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CY37128VP160-83AXC CY37128VP160-83AXC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 128MC 15NS 160TQFP
Packaging: Tray
Package / Case: 160-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 128
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 15 ns
Supplier Device Package: 160-TQFP (24x24)
Voltage Supply - Internal: 3V ~ 3.6V
Number of I/O: 133
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFZ24NSTRL AUIRFZ24NSTRL Infineon Technologies auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C68013A-100AXI CY7C68013A-100AXI Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C68013A-128AXI CY7C68013A-128AXI Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMT65R026M2HXUMA1 IMT65R026M2HXUMA1 Infineon Technologies Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R026M2HXUMA1 IMT65R026M2HXUMA1 Infineon Technologies Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
auf Bestellung 1345 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.04 EUR
10+12.5 EUR
100+9.86 EUR
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IMT65R50M2HXUMA1 IMT65R50M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+6.52 EUR
Mindestbestellmenge: 2000 Stücke
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IMT65R50M2HXUMA1 IMT65R50M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 2000 Stücke:
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IMT65R040M2HXUMA1 IMT65R040M2HXUMA1 Infineon Technologies Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IMT65R040M2HXUMA1 IMT65R040M2HXUMA1 Infineon Technologies Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R050M2HXUMA1 IMT65R050M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IMT65R050M2HXUMA1 IMT65R050M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R075M2HXUMA1 IMT65R075M2HXUMA1 Infineon Technologies infineon-imt65r075m2h-datasheet-en.pdf Description: SICFET N-CH 650V 33.7A HSOF-8
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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SPP02N60C3XKSA1 SPP02N60C3XKSA1 Infineon Technologies Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 73020 Stücke:
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429+1.06 EUR
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SPB02N60C3ATMA1 SPB02N60C3ATMA1 Infineon Technologies SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d Description: MOSFET N-CH 650V 1.8A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2500 Stücke:
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322+1.41 EUR
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ITS6080SEPDXUMA1 ITS6080SEPDXUMA1 Infineon Technologies infineon-its6080s-ep-d-datasheet-en.pdf Description: PROFET
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.57 EUR
Mindestbestellmenge: 3000 Stücke
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ITS6080SEPDXUMA1 ITS6080SEPDXUMA1 Infineon Technologies infineon-its6080s-ep-d-datasheet-en.pdf Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.72 EUR
10+3.54 EUR
25+3.24 EUR
100+2.92 EUR
250+2.76 EUR
500+2.67 EUR
1000+2.59 EUR
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF1405 AUIRF1405 Infineon Technologies AUIRF1405.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ44N AUIRFZ44N Infineon Technologies AUIRFZ44N.pdf Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S27KL0642DPBHI023 S27KL0642DPBHI023 Infineon Technologies Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3399 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.71 EUR
10+6.25 EUR
25+6.07 EUR
50+5.93 EUR
100+5.79 EUR
250+5.6 EUR
500+5.46 EUR
1000+5.33 EUR
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IQE018N06NM6SCATMA1 IQE018N06NM6SCATMA1 Infineon Technologies infineon-iqe018n06nm6sc-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
10+3.73 EUR
100+2.6 EUR
500+2.12 EUR
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ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
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S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
auf Bestellung 1940 Stücke:
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25+33.05 EUR
50+32.24 EUR
100+31.44 EUR
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IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
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IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
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GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
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GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 462 Stücke:
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IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
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IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1521 Stücke:
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2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
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IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1113 Stücke:
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2+15 EUR
10+10.19 EUR
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500+6.33 EUR
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GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
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GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 283 Stücke:
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100+7.08 EUR
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FP25R12W2T4BOMA1 Infineon Technologies Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c Description: FP25R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 15 Stücke:
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S25FL512SAGMFAG13 S25FL512SAGMFAG13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IPTC017N10NM5LF2ATMA1 IPTC017N10NM5LF2ATMA1 Infineon Technologies Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Produkt ist nicht verfügbar
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IPTC017N10NM5LF2ATMA1 IPTC017N10NM5LF2ATMA1 Infineon Technologies Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 1620 Stücke:
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IMSQ120R026M2HHXUMA1 IMSQ120R026M2HHXUMA1 Infineon Technologies DS_IMSQ120R026M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
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IMSQ120R026M2HHXUMA1 IMSQ120R026M2HHXUMA1 Infineon Technologies DS_IMSQ120R026M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
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IPC020N10L3X1SA1 IPC020N10L3X1SA1 Infineon Technologies DS_IPC020N10L3_2_5.pdf?fileId=5546d4614755559a01477c39579c626c Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
