Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (121567) > Seite 778 nach 2027
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AUIRF1404ZS | Infineon Technologies |
Description: MOSFET N-CH 40V 160A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AUIRF1404ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 40V 160A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AB (D2PAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FF650R17IE4PBOSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 650APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 650 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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FF6MR12KM1HHPSA1 | Infineon Technologies |
Description: MOSFETPackaging: Tray |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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IPA70R450P7SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 700V 10A TO220Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Power Dissipation (Max): 22.7W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TO220-FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V |
auf Bestellung 31924 Stücke: Lieferzeit 10-14 Tag (e) |
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IPU95R450P7AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 14A TO251-3Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 360µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V |
auf Bestellung 1339 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS21084PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14DIPPackaging: Bulk Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-DIP Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
auf Bestellung 10900 Stücke: Lieferzeit 10-14 Tag (e) |
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IRS21084PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-DIP Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS2101PBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: High-Side or Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS2109PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRS21094PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-DIP Rise / Fall Time (Typ): 100ns, 35ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AIKYX200N75CP2ALSA1 | Infineon Technologies |
Description: AIKYX200N75CP2ALSA1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A Supplier Device Package: PG-TO247-4-13 Td (on/off) @ 25°C: 79ns/268ns Switching Energy: 7.6mJ (on), 6.4mJ (off) Test Condition: 470V, 200A, 5Ohm, 15V Gate Charge: 1.27 µC Grade: Automotive Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Pulsed (Icm): 600 A Power - Max: 938 W Qualification: AEC-Q101 |
auf Bestellung 353 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKYX160N75CP2ALSA1 | Infineon Technologies |
Description: AIKYX160N75CP2ALSA1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A Supplier Device Package: PG-TO247-4-13 Td (on/off) @ 25°C: 64ns/234ns Switching Energy: 5.5mJ (on), 4.9mJ (off) Test Condition: 470V, 160A, 5Ohm, 15V Gate Charge: 975 nC Grade: Automotive Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Pulsed (Icm): 480 A Power - Max: 750 W Qualification: AEC-Q101 |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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ISZ023N06LM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 38µA Supplier Device Package: PG-TSDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ISZ025N06NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 38µA Supplier Device Package: PG-TSDSON-8-34 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC025N06LM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 38µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V |
auf Bestellung 5933 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUC100N08S5N034ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 132A (Tj) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 78µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FM28V020-TGTR | Infineon Technologies |
Description: IC FRAM 256KBIT PARALLEL 32STSOPPackaging: Tape & Reel (TR) Package / Case: 32-TFSOP (0.465", 11.80mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Technology: FRAM (Ferroelectric RAM) Memory Format: FRAM Supplier Device Package: 32-sTSOP Write Cycle Time - Word, Page: 140ns Memory Interface: Parallel Access Time: 140 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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IKWH100N75EH7XKSA1 | Infineon Technologies |
Description: INDUSTRY 14Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/237ns Switching Energy: 3.2mJ (on), 1.8mJ (off) Test Condition: 400V, 100A, 10Ohm, 15V Gate Charge: 205 nC Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Pulsed (Icm): 400 A Power - Max: 429 W |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC320N12LM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V Power Dissipation (Max): 3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: SuperSO8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ISC320N12LM6ATMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V Power Dissipation (Max): 3W (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: SuperSO8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V |
auf Bestellung 4453 Stücke: Lieferzeit 10-14 Tag (e) |
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CY23FS04ZXC | Infineon Technologies |
Description: IC FANOUT DIST 16TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 166.7MHz Type: Fanout Distribution, Multiplexer, Zero Delay Buffer Input: LVCMOS, LVTTL, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.5V, 3.3V Ratio - Input:Output: 3:4 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 209 Stücke: Lieferzeit 10-14 Tag (e) |
