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GS0650146LRMRXUSA1 GS0650146LRMRXUSA1 Infineon Technologies Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9 Description: GS-065-014-6-LR-MR
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
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GS0650146LRMRXUSA1 GS0650146LRMRXUSA1 Infineon Technologies Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9 Description: GS-065-014-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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10+5.97 EUR
100+4.3 EUR
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GS0650306LRMRXUSA1 GS0650306LRMRXUSA1 Infineon Technologies Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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500+7.75 EUR
750+7.72 EUR
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GS0650306LRMRXUSA1 GS0650306LRMRXUSA1 Infineon Technologies Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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10+12.09 EUR
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SKB02N60E3266ATMA1 SKB02N60E3266ATMA1 Infineon Technologies SKB02N60.pdf Description: IGBT NPT 600V 6A TO263-3-2
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
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SKB02N60ATMA1 SKB02N60ATMA1 Infineon Technologies SKB02N60.pdf Description: IGBT NPT 600V 6A TO263-3-2
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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GS66516TMRXUSA1 GS66516TMRXUSA1 Infineon Technologies Description: GS66516T-MR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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GS66516TMRXUSA1 GS66516TMRXUSA1 Infineon Technologies Description: GS66516T-MR
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
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GS66516TTRXUMA1 GS66516TTRXUMA1 Infineon Technologies Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea Description: GS66516T-TR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GS66516TTRXUMA1 GS66516TTRXUMA1 Infineon Technologies Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea Description: GS66516T-TR
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Produkt ist nicht verfügbar
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IPB023N03LF2SATMA1 IPB023N03LF2SATMA1 Infineon Technologies infineon-ipb023n03lf2s-datasheet-en.pdf Description: IPB023N03LF2SATMA1
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
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IPB023N03LF2SATMA1 IPB023N03LF2SATMA1 Infineon Technologies infineon-ipb023n03lf2s-datasheet-en.pdf Description: IPB023N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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TLE9944EQA40XUMA1 TLE9944EQA40XUMA1 Infineon Technologies Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
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TLE9944EQW40XUMA1 TLE9944EQW40XUMA1 Infineon Technologies Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e Description: EMBEDDED_POWER
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 5
Grade: Automotive
Supplier Device Package: PG-TSDSO-32-1
Core Processor: ARM® Cortex®-M23
Applications: BLDC Controller
Program Memory Type: FLASH (72kB)
Controller Series: TLE9954
Voltage - Supply: 5.5V ~ 29V
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Interface: LINbus, SSC, UART/USART
Mounting Type: Surface Mount
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BTM9010EPXUMA1 BTM9010EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9010EPXUMA1
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
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BTM9010EPXUMA1 BTM9010EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9010EPXUMA1
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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7+2.9 EUR
10+2.13 EUR
25+1.94 EUR
100+1.73 EUR
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CYW20719B2KUMLGT CYW20719B2KUMLGT Infineon Technologies Infineon-CYW20719_AIROC_Bluetooth_Bluetooth_LE_system_on_chip_Enhanced_low_power-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3 Description: IC RF TXRX+MCU 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR, GLONASS, GPS
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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2+11.4 EUR
10+9.88 EUR
25+9.36 EUR
100+8.63 EUR
250+8.2 EUR
500+7.89 EUR
1000+7.6 EUR
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IR2181PBF IR2181PBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRFI530NPBF IRFI530NPBF Infineon Technologies irfi530npbf.pdf?fileId=5546d462533600a401535624411f1f8c Description: MOSFET N-CH 100V 12A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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IRF7470TR IRF7470TR Infineon Technologies IRF7470.pdf Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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P3000ZL45X168APT8HPSA1 P3000ZL45X168APT8HPSA1 Infineon Technologies Infineon-P3000ZL45X168-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7f2a768a017facf5116e40b2 Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3000A
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Td (on/off) @ 25°C: 390ns/9.8µs
Switching Energy: 8.5J (on), 18J (off)
Test Condition: 2800V, 3000A, 0.5Ohm, 15V
Gate Charge: 60 µC
Current - Collector (Ic) (Max): 3 kA
Voltage - Collector Emitter Breakdown (Max): 4500 V
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REFLLC500WFULLGANTOBO1 REFLLC500WFULLGANTOBO1 Infineon Technologies Infineon-REF_LLC_500W_FULLGAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c93956f500193ac2faadb4a39 Description: REFLLC500WFULLGANTOBO1
Packaging: Box
Voltage - Output: 22V
Contents: Board(s)
Utilized IC / Part: IGC033S101
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 500W
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AUIRFR2607Z AUIRFR2607Z Infineon Technologies auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a Description: MOSFET N-CH 75V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
