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IGLT65R055B2AUMA1 IGLT65R055B2AUMA1 Infineon Technologies Infineon-IGLT65R055B2_PDS-DataSheet-v00_02-EN.pdf?fileId=8ac78c8c93dda25b0195477557591d01 Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R055B2AUMA1 IGLT65R055B2AUMA1 Infineon Technologies Infineon-IGLT65R055B2_PDS-DataSheet-v00_02-EN.pdf?fileId=8ac78c8c93dda25b0195477557591d01 Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
auf Bestellung 570 Stücke:
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2+16.88 EUR
10+11.68 EUR
100+9.82 EUR
Mindestbestellmenge: 2
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IRS9103AXTSA1 IRS9103AXTSA1 Infineon Technologies Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3 Description: IRS9103AXTSA1
Packaging: Tape & Reel (TR)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRS9103AXTSA1 IRS9103AXTSA1 Infineon Technologies Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3 Description: IRS9103AXTSA1
Packaging: Cut Tape (CT)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
auf Bestellung 700 Stücke:
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3+8.13 EUR
10+6.21 EUR
25+5.73 EUR
100+5.2 EUR
250+4.95 EUR
500+4.79 EUR
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BCP51H6327XTSA1 BCP51H6327XTSA1 Infineon Technologies Infineon-BCP51_BCP52_BCP53-DS-v01_01-en.pdf?fileId=db3a304314dca38901156ad4194521c9 Description: TRANS PNP 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
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PVA3054NPBF PVA3054NPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 50 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
auf Bestellung 759 Stücke:
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2+10.89 EUR
10+9.71 EUR
25+9.27 EUR
50+8.96 EUR
100+8.65 EUR
250+8.26 EUR
500+7.97 EUR
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IMT44R025M2HXTMA2 IMT44R025M2HXTMA2 Infineon Technologies infineon-imt44r025m2h-datasheet-en.pdf Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IMT44R025M2HXTMA2 IMT44R025M2HXTMA2 Infineon Technologies infineon-imt44r025m2h-datasheet-en.pdf Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IRLR3802PBF IRLR3802PBF Infineon Technologies IRSDS11016-1.pdf?t.download=true&u=5oefqw Description: IRLR3802 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
auf Bestellung 2596 Stücke:
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429+1.06 EUR
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EVALTDA3880618VOUTTOBO1 EVALTDA3880618VOUTTOBO1 Infineon Technologies Infineon-Evalaution_board_TDA38806_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3b887585f05 Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
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1+89.34 EUR
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EVALTDA388065VOUTTOBO1 EVALTDA388065VOUTTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_TDA38807_5Vout-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231e79c90cfe Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
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1+89.34 EUR
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EVALTDA3880633VOUTTOBO1 EVALTDA3880633VOUTTOBO1 Infineon Technologies Infineon-TDA38806-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190ba4e6fe45b05 Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
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1+89.34 EUR
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IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
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99+4.54 EUR
Mindestbestellmenge: 99
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IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1168V18-375BZC CY7C1168V18-375BZC Infineon Technologies Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1168V18-400BZC CY7C1168V18-400BZC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC357TA64F300SABKXUMA2 TC357TA64F300SABKXUMA2 Infineon Technologies 4_cip10528.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+58.38 EUR
10+47.55 EUR
25+44.85 EUR
100+41.87 EUR
250+40.46 EUR
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CY8CLED08-48LFXI CY8CLED08-48LFXI Infineon Technologies CY8CLED08.pdf Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 44
DigiKey Programmable: Not Verified
auf Bestellung 1033 Stücke:
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1+21.63 EUR
10+17.07 EUR
25+15.93 EUR
100+14.68 EUR
260+14.06 EUR
520+13.71 EUR
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IRS21864PBF IRS21864PBF Infineon Technologies irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
auf Bestellung 813 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.02 EUR
10+4.55 EUR
25+4.18 EUR
100+3.78 EUR
250+3.58 EUR
500+3.47 EUR
Mindestbestellmenge: 3
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IRFZ44VZPBF IRFZ44VZPBF Infineon Technologies IRSDS11304-1.pdf?t.download=true&u=5oefqw Description: IRFZ44 - 12V-300V N-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 173 Stücke:
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173+2.58 EUR
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EVALISO4DIR1400HTOBO1 EVALISO4DIR1400HTOBO1 Infineon Technologies Infineon-Digital_Isolators_EVAL_ISO_4DIR1400H-UserManual-v01_00-EN.pdf Description: EVAL BOARD FOR 4DIR1400H
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: 4DIR1400H
Primary Attributes: 4-Channel (Quad)
Embedded: No
auf Bestellung 10 Stücke:
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1+81.73 EUR
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CYW89570BFFBGTXUMA1 Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2117PBF IR2117PBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 1454 Stücke:
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4+5.1 EUR
10+3.84 EUR
50+3.33 EUR
100+3.17 EUR
250+3 EUR
500+2.9 EUR
1000+2.82 EUR
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EVALTDA38740A33VOUTTOBO1 Infineon Technologies infineon-evaluation-board-eval-tda38740a-xxvout-usermanual-en.pdf Description: EVALTDA38740A33VOUTTOBO1
