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CY91F528YWCPB-GSE1 CY91F528YWCPB-GSE1 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
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S25FL256SAGBAEA03 S25FL256SAGBAEA03 Infineon Technologies Infineon-S25FL128S_S25FL256S_Military_128_Mbit_(16_Mbyte)_256_Mbit_(32_Mbyte)_3.0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7bccb7094 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPM1311-48LDXIT CYPM1311-48LDXIT Infineon Technologies Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
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CY3250-LED04QFN Infineon Technologies CY3250_QFN_POD_Kits.pdf Description: ICE POD DEBUG CY8CLED04
Packaging: Bulk
Accessory Type: Emulator Flex Pod Kit
Utilized IC / Part: CY3215-DK, CY8CLED04
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BAS3010B03WE6327HTSA1 BAS3010B03WE6327HTSA1 Infineon Technologies bas3010bseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313e278750113e29a03a70005 Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
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ESD159B1W0201E6327XTSA1 ESD159B1W0201E6327XTSA1 Infineon Technologies infineon-esd159-b1-w0201-datasheet-en.pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
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ESD159B1W0201E6327XTSA1 ESD159B1W0201E6327XTSA1 Infineon Technologies infineon-esd159-b1-w0201-datasheet-en.pdf Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 IPB020N03LF2SATMA1 Infineon Technologies infineon-ipb020n03lf2s-datasheet-en.pdf Description: IPB020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IPB020N03LF2SATMA1 IPB020N03LF2SATMA1 Infineon Technologies infineon-ipb020n03lf2s-datasheet-en.pdf Description: IPB020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IPM018N10NM5LF2AUMA1 IPM018N10NM5LF2AUMA1 Infineon Technologies infineon-ipm018n10nm5lf2-datasheet-en.pdf Description: IPM018N10NM5LF2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Supplier Device Package: PG-HSOG-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
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IPM018N10NM5LF2AUMA1 IPM018N10NM5LF2AUMA1 Infineon Technologies infineon-ipm018n10nm5lf2-datasheet-en.pdf Description: IPM018N10NM5LF2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Supplier Device Package: PG-HSOG-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
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IPF018N10NM5LF2ATMA1 IPF018N10NM5LF2ATMA1 Infineon Technologies Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17 Description: IPF018N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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IPF018N10NM5LF2ATMA1 IPF018N10NM5LF2ATMA1 Infineon Technologies Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17 Description: IPF018N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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2+9.72 EUR
10+6.53 EUR
100+4.73 EUR
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IRFP450PBF IRFP450PBF Infineon Technologies 91233.pdf Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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TLE9185QXWV33XUMA1 TLE9185QXWV33XUMA1 Infineon Technologies Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971 Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE9185QXWV33XUMA1 TLE9185QXWV33XUMA1 Infineon Technologies Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971 Description: BLDC_MOTOR_CONTROL
Packaging: Tube
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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2500+3.13 EUR
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TLE9185QXWXUMA1 TLE9185QXWXUMA1 Infineon Technologies Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4 Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9185QXWXUMA1 TLE9185QXWXUMA1 Infineon Technologies Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4 Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
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4+5.77 EUR
10+4.36 EUR
25+4 EUR
100+3.61 EUR
250+3.43 EUR
500+3.32 EUR
1000+3.22 EUR
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TLE9564QXWXUMA1 TLE9564QXWXUMA1 Infineon Technologies Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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2500+3.24 EUR
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TLE9564QXWXUMA1 TLE9564QXWXUMA1 Infineon Technologies Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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Lieferzeit 10-14 Tag (e)
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10+4.5 EUR
25+4.14 EUR
100+3.74 EUR
250+3.54 EUR
500+3.43 EUR
1000+3.34 EUR
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TLE95623QXJXUMA1 TLE95623QXJXUMA1 Infineon Technologies Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8 Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE95623QXJXUMA1 TLE95623QXJXUMA1 Infineon Technologies Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8 Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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3+6.44 EUR
10+4.88 EUR
25+4.49 EUR
100+4.06 EUR
250+3.86 EUR
500+3.73 EUR
1000+3.63 EUR
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IGC019S06S1XTMA1 IGC019S06S1XTMA1 Infineon Technologies DS_IGC019S06S1_1_1.pdf Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
auf Bestellung 3251 Stücke:
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3+6.53 EUR
10+4.31 EUR
100+3.04 EUR
500+2.78 EUR
Mindestbestellmenge: 3
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IRF7470TRPBF IRF7470TRPBF Infineon Technologies irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18 description Description: MOSFET N-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Produkt ist nicht verfügbar
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IRF7470TRPBF IRF7470TRPBF Infineon Technologies irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18 description Description: MOSFET N-CH 40V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Produkt ist nicht verfügbar
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IRF7468TRPBF IRF7468TRPBF Infineon Technologies irf7468pbf.pdf?fileId=5546d462533600a4015355ff09b41c0e Description: MOSFET N-CH 40V 9.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Produkt ist nicht verfügbar
