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S26KS512SDPBHB023 S26KS512SDPBHB023 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20719B1KUMLGT Infineon Technologies Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 40
Modulation: 8-DPSK, 4-DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
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TDA18250BHN/C1K TDA18250BHN/C1K Infineon Technologies TDA18250AHN_SDS.pdf Description: TDA18250CabSilicTuner
Packaging: Tray
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FF150R12KE3GB2HOSA1 FF150R12KE3GB2HOSA1 Infineon Technologies FF150R12KE3G.pdf Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2 Infineon Technologies IRS2136DSTRPBFXUMA2.pdf Description: IRS2136DSTRPBFXUMA2
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2 Infineon Technologies IRS2136DSTRPBFXUMA2.pdf Description: IRS2136DSTRPBFXUMA2
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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CY7C10612DV33-10ZSXI Infineon Technologies Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tube
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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2ED3144MC12LXUMA1 2ED3144MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3144MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3144MC12LXUMA1 2ED3144MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3144MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3141MC12LXUMA1 2ED3141MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3141MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3141MC12LXUMA1 2ED3141MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3141MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3147MC12LXUMA1 2ED3147MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3147MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Produkt ist nicht verfügbar
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2ED3147MC12LXUMA1 2ED3147MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3147MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3142MC12LXUMA1 2ED3142MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3142MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Produkt ist nicht verfügbar
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2ED3142MC12LXUMA1 2ED3142MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3142MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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2ED3143MC12LXUMA1 2ED3143MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3143MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Produkt ist nicht verfügbar
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2ED3143MC12LXUMA1 2ED3143MC12LXUMA1 Infineon Technologies infineon-2ed314xmc12l-datasheet-en.pdf Description: 2ED3143MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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CYW43143KMLGT CYW43143KMLGT Infineon Technologies Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral& Description: IC RF TXRX+MCU WIFI 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW43143KMLGT CYW43143KMLGT Infineon Technologies Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral& Description: IC RF TXRX+MCU WIFI 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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100+9.47 EUR
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1000+8.33 EUR
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ISC088N08NM6ATMA1 ISC088N08NM6ATMA1 Infineon Technologies Infineon-ISC088N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f5b77422d42 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
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ISC088N08NM6ATMA1 ISC088N08NM6ATMA1 Infineon Technologies Infineon-ISC088N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f5b77422d42 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
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500+1.31 EUR
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ISC018N08NM6ATMA1 ISC018N08NM6ATMA1 Infineon Technologies infineon-isc018n08nm6-datasheet-en.pdf?fileId=8ac78c8c8c3de074018c3f9382112e16 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
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ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 Infineon Technologies Infineon-ISC151N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f802c4e2ddb Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 40 V
Produkt ist nicht verfügbar
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ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 Infineon Technologies Infineon-ISC151N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f802c4e2ddb Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 40 V
Produkt ist nicht verfügbar
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IRF830PBF Infineon Technologies irl620.pdf Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
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IRF8304MTRPBF IRF8304MTRPBF Infineon Technologies irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8308MTRPBF IRF8308MTRPBF Infineon Technologies irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61 Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Produkt ist nicht verfügbar
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IR21271PBF IR21271PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IR21271PBF IR21271PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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DEMOFX20MIPI001TOBO1 DEMOFX20MIPI001TOBO1 Infineon Technologies infineon-ez-usb-fx20-demo-board-demo-fx20-mipi-001-usermanual-en.pdf Description: EVAL BOARD FOR CYUSB402X
Packaging: Box
Function: USB
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CYUSB402x
Embedded: Yes, FPGA
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S6J332DJEESE20000 S6J332DJEESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
