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PROF2BTS70021EPPDBTOBO1 PROF2BTS70021EPPDBTOBO1 Infineon Technologies Description: PROF_2 BTS7002-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7002-1EPP
Platform: Arduino
auf Bestellung 1 Stücke:
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1+80.20 EUR
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CYT2B78CADQ0AZEGS CYT2B78CADQ0AZEGS Infineon Technologies Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2 Description: TVII-B-E-1M-176 CFLASH 1MB
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
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1+25.75 EUR
10+20.39 EUR
25+19.06 EUR
100+17.59 EUR
400+16.59 EUR
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IRFP460PBF IRFP460PBF Infineon Technologies 91237.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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CY91F487TPMC-G-UJE1 Infineon Technologies Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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CY91F487PMC-GE1 CY91F487PMC-GE1 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 14x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, FIFO, SIO
Peripherals: DMA, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TD140N16SOFHPSA1 TD140N16SOFHPSA1 Infineon Technologies Infineon-TT140N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d052319e2e66 Description: SCR MODULE 1.6KV 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 400 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CYW55513IUBGT CYW55513IUBGT Infineon Technologies Infineon-AIROC_TM_CYW55513_2_1_Wi-Fi_Bluetooth_R_combo_PRODUCT_BRIEF-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024f63c0f3e31 Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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2+15.72 EUR
10+12.25 EUR
25+11.38 EUR
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CYW55911IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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CYW55912IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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CYW55913IUBGTXTMA1 Infineon Technologies Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00 Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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FM24C16B-GTR FM24C16B-GTR Infineon Technologies Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 5881 Stücke:
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6+3.10 EUR
10+2.90 EUR
25+2.81 EUR
50+2.75 EUR
100+2.69 EUR
250+2.60 EUR
500+2.54 EUR
1000+2.48 EUR
Mindestbestellmenge: 6
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IRFHM8329TRPBF IRFHM8329TRPBF Infineon Technologies irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
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480+0.47 EUR
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IRG7PH35UD-EP IRG7PH35UD-EP Infineon Technologies irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
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69+7.11 EUR
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IRG7PH35UD-EP IRG7PH35UD-EP Infineon Technologies irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
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IRG7PH35U-EP IRG7PH35U-EP Infineon Technologies IRG7PH35UPBF%2CU-EP.pdf Description: IGBT TRENCH 1200V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
Produkt ist nicht verfügbar
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EVAL1ED3145MC12HSICTOBO1 EVAL1ED3145MC12HSICTOBO1 Infineon Technologies UG2024-07-Eval-1ED3145MC12H-SiC.pdf Description: EVAL BOARD FOR 1ED3145MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3145MC12H
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PMC41410AUMA1 Infineon Technologies Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMC41520AUMA1 Infineon Technologies Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2BL8BAAQ1AZSGSHQLA1 CYT2BL8BAAQ1AZSGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
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CYT2BL8BAAQ1AZSGSTHUYA1 CYT2BL8BAAQ1AZSGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYT2BL8BAAQ1AZEGSHQLA1 CYT2BL8BAAQ1AZEGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYT2BL8BAAQ1AZEGSTHUYA1 CYT2BL8BAAQ1AZEGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYT2BL8CAAQ1AZSGSHQLA1 CYT2BL8CAAQ1AZSGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
Produkt ist nicht verfügbar
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CYT2BL8CAAQ1AZSGSTHUYA1 CYT2BL8CAAQ1AZSGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYT2BL8CAAQ1AZEGSHQLA1 CYT2BL8CAAQ1AZEGSHQLA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
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CYT2BL8CAAQ1AZEGSTHUYA1 CYT2BL8CAAQ1AZEGSTHUYA1 Infineon Technologies Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8 Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
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IMCQ120R007M2HXTMA1 Infineon Technologies Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMCQ120R005M2HXTMA1 Infineon Technologies Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
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IMCQ120R004M2HXTMA1 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
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XDP700002XUMA1 XDP700002XUMA1 Infineon Technologies Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6 Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Tape & Reel (TR)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
