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CY96F388HSBPMC-GS-UJF4E1 CY96F388HSBPMC-GS-UJF4E1 Infineon Technologies CY96380.pdf Description: IC MCU 16BIT 576KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 28K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUCN04S7L050HATMA1 IAUCN04S7L050HATMA1 Infineon Technologies infineon-iaucn04s7l050h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7L050HATMA1 IAUCN04S7L050HATMA1 Infineon Technologies infineon-iaucn04s7l050h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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7+2.64 EUR
11+1.68 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
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IAUCN04S7N054HATMA1 IAUCN04S7N054HATMA1 Infineon Technologies infineon-iaucn04s7n054h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N054HATMA1 IAUCN04S7N054HATMA1 Infineon Technologies infineon-iaucn04s7n054h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N040HATMA1 IAUCN04S7N040HATMA1 Infineon Technologies infineon-iaucn04s7n040h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N040HATMA1 IAUCN04S7N040HATMA1 Infineon Technologies infineon-iaucn04s7n040h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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10+1.88 EUR
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500+1.01 EUR
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IRFZ46ZSPBF IRFZ46ZSPBF Infineon Technologies irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226 Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 Infineon Technologies Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N024HATMA1 IAUCN04S7N024HATMA1 Infineon Technologies infineon-iaucn04s7n024d-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N024HATMA1 IAUCN04S7N024HATMA1 Infineon Technologies infineon-iaucn04s7n024d-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
1000+1.84 EUR
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IAUCN04S7L023HATMA1 IAUCN04S7L023HATMA1 Infineon Technologies infineon-iaucn04s7l023h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7L023HATMA1 IAUCN04S7L023HATMA1 Infineon Technologies infineon-iaucn04s7l023h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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6+3.45 EUR
10+2.56 EUR
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100+2.09 EUR
250+1.97 EUR
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IAUCN04S7L025AHATMA1 IAUCN04S7L025AHATMA1 Infineon Technologies infineon-iaucn04s7l025ah-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L025AHATMA1 IAUCN04S7L025AHATMA1 Infineon Technologies infineon-iaucn04s7l025ah-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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5+3.64 EUR
10+2.71 EUR
25+2.47 EUR
100+2.21 EUR
250+2.09 EUR
500+2.02 EUR
1000+1.96 EUR
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ISG0613N04NM6HATMA1 ISG0613N04NM6HATMA1 Infineon Technologies Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2 Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
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ISG0613N04NM6HATMA1 ISG0613N04NM6HATMA1 Infineon Technologies Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2 Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
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IPT65R040CM8XTMA1 IPT65R040CM8XTMA1 Infineon Technologies Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65 Description: IPT65R040CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
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IPT65R040CM8XTMA1 IPT65R040CM8XTMA1 Infineon Technologies Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65 Description: IPT65R040CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
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CYT2B98CACQ0AZSGST CYT2B98CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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CY8C4127LQSS445XQSA1 CY8C4127LQSS445XQSA1 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 54
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CY8C4147LQSS445XQSA1 CY8C4147LQSS445XQSA1 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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AIKQB120N75CP2ALSA1 AIKQB120N75CP2ALSA1 Infineon Technologies Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2 Description: AIKQB120N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
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AIKQB160N75CP2ALSA1 AIKQB160N75CP2ALSA1 Infineon Technologies Infineon-AIKQB160N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c4129d73f5 Description: AIKQB160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72.3ns/216ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 1.02 µC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1.8KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
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TT251N16KOFHPSA1 TT251N16KOFHPSA1 Infineon Technologies TT251N.pdf Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1 Infineon Technologies ISZ056N03LF2SATMA1.pdf Description: ISZ056N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1 Infineon Technologies ISZ056N03LF2SATMA1.pdf Description: ISZ056N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
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IRSM515-024DA2 Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IPU60R2K0C6BKMA1 IPU60R2K0C6BKMA1 Infineon Technologies DS_IPU60R2K0C6_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304335c2937a0135eda173023134 Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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BGSA149M2N10E6327XTSA1 BGSA149M2N10E6327XTSA1 Infineon Technologies BGSA149M2N10_Rev1.6_10-30-23.pdf Description: RF SWITCH SP4T
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 1.2V, 1.8V
Frequency Range: 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSNP-10-9
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BGSA149M2N10E6327XTSA1 BGSA149M2N10E6327XTSA1 Infineon Technologies BGSA149M2N10_Rev1.6_10-30-23.pdf Description: RF SWITCH SP4T