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BGS12PN10E6327XTSA1 BGS12PN10E6327XTSA1 Infineon Technologies Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1 Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
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AUIRF1404STRL AUIRF1404STRL Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404 AUIRF1404 Infineon Technologies auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404S AUIRF1404S Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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REFDOORCONTROLTOBO1 REFDOORCONTROLTOBO1 Infineon Technologies infineon-door-control-module-reference-design-preview-usermanual-en.pdf Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
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AUIRFC8407TR Infineon Technologies Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
auf Bestellung 116606 Stücke:
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EVAL2KWSICIHTOBO1 Infineon Technologies Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
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IAUMN10S5N017GAUMA1 IAUMN10S5N017GAUMA1 Infineon Technologies Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
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10+4.57 EUR
25+4.2 EUR
100+3.79 EUR
250+3.6 EUR
500+3.49 EUR
1000+3.39 EUR
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AUIRFZ34N AUIRFZ34N Infineon Technologies AUIRFZ34N.pdf Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
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IR21531PBF IR21531PBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
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CY9BF217TBGL-GK7E1 CY9BF217TBGL-GK7E1 Infineon Technologies Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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REFAUDIOGANB750WTOBO1 REFAUDIOGANB750WTOBO1 Infineon Technologies REFAUDIOGANB750WTOBO1 Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
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IM241S6S1BALMA1 IM241S6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 237 Stücke:
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2+9.24 EUR
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30+6.45 EUR
105+5.93 EUR
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IM241S6S1JALMA1 IM241S6S1JALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 224 Stücke:
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IM241M6S1BALMA1 IM241M6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 232 Stücke:
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2+10.03 EUR
15+7.44 EUR
30+7.04 EUR
105+6.48 EUR
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CY37128VP160-83AXC Ultra%20370000%20CPLD%20Family.pdf
CY37128VP160-83AXC
Hersteller: Infineon Technologies
Description: IC CPLD 128MC 15NS 160TQFP
Packaging: Tray
Package / Case: 160-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 128
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 15 ns
Supplier Device Package: 160-TQFP (24x24)
Voltage Supply - Internal: 3V ~ 3.6V
Number of I/O: 133
DigiKey Programmable: Not Verified
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AUIRFZ24NSTRL auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd
AUIRFZ24NSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C68013A-100AXI download
CY7C68013A-100AXI
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C68013A-128AXI download
CY7C68013A-128AXI
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMT65R026M2HXUMA1 Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c
IMT65R026M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R026M2HXUMA1 Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c
IMT65R026M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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1+18.04 EUR
10+12.5 EUR
100+9.86 EUR
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IMT65R50M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R50M2HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 2000 Stücke:
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AnzahlPreis
2000+6.52 EUR
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IMT65R50M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R50M2HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
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IMT65R040M2HXUMA1 Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08
IMT65R040M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R040M2HXUMA1 Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08
IMT65R040M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R050M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R050M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IMT65R050M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R050M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R075M2HXUMA1 infineon-imt65r075m2h-datasheet-en.pdf
IMT65R075M2HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 33.7A HSOF-8
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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SPP02N60C3XKSA1 Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f
SPP02N60C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 73020 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
429+1.06 EUR
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SPB02N60C3ATMA1 SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d
SPB02N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
322+1.41 EUR
Mindestbestellmenge: 322 Stücke
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ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
ITS6080SEPDXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+2.57 EUR
Mindestbestellmenge: 3000 Stücke
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ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
ITS6080SEPDXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.72 EUR
10+3.54 EUR
25+3.24 EUR
100+2.92 EUR
250+2.76 EUR
500+2.67 EUR
1000+2.59 EUR
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IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF1405 AUIRF1405.pdf
AUIRF1405
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ44N AUIRFZ44N.pdf
AUIRFZ44N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S27KL0642DPBHI023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
S27KL0642DPBHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3399 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.71 EUR
10+6.25 EUR
25+6.07 EUR
50+5.93 EUR
100+5.79 EUR
250+5.6 EUR
500+5.46 EUR
1000+5.33 EUR
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IQE018N06NM6SCATMA1 infineon-iqe018n06nm6sc-datasheet-en.pdf
