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BGA535N6E6327XTSA1 BGA535N6E6327XTSA1 Infineon Technologies Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20 Description: RF MMIC SUB 3 GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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BGA535N6E6327XTSA1 BGA535N6E6327XTSA1 Infineon Technologies Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20 Description: RF MMIC SUB 3 GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
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27+0.67 EUR
28+0.64 EUR
100+0.58 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.5 EUR
5000+0.46 EUR
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFSL5615PBF IRFSL5615PBF Infineon Technologies irfs5615pbf.pdf?fileId=5546d462533600a40153563a5d3521c4 Description: MOSFET N-CH 150V 33A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
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SPW20N60CFDFKSA1 SPW20N60CFDFKSA1 Infineon Technologies SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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DD89N12KHPSA1 DD89N12KHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1200V 89A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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DD171N12KKHPSA2 DD171N12KKHPSA2 Infineon Technologies Infineon-DD171N-DataSheet-v03_01-EN.pdf Description: DIODE MODULE GEN PURP 1200V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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DD350N12KHPSA1 DD350N12KHPSA1 Infineon Technologies Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50 Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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DD350N12KHPSA1 DD350N12KHPSA1 Infineon Technologies Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50 Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
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ND89N12KXPSA1 Infineon Technologies infineon-dd89n-ds-en-de.pdf?folderId=db3a304412b407950112b42f6f3e4b72&fileId=db3a304412b407950112b42fb9c84d3a&location=en.Products.Power_Modules_and_Discs.Thyristor___Diode_Modules.PowerBLOCK_Rect Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Produkt ist nicht verfügbar
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IMZA120R040M2HXKSA1 IMZA120R040M2HXKSA1 Infineon Technologies infineon-imza120r040m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fd4e92d5db4 Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
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ICE184EMXUMA1 ICE184EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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ICE184EMXUMA1 ICE184EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 999 Stücke:
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3+5.95 EUR
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ICE186EMXUMA1 ICE186EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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ICE186EMXUMA1 ICE186EMXUMA1 Infineon Technologies infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
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IRFP460PBF Infineon Technologies 91237.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1404ZSPBF IRF1404ZSPBF Infineon Technologies IRSDS19311-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 1465 Stücke:
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FS17MR12W2M1HB11ABPSA2 FS17MR12W2M1HB11ABPSA2 Infineon Technologies 448_FS17MR12W2M1H_B11_A.pdf Description: FS17MR12W2M1HB11ABPSA2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
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SDT06S60 SDT06S60 Infineon Technologies SDP_T06S60_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b439cfc26eec description Description: DIODE SIL CARB 600V 6A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
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XDPE19283B0000XUMA1 XDPE19283B0000XUMA1 Infineon Technologies Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
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XDPE19283B0000XUMA1 XDPE19283B0000XUMA1 Infineon Technologies Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
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DEMOIMRBMSCTRLV1TOBO1 DEMOIMRBMSCTRLV1TOBO1 Infineon Technologies Infineon-UG091835_mobile_robot_IMR_battery_management_control_using_DEMO_IMR_BMSCTRL_V1-UserManual-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec143879376df Description: DEMO_IMR_BMSCTRL_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: I2C/SPI Interface(s)
Embedded: Yes, MCU
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DEMOIMRBMSPWRV1TOBO1 DEMOIMRBMSPWRV1TOBO1 Infineon Technologies Infineon-UG092042_mobile_Robot_IMR_battery_management_system_power_using_DEMO_IMR_BMSPWR_V1-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec1438dbc76e3 Description: DEMO_IMR_BMSPWR_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU
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IPD50N06S4L08ATMA1 IPD50N06S4L08ATMA1 Infineon Technologies INFNS14103-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2268 Stücke:
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567+0.79 EUR
