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BB 664 H7902 BB 664 H7902 Infineon Technologies INFNS15423-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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IMSQ120R012M2HHXUMA1 IMSQ120R012M2HHXUMA1 Infineon Technologies DS_IMSQ120R012M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
Produkt ist nicht verfügbar
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IMSQ120R012M2HHXUMA1 IMSQ120R012M2HHXUMA1 Infineon Technologies DS_IMSQ120R012M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
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CY8C4147AXIT473XQMA1 CY8C4147AXIT473XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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IRF7469PBF IRF7469PBF Infineon Technologies irf7469pbf.pdf?fileId=5546d462533600a4015355ff18861c12 Description: MOSFET N-CH 40V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Produkt ist nicht verfügbar
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S25HS02GTDPBHV053 S25HS02GTDPBHV053 Infineon Technologies infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral Description: IC FLASH 2GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZN10S7N078ATMA1 IAUZN10S7N078ATMA1 Infineon Technologies infineon-iauzn10s7n078-datasheet-en.pdf Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN10S7N078ATMA1 IAUZN10S7N078ATMA1 Infineon Technologies infineon-iauzn10s7n078-datasheet-en.pdf Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4960 Stücke:
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10+2.1 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.09 EUR
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CY8C4146AXIT403XQMA1 CY8C4146AXIT403XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4146AXIT413XQMA1 CY8C4146AXIT413XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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IRS2336DJPBF IRS2336DJPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRLU024Z AUIRLU024Z Infineon Technologies AUIRLR%2CU024Z.pdf Description: MOSFET N-CH 55V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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S25FL128SDPBHB210 S25FL128SDPBHB210 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ICE5AR4770AG1XUMA1 ICE5AR4770AG1XUMA1 Infineon Technologies Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37 Description: COOLSET
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
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ICE5AR4770AG1XUMA1 ICE5AR4770AG1XUMA1 Infineon Technologies Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37 Description: COOLSET
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Produkt ist nicht verfügbar
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IRS21281PBF IRS21281PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFHS8242TRPBF IRFHS8242TRPBF Infineon Technologies irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
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IRFHS8242TRPBF IRFHS8242TRPBF Infineon Technologies irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
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ESD188B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f Description: ESD188B1W0201E6327XTSA1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD188B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f Description: ESD188B1W0201E6327XTSA1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
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87+0.2 EUR
142+0.12 EUR
500+0.091 EUR
1000+0.08 EUR
2000+0.071 EUR
5000+0.061 EUR
Mindestbestellmenge: 53
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PVI5050NPBF PVI5050NPBF Infineon Technologies Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Number of Channels: 1
Produkt ist nicht verfügbar
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S6E2CC8JFAGB1000A S6E2CC8JFAGB1000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2CCAJFAGB1000A S6E2CCAJFAGB1000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 192BGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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AUIRF4104S AUIRF4104S Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF4104STRL AUIRF4104STRL Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
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CY8C4045LQIT441XQSA1 Infineon Technologies Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: HMI-GROWTH PSOC4
Packaging: Tray
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IPB80N06S2H5ATMA2 IPB80N06S2H5ATMA2 Infineon Technologies Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333c6c5ac2&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
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64-2137PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
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IPP083N10N5XKSA1 IPP083N10N5XKSA1 Infineon Technologies Infineon-IPP083N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
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SPA21N50C3XKSA1 SPA21N50C3XKSA1 Infineon Technologies SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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CY96F388HSBPMC-GS-UJF4E1 CY96F388HSBPMC-GS-UJF4E1 Infineon Technologies CY96380.pdf Description: IC MCU 16BIT 576KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 28K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
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IAUCN04S7L050HATMA1 IAUCN04S7L050HATMA1 Infineon Technologies infineon-iaucn04s7l050h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7L050HATMA1 IAUCN04S7L050HATMA1 Infineon Technologies infineon-iaucn04s7l050h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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7+2.64 EUR
11+1.68 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
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IAUCN04S7N054HATMA1 IAUCN04S7N054HATMA1 Infineon Technologies infineon-iaucn04s7n054h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N054HATMA1 IAUCN04S7N054HATMA1 Infineon Technologies infineon-iaucn04s7n054h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 375 Stücke:
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7+2.64 EUR
11+1.68 EUR
100+1.12 EUR
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IAUCN04S7N040HATMA1 IAUCN04S7N040HATMA1 Infineon Technologies infineon-iaucn04s7n040h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N040HATMA1 IAUCN04S7N040HATMA1 Infineon Technologies infineon-iaucn04s7n040h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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6+2.96 EUR
10+1.88 EUR
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500+1.01 EUR
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IRFZ46ZSPBF IRFZ46ZSPBF Infineon Technologies irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226 Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 Infineon Technologies Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N024HATMA1 IAUCN04S7N024HATMA1 Infineon Technologies infineon-iaucn04s7n024d-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N024HATMA1 IAUCN04S7N024HATMA1 Infineon Technologies infineon-iaucn04s7n024d-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
1000+1.84 EUR
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IAUCN04S7L023HATMA1 IAUCN04S7L023HATMA1 Infineon Technologies infineon-iaucn04s7l023h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7L023HATMA1 IAUCN04S7L023HATMA1 Infineon Technologies infineon-iaucn04s7l023h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
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IAUCN04S7L025AHATMA1 IAUCN04S7L025AHATMA1 Infineon Technologies infineon-iaucn04s7l025ah-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7L025AHATMA1 IAUCN04S7L025AHATMA1 Infineon Technologies infineon-iaucn04s7l025ah-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.71 EUR
25+2.47 EUR
100+2.21 EUR
250+2.09 EUR
500+2.02 EUR
1000+1.96 EUR
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ISG0613N04NM6HATMA1 ISG0613N04NM6HATMA1 Infineon Technologies Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2 Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
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ISG0613N04NM6HATMA1 ISG0613N04NM6HATMA1 Infineon Technologies Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2 Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
auf Bestellung 2698 Stücke:
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3+6.74 EUR
10+4.46 EUR
100+3.15 EUR
500+2.9 EUR
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IPT65R040CM8XTMA1 IPT65R040CM8XTMA1 Infineon Technologies Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65 Description: IPT65R040CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
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IPT65R040CM8XTMA1 IPT65R040CM8XTMA1 Infineon Technologies Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65 Description: IPT65R040CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
auf Bestellung 1660 Stücke:
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CYT2B98CACQ0AZSGST CYT2B98CACQ0AZSGST Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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CY8C4127LQSS445XQSA1 CY8C4127LQSS445XQSA1 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 54
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CY8C4147LQSS445XQSA1 CY8C4147LQSS445XQSA1 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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AIKQB120N75CP2ALSA1 AIKQB120N75CP2ALSA1 Infineon Technologies Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2 Description: AIKQB120N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
auf Bestellung 235 Stücke:
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1+19.18 EUR
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AIKQB160N75CP2ALSA1 AIKQB160N75CP2ALSA1 Infineon Technologies Infineon-AIKQB160N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c4129d73f5 Description: AIKQB160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72.3ns/216ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 1.02 µC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
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TT250N18KOFHPSA1 TT250N18KOFHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1.8KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
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TT251N16KOFHPSA1 TT251N16KOFHPSA1 Infineon Technologies TT251N.pdf Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1 Infineon Technologies ISZ056N03LF2SATMA1.pdf Description: ISZ056N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1 Infineon Technologies ISZ056N03LF2SATMA1.pdf Description: ISZ056N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
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12+1.53 EUR
19+0.96 EUR
100+0.63 EUR
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1000+0.44 EUR
2000+0.4 EUR
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IRSM515-024DA2 Infineon Technologies irsm505-024.pdf Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
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IPU60R2K0C6BKMA1 IPU60R2K0C6BKMA1 Infineon Technologies DS_IPU60R2K0C6_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304335c2937a0135eda173023134 Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
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673+0.68 EUR
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BB 664 H7902 INFNS15423-1.pdf?t.download=true&u=5oefqw
BB 664 H7902
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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Anzahl Preis
4724+0.091 EUR
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IMSQ120R012M2HHXUMA1 DS_IMSQ120R012M2HH_v1.00_en.pdf
IMSQ120R012M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
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IMSQ120R012M2HHXUMA1 DS_IMSQ120R012M2HH_v1.00_en.pdf
IMSQ120R012M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
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Anzahl Preis
1+61.65 EUR
10+51.24 EUR
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CY8C4147AXIT473XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4147AXIT473XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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IRF7469PBF irf7469pbf.pdf?fileId=5546d462533600a4015355ff18861c12
