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CY7C1069G30-10BVXIT CY7C1069G30-10BVXIT Infineon Technologies Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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CY7C1061GE30-10BV1XIT CY7C1061GE30-10BV1XIT Infineon Technologies infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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CY7C1061GE30-10BVXIT CY7C1061GE30-10BVXIT Infineon Technologies infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
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CY7C1061GN30-10ZXIT CY7C1061GN30-10ZXIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
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CY7C1069GE30-10ZSXI CY7C1069GE30-10ZSXI Infineon Technologies Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Description: IC SRAM 16MBIT PARALLEL 54TSOP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
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CY7C1061GE30-10ZSXIT CY7C1061GE30-10ZSXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Memory Size: 16Mbit
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CY7C1061GE30-10ZXIT CY7C1061GE30-10ZXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
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CY7C1061GE30-10BV1XI CY7C1061GE30-10BV1XI Infineon Technologies infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
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CY7C1069GN30-10BVXI CY7C1069GN30-10BVXI Infineon Technologies Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
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IPB057N15NM6ATMA1 IPB057N15NM6ATMA1 Infineon Technologies DS_IPB057N15NM6_en.pdf Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB057N15NM6ATMA1 IPB057N15NM6ATMA1 Infineon Technologies DS_IPB057N15NM6_en.pdf Description: TRENCH >=100V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
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100+2.76 EUR
500+2.38 EUR
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CY8C4045FNIT452TXTMA1 Infineon Technologies Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: HMI-GROWTH PSOC4
Packaging: Tube
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PVA1354NSPBF PVA1354NSPBF Infineon Technologies pva13n.pdf?fileId=5546d462533600a401535683928a291e Description: SSR RELAY SPST-NO 375MA 0-100V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-SMD
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 375 mA
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25+14.15 EUR
50+13.66 EUR
100+13.2 EUR
250+12.59 EUR
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IPP08CNE8N G IPP08CNE8N G Infineon Technologies IP%28B%2CI%2CP%2908CNE8N_G.pdf Description: MOSFET N-CH 85V 95A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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CY91F528RSCPMC-GSE2 CY91F528RSCPMC-GSE2 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 115
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
RAM Size: 336K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Operating Temperature: -40°C ~ 105°C (TA)
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CY91F528RSDPMC-GSE2 CY91F528RSDPMC-GSE2 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
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CY91F528RSDEQ-GSE2 Infineon Technologies Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP-EP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
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CY91F528YWCPB-GSE1 CY91F528YWCPB-GSE1 Infineon Technologies download Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
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S25FL256SAGBAEA03 S25FL256SAGBAEA03 Infineon Technologies Infineon-S25FL128S_S25FL256S_Military_128_Mbit_(16_Mbyte)_256_Mbit_(32_Mbyte)_3.0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7bccb7094 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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CYPM1311-48LDXIT CYPM1311-48LDXIT Infineon Technologies Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
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CY3250-LED04QFN Infineon Technologies CY3250_QFN_POD_Kits.pdf Description: ICE POD DEBUG CY8CLED04
Utilized IC / Part: CY3215-DK, CY8CLED04
Accessory Type: Emulator Flex Pod Kit
Packaging: Bulk
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ESD159B1W0201E6327XTSA1 ESD159B1W0201E6327XTSA1 Infineon Technologies infineon-esd159-b1-w0201-datasheet-en.pdf Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
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ESD159B1W0201E6327XTSA1 ESD159B1W0201E6327XTSA1 Infineon Technologies infineon-esd159-b1-w0201-datasheet-en.pdf Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
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IPB020N03LF2SATMA1 IPB020N03LF2SATMA1 Infineon Technologies infineon-ipb020n03lf2s-datasheet-en.pdf Description: IPB020N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB020N03LF2SATMA1 IPB020N03LF2SATMA1 Infineon Technologies infineon-ipb020n03lf2s-datasheet-en.pdf Description: IPB020N03LF2SATMA1
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
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IPM018N10NM5LF2AUMA1 IPM018N10NM5LF2AUMA1 Infineon Technologies infineon-ipm018n10nm5lf2-datasheet-en.pdf Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
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IPM018N10NM5LF2AUMA1 IPM018N10NM5LF2AUMA1 Infineon Technologies infineon-ipm018n10nm5lf2-datasheet-en.pdf Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
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IPF018N10NM5LF2ATMA1 IPF018N10NM5LF2ATMA1 Infineon Technologies Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17 Description: IPF018N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
