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CY2DL814ZXI CY2DL814ZXI Infineon Technologies cy2dl814_8.pdf Description: IC CLK BUFFER 1:4 400MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 400 MHz
Produkt ist nicht verfügbar
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BC857SH6827XTSA1 BC857SH6827XTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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BC857SH6827XTSA1 BC857SH6827XTSA1 Infineon Technologies bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
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SPOC2DBBTS712204ESATOBO1 SPOC2DBBTS712204ESATOBO1 Infineon Technologies Description: SPOC-2 DB BTS71220-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESA
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BTS71202EPADAUGHBRDTOBO1 BTS71202EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7120-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d462636cc8fb016421dc08d31138 Description: BTS7120-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7120-2EPA
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T880N16TOFXPSA1 T880N16TOFXPSA1 Infineon Technologies Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8 Description: SCR MODULE 1800V 1750A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 880 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1750 A
Voltage - Off State: 1.8 kV
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FS225R12OE4BOSA1 FS225R12OE4BOSA1 Infineon Technologies Infineon-FS225R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff90136ab5334d94ca0 Description: IGBT MOD 1200V 350A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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XMC7100-E272K4160AA XMC7100-E272K4160AA Infineon Technologies Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415 Description: IC MCU 32BIT 4.06MB 272LFBGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 207
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPD60R650CEAUMA1 IPD60R650CEAUMA1 Infineon Technologies Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55 Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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100+0.75 EUR
500+0.67 EUR
1000+0.63 EUR
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CY7C65620-56LFXCT CY7C65620-56LFXCT Infineon Technologies download Description: IC USB HUB CTRLR 2PORT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS11FHB020 S29GL01GS11FHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BB644E7904HTSA1 BB644E7904HTSA1 Infineon Technologies bb644_bb664series.pdf Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
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IRS21531DPBF IRS21531DPBF Infineon Technologies IRSDS08244-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
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DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5 Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
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FP15R12W1T7B3BOMA1 FP15R12W1T7B3BOMA1 Infineon Technologies Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
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FP15R12W1T7B11BOMA1 FP15R12W1T7B11BOMA1 Infineon Technologies Infineon-FP15R12W1T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d462700c0ae6017057c6ba956751 Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
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PTFA191001EV4R250XTMA1 PTFA191001EV4R250XTMA1 Infineon Technologies PTFA191001E_F.pdf Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
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PTFA191001EV4XWSA1 PTFA191001EV4XWSA1 Infineon Technologies PTFA191001E_F.pdf Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
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PTFA212001F/1 P4 PTFA212001F/1 P4 Infineon Technologies fundamentals-of-power-semiconductors Description: RF MOSFET LDMOS 30V H-37260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-37260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
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FZ2400R12HE4B9HOSA2 FZ2400R12HE4B9HOSA2 Infineon Technologies Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d Description: IGBT MODULE 1200V 3560A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
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IDB15E60ATMA1 IDB15E60ATMA1 Infineon Technologies Infineon-IDB15E60-DS-v02_04-en.pdf?fileId=db3a304412b407950112b438c7b86b98 Description: DIODE GP 600V 29.2A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IRL3705ZPBF IRL3705ZPBF Infineon Technologies irl3705zpbf.pdf?fileId=5546d462533600a40153565f3a192536 description Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
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IRFR3910TRLPBF IRFR3910TRLPBF Infineon Technologies irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df Description: MOSFET N-CH 100V 16A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
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IPF021N13NM6ATMA1 IPF021N13NM6ATMA1 Infineon Technologies IPF021N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPF021N13NM6ATMA1 IPF021N13NM6ATMA1 Infineon Technologies IPF021N13NM6_Rev2.0_10-16-23.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
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ICE2PCS06GXUMA1 ICE2PCS06GXUMA1 Infineon Technologies ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77 Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
