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TLE9166EQEVALBOARDTOBO1 TLE9166EQEVALBOARDTOBO1 Infineon Technologies Description: TLE9166EQEVALBOARDTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9166
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
Produkt ist nicht verfügbar
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IRF8304MTRPBF IRF8304MTRPBF Infineon Technologies irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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IRF830PBF IRF830PBF Infineon Technologies irl620.pdf Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
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REFICL5102HV350WTOBO1 REFICL5102HV350WTOBO1 Infineon Technologies Description: REFICL5102HV350WTOBO1
Features: Dimmable
Packaging: Box
Voltage - Output: 56V
Voltage - Input: 249 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 6.25A
Utilized IC / Part: ICL5102HV
Outputs and Type: 1 Non-Isolated Output
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IPA50R380CEXKSA2 IPA50R380CEXKSA2 Infineon Technologies DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063 Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
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CY62157G18-55BVXA CY62157G18-55BVXA Infineon Technologies Infineon-CY62157G_AUTOMOTIVE_8-MBIT_(512K_WORDS_X_16-BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddcea085a520f Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS75R07N2E4BPSA1 FS75R07N2E4BPSA1 Infineon Technologies Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979 Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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FS75R07N2E4B11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1 Infineon Technologies ISA170230C04LMDSXTMA1.pdf Description: ISA170230C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1 Infineon Technologies ISA170230C04LMDSXTMA1.pdf Description: ISA170230C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
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BTM9020EPXUMA1 BTM9020EPXUMA1 Infineon Technologies Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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BTM9020EPXUMA1 BTM9020EPXUMA1 Infineon Technologies Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe Description: DC_MOTOR_CONTROL
Packaging: Tube
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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BTM9021EPXUMA1 BTM9021EPXUMA1 Infineon Technologies Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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BTM9021EPXUMA1 BTM9021EPXUMA1 Infineon Technologies Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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KITBTM902021TOBO1 KITBTM902021TOBO1 Infineon Technologies Infineon-BTM90xx-ArduinoShieldUserGuide-Z8F80497277-UserManual-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018fba2c5e5e17fc Description: KITBTM902021TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90xxEP
Platform: Arduino
Produkt ist nicht verfügbar
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CYPET121XQMA1 CYPET121XQMA1 Infineon Technologies Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96 Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
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31+0.58 EUR
34+0.52 EUR
100+0.46 EUR
250+0.42 EUR
780+0.41 EUR
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TDA6160-2S TDA6160-2S Infineon Technologies SIEMS02231-1.pdf?t.download=true&u=5oefqw Description: TDA6160 - MULTI-STANDARD SOUND I
Packaging: Bulk
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IRF6810STRPBF IRF6810STRPBF Infineon Technologies IRF6810STR%281%29PBF.pdf Description: MOSFET N CH 25V 16A S1
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 13 V
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IRF6810STRPBF IRF6810STRPBF Infineon Technologies IRF6810STR%281%29PBF.pdf Description: MOSFET N CH 25V 16A S1
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 13 V
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CY8C4146AZS-S255 CY8C4146AZS-S255 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4146AZS-S255T CY8C4146AZS-S255T Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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IRG8P25N120KDPBF IRG8P25N120KDPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
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SPP06N60C3XKSA1 SPP06N60C3XKSA1 Infineon Technologies Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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AIKQB200N75CP2ALSA1 AIKQB200N75CP2ALSA1 Infineon Technologies Infineon-AIKQB200N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c41a5e73f8 Description: AIKQB200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 200A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.256 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
auf Bestellung 220 Stücke:
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1+24.96 EUR
30+15.32 EUR
120+13.21 EUR
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CY8C4147LQE-S283 CY8C4147LQE-S283 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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10+10.33 EUR
25+9.59 EUR
100+8.76 EUR
490+8.14 EUR
980+7.94 EUR
1470+7.84 EUR
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BB 659C-02V H7902 BB 659C-02V H7902 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 659C-02V H7902 BB 659C-02V H7902 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB659C02VH7912XTSA1 BB659C02VH7912XTSA1 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