IRF7469PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
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S25HS02GTDPBHV053 infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral
S25HS02GTDPBHV053
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZN10S7N078ATMA1 infineon-iauzn10s7n078-datasheet-en.pdf
IAUZN10S7N078ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
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IAUZN10S7N078ATMA1 infineon-iauzn10s7n078-datasheet-en.pdf
IAUZN10S7N078ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.1 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.09 EUR
Mindestbestellmenge: 6
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CY8C4146AXIT403XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AXIT403XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4146AXIT413XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AXIT413XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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IRS2336DJPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS2336DJPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRLU024Z AUIRLR%2CU024Z.pdf
AUIRLU024Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S25FL128SDPBHB210 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPBHB210
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ICE5AR4770AG1XUMA1 Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37
ICE5AR4770AG1XUMA1
Hersteller: Infineon Technologies
Description: COOLSET
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Produkt ist nicht verfügbar
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ICE5AR4770AG1XUMA1 Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37
ICE5AR4770AG1XUMA1
Hersteller: Infineon Technologies
Description: COOLSET
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Produkt ist nicht verfügbar
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IRS21281PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21281PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFHS8242TRPBF irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d
IRFHS8242TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.28 EUR
Mindestbestellmenge: 4000
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IRFHS8242TRPBF irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d
IRFHS8242TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ESD188B1W0201E6327XTSA1 Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f
Hersteller: Infineon Technologies
Description: ESD188B1W0201E6327XTSA1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD188B1W0201E6327XTSA1 Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f
Hersteller: Infineon Technologies
Description: ESD188B1W0201E6327XTSA1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
auf Bestellung 12002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.2 EUR
142+0.12 EUR
500+0.091 EUR
1000+0.08 EUR
2000+0.071 EUR
5000+0.061 EUR
Mindestbestellmenge: 53
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PVI5050NPBF Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI5050NPBF
Hersteller: Infineon Technologies
Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Number of Channels: 1
Produkt ist nicht verfügbar
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S6E2CC8JFAGB1000A download
S6E2CC8JFAGB1000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2CCAJFAGB1000A download
S6E2CCAJFAGB1000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 192BGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF4104S IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF4104STRL IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C4045LQIT441XQSA1 Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Produkt ist nicht verfügbar
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IPB80N06S2H5ATMA2 Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333c6c5ac2&ack=t
IPB80N06S2H5ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+2.96 EUR
Mindestbestellmenge: 154
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64-2137PBF fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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IPP083N10N5XKSA1 Infineon-IPP083N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b
IPP083N10N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
50+1.85 EUR
100+1.66 EUR
Mindestbestellmenge: 5
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SPA21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
SPA21N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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CY96F388HSBPMC-GS-UJF4E1 CY96380.pdf
CY96F388HSBPMC-GS-UJF4E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 576KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 56MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 28K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: F²MC-16FX
Data Converters: A/D 16x10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, LCD, LVD, LVR, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 96
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUCN04S7L050HATMA1 infineon-iaucn04s7l050h-datasheet-en.pdf
IAUCN04S7L050HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L050HATMA1 infineon-iaucn04s7l050h-datasheet-en.pdf
IAUCN04S7L050HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 20V
Rds On (Max) @ Id, Vgs: 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.68 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 7
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IAUCN04S7N054HATMA1 infineon-iaucn04s7n054h-datasheet-en.pdf
IAUCN04S7N054HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N054HATMA1 infineon-iaucn04s7n054h-datasheet-en.pdf
IAUCN04S7N054HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
11+1.68 EUR
100+1.12 EUR
Mindestbestellmenge: 7
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IAUCN04S7N040HATMA1 infineon-iaucn04s7n040h-datasheet-en.pdf
IAUCN04S7N040HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N040HATMA1 infineon-iaucn04s7n040h-datasheet-en.pdf
IAUCN04S7N040HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
Mindestbestellmenge: 6
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IRFZ46ZSPBF irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226
