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S26HL512TFPBHB000 S26HL512TFPBHB000 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHM003 S26HL512TFPBHM003 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHM013 S26HL512TFPBHM013 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S28HL512TFPBHM013 S28HL512TFPBHM013 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S28HL512TFPBHB010 S28HL512TFPBHB010 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHB010 S26HL512TFPBHB010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S28HL512TFPBHM010 S28HL512TFPBHM010 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHM000 S26HL512TFPBHM000 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHM010 S26HL512TFPBHM010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S28HL01GTFPBHI033 S28HL01GTFPBHI033 Infineon Technologies S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf Description: IC FLASH 1GBIT SPI/OCTAL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALISO2H823V25BTOBO1 EVALISO2H823V25BTOBO1 Infineon Technologies Infineon-ISOFACE_EVAL_ISO2H823V2.5_B_digital_output_evaluation_board_manual_-UserManual-v01_00-EN.pdf?fileId=8ac78c8c869190210186ff42c21c09ea Description: EVAL BOARD FOR ISO2H823V2.5
Embedded: No
Secondary Attributes: On-Board LEDs
Primary Attributes: 8-Channel (Octal)
Utilized IC / Part: ISO2H823V2.5
Contents: Board(s)
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
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1+93.84 EUR
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ICE5QR1680BG1XUMA1 ICE5QR1680BG1XUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: ICE5QR1680BG1XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BG1XUMA1 ICE5QR1680BG1XUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: ICE5QR1680BG1XUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
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6+2.94 EUR
10+2.16 EUR
25+1.96 EUR
100+1.75 EUR
250+1.65 EUR
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REF5QR1680BG127W1TOBO1 REF5QR1680BG127W1TOBO1 Infineon Technologies #!?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: REF5QR1680BG127W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 2.17A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR1680BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 27W
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EVAL2EP130RPRSICTOBO1 EVAL2EP130RPRSICTOBO1 Infineon Technologies UG-2024-03_EVAL-2EP130R-PR-SiC_v1.00_2024-02-26_en.pdf Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
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IGLD65R080D2AUMA1 IGLD65R080D2AUMA1 Infineon Technologies infineon-igld65r080d2-datasheet-en.pdf Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Produkt ist nicht verfügbar
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IGLD65R080D2AUMA1 IGLD65R080D2AUMA1 Infineon Technologies infineon-igld65r080d2-datasheet-en.pdf Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
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2+9.1 EUR
10+6.07 EUR
100+4.36 EUR
500+3.98 EUR
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AUIRB24427STR AUIRB24427STR Infineon Technologies auirb24427s.pdf?fileId=5546d462533600a4015355a8894c135e Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
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IKQ40N120CT2XKSA1 IKQ40N120CT2XKSA1 Infineon Technologies Infineon-IKQ40N120CT2-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015c0be021fb0a7d Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
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FF300R12ME4PB11BPSA1 FF300R12ME4PB11BPSA1 Infineon Technologies Infineon-FF300R12ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ee9413f0154 Description: IGBT MOD 1200V 600A 20MW
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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NBT2000A8K0T4USON8XTMA5 NBT2000A8K0T4USON8XTMA5 Infineon Technologies infineon-optiga-authenticate-nbt-dse-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50 Description: NBT2000A8K0T4USON8XTMA5
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
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NBT2000A8K0T4USON8XTMA5 NBT2000A8K0T4USON8XTMA5 Infineon Technologies infineon-optiga-authenticate-nbt-dse-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50 Description: NBT2000A8K0T4USON8XTMA5
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
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9+2.01 EUR
11+1.72 EUR
25+1.62 EUR
100+1.49 EUR
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ESD175B1W01005E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Tape & Reel (TR)
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ESD175B1W01005E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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CY6264-70SNC CY6264-70SNC Infineon Technologies CY6264%20.pdf Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY6264-70SNXC CY6264-70SNXC Infineon Technologies CY6264%20.pdf Description: IC SRAM 64KBIT PARALLEL 28SOIC
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 28-SOIC
Memory Format: SRAM
Produkt ist nicht verfügbar
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IRF540ZLPBF IRF540ZLPBF Infineon Technologies irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6 Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7311TR IRF7311TR Infineon Technologies IRF7311.pdf Description: MOSFET 2N-CH 20V 6.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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CY8C4147AZQT415XQSA1 CY8C4147AZQT415XQSA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Number of I/O: 53
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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PSC3M5EDLHQ1XQLA1 Infineon Technologies Description: INDUSTRIAL-PSOC C3
Number of I/O: 39
Supplier Device Package: 64-VQFN (8x8)
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 18x12b SAR
Core Processor: ARM® Cortex®-M33F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 199MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tray