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 1.2V, 1.8V
Frequency Range: 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSNP-10-9
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EVALKITTLE9189QUWTOBO1 EVALKITTLE9189QUWTOBO1 Infineon Technologies Infineon-MOTIX_TLE9189_motor_gate_driver_IC_evaluation_kit-UG-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192bdaf609c0237&da=t Description: EVALKITTLE9189QUWTOBO1
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9189
Embedded: Yes, MCU, 32-Bit
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EVALKITTLE9189QVWTOBO1 EVALKITTLE9189QVWTOBO1 Infineon Technologies Description: EVALKITTLE9189QVWTOBO1
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9189
Embedded: Yes, MCU, 32-Bit
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XC2268I136F128LRAAKXUMA1 XC2268I136F128LRAAKXUMA1 Infineon Technologies Infineon-SAK-XC2268I-136F128LR+AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e75382ba419c Description: IC MCU 16/32BIT 1MB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
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BTS141AKSA1 BTS141AKSA1 Infineon Technologies Infineon-Automotive-Application-Guide-2021-ApplicationBrochure-v02_00-EN.pdf?fileId=5546d462584d1d4a015891808e617573 Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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BTS141TCAUMA1 BTS141TCAUMA1 Infineon Technologies Infineon-Automotive-Application-Guide-2021-ApplicationBrochure-v02_00-EN.pdf?fileId=5546d462584d1d4a015891808e617573 Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
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XDPP1148100BXUMA1 XDPP1148100BXUMA1 Infineon Technologies Infineon-XDPP114x-100B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001934ea1772d4033 Description: CONTROLLER
Packaging: Tape & Reel (TR)
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5000+4.45 EUR
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XDPP1148100BXUMA1 XDPP1148100BXUMA1 Infineon Technologies Infineon-XDPP114x-100B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001934ea1772d4033 Description: CONTROLLER
Packaging: Cut Tape (CT)
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AUIPS1011S AUIPS1011S Infineon Technologies AUIPS1011%28S%29%28R%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
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AUIRFZ24NSTRL AUIRFZ24NSTRL Infineon Technologies auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
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CY8C20534-12PVXIT CY8C20534-12PVXIT Infineon Technologies Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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XMC1403Q040X0064AAXTMA1 XMC1403Q040X0064AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1403Q048X0064AAXTMA1 XMC1403Q048X0064AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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XMC1403Q040X0128AAXTMA1 XMC1403Q040X0128AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1403Q064X0064AAXTMA1 XMC1403Q064X0064AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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XMC1403Q048X0128AAXTMA1 XMC1403Q048X0128AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Produkt ist nicht verfügbar
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BAS7004E6433HTMA1 BAS7004E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 38800 Stücke:
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4486+0.11 EUR
Mindestbestellmenge: 4486
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PEF 4268 T V1.2 PEF 4268 T V1.2 Infineon Technologies PEF%204268%20T%2CF%20Product%20Brief.pdf Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Produkt ist nicht verfügbar
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IRSM515-044PA IRSM515-044PA Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 120 Stücke:
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68+6.75 EUR
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IRSM515-044PA IRSM515-044PA Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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F3L400R10N3S7FC1BPSA1 F3L400R10N3S7FC1BPSA1 Infineon Technologies Description: IGBT MODULE 950V 105A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 70A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 13000 pF @ 25 V
auf Bestellung 20 Stücke:
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1+307.49 EUR
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AUIRLZ24NSTRL AUIRLZ24NSTRL Infineon Technologies AUIRLZ24NS%2CNL.pdf Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLZ24NS AUIRLZ24NS Infineon Technologies AUIRLZ24NS%2CNL.pdf Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY2308ZXI-1HT CY2308ZXI-1HT Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167NPMC-G-MNE2 CY9BF167NPMC-G-MNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167NPMC-GNE2 CY9BF167NPMC-GNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167RPMC-G-MNE2 CY9BF167RPMC-G-MNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167RPMC-GNE2 CY9BF167RPMC-GNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167MPMC1-G-JNE2 CY9BF167MPMC1-G-JNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY96F388HSBPMC-GS-UJF4E1 CY96380.pdf
CY96F388HSBPMC-GS-UJF4E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 28K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUCN04S7L050HATMA1 infineon-iaucn04s7l050h-datasheet-en.pdf
IAUCN04S7L050HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L050HATMA1 infineon-iaucn04s7l050h-datasheet-en.pdf
IAUCN04S7L050HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.68 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
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IAUCN04S7N054HATMA1 infineon-iaucn04s7n054h-datasheet-en.pdf
IAUCN04S7N054HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N054HATMA1 infineon-iaucn04s7n054h-datasheet-en.pdf
IAUCN04S7N054HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.68 EUR
100+1.12 EUR
Mindestbestellmenge: 7
