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CY2300SXC CY2300SXC Infineon Technologies Infineon-CY2300_PHASE_ALIGNED_CLOCK_MULTIPLIER-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5e8b23c09 Description: IC CLOCK MULTIPLIER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.67MHz
Type: Clock Multiplier, Fanout Distribution
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 314 Stücke:
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1+32.12 EUR
10+25.69 EUR
25+24.08 EUR
100+22.32 EUR
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IAUCN04S7L037HATMA1 IAUCN04S7L037HATMA1 Infineon Technologies infineon-iaucn04s7l037h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7L037HATMA1 IAUCN04S7L037HATMA1 Infineon Technologies infineon-iaucn04s7l037h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 780 Stücke:
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10+1.85 EUR
14+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+1 EUR
500+0.96 EUR
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XDPE1A2G5B5500XUMA1 Infineon Technologies infineon-xdpe1a2g5b-0000-datasheet-en.pdf Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Tape & Reel (TR)
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XDPE1A2G5B5500XUMA1 Infineon Technologies infineon-xdpe1a2g5b-0000-datasheet-en.pdf Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Cut Tape (CT)
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CY8C4147LDES243XQLA1 CY8C4147LDES243XQLA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4147LDES243TXUMA1 CY8C4147LDES243TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4146LDES453XQLA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4146LDES453TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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S25FL512SAGMFAR10 S25FL512SAGMFAR10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYAT81659-100AA48T CYAT81659-100AA48T Infineon Technologies 448_PdfFile984121.pdf Description: IC TSC 2 WIRE CAP 100-TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IMYR140R008M2HXLSA1 IMYR140R008M2HXLSA1 Infineon Technologies Infineon-IMYR140R008M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce2b9ee915c6 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 207A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 92.6A, 18V
Power Dissipation (Max): 710W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 1000 V
auf Bestellung 239 Stücke:
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1+61.02 EUR
30+40.55 EUR
120+37.7 EUR
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CYPM1211-40LQXI CYPM1211-40LQXI Infineon Technologies Infineon-PMG1-S2_DATASHEET_POWER_DELIVERY_MICROCONTROLLER_GEN1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4788733e Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 3559 Stücke:
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3+6.04 EUR
10+4.55 EUR
25+4.18 EUR
100+3.77 EUR
490+3.47 EUR
980+3.37 EUR
1470+3.32 EUR
2940+3.25 EUR
Mindestbestellmenge: 3
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IRFZ44VZPBF IRFZ44VZPBF Infineon Technologies irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219 Description: MOSFET N-CH 60V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFZ44Z AUIRFZ44Z Infineon Technologies auirfz44z.pdf?fileId=5546d462533600a4015355b9f8771509 Description: MOSFET N-CH 55V 51A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XMC5200F100K1088AAXQLA1 XMC5200F100K1088AAXQLA1 Infineon Technologies XMC5200F100K1088AAXQLA1 Description: INDUSTRIAL-XMC5/7
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 2x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: PG-LQFP-100-800
Number of I/O: 78
Produkt ist nicht verfügbar
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XMC5300F100K2112AAXQLA1 XMC5300F100K2112AAXQLA1 Infineon Technologies XMC5300F100K2112AAXQLA1 Description: INDUSTRIAL-XMC5/7
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.056MB (2.056M x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 2x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: PG-LQFP-100-800
Number of I/O: 78
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XMC6221SCQ024XABXUMA1 XMC6221SCQ024XABXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAV70 Infineon Technologies Infineon-BAV70SERIES-DS-v01_01-en.pdf?fileId=db3a30431400ef6801141c0ba40e041d Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
auf Bestellung 167566 Stücke:
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5621+0.075 EUR
Mindestbestellmenge: 5621
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BTG7016A1EPWXUMA2 BTG7016A1EPWXUMA2 Infineon Technologies infineon-btg7016a-1epw-datasheet-en.pdf Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTG7016A1EPWXUMA2 BTG7016A1EPWXUMA2 Infineon Technologies infineon-btg7016a-1epw-datasheet-en.pdf Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.04 EUR
10+2.25 EUR
25+2.05 EUR
100+1.83 EUR
250+1.73 EUR
500+1.67 EUR
Mindestbestellmenge: 6
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BTG7007A1EPWXUMA2 BTG7007A1EPWXUMA2 Infineon Technologies infineon-btg7007a-1epw-datasheet-en.pdf Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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BTG7007A1EPWXUMA2 BTG7007A1EPWXUMA2 Infineon Technologies infineon-btg7007a-1epw-datasheet-en.pdf Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.94 EUR