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| IR2085STRPBFXUMA1 | Infineon Technologies |
Description: DCDC CONTROLLER Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BTH500601LUAAUMA1 | Infineon Technologies |
Description: BTH500601LUAAUMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 6mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 15.9A Ratio - Input:Output: 1:1 Supplier Device Package: PG-HSOF-8-6 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BTH500601LUAAUMA1 | Infineon Technologies |
Description: BTH500601LUAAUMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 6mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 15.9A Ratio - Input:Output: 1:1 Supplier Device Package: PG-HSOF-8-6 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 703 Stücke: Lieferzeit 10-14 Tag (e) |
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ISC060N06NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 14µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V |
auf Bestellung 4727 Stücke: Lieferzeit 10-14 Tag (e) |
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SAF-XE162FN-40F80L AA | Infineon Technologies |
Description: IC MCU 16BIT 320KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Number of I/O: 40 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SAK-XE162FN-24F80L AA | Infineon Technologies |
Description: IC MCU 16BIT 192KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 192KB (192K x 8) RAM Size: 26K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Number of I/O: 40 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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XC2734X40F80LRABKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32B 320KB FLASH 64LQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Number of I/O: 38 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1900 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4025LQI-S401T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 24QFNPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 19 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4025LQI-S401T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 24QFNPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 19 DigiKey Programmable: Not Verified |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4025LQAS411XQLA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b SAR; D/A 1x7b, 1x8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Grade: Automotive Number of I/O: 19 Qualification: AEC-Q100 |
auf Bestellung 4900 Stücke: Lieferzeit 10-14 Tag (e) |
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XC822MT1FRAAAKXUMA1 | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 16TSSOPPackaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 4x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Connectivity: I2C, SSC, UART/USART Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Supplier Device Package: PG-TSSOP-16-1 Number of I/O: 13 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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DF1000R17IE4PBPSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 1000A AG-PRIME3-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A NTC Thermistor: Yes Supplier Device Package: AG-PRIME3-1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1000 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 1000000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 81 nF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KITXMC52EVKTOBO1 | Infineon Technologies |
Description: KITXMC52EVKTOBO1Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Utilized IC / Part: XMC52 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AUIRLZ44ZL | Infineon Technologies |
Description: MOSFET N-CH 55V 51A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AIGBG25N120S7ATMA1 | Infineon Technologies |
Description: AIGBG25N120S7ATMA1Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: PG-TO263-7-12 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12.9ns/120ns Switching Energy: 200µJ (on), 1.47mJ (off) Test Condition: 800V, 25A, 4.5Ohm, 15V Gate Charge: 158 nC Grade: Automotive Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 250 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AIGBG25N120S7ATMA1 | Infineon Technologies |
Description: AIGBG25N120S7ATMA1Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: PG-TO263-7-12 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12.9ns/120ns Switching Energy: 200µJ (on), 1.47mJ (off) Test Condition: 800V, 25A, 4.5Ohm, 15V Gate Charge: 158 nC Grade: Automotive Current - Collector (Ic) (Max): 55 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 250 W Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRF6802SDTRPBF | Infineon Technologies |
Description: IRF6802 - 12V-300V N-CHANNEL POWPackaging: Bulk |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF6802SDTRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 25V 16A DIRECTFETSAPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 35µA Supplier Device Package: DIRECTFET™ SA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY8C4147LDAS283XQLA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 48-QFN (7x7) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4147LDAS283TXUMA1 | Infineon Technologies |
Description: PSOC4 - GENERALPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT Supplier Device Package: 48-QFN (7x7) Grade: Automotive Number of I/O: 40 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR3725MTRPBF | Infineon Technologies |
Description: IC PWR MONITOR INPUT 12-DFNPackaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 3.135V ~ 3.465V Applications: Power Supply Monitor Supplier Device Package: 12-DFN (4x3) Current - Supply: 700 µA DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IR3725MTRPBF | Infineon Technologies |
