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FP50R07N2E4B11BPSA1 Infineon Technologies Infineon-FP50R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a3043315daf4401316137fedf41f0 Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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OPTIGATRUSTADAPTERTOBO1 OPTIGATRUSTADAPTERTOBO1 Infineon Technologies Infineon-OPTIGA_Trust_Adapter_UserGuide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d1019038911a2d3567 Description: EVAL BOARD
Type: Interface
Function: Adapter Board
Packaging: Box
Platform: Arduino
Utilized IC / Part: OPTIGA Trust
Contents: Board(s)
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CY8C4149AZSS558XQLA1 CY8C4149AZSS558XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 100LQFP
Program Memory Size: 384KB (384K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 84
Grade: Automotive
Supplier Device Package: 100-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
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IRGP6640D-EPBF IRGP6640D-EPBF Infineon Technologies IRGP6640DPbF%2C-EPbF.pdf Description: IGBT 600V 53A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 90µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 40ns/100ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRGP6630DPBF IRGP6630DPBF Infineon Technologies IRGP6630DPbF%2C-EPbF.pdf Description: IGBT 600V 47A TO-247AC
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 192 W
Current - Collector Pulsed (Icm): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 47 A
Gate Charge: 30 nC
Test Condition: 400V, 18A, 22Ohm, 15V
Switching Energy: 75µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 40ns/95ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
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IRGP6640DPBF IRGP6640DPBF Infineon Technologies IRGP6640DPbF%2C-EPbF.pdf Description: IGBT 600V 53A TO-247AC
Power - Max: 200 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 300µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/100ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRGP6650DPBF IRGP6650DPBF Infineon Technologies IRGP6650DPbF%2C-EPbF.pdf Description: IGBT 600V 80A TO-247AC
Power - Max: 306 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 75 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 300µJ (on), 630µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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CY8C21334-24PVXAT CY8C21334-24PVXAT Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 20SSOP
DigiKey Programmable: Verified
Number of I/O: 16
Supplier Device Package: 20-SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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CY7C68003-20FNXI CY7C68003-20FNXI Infineon Technologies CY7C68003.pdf Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
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IAUCN04S7N024DATMA1 IAUCN04S7N024DATMA1 Infineon Technologies Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044 Description: MOSFET_(20V 40V)
Grade: Automotive
Supplier Device Package: PG-TDSON-8-60
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 72W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Qualification: AEC-Q101
Packaging: Tape & Reel (TR)
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IAUCN04S7N024DATMA1 IAUCN04S7N024DATMA1 Infineon Technologies Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044 Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-60
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 72W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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10+2.17 EUR
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500+1.22 EUR
1000+1.1 EUR
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CYPAP111A3-10SXQ CYPAP111A3-10SXQ Infineon Technologies Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294 Description: PRIMARY SIDE STARTUP CONTROLLER
Internal Switch(s): No
Frequency - Switching: 30kHz
Duty Cycle: 70%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width)
Packaging: Tube
Control Features: Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: 10-SOIC
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 500V
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97+1.06 EUR
194+1.01 EUR
291+0.98 EUR
582+0.95 EUR
1067+0.92 EUR
2522+0.89 EUR
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IRS2108SPBF IRS2108SPBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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CY37064P44-125AC CY37064P44-125AC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 44TQFP
Package / Case: 44-LQFP
Packaging: Bag
DigiKey Programmable: Not Verified
Number of I/O: 37
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP (10x10)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
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CY37064P44-125JXC CY37064P44-125JXC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 44PLCC
DigiKey Programmable: Verified
Number of I/O: 37
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.61x16.61)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Packaging: Tube
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CY37064P44-125AXC CY37064P44-125AXC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 44TQFP
Packaging: Tray
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP (10x10)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 44-LQFP
DigiKey Programmable: Verified
Number of I/O: 37
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CY37064P84-125JC CY37064P84-125JC Infineon Technologies Ultra%20370000%20CPLD%20Family.pdf Description: IC CPLD 64MC 10NS 84PLCC
DigiKey Programmable: Not Verified
Number of I/O: 69
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 84-PLCC (29.31x29.31)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Packaging: Tube
