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IGI60L5050B1MXUMA1 Infineon Technologies infineon-igi60l5050b1m-datasheet-en.pdf Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
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IGI60L5050B1MXUMA1 Infineon Technologies infineon-igi60l5050b1m-datasheet-en.pdf Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
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IKZA75N65RH5XKSA1 IKZA75N65RH5XKSA1 Infineon Technologies Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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AUIRFZ24NSTRL AUIRFZ24NSTRL Infineon Technologies auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C4146AZIT403XQMA1 CY8C4146AZIT403XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
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CY8C4146AZIT405XQMA1 CY8C4146AZIT405XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
Produkt ist nicht verfügbar
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CY8C4147AZIT403XQMA1 CY8C4147AZIT403XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
Produkt ist nicht verfügbar
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CY8C4147AZIT405XQMA1 CY8C4147AZIT405XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
Produkt ist nicht verfügbar
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IRGB4060DPBF IRGB4060DPBF Infineon Technologies IRGB4060DPBF.pdf description Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
Produkt ist nicht verfügbar
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CY8CLED04-68LTXI CY8CLED04-68LTXI Infineon Technologies CY8CLED04.pdf Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
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CYT4DNJBMCQ1BZSGST CYT4DNJBMCQ1BZSGST Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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AUIRLR024N AUIRLR024N Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024NTRL AUIRLR024NTRL Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024Z AUIRLR024Z Infineon Technologies auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561 Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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IRS2184PBF IRS2184PBF Infineon Technologies irs2184.pdf?fileId=5546d462533600a401535676d8da27db Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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SAF-XE164GN-24F80L AA SAF-XE164GN-24F80L AA Infineon Technologies Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9 Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
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PSC3M5FDS2ACQ1AQSA1 PSC3M5FDS2ACQ1AQSA1 Infineon Technologies PSC3M5FDx.pdf Description: PSOC CONTROL CHIP
Packaging: Tray
auf Bestellung 110 Stücke:
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10+8.19 EUR
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IMYR140R019M2HXLSA1 IMYR140R019M2HXLSA1 Infineon Technologies Infineon-IMYR140R019M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce35e71616a0 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
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IMYR140R029M2HXLSA1 IMYR140R029M2HXLSA1 Infineon Technologies Infineon-IMYR140R029M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce4622891d4d Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 27.3A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 1000 V
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IMYR140R024M2HXLSA1 IMYR140R024M2HXLSA1 Infineon Technologies Infineon-IMYR140R024M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce36d06f16d4 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
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BGA535N6E6327XTSA1 BGA535N6E6327XTSA1 Infineon Technologies Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20 Description: RF MMIC SUB 3 GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
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BGA535N6E6327XTSA1 BGA535N6E6327XTSA1 Infineon Technologies Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20 Description: RF MMIC SUB 3 GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
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27+0.67 EUR
28+0.64 EUR
100+0.58 EUR
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500+0.53 EUR
1000+0.5 EUR
5000+0.46 EUR
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRFSL5615PBF IRFSL5615PBF Infineon Technologies irfs5615pbf.pdf?fileId=5546d462533600a40153563a5d3521c4 Description: MOSFET N-CH 150V 33A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
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SPW20N60CFDFKSA1 SPW20N60CFDFKSA1 Infineon Technologies SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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DD89N12KHPSA1 DD89N12KHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1200V 89A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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DD171N12KKHPSA2 DD171N12KKHPSA2 Infineon Technologies Infineon-DD171N-DataSheet-v03_01-EN.pdf Description: DIODE MODULE GEN PURP 1200V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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DD350N12KHPSA1 DD350N12KHPSA1 Infineon Technologies Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50 Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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DD350N12KHPSA1 DD350N12KHPSA1 Infineon Technologies Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50 Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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ND89N12KXPSA1 Infineon Technologies infineon-dd89n-ds-en-de.pdf?folderId=db3a304412b407950112b42f6f3e4b72&fileId=db3a304412b407950112b42fb9c84d3a&location=en.Products.Power_Modules_and_Discs.Thyristor___Diode_Modules.PowerBLOCK_Rect Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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IMZA120R040M2HXKSA1 IMZA120R040M2HXKSA1 Infineon Technologies infineon-imza120r040m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fd4e92d5db4 Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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ICE184EMXUMA1 ICE184EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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ICE184EMXUMA1 ICE184EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 999 Stücke:
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ICE186EMXUMA1 ICE186EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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ICE186EMXUMA1 ICE186EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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IRFP460PBF IRFP460PBF Infineon Technologies 91237.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IRF1404ZSPBF IRF1404ZSPBF Infineon Technologies IRSDS19311-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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AUIRFZ48Z AUIRFZ48Z Infineon Technologies auirfz48z.pdf?fileId=5546d462533600a4015355ba11e01510 Description: MOSFET N-CH 55V 61A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ48N AUIRFZ48N Infineon Technologies auirfz48n.pdf?fileId=5546d462533600a4015355ba098d150e Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
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FS17MR12W2M1HB11ABPSA2 FS17MR12W2M1HB11ABPSA2 Infineon Technologies 448_FS17MR12W2M1H_B11_A.pdf Description: FS17MR12W2M1HB11ABPSA2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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SDT06S60 SDT06S60 Infineon Technologies SDP_T06S60_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b439cfc26eec description Description: DIODE SIL CARB 600V 6A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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XDPE19283B0000XUMA1 XDPE19283B0000XUMA1 Infineon Technologies Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
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XDPE19283B0000XUMA1 XDPE19283B0000XUMA1 Infineon Technologies Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
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2+9.26 EUR
10+7.11 EUR
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100+5.98 EUR
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DEMOIMRBMSCTRLV1TOBO1 DEMOIMRBMSCTRLV1TOBO1 Infineon Technologies Infineon-UG091835_mobile_robot_IMR_battery_management_control_using_DEMO_IMR_BMSCTRL_V1-UserManual-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec143879376df Description: DEMO_IMR_BMSCTRL_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: I2C/SPI Interface(s)
Embedded: Yes, MCU
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DEMOIMRBMSPWRV1TOBO1 DEMOIMRBMSPWRV1TOBO1 Infineon Technologies Infineon-UG092042_mobile_Robot_IMR_battery_management_system_power_using_DEMO_IMR_BMSPWR_V1-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec1438dbc76e3 Description: DEMO_IMR_BMSPWR_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU
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IPD50N06S4L08ATMA1 IPD50N06S4L08ATMA1 Infineon Technologies INFNS14103-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2268 Stücke:
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567+0.79 EUR
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IDW12G65C5FKSA1 IDW12G65C5FKSA1 Infineon Technologies IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f Description: DIODE SIC 650V 12A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
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ESD118B1W01005E6327XTSA1 ESD118B1W01005E6327XTSA1 Infineon Technologies ESD118B1W01005E6327XTSA1.pdf Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 0.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 7.9V (Typ)
Power - Peak Pulse: 64W
Power Line Protection: No
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250+0.07 EUR
291+0.061 EUR
349+0.051 EUR
386+0.046 EUR
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1000+0.04 EUR
2500+0.038 EUR
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AUIRFP4568 AUIRFP4568 Infineon Technologies auirfp4568.pdf?fileId=5546d462533600a4015355b1d8751458 Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1691 Stücke:
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28+16.12 EUR
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IPL60R140CFD7AUMA1 IPL60R140CFD7AUMA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Supplier Device Package: PG-VSON-4
auf Bestellung 568 Stücke:
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168+2.67 EUR
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IPD130N10NF2SATMA1 IPD130N10NF2SATMA1 Infineon Technologies Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 2000 Stücke:
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2000+0.68 EUR
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IPD130N10NF2SATMA1 IPD130N10NF2SATMA1 Infineon Technologies Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3007 Stücke:
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8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.76 EUR
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IGW30N100TFKSA1 IGW30N100TFKSA1 Infineon Technologies IGW30N100T.pdf Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
auf Bestellung 10 Stücke:
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10+44.57 EUR
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CG10148AF Infineon Technologies Description: IC FRAM
Packaging: Tray
Memory Format: FRAM
Produkt ist nicht verfügbar
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CG10146AFT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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AIMDQ75R060M1HXUMA1 AIMDQ75R060M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
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750+5.17 EUR
Mindestbestellmenge: 750
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AIMDQ75R060M1HXUMA1 AIMDQ75R060M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 967 Stücke:
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2+12.04 EUR
10+8.19 EUR
100+6.33 EUR
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AIMDQ75R016M2HXTMA1 AIMDQ75R016M2HXTMA1 Infineon Technologies Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R016M2HXTMA1 AIMDQ75R016M2HXTMA1 Infineon Technologies Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 530 Stücke:
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1+26.98 EUR
10+19.2 EUR
100+18.13 EUR
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IGI60L5050B1MXUMA1 infineon-igi60l5050b1m-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
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IGI60L5050B1MXUMA1 infineon-igi60l5050b1m-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
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IKZA75N65RH5XKSA1 Infineon-IKZA75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28779431bb
IKZA75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 310µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 2683 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+8.36 EUR
Mindestbestellmenge: 53
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AUIRFZ24NSTRL auirfz24ns.pdf?fileId=5546d462533600a4015355b9c7a414fd