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AUIRFR2607ZTRL AUIRFR2607ZTRL Infineon Technologies AUIRFR2607Z.pdf Description: MOSFET N-CH 75V 42A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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BSC0996NSATMA1 BSC0996NSATMA1 Infineon Technologies Infineon-BSC0996NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d26dc516003 Description: MOSFET N-CH 34V 13A TDSON-8-5
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-SNERE2 MB95F696KNPMC-G-SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
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MB95F698KPMC1-G-SNE2 MB95F698KPMC1-G-SNE2 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 52LQFP
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
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MB95F698KWQN-G-SNE1 MB95F698KWQN-G-SNE1 Infineon Technologies download Description: IC MCU 8BIT 60KB FLASH 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-QFN (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Produkt ist nicht verfügbar
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MB95F698KPMC1-G-XXX-UNE2 MB95F698KPMC1-G-XXX-UNE2 Infineon Technologies Description: IC MCU 8BIT FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
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CY95F698KNPMC1-G-UNE2 CY95F698KNPMC1-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 60KB FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-102-SNE2 MB95F696KNPMC-G-102-SNE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 36KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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MB95F698KNPMC-G109SNERE2 MB95F698KNPMC-G109SNERE2 Infineon Technologies Prod_Selector_Guide_11-25-15.pdf Description: IC MCU 8BIT 60KB FLASH 48LQFP
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C9560A-24AXIT CY8C9560A-24AXIT Infineon Technologies Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1TXTMA1 Infineon Technologies AIMCQ120R030M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1TXTMA1 Infineon Technologies AIMCQ120R030M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
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IGC033S101XTMA1 IGC033S101XTMA1 Infineon Technologies Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031 Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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IGC033S101XTMA1 IGC033S101XTMA1 Infineon Technologies Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031 Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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500+2.76 EUR
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IGC037S12S1XTMA1 IGC037S12S1XTMA1 Infineon Technologies infineon-igc037s12s1-datasheet-en.pdf Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
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IGC037S12S1XTMA1 IGC037S12S1XTMA1 Infineon Technologies infineon-igc037s12s1-datasheet-en.pdf Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
Produkt ist nicht verfügbar
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IGC033S10S1XTMA1 IGC033S10S1XTMA1 Infineon Technologies infineon-igc033s10s1-datasheet-en.pdf Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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IGC033S10S1XTMA1 IGC033S10S1XTMA1 Infineon Technologies infineon-igc033s10s1-datasheet-en.pdf Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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EVAL7136U100VGANCTOBO1 EVAL7136U100VGANCTOBO1 Infineon Technologies Infineon-EVAL_7136U_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7136U_gatedriver_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916f67a9bf5897 Description: EVAL BOARD 1EDN7136U IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7136U, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
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EVAL7126G100VGANCTOBO1 EVAL7126G100VGANCTOBO1 Infineon Technologies Infineon-EVAL_7126G_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7126G_gatedrive_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac80191745abf2f574c Description: EVAL BOARD 1EDN7126G IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7126G, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
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REFIBC1600WGANTOBO1 REFIBC1600WGANTOBO1 Infineon Technologies Infineon-Scalable_regulated_intermediate_bus_converter_with_CoolGaN_100_V_power_transistors_REF_IBC_1600W_GAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001936594b9525f7b Description: EVAL BOARD FOR IGC033S10S1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 60V
Contents: Board(s)
Utilized IC / Part: IGC033S10S1
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 1.6kW
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IMCQ120R007M2HXTMA1 IMCQ120R007M2HXTMA1 Infineon Technologies Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243 Description: SICFET N-CH 1200V 257A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 257A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 93A, 18V
Power Dissipation (Max): 1172W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 197.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 8440 pF @ 800 V
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IRF3205ZLPBF IRF3205ZLPBF Infineon Technologies irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
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CY8C4146LDAS273TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
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CY8C4147AZI-S453T CY8C4147AZI-S453T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
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3+8.04 EUR
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100+5.14 EUR
250+4.89 EUR
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TLE49421HALA1 TLE49421HALA1 Infineon Technologies TLE4942-1%2C1C.pdf Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
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MB3793-42PNF-G-JN-ER-6E1 MB3793-42PNF-G-JN-ER-6E1 Infineon Technologies download Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS Inverted
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF9383MTRPBF IRF9383MTRPBF Infineon Technologies irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
