Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (118571) > Seite 779 nach 1977
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AUIRFR3504 | Infineon Technologies |
Description: MOSFET N-CH 40V 56A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IPP055N08NF2SAKMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 55µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V |
auf Bestellung 182800 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9350BXSJXTMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO880Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-80 Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE9350BXSJXTMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 PGDSO880Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 5Mbps Protocol: CANbus Supplier Device Package: PG-DSO-8-80 Duplex: Half Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2502 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9AF341LAPMC1-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 96KB 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Connectivity: CSIO, I2C, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Number of I/O: 51 |
Produkt ist nicht verfügbar |
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KITFX20FMC001TOBO1 | Infineon Technologies |
Description: EZ-USB FX20 DEV KITPackaging: Box Type: Interface Contents: Board(s), Cable(s) Utilized IC / Part: FX20 |
auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD55421IVREGEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD5542-1Features: Dimmable Packaging: Bulk Voltage - Output: 2V ~ 51V Voltage - Input: 5.5V ~ 35V Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: TLD5542-1 Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD5191IVREGEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD5191ESFeatures: Dimmable Packaging: Bulk Voltage - Output: 2.15V ~ 41.8V Voltage - Input: 6.2V ~ 35V Contents: Board(s) Current - Output / Channel: 1.5A Utilized IC / Part: TLD5191ES Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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TLD5191HB2WEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD5191ESFeatures: Dimmable Packaging: Bulk Voltage - Output: 6.2V ~ 23.6V Voltage - Input: 6.2V ~ 35V Contents: Board(s) Current - Output / Channel: 1A Utilized IC / Part: TLD5191ES Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG200-16LGXI | Infineon Technologies |
Description: IC MCU 32K FLASH 16QFNPackaging: Tray Package / Case: 16-VFQFN Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (32kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 16-QFN (3x3) Number of I/O: 13 DigiKey Programmable: Not Verified |
auf Bestellung 487 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG200-24LQXI | Infineon Technologies |
Description: IC MCU 32K FLASH 24UQFNPackaging: Tray Package / Case: 24-UQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (32kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 24-QFN Number of I/O: 20 DigiKey Programmable: Not Verified |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG200-32LQXI | Infineon Technologies |
Description: IC MCU 32K FLASH 32UQFNPackaging: Tray Package / Case: 32-UQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (32kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 32-QFN Number of I/O: 28 DigiKey Programmable: Not Verified |
auf Bestellung 618 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG201-32LQXI | Infineon Technologies |
Description: IC MCU 16K FLASH PSOC 32UQFNPackaging: Tray Package / Case: 32-UQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (16kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 32-QFN Number of I/O: 28 DigiKey Programmable: Not Verified |
auf Bestellung 488 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG200-48LTXI | Infineon Technologies |
Description: IC MCU 32K FLASH 48-QFNPackaging: Tray Package / Case: 48-QFN Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (32kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 48-QFN Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 778 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8CTMG201-48LTXI | Infineon Technologies |
Description: IC MCU 16K FLASH PSOC 48-QFNPackaging: Tray Package / Case: 48-QFN Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (16kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 48-QFN Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY8CTMG200A-48PVXI | Infineon Technologies |
Description: IC MCU PSOC MULTI-TOUCH 48SSOP Packaging: Tube Package / Case: 48-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 2K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V Controller Series: CY8CT Program Memory Type: FLASH (32kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 48-SSOP Number of I/O: 38 DigiKey Programmable: Not Verified |
auf Bestellung 149 Stücke: Lieferzeit 10-14 Tag (e) |
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IR21271PBF | Infineon Technologies |
Description: IC GATE DRVR HI/LOW SIDE 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 9V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 80ns, 40ns Channel Type: Single Driven Configuration: High-Side, Low-Side Number of Drivers: 1 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
auf Bestellung 5628 Stücke: Lieferzeit 10-14 Tag (e) |
