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IAUZN04S7N013ATMA2 IAUZN04S7N013ATMA2 Infineon Technologies Infineon-IAUZN04S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ed65f6ad0 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
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11+1.96 EUR
100+1.32 EUR
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BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Infineon Technologies BSC088N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
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BSC088N15LS5ATMA1 BSC088N15LS5ATMA1 Infineon Technologies BSC088N15LS5_Rev2.0_12-13-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
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500+2.56 EUR
1000+2.48 EUR
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IMT40R011M2HXTMA1 IMT40R011M2HXTMA1 Infineon Technologies Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
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IMT40R011M2HXTMA1 IMT40R011M2HXTMA1 Infineon Technologies Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
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CY8CTMA768BUI-13 Infineon Technologies download Description: IC TRUETOUCH CAPSENSE 84BGA
Packaging: Tray
DigiKey Programmable: Not Verified
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DD400S45KL3B5NOSA1 DD400S45KL3B5NOSA1 Infineon Technologies Infineon-DD400S45KL3_B5-DS-v03_00-en_de.pdf?fileId=db3a30433f565836013f6213c07e4b4e Description: DIODE MODULE GP 4500V AIHV130-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-4
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 400 A
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AIMDQ75R040M1HXUMA1 AIMDQ75R040M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179 Description: IGBT
Packaging: Tape & Reel (TR)
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AIMDQ75R040M1HXUMA1 AIMDQ75R040M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179 Description: IGBT
Packaging: Cut Tape (CT)
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IRG4PC50KPBF IRG4PC50KPBF Infineon Technologies fundamentals-of-power-semiconductors description Description: IGBT 600V 52A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 38ns/160ns
Switching Energy: 490µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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CY8C4014SXI-421T CY8C4014SXI-421T Infineon Technologies Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 16KB FLASH 16SOIC
DigiKey Programmable: Not Verified
Number of I/O: 13
Supplier Device Package: 16-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Packaging: Tape & Reel (TR)
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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FF150R12YT3BOMA1 Infineon Technologies Description: IGBT MOD 1200V 200A 625W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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ICE2QR4765ZXKLA1 ICE2QR4765ZXKLA1 Infineon Technologies Infineon-ICE2QR4765Z-DS-v02_01-en.pdf?fileId=db3a304330046413013048a5435f51d2 Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Power (Watts): 31 W
auf Bestellung 1975 Stücke:
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202+2.65 EUR
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TLD11731ETXUMA1 TLD11731ETXUMA1 Infineon Technologies Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d Description: IC LED DVR LIN 400MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD11731ETXUMA1 TLD11731ETXUMA1 Infineon Technologies Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d Description: IC LED DVR LIN 400MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2750 Stücke:
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20+1.09 EUR
25+0.99 EUR
100+0.87 EUR
250+0.81 EUR
500+0.77 EUR
1000+0.75 EUR
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TLD23623ETXUMA1 TLD23623ETXUMA1 Infineon Technologies Infineon-TLD2362-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d228116260 Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD23623ETXUMA1 TLD23623ETXUMA1 Infineon Technologies Infineon-TLD2362-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d228116260 Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2852 Stücke:
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17+1.27 EUR
25+1.15 EUR
100+1.01 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.88 EUR
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TLD23923ETXUMA1 TLD23923ETXUMA1 Infineon Technologies Infineon-TLD2392-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db26dc62c2 Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
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3000+0.87 EUR
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TLD23923ETXUMA1 TLD23923ETXUMA1 Infineon Technologies Infineon-TLD2392-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db26dc62c2 Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
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12+1.87 EUR
16+1.33 EUR
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100+1.06 EUR
250+0.99 EUR
500+0.95 EUR
1000+0.92 EUR
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TLD23723ETXUMA1 TLD23723ETXUMA1 Infineon Technologies Infineon-TLD2372-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d22bc26263 Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD23723ETXUMA1 TLD23723ETXUMA1 Infineon Technologies Infineon-TLD2372-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d22bc26263 Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD23823ETXUMA1 TLD23823ETXUMA1 Infineon Technologies Infineon-TLD2382-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db1e7b62bf Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD23823ETXUMA1 TLD23823ETXUMA1 Infineon Technologies Infineon-TLD2382-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db1e7b62bf Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1904 Stücke:
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12+1.87 EUR
16+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+0.99 EUR
500+0.95 EUR
1000+0.92 EUR