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IAUCN04S7N040HATMA1 infineon-iaucn04s7n040h-datasheet-en.pdf
IAUCN04S7N040HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N040HATMA1 infineon-iaucn04s7n040h-datasheet-en.pdf
IAUCN04S7N040HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
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IRFZ46ZSPBF irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226
IRFZ46ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
IAUC60N04S6L030HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
264+1.73 EUR
Mindestbestellmenge: 264
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IAUCN04S7N024HATMA1 infineon-iaucn04s7n024d-datasheet-en.pdf
IAUCN04S7N024HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N024HATMA1 infineon-iaucn04s7n024d-datasheet-en.pdf
IAUCN04S7N024HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
1000+1.84 EUR
Mindestbestellmenge: 6
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IAUCN04S7L023HATMA1 infineon-iaucn04s7l023h-datasheet-en.pdf
IAUCN04S7L023HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L023HATMA1 infineon-iaucn04s7l023h-datasheet-en.pdf
IAUCN04S7L023HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
Mindestbestellmenge: 6
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IAUCN04S7L025AHATMA1 infineon-iaucn04s7l025ah-datasheet-en.pdf
IAUCN04S7L025AHATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L025AHATMA1 infineon-iaucn04s7l025ah-datasheet-en.pdf
IAUCN04S7L025AHATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.71 EUR
25+2.47 EUR
100+2.21 EUR
250+2.09 EUR
500+2.02 EUR
1000+1.96 EUR
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ISG0613N04NM6HATMA1 Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2
ISG0613N04NM6HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
Produkt ist nicht verfügbar
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ISG0613N04NM6HATMA1 Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2
ISG0613N04NM6HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
auf Bestellung 2698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
10+4.46 EUR
100+3.15 EUR
500+2.9 EUR
Mindestbestellmenge: 3
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IPT65R040CM8XTMA1 Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65
IPT65R040CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT65R040CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
Produkt ist nicht verfügbar
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IPT65R040CM8XTMA1 Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65
IPT65R040CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT65R040CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.44 EUR
10+7.74 EUR
100+5.87 EUR
Mindestbestellmenge: 2
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CYT2B98CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B98CACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4127LQSS445XQSA1 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4127LQSS445XQSA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 54
Produkt ist nicht verfügbar
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CY8C4147LQSS445XQSA1 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQSS445XQSA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AIKQB120N75CP2ALSA1 Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2
AIKQB120N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKQB120N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.18 EUR
30+11.58 EUR
120+9.91 EUR
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AIKQB160N75CP2ALSA1 Infineon-AIKQB160N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c4129d73f5
AIKQB160N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKQB160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72.3ns/216ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 1.02 µC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.01 EUR
30+12.78 EUR
120+10.98 EUR
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TT250N18KOFHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TT250N18KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
auf Bestellung 2 Stücke:
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Anzahl Preis
1+272.4 EUR
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TT251N16KOFHPSA1 TT251N.pdf
TT251N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+266.69 EUR
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1.pdf
ISZ056N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISZ056N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1.pdf
ISZ056N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISZ056N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
auf Bestellung 4936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.4 EUR
Mindestbestellmenge: 12
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IRSM515-024DA2 irsm505-024.pdf
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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IPU60R2K0C6BKMA1 DS_IPU60R2K0C6_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304335c2937a0135eda173023134
IPU60R2K0C6BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 352500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
673+0.68 EUR
Mindestbestellmenge: 673
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BGSA149M2N10E6327XTSA1 BGSA149M2N10_Rev1.6_10-30-23.pdf
BGSA149M2N10E6327XTSA1
Hersteller: Infineon Technologies
Description: RF SWITCH SP4T
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 1.2V, 1.8V
Frequency Range: 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSNP-10-9
Produkt ist nicht verfügbar
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BGSA149M2N10E6327XTSA1 BGSA149M2N10_Rev1.6_10-30-23.pdf
BGSA149M2N10E6327XTSA1
Hersteller: Infineon Technologies
Description: RF SWITCH SP4T
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: General Purpose
Voltage - Supply: 1.2V, 1.8V
Frequency Range: 7.125GHz
Topology: Reflective
Supplier Device Package: PG-TSNP-10-9
auf Bestellung 11950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
25+0.71 EUR
27+0.67 EUR
100+0.61 EUR
250+0.58 EUR