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IPG20N06S4L26AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 60V 20A 8TDSONPackaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2310 Stücke: Lieferzeit 10-14 Tag (e) |
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CYTVII-B-E-BB | Infineon Technologies |
Description: CYTVII-B-E-BBPackaging: Tray Function: CAN, CXPI, FlexRay, LIN Type: Interface Contents: Board(s) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9335TRPBF | Infineon Technologies |
Description: MOSFET P-CH 30V 5.4A 8SOPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 10µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V |
auf Bestellung 324499 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9393TRPBFXTMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 25µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V |
Produkt ist nicht verfügbar |
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F475R17N3E7B58BPSA1 | Infineon Technologies |
Description: F475R17N3E7B58BPSA1Packaging: Tray |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE49761KHTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR SC59Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Collector Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 18V Technology: Hall Effect Sensing Range: 11mT Trip, 5mT Release Current - Supply (Max): 17mA Supplier Device Package: PG-SC59-3 Test Condition: -40°C ~ 150°C Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLE49761KHTSA1 | Infineon Technologies |
Description: MAGNETIC SWITCH UNIPOLAR SC59Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Collector Polarization: South Pole Mounting Type: Surface Mount Function: Unipolar Switch Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 18V Technology: Hall Effect Sensing Range: 11mT Trip, 5mT Release Current - Supply (Max): 17mA Supplier Device Package: PG-SC59-3 Test Condition: -40°C ~ 150°C Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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ITS4035SEPDXUMA1 | Infineon Technologies |
Description: PROFETFeatures: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 27mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 45V Voltage - Supply (Vcc/Vdd): 5V ~ 45V Current - Output (Max): 13.2A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ITS4035SEPDXUMA1 | Infineon Technologies |
Description: PROFETFeatures: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: PWM Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 27mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 45V Voltage - Supply (Vcc/Vdd): 5V ~ 45V Current - Output (Max): 13.2A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14 Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CYT2B98DACQ0AZEGSHQLA1 | Infineon Technologies |
Description: IC MCU Packaging: Tray |
Produkt ist nicht verfügbar |
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| CYT2B98DACQ0AZEGSTHUYA1 | Infineon Technologies |
Description: IC MCU Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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CYW4373EUBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 128WLBGAPackaging: Cut Tape (CT) Package / Case: 128-UFBGA, WLBGA Sensitivity: -98.8dBm Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz Memory Size: 896kB RAM, 896kB ROM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C (TA) Voltage - Supply: 3V ~ 4.8V Power - Output: 21dBm Protocol: 802.11a/b/g/-c, Bluetooth v5.0 Data Rate (Max): 433.3Mbps Supplier Device Package: 128-WLBGA (4.51x5.43) Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2S, PCM, UART, USB DigiKey Programmable: Not Verified |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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CYW20705B0KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Cut Tape (CT) Package / Case: 50-WFBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.1 Current - Receiving: 31mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 8 RF Family/Standard: Bluetooth Serial Interfaces: SPI, UART, USB DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CYW20713A1KUBXGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 42WLBGAPackaging: Tape & Reel (TR) Package / Case: 42-UFBGA, WLBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.0 +EDR Current - Receiving: 32mA Data Rate (Max): 3Mbps Current - Transmitting: 59mA Supplier Device Package: 42-WLBGA (3.02x2.51) GPIO: 8 Modulation: 4DQPSK, 8DPSK, GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CYW20713A1KUBXGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 42WLBGAPackaging: Cut Tape (CT) Package / Case: 42-UFBGA, WLBGA Sensitivity: -91dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.0 +EDR Current - Receiving: 32mA Data Rate (Max): 3Mbps Current - Transmitting: 59mA Supplier Device Package: 42-WLBGA (3.02x2.51) GPIO: 8 Modulation: 4DQPSK, 8DPSK, GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCM20702B0KWFBGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 50WFBGAPackaging: Tape & Reel (TR) Package / Case: 50-WFBGA Sensitivity: -92dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx + MCU Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Power - Output: 10dBm Protocol: Bluetooth v4.0 +EDR Current - Receiving: 32mA Data Rate (Max): 3Mbps Current - Transmitting: 65mA Supplier Device Package: 50-WFBGA (4.5x4) GPIO: 7 Modulation: 4DQPSK, 8DPSK, GFSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, I2S, SPI, UART, USB DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IRG8P15N120KDPBF | Infineon Technologies |