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IPF018N10NM5LF2ATMA1 IPF018N10NM5LF2ATMA1 Infineon Technologies Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17 Description: IPF018N10NM5LF2ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
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10+7.77 EUR
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IRFP450PBF Infineon Technologies 91233.pdf Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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TLE9185QXWV33XUMA1 TLE9185QXWV33XUMA1 Infineon Technologies Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971 Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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TLE9185QXWV33XUMA1 TLE9185QXWV33XUMA1 Infineon Technologies Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971 Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE9185QXWXUMA1 TLE9185QXWXUMA1 Infineon Technologies Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4 Description: BLDC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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TLE9185QXWXUMA1 TLE9185QXWXUMA1 Infineon Technologies Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4 Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
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TLE9564QXWXUMA1 TLE9564QXWXUMA1 Infineon Technologies Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff Description: BLDC_MOTOR_CONTROL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
auf Bestellung 2500 Stücke:
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TLE9564QXWXUMA1 TLE9564QXWXUMA1 Infineon Technologies Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff Description: BLDC_MOTOR_CONTROL
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.1 EUR
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25+4.93 EUR
100+4.45 EUR
250+4.21 EUR
500+4.08 EUR
1000+3.97 EUR
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TLE95623QXJXUMA1 TLE95623QXJXUMA1 Infineon Technologies Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8 Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE95623QXJXUMA1 TLE95623QXJXUMA1 Infineon Technologies Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8 Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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3+7.66 EUR
10+5.81 EUR
25+5.34 EUR
100+4.83 EUR
250+4.59 EUR
500+4.44 EUR
1000+4.32 EUR
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IGC019S06S1XTMA1 IGC019S06S1XTMA1 Infineon Technologies infineon-igc019s06s1-datasheet-en.pdf Description: GANFET N-CH 60V 27A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
auf Bestellung 2233 Stücke:
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IRF7470TRPBF IRF7470TRPBF Infineon Technologies irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18 description Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF7470TRPBF IRF7470TRPBF Infineon Technologies irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18 description Description: MOSFET N-CH 40V 10A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar
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IRF7468TRPBF IRF7468TRPBF Infineon Technologies irf7468pbf.pdf?fileId=5546d462533600a4015355ff09b41c0e Description: MOSFET N-CH 40V 9.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPDQ60T022S7XTMA1 IPDQ60T022S7XTMA1 Infineon Technologies IPDQ60T022S7.pdf Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
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IPDQ60T022S7XTMA1 IPDQ60T022S7XTMA1 Infineon Technologies IPDQ60T022S7.pdf Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
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IPQC60T022S7AXTMA1 IPQC60T022S7AXTMA1 Infineon Technologies IPQC60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC60T022S7AXTMA1 IPQC60T022S7AXTMA1 Infineon Technologies IPQC60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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1+24.8 EUR
10+19.43 EUR
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IPDQ60T022S7AXTMA1 IPDQ60T022S7AXTMA1 Infineon Technologies IPDQ60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60T022S7AXTMA1 IPDQ60T022S7AXTMA1 Infineon Technologies IPDQ60T022S7A_Rev2.0_11-30-23.pdf Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
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BTS70202EPADAUGHBRDTOBO1 BTS70202EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7020-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3 Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
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IPS50R520CP IPS50R520CP Infineon Technologies IPS50R520CP.pdf Description: MOSFET N-CH 550V 7.1A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-11
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AN983X-AH-T-22 AN983X-AH-T-22 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
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AN983X-AH-T-22 AN983X-AH-T-22 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
Produkt ist nicht verfügbar
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AUIRFR2905ZTR AUIRFR2905ZTR Infineon Technologies auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EVAL2EDGANINV1KWTOBO1 EVAL2EDGANINV1KWTOBO1 Infineon Technologies infineon-ug-2025-07-eval-2edgan-inv-1kw-usermanual-en.pdf Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
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CYPET131XQMA1 CYPET131XQMA1 Infineon Technologies Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96 Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
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IDWD10G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
