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KITXMC52EVKTOBO1 KITXMC52EVKTOBO1 Infineon Technologies infineon-kit-xmc52-evk-ug-usermanual-en.pdf Description: KITXMC52EVKTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC52
Produkt ist nicht verfügbar
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AUIRLZ44ZL AUIRLZ44ZL Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
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AIGBG25N120S7ATMA1 AIGBG25N120S7ATMA1 Infineon Technologies AIGBG25N120S7ATMA1.pdf Description: AIGBG25N120S7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
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AIGBG25N120S7ATMA1 AIGBG25N120S7ATMA1 Infineon Technologies AIGBG25N120S7ATMA1.pdf Description: AIGBG25N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
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IRF6802SDTRPBF IRF6802SDTRPBF Infineon Technologies IRSDS18838-1.pdf?t.download=true&u=5oefqw Description: IRF6802 - 12V-300V N-CHANNEL POW
Packaging: Bulk
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IRF6802SDTRPBF Infineon Technologies IRF6802SD%28TR%29PBF.pdf Description: MOSFET 2N-CH 25V 16A DIRECTFETSA
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: DIRECTFET™ SA
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CY8C4147LDAS283XQLA1 CY8C4147LDAS283XQLA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4147LDAS283TXUMA1 CY8C4147LDAS283TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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IR3725MTRPBF IR3725MTRPBF Infineon Technologies IR3725.pdf Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
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IR3725MTRPBF IR3725MTRPBF Infineon Technologies IR3725.pdf Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
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DZ3600S17K3B2NOSA1 DZ3600S17K3B2NOSA1 Infineon Technologies Infineon-DZ3600S17K3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc5914d74 Description: DIODE MODULE GP 1700V AIHM190-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: A-IHM190-1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 3600 A
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S29GL01GS12TFIV20 S29GL01GS12TFIV20 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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CY8C4146LWEHVS115XXQLA1 CY8C4146LWEHVS115XXQLA1 Infineon Technologies Infineon-CY8C41x5_CY8C41x6_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c956a0a470195810936765c93 Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 56-WQFN (8x8)
Grade: Automotive
Number of I/O: 41
Qualification: AEC-Q100
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CY7C4221-15AXC CY7C4221-15AXC Infineon Technologies CY7C4201%2C11%2C21%2C31%2C41%2C51_4421_RevD.pdf Description: IC FIFO SYNC 1KX9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (1K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
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AUIRFR3504 AUIRFR3504 Infineon Technologies AUIRFR3504.pdf Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
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TLE9350BXSJXTMA1 TLE9350BXSJXTMA1 Infineon Technologies Infineon-TLE9350BXSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e298bb08e1 Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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TLE9350BXSJXTMA1 TLE9350BXSJXTMA1 Infineon Technologies Infineon-TLE9350BXSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e298bb08e1 Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
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CY9AF341LAPMC1-G-JNE2 CY9AF341LAPMC1-G-JNE2 Infineon Technologies infineon-cy9a340nb-fm3-mcu-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-datasheet&redirId= Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
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KITFX20FMC001TOBO1 KITFX20FMC001TOBO1 Infineon Technologies Infineon-Development_board_KIT_FX20_FMC_001-UserManual-v04_00-EN.pdf?fileId=8ac78c8c95d1335f0195d225839d0151 Description: EZ-USB FX20 DEV KIT
Packaging: Box
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: FX20
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TLD55421IVREGEVALTOBO1 TLD55421IVREGEVALTOBO1 Infineon Technologies Infineon-TLD5542-1IVREG-EVAL-UserManual-v01_00-EN.pdf?fileId=5546d4627294a88f01729a21d04448d7 Description: EVAL BOARD FOR TLD5542-1
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2V ~ 51V
Voltage - Input: 5.5V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5542-1
Outputs and Type: 1 Non-Isolated Output
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TLD5191IVREGEVALTOBO1 TLD5191IVREGEVALTOBO1 Infineon Technologies Infineon-Infineon-TLD5191IVREG-EVAL-UM-v01_00-EN-UserManual-v02_00-EN.pdf?fileId=8ac78c8c80f4d3290181614c6dd24197 Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2.15V ~ 41.8V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
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TLD5191HB2WEVALTOBO1 TLD5191HB2WEVALTOBO1 Infineon Technologies Infineon-Infineon-Z8F80286003-TLD5191HB2W_EVAL-UG-v01_00-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c80f4d32901815c017da76703 Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 6.2V ~ 23.6V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