Description: IC PWR MONITOR INPUT 12-DFNPackaging: Bulk Package / Case: 12-VFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C Voltage - Supply: 3.135V ~ 3.465V Applications: Power Supply Monitor Supplier Device Package: 12-DFN (4x3) Current - Supply: 700 µA DigiKey Programmable: Not Verified |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DZ3600S17K3B2NOSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1700V AIHM190-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 3 Independent Supplier Device Package: A-IHM190-1 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 3600 A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL01GS12TFIV20 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 56TSOPPackaging: Tray Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 120 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 182 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4146LWEHVS115XXQLA1 | Infineon Technologies |
Description: PSOC BASED - HV FAMILYPackaging: Tray Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT Supplier Device Package: 56-WQFN (8x8) Grade: Automotive Number of I/O: 41 Qualification: AEC-Q100 |
auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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CY7C4221-15AXC | Infineon Technologies |
Description: IC FIFO SYNC 1KX9 10NS 32TQFPPackaging: Tray Package / Case: 32-TQFP Mounting Type: Surface Mount Function: Synchronous Memory Size: 9K (1K x 9) Operating Temperature: 0°C ~ 70°C Data Rate: 66.7MHz Access Time: 10ns Current - Supply (Max): 35mA Supplier Device Package: 32-TQFP (7x7) Bus Directional: Uni-Directional Expansion Type: Depth, Width Programmable Flags Support: Yes Retransmit Capability: No FWFT Support: No Voltage - Supply: 4.5 V ~ 5.5 V DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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AUIRFR3504 | Infineon Technologies |
Description: MOSFET N-CH 40V 56A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPP055N08NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
auf Bestellung 182800 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9350BXSJXTMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO880Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-80 Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9350BXSJXTMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO880Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-80 Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2502 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9AF341LAPMC1-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 96KB 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 51 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KITFX20FMC001TOBO1 | Infineon Technologies |
Description: EZ-USB FX20 DEV KITPackaging: Box Type: Interface Contents: Board(s), Cable(s) Utilized IC / Part: FX20 |
auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD55421IVREGEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD5542-1Packaging: Bulk Features: Dimmable Voltage - Output: 2V ~ 51V Voltage - Input: 5.5V ~ 35V Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: TLD5542-1 Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD5191IVREGEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD5191ESPackaging: Bulk Features: Dimmable Voltage - Output: 2.15V ~ 41.8V Voltage - Input: 6.2V ~ 35V Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: TLD5191ES Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD5191HB2WEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD5191ESPackaging: Bulk Features: Dimmable Voltage - Output: 6.2V ~ 23.6V Voltage - Input: 6.2V ~ 35V Contents: Board(s) Current - Output / Channel: 1A Utilized IC / Part: TLD5191ES Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG200-24LQXI | Infineon Technologies |
Description: IC MCU 32K FLASH 24UQFNPackaging: Tray Package / Case: 24-UQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (32kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 24-QFN Number of I/O: 20 DigiKey Programmable: Not Verified |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG200-32LQXI | Infineon Technologies |
Description: IC MCU 32K FLASH 32UQFNPackaging: Tray Package / Case: 32-UQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (32kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 32-QFN Number of I/O: 28 DigiKey Programmable: Not Verified |
auf Bestellung 618 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG201-32LQXI | Infineon Technologies |
Description: IC MCU 16K FLASH PSOC 32UQFNPackaging: Tray Package / Case: 32-UQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (16kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 32-QFN Number of I/O: 28 DigiKey Programmable: Not Verified |
auf Bestellung 488 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1404ZS |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRF1404ZSTRL |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FF650R17IE4PBOSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 795.38 EUR |
| FF6MR12KM1HHPSA1 |
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auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 289.17 EUR |
| 10+ | 269.55 EUR |
| IPA70R450P7SXKSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 31924 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 396+ | 1.13 EUR |
| IPU95R450P7AKMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.73 EUR |
| 75+ | 2.21 EUR |
| 150+ | 2 EUR |
| 525+ | 1.7 EUR |
| 1050+ | 1.57 EUR |
| IRS21084PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 10900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 105+ | 4.25 EUR |
