Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148899) > Seite 753 nach 2482

Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 496 744 748 749 750 751 752 753 754 755 756 757 758 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
S29PL032J70BFI073 S29PL032J70BFI073 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29PL032J70BFI073 S29PL032J70BFI073 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 2332 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.19 EUR
10+8.54 EUR
25+8.28 EUR
50+8.09 EUR
100+7.89 EUR
250+7.64 EUR
500+7.45 EUR
1000+7.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY62136EV30LL-45ZSXI CY62136EV30LL-45ZSXI Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.6 EUR
10+6.15 EUR
25+5.97 EUR
40+5.88 EUR
135+5.63 EUR
270+5.5 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62136FV30LL-45ZSXIT CY62136FV30LL-45ZSXIT Infineon Technologies Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62136FV30LL-45ZSXIT CY62136FV30LL-45ZSXIT Infineon Technologies Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.34 EUR
10+5.92 EUR
25+5.74 EUR
50+5.61 EUR
100+5.48 EUR
250+5.3 EUR
500+5.17 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62136EV30LL-45BVXIT CY62136EV30LL-45BVXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+5.11 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
CY62136EV30LL-45BVXIT CY62136EV30LL-45BVXIT Infineon Technologies Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239 Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.6 EUR
10+6.15 EUR
25+5.97 EUR
50+5.83 EUR
100+5.69 EUR
250+5.51 EUR
500+5.38 EUR
1000+5.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62136FV30LL-55ZSXE CY62136FV30LL-55ZSXE Infineon Technologies Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7932TRPBF IRFH7932TRPBF Infineon Technologies irfh7932pbf.pdf?fileId=5546d462533600a40153561f59df1f02 description Description: MOSFET N-CH 30V 24A/104A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
auf Bestellung 4084 Stücke:
Lieferzeit 10-14 Tag (e)
488+0.94 EUR
Mindestbestellmenge: 488
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8337TRPBF IRFH8337TRPBF Infineon Technologies IRFH8337TR2PbF.pdf Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8337TRPBF IRFH8337TRPBF Infineon Technologies IRFH8337TR2PbF.pdf Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH4234TRPBF IRFH4234TRPBF Infineon Technologies irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a Description: MOSFET N-CH 25V 22A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH4234TRPBF IRFH4234TRPBF Infineon Technologies irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a Description: MOSFET N-CH 25V 22A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN7107TR AUIRFN7107TR Infineon Technologies auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436 Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN7107TR AUIRFN7107TR Infineon Technologies auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436 Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3717TRPBF IRF3717TRPBF Infineon Technologies IRF3717PbF.pdf Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3717TRPBF IRF3717TRPBF Infineon Technologies IRF3717PbF.pdf Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R600P7SXKSA1 IPAN70R600P7SXKSA1 Infineon Technologies Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8 Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
100+4.56 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0010XUMA1 TLE4973RE35D5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0010XUMA1 TLE4973RE35D5S0010XUMA1 Infineon Technologies Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 2298 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0001XUMA1 TLE4973RE35D5S0001XUMA1 Infineon Technologies Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6 Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 70A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+12.74 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R030M1XTMA1 AIMBG120R030M1XTMA1 Infineon Technologies 448_AIMBG120R.pdf Description: SICFET N-CH 1200V 70A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.09 EUR
10+17.02 EUR
100+15.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R034M2HXTMA1 IMBG120R034M2HXTMA1 Infineon Technologies Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0 Description: SIC DISCRETE
Packaging: Cut Tape (CT)
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.97 EUR
10+13.47 EUR
100+12.29 EUR
500+8.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies infineon-imbg120r181m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R181M2HXTMA1 IMBG120R181M2HXTMA1 Infineon Technologies infineon-imbg120r181m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.03 EUR
10+5.35 EUR
100+3.82 EUR
500+3.67 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046SICAKLRHALA1 TLE5046SICAKLRHALA1 Infineon Technologies Infineon-TLE5046SIC-AK-LR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fc5c6a0420295 Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDB6HK95N16LOFHOSA1 TDB6HK95N16LOFHOSA1 Infineon Technologies Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33 Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R2K4P7AKMA1 IPU80R2K4P7AKMA1 Infineon Technologies Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185 Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
868+0.57 EUR
Mindestbestellmenge: 868
Im Einkaufswagen  Stück im Wert von  UAH
