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IRG4BC30SPBF IRG4BC30SPBF Infineon Technologies irg4bc30spbf.pdf?fileId=5546d462533600a40153563fe53a2281 description Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AUIRG4BC30S-S AUIRG4BC30S-S Infineon Technologies AUIRG4BC30S-S%28L%29.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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FS02MR08A7MA2BHPSA1 Infineon Technologies infineon-fs02mr08a7ma2b-datasheet-en.pdf Description: FS02MR08A7MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 430A
Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 470V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 430A, 18V
Gate Charge (Qg) (Max) @ Vgs: 890nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 120mA
auf Bestellung 3 Stücke:
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1+1162.8 EUR
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FS01MR08A8MA2CHPSA1 FS01MR08A8MA2CHPSA1 Infineon Technologies infineon-fs01mr08a8ma2c-datasheet-en.pdf Description: FS01MR08A8MA2CHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 43000pF @ 470V
Rds On (Max) @ Id, Vgs: 1.69mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1500nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 200mA
auf Bestellung 6 Stücke:
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CY8C4025LQIT412TXUMA1 CY8C4025LQIT412TXUMA1 Infineon Technologies infineon-psoc-4000s-datasheet-datasheet-en.pdf Description: HMI-GROWTH PSOC4
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
Produkt ist nicht verfügbar
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S26KL512SDABHV020 S26KL512SDABHV020 Infineon Technologies infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BC817-16 BC817-16 Infineon Technologies INFNS12118-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT23-3 (TO-236)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
auf Bestellung 19999 Stücke:
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8955+0.045 EUR
Mindestbestellmenge: 8955
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V10035200NHPSA1 V10035200NHPSA1 Infineon Technologies Infineon-V100-35.200N-DS-v03_01-EN.pdf?fileId=5546d46145f1f3a401461e1f98d71da3 Description: CLAMP DISK DEVICES 75MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.543" (90.00mm)
Shape: Rectangular
Type: Mount
Width: 3.543" (90.00mm)
Height: 2.362" (60.00mm)
Produkt ist nicht verfügbar
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XMC1402Q040X0128AAXTMA1 XMC1402Q040X0128AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+2.45 EUR
Mindestbestellmenge: 5000
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XMC1402Q040X0128AAXTMA1 XMC1402Q040X0128AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
auf Bestellung 5000 Stücke:
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4+4.72 EUR
10+3.53 EUR
25+3.23 EUR
100+2.91 EUR
250+2.75 EUR
500+2.68 EUR
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WLC112568LQXQTXUMA1 WLC112568LQXQTXUMA1 Infineon Technologies infineon-wlc1125-wireless-charging-ic-wlc-transmitter-25-w-datasheet-en.pdf Description: WLC112568LQXQTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 4.6V ~ 24V
Applications: Wireless Charging
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68-800
Produkt ist nicht verfügbar
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WLC112568LQXQTXUMA1 WLC112568LQXQTXUMA1 Infineon Technologies infineon-wlc1125-wireless-charging-ic-wlc-transmitter-25-w-datasheet-en.pdf Description: WLC112568LQXQTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 4.6V ~ 24V
Applications: Wireless Charging
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68-800
Produkt ist nicht verfügbar
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WLC112568LQXQXQSA1 WLC112568LQXQXQSA1 Infineon Technologies infineon-wlc1125-wireless-charging-ic-wlc-transmitter-25-w-datasheet-en.pdf Description: WLC112568LQXQXQSA1
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 4.6V ~ 24V
Applications: Wireless Charging
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68-800
Produkt ist nicht verfügbar
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BSM300GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 2 Stücke:
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1+614.8 EUR
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BSM300GB120DLCHOSA1 Infineon Technologies Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Produkt ist nicht verfügbar
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IMC101TF064XUMA1 IMC101TF064XUMA1 Infineon Technologies Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660 Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 1689 Stücke:
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106+4.29 EUR
Mindestbestellmenge: 106
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IGD70R270D2SAUMA1 IGD70R270D2SAUMA1 Infineon Technologies infineon-igd70r270d2s-datasheet-en.pdf Description: GANFET N-CH 700V 5.8A T0252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TO252-3-U03
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
Produkt ist nicht verfügbar
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IGD70R270D2SAUMA1 IGD70R270D2SAUMA1 Infineon Technologies infineon-igd70r270d2s-datasheet-en.pdf Description: GANFET N-CH 700V 5.8A T0252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TO252-3-U03
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
auf Bestellung 2201 Stücke:
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6+3.24 EUR
10+2.06 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.02 EUR
Mindestbestellmenge: 6
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CY7C1041CV33-12BAXE CY7C1041CV33-12BAXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb80544500&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IHW50N65R6XKSA1 IHW50N65R6XKSA1 Infineon Technologies Infineon-IHW50N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e1c8ed727b Description: IGBT 650V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
auf Bestellung 13580 Stücke:
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166+2.71 EUR
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CY37128VP160-83AXC CY37128VP160-83AXC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 128MC 15NS 160TQFP
Packaging: Tray
Package / Case: 160-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 128
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 15 ns
Supplier Device Package: 160-TQFP (24x24)
