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IGI60L5050B1MXUMA1 Infineon Technologies infineon-igi60l5050b1m-datasheet-en.pdf Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
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IKZA75N65RH5XKSA1 IKZA75N65RH5XKSA1 Infineon Technologies Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 2683 Stücke:
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53+8.4 EUR
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AUIRFZ24NSTRL AUIRFZ24NSTRL Infineon Technologies auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZS AUIRF1404ZS Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL AUIRF1404ZSTRL Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404STRL AUIRF1404STRL Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404 AUIRF1404 Infineon Technologies auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404S AUIRF1404S Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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AUIRLZ24NSTRL AUIRLZ24NSTRL Infineon Technologies AUIRLZ24NS%2CNL.pdf Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLZ24NS AUIRLZ24NS Infineon Technologies AUIRLZ24NS%2CNL.pdf Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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CY8C4146AZIT403XQMA1 CY8C4146AZIT403XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
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CY8C4146AZIT405XQMA1 CY8C4146AZIT405XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
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CY8C4147AZIT403XQMA1 CY8C4147AZIT403XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
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CY8C4147AZIT405XQMA1 CY8C4147AZIT405XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
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IRGB4060DPBF IRGB4060DPBF Infineon Technologies IRGB4060DPBF.pdf description Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
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CY8CLED04-68LTXI CY8CLED04-68LTXI Infineon Technologies CY8CLED04.pdf Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.72 EUR
10+9.88 EUR
25+9.17 EUR
Mindestbestellmenge: 2
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IKP08N65F5XKSA1 IKP08N65F5XKSA1 Infineon Technologies DS_IKP08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9bac1de5da9 Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
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6+3.12 EUR
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CYT4DNJBMCQ1BZSGST CYT4DNJBMCQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
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AUIRLR024N AUIRLR024N Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024NTRL AUIRLR024NTRL Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024Z AUIRLR024Z Infineon Technologies auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561 Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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IRS2184PBF IRS2184PBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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SAF-XE164GN-24F80L AA SAF-XE164GN-24F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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PSC3M5FDS2ACQ1AQSA1 PSC3M5FDS2ACQ1AQSA1 Infineon Technologies PSC3M5FDx.pdf Description: PSOC CONTROL CHIP
Packaging: Tray
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IMYR140R019M2HXLSA1 IMYR140R019M2HXLSA1 Infineon Technologies Infineon-IMYR140R019M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce35e71616a0 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
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IMYR140R029M2HXLSA1 IMYR140R029M2HXLSA1 Infineon Technologies Infineon-IMYR140R029M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce4622891d4d Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 27.3A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 1000 V
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IMYR140R024M2HXLSA1 IMYR140R024M2HXLSA1 Infineon Technologies Infineon-IMYR140R024M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce36d06f16d4 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
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AUIRL1404ZS AUIRL1404ZS Infineon Technologies auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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BGA535N6E6327XTSA1 BGA535N6E6327XTSA1 Infineon Technologies Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20 Description: RF MMIC SUB 3 GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
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BGA535N6E6327XTSA1 BGA535N6E6327XTSA1 Infineon Technologies Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20 Description: RF MMIC SUB 3 GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRFSL5615PBF IRFSL5615PBF Infineon Technologies irfs5615pbf.pdf?fileId=5546d462533600a40153563a5d3521c4 Description: MOSFET N-CH 150V 33A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
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SPW20N60CFDFKSA1 SPW20N60CFDFKSA1 Infineon Technologies SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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DD89N12KHPSA1 DD89N12KHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1200V 89A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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DD171N12KKHPSA2 DD171N12KKHPSA2 Infineon Technologies Infineon-DD171N-DataSheet-v03_01-EN.pdf Description: DIODE MODULE GEN PURP 1200V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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DD350N12KHPSA1 DD350N12KHPSA1 Infineon Technologies Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50 Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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DD350N12KHPSA1 DD350N12KHPSA1 Infineon Technologies Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50 Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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ND89N12KXPSA1 Infineon Technologies infineon-dd89n-ds-en-de.pdf?folderId=db3a304412b407950112b42f6f3e4b72&fileId=db3a304412b407950112b42fb9c84d3a&location=en.Products.Power_Modules_and_Discs.Thyristor___Diode_Modules.PowerBLOCK_Rect Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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IMZA120R040M2HXKSA1 IMZA120R040M2HXKSA1 Infineon Technologies infineon-imza120r040m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fd4e92d5db4 Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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ICE184EMXUMA1 ICE184EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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ICE184EMXUMA1 ICE184EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 999 Stücke:
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ICE186EMXUMA1 ICE186EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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ICE186EMXUMA1 ICE186EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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3+7.22 EUR
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IRFZ44NSTRRPBF IRFZ44NSTRRPBF Infineon Technologies infineon-irfz44ns-datasheet-en.pdf description Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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AUIRFZ44N AUIRFZ44N Infineon Technologies AUIRFZ44N.pdf Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44NS AUIRFZ44NS Infineon Technologies AUIRFZ44NS%2CNL.pdf Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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IRFP460PBF IRFP460PBF Infineon Technologies 91237.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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DDB2U50N08W1R_B23 DDB2U50N08W1R_B23 Infineon Technologies Infineon-DDB2U50N08W1R_B23-DS-v03_00-EN-219386.pdf Bridge Rectifiers Bridge Rectifier 600V
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BA 592 E6327 BA 592 E6327 Infineon Technologies ba592_ba892series.pdf PIN Diodes PIN 35 V 100 mA
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BA595E6327HTSA1 Infineon Technologies Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf PIN Diodes Silicon PIN Diode 50V 100mA
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BAR9002ELE6327XTMA1 BAR9002ELE6327XTMA1 Infineon Technologies Infineon-BAR90-02EL-DS-v01_00-EN.pdf PIN Diodes RF DIODES
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BAR 81W H6327 BAR 81W H6327 Infineon Technologies bar81series.pdf PIN Diodes RF DIODE
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BA 592 E6433 Infineon Technologies ba592_ba892series-87652.pdf PIN Diodes Silicon RF Switching Diode 35V 100mA
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BAR 63-02V H6327 BAR 63-02V H6327 Infineon Technologies Infineon_BAR63SERIES_DS_DS_v01_01_EN.pdf PIN Diodes RF DIODE
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BA 595 E6327 Infineon Technologies Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf PIN Diodes Silicon PIN Diode 50V 100mA
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BAR 64-04 E6327 BAR 64-04 E6327 Infineon Technologies Infineon_BAR64_04_DS_v01_01_EN.pdf PIN Diodes Silicon PIN Diode 150V 100mA
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BAR 88-02V H6327 BAR 88-02V H6327 Infineon Technologies bar88series-86027.pdf PIN Diodes RF DIODE
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BAR 63-04 E6327 Infineon Technologies Infineon_BAR63SERIES_DS_DS_v01_01_EN.pdf PIN Diodes Silicon PIN Diodes
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BAR8802VH6327XTSA1 BAR8802VH6327XTSA1 Infineon Technologies Infineon-BAR88SERIES-DS-v01_01-en-1730988.pdf PIN Diodes RF DIODE
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IGI60L5050B1MXUMA1 infineon-igi60l5050b1m-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
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IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
IKZA75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+8.4 EUR
Mindestbestellmenge: 53
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AUIRFZ24NSTRL auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd
AUIRFZ24NSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZS auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404ZSTRL auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404STRL auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404 auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372
AUIRF1404
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404S auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLZ24NSTRL AUIRLZ24NS%2CNL.pdf
AUIRLZ24NSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLZ24NS AUIRLZ24NS%2CNL.pdf
AUIRLZ24NS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C4146AZIT403XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AZIT403XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
Produkt ist nicht verfügbar
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CY8C4146AZIT405XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AZIT405XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
Produkt ist nicht verfügbar
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CY8C4147AZIT403XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4147AZIT403XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
Produkt ist nicht verfügbar
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CY8C4147AZIT405XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4147AZIT405XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
Produkt ist nicht verfügbar
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IRGB4060DPBF description IRGB4060DPBF.pdf
IRGB4060DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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CY8CLED04-68LTXI CY8CLED04.pdf
CY8CLED04-68LTXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.72 EUR
10+9.88 EUR
25+9.17 EUR
Mindestbestellmenge: 2
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IKP08N65F5XKSA1 DS_IKP08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9bac1de5da9
IKP08N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
Mindestbestellmenge: 6
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CYT4DNJBMCQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBMCQ1BZSGST
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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AUIRLR024N auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLR024NTRL auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024NTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLR024Z auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561
AUIRLR024Z
Hersteller: Infineon Technologies
Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRS2184PBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE164GN-24F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAF-XE164GN-24F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PSC3M5FDS2ACQ1AQSA1 PSC3M5FDx.pdf
PSC3M5FDS2ACQ1AQSA1
Hersteller: Infineon Technologies
Description: PSOC CONTROL CHIP
Packaging: Tray
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.61 EUR
10+8.19 EUR
25+7.58 EUR
Mindestbestellmenge: 2
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IMYR140R019M2HXLSA1 Infineon-IMYR140R019M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce35e71616a0
IMYR140R019M2HXLSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.55 EUR
30+15.17 EUR
120+13.13 EUR
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IMYR140R029M2HXLSA1 Infineon-IMYR140R029M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce4622891d4d
IMYR140R029M2HXLSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 27.3A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 1000 V
Produkt ist nicht verfügbar
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IMYR140R024M2HXLSA1 Infineon-IMYR140R024M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce36d06f16d4