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AUIRL3705Z AUIRL3705Z Infineon Technologies auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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CY7C0853AV-100BBC CY7C0853AV-100BBC Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB60R210CFD7ATMA1 IPB60R210CFD7ATMA1 Infineon Technologies Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0 Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
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IPB60R210CFD7ATMA1 IPB60R210CFD7ATMA1 Infineon Technologies Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0 Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 990 Stücke:
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S25FL128SAGNFA003 S25FL128SAGNFA003 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FL128SAGNFA003 S25FL128SAGNFA003 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IRGS4B60KD1TRRP IRGS4B60KD1TRRP Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
Produkt ist nicht verfügbar
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CY7C1360C-166AXCT CY7C1360C-166AXCT Infineon Technologies download Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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REFXDPS2201170WBPA2TOBO1 REFXDPS2201170WBPA2TOBO1 Infineon Technologies Infineon-XPDS2201_AC_DC_reference_design_170W_with_XDP_digital_power-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c85ecb347018617383f5b1dcc Description: REFXDPS2201170WBPA2TOBO1
Packaging: Box
Function: Battery Charger
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XDPS2201
Embedded: No
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2EP130RXTMA1 2EP130RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
Produkt ist nicht verfügbar
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2EP130RXTMA1 2EP130RXTMA1 Infineon Technologies Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1 Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
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IFS150B12N3E4B31BOSA1 Infineon Technologies Infineon-IFS150B12N3E4_B31-DS-v02_00-en_de.pdf?fileId=db3a3043293a15c4012945dd402a53c1 Description: IGBT MOD 1200V 300A 750W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
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IFS150B12N3E4B31BOSA1 Infineon Technologies Infineon-IFS150B12N3E4_B31-DS-v02_00-en_de.pdf?fileId=db3a3043293a15c4012945dd402a53c1 Description: IGBT MOD 1200V 300A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Produkt ist nicht verfügbar
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IFS150B12N3E4PB11BPSA1 Infineon Technologies Description: IGBT MOD 1200V 300A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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CYPD2122-24LQXI CYPD2122-24LQXI Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
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AIMDQ75R020M1HXUMA1 AIMDQ75R020M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca Description: AIMDQ75R020M1HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R020M1HXUMA1 AIMDQ75R020M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca Description: AIMDQ75R020M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 559 Stücke:
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1+25.20 EUR
10+20.07 EUR
100+17.80 EUR
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2ED2388S06FXUMA1 2ED2388S06FXUMA1 Infineon Technologies Infineon-2ED2388S06F-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6b9ef614f9 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Produkt ist nicht verfügbar
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CY8C4146LQS-S263 CY8C4146LQS-S263 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S263 CY8C4147LQS-S263 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147LQS-S265T CY8C4147LQS-S265T Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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CY8C4147AZS-S265T CY8C4147AZS-S265T Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16, 20x10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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CY8C4147LQSS265UXQSA1 CY8C4147LQSS265UXQSA1 Infineon Technologies Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8 Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PROF2BTS70061EPPDBTOBO1 PROF2BTS70061EPPDBTOBO1 Infineon Technologies Description: PROF_2 BTS7006-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7006-1EPP
Platform: Arduino
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IKP08N65F5XKSA1 IKP08N65F5XKSA1 Infineon Technologies DS_IKP08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9bac1de5da9 Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
auf Bestellung 494 Stücke:
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5+4.01 EUR
50+1.96 EUR
100+1.76 EUR
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IAUMN08S5N013GAUMA1 Infineon Technologies Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1990 Stücke:
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10+4.95 EUR
25+4.55 EUR
100+4.11 EUR
250+3.90 EUR
500+3.78 EUR
1000+3.67 EUR
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IAUMN08S5N013GAUMA1 Infineon Technologies Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c Description: MOSFET_(75V 120V(
Packaging: Tray
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
