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EVALS26HL512TTOBO1 EVALS26HL512TTOBO1 Infineon Technologies EVALS26HL512TTOBO1.pdf Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
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CYPD1120-35FNXIT CYPD1120-35FNXIT Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 35WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 35-WLCSP (3.23x2.10)
Core Processor: ARM® Cortex®-M0
Applications: USB Type C
Program Memory Type: FLASH (32kB)
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Interface: I2C, SPI, UART/USART, USB
Mounting Type: Surface Mount
Package / Case: 35-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4675GATMA1 TLE4675GATMA1 Infineon Technologies Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46 Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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IMW65R075M2HXKSA1 IMW65R075M2HXKSA1 Infineon Technologies infineon-imw65r075m2h-datasheet-en.pdf Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
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S29GL256S11TFVV10 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Memory Organization: 256Mb (16M x 16)
Access Time: 110 ns
Memory Interface: CFI
Write Cycle Time - Word, Page: 60ns
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
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AUIRFR2905Z AUIRFR2905Z Infineon Technologies auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
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TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
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TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
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26+0.83 EUR
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
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CYPD8125-48LDXIT CYPD8125-48LDXIT Infineon Technologies Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
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TLD11731STDEVALTOBO1 TLD11731STDEVALTOBO1 Infineon Technologies infineon-tld1173-1std-eval-ug-usermanual-en.pdf Description: TLD1173-1STD_EVAL
Outputs and Type: 1 Non-Isolated Output
Utilized IC / Part: TLD1173
Current - Output / Channel: 400mA
Contents: Board(s)
Voltage - Input: 8V ~ 21V
Voltage - Output: 6.5V ~ 18.5V
Packaging: Box
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IRG8P08N120KDPBF IRG8P08N120KDPBF Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 89 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 15 A
Gate Charge: 45 nC
Test Condition: 600V, 5A, 47Ohm, 15V
Switching Energy: 300µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 20ns/160ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Supplier Device Package: PG-WHITFN-10-1
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 167W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 10-PowerWDFN
Packaging: Tape & Reel (TR)
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 10-PowerWDFN
Supplier Device Package: PG-WHITFN-10-1
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 167W (Tc)
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IPI072N10N3GXKSA1 IPI072N10N3GXKSA1 Infineon Technologies Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405 Description: MOSFET N-CH 100V 80A TO262-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
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CY8C3866LTI-207 CY8C3866LTI-207 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 64KB FLASH 68QFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x20b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 2K x 8
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IRF3205ZPBFXKMA1 Infineon Technologies Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
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IRFB4332PBFXKMA1 Infineon Technologies Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1 Infineon Technologies IMZC120R053M2HXKSA1.pdf Description: SICFET N-CH 1200V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-17
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Supplier Device Package: LG-MLGA-72-5
Current - Output (Max): 160A
Voltage - Input (Max): 16V
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 125°C
Type: Non-Isolated PoL Module
Mounting Type: Surface Mount
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Package / Case: 72-LGA Module
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Number of Outputs: 1
Power (Watts): 480 W
Control Features: Enable, Active High
Voltage - Output 1: 0.225 ~ 3V
Voltage - Input (Min): 4.25V
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Package / Case: 72-LGA Module
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Power (Watts): 480 W
Control Features: Enable, Active High
Voltage - Output 1: 0.225 ~ 3V
Voltage - Input (Min): 4.25V
Supplier Device Package: LG-MLGA-72-5
Current - Output (Max): 160A
Voltage - Input (Max): 16V
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 125°C
Type: Non-Isolated PoL Module
Mounting Type: Surface Mount
Number of Outputs: 1
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IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
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IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
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S29GL01GS11TFV020 S29GL01GS11TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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FZ675R65KE4NPSA1 FZ675R65KE4NPSA1 Infineon Technologies Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01 Description: IGBT MODULE 6.5KV 675A 2.4MW
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2.4 mW
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Current - Collector (Ic) (Max): 675 A
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
