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CYT4DNJBFCQ1BZSGS CYT4DNJBFCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Produkt ist nicht verfügbar
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CYT4DNJBDCQ1BZSGS CYT4DNJBDCQ1BZSGS Infineon Technologies Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0 Description: TRAVEO-2 CLUST.2.5DGRAPH
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
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XMC1201Q040F0200ABXTMA1 XMC1201Q040F0200ABXTMA1 Infineon Technologies Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0 Description: XMC1000
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 35
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
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XMC1302Q040X0200ABXTMA1 XMC1302Q040X0200ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Number of I/O: 34
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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XMC1403Q040X0200AAXTMA1 XMC1403Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
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XMC1404Q048X0200AAXTMA1 XMC1404Q048X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 34
Supplier Device Package: PG-VQFN-48-73
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
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XMC1403Q064X0200AAXTMA1 XMC1403Q064X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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XMC1404Q064X0200AAXTMA1 XMC1404Q064X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Number of I/O: 48
Supplier Device Package: PG-VQFN-64-6
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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XMC1404Q040X0200AAXTMA1 XMC1404Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XMC1402Q040X0200AAXTMA1 XMC1402Q040X0200AAXTMA1 Infineon Technologies Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: XMC1000
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
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CYW20733A3KFB1GT CYW20733A3KFB1GT Infineon Technologies CYW20733_RevS_11-9-17.pdf Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.91 EUR
10+6.83 EUR
25+6.46 EUR
100+5.95 EUR
250+5.64 EUR
500+5.43 EUR
1000+5.22 EUR
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IMWH170R450M1XKSA1 IMWH170R450M1XKSA1 Infineon Technologies Infineon-IMWH170R450M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bedb61513 Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
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2+14.71 EUR
30+8.48 EUR
120+7.12 EUR
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TC277T64F200SDCLXUMA2 TC277T64F200SDCLXUMA2 Infineon Technologies Infineon-TC27x_DS_Addendum-DataSheet-v01_10-EN.pdf?fileId=5546d4627883d7e00178b64a0d244053 Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
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TC397XP256F300SBDKXUMA2 TC397XP256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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TC397XP256F300SBDKXUMA2 TC397XP256F300SBDKXUMA2 Infineon Technologies Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
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100+86.13 EUR
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IGL65R140D2XUMA1 IGL65R140D2XUMA1 Infineon Technologies infineon-igl65r140d2-datasheet-en.pdf Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
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IGL65R140D2XUMA1 IGL65R140D2XUMA1 Infineon Technologies infineon-igl65r140d2-datasheet-en.pdf Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
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10+4.8 EUR
100+3.36 EUR
500+2.77 EUR
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IGL65R110D2XUMA1 IGL65R110D2XUMA1 Infineon Technologies infineon-igl65r110d2-datasheet-en.pdf Description: GANFET N-CH 650V 16A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGL65R110D2XUMA1 IGL65R110D2XUMA1 Infineon Technologies infineon-igl65r110d2-datasheet-en.pdf Description: GANFET N-CH 650V 16A 8TDFN
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
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500+3.4 EUR
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IGL65R080D2XUMA1 IGL65R080D2XUMA1 Infineon Technologies infineon-igl65r080d2-datasheet-en.pdf Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGL65R080D2XUMA1 IGL65R080D2XUMA1 Infineon Technologies infineon-igl65r080d2-datasheet-en.pdf Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
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2+10.83 EUR
10+7.22 EUR
100+5.18 EUR
500+4.69 EUR
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IGL65R055D2XUMA1 IGL65R055D2XUMA1 Infineon Technologies infineon-igl65r055d2-datasheet-en.pdf Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IGL65R055D2XUMA1 IGL65R055D2XUMA1 Infineon Technologies infineon-igl65r055d2-datasheet-en.pdf Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
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IPW65R040CM8XKSA1 IPW65R040CM8XKSA1 Infineon Technologies Infineon-IPW65R040CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9b8a060d2 Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
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S25FL512SDSBHVC13 S25FL512SDSBHVC13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 64M x 8
Access Time: 6.5 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 750µs
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
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IRG4PC30FPBF IRG4PC30FPBF Infineon Technologies IRSDS10266-1.pdf?t.download=true&u=5oefqw Description: IGBT
Packaging: Bulk