IRF100PW219XKSA1 IRF100PW219XKSA1 Infineon Technologies Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGI60F270A1LAUMA1 IGI60F270A1LAUMA1 Infineon Technologies Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG9059AM Infineon Technologies Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS01MR12A8MA2BHPSA1 FS01MR12A8MA2BHPSA1 Infineon Technologies Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+3325.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF004BGL-GMJK7E1 CY9AF004BGL-GMJK7E1 Infineon Technologies Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS300R12OE4PNOSA1 FS300R12OE4PNOSA1 Infineon Technologies Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+524.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AN983X-AH-T-21 AN983X-AH-T-21 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7403TR IRF7403TR Infineon Technologies irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP033N03LF2SAKSA1 IPP033N03LF2SAKSA1 Infineon Technologies Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IR3843AMTRPBF IR3843AMTRPBF Infineon Technologies ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP80N08S2L07AKSA1 IPP80N08S2L07AKSA1 Infineon Technologies Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
91+5.02 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IPB065N03LGATMA1 IPB065N03LGATMA1 Infineon Technologies IP%28B%2CP%29065N03LG.pdf Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
333+1.36 EUR
Mindestbestellmenge: 333
Im Einkaufswagen  Stück im Wert von  UAH
KT210 KT210 Infineon Technologies KT%2CKTY.pdf Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
auf Bestellung 73800 Stücke:
Lieferzeit 10-14 Tag (e)
611+0.82 EUR
Mindestbestellmenge: 611
Im Einkaufswagen  Stück im Wert von  UAH
TLF35585QUS01XUMA2 TLF35585QUS01XUMA2 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2136 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.14 EUR
10+9.41 EUR
25+8.73 EUR
100+7.98 EUR
250+7.62 EUR
500+7.4 EUR
1000+7.22 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLF35585QUS01XUMA2 TLF35585QUS01XUMA2 Infineon Technologies Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+4.39 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
IPTG029N13NM6ATMA1 IPTG029N13NM6ATMA1 Infineon Technologies IPTG029N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.7 EUR
10+7.22 EUR
100+5.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PVT322PBF PVT322PBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 7833 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.5 EUR
10+12.02 EUR
25+11.48 EUR
50+11.09 EUR
100+10.71 EUR
250+10.22 EUR
500+9.87 EUR
1000+9.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PVT322S-TPBF PVT322S-TPBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
750+11.38 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
PVT322S-TPBF PVT322S-TPBF Infineon Technologies pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.88 EUR
10+14.15 EUR
25+13.51 EUR
50+13.05 EUR
100+12.6 EUR
250+12.03 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 ISC044N15NM6ATMA1 Infineon Technologies Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
auf Bestellung 3640 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.41 EUR
10+6.77 EUR
100+5.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFA010 S29GL512T10TFA010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11TFA010 S29GL01GS11TFA010 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512N10FFA010 S29GL512N10FFA010 Infineon Technologies Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8, 32M x 16
DigiKey Programmable: Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512S11DHB023 S29GL512S11DHB023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R010M2HXKSA1 IMZA65R010M2HXKSA1 Infineon Technologies Infineon-IMZA65R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b6dff840532 Description: IMZA65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.61 EUR
30+20.02 EUR
120+18.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGT65R035D2ATMA1 IGT65R035D2ATMA1 Infineon Technologies Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGT65R035D2ATMA1 IGT65R035D2ATMA1 Infineon Technologies Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29PL032J70BFI073 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
S29PL032J70BFI073
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29PL032J70BFI073 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
S29PL032J70BFI073
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
auf Bestellung 2332 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.19 EUR
10+8.54 EUR
25+8.28 EUR
50+8.09 EUR
100+7.89 EUR
250+7.64 EUR
500+7.45 EUR
1000+7.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CY62136EV30LL-45ZSXI Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45ZSXI
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+6.15 EUR
25+5.97 EUR
40+5.88 EUR
135+5.63 EUR
270+5.5 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62136FV30LL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY62136FV30LL-45ZSXIT Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62136FV30LL-45ZSXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Cut Tape (CT)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.34 EUR
10+5.92 EUR
25+5.74 EUR
50+5.61 EUR
100+5.48 EUR
250+5.3 EUR
500+5.17 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.11 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
CY62136EV30LL-45BVXIT Infineon-CY62136EV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe8bb23239
CY62136EV30LL-45BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 48VFBGA
Packaging: Cut Tape (CT)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.6 EUR
10+6.15 EUR
25+5.97 EUR
50+5.83 EUR
100+5.69 EUR
250+5.51 EUR
500+5.38 EUR
1000+5.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CY62136FV30LL-55ZSXE Infineon-CY62136FV30_MoBL_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef2bb32ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62136FV30LL-55ZSXE
Hersteller: Infineon Technologies
Description: IC SRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH7932TRPBF description irfh7932pbf.pdf?fileId=5546d462533600a40153561f59df1f02
IRFH7932TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A/104A PQFN
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 3.4W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
auf Bestellung 4084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
488+0.94 EUR
Mindestbestellmenge: 488