Operating Temperature: -50°C ~ 135°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
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IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IRFB7434GPBF IRFB7434GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
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CY8C4148AZES595TXUMA1 CY8C4148AZES595TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZS AUIRL1404ZS Infineon Technologies INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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FS1000R08A7P3BHPSA1 Infineon Technologies infineon-fs1000r08a7p3b-datasheet-en.pdf Description: IGBT MOD 750V 600A AGHDG2XT-7611
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 750 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 600 A
Supplier Device Package: AG-HDG2XT-7611
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IPT034N15NM6ATMA1 IPT034N15NM6ATMA1 Infineon Technologies infineon-ipt034n15nm6-datasheet-en.pdf Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 179µA
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPT034N15NM6ATMA1 IPT034N15NM6ATMA1 Infineon Technologies infineon-ipt034n15nm6-datasheet-en.pdf Description: TRENCH >=100V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 179µA
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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CYPM1111-40LQXI CYPM1111-40LQXI Infineon Technologies Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
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100+3.71 EUR
490+3.4 EUR
980+3.31 EUR
1470+3.25 EUR
2940+3.18 EUR
5390+3.13 EUR
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CYPM1111-40LQXIT CYPM1111-40LQXIT Infineon Technologies Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Description: IC MCU 32BIT 128KB FLASH 40QFN
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 12K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 17
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
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IPF011N08NM6ATMA1 IPF011N08NM6ATMA1 Infineon Technologies infineon-ipf011n08nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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RMBABYCRYSOFT1 RMBABYCRYSOFT1 Infineon Technologies Description: SOFTWARE
Packaging: Electronic Delivery
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IGLT65R055B2AUMA1 IGLT65R055B2AUMA1 Infineon Technologies infineon-iglt65r055b2-pds-datasheet-en.pdf Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
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IGLT65R055B2AUMA1 IGLT65R055B2AUMA1 Infineon Technologies infineon-iglt65r055b2-pds-datasheet-en.pdf Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
auf Bestellung 2682 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.8 EUR
10+15.09 EUR
100+11.85 EUR
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IRS9103AXTSA1 IRS9103AXTSA1 Infineon Technologies Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3 Description: IRS9103AXTSA1
Qualification: AEC-Q100
Current - Supply: 4 mA
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-WFWLB-9-21
Voltage - Supply: 3.1V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: 9-WFBGA, WLBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IRS9103AXTSA1 IRS9103AXTSA1 Infineon Technologies Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3 Description: IRS9103AXTSA1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply: 4 mA
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-WFWLB-9-21
Voltage - Supply: 3.1V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: 9-WFBGA, WLBGA
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.12 EUR
10+7.72 EUR
25+7.12 EUR
100+6.46 EUR
250+6.19 EUR
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BCP51H6327XTSA1 BCP51H6327XTSA1 Infineon Technologies Infineon-BCP51_BCP52_BCP53-DS-v01_01-en.pdf?fileId=db3a304314dca38901156ad4194521c9 Description: TRANS PNP 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 105000 Stücke:
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1771+0.31 EUR
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PVA3054NPBF PVA3054NPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
On-State Resistance (Max): 160 Ohms
Voltage - Load: 0 V ~ 300 V
Supplier Device Package: 8-DIP Modified
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 50 mA
Termination Style: PC Pin
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
auf Bestellung 759 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.96 EUR
10+11.55 EUR
25+11.03 EUR
50+10.66 EUR
100+10.29 EUR
250+9.83 EUR
500+9.48 EUR
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IMT44R025M2HXTMA2 IMT44R025M2HXTMA2 Infineon Technologies infineon-imt44r025m2h-datasheet-en.pdf Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IMT44R025M2HXTMA2 IMT44R025M2HXTMA2 Infineon Technologies infineon-imt44r025m2h-datasheet-en.pdf Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IRLR3802PBF IRLR3802PBF Infineon Technologies IRSDS11016-1.pdf?t.download=true&u=5oefqw Description: IRLR3802 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
auf Bestellung 2596 Stücke:
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429+1.29 EUR
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EVALTDA3880618VOUTTOBO1 EVALTDA3880618VOUTTOBO1 Infineon Technologies Infineon-Evalaution_board_TDA38806_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3b887585f05 Description: EVAL BOARD FOR TDA38806
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Utilized IC / Part: TDA38806
Regulator Topology: Buck
Contents: Board(s)
Current - Output: 6A
Voltage - Input: 12V
Voltage - Output: 1.8V
Packaging: Box
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+106.31 EUR