10+2.93 EUR
25+2.68 EUR
100+2.4 EUR
250+2.27 EUR
500+2.21 EUR
Mindestbestellmenge: 5
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BTG7003A1EPWXUMA2 BTG7003A1EPWXUMA2 Infineon Technologies infineon-btg7003a-1epw-datasheet-en.pdf Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 15.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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BTG7003A1EPWXUMA2 BTG7003A1EPWXUMA2 Infineon Technologies infineon-btg7003a-1epw-datasheet-en.pdf Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 15.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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TC337LP32F200SAAKXUMA1 TC337LP32F200SAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
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IDH02G120C5XKSA1 IDH02G120C5XKSA1 Infineon Technologies Infineon-IDH02G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f742547f51720 Description: DIODE SIL CARB 1200V 2A PGTO2201
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
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KP467QXTMA1 KP467QXTMA1 Infineon Technologies KP467QXTMA1.pdf Description: KP467QXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
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KP467QXTMA1 KP467QXTMA1 Infineon Technologies KP467QXTMA1.pdf Description: KP467QXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
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KP400XTMA1 KP400XTMA1 Infineon Technologies Infineon-KP400-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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KP400XTMA1 KP400XTMA1 Infineon Technologies Infineon-KP400-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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FF450R45T3E4B5BPSA1 FF450R45T3E4B5BPSA1 Infineon Technologies Infineon-FF450R45T3E4_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec07e112480b Description: IGBT MOD 4.5KV 450A AG-XHP100-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1500000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 76600 pF @ 25 V
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DD450S45T3E4B5BPSA1 DD450S45T3E4B5BPSA1 Infineon Technologies Infineon-DD450S45T3E4_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec0810f44817 Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 4.5 kV
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IPT009N08NM6ATMA1 IPT009N08NM6ATMA1 Infineon Technologies infineon-ipt009n08nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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AUIRF3205ZS AUIRF3205ZS Infineon Technologies auirf3205z.pdf?fileId=5546d462533600a4015355ac71f813a1 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
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IAUMN04S7N005GAUMA1 IAUMN04S7N005GAUMA1 Infineon Technologies Infineon-IAUMN04S7N005G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b91217ac6634 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
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IAUMN04S7N005GAUMA1 IAUMN04S7N005GAUMA1 Infineon Technologies Infineon-IAUMN04S7N005G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b91217ac6634 Description: MOSFET_(20V 40V)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
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AUIRF4905L AUIRF4905L Infineon Technologies AUIRF4905S%2CL.pdf Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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ISC033N10NM8ATMA1 Infineon Technologies Description: ISC033N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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ISC033N10NM8ATMA1 Infineon Technologies Description: ISC033N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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AUIRL3705ZS AUIRL3705ZS Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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AUIRL3705ZSTRL AUIRL3705ZSTRL Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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IRGS6B60KTRLPBF IRGS6B60KTRLPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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XMC1403Q064X0128AAXTMA1 XMC1403Q064X0128AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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AUIRFB4610 AUIRFB4610 Infineon Technologies auirfb4610.pdf?fileId=5546d462533600a4015355b1155d1423 Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
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AUIRLR3114Z AUIRLR3114Z Infineon Technologies auirlr3114z.pdf?fileId=5546d462533600a4015355be8fa61579 Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
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IGK120B041SXTSA1 IGK120B041SXTSA1 Infineon Technologies infineon-igk120b041s-datasheet-en.pdf Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
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IGK120B041SXTSA1 IGK120B041SXTSA1 Infineon Technologies infineon-igk120b041s-datasheet-en.pdf Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
auf Bestellung 3975 Stücke:
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250+0.49 EUR
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IGK048B041SXTSA1 IGK048B041SXTSA1 Infineon Technologies infineon-igk048b041s-datasheet-en.pdf Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Produkt ist nicht verfügbar