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KP219F1804XTMA1 KP219F1804XTMA1 Infineon Technologies infineon-kp219f1804-datasheet-en.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
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CY7C1370KV25-167BZI CY7C1370KV25-167BZI Infineon Technologies download Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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PEF24470HV1.3 PEF24470HV1.3 Infineon Technologies Description: MTSI-XL SWITCHING
Packaging: Bulk
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1EDI303YASEVALBOARDTOBO1 1EDI303YASEVALBOARDTOBO1 Infineon Technologies infineon-1edi3035-1edi3038as-demoboard-usermanual-en.pdf Description: EVAL BOARD FOR 1EDI3035AS
Embedded: No
Secondary Attributes: On-Board LEDs
Primary Attributes: Isolated
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
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FZ1400R33HE4BPSA1 FZ1400R33HE4BPSA1 Infineon Technologies Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0 Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
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IRF7483MTRPBF IRF7483MTRPBF Infineon Technologies IRSD-S-A0001021909-1.pdf?t.download=true&u=5oefqw Description: IRF7483 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DirectFET™ Isometric MF
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MF
Packaging: Bulk
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CY9BF416RPMC-G-JNE1 CY9BF416RPMC-G-JNE1 Infineon Technologies download Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
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CY9BF416RPMC-GE1 CY9BF416RPMC-GE1 Infineon Technologies download Description: IC MCU 32BIT 512KB 120LQFP
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
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GS0650186LRMRXUSA1 GS0650186LRMRXUSA1 Infineon Technologies Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec Description: GS-065-018-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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GS0650186LRMRXUSA1 GS0650186LRMRXUSA1 Infineon Technologies Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec Description: GS-065-018-6-LR-MR
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
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GS0650116LRMRXUSA1 GS0650116LRMRXUSA1 Infineon Technologies Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6 Description: GS-065-011-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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GS0650116LRMRXUSA1 GS0650116LRMRXUSA1 Infineon Technologies Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6 Description: GS-065-011-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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GS0650146LRMRXUSA1 GS0650146LRMRXUSA1 Infineon Technologies Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9 Description: GS-065-014-6-LR-MR
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
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GS0650146LRMRXUSA1 GS0650146LRMRXUSA1 Infineon Technologies Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9 Description: GS-065-014-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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GS0650306LRMRXUSA1 GS0650306LRMRXUSA1 Infineon Technologies Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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GS0650306LRMRXUSA1 GS0650306LRMRXUSA1 Infineon Technologies Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9 Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
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SKB02N60E3266ATMA1 SKB02N60E3266ATMA1 Infineon Technologies SKB02N60.pdf Description: IGBT NPT 600V 6A TO263-3-2
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
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SKB02N60ATMA1 SKB02N60ATMA1 Infineon Technologies SKB02N60.pdf Description: IGBT NPT 600V 6A TO263-3-2
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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GS66516TMRXUSA1 GS66516TMRXUSA1 Infineon Technologies Description: GS66516T-MR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
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GS66516TMRXUSA1 GS66516TMRXUSA1 Infineon Technologies Description: GS66516T-MR
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Produkt ist nicht verfügbar
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GS66516TTRXUMA1 GS66516TTRXUMA1 Infineon Technologies Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea Description: GS66516T-TR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GS66516TTRXUMA1 GS66516TTRXUMA1 Infineon Technologies Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea Description: GS66516T-TR
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Produkt ist nicht verfügbar
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IPB023N03LF2SATMA1 IPB023N03LF2SATMA1 Infineon Technologies infineon-ipb023n03lf2s-datasheet-en.pdf Description: IPB023N03LF2SATMA1
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
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IPB023N03LF2SATMA1 IPB023N03LF2SATMA1 Infineon Technologies infineon-ipb023n03lf2s-datasheet-en.pdf Description: IPB023N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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10+3.64 EUR
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TLE9944EQA40XUMA1 TLE9944EQA40XUMA1 Infineon Technologies Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
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TLE9944EQW40XUMA1 TLE9944EQW40XUMA1 Infineon Technologies Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e Description: EMBEDDED_POWER