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EVALTDA388065VOUTTOBO1 EVALTDA388065VOUTTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_TDA38807_5Vout-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231e79c90cfe Description: EVAL BOARD FOR TDA38806
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Utilized IC / Part: TDA38806
Regulator Topology: Buck
Contents: Board(s)
Current - Output: 6A
Voltage - Input: 12V
Voltage - Output: 5V
Packaging: Box
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+106.31 EUR
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EVALTDA3880633VOUTTOBO1 EVALTDA3880633VOUTTOBO1 Infineon Technologies Infineon-TDA38806-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190ba4e6fe45b05 Description: EVAL BOARD FOR TDA38806
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Utilized IC / Part: TDA38806
Regulator Topology: Buck
Contents: Board(s)
Current - Output: 6A
Voltage - Input: 12V
Voltage - Output: 3.3V
Packaging: Box
auf Bestellung 1 Stücke:
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1+106.31 EUR
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IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
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99+5.58 EUR
Mindestbestellmenge: 99 Stücke
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IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVALS26HL512TTOBO1 EVALS26HL512TTOBO1.pdf
EVALS26HL512TTOBO1
Hersteller: Infineon Technologies
Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.83 EUR
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CYPD1120-35FNXIT
CYPD1120-35FNXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 31
Supplier Device Package: 35-WLCSP (3.23x2.10)
Core Processor: ARM® Cortex®-M0
Applications: USB Type C
Program Memory Type: FLASH (32kB)
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Interface: I2C, SPI, UART/USART, USB
Mounting Type: Surface Mount
Package / Case: 35-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE4675GATMA1 Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46
TLE4675GATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 6940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
167+3.26 EUR
Mindestbestellmenge: 167 Stücke
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IMW65R075M2HXKSA1 infineon-imw65r075m2h-datasheet-en.pdf
IMW65R075M2HXKSA1
Hersteller: Infineon Technologies
Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.76 EUR
30+7.29 EUR
120+6.09 EUR
Mindestbestellmenge: 2 Stücke
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S29GL256S11TFVV10 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
Hersteller: Infineon Technologies
Description: PNOR
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Packaging: Tray
Supplier Device Package: 56-TSOP
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Mbit
Memory Organization: 256Mb (16M x 16)
Access Time: 110 ns
Memory Interface: CFI
Write Cycle Time - Word, Page: 60ns
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Hersteller: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Hersteller: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.72 EUR
10+2.76 EUR
25+2.51 EUR
100+2.24 EUR
250+2.12 EUR
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AUIRFR2905Z auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
AUIRFR2905Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE496048MS2XTSA1
Hersteller: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.56 EUR
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TLE496048MS2XTSA1
Hersteller: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1.02 EUR
24+0.89 EUR
26+0.83 EUR
100+0.75 EUR
250+0.69 EUR
500+0.65 EUR
1000+0.62 EUR
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
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3+8.27 EUR
5+7.41 EUR
10+7.1 EUR
25+6.72 EUR
50+6.46 EUR
100+6.22 EUR
500+5.75 EUR
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Hersteller: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Produkt ist nicht verfügbar
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Hersteller: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.27 EUR
5+10.15 EUR
10+9.72 EUR
25+9.22 EUR
50+8.89 EUR
100+8.57 EUR
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CYPD8125-48LDXIT Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t
CYPD8125-48LDXIT
Hersteller: Infineon Technologies
Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
auf Bestellung 2332 Stücke:
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3+10.03 EUR
10+7.66 EUR
25+7.07 EUR
100+6.41 EUR
250+6.14 EUR
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TLD11731STDEVALTOBO1 infineon-tld1173-1std-eval-ug-usermanual-en.pdf
TLD11731STDEVALTOBO1
Hersteller: Infineon Technologies
Description: TLD1173-1STD_EVAL
Outputs and Type: 1 Non-Isolated Output
Utilized IC / Part: TLD1173
Current - Output / Channel: 400mA
Contents: Board(s)
Voltage - Input: 8V ~ 21V
Voltage - Output: 6.5V ~ 18.5V
Packaging: Box
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IRG8P08N120KDPBF IRG8x08N120KD.pdf
IRG8P08N120KDPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 15A TO-247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 89 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 15 A
Gate Charge: 45 nC
Test Condition: 600V, 5A, 47Ohm, 15V
Switching Energy: 300µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 20ns/160ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Supplier Device Package: PG-WHITFN-10-1
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 167W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 10-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 10-PowerWDFN
Supplier Device Package: PG-WHITFN-10-1
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 167W (Tc)
Produkt ist nicht verfügbar
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IPI072N10N3GXKSA1 Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405
IPI072N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO262-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