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CY8CTMG200-24LQXI CY8CTMG200-24LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN
Number of I/O: 20
DigiKey Programmable: Not Verified
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CY8CTMG200-32LQXI CY8CTMG200-32LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 32K FLASH 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8CTMG201-32LQXI CY8CTMG201-32LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8CTMG200-48LTXI CY8CTMG200-48LTXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 32K FLASH 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
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IPG20N06S4L26AATMA1 IPG20N06S4L26AATMA1 Infineon Technologies Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
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CYTVII-B-E-BB CYTVII-B-E-BB Infineon Technologies Infineon-AUTOMOTIVE_BODY_MCU_BASE_BOARD_CYTVII-B-E-BB_QUICK_START_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0345c21aa2 Description: CYTVII-B-E-BB
Packaging: Tray
Function: CAN, CXPI, FlexRay, LIN
Type: Interface
Contents: Board(s)
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IRF9335TRPBF IRF9335TRPBF Infineon Technologies irf9335pbf.pdf?fileId=5546d462533600a40153561147881da3 Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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IRF9393TRPBFXTMA1 IRF9393TRPBFXTMA1 Infineon Technologies infineon-irf9393-datasheet-en.pdf Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
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F475R17N3E7B58BPSA1 F475R17N3E7B58BPSA1 Infineon Technologies 448_F475R17N3E7B58.pdf Description: F475R17N3E7B58BPSA1
Packaging: Tray
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TLE49761KHTSA1 TLE49761KHTSA1 Infineon Technologies TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7 Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
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TLE49761KHTSA1 TLE49761KHTSA1 Infineon Technologies TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7 Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
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28+0.76 EUR
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500+0.6 EUR
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ITS4035SEPDXUMA1 ITS4035SEPDXUMA1 Infineon Technologies Infineon-ITS4035S-EP-D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bd900d8c44e83 Description: PROFET
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
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ITS4035SEPDXUMA1 ITS4035SEPDXUMA1 Infineon Technologies Infineon-ITS4035S-EP-D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bd900d8c44e83 Description: PROFET
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
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250+2.81 EUR
500+2.71 EUR
1000+2.63 EUR
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CYT2B98DACQ0AZEGSHQLA1 Infineon Technologies Description: IC MCU
Packaging: Tray
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CYT2B98DACQ0AZEGSTHUYA1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
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CYW4373EUBGT CYW4373EUBGT Infineon Technologies InfineonCYW4373DataSheetv0800EN.pdf Description: IC RF TXRX+MCU BLE 128WLBGA
Packaging: Cut Tape (CT)
Package / Case: 128-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 128-WLBGA (4.51x5.43)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
DigiKey Programmable: Not Verified
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2+18.66 EUR
10+16.18 EUR
25+15.33 EUR
100+14.16 EUR
250+13.46 EUR
500+12.96 EUR
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CYW20705B0KWFBGT CYW20705B0KWFBGT Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20713A1KUBXGT CYW20713A1KUBXGT Infineon Technologies download Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20713A1KUBXGT CYW20713A1KUBXGT Infineon Technologies download Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Cut Tape (CT)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
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3+7.71 EUR
10+6.66 EUR
25+6.3 EUR
100+5.8 EUR
250+5.49 EUR
500+5.27 EUR
1000+5.08 EUR
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BCM20702B0KWFBGT BCM20702B0KWFBGT Infineon Technologies Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG8P15N120KDPBF IRG8P15N120KDPBF Infineon Technologies IRG8P15N120KD%28-E%29PbF.pdf Description: IGBT 1200V 30A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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TLS820F3ELV33BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS820F3
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS820F3
Channels per IC: 1 - Single
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TLS810B1EJV33BOARDTOBO1 TLS810B1EJV33BOARDTOBO1 Infineon Technologies Infineon-Z8F56638910-TLS8xxx1xJ-Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a424127c2725b Description: EVAL BOARD FOR TLS810B1EJV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810B1EJV33
Channels per IC: 1 - Single