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BAT2402ELSE6327XTSA1 BAT2402ELSE6327XTSA1 Infineon Technologies Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92 Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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IPT60R037CM8XTMA1 IPT60R037CM8XTMA1 Infineon Technologies Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c Description: IPT60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R037CM8XTMA1 IPT60R037CM8XTMA1 Infineon Technologies Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c Description: IPT60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
auf Bestellung 1460 Stücke:
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S25FS256SAGMFI000 S25FS256SAGMFI000 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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3+6.64 EUR
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25+5.99 EUR
50+5.85 EUR
240+5.54 EUR
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S25FS256SAGBHI203 S25FS256SAGBHI203 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FS256SAGBHI203 S25FS256SAGBHI203 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2394 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.10 EUR
10+8.08 EUR
25+7.70 EUR
50+7.43 EUR
100+7.17 EUR
250+6.84 EUR
500+6.59 EUR
1000+6.36 EUR
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CY2DL814ZXI cy2dl814_8.pdf
CY2DL814ZXI
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:4 400MHZ 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVDS
Type: Fanout Buffer (Distribution)
Input: LVDS, LVPECL, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-TSSOP
Frequency - Max: 400 MHz
Produkt ist nicht verfügbar
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BC857SH6827XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
BC857SH6827XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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BC857SH6827XTSA1 bc856s_bc856u_bc857s.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca38901154200fdcd16ef
BC857SH6827XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 45V 0.1A PG-SOT363-PO
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-PO
auf Bestellung 18000 Stücke:
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Anzahl Preis
5887+0.08 EUR
Mindestbestellmenge: 5887
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SPOC2DBBTS712204ESATOBO1
SPOC2DBBTS712204ESATOBO1
Hersteller: Infineon Technologies
Description: SPOC-2 DB BTS71220-4ESA
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS71220-4ESA
auf Bestellung 3 Stücke:
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Anzahl Preis
1+117.11 EUR
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BTS71202EPADAUGHBRDTOBO1 Infineon-BTS7120-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d462636cc8fb016421dc08d31138
BTS71202EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTS7120-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7120-2EPA
Produkt ist nicht verfügbar
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T880N16TOFXPSA1 Infineon-T880N-DS-v01_00-en_de.pdf?fileId=db3a304323b87bc20123ffb85bf75bf8
T880N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1750A DO200AB
Packaging: Bulk
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 880 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1750 A
Voltage - Off State: 1.8 kV
auf Bestellung 4 Stücke:
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Anzahl Preis
2+266.60 EUR
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FS225R12OE4BOSA1 Infineon-FS225R12OE4-DS-v03_01-en_de.pdf?fileId=db3a304336797ff90136ab5334d94ca0
FS225R12OE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 350A 1250W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
auf Bestellung 4 Stücke:
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Anzahl Preis
1+492.64 EUR
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XMC7100-E272K4160AA Infineon-XMC-7100-Datasheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8412f8d30184443160ae4415
XMC7100-E272K4160AA
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4.06MB 272LFBGA
Packaging: Tray
Package / Case: 272-LFBGA
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 272-BGA (16x16)
Number of I/O: 207
Produkt ist nicht verfügbar
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
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IPD60R650CEAUMA1 Infineon-IPA60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c851db3d1f55
IPD60R650CEAUMA1
Hersteller: Infineon Technologies
Description: CONSUMER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
auf Bestellung 1971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
18+1.00 EUR
100+0.75 EUR
500+0.67 EUR
1000+0.63 EUR
Mindestbestellmenge: 11
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CY7C65620-56LFXCT download
CY7C65620-56LFXCT
Hersteller: Infineon Technologies
Description: IC USB HUB CTRLR 2PORT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Function: Hub Controller
Interface: USB
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.15V ~ 3.45V
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 56-QFN (8x8)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL01GS11FHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11FHB020
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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BB644E7904HTSA1 bb644_bb664series.pdf
BB644E7904HTSA1