Produkt ist nicht verfügbar
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IDFW80C65D1XKSA1 IDFW80C65D1XKSA1 Infineon Technologies Infineon-IDFW80C65D1-DataSheet-v02_02-EN.pdf?fileId=5546d46274cf54d50174da579c702296 Description: DIODE ARR GP 650V 74A TO247-3-AI
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 73 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 74A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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PSE846GPS2DBZC4XQSA1 PSE846GPS2DBZC4XQSA1 Infineon Technologies infineon-psoc-edge-e8x-consumer-datasheet-datasheet-en.pdf Description: IOT-EDGE
Packaging: Tray
Package / Case: 220-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz, 400MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 5M x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: NVSRAM
Core Processor: ARM® Cortex®-M55, ARM® Ethos-U55
Data Converters: A/D 17x20b SAR; D/A 2x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: AES, Brown-out Detect/Reset, DMA, I2S, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 220-FBGA (10x10)
Number of I/O: 147
auf Bestellung 141 Stücke:
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TLE9261BQXXUMA2 TLE9261BQXXUMA2 Infineon Technologies Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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4+6.26 EUR
10+4.71 EUR
25+4.33 EUR
100+3.9 EUR
250+3.7 EUR
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IAUTN15S6N038TATMA1 IAUTN15S6N038TATMA1 Infineon Technologies Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUTN15S6N038TATMA1 IAUTN15S6N038TATMA1 Infineon Technologies Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1690 Stücke:
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2+12.51 EUR
10+9.65 EUR
25+8.92 EUR
100+8.14 EUR
250+7.77 EUR
500+7.54 EUR
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IAUTN15S6N025TATMA1 IAUTN15S6N025TATMA1 Infineon Technologies Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUTN15S6N025TATMA1 IAUTN15S6N025TATMA1 Infineon Technologies Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
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2+16.36 EUR
10+12.71 EUR
25+11.79 EUR
100+10.79 EUR
250+10.32 EUR
500+10.03 EUR
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AUIRF1010EZS AUIRF1010EZS Infineon Technologies IRSDS10898-1.pdf?t.download=true&u=5oefqw Description: AUIRF1010 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Qualification: AEC-Q101
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34+15.7 EUR
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IRF1010ZPBF IRF1010ZPBF Infineon Technologies irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d description Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C4147LQEHVS136XXQLA1 CY8C4147LQEHVS136XXQLA1 Infineon Technologies Infineon-CY8C41x7_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c956a0a470195817786015ddd Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.6V ~ 28V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 32-QFN (6x6)
Grade: Automotive
Number of I/O: 49
Qualification: AEC-Q100
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2+19.68 EUR
10+15.39 EUR
25+14.32 EUR
100+13.14 EUR
260+12.55 EUR
520+12.21 EUR
1040+11.94 EUR
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IMZA75R060M2HXKSA1 IMZA75R060M2HXKSA1 Infineon Technologies IMZA75R060M2HXKSA1.pdf Description: IMZA75R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V
auf Bestellung 470 Stücke:
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2+15.18 EUR
30+8.82 EUR
120+7.41 EUR
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GS0650302LMRXUSA1 GS0650302LMRXUSA1 Infineon Technologies Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149 Description: GS-065-030-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 250 Stücke:
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250+10.1 EUR
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GS0650302LMRXUSA1 GS0650302LMRXUSA1 Infineon Technologies Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149 Description: GS-065-030-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 478 Stücke:
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ISC300N20NM6ATMA1 ISC300N20NM6ATMA1 Infineon Technologies infineon-isc300n20nm6-datasheet-en.pdf Description: ISC300N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
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ISC300N20NM6ATMA1 ISC300N20NM6ATMA1 Infineon Technologies infineon-isc300n20nm6-datasheet-en.pdf Description: ISC300N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
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IRFP4868PBFAKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
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CY8C4147LQS-S295 CY8C4147LQS-S295 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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AUIRGSL4062D1 AUIRGSL4062D1 Infineon Technologies AUIRGB4062D1.pdf?t.download=true&u=ovmfp3 Description: IGBT
Packaging: Bulk
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CYRF9935-24LQXC CYRF9935-24LQXC Infineon Technologies 5047 Description: IC RF TXRX ISM>1GHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Current - Receiving: 14mA ~ 15mA
Data Rate (Max): 2Mbps
Current - Transmitting: 6.3mA ~ 15mA
Supplier Device Package: 24-QFN (4x4)
Modulation: GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYRF89535-68LTXC CYRF89535-68LTXC Infineon Technologies CYRF89535-68LTXC_Web.pdf Description: IC RF TXRX 2.4GHZ 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: 68-QFN (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYRF69213-40LTXC CYRF69213-40LTXC Infineon Technologies CYRF69213_April2013.pdf Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Power - Output: 4dBm
Current - Receiving: 23.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 36.6mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYRF69313-40LTXC CYRF69313-40LTXC Infineon Technologies CYRF69313_Mar2014.pdf Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
