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IMZC140R038M2HXKSA1 IMZC140R038M2HXKSA1 Infineon Technologies infineon-imzc140r038m2h-datasheet-en.pdf Description: IMZC140R038M2HXKSA1
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 1.4 kV
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-17
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 20.4A, 18V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
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2+16.79 EUR
30+10.03 EUR
120+8.56 EUR
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IPDQ65R018CM8XTMA1 IPDQ65R018CM8XTMA1 Infineon Technologies Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98 Description: IPDQ65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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IPDQ65R018CM8XTMA1 IPDQ65R018CM8XTMA1 Infineon Technologies Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98 Description: IPDQ65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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EVALXDP700TOBO1 EVALXDP700TOBO1 Infineon Technologies Infineon-UM012553_evaluation_board_eval_XDP700-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0854929341c Description: EVALXDP700TOBO1
Contents: Board(s)
Packaging: Box
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IMZC120R040M2HXKSA1 IMZC120R040M2HXKSA1 Infineon Technologies IMZC120R040M2HXKSA1.pdf Description: SICFET N-CH 1200V 48A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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30+10.66 EUR
120+9.09 EUR
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IRL7833PBF IRL7833PBF Infineon Technologies irl7833pbf.pdf?fileId=5546d462533600a4015356600d71257b Description: MOSFET N-CH 30V 150A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 15 V
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CYW89570DCFFBGT Infineon Technologies Description: IC RF TXRX BLE
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
auf Bestellung 1500 Stücke:
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CYW89570DCFFBGT Infineon Technologies Description: IC RF TXRX BLE
Packaging: Cut Tape (CT)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
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1+27.44 EUR
10+23.9 EUR
25+22.68 EUR
100+20.99 EUR
250+19.98 EUR
500+19.97 EUR
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IMBG65R040M2HXTMA1 IMBG65R040M2HXTMA1 Infineon Technologies infineon-imbg65r040m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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IMBG65R040M2HXTMA1 IMBG65R040M2HXTMA1 Infineon Technologies infineon-imbg65r040m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 1906 Stücke:
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2+12.71 EUR
10+8.66 EUR
100+6.76 EUR
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IKP08N65F5XKSA1 IKP08N65F5XKSA1 Infineon Technologies Infineon-IKP08N65F5-DS-v02_01-EN.pdf?fileId=db3a30433af5291e013af9bac1de5da9 Description: IGBT
Packaging: Bulk
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BFP540FESDH6327XTSA1 BFP540FESDH6327XTSA1 Infineon Technologies Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922 Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
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964+0.47 EUR
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IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 Infineon Technologies Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 Infineon Technologies Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a Description: MOSFET_(20V 40V)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
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IAUCN10S7N074ATMA1 IAUCN10S7N074ATMA1 Infineon Technologies infineon-iaucn10s7n074-datasheet-en.pdf Description: IAUCN10S7N074ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7N074ATMA1 IAUCN10S7N074ATMA1 Infineon Technologies infineon-iaucn10s7n074-datasheet-en.pdf Description: IAUCN10S7N074ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
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6+3.27 EUR
10+2.1 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.09 EUR
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CY7S1061GE30-10BVXI CY7S1061GE30-10BVXI Infineon Technologies Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
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CY7C1059H30-10ZSXIT CY7C1059H30-10ZSXIT Infineon Technologies Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 1M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Produkt ist nicht verfügbar
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CY7C1059H30-10ZSXI CY7C1059H30-10ZSXI Infineon Technologies Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Memory Organization: 1M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
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CY7C10612G30-10ZSXIT CY7C10612G30-10ZSXIT Infineon Technologies Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
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CY7C1061G30-10BVJXIT CY7C1061G30-10BVJXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
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CY7C1061GN30-10BVJXI CY7C1061GN30-10BVJXI Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
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CY7C1061GN30-10BVJXIT CY7C1061GN30-10BVJXIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1061GN30-10ZSXIT CY7C1061GN30-10ZSXIT Infineon Technologies CY7C1061GN30.pdf Description: IC SRAM 16MBIT PAR 54TSOP II
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
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CY7C1069GN30-10ZSXIT CY7C1069GN30-10ZSXIT Infineon Technologies Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 54TSOP
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
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CY7C1061G30-10BV1XET CY7C1061G30-10BV1XET Infineon Technologies Infineon-CY7C1061G_Automotive_16-Mbit_(1_M_words_x_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed74055586f&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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CY7C1061G30-10BVXIT CY7C1061G30-10BVXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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CY7C1069G30-10BVXIT CY7C1069G30-10BVXIT Infineon Technologies Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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CY7C1061GE30-10BV1XIT CY7C1061GE30-10BV1XIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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CY7C1061GE30-10BVXIT CY7C1061GE30-10BVXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1061GN30-10ZXIT CY7C1061GN30-10ZXIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
