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IPDQ60T022S7AXTMA1 IPDQ60T022S7AXTMA1 Infineon Technologies IPDQ60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60T022S7AXTMA1 IPDQ60T022S7AXTMA1 Infineon Technologies IPDQ60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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10+12.84 EUR
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100+10.97 EUR
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BTS70202EPADAUGHBRDTOBO1 BTS70202EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7020-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3 Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
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IPS50R520CP IPS50R520CP Infineon Technologies IPS50R520CP.pdf Description: MOSFET N-CH 550V 7.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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AUIRFU8403-701TRL AUIRFU8403-701TRL Infineon Technologies Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO251-3-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
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AN983X-AH-T-22 AN983X-AH-T-22 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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AN983X-AH-T-22 AN983X-AH-T-22 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR2905ZTR AUIRFR2905ZTR Infineon Technologies auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
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EVAL2EDGANINV1KWTOBO1 EVAL2EDGANINV1KWTOBO1 Infineon Technologies infineon-ug-2025-07-eval-2edgan-inv-1kw-usermanual-en.pdf Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
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CYPET131XQMA1 CYPET131XQMA1 Infineon Technologies Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96 Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
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IDWD10G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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IDDD04G65C6XTMA1 IDDD04G65C6XTMA1 Infineon Technologies Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03 Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
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IRS2117PBF IRS2117PBF Infineon Technologies irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2117PBF IRS2117PBF Infineon Technologies irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYALKIT-E03 CYALKIT-E03 Infineon Technologies Infineon-CYALKIT-E03_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd8d0313ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EXPANSION PACK FOR CYALKIT-E02
Packaging: Bulk
Function: Bluetooth Low Energy (BLE)
Type: RF
Contents: Board(s)
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Platform: BLE-Beacon™
Produkt ist nicht verfügbar
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EVALS26HL512TTOBO1 EVALS26HL512TTOBO1 Infineon Technologies EVALS26HL512TTOBO1.pdf Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
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CYPD1120-35FNXIT CYPD1120-35FNXIT Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 35-WLCSP (3.23x2.10)
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4675GATMA1 TLE4675GATMA1 Infineon Technologies Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46 Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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IMW65R075M2HXKSA1 IMW65R075M2HXKSA1 Infineon Technologies infineon-imw65r075m2h-datasheet-en.pdf Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
auf Bestellung 284 Stücke:
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S29GL256S11TFVV10 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256Mb (16M x 16)
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
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10+2.28 EUR
25+2.08 EUR
100+1.86 EUR
250+1.75 EUR
500+1.69 EUR
1000+1.64 EUR
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AUIRFR2905Z AUIRFR2905Z Infineon Technologies auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
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TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
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24+0.75 EUR
26+0.7 EUR
100+0.63 EUR
250+0.58 EUR
500+0.55 EUR
1000+0.52 EUR
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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3+6.95 EUR
5+6.23 EUR
10+5.97 EUR
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50+5.43 EUR
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500+4.83 EUR
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
auf Bestellung 200 Stücke:
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2+9.47 EUR
5+8.53 EUR
10+8.17 EUR
25+7.75 EUR
50+7.47 EUR
100+7.2 EUR
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CYPD8125-48LDXIT CYPD8125-48LDXIT Infineon Technologies Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
auf Bestellung 2435 Stücke:
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3+7.88 EUR
10+6.02 EUR
25+5.55 EUR
100+5.04 EUR
250+4.8 EUR
500+4.65 EUR
1000+4.53 EUR
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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AUIRF1405 AUIRF1405 Infineon Technologies AUIRF1405.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
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TLD11731STDEVALTOBO1 TLD11731STDEVALTOBO1 Infineon Technologies infineon-tld1173-1std-eval-ug-usermanual-en.pdf Description: TLD1173-1STD_EVAL
Packaging: Box
Voltage - Output: 6.5V ~ 18.5V
Voltage - Input: 8V ~ 21V
Contents: Board(s)
Current - Output / Channel: 400mA
Utilized IC / Part: TLD1173
Outputs and Type: 1 Non-Isolated Output
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IRG8P08N120KDPBF IRG8P08N120KDPBF Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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IRG8P08N120KD-EPBF IRG8P08N120KD-EPBF Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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IPI072N10N3GXKSA1 IPI072N10N3GXKSA1 Infineon Technologies Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405 Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 500 Stücke:
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CY8C3866LTI-207 CY8C3866LTI-207 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRF840PBF IRF840PBF Infineon Technologies irf840_SiHF840_RevD_5-2-16.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRF3205ZPBFXKMA1 IRF3205ZPBFXKMA1 Infineon Technologies Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