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IDW12G65C5FKSA1 IDW12G65C5FKSA1 Infineon Technologies IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f Description: DIODE SIC 650V 12A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
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ESD118B1W01005E6327XTSA1 ESD118B1W01005E6327XTSA1 Infineon Technologies ESD118B1W01005E6327XTSA1.pdf Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 0.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 7.9V (Typ)
Power - Peak Pulse: 64W
Power Line Protection: No
auf Bestellung 14765 Stücke:
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250+0.07 EUR
291+0.061 EUR
349+0.051 EUR
386+0.046 EUR
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1000+0.04 EUR
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IPL60R140CFD7AUMA1 IPL60R140CFD7AUMA1 Infineon Technologies Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7 Description: HIGH POWER_NEW
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Supplier Device Package: PG-VSON-4
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IPD130N10NF2SATMA1 IPD130N10NF2SATMA1 Infineon Technologies Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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IPD130N10NF2SATMA1 IPD130N10NF2SATMA1 Infineon Technologies Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
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IGW30N100TFKSA1 IGW30N100TFKSA1 Infineon Technologies IGW30N100T.pdf Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
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CG10148AF Infineon Technologies Description: IC FRAM
Packaging: Tray
Memory Format: FRAM
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CG10146AFT Infineon Technologies Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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AIMDQ75R060M1HXUMA1 AIMDQ75R060M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R060M1HXUMA1 AIMDQ75R060M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R016M2HXTMA1 AIMDQ75R016M2HXTMA1 Infineon Technologies Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R016M2HXTMA1 AIMDQ75R016M2HXTMA1 Infineon Technologies Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650 Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
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CHL8328-04CRT CHL8328-04CRT Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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IGB08N120S7ATMA1 IGB08N120S7ATMA1 Infineon Technologies Infineon-IGB08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917ea612393266 Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
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IGB08N120S7ATMA1 IGB08N120S7ATMA1 Infineon Technologies Infineon-IGB08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917ea612393266 Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
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4+4.86 EUR
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100+2.2 EUR
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IRG6B330UDPBF IRG6B330UDPBF Infineon Technologies irg6b330udpbf.pdf?fileId=5546d462533600a40153564cc78e2387 Description: IGBT TRENCH 330V 70A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.76V @ 15V, 120A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 47ns/176ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 160 W
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IKWH50N75EH7XKSA1 IKWH50N75EH7XKSA1 Infineon Technologies infineon-ikwh50n75eh7-datasheet-en.pdf Description: INDUSTRY 14
Packaging: Tube
auf Bestellung 220 Stücke:
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10+6.01 EUR
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IPB085N15NM6ATMA1 IPB085N15NM6ATMA1 Infineon Technologies DS_IPB085N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
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IPB085N15NM6ATMA1 IPB085N15NM6ATMA1 Infineon Technologies DS_IPB085N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
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TC4D9XP20MF500MCABKXUMA1 TC4D9XP20MF500MCABKXUMA1 Infineon Technologies Description: AURIX 3G-ACEE
Packaging: Cut Tape (CT)
Package / Case: 672-FBGA
Mounting Type: Surface Mount
Speed: 500MHz
Program Memory Size: 20MB (20M x 8)
RAM Size: 10M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 64 SAR
Core Size: 32-Bit12
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: CANbus, C2Slb, I2C, SCI, SPI
Supplier Device Package: PG-F2HBGA-436
Grade: Automotive
Qualification: AEC-Q100
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CY7C1318KV18-250BZI CY7C1318KV18-250BZI Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CYUSB2315BF104AXIXQMA1 CYUSB2315BF104AXIXQMA1 Infineon Technologies Description: CYUSB2315BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
auf Bestellung 608 Stücke:
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1+22.35 EUR
10+17.68 EUR
25+16.51 EUR
100+15.23 EUR
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CYUSB2316BF104AXIXQMA1 CYUSB2316BF104AXIXQMA1 Infineon Technologies Description: CYUSB2316BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
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CYUSB2317BF104AXIXQMA1 CYUSB2317BF104AXIXQMA1 Infineon Technologies Description: CYUSB2317BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
