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IRF1407PBF IRF1407PBF Infineon Technologies infineon-irf1407-datasheet-en.pdf description Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
auf Bestellung 6618 Stücke:
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100+2.06 EUR
500+1.67 EUR
1000+1.54 EUR
2000+1.43 EUR
5000+1.32 EUR
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CY8C20646AS-24LQXI CY8C20646AS-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC PSOC 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C20646A-24LQXIT CY8C20646A-24LQXIT Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENSE 1.8V 36 I/O 48-QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2103PBF IR2103PBF Infineon Technologies ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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TLE9262BQXXUMA2 TLE9262BQXXUMA2 Infineon Technologies Infineon-TLE9262BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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TLE9261BQXV33XUMA2 TLE9261BQXV33XUMA2 Infineon Technologies Infineon-TLE9261BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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TLE92613BQXV33XUMA2 TLE92613BQXV33XUMA2 Infineon Technologies Infineon-TLE9261-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757f18f3924 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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XMC1302Q024X0064ABXTMA1 XMC1302Q024X0064ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
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XMC1302Q024X0064ABXTMA1 XMC1302Q024X0064ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
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AUIRF3205 AUIRF3205 Infineon Technologies auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
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IPP038N15NM6AKSA1 IPP038N15NM6AKSA1 Infineon Technologies DS_IPP038N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 76A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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IQDH45N04LM6SCATMA1 IQDH45N04LM6SCATMA1 Infineon Technologies Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQDH45N04LM6SCATMA1 IQDH45N04LM6SCATMA1 Infineon Technologies Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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AIMDQ75R007M2HXTMA1 AIMDQ75R007M2HXTMA1 Infineon Technologies infineon-aimdq75r007m2h-datasheet-en.pdf Description: AIMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R007M2HXTMA1 AIMDQ75R007M2HXTMA1 Infineon Technologies infineon-aimdq75r007m2h-datasheet-en.pdf Description: AIMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
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IR2101PBF IR2101PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IMT65R060M2HXUMA1 IMT65R060M2HXUMA1 Infineon Technologies Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMT65R060M2HXUMA1 IMT65R060M2HXUMA1 Infineon Technologies Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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2+9.93 EUR
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IPT65R018CM8XTMA1 IPT65R018CM8XTMA1 Infineon Technologies Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf Description: IPT65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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IPT65R018CM8XTMA1 IPT65R018CM8XTMA1 Infineon Technologies Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf Description: IPT65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
auf Bestellung 1473 Stücke:
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1+19.89 EUR
10+13.85 EUR
100+11.19 EUR
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CY8C6116BZI-F54T Infineon Technologies Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
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AMF12S62LB2ZXKMA1 Infineon Technologies AMF12S62LB2ZXKMA1.pdf Description: AMF12S62LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 125W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S62LB1ZXKMA1 Infineon Technologies AMM12S62LB1ZXKMA1.pdf Description: AMM12S62LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 128W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMF12S18LB2ZXKMA1 Infineon Technologies AMF12S18LB2ZXKMA1.pdf Description: AMF12S18LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 300W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S18LB1ZXKMA1 Infineon Technologies AMM12S18LB1ZXKMA1.pdf Description: AMM12S18LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 312W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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IAUCN08S7N024TATMA1 IAUCN08S7N024TATMA1 Infineon Technologies Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
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IAUCN08S7N024TATMA1 IAUCN08S7N024TATMA1 Infineon Technologies Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
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BTS70402EPADAUGHBRDTOBO1 BTS70402EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7040-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb Description: BTS7040-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-2EPA
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TLE92102QVWXUMA1 TLE92102QVWXUMA1 Infineon Technologies infineon-tle92102qvw-datasheet-en.pdf Description: TLE92102QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE92102QVWXUMA1 TLE92102QVWXUMA1 Infineon Technologies infineon-tle92102qvw-datasheet-en.pdf Description: TLE92102QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE9186QVWXUMA1 TLE9186QVWXUMA1 Infineon Technologies infineon-tle9186qvw-datasheet-en.pdf Description: TLE9186QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE9186QVWXUMA1 TLE9186QVWXUMA1 Infineon Technologies infineon-tle9186qvw-datasheet-en.pdf Description: TLE9186QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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CY25100SXC-062 CY25100SXC-062 Infineon Technologies Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62 Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22391LTXC-06 CY22391LTXC-06 Infineon Technologies CY22389_89_91_4-13-20.pdf Description: IC CLOCK GENERATOR