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CY7C1069GE30-10ZSXI CY7C1069GE30-10ZSXI Infineon Technologies Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Description: IC SRAM 16MBIT PARALLEL 54TSOP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
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CY7C1061GE30-10ZSXIT CY7C1061GE30-10ZSXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Memory Size: 16Mbit
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CY7C1061GE30-10ZXIT CY7C1061GE30-10ZXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
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CY7C1061GE30-10BV1XI CY7C1061GE30-10BV1XI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
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CY7C1069GN30-10BVXI CY7C1069GN30-10BVXI Infineon Technologies Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
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IPB057N15NM6ATMA1 IPB057N15NM6ATMA1 Infineon Technologies DS_IPB057N15NM6_en.pdf Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB057N15NM6ATMA1 IPB057N15NM6ATMA1 Infineon Technologies DS_IPB057N15NM6_en.pdf Description: TRENCH >=100V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
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10+3.34 EUR
100+2.32 EUR
500+2 EUR
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CY8C4045FNIT452TXTMA1 Infineon Technologies Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: HMI-GROWTH PSOC4
Packaging: Tube
Produkt ist nicht verfügbar
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PVA1354NSPBF PVA1354NSPBF Infineon Technologies pva13n.pdf?fileId=5546d462533600a401535683928a291e Description: SSR RELAY SPST-NO 375MA 0-100V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-SMD
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 375 mA
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2+13.97 EUR
10+12.45 EUR
25+11.89 EUR
50+11.48 EUR
100+11.09 EUR
250+10.58 EUR
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IPP08CNE8N G IPP08CNE8N G Infineon Technologies IP%28B%2CI%2CP%2908CNE8N_G.pdf Description: MOSFET N-CH 85V 95A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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CY91F528RSCPMC-GSE2 CY91F528RSCPMC-GSE2 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 115
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
RAM Size: 336K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Operating Temperature: -40°C ~ 105°C (TA)
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CY91F528RSDPMC-GSE2 CY91F528RSDPMC-GSE2 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
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CY91F528RSDEQ-GSE2 Infineon Technologies Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP-EP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
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CY91F528YWCPB-GSE1 CY91F528YWCPB-GSE1 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
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S25FL256SAGBAEA03 S25FL256SAGBAEA03 Infineon Technologies Infineon-S25FL128S_S25FL256S_Military_128_Mbit_(16_Mbyte)_256_Mbit_(32_Mbyte)_3.0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7bccb7094 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CYPM1311-48LDXIT CYPM1311-48LDXIT Infineon Technologies Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
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CY3250-LED04QFN Infineon Technologies CY3250_QFN_POD_Kits.pdf Description: ICE POD DEBUG CY8CLED04
Utilized IC / Part: CY3215-DK, CY8CLED04
Accessory Type: Emulator Flex Pod Kit
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD159B1W0201E6327XTSA1 ESD159B1W0201E6327XTSA1 Infineon Technologies infineon-esd159-b1-w0201-datasheet-en.pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD159B1W0201E6327XTSA1 ESD159B1W0201E6327XTSA1 Infineon Technologies infineon-esd159-b1-w0201-datasheet-en.pdf Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 IPB020N03LF2SATMA1 Infineon Technologies infineon-ipb020n03lf2s-datasheet-en.pdf Description: IPB020N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 IPB020N03LF2SATMA1 Infineon Technologies infineon-ipb020n03lf2s-datasheet-en.pdf Description: IPB020N03LF2SATMA1
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
auf Bestellung 790 Stücke:
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4+4.42 EUR
10+2.86 EUR
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IPM018N10NM5LF2AUMA1 IPM018N10NM5LF2AUMA1 Infineon Technologies infineon-ipm018n10nm5lf2-datasheet-en.pdf Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Produkt ist nicht verfügbar
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IPM018N10NM5LF2AUMA1 IPM018N10NM5LF2AUMA1 Infineon Technologies infineon-ipm018n10nm5lf2-datasheet-en.pdf Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Produkt ist nicht verfügbar
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IPF018N10NM5LF2ATMA1 IPF018N10NM5LF2ATMA1 Infineon Technologies Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17 Description: IPF018N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Produkt ist nicht verfügbar
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IPF018N10NM5LF2ATMA1 IPF018N10NM5LF2ATMA1 Infineon Technologies Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17 Description: IPF018N10NM5LF2ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 199 Stücke:
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2+9.72 EUR
10+6.53 EUR
100+4.73 EUR
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IRFP450PBF Infineon Technologies 91233.pdf Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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TLE9185QXWV33XUMA1 TLE9185QXWV33XUMA1 Infineon Technologies Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971 Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.74 EUR
10+5.09 EUR
25+4.68 EUR
100+4.22 EUR
250+4 EUR
500+3.87 EUR
1000+3.77 EUR
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TLE9185QXWV33XUMA1 TLE9185QXWV33XUMA1 Infineon Technologies Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971 Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+3.65 EUR