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REF3K3W3LFCPSUTOBO1 REF3K3W3LFCPSUTOBO1 Infineon Technologies infineon-reference-design-ref-3k3w-3lfc-psu-applicationnotes-en.pdf Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Box
Voltage - Output: 50V
Voltage - Input: 180 ~ 265 VAC
Current - Output: 66A
Contents: Board(s)
Utilized IC / Part: TLS4120D0EPV33
Main Purpose: AC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 3.3kW
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FZ825R33HE4DBPSA1 FZ825R33HE4DBPSA1 Infineon Technologies Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584 Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
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IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 Infineon Technologies Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
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IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 Infineon Technologies Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
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IQEH46NE2LM7ZCGSCATMA1 IQEH46NE2LM7ZCGSCATMA1 Infineon Technologies infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
Produkt ist nicht verfügbar
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IQEH46NE2LM7ZCGSCATMA1 IQEH46NE2LM7ZCGSCATMA1 Infineon Technologies infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
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ISCH69N04NM7VATMA1 ISCH69N04NM7VATMA1 Infineon Technologies infineon-isch69n04nm7v-datasheet-en.pdf Description: ISCH69N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
Produkt ist nicht verfügbar
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ISCH69N04NM7VATMA1 ISCH69N04NM7VATMA1 Infineon Technologies infineon-isch69n04nm7v-datasheet-en.pdf Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
auf Bestellung 4006 Stücke:
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500+1.99 EUR
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IDWD150G120C5XKSA1 IDWD150G120C5XKSA1 Infineon Technologies Infineon-IDWD150G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473546a51abd Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8485pF @ 1V, 100kHz
Current - Average Rectified (Io): 343A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV
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IQFH99N06NM5ATMA1 IQFH99N06NM5ATMA1 Infineon Technologies Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IQFH99N06NM5ATMA1 IQFH99N06NM5ATMA1 Infineon Technologies Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
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IQFH86N06NM5ATMA1 IQFH86N06NM5ATMA1 Infineon Technologies Infineon-IQFH86N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e600b08076f Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 394A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 176µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 30 V
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IDWD50G120C5XKSA1 IDWD50G120C5XKSA1 Infineon Technologies Infineon-IDWD50G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473528d41ab4 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2890pF @ 1V, 100kHz
Current - Average Rectified (Io): 131A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV
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IDWD60G120C5XKSA1 IDWD60G120C5XKSA1 Infineon Technologies Infineon-IDWD60G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01954735328f1ab7 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
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CY8C4148AZQ-S445 CY8C4148AZQ-S445 Infineon Technologies infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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KITXMC52EVKTOBO1 infineon-kit-xmc52-evk-ug-usermanual-en.pdf
KITXMC52EVKTOBO1
Hersteller: Infineon Technologies
Description: KITXMC52EVKTOBO1
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC52
Produkt ist nicht verfügbar
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AUIRLZ44ZL fundamentals-of-power-semiconductors
AUIRLZ44ZL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIGBG25N120S7ATMA1 AIGBG25N120S7ATMA1.pdf
AIGBG25N120S7ATMA1
Hersteller: Infineon Technologies
Description: AIGBG25N120S7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
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AnzahlPrivatkunde
1000+3.06 EUR
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AIGBG25N120S7ATMA1 AIGBG25N120S7ATMA1.pdf
AIGBG25N120S7ATMA1
Hersteller: Infineon Technologies
Description: AIGBG25N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12.9ns/120ns
Switching Energy: 200µJ (on), 1.47mJ (off)
Test Condition: 800V, 25A, 4.5Ohm, 15V
Gate Charge: 158 nC
Grade: Automotive
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 250 W
Qualification: AEC-Q101
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3+8.54 EUR
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IRF6802SDTRPBF IRSDS18838-1.pdf?t.download=true&u=5oefqw
IRF6802SDTRPBF
Hersteller: Infineon Technologies
Description: IRF6802 - 12V-300V N-CHANNEL POW
Packaging: Bulk
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IRF6802SDTRPBF IRF6802SD%28TR%29PBF.pdf
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 16A DIRECTFETSA