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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IRSM001-100LHTR Infineon Technologies i.MX%206%20Ultra%20Light.pdf Description: IRSM001 - MULTICHIP MODULE
Packaging: Bulk
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CY23EP05SXI-1 CY23EP05SXI-1 Infineon Technologies download Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP05SXC-1 CY23EP05SXC-1 Infineon Technologies download Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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IRMCF312TR IRMCF312TR Infineon Technologies IRMCF312.pdf Description: IC MOTOR DRIVER 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
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IRMCF312TR IRMCF312TR Infineon Technologies IRMCF312.pdf Description: IC MOTOR DRIVER 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
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IAUZN04S7N049ATMA1 IAUZN04S7N049ATMA1 Infineon Technologies Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7N049ATMA1 IAUZN04S7N049ATMA1 Infineon Technologies Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
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CY7C63913-PXC CY7C63913-PXC Infineon Technologies CY7C63310%2C%20638xx%2C%20639xx.pdf Description: IC USB PERIPHERAL CTRLR 40-DIP
Package / Case: 40-DIP (0.600", 15.24mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 40-PDIP
DigiKey Programmable: Not Verified
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KP497XTMA1 KP497XTMA1 Infineon Technologies infineon-kp497-datasheet-en.pdf Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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KP497XTMA1 KP497XTMA1 Infineon Technologies infineon-kp497-datasheet-en.pdf Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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SP49T0512XTMA1 SP49T0512XTMA1 Infineon Technologies Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f Description: TPMS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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S26KL256SDABHV020 S26KL256SDABHV020 Infineon Technologies infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
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S25FS064SAGBHV020 S25FS064SAGBHV020 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS064SDSBHV020 S25FS064SDSBHV020 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128LDPBHV020 S25FL128LDPBHV020 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128LAGBHV023 S25FL128LAGBHV023 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128LDPBHV023 S25FL128LDPBHV023 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF1MR12KM1HHPSA1 FF1MR12KM1HHPSA1 Infineon Technologies Infineon-FF1MR12KM1H-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a38acc37ad Description: MOSFET
Packaging: Tray
auf Bestellung 30 Stücke:
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1+658.26 EUR
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FF1MR12KM1HPHPSA1 FF1MR12KM1HPHPSA1 Infineon Technologies Infineon-FF1MR12KM1HP-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a4c20537c8 Description: MOSFET
Packaging: Tray
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1+668.62 EUR
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IR21064PBF IR21064PBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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20+22.44 EUR
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CY7C1399BN-15VXA CY7C1399BN-15VXA Infineon Technologies CY7C1399BN%20RevC.pdf Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICE184LMXUMA1 ICE184LMXUMA1 Infineon Technologies infineon-ice184lm-datasheet-en.pdf?fileId=8ac78c8c962508060196807d2e400487 Description: ICE184LMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 9.45V ~ 32V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: EN, Soft Start
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ICE184LMXUMA1 ICE184LMXUMA1 Infineon Technologies infineon-ice184lm-datasheet-en.pdf?fileId=8ac78c8c962508060196807d2e400487 Description: ICE184LMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 9.45V ~ 32V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: EN, Soft Start
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3+6.04 EUR
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25+4.18 EUR
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250+3.58 EUR
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REF45W1ZVS184EMTOBO2 Infineon Technologies Description: EVAL BOARD FOR ICE184EM
Packaging: Box
Voltage - Output: 12V, 15V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.75A, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE184EM
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output, 1 Non-Isolated Output
Power - Output: 45W
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IRF1407PBF description infineon-irf1407-datasheet-en.pdf
IRF1407PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
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4+4.63 EUR
50+2.29 EUR
100+2.06 EUR
500+1.67 EUR
1000+1.54 EUR
2000+1.43 EUR
5000+1.32 EUR
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CY8C20646AS-24LQXI CY8C20336H%2C446H.pdf
CY8C20646AS-24LQXI
Hersteller: Infineon Technologies
Description: IC PSOC 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C20646A-24LQXIT Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20646A-24LQXIT
Hersteller: Infineon Technologies
Description: IC CAPSENSE 1.8V 36 I/O 48-QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2103PBF ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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ISA150233C03LMDSXTMA1 Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
28+0.64 EUR
31+0.57 EUR
100+0.5 EUR
250+0.46 EUR
500+0.44 EUR
1000+0.42 EUR
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TLE9262BQXXUMA2 Infineon-TLE9262BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68
TLE9262BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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Anzahl Preis
4+5.53 EUR
10+4.17 EUR
25+3.82 EUR
100+3.45 EUR
250+3.27 EUR
500+3.24 EUR
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TLE9261BQXV33XUMA2 Infineon-TLE9261BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927