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S25FL128SAGMFVR03 S25FL128SAGMFVR03 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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TLE4307D V38 TLE4307D V38 Infineon Technologies TLE4307.pdf Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.8V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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IMDQ75R007M2HXTMA1 IMDQ75R007M2HXTMA1 Infineon Technologies Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
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IMDQ75R007M2HXTMA1 IMDQ75R007M2HXTMA1 Infineon Technologies Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
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IPQC60T010S7XTMA1 IPQC60T010S7XTMA1 Infineon Technologies Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e Description: HIGH POWER_NEW
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22-101
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IPQC60T010S7XTMA1 IPQC60T010S7XTMA1 Infineon Technologies Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
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CY7C1370D-200BGXC CY7C1370D-200BGXC Infineon Technologies CY7C1370%2C72D.pdf Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370D-200BZC CY7C1370D-200BZC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDSBHV210 S25FL512SDSBHV210 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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GS0650146LRMRXUSA1 Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9
GS0650146LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-014-6-LR-MR
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
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GS0650146LRMRXUSA1 Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9
GS0650146LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-014-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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2+8.92 EUR
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GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
GS0650306LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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250+8.24 EUR
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750+7.72 EUR
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GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
GS0650306LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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2+17.48 EUR
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SKB02N60E3266ATMA1 SKB02N60.pdf
SKB02N60E3266ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO263-3-2
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
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SKB02N60ATMA1 SKB02N60.pdf
SKB02N60ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO263-3-2
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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289+1.57 EUR
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GS66516TMRXUSA1
GS66516TMRXUSA1
Hersteller: Infineon Technologies
Description: GS66516T-MR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GS66516TMRXUSA1
GS66516TMRXUSA1
Hersteller: Infineon Technologies
Description: GS66516T-MR
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Produkt ist nicht verfügbar
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GS66516TTRXUMA1 Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea
GS66516TTRXUMA1
Hersteller: Infineon Technologies
Description: GS66516T-TR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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GS66516TTRXUMA1 Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea
GS66516TTRXUMA1
Hersteller: Infineon Technologies
Description: GS66516T-TR
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Produkt ist nicht verfügbar
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IPB023N03LF2SATMA1 infineon-ipb023n03lf2s-datasheet-en.pdf
IPB023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB023N03LF2SATMA1
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Produkt ist nicht verfügbar
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IPB023N03LF2SATMA1 infineon-ipb023n03lf2s-datasheet-en.pdf
IPB023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB023N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TLE9944EQA40XUMA1 Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e
TLE9944EQA40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+3.62 EUR
Mindestbestellmenge: 3000 Stücke
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TLE9944EQW40XUMA1 Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e
TLE9944EQW40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 5
Grade: Automotive
Supplier Device Package: PG-TSDSO-32-1
Core Processor: ARM® Cortex®-M23
Applications: BLDC Controller
Program Memory Type: FLASH (72kB)
Controller Series: TLE9954
Voltage - Supply: 5.5V ~ 29V
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Interface: LINbus, SSC, UART/USART
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BTM9010EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9010EPXUMA1
Hersteller: Infineon Technologies
Description: BTM9010EPXUMA1
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Produkt ist nicht verfügbar
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BTM9010EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9010EPXUMA1
Hersteller: Infineon Technologies
Description: BTM9010EPXUMA1
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.9 EUR
10+2.13 EUR
25+1.94 EUR
100+1.73 EUR
Mindestbestellmenge: 7 Stücke
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CYW20719B2KUMLGT Infineon-CYW20719_AIROC_Bluetooth_Bluetooth_LE_system_on_chip_Enhanced_low_power-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3
CYW20719B2KUMLGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR, GLONASS, GPS
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.4 EUR
10+9.88 EUR
25+9.36 EUR
100+8.63 EUR
250+8.2 EUR
500+7.89 EUR
1000+7.6 EUR
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IR2181PBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFI530NPBF irfi530npbf.pdf?fileId=5546d462533600a401535624411f1f8c
IRFI530NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 12A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 28787 Stücke:
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AnzahlPreis
317+1.42 EUR
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IRF7470TR IRF7470.pdf