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TLE9185QXWXUMA1 TLE9185QXWXUMA1 Infineon Technologies Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4 Description: BLDC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMZC140R038M2HXKSA1 infineon-imzc140r038m2h-datasheet-en.pdf
IMZC140R038M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZC140R038M2HXKSA1
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Drain to Source Voltage (Vdss): 1.4 kV
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO247-4-17
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Power Dissipation (Max): 242W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 20.4A, 18V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 130 Stücke:
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AnzahlPreis
2+16.79 EUR
30+10.03 EUR
120+8.56 EUR
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IPDQ65R018CM8XTMA1 Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98
IPDQ65R018CM8XTMA1
Hersteller: Infineon Technologies
Description: IPDQ65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R018CM8XTMA1 Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98
IPDQ65R018CM8XTMA1
Hersteller: Infineon Technologies
Description: IPDQ65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
auf Bestellung 548 Stücke:
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AnzahlPreis
1+21.38 EUR
10+14.95 EUR
100+12.29 EUR
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EVALXDP700TOBO1 Infineon-UM012553_evaluation_board_eval_XDP700-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0854929341c
EVALXDP700TOBO1
Hersteller: Infineon Technologies
Description: EVALXDP700TOBO1
Contents: Board(s)
Packaging: Box
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AnzahlPreis
1+470.11 EUR
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IMZC120R040M2HXKSA1 IMZC120R040M2HXKSA1.pdf
IMZC120R040M2HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 48A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
auf Bestellung 612 Stücke:
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AnzahlPreis
1+17.86 EUR
30+10.66 EUR
120+9.09 EUR
510+7.95 EUR
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IRL7833PBF irl7833pbf.pdf?fileId=5546d462533600a4015356600d71257b
IRL7833PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 150A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 15 V
auf Bestellung 26000 Stücke:
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229+1.96 EUR
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CYW89570DCFFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX BLE
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
auf Bestellung 1500 Stücke:
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AnzahlPreis
1500+18.23 EUR
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CYW89570DCFFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX BLE
Packaging: Cut Tape (CT)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
auf Bestellung 1500 Stücke:
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1+27.44 EUR
10+23.9 EUR
25+22.68 EUR
100+20.99 EUR
250+19.98 EUR
500+19.97 EUR
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IMBG65R040M2HXTMA1 infineon-imbg65r040m2h-datasheet-en.pdf
IMBG65R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+5.52 EUR
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IMBG65R040M2HXTMA1 infineon-imbg65r040m2h-datasheet-en.pdf
IMBG65R040M2HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 1906 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.71 EUR
10+8.66 EUR
100+6.76 EUR
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IKP08N65F5XKSA1 Infineon-IKP08N65F5-DS-v02_01-EN.pdf?fileId=db3a30433af5291e013af9bac1de5da9
IKP08N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
316+1.44 EUR
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BFP540FESDH6327XTSA1 Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922
BFP540FESDH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
auf Bestellung 11483 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
964+0.47 EUR
Mindestbestellmenge: 964 Stücke
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IAUCN04S7L028ATMA1 Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a
IAUCN04S7L028ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Produkt ist nicht verfügbar
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IAUCN04S7L028ATMA1 Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a
IAUCN04S7L028ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-33
Current - Continuous Drain (Id) @ 25°C: 100A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
Mindestbestellmenge: 9 Stücke
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IAUCN10S7N074ATMA1 infineon-iaucn10s7n074-datasheet-en.pdf
IAUCN10S7N074ATMA1
Hersteller: Infineon Technologies
Description: IAUCN10S7N074ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN10S7N074ATMA1 infineon-iaucn10s7n074-datasheet-en.pdf
IAUCN10S7N074ATMA1
Hersteller: Infineon Technologies
Description: IAUCN10S7N074ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.27 EUR
10+2.1 EUR
100+1.42 EUR
500+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 6 Stücke
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CY7S1061GE30-10BVXI Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra
CY7S1061GE30-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Produkt ist nicht verfügbar
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CY7C1059H30-10ZSXIT
CY7C1059H30-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Memory Organization: 1M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Produkt ist nicht verfügbar
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CY7C1059H30-10ZSXI
CY7C1059H30-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Memory Organization: 1M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C10612G30-10ZSXIT Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C10612G30-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1061G30-10BVJXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G30-10BVJXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY7C1061GN30-10BVJXI Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10BVJXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4800 Stücke
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CY7C1061GN30-10BVJXIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10BVJXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY7C1061GN30-10ZSXIT CY7C1061GN30.pdf
CY7C1061GN30-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Produkt ist nicht verfügbar
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CY7C1069GN30-10ZSXIT Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1069GN30-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 54TSOP
