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AUIRF1405 AUIRF1405 Infineon Technologies AUIRF1405.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ44N AUIRFZ44N Infineon Technologies AUIRFZ44N.pdf Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S27KL0642DPBHI023 S27KL0642DPBHI023 Infineon Technologies Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3399 Stücke:
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10+6.25 EUR
25+6.07 EUR
50+5.93 EUR
100+5.79 EUR
250+5.6 EUR
500+5.46 EUR
1000+5.33 EUR
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IQE018N06NM6SCATMA1 IQE018N06NM6SCATMA1 Infineon Technologies infineon-iqe018n06nm6sc-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 6000 Stücke:
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4+5.72 EUR
10+3.73 EUR
100+2.6 EUR
500+2.12 EUR
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ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
auf Bestellung 1940 Stücke:
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1+36.84 EUR
10+34.13 EUR
25+33.05 EUR
50+32.24 EUR
100+31.44 EUR
250+30.4 EUR
500+29.62 EUR
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IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
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5000+1.2 EUR
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IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 6632 Stücke:
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5+4.29 EUR
10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.44 EUR
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GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
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GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 462 Stücke:
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3+8.62 EUR
10+5.75 EUR
100+4.11 EUR
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IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1521 Stücke:
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2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
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IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1188 Stücke:
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500+6.29 EUR
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GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
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250+6.41 EUR
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GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 283 Stücke:
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100+7.08 EUR
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FP25R12W2T4BOMA1 Infineon Technologies Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c Description: FP25R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 15 Stücke:
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8+58.64 EUR
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S25FL512SAGMFAG13 S25FL512SAGMFAG13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPTC017N10NM5LF2ATMA1 IPTC017N10NM5LF2ATMA1 Infineon Technologies Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Produkt ist nicht verfügbar
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IPTC017N10NM5LF2ATMA1 IPTC017N10NM5LF2ATMA1 Infineon Technologies Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 1620 Stücke:
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IMSQ120R026M2HHXUMA1 IMSQ120R026M2HHXUMA1 Infineon Technologies DS_IMSQ120R026M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
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IMSQ120R026M2HHXUMA1 IMSQ120R026M2HHXUMA1 Infineon Technologies DS_IMSQ120R026M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
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IPC020N10L3X1SA1 IPC020N10L3X1SA1 Infineon Technologies DS_IPC020N10L3_2_5.pdf?fileId=5546d4614755559a01477c39579c626c Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
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BGS12PN10E6327XTSA1 BGS12PN10E6327XTSA1 Infineon Technologies Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1 Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
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AUIRF1404STRL AUIRF1404STRL Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404 AUIRF1404 Infineon Technologies auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404S AUIRF1404S Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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REFDOORCONTROLTOBO1 REFDOORCONTROLTOBO1 Infineon Technologies infineon-door-control-module-reference-design-preview-usermanual-en.pdf Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
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AUIRFC8407TR Infineon Technologies Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
auf Bestellung 116606 Stücke:
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EVAL2KWSICIHTOBO1 Infineon Technologies Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
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IAUMN10S5N017GAUMA1 IAUMN10S5N017GAUMA1 Infineon Technologies Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
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100+3.79 EUR
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AUIRFZ34N AUIRFZ34N Infineon Technologies AUIRFZ34N.pdf Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
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IR21531PBF IR21531PBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
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CY9BF217TBGL-GK7E1 CY9BF217TBGL-GK7E1 Infineon Technologies Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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REFAUDIOGANB750WTOBO1 REFAUDIOGANB750WTOBO1 Infineon Technologies REFAUDIOGANB750WTOBO1 Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
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IM241S6S1BALMA1 IM241S6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 237 Stücke:
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IM241S6S1JALMA1 IM241S6S1JALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
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IM241M6S1BALMA1 IM241M6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
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IM241L6S1BALMA1 IM241L6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
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TLE9944EQA40XUMA1 TLE9944EQA40XUMA1 Infineon Technologies Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e Description: EMBEDDED_POWER
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
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PSC3M3EDACQ1XQLA1 PSC3M3EDACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
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2+9.33 EUR
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PSC3P2EDACQ1XQLA1 PSC3P2EDACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