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AIMCQ120R160M1TXTMA1 AIMCQ120R160M1TXTMA1 Infineon Technologies AIMCQ120R160M1T_v1.10_en.pdf Description: SIC_DISCRETE
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Mounting Type: Surface Mount
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AIMCQ120R160M1TXTMA1 AIMCQ120R160M1TXTMA1 Infineon Technologies AIMCQ120R160M1T_v1.10_en.pdf Description: SIC_DISCRETE
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
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IM12B20EC1XKMA1 IM12B20EC1XKMA1 Infineon Technologies Infineon-IM12B20EC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868d7af232a Description: IGBT IPM 1.2KV 30A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 1.2 kV
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IAUMN10S5N016GATMA1 Infineon Technologies Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
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IR2131JTRPBF IR2131JTRPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tape & Reel (TR)
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IR2131JTRPBF IR2131JTRPBF Infineon Technologies ir2131.pdf?fileId=5546d462533600a4015355c882d7169d Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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100+10.7 EUR
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IM64D130AXTMA1 IM64D130AXTMA1 Infineon Technologies Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198 Description: XENSIV - IM64D130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 1.62 V ~ 3.6 V
Current - Supply: 1.4 A
Voltage - Rated: 1.8 V
Grade: Automotive
Height (Max): 0.043" (1.08mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -36dB ±1dB @ 94dB SPL
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Output Type: Digital, PDM
Packaging: Tape & Reel (TR)
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IM64D130AXTMA1 IM64D130AXTMA1 Infineon Technologies Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198 Description: XENSIV - IM64D130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 1.62 V ~ 3.6 V
Current - Supply: 1.4 A
Voltage - Rated: 1.8 V
Grade: Automotive
Height (Max): 0.043" (1.08mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -36dB ±1dB @ 94dB SPL
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Output Type: Digital, PDM
Packaging: Cut Tape (CT)
auf Bestellung 4958 Stücke:
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8+2.2 EUR
10+1.8 EUR
25+1.65 EUR
50+1.56 EUR
100+1.46 EUR
250+1.38 EUR
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CY8C4125PVS-482ZT CY8C4125PVS-482ZT Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati Description: IC MCU 32BIT 32KB FLASH 28SSOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 24
Grade: Automotive
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CG8968AMT Infineon Technologies Description: CG8968AMT
DigiKey Programmable: Not Verified
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C2270KV18-550BZXC CY7C2270KV18-550BZXC Infineon Technologies Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665 Description: IC SRAM 36MBIT PARALLEL 165FBGA
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
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CY7C1565KV18-550BZXC CY7C1565KV18-550BZXC Infineon Technologies Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY14B256KA-SP25XIT CY14B256KA-SP25XIT Infineon Technologies Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 256KBIT PAR 48SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-SSOP
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S25FL128LAGNFB013 S25FL128LAGNFB013 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
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IRFP4868PBF IRFP4868PBF Infineon Technologies IRSDS19316-1.pdf?t.download=true&u=5oefqw Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
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T1040N20TOFVTXPSA1 Infineon Technologies T1040N.pdf Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
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D2450N07TXPSA1 D2450N07TXPSA1 Infineon Technologies Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
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6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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6EDL04N065PRXUMA1 6EDL04N065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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50+2.54 EUR
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1EDI3035ASXUMA1 1EDI3035ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
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1EDI3035ASXUMA1 1EDI3035ASXUMA1 Infineon Technologies 1EDI3020ASXUMA1.pdf Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
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IDDD06G65C6XTMA1 Infineon Technologies Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09 Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
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IDDD12G65C6XTMA1 IDDD12G65C6XTMA1 Infineon Technologies Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2 Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
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AUIRF1010Z AUIRF1010Z Infineon Technologies auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
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BC847CE6433HTMA1 BC847CE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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SIDC56D60E6X1SA1 Infineon Technologies SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7 Description: DIODE STD 600V 150A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IQFH47N04NM6ATMA1 IQFH47N04NM6ATMA1 Infineon Technologies Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Tape & Reel (TR)
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IQFH47N04NM6ATMA1 IQFH47N04NM6ATMA1 Infineon Technologies Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b Description: TRENCH <= 40V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