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FD400R33KF2CNOSA1 Infineon Technologies INFNS28312-1.pdf?t.download=true&u=5oefqw Description: FD400R33 - IGBT MODULE
Packaging: Bulk
auf Bestellung 115 Stücke:
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1+3368.99 EUR
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ISZ028N03LF2SATMA1 ISZ028N03LF2SATMA1 Infineon Technologies ISZ028N03LF2SATMA1.pdf Description: ISZ028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ028N03LF2SATMA1 ISZ028N03LF2SATMA1 Infineon Technologies ISZ028N03LF2SATMA1.pdf Description: ISZ028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ025N06NM6ATMA1 ISZ025N06NM6ATMA1 Infineon Technologies infineon-isz025n06nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
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ISZ023N06LM6ATMA1 ISZ023N06LM6ATMA1 Infineon Technologies infineon-isz023n06lm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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TLE9261BQXV33XUMA2 TLE9261BQXV33XUMA2 Infineon Technologies Infineon-TLE9261BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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TLE9262BQXV33XUMA2 TLE9262BQXV33XUMA2 Infineon Technologies Infineon-TLE9262BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc80160978ee4293957 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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TLE9262BQXXUMA2 TLE9262BQXXUMA2 Infineon Technologies Infineon-TLE9262BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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TLE92613BQXV33XUMA2 TLE92613BQXV33XUMA2 Infineon Technologies Infineon-TLE9261-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757f18f3924 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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TZ860N16KOFHPSA2 TZ860N16KOFHPSA2 Infineon Technologies Infineon-TZ860N16KOF-DS-v03_01-en_de.pdf?fileId=5546d461464245d3014666920b4f60e9 Description: SCR MODULE 1.6KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 860 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.6 kV
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T1220N26T1CS01XPSA1 Infineon Technologies Description: Discrete Power Modules
Packaging: Bulk
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FF33MR12W1M1HB11BPSA1 FF33MR12W1M1HB11BPSA1 Infineon Technologies Infineon-FF33MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a01882011f43473fd Description: MOSFET
Packaging: Tray
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FF33MR12W1M1HPB11BPSA1 FF33MR12W1M1HPB11BPSA1 Infineon Technologies Infineon-FF33MR12W1M1HP_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a018820124f137409 Description: MOSFET
Packaging: Tray
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TZ425N18KOFHPSA1 TZ425N18KOFHPSA1 Infineon Technologies Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d Description: SCR MODULE 1.8KV 800A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 510 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TD425N16KOFXPSA1 TD425N16KOFXPSA1 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.6KV 800A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TD425N18KOFXPSA1 TD425N18KOFXPSA1 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.8KV 800A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TT425N18KOFXPSA1 TT425N18KOFXPSA1 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.8KV 800A MODULE
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
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TT425N14KOFHPSA2 TT425N14KOFHPSA2 Infineon Technologies Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9 Description: SCR MODULE 1.4KV 800A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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TZ425N14KOFHPSA1 TZ425N14KOFHPSA1 Infineon Technologies Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d Description: SCR MODULE 1.4KV 800A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 510 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TD425N12KOFS01HPSA1 Infineon Technologies Description: SCR MODULE 1.2KV 800A MODULE
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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S70KS1282GABHV023 S70KS1282GABHV023 Infineon Technologies Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Description: IC PSRAM 128MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: PG-BGA-24-801
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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CY7C185-15VC CY7C185-15VC Infineon Technologies CY7C185.pdf Description: IC SRAM 64KBIT PARALLEL 28SOJ
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 28-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TLE4973A075T5S0001XUMA1 TLE4973A075T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
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TLE4973A075T5S0001XUMA1 TLE4973A075T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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5+9.59 EUR
10+9.2 EUR
25+8.72 EUR
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500+7.68 EUR
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TLE4973A120T5S0001XUMA1 TLE4973A120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973A120T5S0001XUMA1 TLE4973A120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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500+7.98 EUR
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IPT023N10NM5LF2ATMA1 IPT023N10NM5LF2ATMA1 Infineon Technologies Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3 Description: IPT023N10NM5LF2ATMA1
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IPT023N10NM5LF2ATMA1 IPT023N10NM5LF2ATMA1 Infineon Technologies Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3 Description: IPT023N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
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100+5.85 EUR
500+5.5 EUR
