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PTF141501E V1 PTF141501E V1 Infineon Technologies PTF141501E.pdf Description: RF MOSFET LDMOS 28V H-30260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.5GHz
Power - Output: 150W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-30260-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.5 A
Produkt ist nicht verfügbar
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CY95F128DPMC-GE1 CY95F128DPMC-GE1 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.3V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY95F633KPMC-G-SNE2 CY95F633KPMC-G-SNE2 Infineon Technologies Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration- Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY95F633KNPMC-G-UNE2 CY95F633KNPMC-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
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MB95F128JBPMC-G-JNE1 MB95F128JBPMC-G-JNE1 Infineon Technologies Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
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CY95F128NBPMC-GSE2 CY95F128NBPMC-GSE2 Infineon Technologies Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
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IRG4BC20SD-SPBF IRG4BC20SD-SPBF Infineon Technologies irg4bc20sd-spbf.pdf?fileId=5546d462533600a40153563f66942261 Description: IGBT 600V 19A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 62ns/690ns
Switching Energy: 320µJ (on), 2.58mJ (off)
Test Condition: 480V, 10A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 38 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20UDSTRRP IRG4BC20UDSTRRP Infineon Technologies irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267 Description: IGBT 600V 13A 60W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
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IRG4PC30FPBF IRG4PC30FPBF Infineon Technologies irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2 Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG4PC30KPBF IRG4PC30KPBF Infineon Technologies irg4pc30kpbf.pdf?fileId=5546d462533600a401535643d3a122c6 Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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CYW55901IUBGTXTMA1 Infineon Technologies Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPD03N60C3BTMA1 SPD03N60C3BTMA1 Infineon Technologies SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: MOSFET N-CH 650V 3.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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100+1.23 EUR
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TLE7183FXUMA8 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-14
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
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TLE7183FXUMA9 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-14
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183FXUMB1 Infineon Technologies Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4 Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-14
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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CY8C6244AZI-S4D83 CY8C6244AZI-S4D83 Infineon Technologies Infineon-PSoC_6_MCU_CY8C62X4-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd026d585901 Description: IC MCU 32BIT 256KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Number of I/O: 62
DigiKey Programmable: Not Verified
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TLE4284DV50NTMA1 TLE4284DV50NTMA1 Infineon Technologies Infineon-TLE4284-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc101595f854dfc1f60 Description: IC REG LIN 5V 1A PG-TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IM12S90EA2XKMA1 Infineon Technologies infineon-im12s90ea2-datasheet-en.pdf Description: MOSFET IPM 1.2KV 17.6A 24-PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 17.6 A
Voltage: 1.2 kV
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IM12S60EA2XKMA1 Infineon Technologies infineon-im12s60ea2-datasheet-en.pdf Description: MOSFET IPM 1.2KV 25A 24-PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
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CY8CTST200-16LGXI CY8CTST200-16LGXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 32K FLASH 16-QFN
Packaging: Tray
Package / Case: 16-VFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
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100+3.94 EUR
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CY8CTST200-24LQXI CY8CTST200-24LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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CY8CTST200A-48PVXI CY8CTST200A-48PVXI Infineon Technologies Description: IC MCU PSOC SINGLE-TOUCH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
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10+6.19 EUR
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120+5.13 EUR
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NBT2000A8K0T4 SHLD V1 NBT2000A8K0T4 SHLD V1 Infineon Technologies Infineon-OPTIGA_Authenticate_NBT_DevShield_UserGuide-UserManual-v01_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5f5a94f89 Description: OPTIGA Authenticate NBT Develop
Packaging: Box
Produkt ist nicht verfügbar
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NBT2000A8K0T4KITV1TOBO1 Infineon Technologies Description: NBT2000A8K0T4 KIT V1
Packaging: Bulk
Function: Security Keypad (MCU Based)
Type: Reference Design
Contents: Board(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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T2001N36TOFXPSA1 T2001N36TOFXPSA1 Infineon Technologies Infineon-T2001N-DS-v07_00-en_de.pdf?fileId=db3a304412b407950112b430da905218 Description: SCR MODULE 3.6KV 29900A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1900 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 29900 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
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CY8CTST200A-24LQXI CY8CTST200A-24LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU PSOC SINGLE-TOUCH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
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CY8CTST200A-32LQXI CY8CTST200A-32LQXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU PSOC SINGLE-TOUCH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
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TDA38640A0100AUMA1 Infineon Technologies Description: IFX POL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB095N20NM6ATMA1 IPB095N20NM6ATMA1 Infineon Technologies Infineon-IPB095N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019626da994e6141 Description: IPB095N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 186µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
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IPB095N20NM6ATMA1 IPB095N20NM6ATMA1 Infineon Technologies Infineon-IPB095N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019626da994e6141 Description: IPB095N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 186µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
