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AUIRFZ44N AUIRFZ44N Infineon Technologies AUIRFZ44N.pdf Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44NS AUIRFZ44NS Infineon Technologies AUIRFZ44NS%2CNL.pdf Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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TLE95633QXWJXUMA1 Infineon Technologies Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
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IRFBL3315 IRFBL3315 Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH 150V 21A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Supplier Device Package: Super D2-Pak
Drain to Source Voltage (Vdss): 150 V
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TDA22561XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
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AUIRF4905L AUIRF4905L Infineon Technologies AUIRF4905S%2CL.pdf Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ48N AUIRFZ48N Infineon Technologies auirfz48n.pdf?fileId=5546d462533600a4015355ba098d150e Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
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CY7C1361C-100AXC CY7C1361C-100AXC Infineon Technologies Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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FF06MR12A04MA2AKSA1 FF06MR12A04MA2AKSA1 Infineon Technologies infineon-ff06mr12a04ma2-datasheet-en.pdf Description: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
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IPB65R420CFDATMA1 IPB65R420CFDATMA1 Infineon Technologies IPx65R420CFD.pdf Description: MOSFET N-CH 650V 8.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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AUIRLR3410TRL AUIRLR3410TRL Infineon Technologies IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Qualification: AEC-Q101
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CYT3DLABABQ1AESGS CYT3DLABABQ1AESGS Infineon Technologies Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
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CYT4DNJBACQ1BZSGS CYT4DNJBACQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBACQ1BZSGST CYT4DNJBACQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBBCQ1BZSGS CYT4DNJBBCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBBCQ1BZSGST CYT4DNJBBCQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBGCQ1BZSGS CYT4DNJBGCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBFCQ1BZSGS CYT4DNJBFCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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CYT4DNJBDCQ1BZSGS CYT4DNJBDCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXTMA1 XMC1201Q040F0200ABXTMA1 Infineon Technologies Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 35
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XMC1302Q040X0200ABXTMA1 XMC1302Q040X0200ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
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XMC1403Q040X0200AAXTMA1 XMC1403Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1404Q048X0200AAXTMA1 XMC1404Q048X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
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XMC1403Q064X0200AAXTMA1 XMC1403Q064X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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XMC1404Q064X0200AAXTMA1 XMC1404Q064X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Produkt ist nicht verfügbar
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XMC1404Q040X0200AAXTMA1 XMC1404Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Produkt ist nicht verfügbar
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XMC1402Q040X0200AAXTMA1 XMC1402Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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CYW20733A3KFB1GT CYW20733A3KFB1GT Infineon Technologies CYW20733_RevS_11-9-17.pdf Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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IRF540ZLPBF IRF540ZLPBF Infineon Technologies irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6 Description: IRF540Z - 36A, 100V, 0.0265OHM,
Packaging: Bulk
DigiKey Programmable: Not Verified
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IMWH170R450M1XKSA1 IMWH170R450M1XKSA1 Infineon Technologies Infineon-IMWH170R450M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bedb61513 Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
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TC277T64F200SDCLXUMA2 TC277T64F200SDCLXUMA2 Infineon Technologies Infineon-TC27x_DS_Addendum-DataSheet-v01_10-EN.pdf?fileId=5546d4627883d7e00178b64a0d244053 Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
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TC397XP256F300SBDKXUMA2 TC397XP256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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TC397XP256F300SBDKXUMA2 TC397XP256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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IGL65R140D2XUMA1 IGL65R140D2XUMA1 Infineon Technologies 448_IGL65R140D2.pdf Description: IGL65R140D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
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IGL65R140D2XUMA1 IGL65R140D2XUMA1 Infineon Technologies 448_IGL65R140D2.pdf Description: IGL65R140D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