auf Bestellung 900 Stücke:
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IRFB4332PBFXKMA1 Infineon Technologies Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1 Infineon Technologies IMZC120R053M2HXKSA1.pdf Description: SICFET N-CH 1200V 38A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
auf Bestellung 366 Stücke:
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
auf Bestellung 307 Stücke:
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10+29.17 EUR
25+28.54 EUR
50+28.08 EUR
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250+27.33 EUR
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AUIRF4905L AUIRF4905L Infineon Technologies AUIRF4905S%2CL.pdf Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 299 Stücke:
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1+42.91 EUR
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 620 Stücke:
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10+10.24 EUR
100+8.34 EUR
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S29GL01GS11TFV020 S29GL01GS11TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 110 Stücke:
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FZ675R65KE4NPSA1 FZ675R65KE4NPSA1 Infineon Technologies Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01 Description: IGBT MODULE 6.5KV 675A 2.4MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
auf Bestellung 5 Stücke:
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1+2276.07 EUR
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IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB7434GPBF IRFB7434GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
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CY8C4148AZES595TXUMA1 CY8C4148AZES595TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRL1404ZS AUIRL1404ZS Infineon Technologies INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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FS1000R08A7P3BHPSA1 Infineon Technologies infineon-fs1000r08a7p3b-datasheet-en.pdf Description: IGBT MOD 750V 600A AGHDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
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IPDQ60T022S7AXTMA1 IPDQ60T022S7A_Rev2.0_11-30-23.pdf
IPDQ60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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IPDQ60T022S7AXTMA1 IPDQ60T022S7A_Rev2.0_11-30-23.pdf
IPDQ60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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Anzahl Preis
2+16.4 EUR
10+12.84 EUR
25+11.95 EUR
100+10.97 EUR
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BTS70202EPADAUGHBRDTOBO1 Infineon-BTS7020-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3
BTS70202EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
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IPS50R520CP IPS50R520CP.pdf
IPS50R520CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 7.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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AUIRFU8403-701TRL
AUIRFU8403-701TRL
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO251-3-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AN983X-AH-T-22 fundamentals-of-power-semiconductors
AN983X-AH-T-22
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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AN983X-AH-T-22 fundamentals-of-power-semiconductors
AN983X-AH-T-22
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR2905ZTR auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
AUIRFR2905ZTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EVAL2EDGANINV1KWTOBO1 infineon-ug-2025-07-eval-2edgan-inv-1kw-usermanual-en.pdf
EVAL2EDGANINV1KWTOBO1
Hersteller: Infineon Technologies
Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
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1+708.93 EUR
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CYPET131XQMA1 Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96
CYPET131XQMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
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19+0.93 EUR
27+0.67 EUR
30+0.6 EUR
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IDWD10G120C5XKSA2
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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IDDD04G65C6XTMA1 Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03
IDDD04G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
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218+2.1 EUR
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IRS2117PBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
IRS2117PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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Anzahl Preis
146+3.12 EUR
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IRS2117PBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
IRS2117PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYALKIT-E03 Infineon-CYALKIT-E03_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd8d0313ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYALKIT-E03
Hersteller: Infineon Technologies
Description: EXPANSION PACK FOR CYALKIT-E02
Packaging: Bulk
Function: Bluetooth Low Energy (BLE)
Type: RF
Contents: Board(s)
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Platform: BLE-Beacon™
Produkt ist nicht verfügbar
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EVALS26HL512TTOBO1 EVALS26HL512TTOBO1.pdf
EVALS26HL512TTOBO1
Hersteller: Infineon Technologies
Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
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1+32.08 EUR
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CYPD1120-35FNXIT
CYPD1120-35FNXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 35-WLCSP (3.23x2.10)
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4675GATMA1 Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46
TLE4675GATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 6940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+2.74 EUR
Mindestbestellmenge: 167
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IMW65R075M2HXKSA1 infineon-imw65r075m2h-datasheet-en.pdf
IMW65R075M2HXKSA1
Hersteller: Infineon Technologies
Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.8 EUR
30+5.61 EUR
120+4.68 EUR
Mindestbestellmenge: 2
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S29GL256S11TFVV10 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
Hersteller: Infineon Technologies
Description: PNOR
