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AUIRFB4610 AUIRFB4610 Infineon Technologies auirfb4610.pdf?fileId=5546d462533600a4015355b1155d1423 Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLR3114Z AUIRLR3114Z Infineon Technologies auirlr3114z.pdf?fileId=5546d462533600a4015355be8fa61579 Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IGK120B041SXTSA1 IGK120B041SXTSA1 Infineon Technologies infineon-igk120b041s-datasheet-en.pdf Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
Produkt ist nicht verfügbar
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IGK120B041SXTSA1 IGK120B041SXTSA1 Infineon Technologies infineon-igk120b041s-datasheet-en.pdf Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
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Lieferzeit 10-14 Tag (e)
16+1.13 EUR
23+0.8 EUR
25+0.72 EUR
100+0.62 EUR
250+0.58 EUR
500+0.56 EUR
1000+0.53 EUR
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IGK048B041SXTSA1 IGK048B041SXTSA1 Infineon Technologies infineon-igk048b041s-datasheet-en.pdf Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
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IGK048B041SXTSA1 IGK048B041SXTSA1 Infineon Technologies infineon-igk048b041s-datasheet-en.pdf Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
auf Bestellung 3929 Stücke:
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8+2.38 EUR
11+1.74 EUR
25+1.57 EUR
100+1.39 EUR
250+1.31 EUR
500+1.26 EUR
1000+1.21 EUR
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IRG4PC30FPBF IRG4PC30FPBF Infineon Technologies irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2 Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIMDQ75R033M2HXTMA1 AIMDQ75R033M2HXTMA1 Infineon Technologies infineon-aimdq75r033m2h-datasheet-en.pdf Description: AIMDQ75R033M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R033M2HXTMA1 AIMDQ75R033M2HXTMA1 Infineon Technologies infineon-aimdq75r033m2h-datasheet-en.pdf Description: AIMDQ75R033M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
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1+18.23 EUR
10+12.64 EUR
100+9.99 EUR
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IRG8P60N120KD-EPBF IRG8P60N120KD-EPBF Infineon Technologies IRG8P60N120KD%28-E%29PbF.pdf Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
Produkt ist nicht verfügbar
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BTH62001ENAXUMA1 Infineon Technologies Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62001ENAXUMA1 Infineon Technologies Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62001ENAXUMA1 Infineon Technologies Description: FOR 48 V BOARD NETS
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62004ESAXUMA1 BTH62004ESAXUMA1 Infineon Technologies infineon-bth6200-4esa-datasheet-en.pdf Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62004ESAXUMA1 BTH62004ESAXUMA1 Infineon Technologies infineon-bth6200-4esa-datasheet-en.pdf Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.3 EUR
10+3.99 EUR
25+3.66 EUR
100+3.3 EUR
250+3.13 EUR
500+3.02 EUR
1000+2.94 EUR
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1ED2147S65FXUMA1 1ED2147S65FXUMA1 Infineon Technologies DS_1ED2127%20final%20datasheet%20Rev2_0.pdf Description: 1ED2147S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
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1ED2147S65FXUMA1 1ED2147S65FXUMA1 Infineon Technologies DS_1ED2127%20final%20datasheet%20Rev2_0.pdf Description: 1ED2147S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
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12+1.58 EUR
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100+1.27 EUR
250+1.2 EUR
500+1.15 EUR
1000+1.14 EUR
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IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 Infineon Technologies Infineon-IPD052N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7d49b2f3d4a Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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2000+1.24 EUR
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IPD052N10NF2SATMA1 IPD052N10NF2SATMA1 Infineon Technologies Infineon-IPD052N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7d49b2f3d4a Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 3542 Stücke:
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5+4.08 EUR
10+2.63 EUR
100+1.8 EUR
500+1.45 EUR
1000+1.35 EUR
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IR2106PBF IR2106PBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF840PBF Infineon Technologies irf840_SiHF840_RevD_5-2-16.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR2905ZTRLPBF IRLR2905ZTRLPBF Infineon Technologies irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Produkt ist nicht verfügbar
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IPP076N15N5XKSA1 IPP076N15N5XKSA1 Infineon Technologies Infineon-IPP076N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a04c9f955516 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
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SLB9672VU20FW1524XTMA1 Infineon Technologies Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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SLB9672VU20FW1524XTMA1 Infineon Technologies Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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TPM9672FW1624RPIEBTOBO1 TPM9672FW1624RPIEBTOBO1 Infineon Technologies Infineon-OPTIGA%20TPM%20SLB%209672%20FW15-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c850f4bee01852eeaeb200bc8 Description: TPM9672FW1624RPIEBTOBO1
Packaging: Box
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TPM9672FW1524PCEBTOBO1 TPM9672FW1524PCEBTOBO1 Infineon Technologies Infineon-OPTIGA%20TPM%20SLB%209672%20FW15-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c850f4bee01852eeaeb200bc8 Description: TPM9672FW1524PCEBTOBO1
Packaging: Box