IRFZ46ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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IAUC60N04S6L030HATMA1 Infineon-IAUC60N04S6L030H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309120315fef
IAUC60N04S6L030HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 60A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2128pF @ 25V
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
264+1.73 EUR
Mindestbestellmenge: 264
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IAUCN04S7N024HATMA1 infineon-iaucn04s7n024d-datasheet-en.pdf
IAUCN04S7N024HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N024HATMA1 infineon-iaucn04s7n024d-datasheet-en.pdf
IAUCN04S7N024HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
1000+1.84 EUR
Mindestbestellmenge: 6
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IAUCN04S7L023HATMA1 infineon-iaucn04s7l023h-datasheet-en.pdf
IAUCN04S7L023HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L023HATMA1 infineon-iaucn04s7l023h-datasheet-en.pdf
IAUCN04S7L023HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.56 EUR
25+2.33 EUR
100+2.09 EUR
250+1.97 EUR
500+1.9 EUR
Mindestbestellmenge: 6
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IAUCN04S7L025AHATMA1 infineon-iaucn04s7l025ah-datasheet-en.pdf
IAUCN04S7L025AHATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L025AHATMA1 infineon-iaucn04s7l025ah-datasheet-en.pdf
IAUCN04S7L025AHATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.71 EUR
25+2.47 EUR
100+2.21 EUR
250+2.09 EUR
500+2.02 EUR
1000+1.96 EUR
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ISG0613N04NM6HATMA1 Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2
ISG0613N04NM6HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
Produkt ist nicht verfügbar
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ISG0613N04NM6HATMA1 Infineon-ISG0613N04NM6H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951a6c64cf2
ISG0613N04NM6HATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10VITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-VITFN-10-1
auf Bestellung 2698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.74 EUR
10+4.46 EUR
100+3.15 EUR
500+2.9 EUR
Mindestbestellmenge: 3
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IPT65R040CM8XTMA1 Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65
IPT65R040CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT65R040CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
Produkt ist nicht verfügbar
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IPT65R040CM8XTMA1 Infineon-IPT65R040CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019626b3288c3b65
IPT65R040CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT65R040CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.44 EUR
10+7.74 EUR
100+5.87 EUR
Mindestbestellmenge: 2
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CYT2B98CACQ0AZSGST Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B98CACQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 176QFP
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4127LQSS445XQSA1 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4127LQSS445XQSA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 56UFQFN
Packaging: Tray
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 54
Produkt ist nicht verfügbar
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CY8C4147LQSS445XQSA1 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQSS445XQSA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AIKQB120N75CP2ALSA1 Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2
AIKQB120N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKQB120N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.18 EUR
30+11.58 EUR
120+9.91 EUR
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AIKQB160N75CP2ALSA1 Infineon-AIKQB160N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c4129d73f5
AIKQB160N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKQB160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 72.3ns/216ns
Switching Energy: 12.4mJ (on), 5.7mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 1.02 µC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.01 EUR
30+12.78 EUR
120+10.98 EUR
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TT250N18KOFHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TT250N18KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.8 kV
auf Bestellung 2 Stücke:
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Anzahl Preis
1+272.4 EUR
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TT251N16KOFHPSA1 TT251N.pdf
TT251N16KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9100A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 250 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+266.69 EUR
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1.pdf
ISZ056N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISZ056N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
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ISZ056N03LF2SATMA1 ISZ056N03LF2SATMA1.pdf
ISZ056N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISZ056N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1012 pF @ 15 V
auf Bestellung 4936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
19+0.96 EUR
100+0.63 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.4 EUR
Mindestbestellmenge: 12
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IRSM515-024DA2 irsm505-024.pdf
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 1.6A 23DIP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 32-PowerDIP Module, 23 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 1.8Ohm
Applications: AC Motors
Current - Output / Channel: 1.6A
Current - Peak Output: 7A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-DIP
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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IPU60R2K0C6BKMA1 DS_IPU60R2K0C6_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a304335c2937a0135eda173023134
IPU60R2K0C6BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 352500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
673+0.68 EUR
Mindestbestellmenge: 673
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