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8337TRPBF IRFH8337TR2PbF.pdf
IRFH8337TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH8337TRPBF IRFH8337TR2PbF.pdf
IRFH8337TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A/35A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH4234TRPBF irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a
IRFH4234TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 22A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFH4234TRPBF irfh4234pbf.pdf?fileId=5546d462533600a40153561a75581e8a
IRFH4234TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 22A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 30A
Power Dissipation (Max): 3.5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN7107TR auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436
AUIRFN7107TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFN7107TR auirfn7107.pdf?fileId=5546d462533600a4015355b15a931436
AUIRFN7107TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 14A/75A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
Power Dissipation (Max): 4.4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3001 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3717TRPBF IRF3717PbF.pdf
IRF3717TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3717TRPBF IRF3717PbF.pdf
IRF3717TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPAN70R600P7SXKSA1 Infineon-IPAN70R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015ad1bc3b8a21b8
IPAN70R600P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 8.5A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V
Power Dissipation (Max): 24.9W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+4.56 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35D5S0010XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0010XUMA1 Infineon-TLE4973-RE35x5-S0010-DataSheet-v02_10-EN.pdf?fileId=8ac78c8c8b6555fe018bd3a9afe7609b
TLE4973RE35D5S0010XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 2298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4973RE35D5S0001XUMA1 Infineon-TLE4973_xE35x5_S0001_current_sensors-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8929aa4d018988b389ce50f6
TLE4973RE35D5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Sensor Type: Hall Effect
For Measuring: DC
Supplier Device Package: PG-TDSO-16
Number of Channels: 1
auf Bestellung 1987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
5+5.71 EUR
10+5.46 EUR
25+5.16 EUR
50+4.96 EUR
100+4.77 EUR
500+4.39 EUR
1000+4.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 70A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+12.74 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
AIMBG120R030M1XTMA1 448_AIMBG120R.pdf
AIMBG120R030M1XTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 70A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO263-7-12
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.09 EUR
10+17.02 EUR
100+15.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R034M2HXTMA1 Infineon-IMBG120R034M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191c2210f0527b0
IMBG120R034M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.97 EUR
10+13.47 EUR
100+12.29 EUR
500+8.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R181M2HXTMA1 infineon-imbg120r181m2h-datasheet-en.pdf
IMBG120R181M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMBG120R181M2HXTMA1 infineon-imbg120r181m2h-datasheet-en.pdf
IMBG120R181M2HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1200V 14.9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.2mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
auf Bestellung 869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.03 EUR
10+5.35 EUR
100+3.82 EUR
500+3.67 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TLE5046SICAKLRHALA1 Infineon-TLE5046SIC-AK-LR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fc5c6a0420295
TLE5046SICAKLRHALA1
Hersteller: Infineon Technologies
Description: SPEED SENS
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-1
Output Type: Current
Type: Magnetoresistive
Operating Temperature: -40°C ~ 190°C
Voltage - Supply: 5.2V ~ 20V
Must Operate: 2mT
Actuator Material: Magnet
Grade: Automotive
Frequency: 3 kHz
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TDB6HK95N16LOFHOSA1 Infineon-TXXB6XX95N16XX-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0b84bf754a33
TDB6HK95N16LOFHOSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 75A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R2K4P7AKMA1 Infineon-IPU80R2K4P7-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015cedc9e56d1185
IPU80R2K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 2.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 500 V
auf Bestellung 1339 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
868+0.57 EUR
Mindestbestellmenge: 868
Im Einkaufswagen  Stück im Wert von  UAH
IRF100PW219XKSA1 Infineon-IRF100PW219-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c93dda25b0194d11e9f761e44
IRF100PW219XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 203A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 278µA
Supplier Device Package: PG-TO247-3-U06
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 50 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.2 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGI60F270A1LAUMA1
IGI60F270A1LAUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 270mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CG9059AM
Hersteller: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS01MR12A8MA2BHPSA1
FS01MR12A8MA2BHPSA1
Hersteller: Infineon Technologies
Description: FS01MR12A8MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Vgs(th) (Max) @ Id: 4.55V @ 240mA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3325.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CY9AF004BGL-GMJK7E1
CY9AF004BGL-GMJK7E1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS300R12OE4PNOSA1 Infineon-FS300R12OE4P-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015d5ff1ab4a53be