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CYUSB2318BF104AXIXQMA1 CYUSB2318BF104AXIXQMA1 Infineon Technologies Description: CYUSB2318BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
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BGA6L1BN6E6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC RF AMP TSNP-6
Packaging: Tape & Reel (TR)
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IRF540ZLPBF IRF540ZLPBF Infineon Technologies irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6 Description: MOSFET N-CH 100V 36A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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ISC008N06LM6ATMA1 ISC008N06LM6ATMA1 Infineon Technologies infineon-isc008n06lm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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EVALAUDIOMA2304DNSBTOBO1 EVALAUDIOMA2304DNSBTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_AUDIO_MA2304DNS_B_and_EVAL_AUDIO_MA2304PNS_B-UserManual-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01894e562c0a37a9 Description: EVAL BOARD FOR MA2304DNS
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 37W x 2 @ 4Ohm
Utilized IC / Part: MA2304DNS
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+402.27 EUR
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KITPSE84EVALTOBO1 KITPSE84EVALTOBO1 Infineon Technologies infineon-psoc-edge-e84-evaluation-kit-product-brief.pdf Description: PSOC EDGE E84 EVAL KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, Accessories
Core Processor: ARM® Cortex®-M33, Cortex®-M55
Utilized IC / Part: PSE846GPS2DBZC4
auf Bestellung 3 Stücke:
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1+557.06 EUR
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TLE493DW3B6B1HTSA1 TLE493DW3B6B1HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
8+2.47 EUR
10+2.35 EUR
25+2.21 EUR
50+2.12 EUR
100+2.03 EUR
500+1.85 EUR
1000+1.79 EUR
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TLE493DW3B6B2HTSA1 TLE493DW3B6B2HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE493DW3B6B3HTSA1 TLE493DW3B6B3HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
8+2.47 EUR
10+2.35 EUR
25+2.21 EUR
50+2.12 EUR
100+2.03 EUR
500+1.85 EUR
1000+1.79 EUR
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IPAW60R360P7SXKSA1 IPAW60R360P7SXKSA1 Infineon Technologies infineon-ipaw60r360p7s-datasheet-en.pdf Description: MOSFET N-CH 650V 9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
390+1.17 EUR
Mindestbestellmenge: 390
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REF65WHFZVSLPPAG2TOBO1 REF65WHFZVSLPPAG2TOBO1 Infineon Technologies infineon-65-w-atq-gan-usb-pd-dual-c-power-charger-and-adaptor-solution-demo-board-ref-65w-2c-gan-pag1-test-report-usermanual-en.pdf Description: OTHERS-WCS
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CYPAP212A1-14SXI
Embedded: No
Produkt ist nicht verfügbar
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BGA535N6E6327XTSA1 Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20
BGA535N6E6327XTSA1
Hersteller: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
Produkt ist nicht verfügbar
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BGA535N6E6327XTSA1 Infineon-BGA535N6-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01914688b9c83f20
BGA535N6E6327XTSA1
Hersteller: Infineon Technologies
Description: RF MMIC SUB 3 GHZ
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.164GHz ~ 1.615GHz
RF Type: GNSS
Voltage - Supply: 1.1V ~ 3.3V
Gain: 18dB
Current - Supply: 2.3mA
Noise Figure: 1dB
P1dB: -4.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-TSNP-6-10
auf Bestellung 9042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
27+0.67 EUR
28+0.64 EUR
100+0.58 EUR
250+0.55 EUR
500+0.53 EUR
1000+0.5 EUR
5000+0.46 EUR
Mindestbestellmenge: 23
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
102+4.37 EUR
Mindestbestellmenge: 102
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFSL5615PBF irfs5615pbf.pdf?fileId=5546d462533600a40153563a5d3521c4
IRFSL5615PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 904 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
203+2.19 EUR
Mindestbestellmenge: 203
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SPW20N60CFDFKSA1 SPW20N60CFD_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c02c5464d
SPW20N60CFDFKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+4.47 EUR
Mindestbestellmenge: 100
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DD89N12KHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
DD89N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1200V 89A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 89A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+166.48 EUR
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DD171N12KKHPSA2 Infineon-DD171N-DataSheet-v03_01-EN.pdf
DD171N12KKHPSA2
Hersteller: Infineon Technologies
Description: DIODE MODULE GEN PURP 1200V 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+228.32 EUR
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DD350N12KHPSA1 Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50
DD350N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+242.33 EUR
Mindestbestellmenge: 2
