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ISC031N08NM6ATMA1 ISC031N08NM6ATMA1 Infineon Technologies Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.63 EUR
10+3 EUR
100+2.07 EUR
Mindestbestellmenge: 4
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IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
Produkt ist nicht verfügbar
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IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
auf Bestellung 5515 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.03 EUR
10+3.79 EUR
25+3.47 EUR
100+3.13 EUR
250+2.96 EUR
500+2.87 EUR
1000+2.78 EUR
2500+2.7 EUR
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ISC031N08NM6SCATMA1 ISC031N08NM6SCATMA1 Infineon Technologies Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Produkt ist nicht verfügbar
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IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
1+32.07 EUR
10+22.97 EUR
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CYWB0226ABSX-FDXIT CYWB0226ABSX-FDXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUC120N06S5N015ATMA1 IAUC120N06S5N015ATMA1 Infineon Technologies Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 Infineon Technologies Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 Infineon Technologies Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Produkt ist nicht verfügbar
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ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.66 EUR
10+2.35 EUR
100+1.6 EUR
500+1.28 EUR
1000+1.17 EUR
2000+1.16 EUR
Mindestbestellmenge: 5
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IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
14+1.27 EUR
100+0.84 EUR
500+0.65 EUR
Mindestbestellmenge: 9
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IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
Mindestbestellmenge: 7
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IMLT40R036M2HXTMA1 IMLT40R036M2HXTMA1 Infineon Technologies infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54 Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.52 EUR
10+7.12 EUR
100+5.18 EUR
500+4.36 EUR
1800+4.34 EUR
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IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
Produkt ist nicht verfügbar
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IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+5.87 EUR
Mindestbestellmenge: 1800
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IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
Produkt ist nicht verfügbar
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IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
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IMLT40R011M2HXTMA1 IMLT40R011M2HXTMA1 Infineon Technologies infineon-imlt40r011m2h-datasheet-en.pdf Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
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SHIELDBTS70081EPZTOBO1 SHIELDBTS70081EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
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IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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SHIELD_XENSIV_A SHIELD_XENSIV_A Infineon Technologies Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4 Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
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EVAL2EP130RVDTOBO1 EVAL2EP130RVDTOBO1 Infineon Technologies UG-2024-01_EVAL-2EP130R-VD_v1.00_2024-02-26_en.pdf Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
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EVAL2EP130RPRTOBO1 EVAL2EP130RPRTOBO1 Infineon Technologies UG-2024-02_EVAL-2EP130R-PR_v1.00_2024-02-26_en.pdf Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
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SHIELDXENSIVA SHIELDXENSIVA Infineon Technologies infineon-xensiv-sensor-shield-product-brief-productbrief-en.pdf Description: IOT-PSOC6
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
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DG48VSWITCHKITTOBO1 DG48VSWITCHKITTOBO1 Infineon Technologies Infineon-Dual_Gate_48V_switch_board_quick_introduction-Presentations-v02_20-EN.pdf?fileId=8ac78c8c8d1b852e018d2029a416004e Description: EVAL BOARD FOR IAUTN08S5N012L
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IAUTN08S5N012L
Embedded: No
Produkt ist nicht verfügbar
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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ISC018N08NM6SCATMA1 ISC018N08NM6SCATMA1 Infineon Technologies Infineon-ISC018N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e1d697f01 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
auf Bestellung 3750 Stücke:
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3+6.34 EUR
10+4.81 EUR
25+4.42 EUR
100+4 EUR
250+3.8 EUR
500+3.68 EUR
1000+3.58 EUR
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ISC009N06NM6SCATMA1 ISC009N06NM6SCATMA1 Infineon Technologies Infineon-ISC009N06NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e39af7f07 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1 Infineon Technologies ISC016N08NM8SCATMA1 Description: ISC016N08NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1 Infineon Technologies ISC016N08NM8SCATMA1 Description: ISC016N08NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
Produkt ist nicht verfügbar
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ISC165N15NM6ATMA1 ISC165N15NM6ATMA1 Infineon Technologies DS_ISC165N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 4034 Stücke:
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5+3.54 EUR
10+2.27 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
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IRFZ44ZLPBF IRFZ44ZLPBF Infineon Technologies irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
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50+2.38 EUR
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500+1.74 EUR
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AUIRF1404ZS AUIRF1404ZS Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL AUIRF1404ZSTRL Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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FF650R17IE4PBOSA1 Infineon Technologies Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89 Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
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1+795.38 EUR
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FF6MR12KM1HHPSA1 FF6MR12KM1HHPSA1 Infineon Technologies Infineon-FF6MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a31aa537a2 Description: MOSFET
Packaging: Tray
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IPA70R450P7SXKSA1 IPA70R450P7SXKSA1 Infineon Technologies infineon-ipa70r450p7s-datasheet-en.pdf Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
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IPU95R450P7AKMA1 IPU95R450P7AKMA1 Infineon Technologies infineon-ipu95r450p7-datasheet-en.pdf Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
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525+1.7 EUR
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IRS21084PBF IRS21084PBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21084PBF IRS21084PBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2101PBF IRS2101PBF Infineon Technologies infineon-irs2101-datasheet-en.pdf description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2109PBF IRS2109PBF Infineon Technologies IRSDS11365-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21094PBF IRS21094PBF Infineon Technologies IRSDS11365-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIKYX200N75CP2ALSA1 AIKYX200N75CP2ALSA1 Infineon Technologies Infineon-AIKYX200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190939f601541b9 Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.21 EUR
30+16.19 EUR
120+14 EUR
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AIKYX160N75CP2ALSA1 AIKYX160N75CP2ALSA1 Infineon Technologies Infineon-AIKYX160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a019091d6ff7f6760 Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
auf Bestellung 40 Stücke:
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1+20.82 EUR
30+12.69 EUR
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ISZ023N06LM6ATMA1 ISZ023N06LM6ATMA1 Infineon Technologies infineon-isz023n06lm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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ISZ025N06NM6ATMA1 ISZ025N06NM6ATMA1 Infineon Technologies infineon-isz025n06nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
11+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.16 EUR
2500+1.12 EUR
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ISC025N06LM6ATMA1 ISC025N06LM6ATMA1 Infineon Technologies Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
auf Bestellung 974 Stücke:
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7+2.73 EUR
10+2 EUR
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100+1.62 EUR
250+1.53 EUR
500+1.47 EUR
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IAUC100N08S5N034ATMA1 IAUC100N08S5N034ATMA1 Infineon Technologies Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FM28V020-TGTR FM28V020-TGTR Infineon Technologies Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
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1500+14.82 EUR
Mindestbestellmenge: 1500
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IKWH100N75EH7XKSA1 IKWH100N75EH7XKSA1 Infineon Technologies infineon-ikwh100n75eh7-datasheet-en.pdf Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/237ns
Switching Energy: 3.2mJ (on), 1.8mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.32 EUR
10+8.37 EUR
Mindestbestellmenge: 2
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ISC320N12LM6ATMA1 ISC320N12LM6ATMA1 Infineon Technologies Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Produkt ist nicht verfügbar
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ISC320N12LM6ATMA1 ISC320N12LM6ATMA1 Infineon Technologies Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.11 EUR
14+1.33 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.6 EUR
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CY23FS04ZXC CY23FS04ZXC Infineon Technologies download Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.7MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 3:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.13 EUR
10+5.42 EUR
96+4.54 EUR
192+4.36 EUR
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IR2085STRPBFXUMA1 Infineon Technologies Description: DCDC CONTROLLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ISC031N08NM6ATMA1 Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44
ISC031N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3 EUR
100+2.07 EUR
Mindestbestellmenge: 4
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IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
Produkt ist nicht verfügbar
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IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