IQE018N06NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.72 EUR
10+3.73 EUR
100+2.6 EUR
500+2.12 EUR
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ISC019N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+36.84 EUR
10+34.13 EUR
25+33.05 EUR
50+32.24 EUR
100+31.44 EUR
250+30.4 EUR
500+29.62 EUR
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IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+1.2 EUR
Mindestbestellmenge: 5000 Stücke
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IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 6632 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.29 EUR
10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 5 Stücke
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GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+3.68 EUR
Mindestbestellmenge: 250 Stücke
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GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.62 EUR
10+5.75 EUR
100+4.11 EUR
Mindestbestellmenge: 3 Stücke
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IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1521 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
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IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1113 Stücke:
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AnzahlPreis
2+15 EUR
10+10.19 EUR
100+7.47 EUR
500+6.33 EUR
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GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
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AnzahlPreis
250+6.41 EUR
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GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 283 Stücke:
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AnzahlPreis
2+14.03 EUR
10+9.58 EUR
100+7.08 EUR
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FP25R12W2T4BOMA1 Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c
Hersteller: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Packaging: Bulk
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+58.64 EUR
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S25FL512SAGMFAG13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFAG13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IPTC017N10NM5LF2ATMA1 Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8
IPTC017N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Produkt ist nicht verfügbar
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IPTC017N10NM5LF2ATMA1 Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8
IPTC017N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 1620 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.36 EUR
10+8.31 EUR
100+6.03 EUR
500+5.05 EUR
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IMSQ120R026M2HHXUMA1 DS_IMSQ120R026M2HH_v1.00_en.pdf
IMSQ120R026M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
Produkt ist nicht verfügbar
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IMSQ120R026M2HHXUMA1 DS_IMSQ120R026M2HH_v1.00_en.pdf
IMSQ120R026M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
auf Bestellung 653 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+41.73 EUR
10+30.08 EUR
100+23.95 EUR
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IPC020N10L3X1SA1 DS_IPC020N10L3_2_5.pdf?fileId=5546d4614755559a01477c39579c626c
IPC020N10L3X1SA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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BGS12PN10E6327XTSA1 Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1
BGS12PN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
auf Bestellung 50 Stücke:
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AnzahlPreis
50+8.97 EUR
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AUIRF1404STRL auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404 auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372
AUIRF1404
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404S auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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REFDOORCONTROLTOBO1 infineon-door-control-module-reference-design-preview-usermanual-en.pdf
REFDOORCONTROLTOBO1
Hersteller: Infineon Technologies
Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
auf Bestellung 2 Stücke:
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AnzahlPreis
1+493.63 EUR
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AUIRFC8407TR
Hersteller: Infineon Technologies
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
auf Bestellung 116606 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
363+1.24 EUR
Mindestbestellmenge: 363 Stücke
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EVAL2KWSICIHTOBO1
Hersteller: Infineon Technologies
Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
auf Bestellung 2 Stücke:
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AnzahlPreis
1+502.71 EUR
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IAUMN10S5N017GAUMA1 Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a
IAUMN10S5N017GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.04 EUR
10+4.57 EUR
25+4.2 EUR
100+3.79 EUR
250+3.6 EUR
500+3.49 EUR
1000+3.39 EUR
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AUIRFZ34N AUIRFZ34N.pdf
AUIRFZ34N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IR21531PBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
auf Bestellung 23526 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
140+3.23 EUR
Mindestbestellmenge: 140 Stücke
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CY9BF217TBGL-GK7E1 Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF217TBGL-GK7E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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REFAUDIOGANB750WTOBO1 REFAUDIOGANB750WTOBO1
REFAUDIOGANB750WTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
Produkt ist nicht verfügbar
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IM241S6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241S6S1BALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.24 EUR
15+6.83 EUR
30+6.45 EUR
105+5.93 EUR
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IM241S6S1JALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241S6S1JALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.24 EUR
15+6.83 EUR
30+6.45 EUR
105+5.93 EUR
Mindestbestellmenge: 2 Stücke
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IM241M6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241M6S1BALMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
auf Bestellung 232 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.03 EUR
15+7.44 EUR
30+7.04 EUR
105+6.48 EUR
Mindestbestellmenge: 2 Stücke
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