Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126465) > Seite 777 nach 2108

Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 772 773 774 775 776 777 778 779 780 781 782 840 1050 1260 1470 1680 1890 2100 2108  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IRF8308MTRPBF IRF8308MTRPBF Infineon Technologies irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61 Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF IR21271PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
127+4.32 EUR
Mindestbestellmenge: 127 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF IR21271PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DEMOFX20MIPI001TOBO1 DEMOFX20MIPI001TOBO1 Infineon Technologies infineon-ez-usb-fx20-demo-board-demo-fx20-mipi-001-usermanual-en.pdf Description: EVAL BOARD FOR CYUSB402X
Packaging: Box
Function: USB
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CYUSB402x
Embedded: Yes, FPGA
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
1+459.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S6J332DJEESE20000 S6J332DJEESE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
Produkt ist nicht verfügbar
 Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDFW80C65D1XKSA1 IDFW80C65D1XKSA1 Infineon Technologies Infineon-IDFW80C65D1-DataSheet-v02_02-EN.pdf?fileId=5546d46274cf54d50174da579c702296 Description: DIODE ARR GP 650V 74A TO247-3-AI
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 73 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 74A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
93+5.93 EUR
Mindestbestellmenge: 93 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSE846GPS2DBZC4XQSA1 PSE846GPS2DBZC4XQSA1 Infineon Technologies infineon-psoc-edge-e8x-consumer-datasheet-datasheet-en.pdf Description: IOT-EDGE
Packaging: Tray
Package / Case: 220-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz, 400MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 5M x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: NVSRAM
Core Processor: ARM® Cortex®-M55, ARM® Ethos-U55
Data Converters: A/D 17x20b SAR; D/A 2x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: AES, Brown-out Detect/Reset, DMA, I2S, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 220-FBGA (10x10)
Number of I/O: 147
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.34 EUR
10+19.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE9261BQXXUMA2 TLE9261BQXXUMA2 Infineon Technologies Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.26 EUR
10+4.71 EUR
25+4.33 EUR
100+3.9 EUR
250+3.7 EUR
500+3.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N038TATMA1 IAUTN15S6N038TATMA1 Infineon Technologies Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N038TATMA1 IAUTN15S6N038TATMA1 Infineon Technologies Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1690 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.51 EUR
10+9.65 EUR
25+8.92 EUR
100+8.14 EUR
250+7.77 EUR
500+7.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N025TATMA1 IAUTN15S6N025TATMA1 Infineon Technologies Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802 Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N025TATMA1 IAUTN15S6N025TATMA1 Infineon Technologies Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802 Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.36 EUR
10+12.71 EUR
25+11.79 EUR
100+10.79 EUR
250+10.32 EUR
500+10.03 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1010EZS AUIRF1010EZS Infineon Technologies IRSDS10898-1.pdf?t.download=true&u=5oefqw Description: AUIRF1010 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
34+16.15 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4147LQEHVS136XXQLA1 CY8C4147LQEHVS136XXQLA1 Infineon Technologies Infineon-CY8C41x7_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c956a0a470195817786015ddd Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.6V ~ 28V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 32-QFN (6x6)
Grade: Automotive
Number of I/O: 49
Qualification: AEC-Q100
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.68 EUR
10+15.39 EUR
25+14.32 EUR
100+13.14 EUR
260+12.55 EUR
520+12.21 EUR
1040+11.94 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMZA75R060M2HXKSA1 IMZA75R060M2HXKSA1 Infineon Technologies IMZA75R060M2HXKSA1.pdf Description: IMZA75R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.39 EUR
30+10.17 EUR
60+9.32 EUR
120+8.59 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS0650302LMRXUSA1 GS0650302LMRXUSA1 Infineon Technologies Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149 Description: GS-065-030-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
250+10.08 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS0650302LMRXUSA1 GS0650302LMRXUSA1 Infineon Technologies Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149 Description: GS-065-030-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.36 EUR
10+14.78 EUR
50+11.96 EUR
100+11.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC300N20NM6ATMA1 ISC300N20NM6ATMA1 Infineon Technologies infineon-isc300n20nm6-datasheet-en.pdf Description: ISC300N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC300N20NM6ATMA1 ISC300N20NM6ATMA1 Infineon Technologies infineon-isc300n20nm6-datasheet-en.pdf Description: ISC300N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 4326 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.25 EUR
10+4.71 EUR