IRF7470TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P3000ZL45X168APT8HPSA1 Infineon-P3000ZL45X168-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7f2a768a017facf5116e40b2
P3000ZL45X168APT8HPSA1
Hersteller: Infineon Technologies
Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3000A
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Td (on/off) @ 25°C: 390ns/9.8µs
Switching Energy: 8.5J (on), 18J (off)
Test Condition: 2800V, 3000A, 0.5Ohm, 15V
Gate Charge: 60 µC
Current - Collector (Ic) (Max): 3 kA
Voltage - Collector Emitter Breakdown (Max): 4500 V
auf Bestellung 1 Stücke:
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AnzahlPreis
1+11412.67 EUR
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REFLLC500WFULLGANTOBO1 Infineon-REF_LLC_500W_FULLGAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c93956f500193ac2faadb4a39
REFLLC500WFULLGANTOBO1
Hersteller: Infineon Technologies
Description: REFLLC500WFULLGANTOBO1
Packaging: Box
Voltage - Output: 22V
Contents: Board(s)
Utilized IC / Part: IGC033S101
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 500W
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AnzahlPreis
1+413.6 EUR
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AUIRFR2607Z auirfr2607z.pdf?fileId=5546d462533600a4015355b217bc146a
AUIRFR2607Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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AUIRFR2607ZTRL AUIRFR2607Z.pdf
AUIRFR2607ZTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC0996NSATMA1 Infineon-BSC0996NS-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101598d26dc516003
BSC0996NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 13A TDSON-8-5
Rds On (Max) @ Id, Vgs: 9mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 36KB (36K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 12x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Connectivity: I2C, LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 45
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB95F698KPMC1-G-SNE2 download
MB95F698KPMC1-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Produkt ist nicht verfügbar
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MB95F698KWQN-G-SNE1 download
MB95F698KWQN-G-SNE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 48QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-QFN (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Produkt ist nicht verfügbar
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MB95F698KPMC1-G-XXX-UNE2
MB95F698KPMC1-G-XXX-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY95F698KNPMC1-G-UNE2
CY95F698KNPMC1-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 52LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 52-LQFP (10x10)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 52-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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MB95F696KNPMC-G-102-SNE2 Prod_Selector_Guide_11-25-15.pdf
MB95F696KNPMC-G-102-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 36KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 36KB (36K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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MB95F698KNPMC-G109SNERE2 Prod_Selector_Guide_11-25-15.pdf
MB95F698KNPMC-G109SNERE2
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 60KB FLASH 48LQFP
Number of I/O: 45
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: I2C, LINbus, SIO, UART/USART
Voltage - Supply (Vcc/Vdd): 2.88V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 60KB (60K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C9560A-24AXIT Infineon-CY8C9520A_CY8C9540A_CY8C9560A_20-_40-_and_60-Bit_I_O_Expander_with_EEPROM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd16ae2f29&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY8C9560A-24AXIT
Hersteller: Infineon Technologies
Description: IC XPNDR 100KHZ I2C 100TQFP
Features: EEPROM, POR, PWM, WDT
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 60
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Clock Frequency: 100 kHz
Interrupt Output: Yes
Supplier Device Package: 100-TQFP (14x14)
Current - Output Source/Sink: 10mA, 25mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1T_v1.10_en.pdf
AIMCQ120R030M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
750+11.78 EUR
Mindestbestellmenge: 750 Stücke
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AIMCQ120R030M1TXTMA1 AIMCQ120R030M1T_v1.10_en.pdf
AIMCQ120R030M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+24.25 EUR
10+17.07 EUR
100+14.42 EUR
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IGC033S101XTMA1 Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031
IGC033S101XTMA1
Hersteller: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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IGC033S101XTMA1 Infineon-IGC033S101-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018fa5cc78577031
IGC033S101XTMA1
Hersteller: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-VSON-6-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 4430 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.49 EUR
10+4.28 EUR
100+3.02 EUR
500+2.76 EUR
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IGC037S12S1XTMA1 infineon-igc037s12s1-datasheet-en.pdf
IGC037S12S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
auf Bestellung 1782 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.1 EUR
10+5.34 EUR
100+3.77 EUR
500+3.1 EUR
1000+2.88 EUR
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IGC037S12S1XTMA1 infineon-igc037s12s1-datasheet-en.pdf
IGC037S12S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 120V 19A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 18A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 7mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 60 V
Produkt ist nicht verfügbar
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IGC033S10S1XTMA1 infineon-igc033s10s1-datasheet-en.pdf
IGC033S10S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+2.49 EUR
Mindestbestellmenge: 5000 Stücke
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IGC033S10S1XTMA1 infineon-igc033s10s1-datasheet-en.pdf
IGC033S10S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 21A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
auf Bestellung 6668 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.03 EUR