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 13V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Supplier Device Package: DIRECTFET™ SA
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CY8C4147LDAS283XQLA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4147LDAS283XQLA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147LDAS283TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4147LDAS283TXUMA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IR3725MTRPBF IR3725.pdf
IR3725MTRPBF
Hersteller: Infineon Technologies
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR3725MTRPBF IR3725.pdf
IR3725MTRPBF
Hersteller: Infineon Technologies
Description: IC PWR MONITOR INPUT 12-DFN
Packaging: Bulk
Package / Case: 12-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 3.135V ~ 3.465V
Applications: Power Supply Monitor
Supplier Device Package: 12-DFN (4x3)
Current - Supply: 700 µA
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
157+3.4 EUR
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DZ3600S17K3B2NOSA1 Infineon-DZ3600S17K3_B2-DS-v02_02-en_de.pdf?fileId=db3a304412b407950112b42fc5914d74
DZ3600S17K3B2NOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1700V AIHM190-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: A-IHM190-1
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 3600 A
Produkt ist nicht verfügbar
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S29GL01GS12TFIV20 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS12TFIV20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4146LWEHVS115XXQLA1 Infineon-CY8C41x5_CY8C41x6_PSOC_4_high_voltage_HV_mixed_signal_MS_Automotive_MCU_Based_on_32-bit_Arm_Cortex_-M0-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c956a0a470195810936765c93
CY8C4146LWEHVS115XXQLA1
Hersteller: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.15V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 56-WQFN (8x8)
Grade: Automotive
Number of I/O: 41
Qualification: AEC-Q100
auf Bestellung 2600 Stücke:
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2+17.72 EUR
10+13.79 EUR
25+12.82 EUR
100+11.75 EUR
260+11.21 EUR
520+10.9 EUR
1040+10.65 EUR
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CY7C4221-15AXC CY7C4201%2C11%2C21%2C31%2C41%2C51_4421_RevD.pdf
CY7C4221-15AXC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 1KX9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 9K (1K x 9)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 35mA
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: No
FWFT Support: No
Voltage - Supply: 4.5 V ~ 5.5 V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFR3504 AUIRFR3504.pdf
AUIRFR3504
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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TLE9350BXSJXTMA1 Infineon-TLE9350BXSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e298bb08e1
TLE9350BXSJXTMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.95 EUR
Mindestbestellmenge: 2500 Stücke
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TLE9350BXSJXTMA1 Infineon-TLE9350BXSJ-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018b66e298bb08e1
TLE9350BXSJXTMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2502 Stücke:
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AnzahlPrivatkunde
11+1.99 EUR
15+1.44 EUR
25+1.3 EUR
100+1.14 EUR
250+1.07 EUR
500+1.02 EUR
1000+0.99 EUR
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CY9AF341LAPMC1-G-JNE2 infineon-cy9a340nb-fm3-mcu-datasheet-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee01fbe65a4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-datasheet&redirId=
CY9AF341LAPMC1-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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KITFX20FMC001TOBO1 Infineon-Development_board_KIT_FX20_FMC_001-UserManual-v04_00-EN.pdf?fileId=8ac78c8c95d1335f0195d225839d0151
KITFX20FMC001TOBO1
Hersteller: Infineon Technologies
Description: EZ-USB FX20 DEV KIT
Packaging: Box
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: FX20
auf Bestellung 35 Stücke:
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1+446.15 EUR
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TLD55421IVREGEVALTOBO1 Infineon-TLD5542-1IVREG-EVAL-UserManual-v01_00-EN.pdf?fileId=5546d4627294a88f01729a21d04448d7
TLD55421IVREGEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5542-1
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2V ~ 51V
Voltage - Input: 5.5V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5542-1
Outputs and Type: 1 Non-Isolated Output
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1+369.05 EUR
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TLD5191IVREGEVALTOBO1 Infineon-Infineon-TLD5191IVREG-EVAL-UM-v01_00-EN-UserManual-v02_00-EN.pdf?fileId=8ac78c8c80f4d3290181614c6dd24197
TLD5191IVREGEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 2.15V ~ 41.8V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
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1+356.65 EUR
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TLD5191HB2WEVALTOBO1 Infineon-Infineon-Z8F80286003-TLD5191HB2W_EVAL-UG-v01_00-EN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c80f4d32901815c017da76703
TLD5191HB2WEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5191ES
Packaging: Bulk
Features: Dimmable
Voltage - Output: 6.2V ~ 23.6V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