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EVAL5AR0680AG144W1TOBO1 EVAL5AR0680AG144W1TOBO1 Infineon Technologies EVAL5AR0680AG144W1TOBO1.pdf Description: EVAL5AR0680AG144W1TOBO1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 3.67A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5AR0680AG-1
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output
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IDH10G65C5ZXKSA1 IDH10G65C5ZXKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SIL CARB 650V 10A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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TLE95633QXWXUMA1 TLE95633QXWXUMA1 Infineon Technologies Infineon-TLE9563-3QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb3551866c17 Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
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TLE95633QXWXUMA1 TLE95633QXWXUMA1 Infineon Technologies Infineon-TLE9563-3QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb3551866c17 Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
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S26KS256SDGBHV030 S26KS256SDGBHV030 Infineon Technologies infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S26KS128SDGBHV030 S26KS128SDGBHV030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S26KL256SDABHV030 S26KL256SDABHV030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S26KS512SDGBHV030 S26KS512SDGBHV030 Infineon Technologies infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CY8CTMA884LTI-13T CY8CTMA884LTI-13T Infineon Technologies Marking_Format_RevJB_Jul2017.pdf Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
DigiKey Programmable: Not Verified
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XC2080M104F80LRABKXUMA1 Infineon Technologies Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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BCR321UE6327HTSA1 BCR321UE6327HTSA1 Infineon Technologies dgdl?fileId=5546d4624b0b249c014b7d69949b463b Description: IC LED DRVR LINEAR 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 10kHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 25V
Grade: Automotive
Qualification: AEC-Q101
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AIKWH15N120CS7XKSA1 Infineon Technologies infineon-ikw15n120cs7-datasheet-en.pdf Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL
Packaging: Tube
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AIKZH15N120CS7XKSA1 AIKZH15N120CS7XKSA1 Infineon Technologies infineon-ikw15n120cs7-datasheet-en.pdf Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL
Packaging: Tube
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SPS04N60C3BKMA1 SPS04N60C3BKMA1 Infineon Technologies SPS04N60C3.pdf Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
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SGP04N60XKSA1 SGP04N60XKSA1 Infineon Technologies SGx04N60.pdf Description: IGBT NPT 600V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
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IRS2453DSPBF IRS2453DSPBF Infineon Technologies irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814 description Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21363STRPBF IR21363STRPBF Infineon Technologies Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21363STRPBF IR21363STRPBF Infineon Technologies Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5 Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR2136JTRPBF IR2136JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR2136JTRPBF IR2136JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRS2332SPBF IRS2332SPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
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IRS2461SXUMA1 IRS2461SXUMA1 Infineon Technologies Infineon-IRS2461S-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b9095579b4ec0 Description: AUDIO IC
Packaging: Cut Tape (CT)
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S26KS128SDPBHM023 S26KS128SDPBHM023 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDPBHB023 S26KS512SDPBHB023 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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CYW20719B1KUMLGT Infineon Technologies Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 40
Modulation: 8-DPSK, 4-DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
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TDA18250BHN/C1K TDA18250BHN/C1K Infineon Technologies TDA18250AHN_SDS.pdf Description: TDA18250CabSilicTuner
Packaging: Tray
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FF150R12KE3GB2HOSA1 FF150R12KE3GB2HOSA1 Infineon Technologies FF150R12KE3G.pdf Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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IR21531DPBF IR21531DPBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2 Infineon Technologies IRS2136DSTRPBFXUMA2.pdf Description: IRS2136DSTRPBFXUMA2
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2 Infineon Technologies IRS2136DSTRPBFXUMA2.pdf Description: IRS2136DSTRPBFXUMA2
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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CY7C10612DV33-10ZSXI Infineon Technologies Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tube
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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AUIRFB4610 auirfb4610.pdf?fileId=5546d462533600a4015355b1155d1423
AUIRFB4610
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
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AUIRLR3114Z auirlr3114z.pdf?fileId=5546d462533600a4015355be8fa61579
AUIRLR3114Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
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IGK120B041SXTSA1 infineon-igk120b041s-datasheet-en.pdf
IGK120B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
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IGK120B041SXTSA1 infineon-igk120b041s-datasheet-en.pdf
IGK120B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
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IGK048B041SXTSA1 infineon-igk048b041s-datasheet-en.pdf