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PSC3P2FDS2ACQ1XQLA1 PSC3P2FDS2ACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
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2+9.72 EUR
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PSC3M5EDACQ1XQLA1 PSC3M5EDACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
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PSC3P5FDS2ACQ1XQLA1 PSC3P5FDS2ACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
auf Bestellung 1599 Stücke:
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XMC1301T038X0064ABXUMA2 XMC1301T038X0064ABXUMA2 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VLL-70SNC CY62256VLL-70SNC Infineon Technologies CY62256V_RevF.pdf Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VLL-70ZC CY62256VLL-70ZC Infineon Technologies CY62256V_RevF.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VLL-70ZXIT CY62256VLL-70ZXIT Infineon Technologies CY62256V_RevF.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VNLL-70SNXC CY62256VNLL-70SNXC Infineon Technologies CY62256VN.pdf Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VNLL-70ZXI CY62256VNLL-70ZXI Infineon Technologies Infineon-CY62256VN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebee50c32d6 Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62128EV30LL-45ZAXA CY62128EV30LL-45ZAXA Infineon Technologies download Description: IC SRAM 1MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR35203MTRPBF IR35203MTRPBF Infineon Technologies Infineon-IR35203MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462576f347501579c95d8e872b7 Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
Produkt ist nicht verfügbar
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IR35203MTRPBF IR35203MTRPBF Infineon Technologies Infineon-IR35203MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462576f347501579c95d8e872b7 Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
auf Bestellung 3000 Stücke:
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CY2544FI CY2544FI Infineon Technologies CY2544%2C46.pdf Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 485 Stücke:
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2+11.6 EUR
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100+7.59 EUR
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PEB22716TV1.5 Infineon Technologies Description: GEMINAX MULTIPORT INTEGRATED AD
Packaging: Bulk
auf Bestellung 3554 Stücke:
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18+24.55 EUR
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AUIRF1405 AUIRF1405.pdf
AUIRF1405
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44N AUIRFZ44N.pdf
AUIRFZ44N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S27KL0642DPBHI023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
S27KL0642DPBHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3399 Stücke:
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Anzahl Preis
3+6.71 EUR
10+6.25 EUR
25+6.07 EUR
50+5.93 EUR
100+5.79 EUR
250+5.6 EUR
500+5.46 EUR
1000+5.33 EUR
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IQE018N06NM6SCATMA1 infineon-iqe018n06nm6sc-datasheet-en.pdf
IQE018N06NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
4+5.72 EUR
10+3.73 EUR
100+2.6 EUR
500+2.12 EUR
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ISC019N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.84 EUR
10+34.13 EUR
25+33.05 EUR
50+32.24 EUR
100+31.44 EUR
250+30.4 EUR
500+29.62 EUR
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IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 5000 Stücke:
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Anzahl Preis
5000+1.2 EUR
Mindestbestellmenge: 5000
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IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 6632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 5
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GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+3.68 EUR
Mindestbestellmenge: 250
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GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.62 EUR
10+5.75 EUR
100+4.11 EUR
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IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
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IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1188 Stücke:
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Anzahl Preis
2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
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GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
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Anzahl Preis
250+6.41 EUR
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GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 283 Stücke:
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Anzahl Preis
2+14.03 EUR
10+9.58 EUR
100+7.08 EUR
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FP25R12W2T4BOMA1 Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c
Hersteller: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 15 Stücke:
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8+58.64 EUR
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S25FL512SAGMFAG13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFAG13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPTC017N10NM5LF2ATMA1 Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8
IPTC017N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Produkt ist nicht verfügbar
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IPTC017N10NM5LF2ATMA1 Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8
IPTC017N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 1620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.58 EUR
10+7.12 EUR
100+5.16 EUR
500+4.87 EUR
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IMSQ120R026M2HHXUMA1 DS_IMSQ120R026M2HH_v1.00_en.pdf
IMSQ120R026M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
Produkt ist nicht verfügbar
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IMSQ120R026M2HHXUMA1 DS_IMSQ120R026M2HH_v1.00_en.pdf
IMSQ120R026M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.73 EUR
10+25.75 EUR
100+23.79 EUR
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IPC020N10L3X1SA1 DS_IPC020N10L3_2_5.pdf?fileId=5546d4614755559a01477c39579c626c
IPC020N10L3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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BGS12PN10E6327XTSA1 Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1
BGS12PN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 50 Stücke:
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Anzahl Preis
50+8.97 EUR
Mindestbestellmenge: 50
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AUIRF1404STRL auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404 auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372
AUIRF1404
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404S auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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REFDOORCONTROLTOBO1 infineon-door-control-module-reference-design-preview-usermanual-en.pdf
