS
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.21 EUR
10+11.86 EUR
25+11.03 EUR
100+10.11 EUR
250+9.67 EUR
Mindestbestellmenge: 2
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TLE9189QVWSXUMA1 TLE9189QVWSXUMA1 Infineon Technologies Infineon-TLE9189QV-DataSheet-v01_00-EN.pdf Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.2V ~ 36V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BGSX33MA16E6327XTSA1 Infineon Technologies Description: ANTENNA DEVICES
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2102STRPBF IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
12+1.57 EUR
25+1.43 EUR
Mindestbestellmenge: 9
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IRS2124STRPBF fundamentals-of-power-semiconductors
IRS2124STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2124STRPBF fundamentals-of-power-semiconductors
IRS2124STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 80ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 500mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 15908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
185+2.48 EUR
Mindestbestellmenge: 185
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FS410R12A7P1BHPSA1 infineon-fs410r12a7p1b-datasheet-en.pdf
FS410R12A7P1BHPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A HDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.58V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 775 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 24600 pF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+611.79 EUR
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BFP420FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFP420FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5.5V 25GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19.5dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: 4-TSFP
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1682+0.27 EUR
Mindestbestellmenge: 1682
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IRF6662TRPBF irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d
IRF6662TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6662TRPBF irf6662pbf.pdf?fileId=5546d462533600a4015355ec7edc1a5d
IRF6662TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.3A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MZ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.2A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: DIRECTFET™ MZ
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
auf Bestellung 457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
10+3.13 EUR
100+2.17 EUR
Mindestbestellmenge: 4
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TLE9350BSJXTMA1 Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4
TLE9350BSJXTMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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TLE9350BSJXTMA1 Infineon-TLE9350BSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e2a1cc08e4
TLE9350BSJXTMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
16+1.16 EUR
25+1.05 EUR
100+0.93 EUR
250+0.87 EUR
500+0.83 EUR
1000+0.8 EUR
Mindestbestellmenge: 11
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AIMZA75R008M1HXKSA1 Infineon-AIMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c26c0f0e1f
AIMZA75R008M1HXKSA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_SICMOS
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+59.7 EUR
30+39.6 EUR
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AIMBG75R027M1HXTMA1 Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2
AIMBG75R027M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+11.29 EUR
Mindestbestellmenge: 1000
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AIMBG75R027M1HXTMA1 Infineon-AIMBG75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef042d11327b2
AIMBG75R027M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V 64A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.24 EUR
10+15.4 EUR
100+13.82 EUR
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CYPD822952LQXITXUMA1 Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683
Hersteller: Infineon Technologies
Description: USB-C PC
Packaging: Tape & Reel (TR)
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
Produkt ist nicht verfügbar
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CYPD822952LQXIXQLA1 Infineon-EZ_PD_CCG8_CFP_USBC_Power_Delivery_controller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c93dda25b019505de8fdc3683
Hersteller: Infineon Technologies
Description: USB-C PC
Packaging: Tray
Package / Case: 52-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 52-QFN (5x8)
Number of I/O: 20
Produkt ist nicht verfügbar
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EVAL60UTR11WINGTOBO1 UM_KIT_CSK_BGT60UTR11AIP-Wingboard_Userguide-EN.pdf
EVAL60UTR11WINGTOBO1
Hersteller: Infineon Technologies
Description: EVAL60UTR11WINGTOBO1
Packaging: Box
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.53 EUR
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AIMCQ120R040M1TXTMA1 AIMCQ120R040M1T_v1.10_en.pdf
AIMCQ120R040M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMCQ120R040M1TXTMA1 AIMCQ120R040M1T_v1.10_en.pdf
AIMCQ120R040M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.96 EUR
10+13.22 EUR
100+11.51 EUR
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ISZ015N04NM7VATMA1 448_ISZ015N04NM7V.pdf
ISZ015N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISZ015N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.74 EUR
Mindestbestellmenge: 5000
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ISZ015N04NM7VATMA1 448_ISZ015N04NM7V.pdf
ISZ015N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISZ015N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 36µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
auf Bestellung 6894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.81 EUR
100+1.22 EUR
500+0.97 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
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CY8C20566-24PVXI
CY8C20566-24PVXI
Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 2K SRAM 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.41 EUR
10+6.44 EUR
30+5.86 EUR
120+5.34 EUR
270+5.12 EUR
510+4.98 EUR
1020+4.85 EUR
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EVINVHPD2SICFS0108TOBO2
Hersteller: Infineon Technologies
Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS01MR08A8MA2
Embedded: No
auf Bestellung 3 Stücke:
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Anzahl Preis
1+8974.94 EUR
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EVINVHPD2SICFS0212TOBO1
Hersteller: Infineon Technologies
Description: OTHER
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FS02MR12A8MA2
Embedded: No
Produkt ist nicht verfügbar
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CY7C1354DV25-200BZI
CY7C1354DV25-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.2 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1470BV25-200BZI CY7C1470%2C72%2C74BV25.pdf
CY7C1470BV25-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1312BV18-200BZI CY7C1310%2C12%2C14%2C1914BV18.pdf
CY7C1312BV18-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1415AV18-200BZI CY7C1411%2C13%2C15%2C26AV18.pdf
CY7C1415AV18-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1414BV18-200BZI CY7C1412%2C14BV18.pdf
CY7C1414BV18-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1470BV33-200BZI download
CY7C1470BV33-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1380DV33-200BZI Infineon-CY7C1380DV33_CY7C1382DV33_18-MBIT_(512_K_X_36_1_M_X_18)_PIPELINED_SRAM_Datasheet-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec1488335f9
CY7C1380DV33-200BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDPBHBC10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SDPBHBC10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.41 EUR