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1061G30-10BV1XET Infineon-CY7C1061G_Automotive_16-Mbit_(1_M_words_x_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed74055586f&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY7C1061G30-10BV1XET
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY7C1061G30-10BVXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G30-10BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY7C1069G30-10BVXIT Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
CY7C1069G30-10BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY7C1061GE30-10BV1XIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10BV1XIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY7C1061GE30-10BVXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY7C1061GN30-10ZXIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1069GE30-10ZSXI Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
CY7C1069GE30-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 54TSOP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 1080 Stücke
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CY7C1061GE30-10ZSXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Memory Size: 16Mbit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY7C1061GE30-10ZXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Produkt ist nicht verfügbar
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CY7C1061GE30-10BV1XI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10BV1XI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Produkt ist nicht verfügbar
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CY7C1069GN30-10BVXI Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1069GN30-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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IPB057N15NM6ATMA1 DS_IPB057N15NM6_en.pdf
IPB057N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB057N15NM6ATMA1 DS_IPB057N15NM6_en.pdf
IPB057N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
auf Bestellung 915 Stücke:
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AnzahlPreis
4+5.12 EUR
10+3.34 EUR
100+2.32 EUR
500+2 EUR
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CY8C4045FNIT452TXTMA1 Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tube
Produkt ist nicht verfügbar
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PVA1354NSPBF pva13n.pdf?fileId=5546d462533600a401535683928a291e
PVA1354NSPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-SMD
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 375 mA
auf Bestellung 316 Stücke:
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AnzahlPreis
2+13.97 EUR
10+12.45 EUR
25+11.89 EUR
50+11.48 EUR
100+11.09 EUR
250+10.58 EUR
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IPP08CNE8N G IP%28B%2CI%2CP%2908CNE8N_G.pdf
IPP08CNE8N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 95A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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CY91F528RSCPMC-GSE2 download
CY91F528RSCPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 115
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
RAM Size: 336K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Operating Temperature: -40°C ~ 105°C (TA)
Produkt ist nicht verfügbar
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CY91F528RSDPMC-GSE2 download
CY91F528RSDPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F528RSDEQ-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP-EP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F528YWCPB-GSE1 download
CY91F528YWCPB-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGBAEA03 Infineon-S25FL128S_S25FL256S_Military_128_Mbit_(16_Mbyte)_256_Mbit_(32_Mbyte)_3.0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7bccb7094
S25FL256SAGBAEA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPM1311-48LDXIT Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
CYPM1311-48LDXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3250-LED04QFN CY3250_QFN_POD_Kits.pdf
Hersteller: Infineon Technologies
Description: ICE POD DEBUG CY8CLED04
Utilized IC / Part: CY3215-DK, CY8CLED04
Accessory Type: Emulator Flex Pod Kit
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD159B1W0201E6327XTSA1 infineon-esd159-b1-w0201-datasheet-en.pdf
ESD159B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD159B1W0201E6327XTSA1 infineon-esd159-b1-w0201-datasheet-en.pdf
ESD159B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 infineon-ipb020n03lf2s-datasheet-en.pdf
IPB020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB020N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 infineon-ipb020n03lf2s-datasheet-en.pdf
IPB020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB020N03LF2SATMA1
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
auf Bestellung 790 Stücke:
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AnzahlPreis
4+4.42 EUR
10+2.86 EUR
100+1.97 EUR
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IPM018N10NM5LF2AUMA1 infineon-ipm018n10nm5lf2-datasheet-en.pdf
IPM018N10NM5LF2AUMA1
Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Produkt ist nicht verfügbar
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IPM018N10NM5LF2AUMA1 infineon-ipm018n10nm5lf2-datasheet-en.pdf
IPM018N10NM5LF2AUMA1
Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Produkt ist nicht verfügbar
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IPF018N10NM5LF2ATMA1 Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17
IPF018N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Produkt ist nicht verfügbar
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IPF018N10NM5LF2ATMA1 Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17
IPF018N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.72 EUR
10+6.53 EUR
100+4.73 EUR
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IRFP450PBF 91233.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXWV33XUMA1 Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971
TLE9185QXWV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.74 EUR
10+5.09 EUR
25+4.68 EUR
100+4.22 EUR
250+4 EUR
500+3.87 EUR
1000+3.77 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXWV33XUMA1 Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971
TLE9185QXWV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+3.65 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE9185QXWXUMA1 Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4
TLE9185QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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