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256Mb (16M x 16)
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Hersteller: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Hersteller: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+2.28 EUR
25+2.08 EUR
100+1.86 EUR
250+1.75 EUR
500+1.69 EUR
1000+1.64 EUR
Mindestbestellmenge: 6
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AUIRFR2905Z auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
AUIRFR2905Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE496048MS2XTSA1
Hersteller: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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TLE496048MS2XTSA1
Hersteller: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.75 EUR
26+0.7 EUR
100+0.63 EUR
250+0.58 EUR
500+0.55 EUR
1000+0.52 EUR
Mindestbestellmenge: 21
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
5+6.23 EUR
10+5.97 EUR
25+5.65 EUR
50+5.43 EUR
100+5.23 EUR
500+4.83 EUR
Mindestbestellmenge: 3
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Hersteller: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Produkt ist nicht verfügbar
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Hersteller: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.47 EUR
5+8.53 EUR
10+8.17 EUR
25+7.75 EUR
50+7.47 EUR
100+7.2 EUR
Mindestbestellmenge: 2
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CYPD8125-48LDXIT Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t
CYPD8125-48LDXIT
Hersteller: Infineon Technologies
Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
auf Bestellung 2435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.88 EUR
10+6.02 EUR
25+5.55 EUR
100+5.04 EUR
250+4.8 EUR
500+4.65 EUR
1000+4.53 EUR
Mindestbestellmenge: 3
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IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF1405 AUIRF1405.pdf
AUIRF1405
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLD11731STDEVALTOBO1 infineon-tld1173-1std-eval-ug-usermanual-en.pdf
TLD11731STDEVALTOBO1
Hersteller: Infineon Technologies
Description: TLD1173-1STD_EVAL
Packaging: Box
Voltage - Output: 6.5V ~ 18.5V
Voltage - Input: 8V ~ 21V
Contents: Board(s)
Current - Output / Channel: 400mA
Utilized IC / Part: TLD1173
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+291.81 EUR
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IRG8P08N120KDPBF IRG8x08N120KD.pdf
IRG8P08N120KDPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
Produkt ist nicht verfügbar
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IRG8P08N120KD-EPBF IRG8x08N120KD.pdf
IRG8P08N120KD-EPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 15A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
Produkt ist nicht verfügbar
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
Produkt ist nicht verfügbar
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
Produkt ist nicht verfügbar
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IPI072N10N3GXKSA1 Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405
IPI072N10N3GXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
178+2.57 EUR
Mindestbestellmenge: 178
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CY8C3866LTI-207 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866LTI-207
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
IRF840PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205ZPBFXKMA1
IRF3205ZPBFXKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
50+1.57 EUR
100+1.41 EUR
500+1.13 EUR
Mindestbestellmenge: 6
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IRFB4332PBFXKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
Produkt ist nicht verfügbar
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1.pdf
IMZC120R053M2HXKSA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 38A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.19 EUR
30+8.36 EUR
120+7.08 EUR
Mindestbestellmenge: 2
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
Produkt ist nicht verfügbar
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.8 EUR
5+29.65 EUR
10+29.17 EUR
25+28.54 EUR
50+28.08 EUR
100+27.62 EUR
250+27.33 EUR
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AUIRF4905L AUIRF4905S%2CL.pdf
AUIRF4905L
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
Produkt ist nicht verfügbar
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.91 EUR
10+34.62 EUR
25+32.55 EUR
100+30.28 EUR
250+29.19 EUR
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.89 EUR
10+10.24 EUR
100+8.34 EUR
Mindestbestellmenge: 2
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S29GL01GS11TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS11TFV020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 110 Stücke:
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Anzahl Preis
1+24.6 EUR
10+22.83 EUR
25+22.12 EUR
91+21.12 EUR
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FZ675R65KE4NPSA1 Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01
FZ675R65KE4NPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 6.5KV 675A 2.4MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
auf Bestellung 5 Stücke:
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Anzahl Preis
1+2276.07 EUR
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IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
auf Bestellung 32555 Stücke:
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Anzahl Preis
98+4.55 EUR
Mindestbestellmenge: 98
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IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFB7434GPBF IR_PartNumberingSystem.pdf
IRFB7434GPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
auf Bestellung 2 Stücke:
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Anzahl Preis
2+222.84 EUR
Mindestbestellmenge: 2
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CY8C4148AZES595TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4148AZES595TXUMA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
136+3.27 EUR
Mindestbestellmenge: 136
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AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRL1404ZS INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw
AUIRL1404ZS
Hersteller: Infineon Technologies
Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
156+2.87 EUR
Mindestbestellmenge: 156
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FS1000R08A7P3BHPSA1 infineon-fs1000r08a7p3b-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: IGBT MOD 750V 600A AGHDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+592.75 EUR
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