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IDDD04G65C6XTMA1 IDDD04G65C6XTMA1 Infineon Technologies Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03 Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Bulk
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IRS2117PBF IRS2117PBF Infineon Technologies infineon-irs2117pbf-ds-en.pdf Description: IC GATE DRVR HIGH-SIDE 8DIP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
auf Bestellung 23363 Stücke:
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IRS2117PBF IRS2117PBF Infineon Technologies infineon-irs2117pbf-ds-en.pdf Description: IC GATE DRVR HIGH-SIDE 8DIP
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Produkt ist nicht verfügbar
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CYALKIT-E03 CYALKIT-E03 Infineon Technologies Infineon-CYALKIT-E03_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd8d0313ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EXPANSION PACK FOR CYALKIT-E02
Platform: BLE-Beacon™
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Contents: Board(s)
Type: RF
Function: Bluetooth Low Energy (BLE)
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C1069G30-10BVXIT Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
CY7C1069G30-10BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1061GE30-10BV1XIT infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut
CY7C1061GE30-10BV1XIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVXIT infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut
CY7C1061GE30-10BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1061GN30-10ZXIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1069GE30-10ZSXI Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
CY7C1069GE30-10ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 54TSOP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1061GE30-10ZSXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 54-TSOP II
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Packaging: Tape & Reel (TR)
Memory Size: 16Mbit
Produkt ist nicht verfügbar
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CY7C1061GE30-10ZXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10ZXIT
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-TSOP I
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Produkt ist nicht verfügbar
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CY7C1061GE30-10BV1XI infineon-cy7c1061g-cy7c1061ge-16-mbit-1m-words-x-16-bit-static-ram-with-error-correcting-code-ecc-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&ut
CY7C1061GE30-10BV1XI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Produkt ist nicht verfügbar
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CY7C1069GN30-10BVXI Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1069GN30-10BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 8
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 16Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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IPB057N15NM6ATMA1 DS_IPB057N15NM6_en.pdf
IPB057N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB057N15NM6ATMA1 DS_IPB057N15NM6_en.pdf
IPB057N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 112µA
Power Dissipation (Max): 3.8W (Ta), 211W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 52A, 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 128A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
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AnzahlPrivatkunde
4+6.09 EUR
10+3.97 EUR
100+2.76 EUR
500+2.38 EUR
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CY8C4045FNIT452TXTMA1 Infineon-PSOC4000T_datasheet-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
Hersteller: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tube
Produkt ist nicht verfügbar
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PVA1354NSPBF pva13n.pdf?fileId=5546d462533600a401535683928a291e
PVA1354NSPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 375MA 0-100V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 85°C
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Tube
On-State Resistance (Max): 5 Ohms
Voltage - Load: 0 V ~ 100 V
Supplier Device Package: 8-SMD
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Load Current: 375 mA
auf Bestellung 316 Stücke:
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2+16.62 EUR
10+14.82 EUR
25+14.15 EUR
50+13.66 EUR
100+13.2 EUR
250+12.59 EUR
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IPP08CNE8N G IP%28B%2CI%2CP%2908CNE8N_G.pdf
IPP08CNE8N G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 85V 95A TO220-3
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 130µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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CY91F528RSCPMC-GSE2 download
CY91F528RSCPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
DigiKey Programmable: Not Verified
Number of I/O: 115
Supplier Device Package: 144-LQFP (20x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Processor: FR81S
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External
RAM Size: 336K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Packaging: Tray
Operating Temperature: -40°C ~ 105°C (TA)
Produkt ist nicht verfügbar
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CY91F528RSDPMC-GSE2 download
CY91F528RSDPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F528RSDEQ-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 144-LQFP-EP (20x20)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY91F528YWCPB-GSE1 download
CY91F528YWCPB-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32B 2.0625MB FLSH 416PBGA
Packaging: Tray
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 336K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 416-PBGA (27x27)
Number of I/O: 219