auf Bestellung 5515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+3.79 EUR
25+3.47 EUR
100+3.13 EUR
250+2.96 EUR
500+2.87 EUR
1000+2.78 EUR
2500+2.7 EUR
Mindestbestellmenge: 4
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ISC031N08NM6SCATMA1 Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04
ISC031N08NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
Produkt ist nicht verfügbar
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
Produkt ist nicht verfügbar
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.07 EUR
10+22.97 EUR
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CYWB0226ABSX-FDXIT download
CYWB0226ABSX-FDXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUC120N06S5N015ATMA1 Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f
IAUC120N06S5N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N022ATMA1 Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3
IAUC120N06S5N022ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5L015ATMA1 Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4
IAUC120N06S5L015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Produkt ist nicht verfügbar
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.66 EUR
10+2.35 EUR
100+1.6 EUR
500+1.28 EUR
1000+1.17 EUR
2000+1.16 EUR
Mindestbestellmenge: 5
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IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.27 EUR
100+0.84 EUR
500+0.65 EUR
Mindestbestellmenge: 9
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IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
11+1.65 EUR
100+1.11 EUR
500+0.87 EUR
Mindestbestellmenge: 7
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IMLT40R036M2HXTMA1 infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54
IMLT40R036M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.52 EUR
10+7.12 EUR
100+5.18 EUR
500+4.36 EUR
1800+4.34 EUR
Mindestbestellmenge: 2
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IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
Produkt ist nicht verfügbar
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IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+5.87 EUR
Mindestbestellmenge: 1800
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IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
Produkt ist nicht verfügbar
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IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
auf Bestellung 1778 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.85 EUR
10+13.08 EUR
100+10.43 EUR
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IMLT40R011M2HXTMA1 infineon-imlt40r011m2h-datasheet-en.pdf
IMLT40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
Produkt ist nicht verfügbar
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SHIELDBTS70081EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
SHIELDBTS70081EPZTOBO1
Hersteller: Infineon Technologies
Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+150.48 EUR
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IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SHIELD_XENSIV_A Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4
SHIELD_XENSIV_A
Hersteller: Infineon Technologies
Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+103.86 EUR
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EVAL2EP130RVDTOBO1 UG-2024-01_EVAL-2EP130R-VD_v1.00_2024-02-26_en.pdf
EVAL2EP130RVDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+134.08 EUR
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EVAL2EP130RPRTOBO1 UG-2024-02_EVAL-2EP130R-PR_v1.00_2024-02-26_en.pdf
EVAL2EP130RPRTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+144.11 EUR
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SHIELDXENSIVA infineon-xensiv-sensor-shield-product-brief-productbrief-en.pdf
SHIELDXENSIVA
Hersteller: Infineon Technologies
Description: IOT-PSOC6
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
Produkt ist nicht verfügbar
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DG48VSWITCHKITTOBO1 Infineon-Dual_Gate_48V_switch_board_quick_introduction-Presentations-v02_20-EN.pdf?fileId=8ac78c8c8d1b852e018d2029a416004e
DG48VSWITCHKITTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IAUTN08S5N012L
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IAUTN08S5N012L
Embedded: No
Produkt ist nicht verfügbar
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Hersteller: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Produkt ist nicht verfügbar
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Hersteller: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Produkt ist nicht verfügbar
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ISC018N08NM6SCATMA1 Infineon-ISC018N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e1d697f01
ISC018N08NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+4.81 EUR
25+4.42 EUR
100+4 EUR
250+3.8 EUR
500+3.68 EUR
1000+3.58 EUR
Mindestbestellmenge: 3
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ISC009N06NM6SCATMA1 Infineon-ISC009N06NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e39af7f07
ISC009N06NM6SCATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
Produkt ist nicht verfügbar
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC016N08NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
Produkt ist nicht verfügbar
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1
Hersteller: Infineon Technologies
Description: ISC016N08NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
Produkt ist nicht verfügbar