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CYT2CL7BXAQ0AZSGSHQLA1 Infineon Technologies Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
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CYT2CL7BXAQ0AZSGSTHUYA1 Infineon Technologies Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
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FS1150R08A8P3CHPSA1 Infineon Technologies infineon-fs1150r08a8p3c-datasheet-en.pdf Description: IGBT MOD 750V 600A AGHDG2XT-7611
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1 kW
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 600 A
Supplier Device Package: AG-HDG2XT-7611
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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841000037001 Infineon Technologies Description: IC MCU 32BIT 100LQFP
DigiKey Programmable: Not Verified
Packaging: Tray
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CYT4BB5CXBQ1AEEGSHQLA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BB5CXBQ1AEEGSTHUYA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BB7CXBQ1AEEGSHQLA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BB7CXBQ1AEEGSTHUYA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BB8CXBQ1AEEGSHQLA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BB8CXBQ1AEEGSTHUYA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BBBCXBQ1BZEGSTXUMA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BBBCXBQ1BZEGSXQLA1 Infineon Technologies Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BF8CXDQ0AEEGSHQLA1 Infineon Technologies infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BF8CXDQ0AEEGSTHUYA1 Infineon Technologies infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BFBCXDQ0BZEGSTXUMA1 Infineon Technologies infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BFBCXDQ0BZEGSXQLA1 Infineon Technologies infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BFCCXDQ0BZEGSXQLA1 Infineon Technologies infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BFCCXDQ0BZEGSTXUMA1 Infineon Technologies infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CY8C20424-12LQXIT CY8C20424-12LQXIT Infineon Technologies Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6 Description: IC MCU 8BIT 8KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
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GS61008TMRXUSA1 GS61008TMRXUSA1 Infineon Technologies Infineon-GS61008T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160eb52522a Description: GS61008T-MR
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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250+6.49 EUR
500+6.34 EUR
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GS61008TMRXUSA1 GS61008TMRXUSA1 Infineon Technologies Infineon-GS61008T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160eb52522a Description: GS61008T-MR
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
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IMZA65R015M2HXKSA1 IMZA65R015M2HXKSA1 Infineon Technologies infineon-imza65r015m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO247-4-8
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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IMZA65R060M2HXKSA1 IMZA65R060M2HXKSA1 Infineon Technologies IMZA65R060M2HXKSA1.pdf Description: IMZA65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMZA65R033M2HXKSA1 IMZA65R033M2HXKSA1 Infineon Technologies IMZA65R033M2HXKSA1.pdf Description: IMZA65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
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IGC025S08S1XTMA1 IGC025S08S1XTMA1 Infineon Technologies infineon-igc025s08s1-datasheet-en.pdf Description: GANFET N-CH 80V 23A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
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IGC025S08S1XTMA1 IGC025S08S1XTMA1 Infineon Technologies infineon-igc025s08s1-datasheet-en.pdf Description: GANFET N-CH 80V 23A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
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CY2309ZXI-1HT CY2309ZXI-1HT Infineon Technologies Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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100+17.28 EUR
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TLE9189QUWXUMA1 TLE9189QUWXUMA1 Infineon Technologies Infineon-TLE9189QxW-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194cc5d1b7f2916 Description: TLE9189QUWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE9189QUWXUMA1 TLE9189QUWXUMA1 Infineon Technologies Infineon-TLE9189QxW-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194cc5d1b7f2916 Description: TLE9189QUWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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10+5.24 EUR
25+4.83 EUR
100+4.37 EUR
250+4.16 EUR
500+4.03 EUR
1000+3.92 EUR
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TLE9009DQUXUMA1 TLE9009DQUXUMA1 Infineon Technologies Infineon-TLE9009DQU-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d01920088e7510c69 Description: TLE9009DQUXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Number of Cells: 9
Mounting Type: Surface Mount
Function: Multi-Function Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-TQFP-48-9
Fault Protection: Over Current
Grade: Automotive
Qualification: AEC-Q100
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S26HL512TFPBHB000 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHB000
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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S26HL512TFPBHM003 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM003
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S26HL512TFPBHM013 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S28HL512TFPBHM013 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHM013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S28HL512TFPBHB010 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHB010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S28HL512TFPBHM010 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL512TFPBHM010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/OCTL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHM000 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM000
