Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124701) > Seite 770 nach 2079
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| ND89N12KXPSA1 | Infineon Technologies |
 Description: DIODE STANDARD 1200V 89APackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 89A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A Current - Reverse Leakage @ Vr: 20 mA @ 1200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IMZA120R040M2HXKSA1 | Infineon Technologies |
Description: IMZA120R040M2HXKSA1 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V Power Dissipation (Max): 218W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 5.5mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V |
auf Bestellung 345 Stücke: Lieferzeit 10-14 Tag (e) |
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ICE184EMXUMA1 | Infineon Technologies |
Description: ICE184EMXUMA1 Packaging: Tape & Reel (TR) Package / Case: 27-SMD Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 25kHz ~ 150kHz Internal Switch(s): No Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V Supplier Device Package: PG-DSO-27-1 Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 20 V Control Features: Soft Start |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ICE184EMXUMA1 | Infineon Technologies |
Description: ICE184EMXUMA1 Packaging: Cut Tape (CT) Package / Case: 27-SMD Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 25kHz ~ 150kHz Internal Switch(s): No Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V Supplier Device Package: PG-DSO-27-1 Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 20 V Control Features: Soft Start |
auf Bestellung 999 Stücke: Lieferzeit 10-14 Tag (e) |
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ICE186EMXUMA1 | Infineon Technologies |
Description: ICE186EMXUMA1 Packaging: Tape & Reel (TR) Package / Case: 27-SMD Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 25kHz ~ 150kHz Internal Switch(s): No Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V Supplier Device Package: PG-DSO-27-1 Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 20 V Control Features: Soft Start |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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ICE186EMXUMA1 | Infineon Technologies |
Description: ICE186EMXUMA1 Packaging: Cut Tape (CT) Package / Case: 27-SMD Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 25kHz ~ 150kHz Internal Switch(s): No Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V Supplier Device Package: PG-DSO-27-1 Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 20 V Control Features: Soft Start |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFP460PBF | Infineon Technologies |
Description: MOSFET N-CH 500V 20A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 280W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRF1404ZSPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 180A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
auf Bestellung 1465 Stücke: Lieferzeit 10-14 Tag (e) |
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FS17MR12W2M1HB11ABPSA2 | Infineon Technologies |
Description: FS17MR12W2M1HB11ABPSA2 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Three Phase Inverter) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 20mA |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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SDT06S60 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 6A PGTO2202Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XDPE19283B0000XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER Packaging: Tape & Reel (TR) Package / Case: 40-VFQFN Exposed Pad Voltage - Output: 0.25V ~ 2.8V Mounting Type: Surface Mount Number of Outputs: 8 Applications: Controller, AMD Supplier Device Package: PG-VQFN-40-13 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XDPE19283B0000XUMA1 | Infineon Technologies |
Description: IFX PRIMARION CNTRLLER Packaging: Cut Tape (CT) Package / Case: 40-VFQFN Exposed Pad Voltage - Output: 0.25V ~ 2.8V Mounting Type: Surface Mount Number of Outputs: 8 Applications: Controller, AMD Supplier Device Package: PG-VQFN-40-13 |
auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
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DEMOIMRBMSCTRLV1TOBO1 | Infineon Technologies |
Description: DEMO_IMR_BMSCTRL_V1 Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Primary Attributes: Isolated Secondary Attributes: I2C/SPI Interface(s) Embedded: Yes, MCU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DEMOIMRBMSPWRV1TOBO1 | Infineon Technologies |
Description: DEMO_IMR_BMSPWR_V1 Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Primary Attributes: Isolated Secondary Attributes: SPI Interface(s) Embedded: Yes, MCU |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD50N06S4L08ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2268 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW12G65C5FKSA1 | Infineon Technologies |
Description: DIODE SIC 650V 12A PGTO247341 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 360pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPL60R140CFD7AUMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Bulk Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Supplier Device Package: PG-VSON-4 |
auf Bestellung 3526 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD130N10NF2SATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD130N10NF2SATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V |