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IGK048B041SXTSA1 IGK048B041SXTSA1 Infineon Technologies infineon-igk048b041s-datasheet-en.pdf Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
auf Bestellung 3964 Stücke:
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IRG4PC30FPBF IRG4PC30FPBF Infineon Technologies irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2 Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIMDQ75R033M2HXTMA1 AIMDQ75R033M2HXTMA1 Infineon Technologies infineon-aimdq75r033m2h-datasheet-en.pdf Description: AIMDQ75R033M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R033M2HXTMA1 AIMDQ75R033M2HXTMA1 Infineon Technologies infineon-aimdq75r033m2h-datasheet-en.pdf Description: AIMDQ75R033M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
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1+18.23 EUR
10+12.64 EUR
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IRG8P60N120KD-EPBF IRG8P60N120KD-EPBF Infineon Technologies IRG8P60N120KD%28-E%29PbF.pdf Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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BTH62001ENAXUMA1 Infineon Technologies Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62001ENAXUMA1 Infineon Technologies Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTH62001ENAXUMA1 Infineon Technologies Description: FOR 48 V BOARD NETS
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62004ESAXUMA1 BTH62004ESAXUMA1 Infineon Technologies infineon-bth6200-4esa-datasheet-en.pdf Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62004ESAXUMA1 BTH62004ESAXUMA1 Infineon Technologies infineon-bth6200-4esa-datasheet-en.pdf Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2955 Stücke:
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4+5.3 EUR
10+3.99 EUR
25+3.66 EUR
100+3.3 EUR
250+3.13 EUR
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1000+2.94 EUR
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1ED2147S65FXUMA1 1ED2147S65FXUMA1 Infineon Technologies DS_1ED2127%20final%20datasheet%20Rev2_0.pdf Description: 1ED2147S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Produkt ist nicht verfügbar
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CY2300SXC Infineon-CY2300_PHASE_ALIGNED_CLOCK_MULTIPLIER-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec5e8b23c09
CY2300SXC
Hersteller: Infineon Technologies
Description: IC CLOCK MULTIPLIER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.67MHz
Type: Clock Multiplier, Fanout Distribution
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 314 Stücke:
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Anzahl Preis
1+32.12 EUR
10+25.69 EUR
25+24.08 EUR
100+22.32 EUR
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IAUCN04S7L037HATMA1 infineon-iaucn04s7l037h-datasheet-en.pdf
IAUCN04S7L037HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7L037HATMA1 infineon-iaucn04s7l037h-datasheet-en.pdf
IAUCN04S7L037HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 84A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V
Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
14+1.33 EUR
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100+1.06 EUR
250+1 EUR
500+0.96 EUR
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XDPE1A2G5B5500XUMA1 infineon-xdpe1a2g5b-0000-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Tape & Reel (TR)
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XDPE1A2G5B5500XUMA1 infineon-xdpe1a2g5b-0000-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: DIGITAL DUAL LOOP 16-PHASE CONTR
Packaging: Cut Tape (CT)
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CY8C4147LDES243XQLA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4147LDES243XQLA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4147LDES243TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4147LDES243TXUMA1
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4146LDES453XQLA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4146LDES453TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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S25FL512SAGMFAR10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SAGMFAR10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYAT81659-100AA48T 448_PdfFile984121.pdf
CYAT81659-100AA48T
Hersteller: Infineon Technologies
Description: IC TSC 2 WIRE CAP 100-TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 100-TQFP (14x14)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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IMYR140R008M2HXLSA1 Infineon-IMYR140R008M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196ce2b9ee915c6
IMYR140R008M2HXLSA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 207A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 92.6A, 18V
Power Dissipation (Max): 710W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-TO247-4-18
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 1000 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.02 EUR
30+40.55 EUR
120+37.7 EUR
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CYPM1211-40LQXI Infineon-PMG1-S2_DATASHEET_POWER_DELIVERY_MICROCONTROLLER_GEN1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4788733e
CYPM1211-40LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 3559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.04 EUR