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IGB110S10S1XTMA1 Infineon Technologies Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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AUIRLS3034 AUIRLS3034 Infineon Technologies AUIRLS3034.pdf Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
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ISC800P06LMATMA1 ISC800P06LMATMA1 Infineon Technologies Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
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ISC800P06LMATMA1 ISC800P06LMATMA1 Infineon Technologies Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
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SAF-XE164H-96F66L AC SAF-XE164H-96F66L AC Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XE164K96F66LACFXUMA1 XE164K96F66LACFXUMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
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XE164K96F66LACFXQMA1 XE164K96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
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XC228796F66LACKXUMA1 XC228796F66LACKXUMA1 Infineon Technologies Infineon-XC228X-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40937b40162&ack=t Description: IC MCU 16/32B 768KB FLSH 144LQFP
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
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XE164G96F66LACFXQMA1 XE164G96F66LACFXQMA1 Infineon Technologies XE164_V2.1_Aug2008.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
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XE164H96F66LACFXQMA1 XE164H96F66LACFXQMA1 Infineon Technologies XE164_ds_v2.1_2008_08.pdf Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
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CY9AF344LAQN-G-AVE2 CY9AF344LAQN-G-AVE2 Infineon Technologies Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
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AUIRG4PC40S-E AUIRG4PC40S-E Infineon Technologies auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517 Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
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1EDI3025ASXUMA1 1EDI3025ASXUMA1 Infineon Technologies Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487 Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
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1EDI3025ASXUMA1 1EDI3025ASXUMA1 Infineon Technologies Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487 Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
auf Bestellung 424 Stücke:
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3+7.6 EUR
10+5.78 EUR
25+5.33 EUR
100+4.82 EUR
250+4.58 EUR
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S26KL512SDABHB030 S26KL512SDABHB030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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FP50R07N2E4B11BPSA1 Infineon-FP50R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a3043315daf4401316137fedf41f0
Hersteller: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2B-411
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 70 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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OPTIGATRUSTADAPTERTOBO1 Infineon-OPTIGA_Trust_Adapter_UserGuide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c901008d1019038911a2d3567
OPTIGATRUSTADAPTERTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD
Type: Interface
Function: Adapter Board
Packaging: Box
Platform: Arduino
Utilized IC / Part: OPTIGA Trust
Contents: Board(s)
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1+94.16 EUR
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CY8C4149AZSS558XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149AZSS558XQLA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 100LQFP
Program Memory Size: 384KB (384K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 84
Grade: Automotive
Supplier Device Package: 100-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Produkt ist nicht verfügbar
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IRGP6640D-EPBF IRGP6640DPbF%2C-EPbF.pdf
IRGP6640D-EPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 53A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 90µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 40ns/100ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP6630DPBF IRGP6630DPbF%2C-EPbF.pdf
IRGP6630DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 47A TO-247AC
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 192 W
Current - Collector Pulsed (Icm): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 47 A
Gate Charge: 30 nC
Test Condition: 400V, 18A, 22Ohm, 15V
Switching Energy: 75µJ (on), 350µJ (off)
Td (on/off) @ 25°C: 40ns/95ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
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IRGP6640DPBF IRGP6640DPbF%2C-EPbF.pdf
IRGP6640DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 53A TO-247AC
Power - Max: 200 W
Current - Collector Pulsed (Icm): 72 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 53 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 300µJ (on), 840µJ (off)
Td (on/off) @ 25°C: 40ns/100ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 70 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IRGP6650DPBF IRGP6650DPbF%2C-EPbF.pdf
IRGP6650DPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 80A TO-247AC
Power - Max: 306 W
Current - Collector Pulsed (Icm): 105 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 75 nC
Test Condition: 400V, 35A, 10Ohm, 15V
Switching Energy: 300µJ (on), 630µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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CY8C21334-24PVXAT download
CY8C21334-24PVXAT
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20SSOP
DigiKey Programmable: Verified
Number of I/O: 16
Supplier Device Package: 20-SSOP