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL256SAGBAEA03 Infineon-S25FL128S_S25FL256S_Military_128_Mbit_(16_Mbyte)_256_Mbit_(32_Mbyte)_3.0V_SPI_Flash_Memory-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7bccb7094
S25FL256SAGBAEA03
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYPM1311-48LDXIT Infineon-EZ-PD_TM_PMG1-S3_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
CYPM1311-48LDXIT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x8/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3250-LED04QFN CY3250_QFN_POD_Kits.pdf
Hersteller: Infineon Technologies
Description: ICE POD DEBUG CY8CLED04
Utilized IC / Part: CY3215-DK, CY8CLED04
Accessory Type: Emulator Flex Pod Kit
Packaging: Bulk
Produkt ist nicht verfügbar
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ESD159B1W0201E6327XTSA1 infineon-esd159-b1-w0201-datasheet-en.pdf
ESD159B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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ESD159B1W0201E6327XTSA1 infineon-esd159-b1-w0201-datasheet-en.pdf
ESD159B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 5GHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 16V (Max)
Supplier Device Package: SG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17V
Voltage - Clamping (Max) @ Ipp: 28.2V (Typ)
Power - Peak Pulse: 112W
Power Line Protection: No
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 infineon-ipb020n03lf2s-datasheet-en.pdf
IPB020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB020N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB020N03LF2SATMA1 infineon-ipb020n03lf2s-datasheet-en.pdf
IPB020N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB020N03LF2SATMA1
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 122A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 80µA
auf Bestellung 790 Stücke:
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4+5.26 EUR
10+3.4 EUR
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IPM018N10NM5LF2AUMA1 infineon-ipm018n10nm5lf2-datasheet-en.pdf
IPM018N10NM5LF2AUMA1
Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Produkt ist nicht verfügbar
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IPM018N10NM5LF2AUMA1 infineon-ipm018n10nm5lf2-datasheet-en.pdf
IPM018N10NM5LF2AUMA1
Hersteller: Infineon Technologies
Description: IPM018N10NM5LF2AUMA1
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOG-4-1
Produkt ist nicht verfügbar
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IPF018N10NM5LF2ATMA1 Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17
IPF018N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Produkt ist nicht verfügbar
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IPF018N10NM5LF2ATMA1 Infineon-IPF018N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d09541231d17
IPF018N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPF018N10NM5LF2ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 259A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 199 Stücke:
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2+11.57 EUR
10+7.77 EUR
100+5.63 EUR
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IRFP450PBF 91233.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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TLE9185QXWV33XUMA1 Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971
TLE9185QXWV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.02 EUR
10+6.06 EUR
25+5.57 EUR
100+5.02 EUR
250+4.76 EUR
500+4.61 EUR
1000+4.49 EUR
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TLE9185QXWV33XUMA1 Infineon-TLE9185QXW%20V33-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8f0deec0971
TLE9185QXWV33XUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-79
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+4.34 EUR
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TLE9185QXWXUMA1 Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4
TLE9185QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE9185QXWXUMA1 Infineon-TLE9185QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194b8ef48fc08d4
TLE9185QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.87 EUR
10+5.19 EUR
25+4.76 EUR
100+4.3 EUR
250+4.08 EUR
500+3.95 EUR
1000+3.83 EUR
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TLE9564QXWXUMA1 Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff
TLE9564QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+3.86 EUR
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TLE9564QXWXUMA1 Infineon-TLE9564QXW-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fb31888d6bff
TLE9564QXWXUMA1
Hersteller: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Voltage - Supply: 3V ~ 28V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 175°C (TJ)
Interface: PWM, SPI
Function: Controller - Speed
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-VQFN-48-79
Voltage - Load: 6V ~ 28V
Technology: NMOS
Applications: General Purpose
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.1 EUR
10+5.36 EUR
25+4.93 EUR
100+4.45 EUR
250+4.21 EUR
500+4.08 EUR
1000+3.97 EUR
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TLE95623QXJXUMA1 Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8
TLE95623QXJXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE95623QXJXUMA1 Infineon-TLE9562-3QXJ-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c88ae21230188dd0123da32e8
TLE95623QXJXUMA1
Hersteller: Infineon Technologies
Description: BLDC_DRIVER_IC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Speed
Current - Output: 250mA
Interface: CAN, LIN, PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 28V
Technology: NMOS
Voltage - Load: 6V ~ 28V
Supplier Device Package: PG-VQFN-48-31
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.66 EUR
10+5.81 EUR
25+5.34 EUR
100+4.83 EUR
250+4.59 EUR
500+4.44 EUR
1000+4.32 EUR
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IGC019S06S1XTMA1 infineon-igc019s06s1-datasheet-en.pdf