100+3.27 EUR
500+2.65 EUR
1000+2.45 EUR
2000+2.28 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4868PBFAKMA1 Infineon Technologies Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.54 EUR
25+9.23 EUR
100+7.74 EUR
500+6.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4147LQS-S295 CY8C4147LQS-S295 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.43 EUR
10+11.15 EUR
25+10.34 EUR
100+9.44 EUR
260+8.98 EUR
520+8.73 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRGSL4062D1 AUIRGSL4062D1 Infineon Technologies AUIRGB4062D1.pdf?t.download=true&u=ovmfp3 Description: IGBT
Packaging: Bulk
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
72+7.68 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CYRF9935-24LQXC CYRF9935-24LQXC Infineon Technologies 5047 Description: IC RF TXRX ISM>1GHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Current - Receiving: 14mA ~ 15mA
Data Rate (Max): 2Mbps
Current - Transmitting: 6.3mA ~ 15mA
Supplier Device Package: 24-QFN (4x4)
Modulation: GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYRF89535-68LTXC CYRF89535-68LTXC Infineon Technologies CYRF89535-68LTXC_Web.pdf Description: IC RF TXRX 2.4GHZ 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: 68-QFN (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYRF69213-40LTXC CYRF69213-40LTXC Infineon Technologies CYRF69213_April2013.pdf Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Power - Output: 4dBm
Current - Receiving: 23.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 36.6mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYRF69313-40LTXC CYRF69313-40LTXC Infineon Technologies CYRF69313_Mar2014.pdf Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C22213-24LFI CY8C22213-24LFI Infineon Technologies CY8C22113%2C%2022213.pdf Description: IC MCU 8BIT 2KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 16
DigiKey Programmable: Not Verified
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.97 EUR
10+5.26 EUR
25+4.83 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S28HS256TGZBHB813 S28HS256TGZBHB813 Infineon Technologies infineon-s28hs256t-s28hl256t-256mb-semper-flash-octal-interface-1-8v-3-datasheet-en.pdf Description: S28HS256TGZBHB813
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 32M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3303TRPBF IRFR3303TRPBF Infineon Technologies irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMY120R036AM2HXKSA1 IMY120R036AM2HXKSA1 Infineon Technologies infineon-imy120r036am2h-datasheet-en.pdf Description: IMY120R036AM2HXKSA1
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18.2A, 18V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.7mA
Supplier Device Package: PG-TO247-4-19
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 800 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.03 EUR
30+14.46 EUR
120+12.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGLT65R110B2AUMA1 IGLT65R110B2AUMA1 Infineon Technologies infineon-iglt65r110b2-datasheet-en.pdf Description: GANFET N-CH 650V 14A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IGLT65R110B2AUMA1 IGLT65R110B2AUMA1 Infineon Technologies infineon-iglt65r110b2-datasheet-en.pdf Description: GANFET N-CH 650V 14A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
auf Bestellung 1478 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.48 EUR
10+10.51 EUR
50+8.39 EUR
100+7.7 EUR
500+7.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104S AUIRF4104S Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104STRL AUIRF4104STRL Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7379QTR AUIRF7379QTR Infineon Technologies auirf7379q.pdf?fileId=5546d462533600a4015355ad4d7713e2 Description: MOSFET N/P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS200R07N3E4RB11BOSA1 FS200R07N3E4RB11BOSA1 Infineon Technologies Infineon-FS200R07N3E4R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f496103d258b8 Description: IGBT MOD 650V 200A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+207.18 EUR
10+163.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
F3L500R12N3H7B66BPSA1 F3L500R12N3H7B66BPSA1 Infineon Technologies F3L500R12N3H7B66BPSA1.pdf Description: IGBT MODULE 1200V 510A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 57.9 nF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
1+385.35 EUR
10+339.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
F3L500R12N3H7FB66BPSA1 F3L500R12N3H7FB66BPSA1 Infineon Technologies F3L500R12N3H7B66BPSA1.pdf Description: IGBT MODULE 1200V 510A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 57.9 nF @ 25 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
1+576.79 EUR
10+477.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMDQ65R010M2HXUMA1 IMDQ65R010M2HXUMA1 Infineon Technologies Infineon-IMDQ65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934daa3f053a3b Description: IMDQ65R010M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 651W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4002 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMDQ65R010M2HXUMA1 IMDQ65R010M2HXUMA1 Infineon Technologies Infineon-IMDQ65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934daa3f053a3b Description: IMDQ65R010M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 651W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4002 pF @ 400 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.36 EUR
10+35.44 EUR
25+33.21 EUR