TLE9261BQXV33XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 2187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.26 EUR
10+3.96 EUR
25+3.64 EUR
100+3.28 EUR
250+3.11 EUR
500+3.07 EUR
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TLE92613BQXV33XUMA2 Infineon-TLE9261-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757f18f3924
TLE92613BQXV33XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 1558 Stücke:
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Anzahl Preis
4+5.7 EUR
10+4.3 EUR
25+3.95 EUR
100+3.56 EUR
250+3.38 EUR
500+3.35 EUR
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XMC1302Q024X0064ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q024X0064ABXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
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Anzahl Preis
6000+1.93 EUR
Mindestbestellmenge: 6000
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XMC1302Q024X0064ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q024X0064ABXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
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5+3.8 EUR
10+2.82 EUR
25+2.58 EUR
100+2.31 EUR
250+2.18 EUR
500+2.11 EUR
1000+2.04 EUR
2500+1.98 EUR
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AUIRF3205 auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f
AUIRF3205
Hersteller: Infineon Technologies
Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
auf Bestellung 22940 Stücke:
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Anzahl Preis
133+3.37 EUR
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IPP038N15NM6AKSA1 DS_IPP038N15NM6_en.pdf
IPP038N15NM6AKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 76A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
auf Bestellung 178 Stücke:
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Anzahl Preis
2+9.24 EUR
50+4.84 EUR
100+4.42 EUR
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IQDH45N04LM6SCATMA1 Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc
IQDH45N04LM6SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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IQDH45N04LM6SCATMA1 Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc
IQDH45N04LM6SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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AIMDQ75R007M2HXTMA1 infineon-aimdq75r007m2h-datasheet-en.pdf
AIMDQ75R007M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R007M2HXTMA1 infineon-aimdq75r007m2h-datasheet-en.pdf
AIMDQ75R007M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+52.78 EUR
10+38.85 EUR
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IR2101PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2101PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
auf Bestellung 3456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
10+3.85 EUR
50+3.34 EUR
100+3.18 EUR
250+3.01 EUR
500+2.91 EUR
1000+2.83 EUR
2500+2.74 EUR
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IMT65R060M2HXUMA1 Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b
IMT65R060M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMT65R060M2HXUMA1 Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b
IMT65R060M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.93 EUR
Mindestbestellmenge: 2
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IPT65R018CM8XTMA1 Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf
IPT65R018CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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IPT65R018CM8XTMA1 Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf
IPT65R018CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
auf Bestellung 1473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.89 EUR
10+13.85 EUR
100+11.19 EUR
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CY8C6116BZI-F54T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
Produkt ist nicht verfügbar
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AMF12S62LB2ZXKMA1 AMF12S62LB2ZXKMA1.pdf
Hersteller: Infineon Technologies
Description: AMF12S62LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 125W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S62LB1ZXKMA1 AMM12S62LB1ZXKMA1.pdf
Hersteller: Infineon Technologies
Description: AMM12S62LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 128W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMF12S18LB2ZXKMA1 AMF12S18LB2ZXKMA1.pdf
Hersteller: Infineon Technologies
Description: AMF12S18LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 300W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S18LB1ZXKMA1 AMM12S18LB1ZXKMA1.pdf
Hersteller: Infineon Technologies
Description: AMM12S18LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 312W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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IAUCN08S7N024TATMA1 Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38
IAUCN08S7N024TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.71 EUR
Mindestbestellmenge: 2000
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IAUCN08S7N024TATMA1 Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38
IAUCN08S7N024TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.3 EUR
10+3.46 EUR
100+2.41 EUR
500+2.09 EUR
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BTS70402EPADAUGHBRDTOBO1 Infineon-BTS7040-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb
BTS70402EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTS7040-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-2EPA
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+81.44 EUR
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TLE92102QVWXUMA1 infineon-tle92102qvw-datasheet-en.pdf
TLE92102QVWXUMA1
Hersteller: Infineon Technologies
Description: TLE92102QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE92102QVWXUMA1 infineon-tle92102qvw-datasheet-en.pdf
TLE92102QVWXUMA1
Hersteller: Infineon Technologies
Description: TLE92102QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.87 EUR
25+2.63 EUR
100+2.35 EUR
250+2.22 EUR
500+2.15 EUR
Mindestbestellmenge: 5
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TLE9186QVWXUMA1 infineon-tle9186qvw-datasheet-en.pdf
TLE9186QVWXUMA1
Hersteller: Infineon Technologies
Description: TLE9186QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE9186QVWXUMA1 infineon-tle9186qvw-datasheet-en.pdf