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IAUCN04S7L004ATMA1 IAUCN04S7L004ATMA1 Infineon Technologies Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
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IAUCN04S7L004ATMA1 IAUCN04S7L004ATMA1 Infineon Technologies Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 171 Stücke:
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IRG4PC30FPBF IRG4PC30FPBF Infineon Technologies irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2 Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG4PC30KPBF IRG4PC30KPBF Infineon Technologies irg4pc30kpbf.pdf?fileId=5546d462533600a401535643d3a122c6 Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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CY8CPROTO-040T-MS CY8CPROTO-040T-MS Infineon Technologies Description: CY8CPROTO-040T-MS
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: CY8C4046LQI-T452
auf Bestellung 2 Stücke:
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T1190N18TOFVTXPSA1 T1190N18TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T1500N14TOFVTXPSA1 T1500N14TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T1330N22TOFVTXPSA1 T1330N22TOFVTXPSA1 Infineon Technologies Infineon-T1330N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712b08a0734036 Description: SCR MODULE 2.2KV 2600A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 26500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1330 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2600 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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T930N36TOFVTXPSA1 Infineon Technologies Infineon-T930N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afb8eb8400d Description: SCR MODULE 3.6KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 930 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
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IPAN60R180CM8XKSA1 IPAN60R180CM8XKSA1 Infineon Technologies Description: IPAN60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 201 Stücke:
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IPZA60R180P7XKSA1 IPZA60R180P7XKSA1 Infineon Technologies Infineon-IPZA60R180P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016045bd6c491a3c Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 470 Stücke:
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CYTMA568-56LQI44BB Infineon Technologies CYTMA568_Summary_RevA_5-26-16.pdf Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
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CY8CTST200-24LQXI CY8CTST200-24LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 485 Stücke:
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AUIRFU4104 AUIRFU4104 Infineon Technologies AUIRF%28R%2CU%294104.pdf Description: MOSFET N-CH 40V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IQDH29NE2LM5SCATMA1 IQDH29NE2LM5SCATMA1 Infineon Technologies Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
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IQDH29NE2LM5SCATMA1 IQDH29NE2LM5SCATMA1 Infineon Technologies Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
auf Bestellung 4963 Stücke:
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3+6.02 EUR
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500+3.16 EUR
1000+2.80 EUR
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IQD016N08NM5SCATMA1 IQD016N08NM5SCATMA1 Infineon Technologies Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
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IQD016N08NM5SCATMA1 IQD016N08NM5SCATMA1 Infineon Technologies Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 4808 Stücke:
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3+8.17 EUR
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500+4.49 EUR
1000+3.87 EUR
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XE162FL20F80LRAAKXUMA1 XE162FL20F80LRAAKXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MCU 16BIT 160KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Number of I/O: 48
DigiKey Programmable: Not Verified
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SAF-XE162HM-48F80L AA SAF-XE162HM-48F80L AA Infineon Technologies XE162xM.pdf Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DEMOBOARDTLD1314ELTOBO1 DEMOBOARDTLD1314ELTOBO1 Infineon Technologies Infineon-Infineon_Basic_LED_Driver_Family_Demo_Board_20130726-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f14a0ad5b7e93 Description: DEMOBOARD TLD1314EL
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
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FS150R07N3E4BOSA1 FS150R07N3E4BOSA1 Infineon Technologies Infineon-FS150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f44ea50311f66 Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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D400N18BVFXPSA1 D400N18BVFXPSA1 Infineon Technologies D400N_1-6-06.pdf Description: DIODE STANDARD 1800V 450A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
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IR2181PBF IR2181PBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF82912HV1.4 Infineon Technologies Description: Q-SMINT SECOND GEN. MODULAR ISDN
Packaging: Bulk
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
20+24.84 EUR
Mindestbestellmenge: 20
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PEF82902FV1.1 PEF82902FV1.1 Infineon Technologies INFNS03723-1.pdf?t.download=true&u=5oefqw Description: PEF82902 - T-SMINTI SECOND GEN.