100+30.76 EUR
250+29.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
REF15KW2LBOOSTTOBO1 REF15KW2LBOOSTTOBO1 Infineon Technologies infineon-ref-15kw2lboost-usermanual-en.pdf Description: 15KW BOOST CONVERTER EVAL BRD
Packaging: Box
Voltage - Output: 800V
Voltage - Input: 400V
Contents: Board(s)
Frequency - Switching: 24kHz
Regulator Topology: Boost
Main Purpose: DC/DC, Step Up
Power - Output: 15kW
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+2928.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
REF9KW2LBOOSTTOBO1 REF9KW2LBOOSTTOBO1 Infineon Technologies infineon-ref-9kw2lboost-usermanual-en.pdf Description: REF_9KW2LBOOST
Packaging: Box
Voltage - Output: 318V ~ 515V
Voltage - Input: 350V ~ 400V
Contents: Board(s)
Frequency - Switching: 24kHz
Regulator Topology: Boost
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Isolated Output
Power - Output: 9kW
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+3079.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL7DAAQ0AZEGSXQLA1 Infineon Technologies Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S26HS02GTFPBHB043 S26HS02GTFPBHB043 Infineon Technologies Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e Description: IC FLASH 2GBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: HyperBus
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0032AAXUMA1 XMC1401F048X0032AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-en.pdf Description: XMC1401F048X0032AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0064AAXUMA1 XMC1401F048X0064AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-cn.pdf Description: XMC1401F048X0064AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0032AAXUMA1 XMC1402F048X0032AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-cn.pdf Description: XMC1402F048X0032AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0128AAXUMA1 XMC1401F048X0128AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-en.pdf Description: XMC1401F048X0128AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0064AAXUMA1 XMC1402F048X0064AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-en.pdf Description: XMC1402F048X0064AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0200AAXUMA1 XMC1401F048X0200AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-en.pdf Description: XMC1401F048X0200AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0128AAXUMA1 XMC1402F048X0128AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-en.pdf Description: XMC1402F048X0128AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404F048X0064AAXUMA1 XMC1404F048X0064AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-en.pdf Description: XMC1404F048X0064AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0200AAXUMA1 XMC1402F048X0200AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-cn.pdf Description: XMC1402F048X0200AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404F048X0128AAXUMA1 XMC1404F048X0128AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-en.pdf Description: XMC1404F048X0128AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404F048X0200AAXUMA1 XMC1404F048X0200AAXUMA1 Infineon Technologies infineon-xmc1400-datasheet-cn.pdf Description: XMC1404F048X0200AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFS3607TRL AUIRFS3607TRL Infineon Technologies auirfs3607.pdf?fileId=5546d462533600a4015355b6990a14bf Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4 Description: MOSFET N-CH 120V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.66 EUR
3000+4.5 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 IPB038N12N3GATMA1 Infineon Technologies IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4 Description: MOSFET N-CH 120V 120A D2PAK
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 39254 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.38 EUR
10+8.29 EUR
50+6.53 EUR
100+5.97 EUR
500+5.19 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFR193FH6327XTSA1 BFR193FH6327XTSA1 Infineon Technologies bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
Supplier Device Package: PG-TSFP-3
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFR193FH6327XTSA1 BFR193FH6327XTSA1 Infineon Technologies bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TSFP-3
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
54+0.39 EUR
60+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRF8308MTRPBF irf8308mpbf.pdf?fileId=5546d462533600a40153560d319d1d61
IRF8308MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF description ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 8455 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
127+4.32 EUR
Mindestbestellmenge: 127 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IR21271PBF description ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DEMOFX20MIPI001TOBO1 infineon-ez-usb-fx20-demo-board-demo-fx20-mipi-001-usermanual-en.pdf
DEMOFX20MIPI001TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR CYUSB402X
Packaging: Box
Function: USB
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: CYUSB402x
Embedded: Yes, FPGA
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+459.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S6J332DJEESE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
S6J332DJEESE20000
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 3.0625MB (3.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-TEQFP (24x24)
Number of I/O: 150