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XDP700002XUMA1 XDP700002XUMA1 Infineon Technologies Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6 Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Cut Tape (CT)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
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REF5AR3995BZ114W1TOBO1 REF5AR3995BZ114W1TOBO1 Infineon Technologies UM_REF_5AR3995BZ-1_14W1.pdf Description: REF5AR3995BZ114W1TOBO1
Packaging: Box
Contents: Board(s)
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REF5AR0680BZS144W1TOBO1 REF5AR0680BZS144W1TOBO1 Infineon Technologies UM_REF_5AR0680BZS-1_44W1.pdf Description: REF5AR0680BZS144W1TOBO1
Packaging: Box
Contents: Board(s)
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REF5AR4780BZS114W1TOBO1 REF5AR4780BZS114W1TOBO1 Infineon Technologies UM_REF_5AR4780BZS-1_14W1.pdf Description: REF5AR4780BZS114W1TOBO1
Packaging: Box
Contents: Board(s)
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AUIRL2203N AUIRL2203N Infineon Technologies AUIRL2203N.pdf Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Qualification: AEC-Q101
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CY90F546GSPF-GE1 CY90F546GSPF-GE1 Infineon Technologies Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
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CY62158ELL-45ZSXI CY62158ELL-45ZSXI Infineon Technologies download Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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CY62157H30-45BVXA CY62157H30-45BVXA Infineon Technologies Infineon-CY62157H30-45BVXA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fb2e298275f Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
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IRFS4620PBF IRFS4620PBF Infineon Technologies irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
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IR21834PBF IR21834PBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IR21834PBF IR21834PBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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TLE9251SJXUMA1 TLE9251SJXUMA1 Infineon Technologies Infineon-TLE9251-DS-v01_10-EN.pdf?fileId=5546d462647040d10164708e75ef0850 Description: IC TRANSCEIVER 1/1 PGDSO860
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-60
Receiver Hysteresis: 30 mV
Grade: Automotive
Qualification: AEC-Q100
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IDWD75E120D7XKSA1 IDWD75E120D7XKSA1 Infineon Technologies IDWD75E120D7_Rev1.00_12-15-23.pdf Description: DIODE STD 1200V 116A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 195 ns
Technology: Standard
Current - Average Rectified (Io): 116A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 75 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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IRG7PSH50UDPBF IRG7PSH50UDPBF Infineon Technologies IRG7PSH50UDPbF.pdf Description: IGBT TRENCH 1200V 116A TO274-3
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
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IRL6283MTRPBF IRL6283MTRPBF Infineon Technologies irl6283mpbf.pdf?fileId=5546d462533600a40153565fe9452573 Description: MOSFET N-CH 20V 38A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: DIRECTFET™ MD
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8292 pF @ 10 V
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IAUCN08S7N034ATMA1 IAUCN08S7N034ATMA1 Infineon Technologies IAUCN08S7N034-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
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IAUCN08S7N034ATMA1 IAUCN08S7N034ATMA1 Infineon Technologies IAUCN08S7N034-Data-Sheet-10-Infineon.pdf Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
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IAUMN10S5N016GAUMA1 IAUMN10S5N016GAUMA1 Infineon Technologies Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
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IAUMN10S5N016GAUMA1 IAUMN10S5N016GAUMA1 Infineon Technologies Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
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IR4427PBF IR4427PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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AUIRFR4104 AUIRFR4104 Infineon Technologies AUIRF%28R%2CU%294104.pdf Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
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AUIRFR4104TRL AUIRFR4104TRL Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
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FS200R12W3T7B11BPSA1 FS200R12W3T7B11BPSA1 Infineon Technologies Infineon-FS200R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b3d917394a Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40300 pF @ 25 V
auf Bestellung 1 Stücke:
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1+155.76 EUR
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IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR21363JTRPBF IR21363JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRG7PH46UPBF IRG7PH46UPBF Infineon Technologies IRG7PH46UPbF%2CU-EP.pdf Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
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59+7.78 EUR
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IR21531DPBF IR21531DPBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