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CY8C22213-24LFI CY8C22213-24LFI Infineon Technologies CY8C22113%2C%2022213.pdf Description: IC MCU 8BIT 2KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 16
DigiKey Programmable: Not Verified
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S28HS256TGZBHB813 S28HS256TGZBHB813 Infineon Technologies infineon-s28hs256t-s28hl256t-256mb-semper-flash-octal-interface-1-8v-3-datasheet-en.pdf Description: S28HS256TGZBHB813
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 32M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRFR3303TRPBF IRFR3303TRPBF Infineon Technologies irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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IMY120R036AM2HXKSA1 IMY120R036AM2HXKSA1 Infineon Technologies infineon-imy120r036am2h-datasheet-en.pdf Description: IMY120R036AM2HXKSA1
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18.2A, 18V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.7mA
Supplier Device Package: PG-TO247-4-19
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 800 V
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IGLT65R110B2AUMA1 IGLT65R110B2AUMA1 Infineon Technologies infineon-iglt65r110b2-datasheet-en.pdf Description: GANFET N-CH 650V 14A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R110B2AUMA1 IGLT65R110B2AUMA1 Infineon Technologies infineon-iglt65r110b2-datasheet-en.pdf Description: GANFET N-CH 650V 14A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
auf Bestellung 1498 Stücke:
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2+11.75 EUR
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AUIRFZ48N AUIRFZ48N Infineon Technologies auirfz48n.pdf?fileId=5546d462533600a4015355ba098d150e Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S26KS512SDPBHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS512SDPBHB023
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20719B1KUMLGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 40
Modulation: 8-DPSK, 4-DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA18250BHN/C1K TDA18250AHN_SDS.pdf
TDA18250BHN/C1K
Hersteller: Infineon Technologies
Description: TDA18250CabSilicTuner
Packaging: Tray
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FF150R12KE3GB2HOSA1 FF150R12KE3G.pdf
FF150R12KE3GB2HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2.pdf
IRS2136DSTRPBFXUMA2
Hersteller: Infineon Technologies
Description: IRS2136DSTRPBFXUMA2
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2.pdf
IRS2136DSTRPBFXUMA2
Hersteller: Infineon Technologies
Description: IRS2136DSTRPBFXUMA2
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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CY7C10612DV33-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tube
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED3144MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3144MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3144MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
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1500+2.13 EUR
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2ED3144MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3144MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3144MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 2066 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+3.01 EUR
25+2.75 EUR
100+2.46 EUR
250+2.32 EUR
500+2.25 EUR
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2ED3141MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3141MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3141MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+2.13 EUR
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2ED3141MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3141MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3141MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 1534 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+3.01 EUR
25+2.75 EUR
100+2.46 EUR
250+2.32 EUR
500+2.25 EUR
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2ED3147MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3147MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3147MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Produkt ist nicht verfügbar
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2ED3147MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3147MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3147MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+3.01 EUR
25+2.75 EUR
100+2.46 EUR
250+2.32 EUR
500+2.25 EUR
Mindestbestellmenge: 6 Stücke
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2ED3142MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3142MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3142MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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2ED3142MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3142MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3142MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 1209 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+3.01 EUR
25+2.75 EUR
100+2.46 EUR
250+2.32 EUR
500+2.25 EUR
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2ED3143MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3143MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3143MC12LXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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2ED3143MC12LXUMA1 infineon-2ed314xmc12l-datasheet-en.pdf
2ED3143MC12LXUMA1
Hersteller: Infineon Technologies
Description: 2ED3143MC12LXUMA1
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6A, 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6A, 6.5A
Voltage - Isolation: 5700Vrms
Approval Agency: UL
Supplier Device Package: PG-DSO-14-71
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Number of Channels: 2