500+0.55 EUR
1000+0.53 EUR
5000+0.48 EUR
Mindestbestellmenge: 22
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EVALKITTLE9189QUWTOBO1 Infineon-MOTIX_TLE9189_motor_gate_driver_IC_evaluation_kit-UG-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192bdaf609c0237&da=t
EVALKITTLE9189QUWTOBO1
Hersteller: Infineon Technologies
Description: EVALKITTLE9189QUWTOBO1
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9189
Embedded: Yes, MCU, 32-Bit
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1080.34 EUR
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EVALKITTLE9189QVWTOBO1
EVALKITTLE9189QVWTOBO1
Hersteller: Infineon Technologies
Description: EVALKITTLE9189QVWTOBO1
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9189
Embedded: Yes, MCU, 32-Bit
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1080.34 EUR
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XC2268I136F128LRAAKXUMA1 Infineon-SAK-XC2268I-136F128LR+AA-DS-v01_03-EN.pdf?fileId=5546d46249cd10140149e75382ba419c
XC2268I136F128LRAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32BIT 1MB FLASH
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 90K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BTS141AKSA1 Infineon-Automotive-Application-Guide-2021-ApplicationBrochure-v02_00-EN.pdf?fileId=5546d462584d1d4a015891808e617573
BTS141AKSA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
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BTS141TCAUMA1 Infineon-Automotive-Application-Guide-2021-ApplicationBrochure-v02_00-EN.pdf?fileId=5546d462584d1d4a015891808e617573
BTS141TCAUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 25mOhm
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-3-2
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
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XDPP1148100BXUMA1 Infineon-XDPP114x-100B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001934ea1772d4033
XDPP1148100BXUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+4.45 EUR
Mindestbestellmenge: 5000
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XDPP1148100BXUMA1 Infineon-XDPP114x-100B-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001934ea1772d4033
XDPP1148100BXUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
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AUIPS1011S AUIPS1011%28S%29%28R%29.pdf
AUIPS1011S
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIRFZ24NSTRL auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd
AUIRFZ24NSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C20534-12PVXIT Infineon-CY8C20134_CY8C20234_CY8C20334_CY8C20434_CY8C20534_CY8C20634_PSoC_Programmable_System-on-Chip-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcc61b2e7f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY8C20534-12PVXIT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1403Q040X0064AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q040X0064AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Produkt ist nicht verfügbar
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XMC1403Q048X0064AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0064AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Produkt ist nicht verfügbar
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XMC1403Q040X0128AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q040X0128AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Produkt ist nicht verfügbar
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XMC1403Q064X0064AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0064AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Produkt ist nicht verfügbar
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XMC1403Q048X0128AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0128AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Produkt ist nicht verfügbar
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BAS7004E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 38800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4486+0.11 EUR
Mindestbestellmenge: 4486
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PEF 4268 T V1.2 PEF%204268%20T%2CF%20Product%20Brief.pdf
PEF 4268 T V1.2
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Produkt ist nicht verfügbar
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IRSM515-044PA IRSM505-044_IRSM515-044_Series.pdf
IRSM515-044PA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Bulk
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
68+6.75 EUR
Mindestbestellmenge: 68
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IRSM515-044PA IRSM505-044_IRSM515-044_Series.pdf
IRSM515-044PA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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F3L400R10N3S7FC1BPSA1
F3L400R10N3S7FC1BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 950V 105A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 70A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 13000 pF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+307.49 EUR
10+288.44 EUR
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AUIRLZ24NSTRL AUIRLZ24NS%2CNL.pdf
AUIRLZ24NSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLZ24NS AUIRLZ24NS%2CNL.pdf
AUIRLZ24NS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY2308ZXI-1HT Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308ZXI-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167NPMC-G-MNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167NPMC-G-MNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167NPMC-GNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167NPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167RPMC-G-MNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167RPMC-G-MNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167RPMC-GNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167RPMC-GNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF167MPMC1-G-JNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167MPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 63
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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