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10+3.86 EUR
50+3.35 EUR
100+3.19 EUR
250+3.02 EUR
500+2.92 EUR
1000+2.84 EUR
2500+2.75 EUR
5000+2.70 EUR
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CY8C4126LQE-S453 CY8C4126LQE-S453 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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XMC1403Q048X0200AAXTMA1 XMC1403Q048X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Produkt ist nicht verfügbar
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IR2136JTRPBF IR2136JTRPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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500+5.68 EUR
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PROF2BTS70021EPPDBTOBO1
PROF2BTS70021EPPDBTOBO1
Hersteller: Infineon Technologies
Description: PROF_2 BTS7002-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7002-1EPP
Platform: Arduino
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CYT2B78CADQ0AZEGS Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2
CYT2B78CADQ0AZEGS
Hersteller: Infineon Technologies
Description: TVII-B-E-1M-176 CFLASH 1MB
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 96K x 8
Core Processor: ARM® Cortex®-M0+/M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 128
DigiKey Programmable: Not Verified
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Anzahl Preis
1+25.75 EUR
10+20.39 EUR
25+19.06 EUR
100+17.59 EUR
400+16.59 EUR
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IRFP460PBF 91237.pdf
IRFP460PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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CY91F487TPMC-G-UJE1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tray
Produkt ist nicht verfügbar
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CY91F487PMC-GE1 download
CY91F487PMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: FR60 RISC
Data Converters: A/D 14x8/10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 4V ~ 5.5V
Connectivity: I2C, FIFO, SIO
Peripherals: DMA, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 77
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TD140N16SOFHPSA1 Infineon-TT140N-DS-v03_04-EN.pdf?fileId=5546d46148a8bbb90148d052319e2e66
TD140N16SOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 220A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 400 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4700A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CYW55513IUBGT Infineon-AIROC_TM_CYW55513_2_1_Wi-Fi_Bluetooth_R_combo_PRODUCT_BRIEF-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024f63c0f3e31
CYW55513IUBGT
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 143-BGA, WLBGA
Sensitivity: -105.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 3.6MB ROM, 1.7MB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 39
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
auf Bestellung 45 Stücke:
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Anzahl Preis
2+15.72 EUR
10+12.25 EUR
25+11.38 EUR
Mindestbestellmenge: 2
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CYW55911IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
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CYW55912IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Hersteller: Infineon Technologies
Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.5GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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CYW55913IUBGTXTMA1 Infineon-AIROC_TM_CYW55913_2_1_Connected_MCU_with_Wi-Fi_Bluetooth_R_Low_Energy_5-ProductBrief-v02_00-EN.pdf?fileId=8ac78c8c901008d1019024ed031a3e00
Hersteller: Infineon Technologies
Description: WI-FI MCU
Packaging: Tape & Reel (TR)
Package / Case: 143-BGA, WLBGA
Sensitivity: -111.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 6GHz
Memory Size: 2MB ROM, 768kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Power - Output: 19dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 2Mbps
Supplier Device Package: SG-XFWLB-143
GPIO: 47
Modulation: OFDM
RF Family/Standard: 802.15.4
Serial Interfaces: I2C, SDIO, SPI, UART
Produkt ist nicht verfügbar
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FM24C16B-GTR Infineon-FM24C16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec98bd541dd&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM24C16B-GTR
Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 1 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
auf Bestellung 5881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.10 EUR
10+2.90 EUR
25+2.81 EUR
50+2.75 EUR
100+2.69 EUR
250+2.60 EUR
500+2.54 EUR
1000+2.48 EUR
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IRFHM8329TRPBF irfhm8329pbf.pdf?fileId=5546d462533600a4015356234f3d1f4d
IRFHM8329TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/57A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 10 V
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Anzahl Preis
480+0.47 EUR
Mindestbestellmenge: 480
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IRG7PH35UD-EP irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad
IRG7PH35UD-EP
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
auf Bestellung 416 Stücke:
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Anzahl Preis
69+7.11 EUR
Mindestbestellmenge: 69
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IRG7PH35UD-EP irg7ph35udpbf.pdf?fileId=5546d462533600a40153564d601323ad
IRG7PH35UD-EP