TLE9186QVWXUMA1
Hersteller: Infineon Technologies
Description: TLE9186QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.42 EUR
10+3.31 EUR
25+3.03 EUR
100+2.72 EUR
250+2.58 EUR
500+2.49 EUR
Mindestbestellmenge: 4
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CY25100SXC-062 Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62
CY25100SXC-062
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY22391LTXC-06 CY22389_89_91_4-13-20.pdf
CY22391LTXC-06
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF1324STRL auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c
AUIRF1324STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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IRSM001-100LHTR i.MX%206%20Ultra%20Light.pdf
Hersteller: Infineon Technologies
Description: IRSM001 - MULTICHIP MODULE
Packaging: Bulk
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151+2.98 EUR
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CY23EP05SXI-1 download
CY23EP05SXI-1
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY23EP05SXC-1 download
CY23EP05SXC-1
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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IRMCF312TR IRMCF312.pdf
IRMCF312TR
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
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IRMCF312TR IRMCF312.pdf
IRMCF312TR
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
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2+12.9 EUR
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100+8.49 EUR
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IAUZN04S7N049ATMA1 Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc
IAUZN04S7N049ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
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5000+0.44 EUR
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IAUZN04S7N049ATMA1 Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc
IAUZN04S7N049ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 10251 Stücke:
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10+1.85 EUR
16+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
2000+0.49 EUR
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CY7C63913-PXC CY7C63310%2C%20638xx%2C%20639xx.pdf
CY7C63913-PXC
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 40-DIP
Package / Case: 40-DIP (0.600", 15.24mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 40-PDIP
DigiKey Programmable: Not Verified
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KP497XTMA1 infineon-kp497-datasheet-en.pdf
KP497XTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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KP497XTMA1 infineon-kp497-datasheet-en.pdf
KP497XTMA1
Hersteller: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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SP49T0512XTMA1 Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f
SP49T0512XTMA1
Hersteller: Infineon Technologies
Description: TPMS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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2+14.29 EUR
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S26KL256SDABHV020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL256SDABHV020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FS064SAGBHV020 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGBHV020
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FS064SDSBHV020 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SDSBHV020
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FL128LDPBHV020 INFN-S-A0017271261-1.pdf
S25FL128LDPBHV020
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128LAGBHV023 INFN-S-A0017271261-1.pdf
S25FL128LAGBHV023
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128LDPBHV023 INFN-S-A0017271261-1.pdf
S25FL128LDPBHV023
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FF1MR12KM1HHPSA1 Infineon-FF1MR12KM1H-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a38acc37ad
FF1MR12KM1HHPSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tray
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1+658.26 EUR
10+654.06 EUR
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FF1MR12KM1HPHPSA1 Infineon-FF1MR12KM1HP-DataSheet-v00_30-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a4c20537c8
FF1MR12KM1HPHPSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tray
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1+668.62 EUR
16+665.76 EUR
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IR21064PBF ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR21064PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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20+22.44 EUR
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CY7C1399BN-15VXA CY7C1399BN%20RevC.pdf
CY7C1399BN-15VXA
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOJ
Packaging: Tube
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICE184LMXUMA1 infineon-ice184lm-datasheet-en.pdf?fileId=8ac78c8c962508060196807d2e400487
ICE184LMXUMA1
Hersteller: Infineon Technologies
Description: ICE184LMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 9.45V ~ 32V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: EN, Soft Start
auf Bestellung 1000 Stücke:
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1000+3.37 EUR
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ICE184LMXUMA1 infineon-ice184lm-datasheet-en.pdf?fileId=8ac78c8c962508060196807d2e400487
ICE184LMXUMA1
Hersteller: Infineon Technologies
Description: ICE184LMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 9.45V ~ 32V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: EN, Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+4.55 EUR
25+4.18 EUR
100+3.77 EUR
250+3.58 EUR
500+3.56 EUR
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REF45W1ZVS184EMTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE184EM
Packaging: Box
Voltage - Output: 12V, 15V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.75A, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE184EM
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output, 1 Non-Isolated Output
Power - Output: 45W
auf Bestellung 5 Stücke:
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Anzahl Preis
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