REFDOORCONTROLTOBO1
Hersteller: Infineon Technologies
Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
auf Bestellung 2 Stücke:
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Anzahl Preis
1+493.63 EUR
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AUIRFC8407TR
Hersteller: Infineon Technologies
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
auf Bestellung 116606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
363+1.24 EUR
Mindestbestellmenge: 363
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EVAL2KWSICIHTOBO1
Hersteller: Infineon Technologies
Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
auf Bestellung 2 Stücke:
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Anzahl Preis
1+502.71 EUR
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IAUMN10S5N017GAUMA1 Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a
IAUMN10S5N017GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+4.57 EUR
25+4.2 EUR
100+3.79 EUR
250+3.6 EUR
500+3.49 EUR
1000+3.39 EUR
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AUIRFZ34N AUIRFZ34N.pdf
AUIRFZ34N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IR21531PBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
auf Bestellung 23526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
140+3.2 EUR
Mindestbestellmenge: 140
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CY9BF217TBGL-GK7E1 Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF217TBGL-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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REFAUDIOGANB750WTOBO1 REFAUDIOGANB750WTOBO1
REFAUDIOGANB750WTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
auf Bestellung 2 Stücke:
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Anzahl Preis
1+527.17 EUR
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IM241S6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241S6S1BALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 237 Stücke:
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Anzahl Preis
2+9.24 EUR
15+6.83 EUR
30+6.45 EUR
105+5.93 EUR
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IM241S6S1JALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241S6S1JALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.24 EUR
15+6.83 EUR
30+6.45 EUR
105+5.93 EUR
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IM241M6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241M6S1BALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.03 EUR
15+7.44 EUR
30+7.04 EUR
105+6.48 EUR
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IM241L6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241L6S1BALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.02 EUR
15+8.21 EUR
30+7.77 EUR
105+7.17 EUR
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TLE9944EQA40XUMA1 Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e
TLE9944EQA40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.44 EUR
10+4.89 EUR
25+4.5 EUR
100+4.07 EUR
250+3.86 EUR
500+3.74 EUR
1000+3.64 EUR
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PSC3M3EDACQ1XQLA1 Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e
PSC3M3EDACQ1XQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.33 EUR
10+7.17 EUR
25+6.62 EUR
100+6.03 EUR
250+5.75 EUR
500+5.57 EUR
1600+5.35 EUR
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PSC3P2EDACQ1XQLA1 Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e
PSC3P2EDACQ1XQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.5 EUR
10+7.28 EUR
25+6.73 EUR
100+6.12 EUR
250+5.83 EUR
500+5.66 EUR
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PSC3P2FDS2ACQ1XQLA1 Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e
PSC3P2FDS2ACQ1XQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
10+7.46 EUR
25+6.9 EUR
100+6.28 EUR
250+5.98 EUR
500+5.8 EUR
1600+5.57 EUR
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PSC3M5EDACQ1XQLA1 Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b
PSC3M5EDACQ1XQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.82 EUR
10+8.35 EUR
25+7.73 EUR
100+7.04 EUR
250+6.72 EUR
500+6.52 EUR
1600+6.27 EUR
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PSC3P5FDS2ACQ1XQLA1 Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b
PSC3P5FDS2ACQ1XQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
auf Bestellung 1599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.91 EUR
10+8.4 EUR
25+7.78 EUR
100+7.09 EUR
250+6.76 EUR
500+6.57 EUR
Mindestbestellmenge: 2
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XMC1301T038X0064ABXUMA2 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1301T038X0064ABXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VLL-70SNC CY62256V_RevF.pdf
CY62256VLL-70SNC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VLL-70ZC CY62256V_RevF.pdf
CY62256VLL-70ZC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VLL-70ZXIT CY62256V_RevF.pdf
CY62256VLL-70ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VNLL-70SNXC CY62256VN.pdf
CY62256VNLL-70SNXC
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62256VNLL-70ZXI Infineon-CY62256VN_256-Kbit_(32_K_8)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebee50c32d6
CY62256VNLL-70ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62128EV30LL-45ZAXA download
CY62128EV30LL-45ZAXA
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32STSOP
Packaging: Tray
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR35203MTRPBF Infineon-IR35203MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462576f347501579c95d8e872b7
IR35203MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
Produkt ist nicht verfügbar
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IR35203MTRPBF Infineon-IR35203MTRPBF-DS-v01_00-EN.pdf?fileId=5546d462576f347501579c95d8e872b7
IR35203MTRPBF
Hersteller: Infineon Technologies
Description: IC CTRLR PWM MULTIPHASE 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Applications: Multiphase Controller
Supplier Device Package: 48-QFN (6x6)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
76+5.88 EUR
Mindestbestellmenge: 76
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CY2544FI CY2544%2C46.pdf
CY2544FI
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 24QFN
Packaging: Tray
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 166MHz
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Input: LVCMOS, Crystal
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.25V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 24-QFN (4x4)
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.6 EUR
10+8.97 EUR
25+8.31 EUR
100+7.59 EUR
Mindestbestellmenge: 2
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PEB22716TV1.5
Hersteller: Infineon Technologies
Description: GEMINAX MULTIPORT INTEGRATED AD
Packaging: Bulk
auf Bestellung 3554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+24.55 EUR
Mindestbestellmenge: 18
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