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 17V
Current - Output: 40A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38740A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
auf Bestellung 3 Stücke:
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1+110.97 EUR
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S29GL256S11TFV020 S29GL256S11TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPI11N60C3XKSA1 SPI11N60C3XKSA1 Infineon Technologies SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Description: MOSFET N-CH 650V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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CY62167EV30LL-45BVIT CY62167EV30LL-45BVIT Infineon Technologies Infineon-CY62167EV30_MoBL_16-Mbit_(1M_x_16_2M_x_8)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe4ea831c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167EV30LL-45BVIT CY62167EV30LL-45BVIT Infineon Technologies Infineon-CY62167EV30_MoBL_16-Mbit_(1M_x_16_2M_x_8)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe4ea831c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1975 Stücke:
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CY62167G30-45BVXIT CY62167G30-45BVXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167GE30-45BV1XIT CY62167GE30-45BV1XIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167G-45ZXIT CY62167G-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167GE30-45ZXIT CY62167GE30-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY62167GE-45ZXIT CY62167GE-45ZXIT Infineon Technologies Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral& Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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CY7C199CN-20ZXI CY7C199CN-20ZXI Infineon Technologies CY7C199CN.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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IR2106PBF IR2106PBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CYBL11172-56LQXI CYBL11172-56LQXI Infineon Technologies CYBL1xx7x_RevK_3-27-17.pdf Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
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FF2000UXTR23T2M1BPSA1 FF2000UXTR23T2M1BPSA1 Infineon Technologies Description: FF2000UXTR23T2M1BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 710A
Input Capacitance (Ciss) (Max) @ Vds: 95000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 1kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 2.65µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 450mA
Supplier Device Package: AG-XHP2K17
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FF2000UXTR23T2M1PBPSA1 FF2000UXTR23T2M1PBPSA1 Infineon Technologies Description: FF2000UXTR23T2M1PBPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 675A
Input Capacitance (Ciss) (Max) @ Vds: 95000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 1kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 2.65µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 450mA
Supplier Device Package: AG-XHP2K17
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FF1300UXTR23T2M1BPSA1 Infineon Technologies infineon-ff1300uxtr23t2m1-datasheet-en.pdf Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.07kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 143000pF @ 1500V
Rds On (Max) @ Id, Vgs: 1.59mOhm @ 1.5kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 3980nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 675mA
Supplier Device Package: AG-XHP2K17
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FF1000UXTR23T2M1BPSA1 Infineon Technologies infineon-ff1000uxtr23t2m1-datasheet-en.pdf Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.33kA
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5300nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K17
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FF1000UXTR23T2M1B5BPSA1 Infineon Technologies infineon-ff1000uxtr23t2m1-b5-datasheet-en.pdf Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.335kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5.3µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K33
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FF1300UXTR23T2M1PBPSA1 FF1300UXTR23T2M1PBPSA1 Infineon Technologies infineon-ff1300uxtr23t2m1-datasheet-en.pdf Description: FF1300UXTR23T2M1PBPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1000A
Input Capacitance (Ciss) (Max) @ Vds: 143000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.59mOhm @ 1.5kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 3.98µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 675mA
Supplier Device Package: AG-XHP2K17
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FF1000UXTR23T2M1PBPSA1 FF1000UXTR23T2M1PBPSA1 Infineon Technologies infineon-ff1000uxtr23t2m1-datasheet-en.pdf Description: FF1000UXTR23T2M1PBPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.185kA
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5.3µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K17
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AUIRFZ34N AUIRFZ34N Infineon Technologies AUIRFZ34N.pdf Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S7N030ATMA1 IAUCN04S7N030ATMA1 Infineon Technologies Infineon-IAUCN04S7N030-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ec8b9c1a48 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
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IAUCN04S7N030ATMA1 IAUCN04S7N030ATMA1 Infineon Technologies Infineon-IAUCN04S7N030-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ec8b9c1a48 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
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9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
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IAUCN04S7N015ATMA1 IAUCN04S7N015ATMA1 Infineon Technologies Infineon-IAUCN04S7N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc37831f49 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