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IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 Infineon Technologies Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf Description: IPB021N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 Infineon Technologies Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf Description: IPB021N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 3970 Stücke:
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AUIRF4905L AUIRF4905L Infineon Technologies INFN-S-A0002298946-1.pdf?t.download=true&u=5oefqw Description: AUIRF4905 - 20V-150V P-CHANNEL A
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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CY7C1472V33-200AXC CY7C1472V33-200AXC Infineon Technologies Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1426JV18-300BZC CY7C1426JV18-300BZC Infineon Technologies CY7C1411%2C13%2C15%2C26JV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
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CY7C1548KV18-400BZC CY7C1548KV18-400BZC Infineon Technologies Infineon-CY7C1548KV18_CY7C1550KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.0_Cycle_Read_Latency)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec171943639&utm_source=cypress&utm_medium=referral&utm_campaign= Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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ESD959B1W0201E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2B75CADQ0AZEGS CYT2B75CADQ0AZEGS Infineon Technologies Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2 Description: TVII-B-E-1M-100 CFLASH 1MB
Number of I/O: 74
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+/M4F
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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90+15.3 EUR
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T2351N52TOHXPSA1 T2351N52TOHXPSA1 Infineon Technologies T2351N.pdf Description: SCR MODULE 5.2KV 3530A TO-200AF
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 3530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3110 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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IAUZN04S7N013ATMA2 Infineon-IAUZN04S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ed65f6ad0
IAUZN04S7N013ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
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BSC088N15LS5ATMA1 BSC088N15LS5_Rev2.0_12-13-23.pdf
BSC088N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
Produkt ist nicht verfügbar
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BSC088N15LS5ATMA1 BSC088N15LS5_Rev2.0_12-13-23.pdf
BSC088N15LS5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 46A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 107µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 75 V
auf Bestellung 4864 Stücke:
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4+6.91 EUR
10+4.51 EUR
100+3.14 EUR
500+2.56 EUR
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IMT40R011M2HXTMA1 Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398
IMT40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
Produkt ist nicht verfügbar
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IMT40R011M2HXTMA1 Infineon-IMT40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f581c74973398
IMT40R011M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
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CY8CTMA768BUI-13 download
Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 84BGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 2463 Stücke:
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35+17.26 EUR
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DD400S45KL3B5NOSA1 Infineon-DD400S45KL3_B5-DS-v03_00-en_de.pdf?fileId=db3a30433f565836013f6213c07e4b4e
DD400S45KL3B5NOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 4500V AIHV130-4
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: A-IHV130-4
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 400 A
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1+2074.42 EUR
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AIMDQ75R040M1HXUMA1 Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179
AIMDQ75R040M1HXUMA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AIMDQ75R040M1HXUMA1 Infineon-AIMDQ75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b60e0cfbc2179
AIMDQ75R040M1HXUMA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Cut Tape (CT)
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1+21.44 EUR
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IRG4PC50KPBF description fundamentals-of-power-semiconductors
IRG4PC50KPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 52A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 38ns/160ns
Switching Energy: 490µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 52 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 104 A
Power - Max: 200 W
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CY8C4014SXI-421T Infineon-PSoC_4_PSoC_4000_Family_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc2b7d45ee&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4014SXI-421T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 16KB FLASH 16SOIC
DigiKey Programmable: Not Verified
Number of I/O: 13
Supplier Device Package: 16-SOIC
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Packaging: Tape & Reel (TR)
Core Size: 32-Bit Single-Core
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar
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FF150R12YT3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 625W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 625 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: 2 Independent
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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ICE2QR4765ZXKLA1 Infineon-ICE2QR4765Z-DS-v02_01-en.pdf?fileId=db3a304330046413013048a5435f51d2
ICE2QR4765ZXKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Power (Watts): 31 W
auf Bestellung 1975 Stücke:
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202+2.65 EUR
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TLD11731ETXUMA1 Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d