Voltage - Output Supply: 35V
auf Bestellung 1129 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.08 EUR
10+3.01 EUR
25+2.75 EUR
100+2.46 EUR
250+2.32 EUR
500+2.25 EUR
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CYW43143KMLGT Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral&
CYW43143KMLGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU WIFI 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+7.94 EUR
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CYW43143KMLGT Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral&
CYW43143KMLGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU WIFI 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.52 EUR
10+10.85 EUR
25+10.27 EUR
100+9.47 EUR
250+8.98 EUR
500+8.65 EUR
1000+8.33 EUR
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ISC088N08NM6ATMA1 Infineon-ISC088N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f5b77422d42
ISC088N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC088N08NM6ATMA1 Infineon-ISC088N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f5b77422d42
ISC088N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 28A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 23µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 40 V
auf Bestellung 4825 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.83 EUR
10+2.45 EUR
100+1.65 EUR
500+1.31 EUR
1000+1.2 EUR
2000+1.15 EUR
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ISC018N08NM6ATMA1 infineon-isc018n08nm6-datasheet-en.pdf?fileId=8ac78c8c8c3de074018c3f9382112e16
ISC018N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
auf Bestellung 1583 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.4 EUR
10+6.24 EUR
100+4.44 EUR
500+3.92 EUR
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ISC151N08NM6ATMA1 Infineon-ISC151N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f802c4e2ddb
ISC151N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC151N08NM6ATMA1 Infineon-ISC151N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f802c4e2ddb
ISC151N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 18A, 10V
Power Dissipation (Max): 3W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 13µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 40 V
Produkt ist nicht verfügbar
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IRF830PBF irl620.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
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IRF8304MTRPBF irf8304mpbf.pdf?fileId=5546d462533600a40153560d20db1d5d
IRF8304MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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IRF8308MTRPBF irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61
IRF8308MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Produkt ist nicht verfügbar
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IR21271PBF description ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
127+4.33 EUR
Mindestbestellmenge: 127 Stücke
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IR21271PBF description ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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DEMOFX20MIPI001TOBO1 infineon-ez-usb-fx20-demo-board-demo-fx20-mipi-001-usermanual-en.pdf
DEMOFX20MIPI001TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYUSB402X
Packaging: Box
Function: USB
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CYUSB402x
Embedded: Yes, FPGA
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+459.94 EUR
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S6J332DJEESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
S6J332DJEESE20000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
Produkt ist nicht verfügbar
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IDFW80C65D1XKSA1 Infineon-IDFW80C65D1-DataSheet-v02_02-EN.pdf?fileId=5546d46274cf54d50174da579c702296
IDFW80C65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR GP 650V 74A TO247-3-AI
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 73 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 74A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
93+5.93 EUR
Mindestbestellmenge: 93 Stücke
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PSE846GPS2DBZC4XQSA1 infineon-psoc-edge-e8x-consumer-datasheet-datasheet-en.pdf
PSE846GPS2DBZC4XQSA1
Hersteller: Infineon Technologies
Description: IOT-EDGE
Packaging: Tray
Package / Case: 220-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz, 400MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 5M x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: NVSRAM
Core Processor: ARM® Cortex®-M55, ARM® Ethos-U55
Data Converters: A/D 17x20b SAR; D/A 2x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: AES, Brown-out Detect/Reset, DMA, I2S, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 220-FBGA (10x10)
Number of I/O: 147
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.5 EUR
10+18.46 EUR
25+17.21 EUR
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TLE9261BQXXUMA2 Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04
TLE9261BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.26 EUR
10+4.71 EUR
25+4.33 EUR
100+3.9 EUR
250+3.7 EUR
500+3.65 EUR
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IAUTN15S6N038TATMA1 Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125
IAUTN15S6N038TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUTN15S6N038TATMA1 Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125
IAUTN15S6N038TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1690 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.51 EUR
10+9.65 EUR
25+8.92 EUR
100+8.14 EUR
250+7.77 EUR
500+7.54 EUR
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IAUTN15S6N025TATMA1 Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802
IAUTN15S6N025TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUTN15S6N025TATMA1 Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802