IGK048B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
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IGK048B041SXTSA1 infineon-igk048b041s-datasheet-en.pdf
IGK048B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
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8+2.38 EUR
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IRG4PC30FPBF irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2
IRG4PC30FPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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AIMDQ75R033M2HXTMA1 infineon-aimdq75r033m2h-datasheet-en.pdf
AIMDQ75R033M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R033M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R033M2HXTMA1 infineon-aimdq75r033m2h-datasheet-en.pdf
AIMDQ75R033M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R033M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
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1+18.23 EUR
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IRG8P60N120KD-EPBF IRG8P60N120KD%28-E%29PbF.pdf
IRG8P60N120KD-EPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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BTH62001ENAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTH62001ENAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTH62001ENAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTH62004ESAXUMA1 infineon-bth6200-4esa-datasheet-en.pdf
BTH62004ESAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTH62004ESAXUMA1 infineon-bth6200-4esa-datasheet-en.pdf
BTH62004ESAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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4+5.3 EUR
10+3.99 EUR
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1ED2147S65FXUMA1 DS_1ED2127%20final%20datasheet%20Rev2_0.pdf
1ED2147S65FXUMA1
Hersteller: Infineon Technologies
Description: 1ED2147S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Produkt ist nicht verfügbar
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1ED2147S65FXUMA1 DS_1ED2127%20final%20datasheet%20Rev2_0.pdf
1ED2147S65FXUMA1
Hersteller: Infineon Technologies
Description: 1ED2147S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
auf Bestellung 2431 Stücke:
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AnzahlPreis
9+2.16 EUR
12+1.58 EUR
25+1.44 EUR
100+1.27 EUR
250+1.2 EUR
500+1.15 EUR
1000+1.14 EUR
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IPD052N10NF2SATMA1 Infineon-IPD052N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7d49b2f3d4a
IPD052N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+1.24 EUR
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IPD052N10NF2SATMA1 Infineon-IPD052N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7d49b2f3d4a
IPD052N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 3542 Stücke:
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AnzahlPreis
5+4.08 EUR
10+2.63 EUR
100+1.8 EUR
500+1.45 EUR
1000+1.35 EUR
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IR2106PBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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IRLR2905ZTRLPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Produkt ist nicht verfügbar
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IPP076N15N5XKSA1 Infineon-IPP076N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a04c9f955516
IPP076N15N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
auf Bestellung 691 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.84 EUR
50+2.96 EUR
100+2.68 EUR
500+2.19 EUR
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SLB9672VU20FW1524XTMA1
Hersteller: Infineon Technologies
Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Produkt ist nicht verfügbar
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SLB9672VU20FW1524XTMA1
Hersteller: Infineon Technologies
Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Produkt ist nicht verfügbar
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TPM9672FW1624RPIEBTOBO1 Infineon-OPTIGA%20TPM%20SLB%209672%20FW15-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c850f4bee01852eeaeb200bc8
TPM9672FW1624RPIEBTOBO1
Hersteller: Infineon Technologies
Description: TPM9672FW1624RPIEBTOBO1
Packaging: Box
auf Bestellung 2 Stücke:
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AnzahlPreis
1+108.84 EUR
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TPM9672FW1524PCEBTOBO1 Infineon-OPTIGA%20TPM%20SLB%209672%20FW15-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c850f4bee01852eeaeb200bc8
TPM9672FW1524PCEBTOBO1
Hersteller: Infineon Technologies
Description: TPM9672FW1524PCEBTOBO1
Packaging: Box
Produkt ist nicht verfügbar
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EVAL5AR0680AG144W1TOBO1 EVAL5AR0680AG144W1TOBO1.pdf
EVAL5AR0680AG144W1TOBO1
Hersteller: Infineon Technologies
Description: EVAL5AR0680AG144W1TOBO1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 3.67A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5AR0680AG-1
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output
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1+168.87 EUR
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IDH10G65C5ZXKSA1 fundamentals-of-power-semiconductors
IDH10G65C5ZXKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Produkt ist nicht verfügbar
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TLE95633QXWXUMA1 Infineon-TLE9563-3QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb3551866c17
TLE95633QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+4.15 EUR
Mindestbestellmenge: 2500 Stücke
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TLE95633QXWXUMA1 Infineon-TLE9563-3QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb3551866c17
TLE95633QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.57 EUR
10+5.74 EUR
25+5.28 EUR
100+4.78 EUR
250+4.54 EUR
500+4.39 EUR
1000+4.27 EUR
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S26KS256SDGBHV030 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS256SDGBHV030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 227 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+21.35 EUR