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 50A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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IRG7PH35U-EP IRG7PH35UPBF%2CU-EP.pdf
IRG7PH35U-EP
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/160ns
Switching Energy: 1.06mJ (on), 620µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 210 W
Produkt ist nicht verfügbar
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EVAL1ED3145MC12HSICTOBO1 UG2024-07-Eval-1ED3145MC12H-SiC.pdf
EVAL1ED3145MC12HSICTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1ED3145MC12H
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3145MC12H
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Anzahl Preis
1+146.52 EUR
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PMC41410AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PMC41520AUMA1
Hersteller: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2BL8BAAQ1AZSGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZSGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYT2BL8BAAQ1AZSGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZSGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL8BAAQ1AZEGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZEGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL8BAAQ1AZEGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8BAAQ1AZEGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL8CAAQ1AZSGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZSGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL8CAAQ1AZSGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZSGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 64x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Grade: Automotive
Number of I/O: 152
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CYT2BL8CAAQ1AZEGSHQLA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZEGSHQLA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CYT2BL8CAAQ1AZEGSTHUYA1 Infineon-TRAVEO_2G_CY2BL-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c82ce566401836c4d5e9a46c8
CYT2BL8CAAQ1AZEGSTHUYA1
Hersteller: Infineon Technologies
Description: TRAVEO-2 BODY ENTRYLEVEL
Packaging: Tape & Reel (TR)
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 82x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
Produkt ist nicht verfügbar
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IMCQ120R007M2HXTMA1 Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMCQ120R005M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IMCQ120R004M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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XDP700002XUMA1 Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6
XDP700002XUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Tape & Reel (TR)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+7.57 EUR
Mindestbestellmenge: 4000
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XDP700002XUMA1 Infineon-XDP700-002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc1866abc54f6
XDP700002XUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Features: Fault Timeout, Latched Fault, OVP, PMBus, UVLO
Packaging: Cut Tape (CT)
Package / Case: 29-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Hot Swap Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 5.5V ~ 80V
Applications: General Purpose
Internal Switch(s): Yes
Current - Output (Max): 1.5A
Supplier Device Package: 29-VQFN (6x6)
Programmable Features: Current Limit, Fault Timeout, OVP, UVLO
Number of Channels: 1
Current - Supply: 7 mA
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.96 EUR
10+10.83 EUR
25+10.05 EUR
100+9.19 EUR
250+8.78 EUR
500+8.54 EUR
1000+8.33 EUR
Mindestbestellmenge: 2
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REF5AR3995BZ114W1TOBO1 UM_REF_5AR3995BZ-1_14W1.pdf
REF5AR3995BZ114W1TOBO1
Hersteller: Infineon Technologies
Description: REF5AR3995BZ114W1TOBO1
Packaging: Box
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+179.33 EUR
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REF5AR0680BZS144W1TOBO1 UM_REF_5AR0680BZS-1_44W1.pdf
REF5AR0680BZS144W1TOBO1
Hersteller: Infineon Technologies
Description: REF5AR0680BZS144W1TOBO1
Packaging: Box
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+179.33 EUR
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REF5AR4780BZS114W1TOBO1 UM_REF_5AR4780BZS-1_14W1.pdf
REF5AR4780BZS114W1TOBO1
Hersteller: Infineon Technologies
Description: REF5AR4780BZS114W1TOBO1
Packaging: Box
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+222.83 EUR
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AUIRL2203N AUIRL2203N.pdf
AUIRL2203N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY90F546GSPF-GE1 Infineon-16-bit_Microcontroller_F2MC-16LX_MB90540G_545G_Series-AdditionalTechnicalInformation-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edc8f4d6071&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
CY90F546GSPF-GE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SCI, Serial I/O, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 81
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62158ELL-45ZSXI download
CY62158ELL-45ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.01 EUR
10+22.27 EUR
25+21.57 EUR
50+21.05 EUR
135+20.31 EUR
270+19.80 EUR
540+19.30 EUR
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CY62157H30-45BVXA Infineon-CY62157H30-45BVXA-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fb2e298275f
CY62157H30-45BVXA
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFS4620PBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