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IAUCN04S7N015ATMA1 IAUCN04S7N015ATMA1 Infineon Technologies Infineon-IAUCN04S7N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc37831f49 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
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8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.74 EUR
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IAUCN04S7L014ATMA1 IAUCN04S7L014ATMA1 Infineon Technologies Infineon-IAUCN04S7L014-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecded01a60 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L014ATMA1 IAUCN04S7L014ATMA1 Infineon Technologies Infineon-IAUCN04S7L014-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecded01a60 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
auf Bestellung 4518 Stücke:
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8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.74 EUR
Mindestbestellmenge: 8
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FF1400R23T2E7B5BPSA1 Infineon Technologies Description: FF1400R23T2E7B5BPSA1
Packaging: Box
auf Bestellung 6 Stücke:
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1+2003.53 EUR
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AUIRLZ44ZL AUIRLZ44ZL Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C1373D-100AXC CY7C1373D-100AXC Infineon Technologies ?docID=47296 Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1371D-100AXC CY7C1371D-100AXC Infineon Technologies ?docID=47296 Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1371D-100AXI CY7C1371D-100AXI Infineon Technologies ?docID=47296 Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1383D-100AXC CY7C1383D-100AXC Infineon Technologies CY7C1381%2C83%28D%2CF%29%20RevF.pdf Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLR2905ZTRLPBF IRLR2905ZTRLPBF Infineon Technologies irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRLR3114Z AUIRLR3114Z Infineon Technologies auirlr3114z.pdf?fileId=5546d462533600a4015355be8fa61579 Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFZ44VZPBF IRFZ44VZPBF Infineon Technologies irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219 Description: MOSFET N-CH 60V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
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IGI60L5050B1MXUMA1 Infineon Technologies infineon-igi60l5050b1m-datasheet-en.pdf Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
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IGLT65R055B2AUMA1 Infineon-IGLT65R055B2_PDS-DataSheet-v00_02-EN.pdf?fileId=8ac78c8c93dda25b0195477557591d01
IGLT65R055B2AUMA1
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
Produkt ist nicht verfügbar
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IGLT65R055B2AUMA1 Infineon-IGLT65R055B2_PDS-DataSheet-v00_02-EN.pdf?fileId=8ac78c8c93dda25b0195477557591d01
IGLT65R055B2AUMA1
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.88 EUR
10+11.68 EUR
100+9.82 EUR
Mindestbestellmenge: 2
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IRS9103AXTSA1 Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3
IRS9103AXTSA1
Hersteller: Infineon Technologies
Description: IRS9103AXTSA1
Packaging: Tape & Reel (TR)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IRS9103AXTSA1 Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3
IRS9103AXTSA1
Hersteller: Infineon Technologies
Description: IRS9103AXTSA1
Packaging: Cut Tape (CT)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.13 EUR
10+6.21 EUR
25+5.73 EUR
100+5.2 EUR
250+4.95 EUR
500+4.79 EUR
Mindestbestellmenge: 3
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BCP51H6327XTSA1 Infineon-BCP51_BCP52_BCP53-DS-v01_01-en.pdf?fileId=db3a304314dca38901156ad4194521c9
BCP51H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1771+0.26 EUR
Mindestbestellmenge: 1771
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PVA3054NPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 50 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
auf Bestellung 759 Stücke:
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Anzahl Preis
2+10.89 EUR
10+9.71 EUR
25+9.27 EUR
50+8.96 EUR
100+8.65 EUR
250+8.26 EUR
500+7.97 EUR
Mindestbestellmenge: 2
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IMT44R025M2HXTMA2 infineon-imt44r025m2h-datasheet-en.pdf
IMT44R025M2HXTMA2
Hersteller: Infineon Technologies
Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IMT44R025M2HXTMA2 infineon-imt44r025m2h-datasheet-en.pdf
IMT44R025M2HXTMA2
Hersteller: Infineon Technologies
Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
Produkt ist nicht verfügbar
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IRLR3802PBF IRSDS11016-1.pdf?t.download=true&u=5oefqw
IRLR3802PBF
Hersteller: Infineon Technologies
Description: IRLR3802 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
auf Bestellung 2596 Stücke:
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Anzahl Preis
429+1.06 EUR
Mindestbestellmenge: 429
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EVALTDA3880618VOUTTOBO1 Infineon-Evalaution_board_TDA38806_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3b887585f05
EVALTDA3880618VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
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Anzahl Preis
1+89.34 EUR
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EVALTDA388065VOUTTOBO1 Infineon-Evaluation_board_EVAL_TDA38807_5Vout-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231e79c90cfe
EVALTDA388065VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+89.34 EUR
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EVALTDA3880633VOUTTOBO1 Infineon-TDA38806-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190ba4e6fe45b05
EVALTDA3880633VOUTTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+89.34 EUR
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IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
99+4.54 EUR
Mindestbestellmenge: 99
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IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1168V18-375BZC