auf Bestellung 1793 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N100TFKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1000V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 33ns/535ns Switching Energy: 3.8mJ Test Condition: 600V, 30A, 16Ohm, 15V Gate Charge: 217 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1000 V Current - Collector Pulsed (Icm): 90 A Power - Max: 412 W |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| CG10148AF | Infineon Technologies |
Description: IC FRAM Packaging: Tray Memory Format: FRAM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1350 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CG10146AFT | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AIMDQ75R060M1HXUMA1 | Infineon Technologies |
Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMDQ75R060M1HXUMA1 | Infineon Technologies |
Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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AIMDQ75R016M2HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 12.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AIMDQ75R016M2HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 750V PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 12.3mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 633 Stücke: Lieferzeit 10-14 Tag (e) |
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CHL8328-04CRT | Infineon Technologies |
Description: IC REG CTRLR DDR 2OUT 56VQFN Packaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 3.3V Operating Temperature: -20°C ~ 85°C (TA) Applications: Controller, DDR, Intel VR12, AMD SVI, PVI Supplier Device Package: PG-VQFN-56-901 |
Produkt ist nicht verfügbar |
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IGB08N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 20A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/149ns Switching Energy: 460µJ (on), 410µJ (off) Test Condition: 600V, 8A, 20Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 87 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGB08N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 20A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/149ns Switching Energy: 460µJ (on), 410µJ (off) Test Condition: 600V, 8A, 20Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 87 W |
auf Bestellung 872 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG6B330UDPBF | Infineon Technologies |
Description: IGBT TRENCH 330V 70A TO-220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.76V @ 15V, 120A Supplier Device Package: TO-220AB IGBT Type: Trench Td (on/off) @ 25°C: 47ns/176ns Test Condition: 196V, 25A, 10Ohm Gate Charge: 85 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 330 V Power - Max: 160 W |
Produkt ist nicht verfügbar |
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IKWH50N75EH7XKSA1 | Infineon Technologies |
Description: INDUSTRY 14 Packaging: Tube |
auf Bestellung 214 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB085N15NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 73µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPB085N15NM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V Power Dissipation (Max): 3.8W (Ta), 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 73µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V |
auf Bestellung 163 Stücke: Lieferzeit 10-14 Tag (e) |
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TC4D9XP20MF500MCABKXUMA1 | Infineon Technologies |
Description: AURIX 3G-ACEE Packaging: Cut Tape (CT) Package / Case: 672-FBGA Mounting Type: Surface Mount Speed: 500MHz Program Memory Size: 20MB (20M x 8) RAM Size: 10M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: TriCore™ Data Converters: A/D 64 SAR Core Size: 32-Bit12 Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: CANbus, C2Slb, I2C, SCI, SPI Supplier Device Package: PG-F2HBGA-436 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 168 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C1318KV18-250BZI | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA Packaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, DDR II Clock Frequency: 250 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 1M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 272 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CYUSB2317BF104AXIXQMA1 | Infineon Technologies |
Description: CYUSB2317BF104AXIXQMA1 Packaging: Tray Package / Case: 104-VFLGA Exposed Pad Function: Controller Interface: I2C, SPI, USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.62V ~ 3.63V Protocol: USB Standards: USB 2.0 Supplier Device Package: 104-LGA (8x8) |
auf Bestellung 747 Stücke: Lieferzeit 10-14 Tag (e) |
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CYUSB2318BF104AXIXQMA1 | Infineon Technologies |
Description: CYUSB2318BF104AXIXQMA1 Packaging: Tray Package / Case: 104-VFLGA Exposed Pad Function: Controller Interface: I2C, SPI, USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.62V ~ 3.63V Protocol: USB Standards: USB 2.0 Supplier Device Package: 104-LGA (8x8) |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| BGA6L1BN6E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP TSNP-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRF540ZLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 36A TO262 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
auf Bestellung 17445 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC008N06LM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 221W (Tc) Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
auf Bestellung 4831 Stücke: Lieferzeit 10-14 Tag (e) |