IRFS4620PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 77.5mOhm @ 15A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Produkt ist nicht verfügbar
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IR21834PBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
104+4.50 EUR
Mindestbestellmenge: 104
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IR21834PBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE9251SJXUMA1 Infineon-TLE9251-DS-v01_10-EN.pdf?fileId=5546d462647040d10164708e75ef0850
TLE9251SJXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO860
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-60
Receiver Hysteresis: 30 mV
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IDWD75E120D7XKSA1 IDWD75E120D7_Rev1.00_12-15-23.pdf
IDWD75E120D7XKSA1
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 116A PGTO24722
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 195 ns
Technology: Standard
Current - Average Rectified (Io): 116A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 75 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.85 EUR
30+4.92 EUR
120+4.49 EUR
Mindestbestellmenge: 3
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IRG7PSH50UDPBF IRG7PSH50UDPbF.pdf
IRG7PSH50UDPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 116A TO274-3
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 190 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO274-3-903
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/430ns
Switching Energy: 3.6mJ (on), 2.2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 440 nC
Current - Collector (Ic) (Max): 116 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 462 W
Produkt ist nicht verfügbar
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IRL6283MTRPBF irl6283mpbf.pdf?fileId=5546d462533600a40153565fe9452573
IRL6283MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 38A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: DIRECTFET™ MD
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8292 pF @ 10 V
Produkt ist nicht verfügbar
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IAUCN08S7N034ATMA1 IAUCN08S7N034-Data-Sheet-10-Infineon.pdf
IAUCN08S7N034ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN08S7N034ATMA1 IAUCN08S7N034-Data-Sheet-10-Infineon.pdf
IAUCN08S7N034ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 4047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.21 EUR
10+2.71 EUR
100+1.93 EUR
500+1.55 EUR
1000+1.49 EUR
Mindestbestellmenge: 5
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IAUMN10S5N016GAUMA1 Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117
IAUMN10S5N016GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUMN10S5N016GAUMA1 Infineon-IAUMN10S5N016G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3bf3f51117
IAUMN10S5N016GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
10+6.35 EUR
100+5.39 EUR
Mindestbestellmenge: 3
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IR4427PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
auf Bestellung 589 Stücke:
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Anzahl Preis
5+4.29 EUR
10+3.20 EUR
50+2.77 EUR
100+2.63 EUR
250+2.49 EUR
500+2.40 EUR
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AUIRFR4104 AUIRF%28R%2CU%294104.pdf
AUIRFR4104
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFR4104TRL fundamentals-of-power-semiconductors
AUIRFR4104TRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FS200R12W3T7B11BPSA1 Infineon-FS200R12W3T7_B11-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b18b3d917394a
FS200R12W3T7B11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY AG-EASY3B-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 20 µA
Input Capacitance (Cies) @ Vce: 40300 pF @ 25 V
auf Bestellung 1 Stücke:
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Anzahl Preis
1+155.76 EUR
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IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IR21363JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR21363JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.84 EUR
10+9.17 EUR
25+8.49 EUR
100+7.76 EUR
Mindestbestellmenge: 2
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IRG7PH46UPBF IRG7PH46UPbF%2CU-EP.pdf
IRG7PH46UPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 1200V 130A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/410ns
Switching Energy: 2.56mJ (on), 1.78mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 469 W
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+7.78 EUR
Mindestbestellmenge: 59
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IR21531DPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531DPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
auf Bestellung 16657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.14 EUR
10+3.86 EUR
50+3.35 EUR
100+3.19 EUR
250+3.02 EUR
500+2.92 EUR
1000+2.84 EUR
2500+2.75 EUR
5000+2.70 EUR
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CY8C4126LQE-S453 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4126LQE-S453
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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XMC1403Q048X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q048X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Number of I/O: 34
Produkt ist nicht verfügbar
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IR2136JTRPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
500+5.68 EUR
Mindestbestellmenge: 500
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