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IGL65R110D2XUMA1 IGL65R110D2XUMA1 Infineon Technologies 448_IGL65R110D2.pdf Description: IGL65R110D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGL65R110D2XUMA1 IGL65R110D2XUMA1 Infineon Technologies 448_IGL65R110D2.pdf Description: IGL65R110D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
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IGL65R080D2XUMA1 IGL65R080D2XUMA1 Infineon Technologies 448_IGL65R080D2.pdf Description: IGL65R080D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
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IGL65R080D2XUMA1 IGL65R080D2XUMA1 Infineon Technologies 448_IGL65R080D2.pdf Description: IGL65R080D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
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IGL65R055D2XUMA1 IGL65R055D2XUMA1 Infineon Technologies 448_IGL65R055D2.pdf Description: IGL65R055D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGL65R055D2XUMA1 IGL65R055D2XUMA1 Infineon Technologies 448_IGL65R055D2.pdf Description: IGL65R055D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IPW65R040CM8XKSA1 IPW65R040CM8XKSA1 Infineon Technologies Infineon-IPW65R040CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9b8a060d2 Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
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S25FL512SDSBHVC13 S25FL512SDSBHVC13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
Produkt ist nicht verfügbar
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IRG4BC30S-STRLP IRG4BC30S-STRLP Infineon Technologies irg4bc30s-s.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRG4BC30S-STRLP IRG4BC30S-STRLP Infineon Technologies irg4bc30s-s.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRG4PC30FPBF IRG4PC30FPBF Infineon Technologies IRSDS10266-1.pdf?t.download=true&u=5oefqw Description: IGBT
Packaging: Bulk
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KP219F1804XTMA1 Infineon Technologies Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AUIRLZ44ZL AUIRLZ44ZL Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C1370KV25-167BZI CY7C1370KV25-167BZI Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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PEF24470HV1.3 PEF24470HV1.3 Infineon Technologies Description: MTSI-XL SWITCHING
Packaging: Bulk
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1EDI303YASEVALBOARDTOBO1 1EDI303YASEVALBOARDTOBO1 Infineon Technologies Infineon-1EDI3035-1EDI3038AS-demoboard-UserManual-v01_40-EN.pdf?fileId=8ac78c8c90530b3a01910fe599d86a82 Description: EVAL BOARD FOR 1EDI3035AS
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
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FZ1400R33HE4BPSA1 FZ1400R33HE4BPSA1 Infineon Technologies Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
auf Bestellung 4 Stücke:
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1+3120.27 EUR
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IRF7483MTRPBF IRF7483MTRPBF Infineon Technologies IRSD-S-A0001021909-1.pdf?t.download=true&u=5oefqw Description: IRF7483 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
auf Bestellung 3799 Stücke:
Lieferzeit 10-14 Tag (e)
205+2.2 EUR
Mindestbestellmenge: 205
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IRFR3711TRLPBF IRFR3711TRLPBF Infineon Technologies irfr3711pbf.pdf?fileId=5546d462533600a401535631c10020d0 Description: MOSFET N-CH 20V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Produkt ist nicht verfügbar
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IRFR3711TRLPBF IRFR3711TRLPBF Infineon Technologies irfr3711pbf.pdf?fileId=5546d462533600a401535631c10020d0 Description: MOSFET N-CH 20V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
auf Bestellung 6000 Stücke:
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415+1.09 EUR
Mindestbestellmenge: 415
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CY9BF416RPMC-G-JNE1 CY9BF416RPMC-G-JNE1 Infineon Technologies download Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
Produkt ist nicht verfügbar
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CY9BF416RPMC-GE1 CY9BF416RPMC-GE1 Infineon Technologies download Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
Produkt ist nicht verfügbar
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IRFP450PBF IRFP450PBF Infineon Technologies 91233.pdf Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF840PBF IRF840PBF Infineon Technologies irf840_SiHF840_RevD_5-2-16.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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GS0650186LRMRXUSA1 GS0650186LRMRXUSA1 Infineon Technologies Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec Description: GS-065-018-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
250+4.75 EUR
Mindestbestellmenge: 250
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AUIRFZ44N AUIRFZ44N.pdf
AUIRFZ44N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ44NS AUIRFZ44NS%2CNL.pdf
AUIRFZ44NS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE95633QXWJXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFBL3315 IR_PartNumberingSystem.pdf
IRFBL3315
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A SUPER D2PAK
Packaging: Tube
Package / Case: Super D2-Pak
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Supplier Device Package: Super D2-Pak
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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TDA22561XUMA1