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDFW80C65D1XKSA1 Infineon-IDFW80C65D1-DataSheet-v02_02-EN.pdf?fileId=5546d46274cf54d50174da579c702296
IDFW80C65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR GP 650V 74A TO247-3-AI
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 73 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 74A
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 40 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
93+5.93 EUR
Mindestbestellmenge: 93 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSE846GPS2DBZC4XQSA1 infineon-psoc-edge-e8x-consumer-datasheet-datasheet-en.pdf
PSE846GPS2DBZC4XQSA1
Hersteller: Infineon Technologies
Description: IOT-EDGE
Packaging: Tray
Package / Case: 220-TFBGA
Mounting Type: Surface Mount
Speed: 200MHz, 400MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 5M x 8
Operating Temperature: -20°C ~ 70°C (TA)
Oscillator Type: External, Internal
Program Memory Type: NVSRAM
Core Processor: ARM® Cortex®-M55, ARM® Ethos-U55
Data Converters: A/D 17x20b SAR; D/A 2x12b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, Ethernet, I2C, SPI, UART/USART, USB
Peripherals: AES, Brown-out Detect/Reset, DMA, I2S, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 220-FBGA (10x10)
Number of I/O: 147
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.34 EUR
10+19.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TLE9261BQXXUMA2 Infineon-TLE9261BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1554f5b04
TLE9261BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.26 EUR
10+4.71 EUR
25+4.33 EUR
100+3.9 EUR
250+3.7 EUR
500+3.65 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N038TATMA1 Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125
IAUTN15S6N038TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N038TATMA1 Infineon-IAUTN15S6N038T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196fdc7cc9b7125
IAUTN15S6N038TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 85A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 166µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1690 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.51 EUR
10+9.65 EUR
25+8.92 EUR
100+8.14 EUR
250+7.77 EUR
500+7.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N025TATMA1 Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802
IAUTN15S6N025TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUTN15S6N025TATMA1 Infineon-IAUTN15S6N025T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e0197399048cf5802
IAUTN15S6N025TATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.36 EUR
10+12.71 EUR
25+11.79 EUR
100+10.79 EUR
250+10.32 EUR
500+10.03 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF1010EZS IRSDS10898-1.pdf?t.download=true&u=5oefqw
AUIRF1010EZS
Hersteller: Infineon Technologies
Description: AUIRF1010 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+16.15 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4147LQEHVS136XXQLA1 Infineon-CY8C41x7_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c956a0a470195817786015ddd
CY8C4147LQEHVS136XXQLA1
Hersteller: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.6V ~ 28V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 32-QFN (6x6)
Grade: Automotive
Number of I/O: 49
Qualification: AEC-Q100
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.68 EUR
10+15.39 EUR
25+14.32 EUR
100+13.14 EUR
260+12.55 EUR
520+12.21 EUR
1040+11.94 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMZA75R060M2HXKSA1 IMZA75R060M2HXKSA1.pdf
IMZA75R060M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA75R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 13.8A, 20V
Power Dissipation (Max): 108W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 716 pF @ 500 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.39 EUR
30+10.17 EUR
60+9.32 EUR
120+8.59 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS0650302LMRXUSA1 Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149
GS0650302LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+10.08 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS0650302LMRXUSA1 Infineon-GS-065-030-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5160754f5149
GS0650302LMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+21.36 EUR
10+14.78 EUR
50+11.96 EUR
100+11.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
ISC300N20NM6ATMA1 infineon-isc300n20nm6-datasheet-en.pdf
ISC300N20NM6ATMA1
Hersteller: Infineon Technologies
Description: ISC300N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
ISC300N20NM6ATMA1 infineon-isc300n20nm6-datasheet-en.pdf
ISC300N20NM6ATMA1
Hersteller: Infineon Technologies
Description: ISC300N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 24A, 15V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 56µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
auf Bestellung 4326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.25 EUR
10+4.71 EUR
100+3.27 EUR
500+2.65 EUR
1000+2.45 EUR
2000+2.28 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4868PBFAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PG-TO247-3-901
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.54 EUR
25+9.23 EUR
100+7.74 EUR
500+6.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CY8C4147LQS-S295 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S295
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.43 EUR
10+11.15 EUR
25+10.34 EUR
100+9.44 EUR