auf Bestellung 500 Stücke:
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178+3.06 EUR
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CY8C3866LTI-207 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866LTI-207
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 38
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x20b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 2K x 8
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
auf Bestellung 135 Stücke:
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5+4.69 EUR
50+2.28 EUR
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IRFB4332PBFXKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
auf Bestellung 586 Stücke:
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3+9.9 EUR
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1.pdf
IMZC120R053M2HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-17
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Power Dissipation (Max): 182W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 366 Stücke:
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2+16.89 EUR
30+9.95 EUR
120+8.43 EUR
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE MODULE
Supplier Device Package: LG-MLGA-72-5
Current - Output (Max): 160A
Voltage - Input (Max): 16V
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 125°C
Type: Non-Isolated PoL Module
Mounting Type: Surface Mount
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Package / Case: 72-LGA Module
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Number of Outputs: 1
Power (Watts): 480 W
Control Features: Enable, Active High
Voltage - Output 1: 0.225 ~ 3V
Voltage - Input (Min): 4.25V
auf Bestellung 2000 Stücke:
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500+32.75 EUR
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE MODULE
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Package / Case: 72-LGA Module
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Power (Watts): 480 W
Control Features: Enable, Active High
Voltage - Output 1: 0.225 ~ 3V
Voltage - Input (Min): 4.25V
Supplier Device Package: LG-MLGA-72-5
Current - Output (Max): 160A
Voltage - Input (Max): 16V
Applications: ITE (Commercial)
Operating Temperature: -40°C ~ 125°C
Type: Non-Isolated PoL Module
Mounting Type: Surface Mount
Number of Outputs: 1
auf Bestellung 2546 Stücke:
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1+37.93 EUR
5+36.52 EUR
10+35.93 EUR
25+35.15 EUR
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100+34.02 EUR
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-HDSOP-22-1
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Power Dissipation (Max): 937W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 722 Stücke:
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AnzahlPrivatkunde
1+60.43 EUR
10+48.94 EUR
25+46.08 EUR
100+44.21 EUR
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Power Dissipation (Max): 211W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 620 Stücke:
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2+17.72 EUR
10+12.19 EUR
100+9.92 EUR
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S29GL01GS11TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS11TFV020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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1+29.27 EUR
10+27.17 EUR
25+26.32 EUR
91+25.13 EUR
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FZ675R65KE4NPSA1 Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01
FZ675R65KE4NPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 6.5KV 675A 2.4MW
Current - Collector Cutoff (Max): 5 mA
Power - Max: 2.4 mW
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Current - Collector (Ic) (Max): 675 A
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
Operating Temperature: -50°C ~ 135°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
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1+2708.52 EUR
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IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
auf Bestellung 32457 Stücke:
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AnzahlPrivatkunde
98+5.62 EUR
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IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB7434GPBF IR_PartNumberingSystem.pdf
IRFB7434GPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
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AnzahlPrivatkunde
2+265.18 EUR
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CY8C4148AZES595TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4148AZES595TXUMA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
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AnzahlPrivatkunde
136+4.03 EUR
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AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRL1404ZS INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw
AUIRL1404ZS
Hersteller: Infineon Technologies
Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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156+3.55 EUR
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FS1000R08A7P3BHPSA1 infineon-fs1000r08a7p3b-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 600A AGHDG2XT-7611
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 750 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 600 A
Supplier Device Package: AG-HDG2XT-7611
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 5 Stücke:
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IPT034N15NM6ATMA1 infineon-ipt034n15nm6-datasheet-en.pdf
IPT034N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 179µA
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT034N15NM6ATMA1 infineon-ipt034n15nm6-datasheet-en.pdf
IPT034N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 4V @ 179µA