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EVALAUDIOMA2304DNSBTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR MA2304DNS Packaging: Bulk Output Type: 2-Channel (Stereo) Amplifier Type: Class D Contents: Board(s) Voltage - Supply: 10V ~ 20V Max Output Power x Channels @ Load: 37W x 2 @ 4Ohm Utilized IC / Part: MA2304DNS |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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KITPSE84EVALTOBO1 | Infineon Technologies |
Description: PSOC EDGE E84 EVAL KIT Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), Cable(s), LCD, Accessories Core Processor: ARM® Cortex®-M33, Cortex®-M55 Utilized IC / Part: PSE846GPS2DBZC4 |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE493DW3B6B1HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8 Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE493DW3B6B2HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8 Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLE493DW3B6B3HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8 Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPAW60R360P7SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 9A TO220 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V Power Dissipation (Max): 22W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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REF65WHFZVSLPPAG2TOBO1 | Infineon Technologies |
Description: OTHERS-WCS Packaging: Box Function: USB Type-C Power Delivery (PD) Type: Power Management Contents: Board(s) Utilized IC / Part: CYPAP212A1-14SXI Embedded: No |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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CY3295-MTK | Infineon Technologies |
Description: OTHER PL90 Packaging: Tray Mounting Type: Fixed Contents: Board(s) Utilized IC / Part: CY3295 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY3295-TTBRIDGE | Infineon Technologies |
Description: OTHER PL90 Packaging: Tray Function: Touch Screen Controller Type: Interface Contents: Board(s) Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GS10DHSS30 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGA Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9BF168MPMC-GNE2 | Infineon Technologies |
Description: IC MCU 32BT 1.03125MB FLSH 80QFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 1.03125MB (1.03125M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TJ) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 16x12b SAR; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Number of I/O: 63 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9BF168NPMC-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 1.03125MB 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 1.03125MB (1.03125M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TJ) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 80 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9BF168NPMC-GNE2 | Infineon Technologies |
Description: IC MCU 32B 1.03125MB FLSH 100QFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 1.03125MB (1.03125M x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 125°C (TJ) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 24x12b SAR; D/A 2x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-LQFP (14x14) Number of I/O: 80 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TLF35585QVS02XUMA2 | Infineon Technologies |
Description: OPTIREG PMIC Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Applications: Automotive Systems Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1889 Stücke: Lieferzeit 10-14 Tag (e) |
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TLF35585QVS02XUMA1 | Infineon Technologies |
Description: OPTIREG PMIC Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2453 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLF35585QVS02BOARDTOBO1 | Infineon Technologies |
Description: APS_OTHER Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: TLF35585QVS02 Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CYUSB230268LTXSXQLA1 | Infineon Technologies |
Description: USB-DATA AUTOMOTIVE Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: GPIO, I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 2.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (8x8) Number of I/O: 16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CYUSB230268LTXSTXUMA1 | Infineon Technologies |
Description: USB-DATA AUTOMOTIVE Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: GPIO, I2C RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 3V ~ 3.6V Controller Series: CYUSB Program Memory Type: ROM (32kB) Applications: USB 2.0 Hub Controller Core Processor: ARM® Cortex®-M0 Supplier Device Package: 68-QFN (8x8) Number of I/O: 16 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AIHD06N60RATMA2 | Infineon Technologies |
Description: DISCRETE SWITCHES Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IKFW40N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 60A HSIP247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 106 W |
auf Bestellung 3540 Stücke: Lieferzeit 10-14 Tag (e) |
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| ND89N12KXPSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMZA120R040M2HXKSA1 |
|
Hersteller: Infineon Technologies
Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.16 EUR |
| 30+ | 10.79 EUR |
| 120+ | 9.17 EUR |
| ICE184EMXUMA1 |
|
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ICE184EMXUMA1 |
|
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.08 EUR |
| 10+ | 5.34 EUR |
| 25+ | 4.91 EUR |
| 100+ | 4.44 EUR |
| 250+ | 4.2 EUR |
| 500+ | 4.18 EUR |
| ICE186EMXUMA1 |
|
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 5.05 EUR |