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1+553.78 EUR
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CY8CTMG200-24LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTMG200-24LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.29 EUR
10+11.86 EUR
25+11.01 EUR
100+10.07 EUR
490+9.37 EUR
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CY8CTMG200-32LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTMG200-32LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.66 EUR
10+12.17 EUR
25+11.29 EUR
100+10.33 EUR
490+9.6 EUR
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CY8CTMG201-32LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTMG201-32LQXI
Hersteller: Infineon Technologies
Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
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AnzahlPrivatkunde
2+15.85 EUR
10+12.32 EUR
25+11.44 EUR
100+10.46 EUR
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CY8CTMG200-48LTXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTMG200-48LTXI
Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.04 EUR
10+12.47 EUR
25+11.58 EUR
100+10.59 EUR
260+10.1 EUR
520+9.83 EUR
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IPG20N06S4L26AATMA1 Infineon-IPG20N06S4L_26A-DS-v01_00-en.pdf?fileId=db3a30433d346a2d013d454e0c275177
IPG20N06S4L26AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
427+1.25 EUR
Mindestbestellmenge: 427 Stücke
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CYTVII-B-E-BB Infineon-AUTOMOTIVE_BODY_MCU_BASE_BOARD_CYTVII-B-E-BB_QUICK_START_GUIDE-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f0345c21aa2
CYTVII-B-E-BB
Hersteller: Infineon Technologies
Description: CYTVII-B-E-BB
Packaging: Tray
Function: CAN, CXPI, FlexRay, LIN
Type: Interface
Contents: Board(s)
auf Bestellung 1 Stücke:
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1+1797.02 EUR
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IRF9335TRPBF irf9335pbf.pdf?fileId=5546d462533600a40153561147881da3
IRF9335TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
auf Bestellung 324499 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
872+0.61 EUR
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IRF9393TRPBFXTMA1 infineon-irf9393-datasheet-en.pdf
IRF9393TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
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F475R17N3E7B58BPSA1 448_F475R17N3E7B58.pdf
F475R17N3E7B58BPSA1
Hersteller: Infineon Technologies
Description: F475R17N3E7B58BPSA1
Packaging: Tray
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+201.4 EUR
10+170.27 EUR
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TLE49761KHTSA1 TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7
TLE49761KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLE49761KHTSA1 TLE4976x+Data+Sheet+V1_1.pdf?folderId=db3a30431689f4420116a096e1db033e&fileId=db3a304319c6f18c0119cd9980a57ae7
TLE49761KHTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
18+1.19 EUR
25+0.84 EUR
28+0.76 EUR
100+0.67 EUR
250+0.62 EUR
500+0.6 EUR
1000+0.58 EUR
Mindestbestellmenge: 18 Stücke
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ITS4035SEPDXUMA1 Infineon-ITS4035S-EP-D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bd900d8c44e83
ITS4035SEPDXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.78 EUR
Mindestbestellmenge: 3000 Stücke
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ITS4035SEPDXUMA1 Infineon-ITS4035S-EP-D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bd900d8c44e83
ITS4035SEPDXUMA1
Hersteller: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.84 EUR
10+3.62 EUR
25+3.31 EUR
100+2.96 EUR
250+2.81 EUR
500+2.71 EUR
1000+2.63 EUR
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CYT2B98DACQ0AZEGSHQLA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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CYT2B98DACQ0AZEGSTHUYA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
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CYW4373EUBGT InfineonCYW4373DataSheetv0800EN.pdf
CYW4373EUBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 128WLBGA
Packaging: Cut Tape (CT)
Package / Case: 128-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 128-WLBGA (4.51x5.43)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.66 EUR
10+16.18 EUR
25+15.33 EUR
100+14.16 EUR
250+13.46 EUR
500+12.96 EUR
1000+12.5 EUR
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CYW20705B0KWFBGT Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20705B0KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYW20713A1KUBXGT download
CYW20713A1KUBXGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+4.65 EUR
Mindestbestellmenge: 5000 Stücke
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CYW20713A1KUBXGT download
CYW20713A1KUBXGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Cut Tape (CT)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.71 EUR
10+6.66 EUR
25+6.3 EUR
100+5.8 EUR
250+5.49 EUR
500+5.27 EUR
1000+5.08 EUR
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BCM20702B0KWFBGT Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202
BCM20702B0KWFBGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG8P15N120KDPBF IRG8P15N120KD%28-E%29PbF.pdf