FS300R12OE4PNOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+524.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AN983X-AH-T-21 fundamentals-of-power-semiconductors
AN983X-AH-T-21
Hersteller: Infineon Technologies
Description: IC PCI TO ETHERNET LAN 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Voltage - Supply: 3V ~ 3.6V
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7403TR irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
IRF7403TR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP033N03LF2SAKSA1 Infineon-IPP033N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc6d352b2a
IPP033N03LF2SAKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
12+1.47 EUR
100+0.98 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IR3843AMTRPBF ir3843am.pdf?fileId=5546d462533600a4015355d557e217ea
IR3843AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 3A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 225kHz ~ 1.32MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.9V
Voltage - Input (Min): 1.5V
Voltage - Output (Min/Fixed): 0.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP80N08S2L07AKSA1 Infineon-IPP_B80N08S2L_07_GREEN-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426e2333ae3&ack=t
IPP80N08S2L07AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+5.02 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
IPB065N03LGATMA1 IP%28B%2CP%29065N03LG.pdf
IPB065N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 30A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 15 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
333+1.36 EUR
Mindestbestellmenge: 333
Im Einkaufswagen  Stück im Wert von  UAH
KT210 KT%2CKTY.pdf
KT210
Hersteller: Infineon Technologies
Description: SENSOR PTC 1KOHM 3% TO92MINI
Packaging: Bulk
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C
Resistance Tolerance: ±3%
Supplier Device Package: TO-92MINI
Resistance @ 25°C: 1 kOhms
auf Bestellung 73800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
611+0.82 EUR
Mindestbestellmenge: 611
Im Einkaufswagen  Stück im Wert von  UAH
TLF35585QUS01XUMA2 Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.14 EUR
10+9.41 EUR
25+8.73 EUR
100+7.98 EUR
250+7.62 EUR
500+7.4 EUR
1000+7.22 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TLF35585QUS01XUMA2 Infineon-TLF35585QUS01-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fc0e8505d
TLF35585QUS01XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPTG029N13NM6ATMA1 IPTG029N13NM6_Rev2.0_10-16-23.pdf
IPTG029N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+4.39 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
IPTG029N13NM6ATMA1 IPTG029N13NM6_Rev2.0_10-16-23.pdf
IPTG029N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 212A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 90A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 179µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 135 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 68 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.7 EUR
10+7.22 EUR
100+5.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PVT322PBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322PBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-DIP
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 7833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.5 EUR
10+12.02 EUR
25+11.48 EUR
50+11.09 EUR
100+10.71 EUR
250+10.22 EUR
500+9.87 EUR
1000+9.53 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322S-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 2250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
750+11.38 EUR
Mindestbestellmenge: 750
Im Einkaufswagen  Stück im Wert von  UAH
PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965
PVT322S-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 170MA 0-250V
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A) x 2
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 170 mA
Approval Agency: UL
Supplier Device Package: 8-SMD
Voltage - Load: 0 V ~ 250 V
On-State Resistance (Max): 10 Ohms
auf Bestellung 2260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.88 EUR
10+14.15 EUR
25+13.51 EUR
50+13.05 EUR
100+12.6 EUR
250+12.03 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018
ISC044N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISC044N15NM6ATMA1 Infineon-ISC044N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a0190774086997018
ISC044N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 75 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 75 V
auf Bestellung 3640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.41 EUR
10+6.77 EUR
100+5.49 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512T10TFA010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T10TFA010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS11TFA010 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11TFA010
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512N10FFA010
S29GL512N10FFA010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8, 32M x 16
DigiKey Programmable: Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL512S11DHB023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL512S11DHB023
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IMZA65R010M2HXKSA1 Infineon-IMZA65R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501926b6dff840532
IMZA65R010M2HXKSA1
Hersteller: Infineon Technologies
Description: IMZA65R010M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.61 EUR
30+20.02 EUR
120+18.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGT65R035D2ATMA1
IGT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGT65R035D2ATMA1
IGT65R035D2ATMA1
Hersteller: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4.2mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 496 744 748 749 750 751 752 753 754 755 756 757 758 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]