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BB 664 H7902 BB 664 H7902 Infineon Technologies INFNS15423-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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IMSQ120R012M2HHXUMA1 IMSQ120R012M2HHXUMA1 Infineon Technologies DS_IMSQ120R012M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
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IMSQ120R012M2HHXUMA1 IMSQ120R012M2HHXUMA1 Infineon Technologies DS_IMSQ120R012M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
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CY8C4147AXIT473XQMA1 CY8C4147AXIT473XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
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IRF7469PBF IRF7469PBF Infineon Technologies irf7469pbf.pdf?fileId=5546d462533600a4015355ff18861c12 Description: MOSFET N-CH 40V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Produkt ist nicht verfügbar
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S25HS02GTDPBHV053 S25HS02GTDPBHV053 Infineon Technologies infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral Description: IC FLASH 2GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZN10S7N078ATMA1 IAUZN10S7N078ATMA1 Infineon Technologies infineon-iauzn10s7n078-datasheet-en.pdf Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
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IAUZN10S7N078ATMA1 IAUZN10S7N078ATMA1 Infineon Technologies infineon-iauzn10s7n078-datasheet-en.pdf Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
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CY8C4146AXIT403XQMA1 CY8C4146AXIT403XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4146AXIT413XQMA1 CY8C4146AXIT413XQMA1 Infineon Technologies Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698 Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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IRS2336DJPBF IRS2336DJPBF Infineon Technologies Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54 Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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AUIRLU024Z AUIRLU024Z Infineon Technologies AUIRLR%2CU024Z.pdf Description: MOSFET N-CH 55V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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S25FL128SDPBHB210 S25FL128SDPBHB210 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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ICE5AR4770AG1XUMA1 ICE5AR4770AG1XUMA1 Infineon Technologies Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37 Description: COOLSET
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
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ICE5AR4770AG1XUMA1 ICE5AR4770AG1XUMA1 Infineon Technologies Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37 Description: COOLSET
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
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IRS21281PBF IRS21281PBF Infineon Technologies irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0 Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFHS8242TRPBF IRFHS8242TRPBF Infineon Technologies irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
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IRFHS8242TRPBF IRFHS8242TRPBF Infineon Technologies irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
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ESD188B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f Description: ESD188B1W0201E6327XTSA1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
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ESD188B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f Description: ESD188B1W0201E6327XTSA1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
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2000+0.071 EUR
5000+0.061 EUR
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PVI5050NPBF PVI5050NPBF Infineon Technologies Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Number of Channels: 1
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S6E2CC8JFAGB1000A S6E2CC8JFAGB1000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2CCAJFAGB1000A S6E2CCAJFAGB1000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 192BGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF4104S AUIRF4104S Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
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AUIRF4104STRL AUIRF4104STRL Infineon Technologies IRSDS10905-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
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CY8C4045LQIT441XQSA1 Infineon Technologies Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: HMI-GROWTH PSOC4
Packaging: Tray
Produkt ist nicht verfügbar
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IPB80N06S2H5ATMA2 IPB80N06S2H5ATMA2 Infineon Technologies Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333c6c5ac2&ack=t Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 289 Stücke:
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64-2137PBF Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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IPP083N10N5XKSA1 IPP083N10N5XKSA1 Infineon Technologies Infineon-IPP083N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
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50+1.85 EUR
100+1.66 EUR
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SPA21N50C3XKSA1 SPA21N50C3XKSA1 Infineon Technologies SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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PTF141501E V1 PTF141501E.pdf
PTF141501E V1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-30260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.5GHz
Power - Output: 150W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-30260-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 1.5 A
Produkt ist nicht verfügbar
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CY95F128DPMC-GE1 download
CY95F128DPMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.3V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY95F633KPMC-G-SNE2 Infineon-CY95630H_Series_New_8FX_8-bit_Microcontrollers-AdditionalTechnicalInformation-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edd859f61fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-
CY95F633KPMC-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY95F633KNPMC-G-UNE2
CY95F633KNPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 12KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 12KB (12K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 29
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F128JBPMC-G-JNE1
MB95F128JBPMC-G-JNE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
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CY95F128NBPMC-GSE2
CY95F128NBPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 60KB (60K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 105°C
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 87
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG4BC20SD-SPBF irg4bc20sd-spbf.pdf?fileId=5546d462533600a40153563f66942261