CY7C1168V18-375BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1168V18-400BZC
CY7C1168V18-400BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC357TA64F300SABKXUMA2 4_cip10528.pdf
TC357TA64F300SABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+58.38 EUR
10+47.55 EUR
25+44.85 EUR
100+41.87 EUR
250+40.46 EUR
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CY8CLED08-48LFXI CY8CLED08.pdf
CY8CLED08-48LFXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 44
DigiKey Programmable: Not Verified
auf Bestellung 1033 Stücke:
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Anzahl Preis
1+21.63 EUR
10+17.07 EUR
25+15.93 EUR
100+14.68 EUR
260+14.06 EUR
520+13.71 EUR
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IRS21864PBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS21864PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
auf Bestellung 813 Stücke:
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Anzahl Preis
3+6.02 EUR
10+4.55 EUR
25+4.18 EUR
100+3.78 EUR
250+3.58 EUR
500+3.47 EUR
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IRFZ44VZPBF IRSDS11304-1.pdf?t.download=true&u=5oefqw
IRFZ44VZPBF
Hersteller: Infineon Technologies
Description: IRFZ44 - 12V-300V N-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 173 Stücke:
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173+2.58 EUR
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EVALISO4DIR1400HTOBO1 Infineon-Digital_Isolators_EVAL_ISO_4DIR1400H-UserManual-v01_00-EN.pdf
EVALISO4DIR1400HTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 4DIR1400H
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: 4DIR1400H
Primary Attributes: 4-Channel (Quad)
Embedded: No
auf Bestellung 10 Stücke:
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Anzahl Preis
1+81.73 EUR
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CYW89570BFFBGTXUMA1
Hersteller: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2117PBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2117PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 1454 Stücke:
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Anzahl Preis
4+5.1 EUR
10+3.84 EUR
50+3.33 EUR
100+3.17 EUR
250+3 EUR
500+2.9 EUR
1000+2.82 EUR
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EVALTDA38740A33VOUTTOBO1 infineon-evaluation-board-eval-tda38740a-xxvout-usermanual-en.pdf
Hersteller: Infineon Technologies
Description: EVALTDA38740A33VOUTTOBO1
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 17V
Current - Output: 40A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38740A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
auf Bestellung 3 Stücke:
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Anzahl Preis
1+110.97 EUR
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S29GL256S11TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S11TFV020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPI11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPI11N60C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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CY62167EV30LL-45BVIT Infineon-CY62167EV30_MoBL_16-Mbit_(1M_x_16_2M_x_8)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe4ea831c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV30LL-45BVIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167EV30LL-45BVIT Infineon-CY62167EV30_MoBL_16-Mbit_(1M_x_16_2M_x_8)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe4ea831c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV30LL-45BVIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.57 EUR
10+42.18 EUR
25+40.83 EUR
50+39.82 EUR
100+38.83 EUR
250+37.54 EUR
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CY62167G30-45BVXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G30-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167GE30-45BV1XIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE30-45BV1XIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167G-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167G-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167GE30-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE30-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY62167GE-45ZXIT Infineon-CY62167G_CY62167GE_MOBL_16_MBIT_(1M_WORDS_X_16_BIT_2M_WORDS_X_8_BIT)_STATIC_RAM_WITH_ERROR-CORRECTING_CODE_(ECC)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eccbe004700&utm_source=cypress&utm_medium=referral&
CY62167GE-45ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C199CN-20ZXI CY7C199CN.pdf
CY7C199CN-20ZXI
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Tray
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2106PBF description ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR2106PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBL11172-56LQXI CYBL1xx7x_RevK_3-27-17.pdf
CYBL11172-56LQXI
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB Flash, 32kB SRAM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 1.9V ~ 5.5V
Power - Output: 3dBm
Protocol: Bluetooth v4.2
Current - Receiving: 16.4mA
Data Rate (Max): 1Mbps
Current - Transmitting: 15.6mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 36
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.63 EUR
10+8.19 EUR
25+7.58 EUR
100+6.91 EUR
Mindestbestellmenge: 2
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FF2000UXTR23T2M1BPSA1
FF2000UXTR23T2M1BPSA1
Hersteller: Infineon Technologies
Description: FF2000UXTR23T2M1BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 710A
Input Capacitance (Ciss) (Max) @ Vds: 95000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 1kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 2.65µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 450mA
Supplier Device Package: AG-XHP2K17
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4353.1 EUR
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FF2000UXTR23T2M1PBPSA1
FF2000UXTR23T2M1PBPSA1
Hersteller: Infineon Technologies