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IPDQ60T022S7XTMA1 IPDQ60T022S7XTMA1 Infineon Technologies IPDQ60T022S7.pdf Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
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IPDQ60T022S7XTMA1 IPDQ60T022S7XTMA1 Infineon Technologies IPDQ60T022S7.pdf Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
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IPQC60T022S7AXTMA1 IPQC60T022S7AXTMA1 Infineon Technologies IPQC60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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IPQC60T022S7AXTMA1 IPQC60T022S7AXTMA1 Infineon Technologies IPQC60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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IPDQ60T022S7AXTMA1 IPDQ60T022S7AXTMA1 Infineon Technologies IPDQ60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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IPDQ60T022S7AXTMA1 IPDQ60T022S7AXTMA1 Infineon Technologies IPDQ60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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BTS70202EPADAUGHBRDTOBO1 BTS70202EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7020-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3 Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
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IPS50R520CP IPS50R520CP Infineon Technologies IPS50R520CP.pdf Description: MOSFET N-CH 550V 7.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
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AUIRFU8403-701TRL AUIRFU8403-701TRL Infineon Technologies Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO251-3-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
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AN983X-AH-T-22 AN983X-AH-T-22 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
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AN983X-AH-T-22 AN983X-AH-T-22 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR2905ZTR AUIRFR2905ZTR Infineon Technologies auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EVAL2EDGANINV1KWTOBO1 EVAL2EDGANINV1KWTOBO1 Infineon Technologies infineon-ug-2025-07-eval-2edgan-inv-1kw-usermanual-en.pdf Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
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CYPET131XQMA1 CYPET131XQMA1 Infineon Technologies Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96 Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
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IDWD10G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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IDDD04G65C6XTMA1 IDDD04G65C6XTMA1 Infineon Technologies Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03 Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
auf Bestellung 4628 Stücke:
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IRS2117PBF IRS2117PBF Infineon Technologies irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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146+3.12 EUR
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IRS2117PBF IRS2117PBF Infineon Technologies irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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CYALKIT-E03 CYALKIT-E03 Infineon Technologies Infineon-CYALKIT-E03_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd8d0313ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EXPANSION PACK FOR CYALKIT-E02
Packaging: Bulk
Function: Bluetooth Low Energy (BLE)
Type: RF
Contents: Board(s)
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Platform: BLE-Beacon™
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EVALS26HL512TTOBO1 EVALS26HL512TTOBO1 Infineon Technologies EVALS26HL512TTOBO1.pdf Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
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CYPD1120-35FNXIT CYPD1120-35FNXIT Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 35-WLCSP (3.23x2.10)
Number of I/O: 31
DigiKey Programmable: Not Verified
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TLE4675GATMA1 TLE4675GATMA1 Infineon Technologies Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46 Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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IMW65R075M2HXKSA1 IMW65R075M2HXKSA1 Infineon Technologies infineon-imw65r050m2h-datasheet-en.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4 Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
auf Bestellung 430 Stücke:
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2+10.03 EUR
30+5.73 EUR
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S29GL256S11TFVV10 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256Mb (16M x 16)
Produkt ist nicht verfügbar
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BSZ146N10LS5ATMA1 BSZ146N10LS5ATMA1 Infineon Technologies infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc Description: MOSFET N-CH 100V 44A TSDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 7963 Stücke:
Lieferzeit 10-14 Tag (e)
356+1.25 EUR
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 1975 Stücke:
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250+1.75 EUR
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AUIRFR2905Z AUIRFR2905Z Infineon Technologies auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.47 EUR
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TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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24+0.75 EUR
26+0.7 EUR
100+0.63 EUR
250+0.58 EUR
500+0.55 EUR
1000+0.52 EUR
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.95 EUR
5+6.23 EUR
10+5.97 EUR
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50+5.43 EUR
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Produkt ist nicht verfügbar
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.47 EUR
5+8.53 EUR
10+8.17 EUR
25+7.75 EUR
50+7.47 EUR
100+7.2 EUR
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CY91F528YWCPB-GSE1 download
CY91F528YWCPB-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGBAEA03 Infineon-S25FL128S_S25FL256S_Military_128_Mbit_(16_Mbyte)_256_Mbit_(32_Mbyte)_3.0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7bccb7094