IRG4BC20SD-SPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 19A 60W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 62ns/690ns
Switching Energy: 320µJ (on), 2.58mJ (off)
Test Condition: 480V, 10A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 38 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4BC20UDSTRRP irg4bc20ud-spbf.pdf?fileId=5546d462533600a40153563f7f112267
IRG4BC20UDSTRRP
Hersteller: Infineon Technologies
Description: IGBT 600V 13A 60W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 39ns/93ns
Switching Energy: 160µJ (on), 130µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 60 W
Produkt ist nicht verfügbar
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IRG4PC30FPBF irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2
IRG4PC30FPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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IRG4PC30KPBF irg4pc30kpbf.pdf?fileId=5546d462533600a401535643d3a122c6
IRG4PC30KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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CYW55901IUBGTXTMA1
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPD03N60C3BTMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPD03N60C3BTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 302 Stücke:
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Anzahl Preis
7+2.85 EUR
10+1.82 EUR
100+1.23 EUR
Mindestbestellmenge: 7
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TLE7183FXUMA8 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-14
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183FXUMA9 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-14
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183FXUMB1 Infineon-TLE7183F-DS-v02_02-EN.pdf?fileId=db3a304412b407950112b43971646df4
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-VQFN-48-14
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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CY8C6244AZI-S4D83 Infineon-PSoC_6_MCU_CY8C62X4-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd026d585901
CY8C6244AZI-S4D83
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 80TQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR, 10b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, LINbus, QSPI, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 80-TQFP (12x12)
Number of I/O: 62
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4284DV50NTMA1 Infineon-TLE4284-DS-v02_10-EN.pdf?fileId=5546d46258fc0bc101595f854dfc1f60
TLE4284DV50NTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 1A PG-TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 1.6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IM12S90EA2XKMA1 infineon-im12s90ea2-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: MOSFET IPM 1.2KV 17.6A 24-PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 17.6 A
Voltage: 1.2 kV
auf Bestellung 267 Stücke:
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Anzahl Preis
1+60.33 EUR
14+43.41 EUR
112+40.74 EUR
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IM12S60EA2XKMA1 infineon-im12s60ea2-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: MOSFET IPM 1.2KV 25A 24-PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
auf Bestellung 265 Stücke:
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Anzahl Preis
1+68.01 EUR
14+49.33 EUR
112+47.26 EUR
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CY8CTST200-16LGXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTST200-16LGXI
Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 16-QFN
Packaging: Tray
Package / Case: 16-VFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.27 EUR
10+4.74 EUR
25+4.36 EUR
100+3.94 EUR
Mindestbestellmenge: 3
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CY8CTST200-24LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTST200-24LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+5 EUR
25+4.61 EUR
100+4.17 EUR
Mindestbestellmenge: 3
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CY8CTST200A-48PVXI
CY8CTST200A-48PVXI
Hersteller: Infineon Technologies
Description: IC MCU PSOC SINGLE-TOUCH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.1 EUR
10+6.19 EUR
30+5.63 EUR
120+5.13 EUR
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NBT2000A8K0T4 SHLD V1 Infineon-OPTIGA_Authenticate_NBT_DevShield_UserGuide-UserManual-v01_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5f5a94f89
NBT2000A8K0T4 SHLD V1
Hersteller: Infineon Technologies
Description: OPTIGA Authenticate NBT Develop
Packaging: Box
Produkt ist nicht verfügbar
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NBT2000A8K0T4KITV1TOBO1
Hersteller: Infineon Technologies
Description: NBT2000A8K0T4 KIT V1
Packaging: Bulk
Function: Security Keypad (MCU Based)
Type: Reference Design
Contents: Board(s)
Embedded: Yes, MCU
Produkt ist nicht verfügbar
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T2001N36TOFXPSA1 Infineon-T2001N-DS-v07_00-en_de.pdf?fileId=db3a304412b407950112b430da905218
T2001N36TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 3.6KV 29900A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1900 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 29900 A
Voltage - Off State: 3.6 kV
Produkt ist nicht verfügbar
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CY8CTST200A-24LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTST200A-24LQXI
Hersteller: Infineon Technologies
Description: IC MCU PSOC SINGLE-TOUCH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 20
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8CTST200A-32LQXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTST200A-32LQXI
Hersteller: Infineon Technologies
Description: IC MCU PSOC SINGLE-TOUCH 32QFN
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TDA38640A0100AUMA1
Hersteller: Infineon Technologies
Description: IFX POL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB095N20NM6ATMA1 Infineon-IPB095N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019626da994e6141
IPB095N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPB095N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 186µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Produkt ist nicht verfügbar
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IPB095N20NM6ATMA1 Infineon-IPB095N20NM6-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019626da994e6141
IPB095N20NM6ATMA1
Hersteller: Infineon Technologies
Description: IPB095N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 186µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
auf Bestellung 506 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.17 EUR
10+6.14 EUR
100+4.42 EUR
500+4.37 EUR
Mindestbestellmenge: 2
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BB 664 H7902 INFNS15423-1.pdf?t.download=true&u=5oefqw
BB 664 H7902
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Bulk
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
auf Bestellung 4750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4724+0.091 EUR
Mindestbestellmenge: 4724