Description: FF2000UXTR23T2M1PBPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 675A
Input Capacitance (Ciss) (Max) @ Vds: 95000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 1kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 2.65µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 450mA
Supplier Device Package: AG-XHP2K17
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4395.88 EUR
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FF1300UXTR23T2M1BPSA1 infineon-ff1300uxtr23t2m1-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.07kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 143000pF @ 1500V
Rds On (Max) @ Id, Vgs: 1.59mOhm @ 1.5kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 3980nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 675mA
Supplier Device Package: AG-XHP2K17
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4449.76 EUR
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FF1000UXTR23T2M1BPSA1 infineon-ff1000uxtr23t2m1-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.33kA
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5300nC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K17
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5290.16 EUR
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FF1000UXTR23T2M1B5BPSA1 infineon-ff1000uxtr23t2m1-b5-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: XHP LV
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.335kA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5.3µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K33
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5651.99 EUR
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FF1300UXTR23T2M1PBPSA1 infineon-ff1300uxtr23t2m1-datasheet-en.pdf
FF1300UXTR23T2M1PBPSA1
Hersteller: Infineon Technologies
Description: FF1300UXTR23T2M1PBPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1000A
Input Capacitance (Ciss) (Max) @ Vds: 143000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.59mOhm @ 1.5kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 3.98µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 675mA
Supplier Device Package: AG-XHP2K17
Produkt ist nicht verfügbar
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FF1000UXTR23T2M1PBPSA1 infineon-ff1000uxtr23t2m1-datasheet-en.pdf
FF1000UXTR23T2M1PBPSA1
Hersteller: Infineon Technologies
Description: FF1000UXTR23T2M1PBPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 2300V (2.3kV)
Current - Continuous Drain (Id) @ 25°C: 1.185kA
Input Capacitance (Ciss) (Max) @ Vds: 190000pF @ 1.5kV
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 2kA, 15V
Gate Charge (Qg) (Max) @ Vgs: 5.3µC @ 15V
Vgs(th) (Max) @ Id: 5.15V @ 900mA
Supplier Device Package: AG-XHP2K17
Produkt ist nicht verfügbar
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AUIRFZ34N AUIRFZ34N.pdf
AUIRFZ34N
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N030ATMA1 Infineon-IAUCN04S7N030-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ec8b9c1a48
IAUCN04S7N030ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N030ATMA1 Infineon-IAUCN04S7N030-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ec8b9c1a48
IAUCN04S7N030ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
auf Bestellung 4954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.3 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
2000+0.57 EUR
Mindestbestellmenge: 9
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IAUCN04S7N015ATMA1 Infineon-IAUCN04S7N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc37831f49
IAUCN04S7N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7N015ATMA1 Infineon-IAUCN04S7N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d1b852e018d21fc37831f49
IAUCN04S7N015ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.74 EUR
Mindestbestellmenge: 8
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IAUCN04S7L014ATMA1 Infineon-IAUCN04S7L014-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecded01a60
IAUCN04S7L014ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN04S7L014ATMA1 Infineon-IAUCN04S7L014-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecded01a60
IAUCN04S7L014ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
auf Bestellung 4518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.74 EUR
Mindestbestellmenge: 8
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FF1400R23T2E7B5BPSA1
Hersteller: Infineon Technologies
Description: FF1400R23T2E7B5BPSA1
Packaging: Box
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2003.53 EUR
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AUIRLZ44ZL fundamentals-of-power-semiconductors
AUIRLZ44ZL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C1373D-100AXC ?docID=47296
CY7C1373D-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1371D-100AXC ?docID=47296
CY7C1371D-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1371D-100AXI ?docID=47296
CY7C1371D-100AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1383D-100AXC CY7C1381%2C83%28D%2CF%29%20RevF.pdf
CY7C1383D-100AXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 8.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRLR2905ZTRLPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRLR3114Z auirlr3114z.pdf?fileId=5546d462533600a4015355be8fa61579
AUIRLR3114Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRFZ44VZPBF irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219
IRFZ44VZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
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IGI60L5050B1MXUMA1 infineon-igi60l5050b1m-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: HV IGAN/SIPS/MONOLITH
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 27-PowerTFLGA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 20V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 2.3A, 3A
Current - Peak Output: 4A, 6.7A
Technology: NMOS
Voltage - Load: 600V (Max)
Supplier Device Package: PG-TFLGA-27-2
Fault Protection: UVLO
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
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