Hersteller: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AUIRF4905L AUIRF4905S%2CL.pdf
AUIRF4905L
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ48N auirfz48n.pdf?fileId=5546d462533600a4015355ba098d150e
AUIRFZ48N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C1361C-100AXC Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY7C1361C-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF06MR12A04MA2AKSA1 infineon-ff06mr12a04ma2-datasheet-en.pdf
FF06MR12A04MA2AKSA1
Hersteller: Infineon Technologies
Description: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+348 EUR
12+295.17 EUR
36+281.27 EUR
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IPB65R420CFDATMA1 IPx65R420CFD.pdf
IPB65R420CFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Produkt ist nicht verfügbar
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AUIRLR3410TRL IRSD-S-A0000226357-1.pdf?t.download=true&u=5oefqw
AUIRLR3410TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CYT3DLABABQ1AESGS Infineon-CYT3DL_TRAVEO_TM_T2G_32-BIT_AUTOMOTIVE_MCU_BASED_ON_ARM_R_CORTEX_R_-M7_SINGLE-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c869190210186f0ccf72f3fd3
CYT3DLABABQ1AESGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
Produkt ist nicht verfügbar
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CYT4DNJBACQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBACQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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CYT4DNJBACQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBACQ1BZSGST
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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CYT4DNJBBCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBBCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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CYT4DNJBBCQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBBCQ1BZSGST
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT4DNJBGCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBGCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT4DNJBFCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBFCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT4DNJBDCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBDCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tray
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1201Q040F0200ABXTMA1 Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0
XMC1201Q040F0200ABXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1302Q040X0200ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q040X0200ABXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1403Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q040X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404Q048X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q048X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1403Q064X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404Q064X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q064X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q040X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Produkt ist nicht verfügbar
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CYW20733A3KFB1GT CYW20733_RevS_11-9-17.pdf
CYW20733A3KFB1GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.32 EUR
10+5.46 EUR
25+5.16 EUR
100+4.75 EUR
250+4.51 EUR
500+4.33 EUR
1000+4.17 EUR
Mindestbestellmenge: 3
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IRF540ZLPBF irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6
IRF540ZLPBF
Hersteller: Infineon Technologies
Description: IRF540Z - 36A, 100V, 0.0265OHM,
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+1.48 EUR
Mindestbestellmenge: 50
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IMWH170R450M1XKSA1 Infineon-IMWH170R450M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bedb61513
IMWH170R450M1XKSA1
Hersteller: Infineon Technologies
Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.81 EUR
30+6.9 EUR
120+6.16 EUR
Mindestbestellmenge: 2
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TC277T64F200SDCLXUMA2 Infineon-TC27x_DS_Addendum-DataSheet-v01_10-EN.pdf?fileId=5546d4627883d7e00178b64a0d244053
TC277T64F200SDCLXUMA2
Hersteller: Infineon Technologies
Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Produkt ist nicht verfügbar
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TC397XP256F300SBDKXUMA2 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Produkt ist nicht verfügbar
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TC397XP256F300SBDKXUMA2 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
auf Bestellung 804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+99.76 EUR
10+82.57 EUR
25+78.28 EUR
100+73.56 EUR
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IGL65R140D2XUMA1 448_IGL65R140D2.pdf
IGL65R140D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R140D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
Produkt ist nicht verfügbar
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IGL65R140D2XUMA1 448_IGL65R140D2.pdf
IGL65R140D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R140D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
auf Bestellung 2965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.63 EUR
10+3.69 EUR
100+2.58 EUR
500+2.28 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGL65R110D2XUMA1 448_IGL65R110D2.pdf
IGL65R110D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R110D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Produkt ist nicht verfügbar