| IRS21084PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2101PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2109PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRS21094PBF |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AIKYX200N75CP2ALSA1 |
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Hersteller: Infineon Technologies
Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 26.21 EUR |
| 30+ | 16.19 EUR |
| 120+ | 14 EUR |
| AIKYX160N75CP2ALSA1 |
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Hersteller: Infineon Technologies
Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.82 EUR |
| 30+ | 12.69 EUR |
| ISZ023N06LM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISZ025N06NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 11+ | 1.65 EUR |
| 25+ | 1.5 EUR |
| 100+ | 1.33 EUR |
| 250+ | 1.25 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.16 EUR |
| 2500+ | 1.12 EUR |
| ISC025N06LM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
auf Bestellung 5933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.22 EUR |
| 10+ | 2.36 EUR |
| 25+ | 2.15 EUR |
| 100+ | 1.91 EUR |
| 250+ | 1.8 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.68 EUR |
| 2500+ | 1.62 EUR |
| IAUC100N08S5N034ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FM28V020-TGTR |
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Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 256KBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 14.82 EUR |
| IKWH100N75EH7XKSA1 |
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Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/237ns
Switching Energy: 3.2mJ (on), 1.8mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/237ns
Switching Energy: 3.2mJ (on), 1.8mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.32 EUR |
| 10+ | 8.37 EUR |
| ISC320N12LM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| ISC320N12LM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.11 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.6 EUR |
| CY23FS04ZXC |
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Hersteller: Infineon Technologies
Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.7MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 3:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.7MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 3:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.13 EUR |
| 10+ | 5.42 EUR |
| 96+ | 4.54 EUR |
| 192+ | 4.36 EUR |
| IR2085STRPBFXUMA1 |
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTH500601LUAAUMA1 |
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Hersteller: Infineon Technologies
Description: BTH500601LUAAUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: BTH500601LUAAUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BTH500601LUAAUMA1 |
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Hersteller: Infineon Technologies
Description: BTH500601LUAAUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: BTH500601LUAAUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.36 EUR |
| 10+ | 6.35 EUR |
| 25+ | 5.85 EUR |
| 100+ | 5.29 EUR |
| 250+ | 5.03 EUR |
| 500+ | 4.87 EUR |
| ISC060N06NM6ATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
auf Bestellung 4727 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.43 EUR |
| 18+ | 1.02 EUR |
| 25+ | 0.92 EUR |
| 100+ | 0.8 EUR |
| 250+ | 0.75 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.66 EUR |
| SAF-XE162FN-40F80L AA |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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| SAK-XE162FN-24F80L AA |
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Hersteller: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 192KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
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Stück im Wert von UAH
| XC2734X40F80LRABKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1900 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4025LQI-S401T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4025LQI-S401T |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.57 EUR |
| 10+ | 2.64 EUR |
| 25+ | 2.41 EUR |
| 100+ | 2.16 EUR |
| 250+ | 2.04 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.91 EUR |
| CY8C4025LQAS411XQLA1 |
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Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Number of I/O: 19
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Number of I/O: 19
Qualification: AEC-Q100
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.6 EUR |
| 10+ | 5 EUR |
| 25+ | 4.61 EUR |
| 100+ | 4.17 EUR |
| 490+ | 3.84 EUR |
| 980+ | 3.73 EUR |
| 1470+ | 3.68 EUR |
| 2940+ | 3.61 EUR |
| XC822MT1FRAAAKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Number of I/O: 13
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DF1000R17IE4PBPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 1000A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Description: IGBT MOD 1700V 1000A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| KITXMC52EVKTOBO1 |
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Hersteller: Infineon Technologies
Description: KITXMC52EVKTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC52
Description: KITXMC52EVKTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC52
Produkt ist nicht verfügbar
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| AUIRLZ44ZL |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| AIGBG25N120S7ATMA1 |
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Hersteller: Infineon Technologies
Description: AIGBG25N120S7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
Description: AIGBG25N120S7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| AIGBG25N120S7ATMA1 |