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DD350N12KHPSA1 Infineon-DD350N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fbc334d50
DD350N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1200V 350A MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 350A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Produkt ist nicht verfügbar
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ND89N12KXPSA1 infineon-dd89n-ds-en-de.pdf?folderId=db3a304412b407950112b42f6f3e4b72&fileId=db3a304412b407950112b42fb9c84d3a&location=en.Products.Power_Modules_and_Discs.Thyristor___Diode_Modules.PowerBLOCK_Rect
Hersteller: Infineon Technologies
Description: DIODE STANDARD 1200V 89A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 89A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Produkt ist nicht verfügbar
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IMZA120R040M2HXKSA1 infineon-imza120r040m2h-datasheet-en.pdf?fileId=8ac78c8c9625080601968fd4e92d5db4
IMZA120R040M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA120R040M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
auf Bestellung 345 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.26 EUR
30+9.07 EUR
120+7.71 EUR
Mindestbestellmenge: 2
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ICE184EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE184EMXUMA1
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
Produkt ist nicht verfügbar
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ICE184EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE184EMXUMA1
Hersteller: Infineon Technologies
Description: ICE184EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.95 EUR
10+4.49 EUR
25+4.13 EUR
100+3.73 EUR
250+3.53 EUR
500+3.51 EUR
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ICE186EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE186EMXUMA1
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.24 EUR
Mindestbestellmenge: 1000
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ICE186EMXUMA1 infineon-ice18xem-datasheet-en.pdf?fileId=8ac78c8c962508060196807d354e048a
ICE186EMXUMA1
Hersteller: Infineon Technologies
Description: ICE186EMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 25kHz ~ 150kHz
Internal Switch(s): No
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.4V ~ 14.6V, 9.45V ~ 28.9V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: Soft Start
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.44 EUR
10+5.67 EUR
25+5.22 EUR
100+4.73 EUR
250+4.51 EUR
Mindestbestellmenge: 3
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IRFP460PBF 91237.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1404ZSPBF IRSDS19311-1.pdf?t.download=true&u=5oefqw
IRF1404ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
auf Bestellung 1465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
279+1.6 EUR
Mindestbestellmenge: 279
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FS17MR12W2M1HB11ABPSA2 448_FS17MR12W2M1H_B11_A.pdf
FS17MR12W2M1HB11ABPSA2
Hersteller: Infineon Technologies
Description: FS17MR12W2M1HB11ABPSA2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+146.98 EUR
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SDT06S60 description SDP_T06S60_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b439cfc26eec
SDT06S60
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Produkt ist nicht verfügbar
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XDPE19283B0000XUMA1 Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d
XDPE19283B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
Produkt ist nicht verfügbar
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XDPE19283B0000XUMA1 Infineon-XDPE19283B-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7c1bd357d
XDPE19283B0000XUMA1
Hersteller: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 2.8V
Mounting Type: Surface Mount
Number of Outputs: 8
Applications: Controller, AMD
Supplier Device Package: PG-VQFN-40-13
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
10+7.11 EUR
25+6.57 EUR
100+5.98 EUR
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DEMOIMRBMSCTRLV1TOBO1 Infineon-UG091835_mobile_robot_IMR_battery_management_control_using_DEMO_IMR_BMSCTRL_V1-UserManual-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec143879376df
DEMOIMRBMSCTRLV1TOBO1
Hersteller: Infineon Technologies
Description: DEMO_IMR_BMSCTRL_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: I2C/SPI Interface(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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DEMOIMRBMSPWRV1TOBO1 Infineon-UG092042_mobile_Robot_IMR_battery_management_system_power_using_DEMO_IMR_BMSPWR_V1-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec1438dbc76e3
DEMOIMRBMSPWRV1TOBO1
Hersteller: Infineon Technologies
Description: DEMO_IMR_BMSPWR_V1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Primary Attributes: Isolated
Secondary Attributes: SPI Interface(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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IPD50N06S4L08ATMA1 INFNS14103-1.pdf?t.download=true&u=5oefqw
IPD50N06S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
567+0.79 EUR
Mindestbestellmenge: 567
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IDW12G65C5FKSA1 IDW12G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4699ca7206f