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 5
Grade: Automotive
Supplier Device Package: PG-TSDSO-32-1
Core Processor: ARM® Cortex®-M23
Applications: BLDC Controller
Program Memory Type: FLASH (72kB)
Controller Series: TLE9954
Voltage - Supply: 5.5V ~ 29V
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Interface: LINbus, SSC, UART/USART
Mounting Type: Surface Mount
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BTM9010EPXUMA1 BTM9010EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9010EPXUMA1
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
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BTM9010EPXUMA1 BTM9010EPXUMA1 Infineon Technologies Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f Description: BTM9010EPXUMA1
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
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6+3.64 EUR
10+2.67 EUR
25+2.43 EUR
100+2.17 EUR
250+2.05 EUR
500+1.96 EUR
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CYW20719B2KUMLGT CYW20719B2KUMLGT Infineon Technologies Infineon-CYW20719_AIROC_Bluetooth_Bluetooth_LE_system_on_chip_Enhanced_low_power-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3 Description: IC RF TXRX+MCU 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR, GLONASS, GPS
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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2+13.57 EUR
10+11.76 EUR
25+11.14 EUR
100+10.27 EUR
250+9.76 EUR
500+9.39 EUR
1000+9.04 EUR
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IR2181PBF IR2181PBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFI530NPBF IRFI530NPBF Infineon Technologies irfi530npbf.pdf?fileId=5546d462533600a401535624411f1f8c Description: MOSFET N-CH 100V 12A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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IRF7470TR IRF7470TR Infineon Technologies IRF7470.pdf Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P3000ZL45X168APT8HPSA1 P3000ZL45X168APT8HPSA1 Infineon Technologies Infineon-P3000ZL45X168-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7f2a768a017facf5116e40b2 Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3000A
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Td (on/off) @ 25°C: 390ns/9.8µs
Switching Energy: 8.5J (on), 18J (off)
Test Condition: 2800V, 3000A, 0.5Ohm, 15V
Gate Charge: 60 µC
Current - Collector (Ic) (Max): 3 kA
Voltage - Collector Emitter Breakdown (Max): 4500 V
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1+13581.08 EUR
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REFLLC500WFULLGANTOBO1 REFLLC500WFULLGANTOBO1 Infineon Technologies Infineon-REF_LLC_500W_FULLGAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c93956f500193ac2faadb4a39 Description: REFLLC500WFULLGANTOBO1
Packaging: Box
Voltage - Output: 22V
Contents: Board(s)
Utilized IC / Part: IGC033S101
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 500W
Produkt ist nicht verfügbar
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CYT4DNJBFCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBFCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Produkt ist nicht verfügbar
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CYT4DNJBDCQ1BZSGS Infineon-TRAVEO_T2G_CYT4DN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186f0cceff43fd0
CYT4DNJBDCQ1BZSGS
Hersteller: Infineon Technologies
Description: TRAVEO-2 CLUST.2.5DGRAPH
Speed: 100MHz, 320MHz
Mounting Type: Surface Mount
Package / Case: 327-LFBGA
Packaging: Tray
Number of I/O: 168
Supplier Device Package: 327-FBGA (17x17)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 640K x 8
Program Memory Size: 6.19MB (6.19M x 8)
Produkt ist nicht verfügbar
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XMC1201Q040F0200ABXTMA1 Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0
XMC1201Q040F0200ABXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 35
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Produkt ist nicht verfügbar
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XMC1302Q040X0200ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q040X0200ABXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Number of I/O: 34
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XMC1403Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q040X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 27
Produkt ist nicht verfügbar
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XMC1404Q048X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q048X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 34
Supplier Device Package: PG-VQFN-48-73
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Produkt ist nicht verfügbar
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XMC1403Q064X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q064X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Produkt ist nicht verfügbar
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XMC1404Q064X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q064X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Number of I/O: 48
Supplier Device Package: PG-VQFN-64-6
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XMC1404Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1404Q040X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, LED, POR, PWM, WDT
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XMC1402Q040X0200AAXTMA1 Infineon-XMC1400-DataSheet-v01_06-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0200AAXTMA1
Hersteller: Infineon Technologies
Description: XMC1000
Program Memory Size: 200KB (200K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 40-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of I/O: 27
Supplier Device Package: PG-VQFN-40-13