Voltage Supply - Internal: 3V ~ 3.6V
Number of I/O: 133
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFZ24NSTRL AUIRFZ24NSTRL Infineon Technologies auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRF540ZLPBF IRF540ZLPBF Infineon Technologies irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6 Description: IRF540Z - 36A, 100V, 0.0265OHM,
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 50 Stücke:
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50+8.97 EUR
Mindestbestellmenge: 50
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CY7C68013A-100AXI CY7C68013A-100AXI Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
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CY7C68013A-128AXI CY7C68013A-128AXI Infineon Technologies download Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMT65R026M2HXUMA1 IMT65R026M2HXUMA1 Infineon Technologies Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
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IMT65R026M2HXUMA1 IMT65R026M2HXUMA1 Infineon Technologies Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
auf Bestellung 1345 Stücke:
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1+18.04 EUR
10+12.5 EUR
100+9.86 EUR
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IMT65R50M2HXUMA1 IMT65R50M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+6.52 EUR
Mindestbestellmenge: 2000
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IMT65R50M2HXUMA1 IMT65R50M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 2000 Stücke:
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IMT65R040M2HXUMA1 IMT65R040M2HXUMA1 Infineon Technologies Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R040M2HXUMA1 IMT65R040M2HXUMA1 Infineon Technologies Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R050M2HXUMA1 IMT65R050M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R050M2HXUMA1 IMT65R050M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R075M2HXUMA1 IMT65R075M2HXUMA1 Infineon Technologies infineon-imt65r075m2h-datasheet-en.pdf Description: SICFET N-CH 650V 33.7A HSOF-8
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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AUIRF9540N AUIRF9540N Infineon Technologies AUIRF9540N.pdf Description: MOSFET P-CH 100V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SPP02N60C3XKSA1 SPP02N60C3XKSA1 Infineon Technologies Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 73020 Stücke:
Lieferzeit 10-14 Tag (e)
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SPB02N60C3ATMA1 SPB02N60C3ATMA1 Infineon Technologies SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d Description: MOSFET N-CH 650V 1.8A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
322+1.41 EUR
Mindestbestellmenge: 322
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ITS6080SEPDXUMA1 ITS6080SEPDXUMA1 Infineon Technologies infineon-its6080s-ep-d-datasheet-en.pdf Description: PROFET
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.57 EUR
Mindestbestellmenge: 3000
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ITS6080SEPDXUMA1 ITS6080SEPDXUMA1 Infineon Technologies infineon-its6080s-ep-d-datasheet-en.pdf Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.72 EUR
10+3.54 EUR
25+3.24 EUR
100+2.92 EUR
250+2.76 EUR
500+2.67 EUR
1000+2.59 EUR
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF1405 AUIRF1405 Infineon Technologies AUIRF1405.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ44N AUIRFZ44N Infineon Technologies AUIRFZ44N.pdf Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S27KL0642DPBHI023 S27KL0642DPBHI023 Infineon Technologies Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3399 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.71 EUR
10+6.25 EUR
25+6.07 EUR
50+5.93 EUR
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500+5.46 EUR
1000+5.33 EUR
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IQE018N06NM6SCATMA1 IQE018N06NM6SCATMA1 Infineon Technologies infineon-iqe018n06nm6sc-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
10+3.73 EUR
100+2.6 EUR
500+2.12 EUR
Mindestbestellmenge: 4
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ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.84 EUR
10+34.13 EUR
25+33.05 EUR
50+32.24 EUR
100+31.44 EUR
250+30.4 EUR
500+29.62 EUR
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IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 5000 Stücke:
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5000+1.2 EUR
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IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 6632 Stücke:
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5+4.29 EUR
10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.44 EUR
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GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
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GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 462 Stücke:
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3+8.62 EUR
10+5.75 EUR
100+4.11 EUR
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IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1521 Stücke:
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2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
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IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1188 Stücke:
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2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
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GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
250+6.41 EUR
Mindestbestellmenge: 250
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GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.03 EUR
10+9.58 EUR
100+7.08 EUR
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IRG4BC30SPBF description irg4bc30spbf.pdf?fileId=5546d462533600a40153563fe53a2281
IRG4BC30SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AUIRG4BC30S-S AUIRG4BC30S-S%28L%29.pdf
AUIRG4BC30S-S
Hersteller: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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FS02MR08A7MA2BHPSA1 infineon-fs02mr08a7ma2b-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: FS02MR08A7MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 430A
Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 470V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 430A, 18V
Gate Charge (Qg) (Max) @ Vgs: 890nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 120mA