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IMSQ120R012M2HHXUMA1 DS_IMSQ120R012M2HH_v1.00_en.pdf
IMSQ120R012M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
Produkt ist nicht verfügbar
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IMSQ120R012M2HHXUMA1 DS_IMSQ120R012M2HH_v1.00_en.pdf
IMSQ120R012M2HHXUMA1
Hersteller: Infineon Technologies
Description: SICFET 2N-CH 1200V 121A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 758W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 121A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4050pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-HDSOP-16-221
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.65 EUR
10+51.24 EUR
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CY8C4147AXIT473XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4147AXIT473XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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IRF7469PBF irf7469pbf.pdf?fileId=5546d462533600a4015355ff18861c12
IRF7469PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Produkt ist nicht verfügbar
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S25HS02GTDPBHV053 infineon-s25hs02gt-s25hs04gt-s25hl02gt-s25hl04gt-2-gb-ddp4-gb-qdp-semper-flash-with-quad-spi-1-8-v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ee8d76471ad&utm_source=cypress&utm_medium=referral
S25HS02GTDPBHV053
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (8x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IAUZN10S7N078ATMA1 infineon-iauzn10s7n078-datasheet-en.pdf
IAUZN10S7N078ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
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IAUZN10S7N078ATMA1 infineon-iauzn10s7n078-datasheet-en.pdf
IAUZN10S7N078ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.1 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.09 EUR
Mindestbestellmenge: 6
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CY8C4146AXIT403XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AXIT403XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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CY8C4146AXIT413XQMA1 Infineon-PSOC_4100T_Plus_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c95d1335f0195fefe3f9e6698
CY8C4146AXIT413XQMA1
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 44-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 34
Produkt ist nicht verfügbar
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IRS2336DJPBF Infineon-IRS2336x-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a4e52d2c70c54
IRS2336DJPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRLU024Z AUIRLR%2CU024Z.pdf
AUIRLU024Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 16A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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S25FL128SDPBHB210 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDPBHB210
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ICE5AR4770AG1XUMA1 Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37
ICE5AR4770AG1XUMA1
Hersteller: Infineon Technologies
Description: COOLSET
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
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ICE5AR4770AG1XUMA1 Infineon-GEN5_PLUS_FF_DSO12_ICE5xRxxxxAG-1-DS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c956a0a470195a45e85d64e37
ICE5AR4770AG1XUMA1
Hersteller: Infineon Technologies
Description: COOLSET
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Either
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DSO-12-24
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Produkt ist nicht verfügbar
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IRS21281PBF irs2127pbf.pdf?fileId=5546d462533600a4015356768e7a27c0
IRS21281PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFHS8242TRPBF irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d
IRFHS8242TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.28 EUR
Mindestbestellmenge: 4000
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IRFHS8242TRPBF irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d
IRFHS8242TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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ESD188B1W0201E6327XTSA1 Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f
Hersteller: Infineon Technologies
Description: ESD188B1W0201E6327XTSA1
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD188B1W0201E6327XTSA1 Infineon-ESD188-B1-W0201%20E6327-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b019541d7f7a2053f
Hersteller: Infineon Technologies
Description: ESD188B1W0201E6327XTSA1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: USB
Capacitance @ Frequency: 0.06pF @ 12.8GHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 1V (Max)
Supplier Device Package: SG-WLL-2-11
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 4.5V (Typ)
Power - Peak Pulse: 22.5W
Power Line Protection: No
auf Bestellung 12002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
87+0.2 EUR
142+0.12 EUR
500+0.091 EUR
1000+0.08 EUR
2000+0.071 EUR
5000+0.061 EUR
Mindestbestellmenge: 53
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PVI5050NPBF Infineon-PVI1050N-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI5050NPBF
Hersteller: Infineon Technologies
Description: OPTOISO 4KV PHVOLT 8DIP MODIFIED
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 4000Vrms
Supplier Device Package: 8-DIP Modified
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
Number of Channels: 1
Produkt ist nicht verfügbar
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S6E2CC8JFAGB1000A download
S6E2CC8JFAGB1000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2CCAJFAGB1000A download
S6E2CCAJFAGB1000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 192BGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRF4104S IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF4104STRL IRSDS10905-1.pdf?t.download=true&u=5oefqw
AUIRF4104STRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY8C4045LQIT441XQSA1 Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Produkt ist nicht verfügbar
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IPB80N06S2H5ATMA2 Infineon-IPP_B80N06S2_H5-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4333c6c5ac2&ack=t
IPB80N06S2H5ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 230µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
154+2.96 EUR
Mindestbestellmenge: 154
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64-2137PBF fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 106A D2PAK
Packaging: Tube
Produkt ist nicht verfügbar
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IPP083N10N5XKSA1 Infineon-IPP083N10N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014ac56a3779202b
IPP083N10N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
50+1.85 EUR
100+1.66 EUR
Mindestbestellmenge: 5
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SPA21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
SPA21N50C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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