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6EDL04I06PCX1SA1 6EDL04I06PCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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6EDL04N06PCX1SA1 6EDL04N06PCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT2B97CACQ0AZSGS CYT2B97CACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
auf Bestellung 590 Stücke:
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1+20.63 EUR
10+16.26 EUR
60+14.37 EUR
120+13.85 EUR
300+13.31 EUR
540+13.03 EUR
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CYT2B97CACQ0AZEGS CYT2B97CACQ0AZEGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
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1+21 EUR
10+16.57 EUR
60+14.64 EUR
120+14.12 EUR
300+13.57 EUR
540+13.28 EUR
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CYT2BL7CAAQ0AZSGST CYT2BL7CAAQ0AZSGST Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: IC MCU 32BIT 4.16MB FLSH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 54x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
auf Bestellung 570 Stücke:
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1+26.63 EUR
10+21.17 EUR
25+19.81 EUR
100+18.31 EUR
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CYT3BB7CEBQ1AEEGS CYT3BB7CEBQ1AEEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
auf Bestellung 595 Stücke:
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1+33.63 EUR
10+26.95 EUR
60+24.04 EUR
120+23.25 EUR
300+22.42 EUR
540+21.99 EUR
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CYT4BB7CEBQ1AEEGS CYT4BB7CEBQ1AEEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
auf Bestellung 594 Stücke:
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1+36.19 EUR
10+29.06 EUR
60+25.96 EUR
120+25.12 EUR
300+24.24 EUR
540+23.78 EUR
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IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 Infineon Technologies Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
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IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 Infineon Technologies Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2354 Stücke:
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3+6.34 EUR
10+4.18 EUR
100+2.95 EUR
500+2.69 EUR
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IAUCN04S7N010GATMA1 IAUCN04S7N010GATMA1 Infineon Technologies infineon-iaucn04s7n010g-datasheet-en.pdf Description: IAUCN04S7N010GATMA1
Packaging: Tray
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-THSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 980 Stücke:
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5+3.92 EUR
10+2.53 EUR
100+1.74 EUR
500+1.4 EUR
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IAUCN08S7N019TATMA1 IAUCN08S7N019TATMA1 Infineon Technologies Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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2000+2 EUR
Mindestbestellmenge: 2000
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IAUCN08S7N019TATMA1 IAUCN08S7N019TATMA1 Infineon Technologies Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5779 Stücke:
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10+3.88 EUR
100+2.73 EUR
500+2.45 EUR
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IAUCN08S7N016TATMA1 IAUCN08S7N016TATMA1 Infineon Technologies Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
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2000+2.45 EUR
Mindestbestellmenge: 2000
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IAUCN08S7N016TATMA1 IAUCN08S7N016TATMA1 Infineon Technologies Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4918 Stücke:
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10+4.55 EUR
100+3.23 EUR
500+3 EUR
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IR2106PBF IR2106PBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SGD04N60BUMA1 SGD04N60BUMA1 Infineon Technologies SGx04N60.pdf Description: IGBT NPT 600V 9.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
Produkt ist nicht verfügbar
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KP405XTMA1 KP405XTMA1 Infineon Technologies Infineon-KP405-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3400 Stücke:
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3400+4.84 EUR
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KP405XTMA1 KP405XTMA1 Infineon Technologies Infineon-KP405-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3400 Stücke:
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10+6.64 EUR
25+6.13 EUR
100+5.57 EUR
250+5.31 EUR
500+5.15 EUR
1000+5.02 EUR
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BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 Infineon Technologies BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t Description: MOSFET N-CH 49V 80A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S25FS064SAGMFI010 S25FS064SAGMFI010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
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S25FS064SAGMFI011 S25FS064SAGMFI011 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FS064SDSMFI010 S25FS064SDSMFI010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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IRG4BC30KPBF IRG4BC30KPBF Infineon Technologies fundamentals-of-power-semiconductors description Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies infineon-irfz46z-datasheet-en.pdf Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies infineon-irfz46z-datasheet-en.pdf Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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IRFZ46ZSPBF IRFZ46ZSPBF Infineon Technologies irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226 Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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BFR843EL3E6327XTSA1 BFR843EL3E6327XTSA1 Infineon Technologies Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1 Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
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BAT2402ELSE6327XTSA1 BAT2402ELSE6327XTSA1 Infineon Technologies INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW TSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
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IQE031N08LM6CGATMA1 IQE031N08LM6CGATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
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IQE031N08LM6CGATMA1 IQE031N08LM6CGATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
auf Bestellung 4980 Stücke:
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ISC031N08NM6ATMA1 ISC031N08NM6ATMA1 Infineon Technologies Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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ISC031N08NM6ATMA1 ISC031N08NM6ATMA1 Infineon Technologies Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
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IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
auf Bestellung 5515 Stücke:
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ISC031N08NM6SCATMA1 ISC031N08NM6SCATMA1 Infineon Technologies Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
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IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 267 Stücke:
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CYWB0226ABSX-FDXIT CYWB0226ABSX-FDXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
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IAUC120N06S5N015ATMA1 IAUC120N06S5N015ATMA1 Infineon Technologies Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 Infineon Technologies Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 Infineon Technologies Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
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ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Produkt ist nicht verfügbar
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IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
14+1.27 EUR
100+0.84 EUR
500+0.65 EUR
Mindestbestellmenge: 9
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IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
Mindestbestellmenge: 7
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IMLT40R036M2HXTMA1 IMLT40R036M2HXTMA1 Infineon Technologies infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54 Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.52 EUR
10+7.12 EUR
100+5.18 EUR
500+4.36 EUR
1800+4.34 EUR
Mindestbestellmenge: 2
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IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+5.87 EUR
Mindestbestellmenge: 1800
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IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+8.39 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.37 EUR
10+12.06 EUR
100+10.26 EUR
Mindestbestellmenge: 2
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IMLT40R011M2HXTMA1 IMLT40R011M2HXTMA1 Infineon Technologies infineon-imlt40r011m2h-datasheet-en.pdf Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
Produkt ist nicht verfügbar
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IRG4BC30UPBF IRG4BC30UPBF Infineon Technologies irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289 description Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30SPBF IRG4BC30SPBF Infineon Technologies irg4bc30spbf.pdf?fileId=5546d462533600a40153563fe53a2281 description Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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SHIELDBTS70081EPZTOBO1 SHIELDBTS70081EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+150.48 EUR
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IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
auf Bestellung 21734 Stücke:
Lieferzeit 10-14 Tag (e)
157+2.84 EUR
Mindestbestellmenge: 157
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IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR4427PBF IR4427PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SHIELD_XENSIV_A SHIELD_XENSIV_A Infineon Technologies Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4 Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.86 EUR
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6EDL04I06PCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04I06PCX1SA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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6EDL04N06PCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04N06PCX1SA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYT2B97CACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B97CACQ0AZSGS
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
auf Bestellung 590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.63 EUR
10+16.26 EUR
60+14.37 EUR
120+13.85 EUR
300+13.31 EUR
540+13.03 EUR
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CYT2B97CACQ0AZEGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B97CACQ0AZEGS
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21 EUR
10+16.57 EUR
60+14.64 EUR
120+14.12 EUR
300+13.57 EUR
540+13.28 EUR
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CYT2BL7CAAQ0AZSGST infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
CYT2BL7CAAQ0AZSGST
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4.16MB FLSH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 54x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.63 EUR
10+21.17 EUR
25+19.81 EUR
100+18.31 EUR
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CYT3BB7CEBQ1AEEGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT3BB7CEBQ1AEEGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
auf Bestellung 595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.63 EUR
10+26.95 EUR
60+24.04 EUR
120+23.25 EUR
300+22.42 EUR
540+21.99 EUR
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CYT4BB7CEBQ1AEEGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT4BB7CEBQ1AEEGS
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.19 EUR
10+29.06 EUR
60+25.96 EUR
120+25.12 EUR
300+24.24 EUR
540+23.78 EUR
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IAUCN08S7L013ATMA1 Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458
IAUCN08S7L013ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN08S7L013ATMA1 Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458
IAUCN08S7L013ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2354 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+4.18 EUR
100+2.95 EUR
500+2.69 EUR
Mindestbestellmenge: 3
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IAUCN04S7N010GATMA1 infineon-iaucn04s7n010g-datasheet-en.pdf
IAUCN04S7N010GATMA1
Hersteller: Infineon Technologies
Description: IAUCN04S7N010GATMA1
Packaging: Tray
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-THSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
10+2.53 EUR
100+1.74 EUR
500+1.4 EUR
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IAUCN08S7N019TATMA1 Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc
IAUCN08S7N019TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2 EUR
Mindestbestellmenge: 2000
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IAUCN08S7N019TATMA1 Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc
IAUCN08S7N019TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
10+3.88 EUR
100+2.73 EUR
500+2.45 EUR
Mindestbestellmenge: 3
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IAUCN08S7N016TATMA1 Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80
IAUCN08S7N016TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.45 EUR
Mindestbestellmenge: 2000
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IAUCN08S7N016TATMA1 Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80
IAUCN08S7N016TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4918 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.88 EUR
10+4.55 EUR
100+3.23 EUR
500+3 EUR
Mindestbestellmenge: 3
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IR2106PBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SGD04N60BUMA1 SGx04N60.pdf
SGD04N60BUMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 9.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
Produkt ist nicht verfügbar
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KP405XTMA1 Infineon-KP405-TPD-v01_00-EN.pdf
KP405XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3400+4.84 EUR
Mindestbestellmenge: 3400
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KP405XTMA1 Infineon-KP405-TPD-v01_00-EN.pdf