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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10+6.07 EUR
100+4.33 EUR
500+4.11 EUR
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CYPM1111-40LQXI Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
CYPM1111-40LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
auf Bestellung 9639 Stücke:
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4+5.99 EUR
10+4.5 EUR
25+4.12 EUR
100+3.71 EUR
490+3.4 EUR
980+3.31 EUR
1470+3.25 EUR
2940+3.18 EUR
5390+3.13 EUR
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CYPM1111-40LQXIT Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
CYPM1111-40LQXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 12K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 17
Supplier Device Package: 40-QFN (6x6)
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Produkt ist nicht verfügbar
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IPF011N08NM6ATMA1 infineon-ipf011n08nm6-datasheet-en.pdf
IPF011N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 988 Stücke:
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2+13.91 EUR
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RMBABYCRYSOFT1
RMBABYCRYSOFT1
Hersteller: Infineon Technologies
Description: SOFTWARE
Packaging: Electronic Delivery
Produkt ist nicht verfügbar
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IGLT65R055B2AUMA1 infineon-iglt65r055b2-pds-datasheet-en.pdf
IGLT65R055B2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
auf Bestellung 1800 Stücke:
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1800+9.69 EUR
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IGLT65R055B2AUMA1 infineon-iglt65r055b2-pds-datasheet-en.pdf
IGLT65R055B2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
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1+21.8 EUR
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IRS9103AXTSA1 Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3
IRS9103AXTSA1
Hersteller: Infineon Technologies
Description: IRS9103AXTSA1
Qualification: AEC-Q100
Current - Supply: 4 mA
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-WFWLB-9-21
Voltage - Supply: 3.1V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: 9-WFBGA, WLBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRS9103AXTSA1 Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3
IRS9103AXTSA1
Hersteller: Infineon Technologies
Description: IRS9103AXTSA1
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply: 4 mA
Number of Channels: 1
Grade: Automotive
Supplier Device Package: PG-WFWLB-9-21
Voltage - Supply: 3.1V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Type: Laser Diode Driver
Mounting Type: Surface Mount
Package / Case: 9-WFBGA, WLBGA
auf Bestellung 610 Stücke:
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3+10.12 EUR
10+7.72 EUR
25+7.12 EUR
100+6.46 EUR
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BCP51H6327XTSA1 Infineon-BCP51_BCP52_BCP53-DS-v01_01-en.pdf?fileId=db3a304314dca38901156ad4194521c9
BCP51H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 105000 Stücke:
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PVA3054NPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
On-State Resistance (Max): 160 Ohms
Voltage - Load: 0 V ~ 300 V
Supplier Device Package: 8-DIP Modified
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 50 mA
Termination Style: PC Pin
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Through Hole
Output Type: AC, DC
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Packaging: Tube
auf Bestellung 759 Stücke:
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2+12.96 EUR
10+11.55 EUR
25+11.03 EUR
50+10.66 EUR
100+10.29 EUR
250+9.83 EUR
500+9.48 EUR
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IMT44R025M2HXTMA2 infineon-imt44r025m2h-datasheet-en.pdf
IMT44R025M2HXTMA2
Hersteller: Infineon Technologies
Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IMT44R025M2HXTMA2 infineon-imt44r025m2h-datasheet-en.pdf
IMT44R025M2HXTMA2
Hersteller: Infineon Technologies
Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IRLR3802PBF IRSDS11016-1.pdf?t.download=true&u=5oefqw
IRLR3802PBF
Hersteller: Infineon Technologies
Description: IRLR3802 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
auf Bestellung 2596 Stücke:
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429+1.29 EUR
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EVALTDA3880618VOUTTOBO1 Infineon-Evalaution_board_TDA38806_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3b887585f05
EVALTDA3880618VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Utilized IC / Part: TDA38806
Regulator Topology: Buck
Contents: Board(s)
Current - Output: 6A
Voltage - Input: 12V
Voltage - Output: 1.8V
Packaging: Box
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+106.31 EUR
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EVALTDA388065VOUTTOBO1 Infineon-Evaluation_board_EVAL_TDA38807_5Vout-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231e79c90cfe
EVALTDA388065VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Utilized IC / Part: TDA38806
Regulator Topology: Buck
Contents: Board(s)
Current - Output: 6A
Voltage - Input: 12V
Voltage - Output: 5V
Packaging: Box
auf Bestellung 1 Stücke:
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EVALTDA3880633VOUTTOBO1 Infineon-TDA38806-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190ba4e6fe45b05
EVALTDA3880633VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Down
Utilized IC / Part: TDA38806
Regulator Topology: Buck
Contents: Board(s)
Current - Output: 6A
Voltage - Input: 12V
Voltage - Output: 3.3V
Packaging: Box
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+106.31 EUR
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IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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