10+11.54 EUR
25+11.19 EUR
50+10.92 EUR
100+10.65 EUR
338+10.2 EUR
Mindestbestellmenge: 2
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IQFH61N06NM5ATMA1 Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2
IQFH61N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
Produkt ist nicht verfügbar
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IQFH61N06NM5ATMA1 Infineon-IQFH61N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e28fe8005b2
IQFH61N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 510A (Tc)
Rds On (Max) @ Id, Vgs: 0.61mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 247µA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18100 pF @ 30 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.91 EUR
10+7.38 EUR
100+5.53 EUR
Mindestbestellmenge: 2
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CY8C4126LDEHVS114AQLA1 Infineon-CY8C41x5_CY8C41x6_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c956a0a470195817712a75d7a
CY8C4126LDEHVS114AQLA1
Hersteller: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 33
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY25200K-ZXC004A
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMZC140R019M2HXKSA1 infineon-imzc140r019m2h-datasheet-en.pdf
IMZC140R019M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZC140R019M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.17 EUR
30+16.81 EUR
120+14.54 EUR
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IMZC140R024M2HXKSA1 infineon-imzc140r024m2h-datasheet-en.pdf
IMZC140R024M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZC140R024M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.51 EUR
30+14.36 EUR
120+12.35 EUR
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EB2ED24103D1BCSPTOBO1
EB2ED24103D1BCSPTOBO1
Hersteller: Infineon Technologies
Description: EB 2ED2410 3D 1BCSP
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED2410-EM
auf Bestellung 3 Stücke:
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Anzahl Preis
1+163.54 EUR
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DD800S17K3_B2 DD800S17K3_B2.pdf
Hersteller: Infineon Technologies
Description: DIODE MODULE GEN PURP 1700V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 800 A
Produkt ist nicht verfügbar
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IMZA120R012M2HXKSA1 infineon-imza120r012m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fde0d5f5dc5
IMZA120R012M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA120R012M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.75 EUR
30+22.85 EUR
120+21.95 EUR
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IM66D130MV01XTMA1
IM66D130MV01XTMA1
Hersteller: Infineon Technologies
Description: IM66D130MV01XTMA1
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
Produkt ist nicht verfügbar
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IM66D130MV01XTMA1
IM66D130MV01XTMA1
Hersteller: Infineon Technologies
Description: IM66D130MV01XTMA1
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.118" L x 0.079" W (3.00mm x 2.00mm)
Sensitivity: -37dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 66dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.039" (0.98mm)
Voltage - Rated: 1.8 V
Current - Supply: 640 µA
Voltage Range: 1.6 V ~ 3.465 V
Frequency Range: 35 Hz
Produkt ist nicht verfügbar
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KITIM68D121JV01FLEXTOBO1 infineon-xensiv-sensor-solutions-product-selection-guide-en.pdf
KITIM68D121JV01FLEXTOBO1
Hersteller: Infineon Technologies
Description: KITIM68D121JV01FLEXTOBO1
Packaging: Box
Function: MEMS Omnidirectional Microphones
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM68D121JV01
Secondary Attributes: Analog Output
Embedded: No
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+159.6 EUR
10+125 EUR
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IMDQ75R008M1HXUMA1 Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4
IMDQ75R008M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMDQ75R008M1HXUMA1 Infineon-IMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b6132fe9921f4
IMDQ75R008M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
auf Bestellung 523 Stücke:
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Anzahl Preis
1+47.34 EUR
10+36.9 EUR
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ISC025N06LM6ATMA1 Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf
ISC025N06LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Produkt ist nicht verfügbar
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IRAMS06UP60A-2 IRAMS06UP60A.pdf
IRAMS06UP60A-2
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 6A 23-PWRSIP MOD
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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S26KS256SDGBHB030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS256SDGBHB030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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7GA830343H0
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C29866-24AXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C29866-24AXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 12x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 64
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+15.78 EUR
Mindestbestellmenge: 1500
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CY8C4146AZE-S275T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146AZE-S275T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CYAT81689-100AS71Z CYAT8168x.pdf
CYAT81689-100AS71Z
Hersteller: Infineon Technologies
Description: TrueTouch
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AIMBG75R025M2HXTMA1
AIMBG75R025M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMBG75R025M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
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AIMBG75R025M2HXTMA1
AIMBG75R025M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMBG75R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 36.7A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.1mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IMTA65R033M2HXTMA1 Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735
IMTA65R033M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IMTA65R033M2HXTMA1 Infineon-IMTA65R033M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb2d51436735
IMTA65R033M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 4-PowerLSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-LHSOF-4-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 1791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.35 EUR
10+10.51 EUR
100+7.78 EUR
500+7.66 EUR
Mindestbestellmenge: 2
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TLE9018DQKXUMA1 infineon-tle9018dqk-datasheet-en.pdf
TLE9018DQKXUMA1
Hersteller: Infineon Technologies
Description: BATTERYMANAGEMENT_ICS
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9018DQKXUMA1 infineon-tle9018dqk-datasheet-en.pdf
TLE9018DQKXUMA1
Hersteller: Infineon Technologies
Description: BATTERYMANAGEMENT_ICS
Packaging: Cut Tape (CT)
Package / Case: 64-LQFP Exposed Pad
Number of Cells: 18
Mounting Type: Surface Mount
Function: Multi-Function Controller
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-LQFP-64-28
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.21 EUR
10+11.86 EUR
25+11.03 EUR
100+10.11 EUR
250+9.67 EUR
Mindestbestellmenge: 2
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TLE9189QVWSXUMA1 Infineon-TLE9189QV-DataSheet-v01_00-EN.pdf
TLE9189QVWSXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.2V ~ 36V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BGSX33MA16E6327XTSA1
Hersteller: Infineon Technologies
Description: ANTENNA DEVICES
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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