Packaging: Bulk
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
14+37.45 EUR
Mindestbestellmenge: 14
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ISA170170N04LMDSXTMA1 ISA170170N04LMDSXTMA1 Infineon Technologies Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a Description: ISA170170N04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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ISA170170N04LMDSXTMA1 ISA170170N04LMDSXTMA1 Infineon Technologies Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a Description: ISA170170N04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 470 Stücke:
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12+1.57 EUR
19+0.97 EUR
100+0.63 EUR
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IRFR4105TR IRFR4105TR Infineon Technologies irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9 Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR4105 AUIRFR4105 Infineon Technologies AUIRFR4105.pdf Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXIT CY8CMBR3108-LQXIT Infineon Technologies Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e Description: IC CAP SENSE 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 8
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: Yes
LED Driver Channels: Up to 4
DigiKey Programmable: Not Verified
auf Bestellung 4191 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.85 EUR
10+2.86 EUR
25+2.62 EUR
100+2.35 EUR
250+2.22 EUR
500+2.14 EUR
1000+2.07 EUR
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BTS700151ESPDAUGHBDTOBO1 BTS700151ESPDAUGHBDTOBO1 Infineon Technologies Description: BTS70015-1ESP DAUGHBD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Platform: Arduino
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+80.20 EUR
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TLE9166EQEVALBOARDTOBO1
TLE9166EQEVALBOARDTOBO1
Hersteller: Infineon Technologies
Description: TLE9166EQEVALBOARDTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9166
Secondary Attributes: On-Board LEDs
Embedded: Yes, MCU, 32-Bit
Produkt ist nicht verfügbar
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IRF8304MTRPBF irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d
IRF8304MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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IRF830PBF irl620.pdf
IRF830PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
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REFICL5102HV350WTOBO1
REFICL5102HV350WTOBO1
Hersteller: Infineon Technologies
Description: REFICL5102HV350WTOBO1
Features: Dimmable
Packaging: Box
Voltage - Output: 56V
Voltage - Input: 249 ~ 528 VAC
Contents: Board(s)
Current - Output / Channel: 6.25A
Utilized IC / Part: ICL5102HV
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 2 Stücke:
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Anzahl Preis
1+452.62 EUR
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IPA50R380CEXKSA2 DS_IPA50R380CE+2.2.pdf?fileId=5546d4614755559a01478bafc1846063
IPA50R380CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 6.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 29.2W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
auf Bestellung 77 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.88 EUR
Mindestbestellmenge: 77
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CY62157G18-55BVXA Infineon-CY62157G_AUTOMOTIVE_8-MBIT_(512K_WORDS_X_16-BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddcea085a520f
CY62157G18-55BVXA
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FS75R07N2E4BPSA1 Infineon-FS75R07N2E4-DS-v02_00-en_de.pdf?fileId=db3a30432f5008fe012f52f916333979
FS75R07N2E4BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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FS75R07N2E4B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
ISA170230C04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170230C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
ISA170230C04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170230C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V, 2500pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V, 19nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
Mindestbestellmenge: 8
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BTM9020EPXUMA1 Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe
BTM9020EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTM9020EPXUMA1 Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe
BTM9020EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Tube
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTM9021EPXUMA1 Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe
BTM9021EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTM9021EPXUMA1 Infineon-BTM9020EP-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93956f5001939aa0a5a646fe
BTM9021EPXUMA1
Hersteller: Infineon Technologies
Description: DC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 8.8A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 40V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: PG-TSDSO-14
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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KITBTM902021TOBO1 Infineon-BTM90xx-ArduinoShieldUserGuide-Z8F80497277-UserManual-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018fba2c5e5e17fc
KITBTM902021TOBO1
Hersteller: Infineon Technologies
Description: KITBTM902021TOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90xxEP
Platform: Arduino
Produkt ist nicht verfügbar
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CYPET121XQMA1 Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96
CYPET121XQMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
31+0.58 EUR
34+0.52 EUR
100+0.46 EUR
250+0.42 EUR
780+0.41 EUR