TLD11731ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 400MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD11731ETXUMA1 Infineon-TLD1173-1ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d2232c625d
TLD11731ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 400MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 36V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 400mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q100
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14+1.55 EUR
20+1.09 EUR
25+0.99 EUR
100+0.87 EUR
250+0.81 EUR
500+0.77 EUR
1000+0.75 EUR
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TLD23623ETXUMA1 Infineon-TLD2362-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d228116260
TLD23623ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD23623ETXUMA1 Infineon-TLD2362-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d228116260
TLD23623ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2852 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.78 EUR
17+1.27 EUR
25+1.15 EUR
100+1.01 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.88 EUR
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TLD23923ETXUMA1 Infineon-TLD2392-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db26dc62c2
TLD23923ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.87 EUR
Mindestbestellmenge: 3000 Stücke
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TLD23923ETXUMA1 Infineon-TLD2392-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db26dc62c2
TLD23923ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
16+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+0.99 EUR
500+0.95 EUR
1000+0.92 EUR
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TLD23723ETXUMA1 Infineon-TLD2372-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d22bc26263
TLD23723ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD23723ETXUMA1 Infineon-TLD2372-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2d22bc26263
TLD23723ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLD23823ETXUMA1 Infineon-TLD2382-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db1e7b62bf
TLD23823ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Tape & Reel (TR)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TLD23823ETXUMA1 Infineon-TLD2382-3ET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2db1e7b62bf
TLD23823ETXUMA1
Hersteller: Infineon Technologies
Description: IC LED DVR LIN 150MA PGTFDSO161
Packaging: Cut Tape (CT)
Package / Case: 16-TFSOP, 16-MSOP (0.118", 3.00mm Width) Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 3
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 150mA
Internal Switch(s): No
Supplier Device Package: PG-TFDSO-16-1
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 36V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1904 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
16+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+0.99 EUR
500+0.95 EUR
1000+0.92 EUR
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FD400R33KF2CNOSA1 INFNS28312-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FD400R33 - IGBT MODULE
Packaging: Bulk
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3368.99 EUR
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ISZ028N03LF2SATMA1 ISZ028N03LF2SATMA1.pdf
ISZ028N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISZ028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ028N03LF2SATMA1 ISZ028N03LF2SATMA1.pdf
ISZ028N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISZ028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Produkt ist nicht verfügbar
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ISZ025N06NM6ATMA1 infineon-isz025n06nm6-datasheet-en.pdf
ISZ025N06NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Produkt ist nicht verfügbar
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ISZ023N06LM6ATMA1 infineon-isz023n06lm6-datasheet-en.pdf
ISZ023N06LM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
Produkt ist nicht verfügbar
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TLE9261BQXV33XUMA2 Infineon-TLE9261BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927
TLE9261BQXV33XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE9262BQXV33XUMA2 Infineon-TLE9262BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc80160978ee4293957
TLE9262BQXV33XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE9262BQXXUMA2 Infineon-TLE9262BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68
TLE9262BQXXUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE92613BQXV33XUMA2 Infineon-TLE9261-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757f18f3924
TLE92613BQXV33XUMA2
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TZ860N16KOFHPSA2 Infineon-TZ860N16KOF-DS-v03_01-en_de.pdf?fileId=5546d461464245d3014666920b4f60e9
TZ860N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 860 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.6 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+743.56 EUR
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T1220N26T1CS01XPSA1
Hersteller: Infineon Technologies
Description: Discrete Power Modules
Packaging: Bulk
Produkt ist nicht verfügbar
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FF33MR12W1M1HB11BPSA1 Infineon-FF33MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a01882011f43473fd
FF33MR12W1M1HB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tray
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+74.38 EUR
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FF33MR12W1M1HPB11BPSA1 Infineon-FF33MR12W1M1HP_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8779172a018820124f137409
FF33MR12W1M1HPB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tray
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+93.64 EUR
30+63.61 EUR
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TZ425N18KOFHPSA1 Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d