| ICE186EMXUMA1 |
|
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.85 EUR |
| 10+ | 6.75 EUR |
| 25+ | 6.21 EUR |
| 100+ | 5.63 EUR |
| 250+ | 5.37 EUR |
| IRFP460PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF1404ZSPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 279+ | 1.96 EUR |
| FS17MR12W2M1HB11ABPSA2 |
|
Hersteller: Infineon Technologies
Description: FS17MR12W2M1HB11ABPSA2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Description: FS17MR12W2M1HB11ABPSA2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 174.91 EUR |
| SDT06S60 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Description: DIODE SIL CARB 600V 6A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XDPE19283B0000XUMA1 |
|
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| XDPE19283B0000XUMA1 |
|
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.02 EUR |
| 10+ | 8.46 EUR |
| 25+ | 7.82 EUR |
| 100+ | 7.12 EUR |
| DEMOIMRBMSCTRLV1TOBO1 |
|
Hersteller: Infineon Technologies
Description: DEMO_IMR_BMSCTRL_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: I2C/SPI Interface(s)
Embedded: Yes, MCU
Description: DEMO_IMR_BMSCTRL_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: I2C/SPI Interface(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DEMOIMRBMSPWRV1TOBO1 |
|
Hersteller: Infineon Technologies
Description: DEMO_IMR_BMSPWR_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU
Description: DEMO_IMR_BMSPWR_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD50N06S4L08ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 567+ | 0.98 EUR |
| IDW12G65C5FKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 12A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Description: DIODE SIC 650V 12A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPL60R140CFD7AUMA1 |
|
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Supplier Device Package: PG-VSON-4
Description: HIGH POWER_NEW
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Supplier Device Package: PG-VSON-4
auf Bestellung 3526 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 168+ | 3.28 EUR |
| IPD130N10NF2SATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPD130N10NF2SATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.2 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.98 EUR |
| IGW30N100TFKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 53.4 EUR |
| CG10148AF |
Produkt ist nicht verfügbar
Mindestbestellmenge: 1350 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIMDQ75R060M1HXUMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 750+ | 6.15 EUR |
| AIMDQ75R060M1HXUMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.33 EUR |
| 10+ | 9.75 EUR |
| 100+ | 7.53 EUR |
| AIMDQ75R016M2HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIMDQ75R016M2HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 633 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.63 EUR |
| 10+ | 28.39 EUR |
| 100+ | 25.67 EUR |
| CHL8328-04CRT |
|
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGB08N120S7ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGB08N120S7ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
auf Bestellung 872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.95 EUR |
| 10+ | 3.84 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.12 EUR |
| IRG6B330UDPBF |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 330V 70A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.76V @ 15V, 120A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 47ns/176ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 160 W
Description: IGBT TRENCH 330V 70A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.76V @ 15V, 120A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 47ns/176ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKWH50N75EH7XKSA1 |
|
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.65 EUR |
| 10+ | 7.79 EUR |
| IPB085N15NM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB085N15NM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
auf Bestellung 163 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.99 EUR |
| 10+ | 3.88 EUR |
| 100+ | 2.69 EUR |
| TC4D9XP20MF500MCABKXUMA1 |
Hersteller: Infineon Technologies
Description: AURIX 3G-ACEE
Packaging: Cut Tape (CT)
Package / Case: 672-FBGA
Mounting Type: Surface Mount
Speed: 500MHz
Program Memory Size: 20MB (20M x 8)
RAM Size: 10M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 64 SAR
Core Size: 32-Bit12
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: CANbus, C2Slb, I2C, SCI, SPI
Supplier Device Package: PG-F2HBGA-436
Grade: Automotive
Qualification: AEC-Q100
Description: AURIX 3G-ACEE
Packaging: Cut Tape (CT)
Package / Case: 672-FBGA
Mounting Type: Surface Mount
Speed: 500MHz
Program Memory Size: 20MB (20M x 8)
RAM Size: 10M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 64 SAR
Core Size: 32-Bit12
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: CANbus, C2Slb, I2C, SCI, SPI
Supplier Device Package: PG-F2HBGA-436
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 203.22 EUR |
| 10+ | 170.8 EUR |
| 25+ | 162.71 EUR |
| 100+ | 153.82 EUR |
| CY7C1318KV18-250BZI |
|
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 272 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYUSB2317BF104AXIXQMA1 |
Hersteller: Infineon Technologies
Description: CYUSB2317BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
Description: CYUSB2317BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.38 EUR |
| 10+ | 25.76 EUR |
| 25+ | 24.11 EUR |
| 100+ | 22.3 EUR |
| 348+ | 21.17 EUR |