KP405XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.66 EUR
10+6.64 EUR
25+6.13 EUR
100+5.57 EUR
250+5.31 EUR
500+5.15 EUR
1000+5.02 EUR
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BTS282ZE3180AATMA2 BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t
BTS282ZE3180AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S25FS064SAGMFI010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFI010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
auf Bestellung 3283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+3.21 EUR
25+3.12 EUR
50+3.05 EUR
100+2.98 EUR
280+2.88 EUR
560+2.81 EUR
1120+2.74 EUR
Mindestbestellmenge: 6
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S25FS064SAGMFI011 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFI011
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS064SDSMFI010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SDSMFI010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+3.8 EUR
25+3.69 EUR
50+3.61 EUR
100+3.52 EUR
Mindestbestellmenge: 5
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IRG4BC30KPBF description fundamentals-of-power-semiconductors
IRG4BC30KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRFZ46ZSTRLPBF infineon-irfz46z-datasheet-en.pdf
IRFZ46ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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IRFZ46ZSTRLPBF infineon-irfz46z-datasheet-en.pdf
IRFZ46ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 3616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
242+1.84 EUR
Mindestbestellmenge: 242
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IRFZ46ZSPBF irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226
IRFZ46ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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BFR843EL3E6327XTSA1 Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1
BFR843EL3E6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
auf Bestellung 30014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
22+0.83 EUR
25+0.74 EUR
100+0.65 EUR
250+0.61 EUR
500+0.58 EUR
1000+0.56 EUR
2500+0.54 EUR
5000+0.53 EUR
Mindestbestellmenge: 16
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BAT2402ELSE6327XTSA1 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw
BAT2402ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 18713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
380+1.17 EUR
Mindestbestellmenge: 380
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IQE031N08LM6CGATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
Produkt ist nicht verfügbar
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IQE031N08LM6CGATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.8 EUR
25+2.56 EUR
100+2.29 EUR
250+2.16 EUR
500+2.09 EUR
1000+2.03 EUR
2500+1.96 EUR
Mindestbestellmenge: 5
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ISC031N08NM6ATMA1 Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44
ISC031N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.3 EUR
Mindestbestellmenge: 2500
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ISC031N08NM6ATMA1 Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44
ISC031N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
10+2.78 EUR
100+1.92 EUR
500+1.59 EUR
Mindestbestellmenge: 5
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IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
Produkt ist nicht verfügbar
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IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
auf Bestellung 5515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+3.79 EUR
25+3.47 EUR
100+3.13 EUR
250+2.96 EUR
500+2.87 EUR
1000+2.78 EUR
2500+2.7 EUR
Mindestbestellmenge: 4
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ISC031N08NM6SCATMA1 Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04
ISC031N08NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Produkt ist nicht verfügbar
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.83 EUR
10+21.37 EUR
100+20.65 EUR
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CYWB0226ABSX-FDXIT download
CYWB0226ABSX-FDXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUC120N06S5N015ATMA1 Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f
IAUC120N06S5N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N022ATMA1 Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3
IAUC120N06S5N022ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5L015ATMA1 Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4
IAUC120N06S5L015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Produkt ist nicht verfügbar
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Produkt ist nicht verfügbar
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IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.27 EUR
100+0.84 EUR
500+0.65 EUR
Mindestbestellmenge: 9
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IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
Mindestbestellmenge: 7
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IMLT40R036M2HXTMA1 infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54
IMLT40R036M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.52 EUR
10+7.12 EUR
100+5.18 EUR
500+4.36 EUR
1800+4.34 EUR
Mindestbestellmenge: 2
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IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
Produkt ist nicht verfügbar
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IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+5.87 EUR
Mindestbestellmenge: 1800
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IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+8.39 EUR
Mindestbestellmenge: 1800
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IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.37 EUR
10+12.06 EUR
100+10.26 EUR
Mindestbestellmenge: 2
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IMLT40R011M2HXTMA1 infineon-imlt40r011m2h-datasheet-en.pdf
IMLT40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
Produkt ist nicht verfügbar
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IRG4BC30UPBF description irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289
IRG4BC30UPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4BC30SPBF description irg4bc30spbf.pdf?fileId=5546d462533600a40153563fe53a2281
IRG4BC30SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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SHIELDBTS70081EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
SHIELDBTS70081EPZTOBO1
Hersteller: Infineon Technologies
Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+150.48 EUR
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IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
auf Bestellung 21734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
157+2.84 EUR
Mindestbestellmenge: 157
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IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR4427PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SHIELD_XENSIV_A Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4
SHIELD_XENSIV_A
Hersteller: Infineon Technologies
Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+103.86 EUR
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