IAUTN15S6N025TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.36 EUR
10+12.71 EUR
25+11.79 EUR
100+10.79 EUR
250+10.32 EUR
500+10.03 EUR
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AUIRF1010EZS IRSDS10898-1.pdf?t.download=true&u=5oefqw
AUIRF1010EZS
Hersteller: Infineon Technologies
Description: AUIRF1010 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+15.7 EUR
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IRF1010ZPBF description irf1010zspbf.pdf?fileId=5546d462533600a4015355da7d69188d
IRF1010ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C4147LQEHVS136XXQLA1 Infineon-CY8C41x7_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c956a0a470195817786015ddd
CY8C4147LQEHVS136XXQLA1
Hersteller: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.6V ~ 28V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 32-QFN (6x6)
Grade: Automotive
Number of I/O: 49
Qualification: AEC-Q100
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.68 EUR
10+15.39 EUR
25+14.32 EUR
100+13.14 EUR
260+12.55 EUR
520+12.21 EUR
1040+11.94 EUR
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IMZA75R060M2HXKSA1 IMZA75R060M2HXKSA1.pdf
IMZA75R060M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA75R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.18 EUR
30+8.82 EUR
120+7.41 EUR
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GS0650302LMRXUSA1 Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149
GS0650302LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+10.1 EUR
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GS0650302LMRXUSA1 Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149
GS0650302LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.42 EUR
10+14.82 EUR
100+11.58 EUR
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ISC300N20NM6ATMA1 infineon-isc300n20nm6-datasheet-en.pdf
ISC300N20NM6ATMA1
Hersteller: Infineon Technologies
Description: ISC300N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
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ISC300N20NM6ATMA1 infineon-isc300n20nm6-datasheet-en.pdf
ISC300N20NM6ATMA1
Hersteller: Infineon Technologies
Description: ISC300N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 4326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.25 EUR
10+4.71 EUR
100+3.27 EUR
500+2.65 EUR
1000+2.45 EUR
2000+2.28 EUR
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IRFP4868PBFAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.54 EUR
25+9.23 EUR
100+7.74 EUR
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CY8C4147LQS-S295 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S295
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.43 EUR
10+11.15 EUR
25+10.34 EUR
100+9.44 EUR
260+8.98 EUR
520+8.73 EUR
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AUIRGSL4062D1 AUIRGB4062D1.pdf?t.download=true&u=ovmfp3
AUIRGSL4062D1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+7.68 EUR
Mindestbestellmenge: 72 Stücke
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CYRF9935-24LQXC 5047
CYRF9935-24LQXC
Hersteller: Infineon Technologies
Description: IC RF TXRX ISM>1GHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Current - Receiving: 14mA ~ 15mA
Data Rate (Max): 2Mbps
Current - Transmitting: 6.3mA ~ 15mA
Supplier Device Package: 24-QFN (4x4)
Modulation: GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYRF89535-68LTXC CYRF89535-68LTXC_Web.pdf
CYRF89535-68LTXC
Hersteller: Infineon Technologies
Description: IC RF TXRX 2.4GHZ 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: 68-QFN (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYRF69213-40LTXC CYRF69213_April2013.pdf
CYRF69213-40LTXC
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Power - Output: 4dBm
Current - Receiving: 23.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 36.6mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYRF69313-40LTXC CYRF69313_Mar2014.pdf
CYRF69313-40LTXC
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C22213-24LFI CY8C22113%2C%2022213.pdf
CY8C22213-24LFI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 2KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 16
DigiKey Programmable: Not Verified
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.66 EUR
10+5.77 EUR
25+5.3 EUR
Mindestbestellmenge: 3 Stücke
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S28HS256TGZBHB813 infineon-s28hs256t-s28hl256t-256mb-semper-flash-octal-interface-1-8v-3-datasheet-en.pdf
S28HS256TGZBHB813
Hersteller: Infineon Technologies
Description: S28HS256TGZBHB813
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 32M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRFR3303TRPBF irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d
IRFR3303TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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IMY120R036AM2HXKSA1 infineon-imy120r036am2h-datasheet-en.pdf
IMY120R036AM2HXKSA1
Hersteller: Infineon Technologies
Description: IMY120R036AM2HXKSA1
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18.2A, 18V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.7mA
Supplier Device Package: PG-TO247-4-19
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 800 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.03 EUR
30+14.46 EUR
120+12.36 EUR
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IGLT65R110B2AUMA1 infineon-iglt65r110b2-datasheet-en.pdf
IGLT65R110B2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 14A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R110B2AUMA1 infineon-iglt65r110b2-datasheet-en.pdf
IGLT65R110B2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 14A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.75 EUR
10+9.03 EUR
25+8.35 EUR
100+7.6 EUR
250+7.25 EUR
500+7.03 EUR
Mindestbestellmenge: 2 Stücke
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AUIRFZ48N auirfz48n.pdf?fileId=5546d462533600a4015355ba098d150e
AUIRFZ48N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
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