IDW12G65C5FKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 12A PGTO247341
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
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ESD118B1W01005E6327XTSA1 ESD118B1W01005E6327XTSA1.pdf
ESD118B1W01005E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: Telecom
Capacitance @ Frequency: 0.8pF @ 1GHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 3.6V
Voltage - Clamping (Max) @ Ipp: 7.9V (Typ)
Power - Peak Pulse: 64W
Power Line Protection: No
auf Bestellung 14765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
250+0.07 EUR
291+0.061 EUR
349+0.051 EUR
386+0.046 EUR
500+0.043 EUR
1000+0.04 EUR
2500+0.038 EUR
5000+0.036 EUR
Mindestbestellmenge: 125
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IPL60R140CFD7AUMA1 Infineon-MOSFET_CoolMOS_CFD7_600V-PB-v01_00-EN.pdf?fileId=5546d4625f96303e015fdd5758e81db7
IPL60R140CFD7AUMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Supplier Device Package: PG-VSON-4
auf Bestellung 568 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
168+2.67 EUR
Mindestbestellmenge: 168
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IPD130N10NF2SATMA1 Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86
IPD130N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
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IPD130N10NF2SATMA1 Infineon-IPD130N10NF2S-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c81ae03fc0181c7f00cb13d86
IPD130N10NF2SATMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
11+1.69 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 7
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IGW30N100TFKSA1 IGW30N100T.pdf
IGW30N100TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1000V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/535ns
Switching Energy: 3.8mJ
Test Condition: 600V, 30A, 16Ohm, 15V
Gate Charge: 217 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 412 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+44.87 EUR
Mindestbestellmenge: 10
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CG10148AF
Hersteller: Infineon Technologies
Description: IC FRAM
Packaging: Tray
Memory Format: FRAM
Produkt ist nicht verfügbar
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CG10146AFT
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
Produkt ist nicht verfügbar
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AIMDQ75R060M1HXUMA1 Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0
AIMDQ75R060M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+5.17 EUR
Mindestbestellmenge: 750
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AIMDQ75R060M1HXUMA1 Infineon-AIMDQ75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef0af5e732ae0
AIMDQ75R060M1HXUMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.04 EUR
10+8.19 EUR
100+6.33 EUR
Mindestbestellmenge: 2
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AIMDQ75R016M2HXTMA1 Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650
AIMDQ75R016M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R016M2HXTMA1 Infineon-AIMDQ75R016M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb49b2bf6650
AIMDQ75R016M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 750V PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55.8A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 12.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.98 EUR
10+19.2 EUR
100+18.13 EUR
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CHL8328-04CRT IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
CHL8328-04CRT
Hersteller: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
Produkt ist nicht verfügbar
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IGB08N120S7ATMA1 Infineon-IGB08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917ea612393266
IGB08N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
Produkt ist nicht verfügbar
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IGB08N120S7ATMA1 Infineon-IGB08N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917ea612393266
IGB08N120S7ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 20A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 87 W
auf Bestellung 892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
10+3.17 EUR
100+2.2 EUR
500+1.88 EUR
Mindestbestellmenge: 4
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IRG6B330UDPBF irg6b330udpbf.pdf?fileId=5546d462533600a40153564cc78e2387
IRG6B330UDPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 330V 70A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.76V @ 15V, 120A
Supplier Device Package: TO-220AB
IGBT Type: Trench
Td (on/off) @ 25°C: 47ns/176ns
Test Condition: 196V, 25A, 10Ohm
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 160 W
Produkt ist nicht verfügbar
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IKWH50N75EH7XKSA1 infineon-ikwh50n75eh7-datasheet-en.pdf
IKWH50N75EH7XKSA1
Hersteller: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.98 EUR
10+6.01 EUR
Mindestbestellmenge: 2
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IPB085N15NM6ATMA1 DS_IPB085N15NM6_en.pdf
IPB085N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
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IPB085N15NM6ATMA1 DS_IPB085N15NM6_en.pdf
IPB085N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 32A, 15V