10+16.85 EUR
25+15.72 EUR
100+15.02 EUR
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S26KS128SDGBHV030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS128SDGBHV030
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KL256SDABHV030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL256SDABHV030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS512SDGBHV030 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS512SDGBHV030
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8CTMA884LTI-13T Marking_Format_RevJB_Jul2017.pdf
CY8CTMA884LTI-13T
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2080M104F80LRABKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BCR321UE6327HTSA1 dgdl?fileId=5546d4624b0b249c014b7d69949b463b
BCR321UE6327HTSA1
Hersteller: Infineon Technologies
Description: IC LED DRVR LINEAR 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 10kHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 25V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1471+0.3 EUR
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AIKWH15N120CS7XKSA1 infineon-ikw15n120cs7-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+8.85 EUR
10+6.74 EUR
25+6.22 EUR
240+5.37 EUR
480+5.21 EUR
720+5.12 EUR
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AIKZH15N120CS7XKSA1 infineon-ikw15n120cs7-datasheet-en.pdf
AIKZH15N120CS7XKSA1
Hersteller: Infineon Technologies
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOL
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.12 EUR
10+6.95 EUR
30+6.32 EUR
120+5.75 EUR
270+5.51 EUR
510+5.36 EUR
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SPS04N60C3BKMA1 SPS04N60C3.pdf
SPS04N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 14621 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
315+1.43 EUR
Mindestbestellmenge: 315 Stücke
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SGP04N60XKSA1 SGx04N60.pdf
SGP04N60XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
auf Bestellung 7998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
185+2.46 EUR
Mindestbestellmenge: 185 Stücke
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IRS2453DSPBF description irs2453d.pdf?fileId=5546d462533600a40153567ac42f2814
IRS2453DSPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21363STRPBF Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5
IR21363STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21363STRPBF Infineon-IR213-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355c8a02116a5
IR21363STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.34 EUR
10+4.77 EUR
25+4.37 EUR
100+3.94 EUR
250+3.74 EUR
500+3.61 EUR
Mindestbestellmenge: 3 Stücke
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IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.26 EUR
10+7.85 EUR
25+7.25 EUR
100+6.59 EUR
250+6.27 EUR
Mindestbestellmenge: 2 Stücke
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IR2136JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
500+6.08 EUR
Mindestbestellmenge: 500 Stücke
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IR2136JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.29 EUR
Mindestbestellmenge: 2 Stücke
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IRS2332SPBF fundamentals-of-power-semiconductors
IRS2332SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2461SXUMA1 Infineon-IRS2461S-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b9095579b4ec0
IRS2461SXUMA1
Hersteller: Infineon Technologies
Description: AUDIO IC
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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S26KS128SDPBHM023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS128SDPBHM023
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S26KS512SDPBHB023 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KS512SDPBHB023
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CYW20719B1KUMLGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 40
Modulation: 8-DPSK, 4-DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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TDA18250BHN/C1K TDA18250AHN_SDS.pdf
TDA18250BHN/C1K
Hersteller: Infineon Technologies
Description: TDA18250CabSilicTuner
Packaging: Tray
auf Bestellung 13309 Stücke:
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AnzahlPreis
245+1.84 EUR
Mindestbestellmenge: 245 Stücke
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FF150R12KE3GB2HOSA1 FF150R12KE3G.pdf
FF150R12KE3GB2HOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 225A 780W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
auf Bestellung 190 Stücke:
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AnzahlPreis
3+166.95 EUR
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IR21531DPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531DPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
auf Bestellung 12788 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.05 EUR
10+4.55 EUR
50+3.95 EUR
100+3.76 EUR
250+3.56 EUR
500+3.45 EUR
1000+3.35 EUR
2500+3.24 EUR
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2.pdf
IRS2136DSTRPBFXUMA2
Hersteller: Infineon Technologies
Description: IRS2136DSTRPBFXUMA2
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1000+1.72 EUR
Mindestbestellmenge: 1000 Stücke
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IRS2136DSTRPBFXUMA2 IRS2136DSTRPBFXUMA2.pdf
IRS2136DSTRPBFXUMA2
Hersteller: Infineon Technologies
Description: IRS2136DSTRPBFXUMA2
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: Independent
Driven Configuration: Full-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.24 EUR
10+2.4 EUR
25+2.19 EUR
100+1.95 EUR
250+1.84 EUR
500+1.78 EUR
Mindestbestellmenge: 6 Stücke
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CY7C10612DV33-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tube
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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