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Hersteller: Infineon Technologies
Description: AIGBG25N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
Description: AIGBG25N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRF6802SDTRPBF |
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auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 233+ | 1.92 EUR |
| IRF6802SDTRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 16A DIRECTFETSA
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: DIRECTFET™ SA
Description: MOSFET 2N-CH 25V 16A DIRECTFETSA
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: DIRECTFET™ SA
Produkt ist nicht verfügbar
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| CY8C4147LDAS283XQLA1 |
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Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2600 Stücke
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| CY8C4147LDAS283TXUMA1 |
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Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| IR3725MTRPBF |
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Hersteller: Infineon Technologies
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| IR3725MTRPBF |
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Hersteller: Infineon Technologies
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 157+ | 2.86 EUR |
| DZ3600S17K3B2NOSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1700V AIHM190-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: A-IHM190-1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 3600 A
Description: DIODE MODULE GP 1700V AIHM190-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: A-IHM190-1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 3600 A
Produkt ist nicht verfügbar
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| S29GL01GS12TFIV20 |
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Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 182 Stücke
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| CY8C4146LWEHVS115XXQLA1 |
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Hersteller: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 56-WQFN (8x8)
Grade: Automotive
Number of I/O: 41
Qualification: AEC-Q100
Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 56-WQFN (8x8)
Grade: Automotive
Number of I/O: 41
Qualification: AEC-Q100
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.89 EUR |
| 10+ | 11.59 EUR |
| 25+ | 10.77 EUR |
| 100+ | 9.87 EUR |
| 260+ | 9.42 EUR |
| 520+ | 9.16 EUR |
| 1040+ | 8.95 EUR |
| CY7C4221-15AXC |
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Hersteller: Infineon Technologies
Description: IC FIFO SYNC 1KX9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (1K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Description: IC FIFO SYNC 1KX9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (1K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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| AUIRFR3504 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
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| IPP055N08NF2SAKMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 182800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 238+ | 1.9 EUR |
| TLE9350BXSJXTMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.8 EUR |
| TLE9350BXSJXTMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 15+ | 1.21 EUR |
| 25+ | 1.09 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.9 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.83 EUR |
| CY9AF341LAPMC1-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KITFX20FMC001TOBO1 |
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Hersteller: Infineon Technologies
Description: EZ-USB FX20 DEV KIT
Packaging: Box
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: FX20
Description: EZ-USB FX20 DEV KIT
Packaging: Box
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: FX20
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 314.92 EUR |
| TLD55421IVREGEVALTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5542-1
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2V ~ 51V
Voltage - Input: 5.5V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5542-1
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD5542-1
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2V ~ 51V
Voltage - Input: 5.5V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5542-1
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 310.13 EUR |
| TLD5191IVREGEVALTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2.15V ~ 41.8V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2.15V ~ 41.8V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 299.71 EUR |
| TLD5191HB2WEVALTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 6.2V ~ 23.6V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 6.2V ~ 23.6V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 465.36 EUR |
| CY8CTMG200-24LQXI |
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Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.85 EUR |
| 10+ | 9.97 EUR |
| 25+ | 9.25 EUR |
| 100+ | 8.46 EUR |
| 490+ | 7.87 EUR |
| CY8CTMG200-32LQXI |
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Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 32K FLASH 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.16 EUR |
| 10+ | 10.23 EUR |
| 25+ | 9.49 EUR |
| 100+ | 8.68 EUR |
| 490+ | 8.07 EUR |
| CY8CTMG201-32LQXI |
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Hersteller: Infineon Technologies
Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.32 EUR |
| 10+ | 10.35 EUR |
| 25+ | 9.61 EUR |
| 100+ | 8.79 EUR |









