260+8.98 EUR
520+8.73 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRGSL4062D1 AUIRGB4062D1.pdf?t.download=true&u=ovmfp3
AUIRGSL4062D1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+7.68 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CYRF9935-24LQXC 5047
CYRF9935-24LQXC
Hersteller: Infineon Technologies
Description: IC RF TXRX ISM>1GHZ 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Sensitivity: -93dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Current - Receiving: 14mA ~ 15mA
Data Rate (Max): 2Mbps
Current - Transmitting: 6.3mA ~ 15mA
Supplier Device Package: 24-QFN (4x4)
Modulation: GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYRF89535-68LTXC CYRF89535-68LTXC_Web.pdf
CYRF89535-68LTXC
Hersteller: Infineon Technologies
Description: IC RF TXRX 2.4GHZ 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: 68-QFN (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYRF69213-40LTXC CYRF69213_April2013.pdf
CYRF69213-40LTXC
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Power - Output: 4dBm
Current - Receiving: 23.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 36.6mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYRF69313-40LTXC CYRF69313_Mar2014.pdf
CYRF69313-40LTXC
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 8kB Flash, 256B SRAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Power - Output: 0dBm
Current - Receiving: 20.2mA ~ 23.4mA
Data Rate (Max): 1.5Mbps
Current - Transmitting: 22.4mA ~ 27.7mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 14
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY8C22213-24LFI CY8C22113%2C%2022213.pdf
CY8C22213-24LFI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 2KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 2KB (2K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 2x14b; D/A 1x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 16
DigiKey Programmable: Not Verified
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.97 EUR
10+5.26 EUR
25+4.83 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S28HS256TGZBHB813 infineon-s28hs256t-s28hl256t-256mb-semper-flash-octal-interface-1-8v-3-datasheet-en.pdf
S28HS256TGZBHB813
Hersteller: Infineon Technologies
Description: S28HS256TGZBHB813
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Octal I/O
Access Time: 5.45 ns
Memory Organization: 32M x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3303TRPBF irfr3303pbf.pdf?fileId=5546d462533600a401535630f56c208d
IRFR3303TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMY120R036AM2HXKSA1 infineon-imy120r036am2h-datasheet-en.pdf
IMY120R036AM2HXKSA1
Hersteller: Infineon Technologies
Description: IMY120R036AM2HXKSA1
Packaging: Tray
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18.2A, 18V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.7mA
Supplier Device Package: PG-TO247-4-19
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 800 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.03 EUR
30+14.46 EUR
120+12.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGLT65R110B2AUMA1 infineon-iglt65r110b2-datasheet-en.pdf
IGLT65R110B2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 14A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IGLT65R110B2AUMA1 infineon-iglt65r110b2-datasheet-en.pdf
IGLT65R110B2AUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 14A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4.5A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.36mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.52 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 149 pF @ 400 V
auf Bestellung 1478 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.48 EUR
10+10.51 EUR
50+8.39 EUR
100+7.7 EUR
500+7.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104S IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4104STRL IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7379QTR auirf7379q.pdf?fileId=5546d462533600a4015355ad4d7713e2
AUIRF7379QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 5.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS200R07N3E4RB11BOSA1 Infineon-FS200R07N3E4R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f496103d258b8
FS200R07N3E4RB11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 200A 600W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+207.18 EUR
10+163.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
F3L500R12N3H7B66BPSA1 F3L500R12N3H7B66BPSA1.pdf
F3L500R12N3H7B66BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 510A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 57.9 nF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+385.35 EUR
10+339.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
F3L500R12N3H7FB66BPSA1 F3L500R12N3H7B66BPSA1.pdf
F3L500R12N3H7FB66BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 510A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 57.9 nF @ 25 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+576.79 EUR
10+477.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMDQ65R010M2HXUMA1 Infineon-IMDQ65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934daa3f053a3b
IMDQ65R010M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R010M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 651W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4002 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IMDQ65R010M2HXUMA1 Infineon-IMDQ65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934daa3f053a3b