10+4.55 EUR
25+4.18 EUR
100+3.77 EUR
490+3.47 EUR
980+3.37 EUR
1470+3.32 EUR
2940+3.25 EUR
Mindestbestellmenge: 3
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IRFZ44VZPBF irfz44vzpbf.pdf?fileId=5546d462533600a40153563b60f62219
IRFZ44VZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
Produkt ist nicht verfügbar
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AUIRFZ44Z auirfz44z.pdf?fileId=5546d462533600a4015355b9f8771509
AUIRFZ44Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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XMC5200F100K1088AAXQLA1 XMC5200F100K1088AAXQLA1
XMC5200F100K1088AAXQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-XMC5/7
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 1.06MB (1.06M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 2x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: PG-LQFP-100-800
Number of I/O: 78
Produkt ist nicht verfügbar
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XMC5300F100K2112AAXQLA1 XMC5300F100K2112AAXQLA1
XMC5300F100K2112AAXQLA1
Hersteller: Infineon Technologies
Description: INDUSTRIAL-XMC5/7
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.056MB (2.056M x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 2x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: PG-LQFP-100-800
Number of I/O: 78
Produkt ist nicht verfügbar
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XMC6221SCQ024XABXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
XMC6221SCQ024XABXUMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAV70 Infineon-BAV70SERIES-DS-v01_01-en.pdf?fileId=db3a30431400ef6801141c0ba40e041d
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
auf Bestellung 167566 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5621+0.075 EUR
Mindestbestellmenge: 5621
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BTG7016A1EPWXUMA2 infineon-btg7016a-1epw-datasheet-en.pdf
BTG7016A1EPWXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTG7016A1EPWXUMA2 infineon-btg7016a-1epw-datasheet-en.pdf
BTG7016A1EPWXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 18mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 6.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+2.25 EUR
25+2.05 EUR
100+1.83 EUR
250+1.73 EUR
500+1.67 EUR
Mindestbestellmenge: 6
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BTG7007A1EPWXUMA2 infineon-btg7007a-1epw-datasheet-en.pdf
BTG7007A1EPWXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTG7007A1EPWXUMA2 infineon-btg7007a-1epw-datasheet-en.pdf
BTG7007A1EPWXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 10.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.93 EUR
25+2.68 EUR
100+2.4 EUR
250+2.27 EUR
500+2.21 EUR
Mindestbestellmenge: 5
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BTG7003A1EPWXUMA2 infineon-btg7003a-1epw-datasheet-en.pdf
BTG7003A1EPWXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 15.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.8 EUR
Mindestbestellmenge: 3000
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BTG7003A1EPWXUMA2 infineon-btg7003a-1epw-datasheet-en.pdf
BTG7003A1EPWXUMA2
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 14TSSOP
Features: PWM Input, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: PWM
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3.6mOhm
Input Type: Non-Inverting
Voltage - Load: 2.75V ~ 28V
Voltage - Supply (Vcc/Vdd): 2.75V ~ 28V
Current - Output (Max): 15.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
10+3.95 EUR
25+3.62 EUR
100+3.26 EUR
250+3.09 EUR
500+3.06 EUR
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TC337LP32F200SAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC337LP32F200SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-292-11
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IDH02G120C5XKSA1 Infineon-IDH02G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f742547f51720
IDH02G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 2A PGTO2201
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 1037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+1.96 EUR
Mindestbestellmenge: 229
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KP467QXTMA1 KP467QXTMA1.pdf
KP467QXTMA1
Hersteller: Infineon Technologies
Description: KP467QXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
Produkt ist nicht verfügbar
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KP467QXTMA1 KP467QXTMA1.pdf
KP467QXTMA1
Hersteller: Infineon Technologies
Description: KP467QXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
Mindestbestellmenge: 7
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KP400XTMA1 Infineon-KP400-TPD-v01_00-EN.pdf
KP400XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3400+5.27 EUR
Mindestbestellmenge: 3400
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KP400XTMA1 Infineon-KP400-TPD-v01_00-EN.pdf
KP400XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
5+7.34 EUR
10+7.03 EUR
25+6.66 EUR
50+6.41 EUR
100+6.18 EUR
500+5.71 EUR
1000+5.54 EUR
Mindestbestellmenge: 3
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FF450R45T3E4B5BPSA1 Infineon-FF450R45T3E4_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec07e112480b
FF450R45T3E4B5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 4.5KV 450A AG-XHP100-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1500000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 76600 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2277.58 EUR