auf Bestellung 3 Stücke:
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Anzahl Preis
1+1162.8 EUR
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FS01MR08A8MA2CHPSA1 infineon-fs01mr08a8ma2c-datasheet-en.pdf
FS01MR08A8MA2CHPSA1
Hersteller: Infineon Technologies
Description: FS01MR08A8MA2CHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 43000pF @ 470V
Rds On (Max) @ Id, Vgs: 1.69mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1500nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 200mA
auf Bestellung 6 Stücke:
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Anzahl Preis
1+1700.07 EUR
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CY8C4025LQIT412TXUMA1 infineon-psoc-4000s-datasheet-datasheet-en.pdf
CY8C4025LQIT412TXUMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
Produkt ist nicht verfügbar
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S26KL512SDABHV020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL512SDABHV020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BC817-16 INFNS12118-1.pdf?t.download=true&u=5oefqw
BC817-16
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT23-3 (TO-236)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
auf Bestellung 19999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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V10035200NHPSA1 Infineon-V100-35.200N-DS-v03_01-EN.pdf?fileId=5546d46145f1f3a401461e1f98d71da3
V10035200NHPSA1
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.543" (90.00mm)
Shape: Rectangular
Type: Mount
Width: 3.543" (90.00mm)
Height: 2.362" (60.00mm)
Produkt ist nicht verfügbar
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XMC1402Q040X0128AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0128AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+2.45 EUR
Mindestbestellmenge: 5000
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XMC1402Q040X0128AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0128AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.72 EUR
10+3.53 EUR
25+3.23 EUR
100+2.91 EUR
250+2.75 EUR
500+2.68 EUR
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WLC112568LQXQTXUMA1 infineon-wlc1125-wireless-charging-ic-wlc-transmitter-25-w-datasheet-en.pdf
WLC112568LQXQTXUMA1
Hersteller: Infineon Technologies
Description: WLC112568LQXQTXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 4.6V ~ 24V
Applications: Wireless Charging
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68-800
Produkt ist nicht verfügbar
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WLC112568LQXQTXUMA1 infineon-wlc1125-wireless-charging-ic-wlc-transmitter-25-w-datasheet-en.pdf
WLC112568LQXQTXUMA1
Hersteller: Infineon Technologies
Description: WLC112568LQXQTXUMA1
Packaging: Cut Tape (CT)
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 4.6V ~ 24V
Applications: Wireless Charging
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68-800
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WLC112568LQXQXQSA1 infineon-wlc1125-wireless-charging-ic-wlc-transmitter-25-w-datasheet-en.pdf
WLC112568LQXQXQSA1
Hersteller: Infineon Technologies
Description: WLC112568LQXQXQSA1
Packaging: Tray
Package / Case: 68-UFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V, 4.6V ~ 24V
Applications: Wireless Charging
Current - Supply: 87mA
Supplier Device Package: PG-VQFN-68-800
Produkt ist nicht verfügbar
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BSM300GB120DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+614.8 EUR
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BSM300GB120DLCHOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 625A 2500W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 625 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Produkt ist nicht verfügbar
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IMC101TF064XUMA1 Infineon-IMC100-DS-v01_02-EN.pdf?fileId=5546d46265487f7b016584a0147e7660
IMC101TF064XUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 3V-5.5V 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller
Current - Output: 50mA
Interface: Analog, PWM
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 5.5V
Applications: Home Appliance
Supplier Device Package: PG-LQFP-64-26
Motor Type - AC, DC: AC, Synchronous
auf Bestellung 1689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
106+4.29 EUR
Mindestbestellmenge: 106
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IGD70R270D2SAUMA1 infineon-igd70r270d2s-datasheet-en.pdf
IGD70R270D2SAUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 700V 5.8A T0252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TO252-3-U03
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
Produkt ist nicht verfügbar
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IGD70R270D2SAUMA1 infineon-igd70r270d2s-datasheet-en.pdf
IGD70R270D2SAUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 700V 5.8A T0252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 18W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TO252-3-U03
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
auf Bestellung 2201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
10+2.06 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.02 EUR
Mindestbestellmenge: 6
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CY7C1041CV33-12BAXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM_Datasheet-AdditionalTechnicalInformation-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb80544500&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CY7C1041CV33-12BAXE
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IHW50N65R6XKSA1 Infineon-IHW50N65R6-DataSheet-v01_20-EN.pdf?fileId=5546d46277fc7439017826e1c8ed727b
IHW50N65R6XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 50A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 21ns/261ns
Switching Energy: 1.5mJ (on), 660µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 199 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 251 W
auf Bestellung 13580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
166+2.71 EUR
Mindestbestellmenge: 166
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CY37128VP160-83AXC Ultra%20370000%20CPLD%20Family.pdf
CY37128VP160-83AXC
Hersteller: Infineon Technologies
Description: IC CPLD 128MC 15NS 160TQFP
Packaging: Tray
Package / Case: 160-LQFP
Mounting Type: Surface Mount
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Number of Macrocells: 128
Operating Temperature: 0°C ~ 70°C (TA)
Delay Time tpd(1) Max: 15 ns