Peripherals: POR, PWM, WDT
Connectivity: I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Data Converters: A/D 28x8b
Core Processor: M8C
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY7C68003-20FNXI CY7C68003.pdf
CY7C68003-20FNXI
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 20WLCSP
Packaging: Tray
Package / Case: 20-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Number of Drivers/Receivers: 1/1
Protocol: USB 2.0
Supplier Device Package: 20-WLCSP (2.14x1.76)
Duplex: Full
Produkt ist nicht verfügbar
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IAUCN04S7N024DATMA1 Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044
IAUCN04S7N024DATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Grade: Automotive
Supplier Device Package: PG-TDSON-8-60
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 72W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Qualification: AEC-Q101
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUCN04S7N024DATMA1 Infineon-IAUCN04S7N024D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca501927583bfe71044
IAUCN04S7N024DATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-60
Vgs(th) (Max) @ Id: 3V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 2.49mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2067pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 72W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1880 Stücke:
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AnzahlPreis
6+3.38 EUR
10+2.17 EUR
100+1.51 EUR
500+1.22 EUR
1000+1.1 EUR
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CYPAP111A3-10SXQ Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294
CYPAP111A3-10SXQ
Hersteller: Infineon Technologies
Description: PRIMARY SIDE STARTUP CONTROLLER
Internal Switch(s): No
Frequency - Switching: 30kHz
Duty Cycle: 70%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-SOP (0.154", 3.90mm Width)
Packaging: Tube
Control Features: Frequency Control, Soft Start
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: 10-SOIC
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Topology: Flyback, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 500V
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AnzahlPreis
10+1.83 EUR
14+1.33 EUR
97+1.06 EUR
194+1.01 EUR
291+0.98 EUR
582+0.95 EUR
1067+0.92 EUR
2522+0.89 EUR
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IRS2108SPBF IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS2108SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
auf Bestellung 55 Stücke:
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AnzahlPreis
7+2.92 EUR
10+2.16 EUR
25+1.96 EUR
Mindestbestellmenge: 7 Stücke
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CY37064P44-125AC Ultra%20370000%20CPLD%20Family.pdf
CY37064P44-125AC
Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 44TQFP
Package / Case: 44-LQFP
Packaging: Bag
DigiKey Programmable: Not Verified
Number of I/O: 37
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP (10x10)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CY37064P44-125JXC Ultra%20370000%20CPLD%20Family.pdf
CY37064P44-125JXC
Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 44PLCC
DigiKey Programmable: Verified
Number of I/O: 37
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 44-PLCC (16.61x16.61)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Packaging: Tube
Produkt ist nicht verfügbar
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CY37064P44-125AXC Ultra%20370000%20CPLD%20Family.pdf
CY37064P44-125AXC
Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 44TQFP
Packaging: Tray
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 44-TQFP (10x10)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 44-LQFP
DigiKey Programmable: Verified
Number of I/O: 37
Produkt ist nicht verfügbar
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CY37064P84-125JC Ultra%20370000%20CPLD%20Family.pdf
CY37064P84-125JC
Hersteller: Infineon Technologies
Description: IC CPLD 64MC 10NS 84PLCC
DigiKey Programmable: Not Verified
Number of I/O: 69
Voltage Supply - Internal: 4.75V ~ 5.25V
Supplier Device Package: 84-PLCC (29.31x29.31)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 64
Programmable Type: In-System Reprogrammable™ (ISR™) CMOS
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Packaging: Tube
Produkt ist nicht verfügbar
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AIMCQ120R160M1TXTMA1 AIMCQ120R160M1T_v1.10_en.pdf
AIMCQ120R160M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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AIMCQ120R160M1TXTMA1 AIMCQ120R160M1T_v1.10_en.pdf
AIMCQ120R160M1TXTMA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: N-Channel
auf Bestellung 600 Stücke:
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AnzahlPreis
2+12.27 EUR
10+8.35 EUR
100+6.45 EUR
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IM12B20EC1XKMA1 Infineon-IM12B20EC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868d7af232a
IM12B20EC1XKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 1.2KV 30A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 1.2 kV
auf Bestellung 272 Stücke:
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AnzahlPreis
1+51.39 EUR
14+40.49 EUR
28+38.73 EUR
112+36.09 EUR
252+34.96 EUR
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IAUMN10S5N016GATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2131JTRPBF ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR2131JTRPBF ir2131.pdf?fileId=5546d462533600a4015355c882d7169d
IR2131JTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 80ns, 40ns
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 481 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.21 EUR
10+12.6 EUR
25+11.7 EUR
100+10.7 EUR
250+10.23 EUR
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IM64D130AXTMA1 Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198
IM64D130AXTMA1
Hersteller: Infineon Technologies