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Produkt ist nicht verfügbar
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CYW20733A3KFB1GT CYW20733_RevS_11-9-17.pdf
CYW20733A3KFB1GT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 81FBGA
Packaging: Cut Tape (CT)
Package / Case: 81-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 81-FBGA (8x8)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.91 EUR
10+6.83 EUR
25+6.46 EUR
100+5.95 EUR
250+5.64 EUR
500+5.43 EUR
1000+5.22 EUR
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IMWH170R450M1XKSA1 Infineon-IMWH170R450M1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6bedb61513
IMWH170R450M1XKSA1
Hersteller: Infineon Technologies
Description: IMWH170R450M1XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tj)
Rds On (Max) @ Id, Vgs: 390mOhm @ 2A, 15V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Supplier Device Package: PG-TO247-3-U04
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): 15V, 12V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 1000 V
auf Bestellung 480 Stücke:
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2+14.71 EUR
30+8.48 EUR
120+7.12 EUR
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TC277T64F200SDCLXUMA2 Infineon-TC27x_DS_Addendum-DataSheet-v01_10-EN.pdf?fileId=5546d4627883d7e00178b64a0d244053
TC277T64F200SDCLXUMA2
Hersteller: Infineon Technologies
Description: AURIX 1G-PSE
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-292-6
Produkt ist nicht verfügbar
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TC397XP256F300SBDKXUMA2 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
Produkt ist nicht verfügbar
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TC397XP256F300SBDKXUMA2 Infineon-TC39x-DataSheet-v01_02-EN.pdf?fileId=5546d462712ef9b7017140bc3416145f
TC397XP256F300SBDKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 16MB (16M x 8)
RAM Size: 2.52M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Core Size: 32-Bit 10-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-10
auf Bestellung 777 Stücke:
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1+116.82 EUR
10+96.69 EUR
25+91.67 EUR
100+86.13 EUR
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IGL65R140D2XUMA1 infineon-igl65r140d2-datasheet-en.pdf
IGL65R140D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
Produkt ist nicht verfügbar
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IGL65R140D2XUMA1 infineon-igl65r140d2-datasheet-en.pdf
IGL65R140D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 13A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 133 pF @ 400 V
auf Bestellung 1375 Stücke:
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3+7.33 EUR
10+4.8 EUR
100+3.36 EUR
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IGL65R110D2XUMA1 infineon-igl65r110d2-datasheet-en.pdf
IGL65R110D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 16A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGL65R110D2XUMA1 infineon-igl65r110d2-datasheet-en.pdf
IGL65R110D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 16A 8TDFN
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Power Dissipation (Max): 59W (Tc)
auf Bestellung 2488 Stücke:
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3+8.54 EUR
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100+3.97 EUR
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IGL65R080D2XUMA1 infineon-igl65r080d2-datasheet-en.pdf
IGL65R080D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IGL65R080D2XUMA1 infineon-igl65r080d2-datasheet-en.pdf
IGL65R080D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 18A 8TDFN
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): -10V
Supplier Device Package: PG-TSON-8-U06
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Power Dissipation (Max): 81W (Tc)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-TDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2864 Stücke:
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2+10.83 EUR
10+7.22 EUR
100+5.18 EUR
500+4.69 EUR
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IGL65R055D2XUMA1 infineon-igl65r055d2-datasheet-en.pdf
IGL65R055D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
Produkt ist nicht verfügbar
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IGL65R055D2XUMA1 infineon-igl65r055d2-datasheet-en.pdf
IGL65R055D2XUMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 650V 22A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.9A
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-TSON-8-U06
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 400 V
auf Bestellung 1084 Stücke:
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2+12.95 EUR
10+8.71 EUR
100+6.32 EUR
500+5.95 EUR
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IPW65R040CM8XKSA1 Infineon-IPW65R040CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c96250806019626d9b8a060d2
IPW65R040CM8XKSA1
Hersteller: Infineon Technologies
Description: IPW65R040CM8XKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3796 pF @ 400 V
auf Bestellung 210 Stücke:
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2+14.77 EUR
30+8.62 EUR
120+7.26 EUR
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S25FL512SDSBHVC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
S25FL512SDSBHVC13
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tape & Reel (TR)
Memory Organization: 64M x 8
Access Time: 6.5 ns
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 750µs
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 80 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Produkt ist nicht verfügbar
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IRG4PC30FPBF IRSDS10266-1.pdf?t.download=true&u=5oefqw
IRG4PC30FPBF
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Bulk