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26HL512TFPBHM010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHM010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S28HL01GTFPBHI033 S28H%28L%2CS%2901GT_256T_512T_RevA_7-8-19.pdf
S28HL01GTFPBHI033
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT SPI/OCTAL 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 6.5 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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EVALISO2H823V25BTOBO1 Infineon-ISOFACE_EVAL_ISO2H823V2.5_B_digital_output_evaluation_board_manual_-UserManual-v01_00-EN.pdf?fileId=8ac78c8c869190210186ff42c21c09ea
EVALISO2H823V25BTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ISO2H823V2.5
Embedded: No
Secondary Attributes: On-Board LEDs
Primary Attributes: 8-Channel (Octal)
Utilized IC / Part: ISO2H823V2.5
Contents: Board(s)
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+93.84 EUR
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ICE5QR1680BG1XUMA1 Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4
ICE5QR1680BG1XUMA1
Hersteller: Infineon Technologies
Description: ICE5QR1680BG1XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
Produkt ist nicht verfügbar
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ICE5QR1680BG1XUMA1 Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4
ICE5QR1680BG1XUMA1
Hersteller: Infineon Technologies
Description: ICE5QR1680BG1XUMA1
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 16 V
Control Features: Soft Start
Power (Watts): 50 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.94 EUR
10+2.16 EUR
25+1.96 EUR
100+1.75 EUR
250+1.65 EUR
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REF5QR1680BG127W1TOBO1 #!?fileId=8ac78c8c919c9f9d019233514f1f43d4
REF5QR1680BG127W1TOBO1
Hersteller: Infineon Technologies
Description: REF5QR1680BG127W1TOBO1
Packaging: Box
Voltage - Output: 5V, 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 2.17A, 200mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5QR1680BG-1
Main Purpose: AC/DC Converter
Outputs and Type: 2 Non-Isolated Outputs
Power - Output: 27W
auf Bestellung 5 Stücke:
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AnzahlPreis
1+198.69 EUR
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EVAL2EP130RPRSICTOBO1 UG-2024-03_EVAL-2EP130R-PR-SiC_v1.00_2024-02-26_en.pdf
EVAL2EP130RPRSICTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+134.08 EUR
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IGLD65R080D2AUMA1 infineon-igld65r080d2-datasheet-en.pdf
IGLD65R080D2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Produkt ist nicht verfügbar
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IGLD65R080D2AUMA1 infineon-igld65r080d2-datasheet-en.pdf
IGLD65R080D2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 18A 8LDFN
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.5A
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
auf Bestellung 2102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.1 EUR
10+6.07 EUR
100+4.36 EUR
500+3.98 EUR
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AUIRB24427STR auirb24427s.pdf?fileId=5546d462533600a4015355a8894c135e
AUIRB24427STR
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
auf Bestellung 6992 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
135+3.39 EUR
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IKQ40N120CT2XKSA1 Infineon-IKQ40N120CT2-DS-v02_02-EN.pdf?fileId=5546d4625bd71aa0015c0be021fb0a7d
IKQ40N120CT2XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 1708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
60+7.53 EUR
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FF300R12ME4PB11BPSA1 Infineon-FF300R12ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ee9413f0154
FF300R12ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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NBT2000A8K0T4USON8XTMA5 infineon-optiga-authenticate-nbt-dse-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50
NBT2000A8K0T4USON8XTMA5
Hersteller: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
Produkt ist nicht verfügbar
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NBT2000A8K0T4USON8XTMA5 infineon-optiga-authenticate-nbt-dse-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50
NBT2000A8K0T4USON8XTMA5
Hersteller: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B
Supplier Device Package: PG-USON-8-8
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.01 EUR
11+1.72 EUR
25+1.62 EUR
100+1.49 EUR
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ESD175B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD175B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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CY6264-70SNC CY6264%20.pdf
CY6264-70SNC
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY6264-70SNXC CY6264%20.pdf
CY6264-70SNXC
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 70 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 70ns
Supplier Device Package: 28-SOIC
Memory Format: SRAM
Produkt ist nicht verfügbar
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IRF540ZLPBF irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6
IRF540ZLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7311TR IRF7311.pdf
IRF7311TR
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 6.6A 8SO
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4147AZQT415XQSA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4147AZQT415XQSA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Number of I/O: 53
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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PSC3M5EDLHQ1XQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Number of I/O: 39
Supplier Device Package: 64-VQFN (8x8)
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 18x12b SAR
Core Processor: ARM® Cortex®-M33F
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 64K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 199MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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CYT2CL7BXAQ0AZSGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