Description: XENSIV - IM64D130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 1.62 V ~ 3.6 V
Current - Supply: 1.4 A
Voltage - Rated: 1.8 V
Grade: Automotive
Height (Max): 0.043" (1.08mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -36dB ±1dB @ 94dB SPL
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Output Type: Digital, PDM
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IM64D130AXTMA1 Infineon-IM64D130A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8eeb092c018f0b8b10921198
IM64D130AXTMA1
Hersteller: Infineon Technologies
Description: XENSIV - IM64D130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 1.62 V ~ 3.6 V
Current - Supply: 1.4 A
Voltage - Rated: 1.8 V
Grade: Automotive
Height (Max): 0.043" (1.08mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -36dB ±1dB @ 94dB SPL
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Output Type: Digital, PDM
Packaging: Cut Tape (CT)
auf Bestellung 4958 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.2 EUR
10+1.8 EUR
25+1.65 EUR
50+1.56 EUR
100+1.46 EUR
250+1.38 EUR
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CY8C4125PVS-482ZT Infineon-Automotive_PSoC_4_PSoC_4100_Family_Programmable_System-on-Chip_(PSoC_)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed973a95b0d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integrati
CY8C4125PVS-482ZT
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Number of I/O: 24
Grade: Automotive
Supplier Device Package: 28-SSOP
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b SAR; D/A 2xIDAC
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CG8968AMT
Hersteller: Infineon Technologies
Description: CG8968AMT
DigiKey Programmable: Not Verified
Packaging: Bulk
Produkt ist nicht verfügbar
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CY7C2270KV18-550BZXC Infineon-CY7C2268KV18_CY7C2270KV18_36-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec197363665
CY7C2270KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 1M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Produkt ist nicht verfügbar
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CY7C1565KV18-550BZXC Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1565KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY14B256KA-SP25XIT Infineon-CY14B256KA_256-Kbit_(32_K_8)_nvSRAM_with_Real_Time_Clock-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd912f303f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B256KA-SP25XIT
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 25 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Supplier Device Package: 48-SSOP
Produkt ist nicht verfügbar
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S25FL128LAGNFB013 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL128LAGNFB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 8-WSON (5x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Produkt ist nicht verfügbar
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IRFP4868PBF IRSDS19316-1.pdf?t.download=true&u=5oefqw
IRFP4868PBF
Hersteller: Infineon Technologies
Description: IRFP4868 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 42A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10774 pF @ 50 V
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
133+4.63 EUR
Mindestbestellmenge: 133 Stücke
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T1040N20TOFVTXPSA1 T1040N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 2200A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1040 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 2200 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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D2450N07TXPSA1 Infineon-D2450N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd8012863a4b431538d
D2450N07TXPSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 700V 2450A
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2450A
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 700 V
Produkt ist nicht verfügbar
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6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+2.05 EUR
Mindestbestellmenge: 3000 Stücke
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6EDL04N065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04N065PRXUMA1
Hersteller: Infineon Technologies
Description: 6EDL04N065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+2.96 EUR
10+2.82 EUR
25+2.66 EUR
50+2.54 EUR
100+2.44 EUR
500+2.23 EUR
1000+2.16 EUR
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1EDI3035ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3035ASXUMA1
Hersteller: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3035ASXUMA1 1EDI3020ASXUMA1.pdf
1EDI3035ASXUMA1
Hersteller: Infineon Technologies
Description: 1EDI3035ASXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 20V
Qualification: AEC-Q100
auf Bestellung 432 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.04 EUR
10+4.57 EUR
25+4.2 EUR
100+3.79 EUR
250+3.6 EUR
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IDDD06G65C6XTMA1 Infineon-IDDD06G65C6-DS-v02_00-EN.pdf?fileId=5546d462625a528f01628f86ff8c0e09
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 18A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Current - Average Rectified (Io): 18A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
auf Bestellung 543 Stücke:
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AnzahlPreis
233+2.16 EUR
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IDDD12G65C6XTMA1 Infineon-Selection_guide_CoolSiC_Silicon_Carbide_Schottky_diodes-SG-v05_00-EN.pdf?fileId=db3a3043399628450139b0701a1d21d2
IDDD12G65C6XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
auf Bestellung 5200 Stücke:
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AnzahlPreis
121+4.19 EUR
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AUIRF1010Z auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364