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DD450S45T3E4B5BPSA1 Infineon-DD450S45T3E4_B5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018bec0810f44817
DD450S45T3E4B5BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 4.5 kV
auf Bestellung 4 Stücke:
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Anzahl Preis
1+1859.58 EUR
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IPT009N08NM6ATMA1 infineon-ipt009n08nm6-datasheet-en.pdf
IPT009N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.22 EUR
10+10.45 EUR
100+7.89 EUR
Mindestbestellmenge: 2
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AUIRF3205ZS auirf3205z.pdf?fileId=5546d462533600a4015355ac71f813a1
AUIRF3205ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUMN04S7N005GAUMA1 Infineon-IAUMN04S7N005G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b91217ac6634
IAUMN04S7N005GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+3.79 EUR
25+3.48 EUR
100+3.13 EUR
250+2.97 EUR
500+2.87 EUR
1000+2.79 EUR
Mindestbestellmenge: 4
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IAUMN04S7N005GAUMA1 Infineon-IAUMN04S7N005G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b91217ac6634
IAUMN04S7N005GAUMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRF4905L AUIRF4905S%2CL.pdf
AUIRF4905L
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISC033N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC033N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Produkt ist nicht verfügbar
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ISC033N10NM8ATMA1
Hersteller: Infineon Technologies
Description: ISC033N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Produkt ist nicht verfügbar
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AUIRL3705ZS auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRL3705ZSTRL auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705ZSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IRGS6B60KTRLPBF fundamentals-of-power-semiconductors
IRGS6B60KTRLPBF
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
Produkt ist nicht verfügbar
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XMC1403Q064X0128AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0128AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Produkt ist nicht verfügbar
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AUIRFB4610 auirfb4610.pdf?fileId=5546d462533600a4015355b1155d1423
AUIRFB4610
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRLR3114Z auirlr3114z.pdf?fileId=5546d462533600a4015355be8fa61579
AUIRLR3114Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3810 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IGK120B041SXTSA1 infineon-igk120b041s-datasheet-en.pdf
IGK120B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
Produkt ist nicht verfügbar
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IGK120B041SXTSA1 infineon-igk120b041s-datasheet-en.pdf
IGK120B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
27+0.67 EUR
30+0.6 EUR
100+0.53 EUR
250+0.49 EUR
500+0.47 EUR
1000+0.45 EUR
Mindestbestellmenge: 19
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IGK048B041SXTSA1 infineon-igk048b041s-datasheet-en.pdf
IGK048B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Produkt ist nicht verfügbar
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IGK048B041SXTSA1 infineon-igk048b041s-datasheet-en.pdf
IGK048B041SXTSA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
13+1.46 EUR
25+1.32 EUR
100+1.17 EUR
250+1.1 EUR
500+1.06 EUR
1000+1.02 EUR
Mindestbestellmenge: 9
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IRG4PC30FPBF irg4pc30fpbf.pdf?fileId=5546d462533600a401535643c34522c2
IRG4PC30FPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIMDQ75R033M2HXTMA1 infineon-aimdq75r033m2h-datasheet-en.pdf
AIMDQ75R033M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R033M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R033M2HXTMA1 infineon-aimdq75r033m2h-datasheet-en.pdf
AIMDQ75R033M2HXTMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R033M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.23 EUR
10+12.64 EUR
100+9.99 EUR
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IRG8P60N120KD-EPBF IRG8P60N120KD%28-E%29PbF.pdf
IRG8P60N120KD-EPBF
Hersteller: Infineon Technologies
Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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BTH62001ENAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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BTH62001ENAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62001ENAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62004ESAXUMA1 infineon-bth6200-4esa-datasheet-en.pdf
BTH62004ESAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BTH62004ESAXUMA1 infineon-bth6200-4esa-datasheet-en.pdf
BTH62004ESAXUMA1
Hersteller: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.3 EUR
10+3.99 EUR
25+3.66 EUR
100+3.3 EUR
250+3.13 EUR
500+3.02 EUR
1000+2.94 EUR
Mindestbestellmenge: 4
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1ED2147S65FXUMA1 DS_1ED2127%20final%20datasheet%20Rev2_0.pdf
1ED2147S65FXUMA1
Hersteller: Infineon Technologies
Description: 1ED2147S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Produkt ist nicht verfügbar
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