IGC019S06S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 60V 27A 6TDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 35A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 12mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 30 V
auf Bestellung 2233 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.44 EUR
10+5.57 EUR
100+3.93 EUR
500+3.36 EUR
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IRF7470TRPBF description irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18
IRF7470TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRF7470TRPBF description irf7470pbf.pdf?fileId=5546d462533600a4015355ff2fe11c18
IRF7470TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar
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IRF7468TRPBF irf7468pbf.pdf?fileId=5546d462533600a4015355ff09b41c0e
IRF7468TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 9.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPDQ60T022S7XTMA1 IPDQ60T022S7.pdf
IPDQ60T022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60T022S7XTMA1 IPDQ60T022S7.pdf
IPDQ60T022S7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.31 EUR
10+19.03 EUR
25+17.72 EUR
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IPQC60T022S7AXTMA1 IPQC60T022S7A_Rev2.0_11-30-23.pdf
IPQC60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC60T022S7AXTMA1 IPQC60T022S7A_Rev2.0_11-30-23.pdf
IPQC60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.8 EUR
10+19.43 EUR
25+18.1 EUR
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IPDQ60T022S7AXTMA1 IPDQ60T022S7A_Rev2.0_11-30-23.pdf
IPDQ60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60T022S7AXTMA1 IPDQ60T022S7A_Rev2.0_11-30-23.pdf
IPDQ60T022S7AXTMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.43mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.8 EUR
10+19.43 EUR
25+18.1 EUR
100+16.62 EUR
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BTS70202EPADAUGHBRDTOBO1 Infineon-BTS7020-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3
BTS70202EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTS7020-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7020-2EPA
auf Bestellung 1 Stücke:
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1+93.33 EUR
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IPS50R520CP IPS50R520CP.pdf
IPS50R520CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 7.1A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO251-3-11
auf Bestellung 1 Stücke:
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1+550.72 EUR
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AN983X-AH-T-22 fundamentals-of-power-semiconductors
AN983X-AH-T-22
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
auf Bestellung 251 Stücke:
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AN983X-AH-T-22 fundamentals-of-power-semiconductors
AN983X-AH-T-22
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Voltage - Supply: 3V ~ 3.6V
Package / Case: 128-BFQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Supplier Device Package: PG-PQFP-128
Produkt ist nicht verfügbar
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AUIRFR2905ZTR auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
AUIRFR2905ZTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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EVAL2EDGANINV1KWTOBO1 infineon-ug-2025-07-eval-2edgan-inv-1kw-usermanual-en.pdf
EVAL2EDGANINV1KWTOBO1
Hersteller: Infineon Technologies
Description: EVAL2EDGANINV1KWTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2ED21064S06J, IGT65R055D2
Secondary Attributes: On-Board Test Points
Embedded: Yes, MCU
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+843.63 EUR
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CYPET131XQMA1 Infineon-CYPET121_131-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8ada5435018ae23edd8b5e96
CYPET131XQMA1
Hersteller: Infineon Technologies
Description: EZ-PD PAGXP-PAGXS PULSE EDGE TRA
Packaging: Tray
Package / Case: 4-DIP (0.315", 8.00mm)
Output Type: PWM
Mounting Type: Through Hole
Output Configuration: Positive
Supplier Device Package: PG-TRDIP-4
Synchronous Rectifier: No
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
auf Bestellung 51 Stücke:
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16+1.36 EUR
22+0.96 EUR
25+0.87 EUR
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IDWD10G120C5XKSA2
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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IDDD04G65C6XTMA1 Infineon-IDDD04G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f749daa0e03
IDDD04G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Bulk
auf Bestellung 4628 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
218+2.5 EUR
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IRS2117PBF infineon-irs2117pbf-ds-en.pdf
IRS2117PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
auf Bestellung 23363 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
146+3.76 EUR
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IRS2117PBF infineon-irs2117pbf-ds-en.pdf
IRS2117PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 75ns, 35ns
Supplier Device Package: 8-PDIP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 290mA, 600mA
Logic Voltage - VIL, VIH: 6V, 9.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
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CYALKIT-E03 Infineon-CYALKIT-E03_Kit_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efd8d0313ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYALKIT-E03
Hersteller: Infineon Technologies
Description: EXPANSION PACK FOR CYALKIT-E02
Platform: BLE-Beacon™
Utilized IC / Part: CYBLE-022001-00, S6AE103A
Contents: Board(s)
Type: RF
Function: Bluetooth Low Energy (BLE)
Packaging: Bulk
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