Power Dissipation (Max): 3.8W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 73µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 75 V
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+2.97 EUR
100+2.06 EUR
Mindestbestellmenge: 4
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TC4D9XP20MF500MCABKXUMA1
TC4D9XP20MF500MCABKXUMA1
Hersteller: Infineon Technologies
Description: AURIX 3G-ACEE
Packaging: Cut Tape (CT)
Package / Case: 672-FBGA
Mounting Type: Surface Mount
Speed: 500MHz
Program Memory Size: 20MB (20M x 8)
RAM Size: 10M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 64 SAR
Core Size: 32-Bit12
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: CANbus, C2Slb, I2C, SCI, SPI
Supplier Device Package: PG-F2HBGA-436
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+170.77 EUR
10+143.53 EUR
25+136.73 EUR
100+129.26 EUR
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CY7C1318KV18-250BZI download
CY7C1318KV18-250BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYUSB2315BF104AXIXQMA1
CYUSB2315BF104AXIXQMA1
Hersteller: Infineon Technologies
Description: CYUSB2315BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
auf Bestellung 608 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.35 EUR
10+17.68 EUR
25+16.51 EUR
100+15.23 EUR
348+14.43 EUR
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CYUSB2316BF104AXIXQMA1
CYUSB2316BF104AXIXQMA1
Hersteller: Infineon Technologies
Description: CYUSB2316BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.75 EUR
10+20.45 EUR
25+19.13 EUR
100+17.68 EUR
348+16.77 EUR
696+16.39 EUR
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CYUSB2317BF104AXIXQMA1
CYUSB2317BF104AXIXQMA1
Hersteller: Infineon Technologies
Description: CYUSB2317BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.21 EUR
10+21.65 EUR
25+20.26 EUR
100+18.74 EUR
348+17.79 EUR
696+17.39 EUR
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CYUSB2318BF104AXIXQMA1
CYUSB2318BF104AXIXQMA1
Hersteller: Infineon Technologies
Description: CYUSB2318BF104AXIXQMA1
Packaging: Tray
Package / Case: 104-VFLGA Exposed Pad
Function: Controller
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 3.63V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 104-LGA (8x8)
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.65 EUR
10+22.85 EUR
25+21.39 EUR
100+19.8 EUR
348+18.81 EUR
696+18.39 EUR
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BGA6L1BN6E6327XTSA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC RF AMP TSNP-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF540ZLPBF irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6
IRF540ZLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 17445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
306+1.47 EUR
Mindestbestellmenge: 306
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ISC008N06LM6ATMA1 infineon-isc008n06lm6-datasheet-en.pdf
ISC008N06LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
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EVALAUDIOMA2304DNSBTOBO1 Infineon-Evaluation_board_EVAL_AUDIO_MA2304DNS_B_and_EVAL_AUDIO_MA2304PNS_B-UserManual-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d01894e562c0a37a9
EVALAUDIOMA2304DNSBTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA2304DNS
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: 10V ~ 20V
Max Output Power x Channels @ Load: 37W x 2 @ 4Ohm
Utilized IC / Part: MA2304DNS
auf Bestellung 3 Stücke:
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Anzahl Preis
1+402.27 EUR
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KITPSE84EVALTOBO1 infineon-psoc-edge-e84-evaluation-kit-product-brief.pdf
KITPSE84EVALTOBO1
Hersteller: Infineon Technologies
Description: PSOC EDGE E84 EVAL KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, Accessories
Core Processor: ARM® Cortex®-M33, Cortex®-M55
Utilized IC / Part: PSE846GPS2DBZC4
auf Bestellung 3 Stücke:
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Anzahl Preis
1+557.06 EUR
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TLE493DW3B6B1HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B1HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
8+2.47 EUR
10+2.35 EUR
25+2.21 EUR
50+2.12 EUR
100+2.03 EUR
500+1.85 EUR
1000+1.79 EUR
Mindestbestellmenge: 7
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TLE493DW3B6B2HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B2HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE493DW3B6B3HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B3HTSA1
Hersteller: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
8+2.47 EUR
10+2.35 EUR
25+2.21 EUR
50+2.12 EUR
100+2.03 EUR
500+1.85 EUR
1000+1.79 EUR
Mindestbestellmenge: 7
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IPAW60R360P7SXKSA1 infineon-ipaw60r360p7s-datasheet-en.pdf
IPAW60R360P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
390+1.17 EUR
Mindestbestellmenge: 390
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REF65WHFZVSLPPAG2TOBO1 infineon-65-w-atq-gan-usb-pd-dual-c-power-charger-and-adaptor-solution-demo-board-ref-65w-2c-gan-pag1-test-report-usermanual-en.pdf
REF65WHFZVSLPPAG2TOBO1
Hersteller: Infineon Technologies
Description: OTHERS-WCS
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CYPAP212A1-14SXI
Embedded: No
Produkt ist nicht verfügbar
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