AUIRFZ24NSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C4146AZIT403XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AZIT403XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
Produkt ist nicht verfügbar
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CY8C4146AZIT405XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AZIT405XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
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CY8C4147AZIT403XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4147AZIT403XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
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CY8C4147AZIT405XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4147AZIT405XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
Produkt ist nicht verfügbar
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IRGB4060DPBF description IRGB4060DPBF.pdf
IRGB4060DPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 99 W
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CY8CLED04-68LTXI CY8CLED04.pdf
CY8CLED04-68LTXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.72 EUR
10+9.88 EUR
25+9.17 EUR
Mindestbestellmenge: 2
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CYT4DNJBMCQ1BZSGST Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBMCQ1BZSGST
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Packaging: Tape & Reel (TR)
Package / Case: 327-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 320MHz
Program Memory Size: 6.19MB (6.19M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 48x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-FBGA (17x17)
Number of I/O: 168
Produkt ist nicht verfügbar
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AUIRLR024N auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLR024NTRL auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024NTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024Z auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561
AUIRLR024Z
Hersteller: Infineon Technologies
Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRS2184PBF irs2184.pdf?fileId=5546d462533600a401535676d8da27db
IRS2184PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XE164GN-24F80L AA Infineon-SAK-XE164FN-40F80LR%20AB-DataSheet-v01_40-EN.pdf?fileId=8ac78c8c8d2fe47b018dc5cc3b160cb9
SAF-XE164GN-24F80L AA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 11x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 75
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PSC3M5FDS2ACQ1AQSA1 PSC3M5FDx.pdf
PSC3M5FDS2ACQ1AQSA1
Hersteller: Infineon Technologies
Description: PSOC CONTROL CHIP
Packaging: Tray
auf Bestellung 110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.61 EUR
10+8.19 EUR
25+7.58 EUR
Mindestbestellmenge: 2
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IMYR140R019M2HXLSA1 Infineon-IMYR140R019M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce35e71616a0
IMYR140R019M2HXLSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 40.4A, 18V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 1000 V
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.55 EUR
30+15.17 EUR
120+13.13 EUR
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IMYR140R029M2HXLSA1 Infineon-IMYR140R029M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce4622891d4d
IMYR140R029M2HXLSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 27.3A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 1000 V
Produkt ist nicht verfügbar
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IMYR140R024M2HXLSA1 Infineon-IMYR140R024M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce36d06f16d4
IMYR140R024M2HXLSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
Produkt ist nicht verfügbar
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BGA535N6E6327XTSA1 Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20
BGA535N6E6327XTSA1
Hersteller: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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BGA535N6E6327XTSA1 Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20
BGA535N6E6327XTSA1
Hersteller: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
auf Bestellung 9042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
27+0.67 EUR
28+0.64 EUR
100+0.58 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.5 EUR
5000+0.46 EUR
Mindestbestellmenge: 23
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
102+4.37 EUR
Mindestbestellmenge: 102
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFSL5615PBF irfs5615pbf.pdf?fileId=5546d462533600a40153563a5d3521c4
IRFSL5615PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 904 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
203+2.19 EUR
Mindestbestellmenge: 203
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SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
SPW20N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+4.44 EUR
Mindestbestellmenge: 100
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DD89N12KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
DD89N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1200V 89A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+166.48 EUR
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DD171N12KKHPSA2 Infineon-DD171N-DataSheet-v03_01-EN.pdf
DD171N12KKHPSA2
Hersteller: Infineon Technologies
Description: DIODE MODULE GEN PURP 1200V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+228.32 EUR
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DD350N12KHPSA1 Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50
DD350N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+242.33 EUR
Mindestbestellmenge: 2
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DD350N12KHPSA1 Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50
DD350N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Produkt ist nicht verfügbar
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ND89N12KXPSA1 infineon-dd89n-ds-en-de.pdf?folderId=db3a304412b407950112b42f6f3e4b72&fileId=db3a304412b407950112b42fb9c84d3a&location=en.Products.Power_Modules_and_Discs.Thyristor___Diode_Modules.PowerBLOCK_Rect
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Produkt ist nicht verfügbar
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IMZA120R040M2HXKSA1 infineon-imza120r040m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fd4e92d5db4
IMZA120R040M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.26 EUR
30+9.07 EUR
120+7.71 EUR
Mindestbestellmenge: 2
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ICE184EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE184EMXUMA1
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Produkt ist nicht verfügbar
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ICE184EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE184EMXUMA1