S25FL256SAGBAEA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPM1311-48LDXIT Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
CYPM1311-48LDXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3250-LED04QFN CY3250_QFN_POD_Kits.pdf
Hersteller: Infineon Technologies
Description: ICE POD DEBUG CY8CLED04
Packaging: Bulk
Accessory Type: Emulator Flex Pod Kit
Utilized IC / Part: CY3215-DK, CY8CLED04
Produkt ist nicht verfügbar
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BAS3010B03WE6327HTSA1 bas3010bseries.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a304313e278750113e29a03a70005
BAS3010B03WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 1A PGSOD3233D
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2245+0.2 EUR
Mindestbestellmenge: 2245
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ESD159B1W0201E6327XTSA1 infineon-esd159-b1-w0201-datasheet-en.pdf
ESD159B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
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ESD159B1W0201E6327XTSA1 infineon-esd159-b1-w0201-datasheet-en.pdf
ESD159B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 infineon-ipb020n03lf2s-datasheet-en.pdf
IPB020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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IPB020N03LF2SATMA1 infineon-ipb020n03lf2s-datasheet-en.pdf
IPB020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+2.86 EUR
100+1.97 EUR
Mindestbestellmenge: 4
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IPM018N10NM5LF2AUMA1 infineon-ipm018n10nm5lf2-datasheet-en.pdf
IPM018N10NM5LF2AUMA1
Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Supplier Device Package: PG-HSOG-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Produkt ist nicht verfügbar
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IPM018N10NM5LF2AUMA1 infineon-ipm018n10nm5lf2-datasheet-en.pdf
IPM018N10NM5LF2AUMA1
Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Supplier Device Package: PG-HSOG-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Produkt ist nicht verfügbar
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IPF018N10NM5LF2ATMA1 Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17
IPF018N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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IPF018N10NM5LF2ATMA1 Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17
IPF018N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
10+6.53 EUR
100+4.73 EUR
Mindestbestellmenge: 2
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IRFP450PBF 91233.pdf
IRFP450PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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TLE9185QXWV33XUMA1 Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971
TLE9185QXWV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9185QXWV33XUMA1 Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971
TLE9185QXWV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tube
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.13 EUR
Mindestbestellmenge: 2500
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TLE9185QXWXUMA1 Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4
TLE9185QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9185QXWXUMA1 Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4
TLE9185QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.77 EUR
10+4.36 EUR
25+4 EUR
100+3.61 EUR
250+3.43 EUR
500+3.32 EUR
1000+3.22 EUR
Mindestbestellmenge: 4
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TLE9564QXWXUMA1 Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff
TLE9564QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+3.24 EUR
Mindestbestellmenge: 2500
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TLE9564QXWXUMA1 Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff
TLE9564QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+4.5 EUR
25+4.14 EUR
100+3.74 EUR
250+3.54 EUR
500+3.43 EUR
1000+3.34 EUR
Mindestbestellmenge: 3
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TLE95623QXJXUMA1 Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8
TLE95623QXJXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE95623QXJXUMA1 Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8
TLE95623QXJXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
10+4.88 EUR
25+4.49 EUR
100+4.06 EUR
250+3.86 EUR
500+3.73 EUR
1000+3.63 EUR
Mindestbestellmenge: 3
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IGC019S06S1XTMA1 DS_IGC019S06S1_1_1.pdf
IGC019S06S1XTMA1
Hersteller: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 30 V
auf Bestellung 3251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
10+4.31 EUR
100+3.04 EUR
500+2.78 EUR
Mindestbestellmenge: 3
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IRF7470TRPBF description irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18
IRF7470TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Produkt ist nicht verfügbar
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IRF7470TRPBF description irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18
IRF7470TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Produkt ist nicht verfügbar
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IRF7468TRPBF irf7468pbf.pdf?fileId=5546d462533600a4015355ff09b41c0e
IRF7468TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 9.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Produkt ist nicht verfügbar
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IPDQ60T022S7XTMA1 IPDQ60T022S7.pdf
IPDQ60T022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60T022S7XTMA1 IPDQ60T022S7.pdf
IPDQ60T022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.93 EUR
10+12.45 EUR
25+11.58 EUR
Mindestbestellmenge: 2
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IPQC60T022S7AXTMA1 IPQC60T022S7A_Rev2.0_11-30-23.pdf
IPQC60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC60T022S7AXTMA1 IPQC60T022S7A_Rev2.0_11-30-23.pdf
IPQC60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.4 EUR
10+12.84 EUR
25+11.95 EUR
100+10.97 EUR
Mindestbestellmenge: 2
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IPDQ60T022S7AXTMA1 IPDQ60T022S7A_Rev2.0_11-30-23.pdf
IPDQ60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60T022S7AXTMA1 IPDQ60T022S7A_Rev2.0_11-30-23.pdf
IPDQ60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.4 EUR
10+12.84 EUR
25+11.95 EUR