Mindestbestellmenge: 22
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TDA6160-2S SIEMS02231-1.pdf?t.download=true&u=5oefqw
TDA6160-2S
Hersteller: Infineon Technologies
Description: TDA6160 - MULTI-STANDARD SOUND I
Packaging: Bulk
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
172+2.84 EUR
Mindestbestellmenge: 172
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IRF6810STRPBF IRF6810STR%281%29PBF.pdf
IRF6810STRPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 25V 16A S1
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 13 V
Produkt ist nicht verfügbar
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IRF6810STRPBF IRF6810STR%281%29PBF.pdf
IRF6810STRPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 25V 16A S1
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric S1
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: DirectFET™ Isometric S1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 13 V
Produkt ist nicht verfügbar
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CY8C4146AZS-S255
CY8C4146AZS-S255
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4146AZS-S255T
CY8C4146AZS-S255T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRG8P25N120KDPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KDPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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SPP06N60C3XKSA1 Infineon-SPP06N60C3-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42e2a60496d
SPP06N60C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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AIKQB200N75CP2ALSA1 Infineon-AIKQB200N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c41a5e73f8
AIKQB200N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKQB200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 200A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 89ns/266ns
Switching Energy: 15.3mJ (on), 7mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.256 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.96 EUR
30+15.32 EUR
120+13.21 EUR
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CY8C4147LQE-S283 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQE-S283
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 4896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.32 EUR
10+10.33 EUR
25+9.59 EUR
100+8.76 EUR
490+8.14 EUR
980+7.94 EUR
1470+7.84 EUR
Mindestbestellmenge: 2
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BB 659C-02V H7902 bb639c_bb659cseries.pdf
BB 659C-02V H7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB 659C-02V H7902 bb639c_bb659cseries.pdf
BB 659C-02V H7902
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BB659C02VH7912XTSA1 bb639c_bb659cseries.pdf
BB659C02VH7912XTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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IAUCN04S7L004ATMA1 Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70
IAUCN04S7L004ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L004ATMA1 Infineon-IAUCN04S7L004-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ed15ae1a70
IAUCN04S7L004ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
10+3.61 EUR
100+2.85 EUR
Mindestbestellmenge: 4
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IRG4PC30FPBF irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2
IRG4PC30FPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4PC30KPBF irg4pc30kpbf.pdf?fileId=5546d462533600a401535643d3a122c6
IRG4PC30KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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CY8CPROTO-040T-MS
CY8CPROTO-040T-MS
Hersteller: Infineon Technologies
Description: CY8CPROTO-040T-MS
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: CY8C4046LQI-T452
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+98.65 EUR
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T1190N18TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1190 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 2800 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T1500N14TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N14TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 140°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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T1330N22TOFVTXPSA1 Infineon-T1330N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712b08a0734036
T1330N22TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 2600A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 26500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1330 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2600 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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T930N36TOFVTXPSA1 Infineon-T930N-DataSheet-v01_00-EN.pdf?fileId=5546d4627112d9d501712afb8eb8400d
Hersteller: Infineon Technologies
Description: SCR MODULE 3.6KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 120°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 930 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
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IPAN60R180CM8XKSA1
IPAN60R180CM8XKSA1
Hersteller: Infineon Technologies
Description: IPAN60R180CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 400 V
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
50+2.29 EUR
100+2.04 EUR
Mindestbestellmenge: 5
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IPZA60R180P7XKSA1 Infineon-IPZA60R180P7-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016045bd6c491a3c
IPZA60R180P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
161+3.04 EUR
Mindestbestellmenge: 161
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CYTMA568-56LQI44BB CYTMA568_Summary_RevA_5-26-16.pdf
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 56QFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