TZ425N18KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 800A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 510 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TD425N16KOFXPSA1 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TD425N16KOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 800A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TD425N18KOFXPSA1 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TD425N18KOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 800A MODULE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TT425N18KOFXPSA1 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TT425N18KOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 800A MODULE
Package / Case: Module
Packaging: Tray
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
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TT425N14KOFHPSA2 Infineon-TT425N-DS-v03_10-en_de.pdf?fileId=db3a304412b407950112b42f7bf84bc9
TT425N14KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 800A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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TZ425N14KOFHPSA1 Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d
TZ425N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 800A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 510 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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TD425N12KOFS01HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 800A MODULE
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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S70KS1282GABHV023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
S70KS1282GABHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: PG-BGA-24-801
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C185-15VC CY7C185.pdf
CY7C185-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOJ
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 28-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TLE4973A075T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A075T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TLE4973A075T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A075T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2440 Stücke:
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AnzahlPrivatkunde
2+10.69 EUR
5+9.59 EUR
10+9.2 EUR
25+8.72 EUR
50+8.4 EUR
100+8.1 EUR
500+7.68 EUR
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TLE4973A120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A120T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973A120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A120T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2485 Stücke:
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2+11.06 EUR
5+9.96 EUR
10+9.54 EUR
25+9.06 EUR
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100+8.41 EUR
500+7.98 EUR
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IPT023N10NM5LF2ATMA1 Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3
IPT023N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPT023N10NM5LF2ATMA1
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IPT023N10NM5LF2ATMA1 Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3
IPT023N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPT023N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
auf Bestellung 1209 Stücke:
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2+12.09 EUR
10+8.1 EUR
100+5.85 EUR
500+5.5 EUR
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IPB021N10NM5LF2ATMA1 Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf
IPB021N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPB021N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 3000 Stücke:
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1000+5.96 EUR
2000+5.63 EUR
3000+5.46 EUR
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IPB021N10NM5LF2ATMA1 Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf
IPB021N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPB021N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
auf Bestellung 3970 Stücke:
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2+15.41 EUR
10+10.4 EUR
100+7.56 EUR
500+6.34 EUR
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AUIRF4905L INFN-S-A0002298946-1.pdf?t.download=true&u=5oefqw
AUIRF4905L
Hersteller: Infineon Technologies
Description: AUIRF4905 - 20V-150V P-CHANNEL A
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1077 Stücke:
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CY7C1472V33-200AXC Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
CY7C1472V33-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 2 Stücke:
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1+99.02 EUR
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CY7C1426JV18-300BZC CY7C1411%2C13%2C15%2C26JV18.pdf
CY7C1426JV18-300BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
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CY7C1548KV18-400BZC Infineon-CY7C1548KV18_CY7C1550KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.0_Cycle_Read_Latency)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec171943639&utm_source=cypress&utm_medium=referral&utm_campaign=
CY7C1548KV18-400BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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1+140.93 EUR
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ESD959B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2B75CADQ0AZEGS Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2
CYT2B75CADQ0AZEGS
Hersteller: Infineon Technologies
Description: TVII-B-E-1M-100 CFLASH 1MB
Number of I/O: 74
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+/M4F
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 388 Stücke:
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1+22.66 EUR
10+17.79 EUR
90+15.3 EUR
180+14.79 EUR
270+14.54 EUR
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T2351N52TOHXPSA1 T2351N.pdf
T2351N52TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 5.2KV 3530A TO-200AF
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 3530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3110 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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