Description: IGBT 1200V 30A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 15ns/170ns Switching Energy: 600µJ (on), 600µJ (off) Test Condition: 600V, 10A, 10Ohm, 15V Gate Charge: 98 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 30 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
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TLE42994GMV33XUMA3 | Infineon Technologies |
Description: IC REG LIN 3.3V 150MA PG-DSO-14Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Reset Grade: Automotive PSRR: 66dB (100Hz) Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 2 mA Qualification: AEC-Q100 |
auf Bestellung 19700 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLS820F3ELV33BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS820F3 Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3V ~ 40V Current - Output: 200mA Contents: Board(s) Regulator Type: Positive Fixed Utilized IC / Part: TLS820F3 Channels per IC: 1 - Single |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS810B1EJV33BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS810B1EJV33Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3V ~ 42V Current - Output: 100mA Contents: Board(s) Regulator Type: Positive Fixed Utilized IC / Part: TLS810B1EJV33 Channels per IC: 1 - Single |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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REF3K3W3LFCPSUTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS4120D0EPV33Packaging: Box Voltage - Output: 50V Voltage - Input: 180 ~ 265 VAC Current - Output: 66A Contents: Board(s) Utilized IC / Part: TLS4120D0EPV33 Main Purpose: AC/DC Converter Outputs and Type: 1 Non-Isolated Output Power - Output: 3.3kW |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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FZ825R33HE4DBPSA1 | Infineon Technologies |
Description: IGBT MOD 3300V 825A AG-IHVB130-3Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Switch Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A NTC Thermistor: No Supplier Device Package: AG-IHVB130-3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 825 A Voltage - Collector Emitter Breakdown (Max): 3300 V Power - Max: 2400000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S7N012ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Qualification: AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S7N012ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Qualification: AEC-Q101 |
auf Bestellung 11210 Stücke: Lieferzeit 10-14 Tag (e) |
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IQEH46NE2LM7ZCGSCATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 432µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IQEH46NE2LM7ZCGSCATMA1 | Infineon Technologies |
Description: TRENCH <= 40VPackaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 1.7V @ 432µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V |
auf Bestellung 6352 Stücke: Lieferzeit 10-14 Tag (e) |
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ISCH69N04NM7VATMA1 | Infineon Technologies |
Description: ISCH69N04NM7VATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.15V @ 82µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ISCH69N04NM7VATMA1 | Infineon Technologies |
Description: ISCH69N04NM7VATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.15V @ 82µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V |
auf Bestellung 4863 Stücke: Lieferzeit 10-14 Tag (e) |
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IDWD150G120C5XKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 8485pF @ 1V, 100kHz Current - Average Rectified (Io): 343A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV |
auf Bestellung 109 Stücke: Lieferzeit 10-14 Tag (e) |
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IQFH99N06NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 147µA Supplier Device Package: PG-TSON-12-U01 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IQFH99N06NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 147µA Supplier Device Package: PG-TSON-12-U01 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IQFH86N06NM5ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 12-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 394A (Tc) Rds On (Max) @ Id, Vgs: 0.86mOhm @ 100A, 10V Power Dissipation (Max): 3W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 176µA Supplier Device Package: PG-TSON-12-U01 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 30 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IDWD50G120C5XKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2890pF @ 1V, 100kHz Current - Average Rectified (Io): 131A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IDWD60G120C5XKSA1 | Infineon Technologies |
Description: SIC DISCRETEPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 3580pF @ 1V, 100kHz Current - Average Rectified (Io): 153A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4148AZQ-S445 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 54 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4148AXI-S445 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 64TQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (14x14) Number of I/O: 54 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY8C4148AXQ-S455 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 100-TQFP (14x14) Number of I/O: 54 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1061GE18-15ZSXIT | Infineon Technologies |