IMYR140R024M2HXLSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
Produkt ist nicht verfügbar
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AUIRL1404ZS auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e
AUIRL1404ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BGA535N6E6327XTSA1 Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20
BGA535N6E6327XTSA1
Hersteller: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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BGA535N6E6327XTSA1 Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20
BGA535N6E6327XTSA1
Hersteller: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
auf Bestellung 9042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
27+0.67 EUR
28+0.64 EUR
100+0.58 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.5 EUR
5000+0.46 EUR
Mindestbestellmenge: 23
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
102+4.39 EUR
Mindestbestellmenge: 102
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFSL5615PBF irfs5615pbf.pdf?fileId=5546d462533600a40153563a5d3521c4
IRFSL5615PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 904 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
203+2.19 EUR
Mindestbestellmenge: 203
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SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
SPW20N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+4.46 EUR
Mindestbestellmenge: 100
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DD89N12KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
DD89N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1200V 89A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+166.48 EUR
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DD171N12KKHPSA2 Infineon-DD171N-DataSheet-v03_01-EN.pdf
DD171N12KKHPSA2
Hersteller: Infineon Technologies
Description: DIODE MODULE GEN PURP 1200V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+228.32 EUR
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DD350N12KHPSA1 Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50
DD350N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+242.33 EUR
Mindestbestellmenge: 2
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DD350N12KHPSA1 Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50
DD350N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Produkt ist nicht verfügbar
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ND89N12KXPSA1 infineon-dd89n-ds-en-de.pdf?folderId=db3a304412b407950112b42f6f3e4b72&fileId=db3a304412b407950112b42fb9c84d3a&location=en.Products.Power_Modules_and_Discs.Thyristor___Diode_Modules.PowerBLOCK_Rect
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Produkt ist nicht verfügbar
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IMZA120R040M2HXKSA1 infineon-imza120r040m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fd4e92d5db4
IMZA120R040M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.26 EUR
30+9.07 EUR
120+7.71 EUR
Mindestbestellmenge: 2
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ICE184EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE184EMXUMA1
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Produkt ist nicht verfügbar
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ICE184EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE184EMXUMA1
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.76 EUR
10+4.35 EUR
25+4 EUR
100+3.61 EUR
250+3.42 EUR
500+3.31 EUR
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ICE186EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE186EMXUMA1
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
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Anzahl Preis
1000+4.11 EUR
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ICE186EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE186EMXUMA1
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.22 EUR
10+5.49 EUR
25+5.06 EUR
100+4.58 EUR
250+4.36 EUR
500+4.22 EUR
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IRFZ44NSTRRPBF description infineon-irfz44ns-datasheet-en.pdf
IRFZ44NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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AUIRFZ44N AUIRFZ44N.pdf
AUIRFZ44N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44NS AUIRFZ44NS%2CNL.pdf
AUIRFZ44NS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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IRFP460PBF 91237.pdf
IRFP460PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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DDB2U50N08W1R_B23 Infineon-DDB2U50N08W1R_B23-DS-v03_00-EN-219386.pdf
DDB2U50N08W1R_B23
Hersteller: Infineon Technologies
Bridge Rectifiers Bridge Rectifier 600V
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BA 592 E6327 ba592_ba892series.pdf
BA 592 E6327
Hersteller: Infineon Technologies
PIN Diodes PIN 35 V 100 mA
auf Bestellung 13284 Stücke:
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10+0.3 EUR
16+0.18 EUR
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BA595E6327HTSA1 Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
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BAR9002ELE6327XTMA1 Infineon-BAR90-02EL-DS-v01_00-EN.pdf
BAR9002ELE6327XTMA1
Hersteller: Infineon Technologies
PIN Diodes RF DIODES
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BAR 81W H6327 bar81series.pdf
BAR 81W H6327
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
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5+0.67 EUR
10+0.46 EUR
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BA 592 E6433 ba592_ba892series-87652.pdf
Hersteller: Infineon Technologies
PIN Diodes Silicon RF Switching Diode 35V 100mA
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BAR 63-02V H6327 Infineon_BAR63SERIES_DS_DS_v01_01_EN.pdf
BAR 63-02V H6327
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
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10+0.38 EUR
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BA 595 E6327 Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
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BAR 64-04 E6327 Infineon_BAR64_04_DS_v01_01_EN.pdf
BAR 64-04 E6327
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diode 150V 100mA
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BAR 88-02V H6327 bar88series-86027.pdf
BAR 88-02V H6327
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
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BAR 63-04 E6327 Infineon_BAR63SERIES_DS_DS_v01_01_EN.pdf
Hersteller: Infineon Technologies
PIN Diodes Silicon PIN Diodes
auf Bestellung 1353 Stücke:
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7+0.42 EUR
12+0.24 EUR
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500+0.19 EUR
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BAR8802VH6327XTSA1 Infineon-BAR88SERIES-DS-v01_01-en-1730988.pdf
BAR8802VH6327XTSA1
Hersteller: Infineon Technologies
PIN Diodes RF DIODE
auf Bestellung 17280 Stücke:
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4+0.88 EUR
10+0.67 EUR
100+0.42 EUR
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