auf Bestellung 847 Stücke:
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140+3.93 EUR
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KP219F1804XTMA1 infineon-kp219f1804-datasheet-en.pdf
KP219F1804XTMA1
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C1370KV25-167BZI download
CY7C1370KV25-167BZI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PEF24470HV1.3
PEF24470HV1.3
Hersteller: Infineon Technologies
Description: MTSI-XL SWITCHING
Packaging: Bulk
auf Bestellung 1560 Stücke:
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4+122.45 EUR
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1EDI303YASEVALBOARDTOBO1 infineon-1edi3035-1edi3038as-demoboard-usermanual-en.pdf
1EDI303YASEVALBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 1EDI3035AS
Embedded: No
Secondary Attributes: On-Board LEDs
Primary Attributes: Isolated
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Box
auf Bestellung 1 Stücke:
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FZ1400R33HE4BPSA1 Infineon-Bodos_Power_Systems_Modules%20for_traction_converters-Article-v01_00-EN.pdf?fileId=5546d46269e1c019016a96de3a714ec0
FZ1400R33HE4BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1400A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1400A (Typ)
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
auf Bestellung 54 Stücke:
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1+2629.54 EUR
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IRF7483MTRPBF IRSD-S-A0001021909-1.pdf?t.download=true&u=5oefqw
IRF7483MTRPBF
Hersteller: Infineon Technologies
Description: IRF7483 - 12V-300V N-CHANNEL POW
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: DirectFET™ Isometric MF
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MF
Packaging: Bulk
auf Bestellung 3799 Stücke:
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205+2.64 EUR
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CY9BF416RPMC-G-JNE1 download
CY9BF416RPMC-G-JNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Packaging: Tray
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Produkt ist nicht verfügbar
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CY9BF416RPMC-GE1 download
CY9BF416RPMC-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB 120LQFP
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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GS0650186LRMRXUSA1 Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec
GS0650186LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+5.65 EUR
Mindestbestellmenge: 250 Stücke
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GS0650186LRMRXUSA1 Infineon-GS-065-018-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e40492dec
GS0650186LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-018-6-LR-MR
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.5A, 6V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
auf Bestellung 412 Stücke:
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AnzahlPrivatkunde
2+12.73 EUR
10+8.6 EUR
100+6.26 EUR
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GS0650116LRMRXUSA1 Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6
GS0650116LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GS0650116LRMRXUSA1 Infineon-GS-065-011-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3a3d2de6
GS0650116LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-011-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 3.2A, 6V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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GS0650146LRMRXUSA1 Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9
GS0650146LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-014-6-LR-MR
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+4.59 EUR
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GS0650146LRMRXUSA1 Infineon-GS-065-014-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e3d512de9
GS0650146LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-014-6-LR-MR
Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 2.6V @ 3mA
Rds On (Max) @ Id, Vgs: 138mOhm @ 4A, 6V
Current - Continuous Drain (Id) @ 25°C: 15.2A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.61 EUR
10+7.1 EUR
100+5.12 EUR
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GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
GS0650306LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-6-LR-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 750 Stücke:
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AnzahlPrivatkunde
250+9.81 EUR
500+9.22 EUR
750+9.19 EUR
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GS0650306LRMRXUSA1 Infineon-GS-065-030-6-LR-TR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ebd3e5d762df9
GS0650306LRMRXUSA1
Hersteller: Infineon Technologies
Description: GS-065-030-6-LR-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 7.5mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 400 V
auf Bestellung 895 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.8 EUR
10+14.39 EUR
100+11.25 EUR
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SKB02N60E3266ATMA1 SKB02N60.pdf
SKB02N60E3266ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO263-3-2
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
315+1.7 EUR
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SKB02N60ATMA1 SKB02N60.pdf
SKB02N60ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 6A TO263-3-2
Power - Max: 30 W
Current - Collector Pulsed (Icm): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 14 nC
Test Condition: 400V, 2A, 118Ohm, 15V
Switching Energy: 64µJ
Td (on/off) @ 25°C: 20ns/259ns
IGBT Type: NPT
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Reverse Recovery Time (trr): 130 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