Description: IC SRAM 16MBIT PAR 54TSOP IIPackaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1061G18-15ZSXIT | Infineon Technologies |
Description: IC SRAM 16MBIT PAR 54TSOP IIPackaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1061GN18-15ZSXIT | Infineon Technologies |
Description: IC SRAM 16MBIT PAR 54TSOP IIPackaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1061G18-15ZXIT | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48TSOP IPackaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1061GE18-15ZXIT | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48TSOP IPackaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CY7C1061GN18-15ZSXI | Infineon Technologies |
Description: IC SRAM 16MBIT PAR 54TSOP IIPackaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AUIRFR3504 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 56A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 30A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPP055N08NF2SAKMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 55µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
auf Bestellung 182800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 238+ | 1.9 EUR |
| TLE9350BXSJXTMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.8 EUR |
| TLE9350BXSJXTMA1 |
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Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
Description: IC TRANSCEIVER HALF 1/1 PGDSO880
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 5Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8-80
Duplex: Half
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 15+ | 1.21 EUR |
| 25+ | 1.09 EUR |
| 100+ | 0.96 EUR |
| 250+ | 0.9 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.83 EUR |
| CY9AF341LAPMC1-G-JNE2 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
Description: IC MCU 32BIT 96KB 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KITFX20FMC001TOBO1 |
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Hersteller: Infineon Technologies
Description: EZ-USB FX20 DEV KIT
Packaging: Box
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: FX20
Description: EZ-USB FX20 DEV KIT
Packaging: Box
Type: Interface
Contents: Board(s), Cable(s)
Utilized IC / Part: FX20
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 311.82 EUR |
| TLD55421IVREGEVALTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5542-1
Features: Dimmable
Packaging: Bulk
Voltage - Output: 2V ~ 51V
Voltage - Input: 5.5V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5542-1
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD5542-1
Features: Dimmable
Packaging: Bulk
Voltage - Output: 2V ~ 51V
Voltage - Input: 5.5V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5542-1
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 310.13 EUR |
| TLD5191IVREGEVALTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5191ES
Features: Dimmable
Packaging: Bulk
Voltage - Output: 2.15V ~ 41.8V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD5191ES
Features: Dimmable
Packaging: Bulk
Voltage - Output: 2.15V ~ 41.8V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1.5A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 299.71 EUR |
| TLD5191HB2WEVALTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5191ES
Features: Dimmable
Packaging: Bulk
Voltage - Output: 6.2V ~ 23.6V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR TLD5191ES
Features: Dimmable
Packaging: Bulk
Voltage - Output: 6.2V ~ 23.6V
Voltage - Input: 6.2V ~ 35V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5191ES
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 465.36 EUR |
| CY8CTMG200-16LGXI |
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Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 16QFN
Packaging: Tray
Package / Case: 16-VFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
Description: IC MCU 32K FLASH 16QFN
Packaging: Tray
Package / Case: 16-VFQFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 13
DigiKey Programmable: Not Verified
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.53 EUR |
| 10+ | 9.72 EUR |
| 25+ | 9.02 EUR |
| 100+ | 8.24 EUR |
| CY8CTMG200-24LQXI |
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Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32K FLASH 24UQFN
Packaging: Tray
Package / Case: 24-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 24-QFN
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 12.85 EUR |
| 10+ | 9.97 EUR |
| 25+ | 9.25 EUR |
| 100+ | 8.46 EUR |
| 490+ | 7.87 EUR |
| CY8CTMG200-32LQXI |
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Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 32K FLASH 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.16 EUR |
| 10+ | 10.23 EUR |
| 25+ | 9.49 EUR |
| 100+ | 8.68 EUR |
| 490+ | 8.07 EUR |
| CY8CTMG201-32LQXI |
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Hersteller: Infineon Technologies
Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 16K FLASH PSOC 32UQFN
Packaging: Tray
Package / Case: 32-UQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 488 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.32 EUR |