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ISC165N15NM6ATMA1 DS_ISC165N15NM6_en.pdf
ISC165N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 4034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.27 EUR
100+1.55 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 5
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IRFZ44ZLPBF irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c
IRFZ44ZLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
50+2.38 EUR
100+2.15 EUR
500+1.74 EUR
Mindestbestellmenge: 4
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AUIRF1404ZS auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF1404ZSTRL auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FF650R17IE4PBOSA1 Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+795.38 EUR
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FF6MR12KM1HHPSA1 Infineon-FF6MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a31aa537a2
FF6MR12KM1HHPSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tray
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+289.17 EUR
10+269.55 EUR
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IPA70R450P7SXKSA1 infineon-ipa70r450p7s-datasheet-en.pdf
IPA70R450P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
auf Bestellung 31924 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
396+1.13 EUR
Mindestbestellmenge: 396
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IPU95R450P7AKMA1 infineon-ipu95r450p7-datasheet-en.pdf
IPU95R450P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.73 EUR
75+2.21 EUR
150+2 EUR
525+1.7 EUR
1050+1.57 EUR
Mindestbestellmenge: 4
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IRS21084PBF description IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS21084PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 10900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
105+4.25 EUR
Mindestbestellmenge: 105
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IRS21084PBF description IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS21084PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2101PBF description infineon-irs2101-datasheet-en.pdf
IRS2101PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2109PBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
IRS2109PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS21094PBF description IRSDS11365-1.pdf?t.download=true&u=5oefqw
IRS21094PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIKYX200N75CP2ALSA1 Infineon-AIKYX200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190939f601541b9
AIKYX200N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.21 EUR
30+16.19 EUR
120+14 EUR
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AIKYX160N75CP2ALSA1 Infineon-AIKYX160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a019091d6ff7f6760
AIKYX160N75CP2ALSA1
Hersteller: Infineon Technologies
Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.82 EUR
30+12.69 EUR
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ISZ023N06LM6ATMA1 infineon-isz023n06lm6-datasheet-en.pdf
ISZ023N06LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Produkt ist nicht verfügbar
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ISZ025N06NM6ATMA1 infineon-isz025n06nm6-datasheet-en.pdf
ISZ025N06NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
11+1.65 EUR
25+1.5 EUR
100+1.33 EUR
250+1.25 EUR
500+1.2 EUR
1000+1.16 EUR
2500+1.12 EUR
Mindestbestellmenge: 8
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ISC025N06LM6ATMA1 Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf
ISC025N06LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
auf Bestellung 974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2 EUR
25+1.82 EUR
100+1.62 EUR
250+1.53 EUR
500+1.47 EUR
Mindestbestellmenge: 7
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
IAUC100N08S5N034ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FM28V020-TGTR Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V020-TGTR
Hersteller: Infineon Technologies
Description: IC FRAM 256KBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+14.82 EUR
Mindestbestellmenge: 1500
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IKWH100N75EH7XKSA1 infineon-ikwh100n75eh7-datasheet-en.pdf
IKWH100N75EH7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/237ns
Switching Energy: 3.2mJ (on), 1.8mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
auf Bestellung 172 Stücke:
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Anzahl Preis
2+12.32 EUR
10+8.37 EUR
Mindestbestellmenge: 2
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ISC320N12LM6ATMA1 Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152
ISC320N12LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
Produkt ist nicht verfügbar
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ISC320N12LM6ATMA1 Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152
ISC320N12LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.33 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
2000+0.6 EUR
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CY23FS04ZXC download
CY23FS04ZXC
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.7MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 3:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+5.42 EUR
96+4.54 EUR
192+4.36 EUR
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IR2085STRPBFXUMA1
Hersteller: Infineon Technologies
Description: DCDC CONTROLLER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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