Supplier Device Package: 160-TQFP (24x24)
Voltage Supply - Internal: 3V ~ 3.6V
Number of I/O: 133
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFZ24NSTRL auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd
AUIRFZ24NSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRF540ZLPBF irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6
IRF540ZLPBF
Hersteller: Infineon Technologies
Description: IRF540Z - 36A, 100V, 0.0265OHM,
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+8.97 EUR
Mindestbestellmenge: 50
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CY7C68013A-100AXI download
CY7C68013A-100AXI
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 100-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C68013A-128AXI download
CY7C68013A-128AXI
Hersteller: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 128LQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, USB, USART
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Controller Series: CY7C680xx
Program Memory Type: ROMless
Applications: USB Microcontroller
Core Processor: 8051
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMT65R026M2HXUMA1 Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c
IMT65R026M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R026M2HXUMA1 Infineon-IMT65R026M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e1818913c6c
IMT65R026M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 34.5A, 20V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
auf Bestellung 1345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.04 EUR
10+12.5 EUR
100+9.86 EUR
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IMT65R50M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R50M2HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+6.52 EUR
Mindestbestellmenge: 2000
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IMT65R50M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R50M2HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 48.1A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 18.2A, 18V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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IMT65R040M2HXUMA1 Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08
IMT65R040M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R040M2HXUMA1 Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08
IMT65R040M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R050M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R050M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R050M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R050M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R075M2HXUMA1 infineon-imt65r075m2h-datasheet-en.pdf
IMT65R075M2HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 650V 33.7A HSOF-8
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
Produkt ist nicht verfügbar
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AUIRF9540N AUIRF9540N.pdf
AUIRF9540N
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SPP02N60C3XKSA1 Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f
SPP02N60C3XKSA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 73020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
429+1.06 EUR
Mindestbestellmenge: 429
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SPB02N60C3ATMA1 SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d
SPB02N60C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
322+1.41 EUR
Mindestbestellmenge: 322
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ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
ITS6080SEPDXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.57 EUR
Mindestbestellmenge: 3000
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ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
ITS6080SEPDXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.72 EUR
10+3.54 EUR
25+3.24 EUR
100+2.92 EUR
250+2.76 EUR
500+2.67 EUR
1000+2.59 EUR
Mindestbestellmenge: 4
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IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRF1405 AUIRF1405.pdf
AUIRF1405
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ44N AUIRFZ44N.pdf
AUIRFZ44N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S27KL0642DPBHI023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
S27KL0642DPBHI023
Hersteller: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
auf Bestellung 3399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.71 EUR
10+6.25 EUR
25+6.07 EUR
50+5.93 EUR
100+5.79 EUR
250+5.6 EUR
500+5.46 EUR
1000+5.33 EUR
Mindestbestellmenge: 3
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IQE018N06NM6SCATMA1 infineon-iqe018n06nm6sc-datasheet-en.pdf
IQE018N06NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.72 EUR
10+3.73 EUR
100+2.6 EUR
500+2.12 EUR
Mindestbestellmenge: 4
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ISC019N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Hersteller: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.84 EUR
10+34.13 EUR
25+33.05 EUR
50+32.24 EUR
100+31.44 EUR
250+30.4 EUR
500+29.62 EUR
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IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.2 EUR
Mindestbestellmenge: 5000
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IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
auf Bestellung 6632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
10+2.77 EUR
100+1.9 EUR
500+1.53 EUR
1000+1.44 EUR
Mindestbestellmenge: 5
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GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+3.68 EUR
Mindestbestellmenge: 250
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GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.62 EUR
10+5.75 EUR
100+4.11 EUR
Mindestbestellmenge: 3
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IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
Mindestbestellmenge: 2
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IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
auf Bestellung 1188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.81 EUR
10+8.72 EUR
100+6.4 EUR
500+6.29 EUR
Mindestbestellmenge: 2
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GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+6.41 EUR
Mindestbestellmenge: 250
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GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.03 EUR
10+9.58 EUR
100+7.08 EUR
Mindestbestellmenge: 2
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