| 10+ | 10.35 EUR |
| 25+ | 9.61 EUR |
| 100+ | 8.79 EUR |
| CY8CTMG200-48LTXI |
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Hersteller: Infineon Technologies
Description: IC MCU 32K FLASH 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 32K FLASH 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.48 EUR |
| 10+ | 10.48 EUR |
| 25+ | 9.73 EUR |
| 100+ | 8.9 EUR |
| 260+ | 8.49 EUR |
| 520+ | 8.26 EUR |
| CY8CTMG201-48LTXI |
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Hersteller: Infineon Technologies
Description: IC MCU 16K FLASH PSOC 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 16K FLASH PSOC 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (16kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.48 EUR |
| 10+ | 10.48 EUR |
| 25+ | 9.73 EUR |
| 100+ | 8.9 EUR |
| CY8CTMG200A-48PVXI |
Hersteller: Infineon Technologies
Description: IC MCU PSOC MULTI-TOUCH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU PSOC MULTI-TOUCH 48SSOP
Packaging: Tube
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-SSOP
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 13.48 EUR |
| 10+ | 10.48 EUR |
| 30+ | 9.6 EUR |
| 120+ | 8.82 EUR |
| IR21271PBF | ![]() |
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Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side, Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
auf Bestellung 5628 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 127+ | 3.53 EUR |
| IPG20N06S4L26AATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2310 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 427+ | 1.05 EUR |
| CYTVII-B-E-BB |
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Hersteller: Infineon Technologies
Description: CYTVII-B-E-BB
Packaging: Tray
Function: CAN, CXPI, FlexRay, LIN
Type: Interface
Contents: Board(s)
Description: CYTVII-B-E-BB
Packaging: Tray
Function: CAN, CXPI, FlexRay, LIN
Type: Interface
Contents: Board(s)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1510.1 EUR |
| IRF9335TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Description: MOSFET P-CH 30V 5.4A 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
auf Bestellung 324499 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 872+ | 0.51 EUR |
| IRF9393TRPBFXTMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 9.2A, 20V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| F475R17N3E7B58BPSA1 |
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auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 169.24 EUR |
| 10+ | 143.08 EUR |
| TLE49761KHTSA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE49761KHTSA1 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 18V
Technology: Hall Effect
Sensing Range: 11mT Trip, 5mT Release
Current - Supply (Max): 17mA
Supplier Device Package: PG-SC59-3
Test Condition: -40°C ~ 150°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 25+ | 0.71 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.56 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.49 EUR |
| ITS4035SEPDXUMA1 |
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Hersteller: Infineon Technologies
Description: PROFET
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
Description: PROFET
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 2.34 EUR |
| ITS4035SEPDXUMA1 |
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Hersteller: Infineon Technologies
Description: PROFET
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
Description: PROFET
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 45V
Voltage - Supply (Vcc/Vdd): 5V ~ 45V
Current - Output (Max): 13.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 10+ | 3.04 EUR |
| 25+ | 2.78 EUR |
| 100+ | 2.49 EUR |
| 250+ | 2.36 EUR |
| 500+ | 2.28 EUR |
| 1000+ | 2.21 EUR |
| CYW4373EUBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 128WLBGA
Packaging: Cut Tape (CT)
Package / Case: 128-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 128-WLBGA (4.51x5.43)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 128WLBGA
Packaging: Cut Tape (CT)
Package / Case: 128-UFBGA, WLBGA
Sensitivity: -98.8dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 896kB RAM, 896kB ROM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 4.8V
Power - Output: 21dBm
Protocol: 802.11a/b/g/-c, Bluetooth v5.0
Data Rate (Max): 433.3Mbps
Supplier Device Package: 128-WLBGA (4.51x5.43)
Modulation: 16QAM, 64QAM, 256QAM, BPSK, CCK, DSSS, GFSK, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCM, UART, USB
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 14.85 EUR |
| 10+ | 12.9 EUR |
| 25+ | 12.22 EUR |
| 100+ | 11.29 EUR |
| 250+ | 10.73 EUR |
| 500+ | 10.33 EUR |
| 1000+ | 10.14 EUR |
| CYW20705B0KWFBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYW20713A1KUBXGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYW20713A1KUBXGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Cut Tape (CT)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Cut Tape (CT)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCM20702B0KWFBGT |
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Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRG8P15N120KDPBF |
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Hersteller: Infineon Technologies
Description: IGBT 1200V 30A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