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.76 EUR
10+4.35 EUR
25+4 EUR
100+3.61 EUR
250+3.42 EUR
500+3.31 EUR
Mindestbestellmenge: 4
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ICE186EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE186EMXUMA1
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.11 EUR
Mindestbestellmenge: 1000
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ICE186EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE186EMXUMA1
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.22 EUR
10+5.49 EUR
25+5.06 EUR
100+4.58 EUR
250+4.36 EUR
500+4.22 EUR
Mindestbestellmenge: 3
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IRFP460PBF 91237.pdf
IRFP460PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1404ZSPBF IRSDS19311-1.pdf?t.download=true&u=5oefqw
IRF1404ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
279+1.59 EUR
Mindestbestellmenge: 279
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AUIRFZ48Z auirfz48z.pdf?fileId=5546d462533600a4015355ba11e01510
AUIRFZ48Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 61A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 37A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFZ48N auirfz48n.pdf?fileId=5546d462533600a4015355ba098d150e
AUIRFZ48N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 69A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS17MR12W2M1HB11ABPSA2 448_FS17MR12W2M1H_B11_A.pdf
FS17MR12W2M1HB11ABPSA2
Hersteller: Infineon Technologies
Description: FS17MR12W2M1HB11ABPSA2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+146.98 EUR
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SDT06S60 description SDP_T06S60_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b439cfc26eec
SDT06S60
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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XDPE19283B0000XUMA1 Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d
XDPE19283B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
Produkt ist nicht verfügbar
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XDPE19283B0000XUMA1 Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d
XDPE19283B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
10+7.11 EUR
25+6.57 EUR
100+5.98 EUR
Mindestbestellmenge: 2
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DEMOIMRBMSCTRLV1TOBO1 Infineon-UG091835_mobile_robot_IMR_battery_management_control_using_DEMO_IMR_BMSCTRL_V1-UserManual-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec143879376df
DEMOIMRBMSCTRLV1TOBO1
Hersteller: Infineon Technologies
Description: DEMO_IMR_BMSCTRL_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: I2C/SPI Interface(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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DEMOIMRBMSPWRV1TOBO1 Infineon-UG092042_mobile_Robot_IMR_battery_management_system_power_using_DEMO_IMR_BMSPWR_V1-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec1438dbc76e3
DEMOIMRBMSPWRV1TOBO1
Hersteller: Infineon Technologies
Description: DEMO_IMR_BMSPWR_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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IPD50N06S4L08ATMA1 INFNS14103-1.pdf?t.download=true&u=5oefqw
IPD50N06S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
567+0.79 EUR
Mindestbestellmenge: 567
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IDW12G65C5FKSA1 IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f
IDW12G65C5FKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 12A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
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ESD118B1W01005E6327XTSA1 ESD118B1W01005E6327XTSA1.pdf
ESD118B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 0.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 7.9V (Typ)
Power - Peak Pulse: 64W
Power Line Protection: No
auf Bestellung 14915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
250+0.07 EUR
291+0.061 EUR
349+0.051 EUR
386+0.046 EUR
500+0.043 EUR
1000+0.04 EUR
2500+0.038 EUR
5000+0.036 EUR
Mindestbestellmenge: 125
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AUIRFP4568 auirfp4568.pdf?fileId=5546d462533600a4015355b1d8751458
AUIRFP4568
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 171A TO247AC
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 103A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10470 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1691 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+16.12 EUR
Mindestbestellmenge: 28
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IPL60R140CFD7AUMA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPL60R140CFD7AUMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Supplier Device Package: PG-VSON-4
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
168+2.67 EUR
Mindestbestellmenge: 168
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IPD130N10NF2SATMA1 Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86
IPD130N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.68 EUR
Mindestbestellmenge: 2000
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IPD130N10NF2SATMA1 Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86
IPD130N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 3007 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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IGW30N100TFKSA1 IGW30N100T.pdf
IGW30N100TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+44.57 EUR
Mindestbestellmenge: 10
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CG10148AF
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tray
Memory Format: FRAM
Produkt ist nicht verfügbar
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CG10146AFT
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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AIMDQ75R060M1HXUMA1 Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0
AIMDQ75R060M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+5.17 EUR
Mindestbestellmenge: 750
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AIMDQ75R060M1HXUMA1 Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0
AIMDQ75R060M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.04 EUR
10+8.19 EUR
100+6.33 EUR
Mindestbestellmenge: 2
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AIMDQ75R016M2HXTMA1 Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650
AIMDQ75R016M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R016M2HXTMA1 Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650
AIMDQ75R016M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.98 EUR
10+19.2 EUR
100+18.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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