| 696+ | 20.69 EUR |
| CYUSB2318BF104AXIXQMA1 |
Hersteller: Infineon Technologies
Description: CYUSB2318BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
Description: CYUSB2318BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.09 EUR |
| 10+ | 27.19 EUR |
| 25+ | 25.45 EUR |
| 100+ | 23.56 EUR |
| 348+ | 22.38 EUR |
| 696+ | 21.88 EUR |
| BGA6L1BN6E6327XTSA1 |
|
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRF540ZLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 17445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 306+ | 1.8 EUR |
| ISC008N06LM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
auf Bestellung 4831 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.07 EUR |
| 10+ | 4.57 EUR |
| 25+ | 4.19 EUR |
| 100+ | 3.77 EUR |
| 250+ | 3.57 EUR |
| 500+ | 3.45 EUR |
| 1000+ | 3.36 EUR |
| 2500+ | 3.25 EUR |
| EVALAUDIOMA2304DNSBTOBO1 |
|
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA2304DNS
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 37W x 2 @ 4Ohm
Utilized IC / Part: MA2304DNS
Description: EVAL BOARD FOR MA2304DNS
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 37W x 2 @ 4Ohm
Utilized IC / Part: MA2304DNS
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 478.7 EUR |
| KITPSE84EVALTOBO1 |
|
Hersteller: Infineon Technologies
Description: PSOC EDGE E84 EVAL KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, Accessories
Core Processor: ARM® Cortex®-M33, Cortex®-M55
Utilized IC / Part: PSE846GPS2DBZC4
Description: PSOC EDGE E84 EVAL KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, Accessories
Core Processor: ARM® Cortex®-M33, Cortex®-M55
Utilized IC / Part: PSE846GPS2DBZC4
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 504.83 EUR |
| TLE493DW3B6B1HTSA1 |
|
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 8+ | 2.93 EUR |
| 10+ | 2.78 EUR |
| 25+ | 2.62 EUR |
| 50+ | 2.51 EUR |
| 100+ | 2.4 EUR |
| 500+ | 2.19 EUR |
| 1000+ | 2.12 EUR |
| TLE493DW3B6B2HTSA1 |
|
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE493DW3B6B3HTSA1 |
|
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 8+ | 2.93 EUR |
| 10+ | 2.78 EUR |
| 25+ | 2.62 EUR |
| 50+ | 2.51 EUR |
| 100+ | 2.4 EUR |
| 500+ | 2.19 EUR |
| 1000+ | 2.12 EUR |
| IPAW60R360P7SXKSA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
Description: MOSFET N-CH 650V 9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 390+ | 1.42 EUR |
| REF65WHFZVSLPPAG2TOBO1 |
|
Hersteller: Infineon Technologies
Description: OTHERS-WCS
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CYPAP212A1-14SXI
Embedded: No
Description: OTHERS-WCS
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CYPAP212A1-14SXI
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 562.85 EUR |
| CY3295-MTK |
Hersteller: Infineon Technologies
Description: OTHER PL90
Packaging: Tray
Mounting Type: Fixed
Contents: Board(s)
Utilized IC / Part: CY3295
Description: OTHER PL90
Packaging: Tray
Mounting Type: Fixed
Contents: Board(s)
Utilized IC / Part: CY3295
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY3295-TTBRIDGE |
Hersteller: Infineon Technologies
Description: OTHER PL90
Packaging: Tray
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Embedded: No
Description: OTHER PL90
Packaging: Tray
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S29GL01GS10DHSS30 |
|
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY9BF168MPMC-GNE2 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BT 1.03125MB FLSH 80QFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 1.03125MB FLSH 80QFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1190 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY9BF168NPMC-G-MNE2 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.03125MB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1.03125MB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY9BF168NPMC-GNE2 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.03125MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Description: IC MCU 32B 1.03125MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TLF35585QVS02XUMA2 |
|
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive Systems
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive Systems
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1889 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.14 EUR |
| 10+ | 10.14 EUR |
| 25+ | 9.39 EUR |
| 100+ | 8.57 EUR |
| 250+ | 8.18 EUR |
| 500+ | 7.94 EUR |
| 1000+ | 7.75 EUR |
| TLF35585QVS02XUMA1 |
|
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.31 EUR |
| 10+ | 12.69 EUR |
| 25+ | 11.78 EUR |
| 100+ | 10.78 EUR |
| 250+ | 10.57 EUR |
| TLF35585QVS02BOARDTOBO1 |
Hersteller: Infineon Technologies
Description: APS_OTHER
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLF35585QVS02
Embedded: No
Description: APS_OTHER
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLF35585QVS02
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYUSB230268LTXSXQLA1 |
|
Hersteller: Infineon Technologies
Description: USB-DATA AUTOMOTIVE
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
Description: USB-DATA AUTOMOTIVE
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYUSB230268LTXSTXUMA1 |
|
Hersteller: Infineon Technologies
Description: USB-DATA AUTOMOTIVE
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
Description: USB-DATA AUTOMOTIVE
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AIHD06N60RATMA2 |
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IKFW40N65ES5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
auf Bestellung 3540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 62+ | 8.63 EUR |