100+10.97 EUR
Mindestbestellmenge: 2
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BTS70202EPADAUGHBRDTOBO1 Infineon-BTS7020-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3
BTS70202EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+78.43 EUR
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IPS50R520CP IPS50R520CP.pdf
IPS50R520CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 7.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+456.03 EUR
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AUIRFU8403-701TRL
AUIRFU8403-701TRL
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO251-3-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AN983X-AH-T-22 fundamentals-of-power-semiconductors
AN983X-AH-T-22
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
121+3.77 EUR
Mindestbestellmenge: 121
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AN983X-AH-T-22 fundamentals-of-power-semiconductors
AN983X-AH-T-22
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR2905ZTR auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
AUIRFR2905ZTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EVAL2EDGANINV1KWTOBO1 infineon-ug-2025-07-eval-2edgan-inv-1kw-usermanual-en.pdf
EVAL2EDGANINV1KWTOBO1
Hersteller: Infineon Technologies
Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+708.93 EUR
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CYPET131XQMA1 Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96
CYPET131XQMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
27+0.67 EUR
30+0.6 EUR
Mindestbestellmenge: 19
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IDWD10G120C5XKSA2
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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IDDD04G65C6XTMA1 Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03
IDDD04G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Current - Average Rectified (Io): 13A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
auf Bestellung 4628 Stücke:
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Anzahl Preis
218+2.1 EUR
Mindestbestellmenge: 218
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IRS2117PBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
IRS2117PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 23363 Stücke:
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Anzahl Preis
146+3.12 EUR
Mindestbestellmenge: 146
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IRS2117PBF irs2117pbf.pdf?fileId=5546d462533600a4015356767f2127b9
IRS2117PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 75ns, 35ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYALKIT-E03 Infineon-CYALKIT-E03_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd8d0313ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYALKIT-E03
Hersteller: Infineon Technologies
Description: EXPANSION PACK FOR CYALKIT-E02
Packaging: Bulk
Function: Bluetooth Low Energy (BLE)
Type: RF
Contents: Board(s)
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Platform: BLE-Beacon™
Produkt ist nicht verfügbar
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EVALS26HL512TTOBO1 EVALS26HL512TTOBO1.pdf
EVALS26HL512TTOBO1
Hersteller: Infineon Technologies
Description: EVALS26HL512TTOBO1
Packaging: Tray
Function: FLASH
Type: Memory
Contents: Board(s)
Utilized IC / Part: S26HL512T
Platform: Pmod™
auf Bestellung 7 Stücke:
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Anzahl Preis
1+32.08 EUR
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CYPD1120-35FNXIT
CYPD1120-35FNXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 35-WLCSP (3.23x2.10)
Number of I/O: 31
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4675GATMA1 Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46
TLE4675GATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 6940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
167+2.74 EUR
Mindestbestellmenge: 167
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IMW65R075M2HXKSA1 infineon-imw65r050m2h-datasheet-en.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4
IMW65R075M2HXKSA1
Hersteller: Infineon Technologies
Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
auf Bestellung 430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.03 EUR
30+5.73 EUR
120+4.79 EUR
Mindestbestellmenge: 2
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S29GL256S11TFVV10 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
Hersteller: Infineon Technologies
Description: PNOR
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256Mb (16M x 16)
Produkt ist nicht verfügbar
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BSZ146N10LS5ATMA1 infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc
BSZ146N10LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 44A TSDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 7963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
356+1.25 EUR
Mindestbestellmenge: 356
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Hersteller: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Hersteller: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+2.28 EUR
25+2.08 EUR
100+1.86 EUR
250+1.75 EUR
500+1.69 EUR
1000+1.64 EUR
Mindestbestellmenge: 6
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AUIRFR2905Z auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
AUIRFR2905Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE496048MS2XTSA1
Hersteller: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.47 EUR
Mindestbestellmenge: 3000
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TLE496048MS2XTSA1
Hersteller: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
24+0.75 EUR
26+0.7 EUR
100+0.63 EUR
250+0.58 EUR
500+0.55 EUR
1000+0.52 EUR
Mindestbestellmenge: 21
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Hersteller: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
5+6.23 EUR
10+5.97 EUR
25+5.65 EUR
50+5.43 EUR
100+5.23 EUR
500+4.83 EUR
Mindestbestellmenge: 3
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Hersteller: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
Produkt ist nicht verfügbar
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Hersteller: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.47 EUR
5+8.53 EUR
10+8.17 EUR
25+7.75 EUR
50+7.47 EUR
100+7.2 EUR
Mindestbestellmenge: 2
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