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CYT2CL7BXAQ0AZSGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
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FS1150R08A8P3CHPSA1 infineon-fs1150r08a8p3c-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 600A AGHDG2XT-7611
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 1 kW
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 600 A
Supplier Device Package: AG-HDG2XT-7611
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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841000037001
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 100LQFP
DigiKey Programmable: Not Verified
Packaging: Tray
Produkt ist nicht verfügbar
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CYT4BB5CXBQ1AEEGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BB5CXBQ1AEEGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BB7CXBQ1AEEGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BB7CXBQ1AEEGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BB8CXBQ1AEEGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BB8CXBQ1AEEGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT4BBBCXBQ1BZEGSTXUMA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT4BBBCXBQ1BZEGSXQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
Produkt ist nicht verfügbar
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CYT4BF8CXDQ0AEEGSHQLA1 infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
Produkt ist nicht verfügbar
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CYT4BF8CXDQ0AEEGSTHUYA1 infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BFBCXDQ0BZEGSTXUMA1 infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
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CYT4BFBCXDQ0BZEGSXQLA1 infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BFCCXDQ0BZEGSXQLA1 infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tray
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CYT4BFCCXDQ0BZEGSTXUMA1 infineon-traveo-t2g-automotive-microcontroller-cyt4bf-32-bit-arm-cortex-m7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY HIGH-END
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C20424-12LQXIT Infineon-CY8C20224_CY8C20324_CY8C20424_CY8C20524_CAPSENSE_PSOC_PROGRAMMABLE_SYSTEM_ON_CHIP-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecae11743f6
CY8C20424-12LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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GS61008TMRXUSA1 Infineon-GS61008T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160eb52522a
GS61008TMRXUSA1
Hersteller: Infineon Technologies
Description: GS61008T-MR
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+6.49 EUR
500+6.34 EUR
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GS61008TMRXUSA1 Infineon-GS61008T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160eb52522a
GS61008TMRXUSA1
Hersteller: Infineon Technologies
Description: GS61008T-MR
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1217 Stücke:
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AnzahlPreis
2+14.06 EUR
10+9.65 EUR
100+7.76 EUR
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IMZA65R015M2HXKSA1 infineon-imza65r015m2h-datasheet-en.pdf
IMZA65R015M2HXKSA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO247-4-8
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Power Dissipation (Max): 341W (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 708 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+25.27 EUR
30+15.67 EUR
120+14.09 EUR
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IMZA65R060M2HXKSA1 IMZA65R060M2HXKSA1.pdf
IMZA65R060M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.3 EUR
30+7.17 EUR
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IMZA65R033M2HXKSA1 IMZA65R033M2HXKSA1.pdf
IMZA65R033M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
auf Bestellung 110 Stücke:
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AnzahlPreis
2+16.07 EUR
30+9.58 EUR
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IGC025S08S1XTMA1 infineon-igc025s08s1-datasheet-en.pdf
IGC025S08S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 80V 23A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
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IGC025S08S1XTMA1 infineon-igc025s08s1-datasheet-en.pdf
IGC025S08S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 80V 23A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.03 EUR
10+5.3 EUR
100+3.74 EUR
500+3.07 EUR
1000+2.86 EUR
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CY2309ZXI-1HT Infineon-CY2305_CY2309_Low_Cost_3.3_V_Zero_Delay_Buffer-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe422931ae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2309ZXI-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 2149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+25.22 EUR
10+20.01 EUR
25+18.71 EUR
100+17.28 EUR
250+16.6 EUR
500+16.19 EUR
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TLE9189QUWXUMA1 Infineon-TLE9189QxW-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194cc5d1b7f2916
TLE9189QUWXUMA1
Hersteller: Infineon Technologies
Description: TLE9189QUWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9189QUWXUMA1 Infineon-TLE9189QxW-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194cc5d1b7f2916
TLE9189QUWXUMA1
Hersteller: Infineon Technologies
Description: TLE9189QUWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.9 EUR
10+5.24 EUR
25+4.83 EUR
100+4.37 EUR
250+4.16 EUR
500+4.03 EUR
1000+3.92 EUR
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TLE9009DQUXUMA1 Infineon-TLE9009DQU-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d01920088e7510c69
TLE9009DQUXUMA1
Hersteller: Infineon Technologies
Description: TLE9009DQUXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Number of Cells: 9
Mounting Type: Surface Mount
Function: Multi-Function Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-TQFP-48-9
Fault Protection: Over Current
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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