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IGL65R110D2XUMA1 448_IGL65R110D2.pdf
IGL65R110D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R110D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Power Dissipation (Max): 59W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.56 EUR
10+4.33 EUR
100+3.13 EUR
500+2.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGL65R080D2XUMA1 448_IGL65R080D2.pdf
IGL65R080D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R080D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Produkt ist nicht verfügbar
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IGL65R080D2XUMA1 448_IGL65R080D2.pdf
IGL65R080D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R080D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
auf Bestellung 2884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.32 EUR
10+5.55 EUR
100+3.98 EUR
500+3.86 EUR
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IGL65R055D2XUMA1 448_IGL65R055D2.pdf
IGL65R055D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R055D2XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Produkt ist nicht verfügbar
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IGL65R055D2XUMA1 448_IGL65R055D2.pdf
IGL65R055D2XUMA1
Hersteller: Infineon Technologies
Description: IGL65R055D2XUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
auf Bestellung 2753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.94 EUR
10+6.7 EUR
100+4.9 EUR
Mindestbestellmenge: 2
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IPW65R040CM8XKSA1 Infineon-IPW65R040CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9b8a060d2
IPW65R040CM8XKSA1
Hersteller: Infineon Technologies
Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.41 EUR
30+7.24 EUR
120+6.1 EUR
Mindestbestellmenge: 2
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S25FL512SDSBHVC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SDSBHVC13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 64M x 8
Produkt ist nicht verfügbar
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IRG4BC30S-STRLP irg4bc30s-s.pdf
IRG4BC30S-STRLP
Hersteller: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30S-STRLP irg4bc30s-s.pdf
IRG4BC30S-STRLP
Hersteller: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+2.94 EUR
Mindestbestellmenge: 154
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IRG4PC30FPBF IRSDS10266-1.pdf?t.download=true&u=5oefqw
IRG4PC30FPBF
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
auf Bestellung 1002 Stücke:
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Anzahl Preis
140+3.23 EUR
Mindestbestellmenge: 140
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KP219F1804XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AUIRLZ44ZL fundamentals-of-power-semiconductors
AUIRLZ44ZL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C1370KV25-167BZI download
CY7C1370KV25-167BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF24470HV1.3
PEF24470HV1.3
Hersteller: Infineon Technologies
Description: MTSI-XL SWITCHING
Packaging: Bulk
auf Bestellung 1560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+102.9 EUR
Mindestbestellmenge: 4
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1EDI303YASEVALBOARDTOBO1 Infineon-1EDI3035-1EDI3038AS-demoboard-UserManual-v01_40-EN.pdf?fileId=8ac78c8c90530b3a01910fe599d86a82
1EDI303YASEVALBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1EDI3035AS
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: On-Board LEDs
Embedded: No
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+226.92 EUR
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FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
FZ1400R33HE4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3120.27 EUR
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IRF7483MTRPBF IRSD-S-A0001021909-1.pdf?t.download=true&u=5oefqw
IRF7483MTRPBF
Hersteller: Infineon Technologies
Description: IRF7483 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
auf Bestellung 3799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
205+2.2 EUR
Mindestbestellmenge: 205
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IRFR3711TRLPBF irfr3711pbf.pdf?fileId=5546d462533600a401535631c10020d0
IRFR3711TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Produkt ist nicht verfügbar
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IRFR3711TRLPBF irfr3711pbf.pdf?fileId=5546d462533600a401535631c10020d0
IRFR3711TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 100A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
415+1.09 EUR
Mindestbestellmenge: 415
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CY9BF416RPMC-G-JNE1 download
CY9BF416RPMC-G-JNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
Produkt ist nicht verfügbar
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CY9BF416RPMC-GE1 download
CY9BF416RPMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 103
Produkt ist nicht verfügbar
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IRFP450PBF 91233.pdf
IRFP450PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
IRF840PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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GS0650186LRMRXUSA1 Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec
GS0650186LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+4.75 EUR
Mindestbestellmenge: 250
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