IMDQ65R010M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R010M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 651W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4002 pF @ 400 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+44.36 EUR
10+35.44 EUR
25+33.21 EUR
100+30.76 EUR
250+29.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
REF15KW2LBOOSTTOBO1 infineon-ref-15kw2lboost-usermanual-en.pdf
REF15KW2LBOOSTTOBO1
Hersteller: Infineon Technologies
Description: 15KW BOOST CONVERTER EVAL BRD
Packaging: Box
Voltage - Output: 800V
Voltage - Input: 400V
Contents: Board(s)
Frequency - Switching: 24kHz
Regulator Topology: Boost
Main Purpose: DC/DC, Step Up
Power - Output: 15kW
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+2928.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
REF9KW2LBOOSTTOBO1 infineon-ref-9kw2lboost-usermanual-en.pdf
REF9KW2LBOOSTTOBO1
Hersteller: Infineon Technologies
Description: REF_9KW2LBOOST
Packaging: Box
Voltage - Output: 318V ~ 515V
Voltage - Input: 350V ~ 400V
Contents: Board(s)
Frequency - Switching: 24kHz
Regulator Topology: Boost
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Isolated Output
Power - Output: 9kW
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3079.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL7DAAQ0AZEGSXQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S26HS02GTFPBHB043 Infineon-S26HS02GT_S26HS04GT_S26HL02GT_S26HL04GT_2Gb_4Gb_SEMPER_Flash_HYPERBUS_interface_1.8V_3.0V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7f2a768a017f52f1bcc82c6e
S26HS02GTFPBHB043
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: HyperBus
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0032AAXUMA1 infineon-xmc1400-datasheet-en.pdf
XMC1401F048X0032AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1401F048X0032AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0064AAXUMA1 infineon-xmc1400-datasheet-cn.pdf
XMC1401F048X0064AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1401F048X0064AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0032AAXUMA1 infineon-xmc1400-datasheet-cn.pdf
XMC1402F048X0032AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1402F048X0032AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0128AAXUMA1 infineon-xmc1400-datasheet-en.pdf
XMC1401F048X0128AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1401F048X0128AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0064AAXUMA1 infineon-xmc1400-datasheet-en.pdf
XMC1402F048X0064AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1402F048X0064AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1401F048X0200AAXUMA1 infineon-xmc1400-datasheet-en.pdf
XMC1401F048X0200AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1401F048X0200AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0128AAXUMA1 infineon-xmc1400-datasheet-en.pdf
XMC1402F048X0128AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1402F048X0128AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404F048X0064AAXUMA1 infineon-xmc1400-datasheet-en.pdf
XMC1404F048X0064AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1404F048X0064AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1402F048X0200AAXUMA1 infineon-xmc1400-datasheet-cn.pdf
XMC1402F048X0200AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1402F048X0200AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404F048X0128AAXUMA1 infineon-xmc1400-datasheet-en.pdf
XMC1404F048X0128AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1404F048X0128AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
XMC1404F048X0200AAXUMA1 infineon-xmc1400-datasheet-cn.pdf
XMC1404F048X0200AAXUMA1
Hersteller: Infineon Technologies
Description: XMC1404F048X0200AAXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-48-10
Number of I/O: 35
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFS3607TRL auirfs3607.pdf?fileId=5546d462533600a4015355b6990a14bf
AUIRFS3607TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4
IPB038N12N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 120A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.66 EUR
3000+4.5 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB038N12N3GATMA1 IPP_I_B041N12N3_Rev2.2.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a75b86467ca4
IPB038N12N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 120A D2PAK
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 211 nC @ 10 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 39254 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.38 EUR
10+8.29 EUR
50+6.53 EUR
100+5.97 EUR
500+5.19 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFR193FH6327XTSA1 bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c
BFR193FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
Supplier Device Package: PG-TSFP-3
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BFR193FH6327XTSA1 bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c
BFR193FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 80mA
Power - Max: 580mW
Gain: 12.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Supplier Device Package: PG-TSFP-3
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 8GHz
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
54+0.39 EUR
60+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 420 630 772 773 774 775 776 777 778 779 780 781 782 840 1050 1260 1470 1680 1890 2100 2108  [ Nächste Seite >> ]