AUIRF1010Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BC847CE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC847CE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5369+0.09 EUR
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SIDC56D60E6X1SA1 SIDC56D60E6_L4223M.pdf?folderId=db3a304412b407950112b436e1b366f6&fileId=db3a304412b407950112b436e23366f7
Hersteller: Infineon Technologies
Description: DIODE STD 600V 150A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 150A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IQFH47N04NM6ATMA1 Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b
IQFH47N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+3.52 EUR
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IQFH47N04NM6ATMA1 Infineon-IQFH47N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904de8dede050b
IQFH47N04NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSON-12-1
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 507A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 13300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 221 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.03 EUR
10+6.02 EUR
100+4.32 EUR
500+3.59 EUR
1000+3.52 EUR
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IGB110S10S1XTMA1
Hersteller: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 5V
Power Dissipation (Max): 2.5W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
Produkt ist nicht verfügbar
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AUIRLS3034 AUIRLS3034.pdf
AUIRLS3034
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISC800P06LMATMA1 Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2
ISC800P06LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
Produkt ist nicht verfügbar
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ISC800P06LMATMA1 Infineon-ISC800P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4c89536f2
ISC800P06LMATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.6A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 724µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
auf Bestellung 4594 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.64 EUR
11+1.68 EUR
100+1.13 EUR
500+0.89 EUR
1000+0.81 EUR
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SAF-XE164H-96F66L AC XE164_V2.1_Aug2008.pdf
SAF-XE164H-96F66L AC
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XE164K96F66LACFXUMA1 XE164_V2.1_Aug2008.pdf
XE164K96F66LACFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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XE164K96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164K96F66LACFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar
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XC228796F66LACKXUMA1 Infineon-XC228X-DS-v02_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40937b40162&ack=t
XC228796F66LACKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 768KB FLSH 144LQFP
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 118
Supplier Device Package: PG-LQFP-144-4
Peripherals: DMA, I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16/32-Bit
Data Converters: A/D 24x10b
Produkt ist nicht verfügbar
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XE164G96F66LACFXQMA1 XE164_V2.1_Aug2008.pdf
XE164G96F66LACFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
Core Size: 16-Bit
Data Converters: A/D 11x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-3
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Produkt ist nicht verfügbar
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XE164H96F66LACFXQMA1 XE164_ds_v2.1_2008_08.pdf
XE164H96F66LACFXQMA1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 768KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 75
Supplier Device Package: PG-LQFP-100-8
Peripherals: I2S, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: C166SV2
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 82K x 8
Program Memory Size: 768KB (768K x 8)
Speed: 66MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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CY9AF344LAQN-G-AVE2
CY9AF344LAQN-G-AVE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 51
Produkt ist nicht verfügbar
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AUIRG4PC40S-E auirg4pc40s-e.pdf?fileId=5546d462533600a4015355ba2a1c1517
AUIRG4PC40S-E
Hersteller: Infineon Technologies
Description: IGBT 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 31A
Supplier Device Package: PG-TO247-3
Td (on/off) @ 25°C: 22ns/650ns
Switching Energy: 450µJ (on), 6.5mJ (off)
Test Condition: 480V, 31A, 10Ohm, 15V
Gate Charge: 150 nC
Grade: Automotive
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 160 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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1EDI3025ASXUMA1 Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487
1EDI3025ASXUMA1
Hersteller: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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1EDI3025ASXUMA1 Infineon-1EDI3025AS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190886944052487
1EDI3025ASXUMA1
Hersteller: Infineon Technologies
Description: BTM9011EPXUMA1
Packaging: Cut Tape (CT)
Package / Case: 20-BFSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Current - Peak Output: 20A
Technology: Magnetic Coupling
Current - Output High, Low: 20A, 20A
Voltage - Isolation: 5700Vrms
Approval Agency: IEC/EN/DIN, UL, VDE
Supplier Device Package: PG-DSO-20-91
Rise / Fall Time (Typ): 35ns, 45ns (Max)
Common Mode Transient Immunity (Min): 150kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 3V ~ 5.5V, 13.5V ~ 17V
Qualification: AEC-Q100
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+7.6 EUR
10+5.78 EUR
25+5.33 EUR
100+4.82 EUR
250+4.58 EUR
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S26KL512SDABHB030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHB030
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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