10+5.3 EUR
100+3.74 EUR
500+3.07 EUR
1000+2.86 EUR
2000+2.75 EUR
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EVAL7136U100VGANCTOBO1 Infineon-EVAL_7136U_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7136U_gatedriver_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801916f67a9bf5897
EVAL7136U100VGANCTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD 1EDN7136U IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7136U, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
auf Bestellung 8 Stücke:
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AnzahlPreis
1+209.62 EUR
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EVAL7126G100VGANCTOBO1 Infineon-EVAL_7126G_100V_GANC_Half-bridge_evaluation_board_with_100V_CoolGaN_power_transistor_and_EiceDRIVER_1EDN7126G_gatedrive_userguide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c914a3ac80191745abf2f574c
EVAL7126G100VGANCTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD 1EDN7126G IGC033S10S1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDN7126G, IGC033S10S1
Primary Attributes: Isolated
Embedded: No
auf Bestellung 3 Stücke:
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AnzahlPreis
1+209.62 EUR
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REFIBC1600WGANTOBO1 Infineon-Scalable_regulated_intermediate_bus_converter_with_CoolGaN_100_V_power_transistors_REF_IBC_1600W_GAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b001936594b9525f7b
REFIBC1600WGANTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IGC033S10S1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 36V ~ 60V
Contents: Board(s)
Utilized IC / Part: IGC033S10S1
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 1.6kW
Produkt ist nicht verfügbar
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IMCQ120R007M2HXTMA1 Infineon-IMCQ120R007M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fae634243
IMCQ120R007M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 257A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 257A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 93A, 18V
Power Dissipation (Max): 1172W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 29.1mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 197.2 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 8440 pF @ 800 V
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+51.68 EUR
10+41.3 EUR
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IRF3205ZLPBF irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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CY8C4146LDAS273TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
Hersteller: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, TRNG, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147AZI-S453T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147AZI-S453T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.04 EUR
10+6.14 EUR
25+5.66 EUR
100+5.14 EUR
250+4.89 EUR
500+4.74 EUR
Mindestbestellmenge: 3 Stücke
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TLE49421HALA1 TLE4942-1%2C1C.pdf
TLE49421HALA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
129+3.52 EUR
Mindestbestellmenge: 129 Stücke
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MB3793-42PNF-G-JN-ER-6E1 download
MB3793-42PNF-G-JN-ER-6E1
Hersteller: Infineon Technologies
Description: IC SUPERVISOR 1 CHANNEL 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS Inverted
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 80ms Minimum
Voltage - Threshold: 4.2V
Supplier Device Package: 8-SOP
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRF9383MTRPBF irf9383mpbf.pdf?fileId=5546d462533600a40153561169a11dab
IRF9383MTRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 22A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 22A, 10V
Power Dissipation (Max): 2.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7305 pF @ 15 V
auf Bestellung 8628 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
186+2.43 EUR
Mindestbestellmenge: 186 Stücke
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S25FL128SAGMFVR03 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFVR03
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4307D V38 TLE4307.pdf
TLE4307D V38
Hersteller: Infineon Technologies
Description: IC REG DL CHRPMP/LINEAR DPAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 25V
Topology: Charge Pump (1), Linear (LDO) (1)
Supplier Device Package: PG-TO252-5-1
Voltage/Current - Output 2: 3.8V, 250mA
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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IMDQ75R007M2HXTMA1 Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c
IMDQ75R007M2HXTMA1
Hersteller: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
Produkt ist nicht verfügbar
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IMDQ75R007M2HXTMA1 Infineon-IMDQ75R007M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c95d1335f0195eb5bad7f665c
IMDQ75R007M2HXTMA1
Hersteller: Infineon Technologies
Description: IMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 131.5A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 28.9mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5922 pF @ 500 V
auf Bestellung 251 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+44.18 EUR
10+33.91 EUR
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IPQC60T010S7XTMA1 Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e
IPQC60T010S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: PG-HDSOP-22-101
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IPQC60T010S7XTMA1 Infineon-IPQC60T010S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c919c9f9d01921e4a0a0e3a3e
IPQC60T010S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
auf Bestellung 740 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+31.13 EUR
10+24.88 EUR
25+23.31 EUR
100+21.59 EUR
250+20.77 EUR
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CY7C1370D-200BGXC CY7C1370%2C72D.pdf
CY7C1370D-200BGXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 119PBGA
Packaging: Tray
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1370D-200BZC download
CY7C1370D-200BZC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL512SDSBHV210 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SDSBHV210
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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