289+1.87 EUR
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GS66516TMRXUSA1
GS66516TMRXUSA1
Hersteller: Infineon Technologies
Description: GS66516T-MR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GS66516TMRXUSA1
GS66516TMRXUSA1
Hersteller: Infineon Technologies
Description: GS66516T-MR
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Produkt ist nicht verfügbar
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GS66516TTRXUMA1 Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea
GS66516TTRXUMA1
Hersteller: Infineon Technologies
Description: GS66516T-TR
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GS66516TTRXUMA1 Infineon-GS66516T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e5161d33153ea
GS66516TTRXUMA1
Hersteller: Infineon Technologies
Description: GS66516T-TR
Rds On (Max) @ Id, Vgs: 32mOhm @ 18A, 6V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 6 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +7V, -10V
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs(th) (Max) @ Id: 1.3V @ 14mA
Produkt ist nicht verfügbar
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IPB023N03LF2SATMA1 infineon-ipb023n03lf2s-datasheet-en.pdf
IPB023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB023N03LF2SATMA1
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.92 EUR
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IPB023N03LF2SATMA1 infineon-ipb023n03lf2s-datasheet-en.pdf
IPB023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPB023N03LF2SATMA1
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 119A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.62 EUR
10+3.64 EUR
100+2.51 EUR
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TLE9944EQA40XUMA1 Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e
TLE9944EQA40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+4.31 EUR
Mindestbestellmenge: 3000 Stücke
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TLE9944EQW40XUMA1 Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e
TLE9944EQW40XUMA1
Hersteller: Infineon Technologies
Description: EMBEDDED_POWER
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Number of I/O: 5
Grade: Automotive
Supplier Device Package: PG-TSDSO-32-1
Core Processor: ARM® Cortex®-M23
Applications: BLDC Controller
Program Memory Type: FLASH (72kB)
Controller Series: TLE9954
Voltage - Supply: 5.5V ~ 29V
Operating Temperature: -40°C ~ 175°C (TJ)
RAM Size: 6K x 8
Interface: LINbus, SSC, UART/USART
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BTM9010EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9010EPXUMA1
Hersteller: Infineon Technologies
Description: BTM9010EPXUMA1
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Produkt ist nicht verfügbar
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BTM9010EPXUMA1 Infineon-Infineon-BTM901xEP-DS-v01_00-EN-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912d365ee4326f
BTM9010EPXUMA1
Hersteller: Infineon Technologies
Description: BTM9010EPXUMA1
Qualification: AEC-Q100
Grade: Automotive
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-TSDSO-14
Voltage - Load: 4.5V ~ 40V
Technology: NMOS
Applications: General Purpose
Voltage - Supply: 4.5V ~ 40V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Current - Output: 5.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 2329 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.64 EUR
10+2.67 EUR
25+2.43 EUR
100+2.17 EUR
250+2.05 EUR
500+1.96 EUR
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CYW20719B2KUMLGT Infineon-CYW20719_AIROC_Bluetooth_Bluetooth_LE_system_on_chip_Enhanced_low_power-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3
CYW20719B2KUMLGT
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR, GLONASS, GPS
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.57 EUR
10+11.76 EUR
25+11.14 EUR
100+10.27 EUR
250+9.76 EUR
500+9.39 EUR
1000+9.04 EUR
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IR2181PBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRFI530NPBF irfi530npbf.pdf?fileId=5546d462533600a401535624411f1f8c
IRFI530NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 12A TO220AB FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6.6A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB Full-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 31256 Stücke:
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AnzahlPrivatkunde
317+1.75 EUR
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IRF7470TR IRF7470.pdf
IRF7470TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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P3000ZL45X168APT8HPSA1 Infineon-P3000ZL45X168-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7f2a768a017facf5116e40b2
P3000ZL45X168APT8HPSA1
Hersteller: Infineon Technologies
Description: PRESS PACK IGBT
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3000A
Supplier Device Package: BG-P16826K-1
IGBT Type: Trench
Td (on/off) @ 25°C: 390ns/9.8µs
Switching Energy: 8.5J (on), 18J (off)
Test Condition: 2800V, 3000A, 0.5Ohm, 15V
Gate Charge: 60 µC
Current - Collector (Ic) (Max): 3 kA
Voltage - Collector Emitter Breakdown (Max): 4500 V
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AnzahlPrivatkunde
1+13581.08 EUR
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REFLLC500WFULLGANTOBO1 Infineon-REF_LLC_500W_FULLGAN-UserManual-v01_00-EN.pdf?fileId=8ac78c8c93956f500193ac2faadb4a39
REFLLC500WFULLGANTOBO1
Hersteller: Infineon Technologies
Description: REFLLC500WFULLGANTOBO1
Packaging: Box
Voltage - Output: 22V
Contents: Board(s)
Utilized IC / Part: IGC033S101
Main Purpose: DC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 500W
Produkt ist nicht verfügbar
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