Description: IGBT 1200V 30A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE42994GMV33XUMA3 |
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Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 150MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
PSRR: 66dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 150MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
PSRR: 66dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Qualification: AEC-Q100
auf Bestellung 19700 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 211+ | 2.16 EUR |
| TLS820F3ELV33BOARDTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS820F3
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS820F3
Channels per IC: 1 - Single
Description: EVAL BOARD FOR TLS820F3
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS820F3
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 872.45 EUR |
| TLS810B1EJV33BOARDTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS810B1EJV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810B1EJV33
Channels per IC: 1 - Single
Description: EVAL BOARD FOR TLS810B1EJV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810B1EJV33
Channels per IC: 1 - Single
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 92.73 EUR |
| REF3K3W3LFCPSUTOBO1 |
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Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Box
Voltage - Output: 50V
Voltage - Input: 180 ~ 265 VAC
Current - Output: 66A
Contents: Board(s)
Utilized IC / Part: TLS4120D0EPV33
Main Purpose: AC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 3.3kW
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Box
Voltage - Output: 50V
Voltage - Input: 180 ~ 265 VAC
Current - Output: 66A
Contents: Board(s)
Utilized IC / Part: TLS4120D0EPV33
Main Purpose: AC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 3.3kW
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1877.64 EUR |
| FZ825R33HE4DBPSA1 |
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Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 2047.28 EUR |
| IAUCN04S7N012ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.81 EUR |
| 10000+ | 0.76 EUR |
| IAUCN04S7N012ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
auf Bestellung 11210 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.08 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
| 2000+ | 0.91 EUR |
| IQEH46NE2LM7ZCGSCATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6000+ | 1.57 EUR |
| IQEH46NE2LM7ZCGSCATMA1 |
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Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
auf Bestellung 6352 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.3 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.4 EUR |
| 500+ | 1.95 EUR |
| 1000+ | 1.92 EUR |
| ISCH69N04NM7VATMA1 |
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Hersteller: Infineon Technologies
Description: ISCH69N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
Description: ISCH69N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISCH69N04NM7VATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
auf Bestellung 4863 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.79 EUR |
| 10+ | 3.11 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.61 EUR |
| IDWD150G120C5XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8485pF @ 1V, 100kHz
Current - Average Rectified (Io): 343A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8485pF @ 1V, 100kHz
Current - Average Rectified (Io): 343A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 54.07 EUR |
| 30+ | 35.76 EUR |
| IQFH99N06NM5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IQFH99N06NM5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 8.99 EUR |
| 10+ | 6 EUR |
| 100+ | 4.3 EUR |
| IQFH86N06NM5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 394A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 176µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 394A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 176µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 30 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10 EUR |
| 10+ | 6.7 EUR |
| 100+ | 4.83 EUR |
| IDWD50G120C5XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2890pF @ 1V, 100kHz
Current - Average Rectified (Io): 131A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2890pF @ 1V, 100kHz
Current - Average Rectified (Io): 131A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 23.02 EUR |
| 30+ | 14.12 EUR |
| 120+ | 12.17 EUR |
| IDWD60G120C5XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4148AZQ-S445 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4148AXI-S445 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4148AXQ-S455 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1061GE18-15ZSXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1061G18-15ZSXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1061GN18-15ZSXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1061G18-15ZXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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| CY7C1061GE18-15ZXIT |
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Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1061GN18-15ZSXI |
![]() |
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH







