IRG8P15N120KDPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 30A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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TLS820F3ELV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS820F3
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS820F3
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1038.22 EUR
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TLS810B1EJV33BOARDTOBO1 Infineon-Z8F56638910-TLS8xxx1xJ-Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a424127c2725b
TLS810B1EJV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS810B1EJV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810B1EJV33
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+110.35 EUR
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REF3K3W3LFCPSUTOBO1 infineon-reference-design-ref-3k3w-3lfc-psu-applicationnotes-en.pdf
REF3K3W3LFCPSUTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Box
Voltage - Output: 50V
Voltage - Input: 180 ~ 265 VAC
Current - Output: 66A
Contents: Board(s)
Utilized IC / Part: TLS4120D0EPV33
Main Purpose: AC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 3.3kW
auf Bestellung 3 Stücke:
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1+2234.39 EUR
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FZ825R33HE4DBPSA1 Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584
FZ825R33HE4DBPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
auf Bestellung 1 Stücke:
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1+2142.62 EUR
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IAUCN04S7N012ATMA1 Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51
IAUCN04S7N012ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.99 EUR
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IAUCN04S7N012ATMA1 Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51
IAUCN04S7N012ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 8870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+2.42 EUR
100+1.63 EUR
500+1.29 EUR
1000+1.18 EUR
2000+1.12 EUR
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IQEH46NE2LM7ZCGSCATMA1 infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf
IQEH46NE2LM7ZCGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
Produkt ist nicht verfügbar
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IQEH46NE2LM7ZCGSCATMA1 infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf
IQEH46NE2LM7ZCGSCATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
auf Bestellung 5653 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.23 EUR
10+5.41 EUR
100+3.81 EUR
500+3.24 EUR
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ISCH69N04NM7VATMA1 infineon-isch69n04nm7v-datasheet-en.pdf
ISCH69N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISCH69N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
Produkt ist nicht verfügbar
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ISCH69N04NM7VATMA1 infineon-isch69n04nm7v-datasheet-en.pdf
ISCH69N04NM7VATMA1
Hersteller: Infineon Technologies
Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
auf Bestellung 4006 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.51 EUR
10+3.57 EUR
100+2.46 EUR
500+1.99 EUR
1000+1.9 EUR
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IDWD150G120C5XKSA1 Infineon-IDWD150G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473546a51abd
IDWD150G120C5XKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8485pF @ 1V, 100kHz
Current - Average Rectified (Io): 343A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.34 EUR
30+42.55 EUR
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IQFH99N06NM5ATMA1 Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777
IQFH99N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
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IQFH99N06NM5ATMA1 Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777
IQFH99N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.7 EUR
10+7.14 EUR
100+5.12 EUR
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IQFH86N06NM5ATMA1 Infineon-IQFH86N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e600b08076f
IQFH86N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 394A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 176µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 30 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.9 EUR
10+7.97 EUR
100+5.75 EUR
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IDWD50G120C5XKSA1 Infineon-IDWD50G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473528d41ab4
IDWD50G120C5XKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2890pF @ 1V, 100kHz
Current - Average Rectified (Io): 131A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.39 EUR
30+16.8 EUR
120+14.48 EUR
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IDWD60G120C5XKSA1 Infineon-IDWD60G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01954735328f1ab7
IDWD60G120C5XKSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
auf Bestellung 566 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+35.47 EUR
30+22.09 EUR
120+19.15 EUR
510+17.99 EUR
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CY8C4148AZQ-S445 infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf
CY8C4148AZQ-S445
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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