Voltage - Supply: 1.71V ~ 5.5V
Resolution (Bits): 32 b
Supplier Device Package: 56-QFN (6x6)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
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CY8CTST200-24LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTST200-24LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.04 EUR
10+5.35 EUR
25+4.92 EUR
100+4.45 EUR
Mindestbestellmenge: 3
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AUIRFU4104 AUIRF%28R%2CU%294104.pdf
AUIRFU4104
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IQDH29NE2LM5SCATMA1 Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c
IQDH29NE2LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Produkt ist nicht verfügbar
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IQDH29NE2LM5SCATMA1 Infineon-IQDH29NE2LM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c08fdf0c1c
IQDH29NE2LM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
auf Bestellung 4963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.02 EUR
10+4.65 EUR
100+3.93 EUR
500+3.16 EUR
1000+2.80 EUR
Mindestbestellmenge: 3
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IQD016N08NM5SCATMA1 Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c
IQD016N08NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Produkt ist nicht verfügbar
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IQD016N08NM5SCATMA1 Infineon-IQD016N08NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b6dff5a3603c
IQD016N08NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
auf Bestellung 4808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
10+6.40 EUR
100+5.17 EUR
500+4.49 EUR
1000+3.87 EUR
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XE162FL20F80LRAAKXUMA1 fundamentals-of-power-semiconductors
XE162FL20F80LRAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 160KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 19x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-22
Number of I/O: 48
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE162HM-48F80L AA XE162xM.pdf
SAF-XE162HM-48F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-13
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DEMOBOARDTLD1314ELTOBO1 Infineon-Infineon_Basic_LED_Driver_Family_Demo_Board_20130726-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f14a0ad5b7e93
DEMOBOARDTLD1314ELTOBO1
Hersteller: Infineon Technologies
Description: DEMOBOARD TLD1314EL
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
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FS150R07N3E4BOSA1 Infineon-FS150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f44ea50311f66
FS150R07N3E4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 150A 430W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 430 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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D400N18BVFXPSA1 D400N_1-6-06.pdf
D400N18BVFXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1800V 450A
Packaging: Bulk
Package / Case: DO-205AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
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IR2181PBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF82912HV1.4
Hersteller: Infineon Technologies
Description: Q-SMINT SECOND GEN. MODULAR ISDN
Packaging: Bulk
auf Bestellung 852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+24.84 EUR
Mindestbestellmenge: 20
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PEF82902FV1.1 INFNS03723-1.pdf?t.download=true&u=5oefqw
PEF82902FV1.1
Hersteller: Infineon Technologies
Description: PEF82902 - T-SMINTI SECOND GEN.
Packaging: Bulk
auf Bestellung 2880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+37.45 EUR
Mindestbestellmenge: 14
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ISA170170N04LMDSXTMA1 Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a
ISA170170N04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170170N04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
Produkt ist nicht verfügbar
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ISA170170N04LMDSXTMA1 Infineon-ISA170170N04LMDS-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d33fbc7d631a
ISA170170N04LMDSXTMA1
Hersteller: Infineon Technologies
Description: ISA170170N04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 9.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
19+0.97 EUR
100+0.63 EUR
Mindestbestellmenge: 12
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IRFR4105TR irfr4105pbf.pdf?fileId=5546d462533600a401535632110f20e9
IRFR4105TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFR4105 AUIRFR4105.pdf
AUIRFR4105
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 20A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8CMBR3108-LQXIT Infineon-CY8CMBR3002_CY8CMBR3102_CY8CMBR3106S_CY8CMBR3108_CY8CMBR3110_CY8CMBR3116-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe3508318e
CY8CMBR3108-LQXIT
Hersteller: Infineon Technologies
Description: IC CAP SENSE 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Current - Supply: 140mA
Number of Inputs: Up to 8
Supplier Device Package: 16-QFN (3x3)
Proximity Detection: Yes
LED Driver Channels: Up to 4
DigiKey Programmable: Not Verified
auf Bestellung 4191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.86 EUR
25+2.62 EUR
100+2.35 EUR
250+2.22 EUR
500+2.14 EUR
1000+2.07 EUR
Mindestbestellmenge: 5
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BTS700151ESPDAUGHBDTOBO1
BTS700151ESPDAUGHBDTOBO1
Hersteller: Infineon Technologies
Description: BTS70015-1ESP DAUGHBD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Platform: Arduino
auf Bestellung 2 Stücke:
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Anzahl Preis
1+80.20 EUR
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