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
Produkt ist nicht verfügbar
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IRS21531DPBF description IRSDS08244-1.pdf?t.download=true&u=5oefqw
IRS21531DPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.4V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
auf Bestellung 6044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.41 EUR
Mindestbestellmenge: 143
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DF23MR12W1M1PB11BPSA1 Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5
DF23MR12W1M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+133.50 EUR
Mindestbestellmenge: 4
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FP15R12W1T7B3BOMA1 Infineon-FP15R12W1T7_B3-DataSheet-v00_10-EN.pdf?fileId=5546d46270c4f93e0170f185a2eb72da
FP15R12W1T7B3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+54.47 EUR
Mindestbestellmenge: 10
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FP15R12W1T7B11BOMA1 Infineon-FP15R12W1T7_B11-DataSheet-v00_10-EN.pdf?fileId=5546d462700c0ae6017057c6ba956751
FP15R12W1T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: 175°C (TJ)
NTC Thermistor: No
Supplier Device Package: AG-EASY1B-2
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+58.34 EUR
Mindestbestellmenge: 9
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PTFA191001EV4R250XTMA1 PTFA191001E_F.pdf
PTFA191001EV4R250XTMA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
Produkt ist nicht verfügbar
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PTFA191001EV4XWSA1 PTFA191001E_F.pdf
PTFA191001EV4XWSA1
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 1.96GHz
Power - Output: 44dBm
Gain: 17dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 900 mA
Produkt ist nicht verfügbar
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PTFA212001F/1 P4 fundamentals-of-power-semiconductors
PTFA212001F/1 P4
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS 30V H-37260-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads, Flanged
Current Rating (Amps): 10µA
Mounting Type: Surface Mount
Frequency: 2.14GHz
Power - Output: 50W
Gain: 15.8dB
Technology: LDMOS
Supplier Device Package: H-37260-2
Voltage - Rated: 65 V
Voltage - Test: 30 V
Current - Test: 1.6 A
Produkt ist nicht verfügbar
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FZ2400R12HE4B9HOSA2 Infineon-FZ2400R12HE4_B9-DS-v02_04-EN.pdf?fileId=db3a30433e4143bd013e46d8f64f417d
FZ2400R12HE4B9HOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 3560A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 3560 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 13500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 150 nF @ 25 V
auf Bestellung 12 Stücke:
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Anzahl Preis
1+1559.73 EUR
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IDB15E60ATMA1 Infineon-IDB15E60-DS-v02_04-en.pdf?fileId=db3a304412b407950112b438c7b86b98
IDB15E60ATMA1
Hersteller: Infineon Technologies
Description: DIODE GP 600V 29.2A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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IRL3705ZPBF description irl3705zpbf.pdf?fileId=5546d462533600a40153565f3a192536
IRL3705ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR3910TRLPBF irfr3910pbf.pdf?fileId=5546d462533600a401535631f05d20df
IRFR3910TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 364238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
585+0.83 EUR
Mindestbestellmenge: 585
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IPF021N13NM6ATMA1 IPF021N13NM6_Rev2.0_10-16-23.pdf
IPF021N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPF021N13NM6ATMA1 IPF021N13NM6_Rev2.0_10-16-23.pdf
IPF021N13NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
auf Bestellung 795 Stücke:
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Anzahl Preis
2+12.37 EUR
10+8.39 EUR
100+6.13 EUR
500+5.53 EUR
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ICE2PCS06GXUMA1 ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77
ICE2PCS06GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Current - Startup: 450 µA
auf Bestellung 81792 Stücke:
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Anzahl Preis
376+1.30 EUR
Mindestbestellmenge: 376
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AUIRL3705Z auirl3705z.pdf?fileId=5546d462533600a4015355bac1911546
AUIRL3705Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C0853AV-100BBC
CY7C0853AV-100BBC
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 100 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPB60R210CFD7ATMA1 Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0
IPB60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Produkt ist nicht verfügbar
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IPB60R210CFD7ATMA1 Infineon-IPB60R210CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0bf0c1ac0
IPB60R210CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+3.62 EUR
100+2.52 EUR
500+2.04 EUR
Mindestbestellmenge: 4
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S25FL128SAGNFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFA003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGNFA003 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGNFA003
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.55 EUR
10+6.71 EUR
25+6.40 EUR
50+6.18 EUR
100+5.96 EUR
250+5.68 EUR
500+5.48 EUR
1000+5.28 EUR
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IRGS4B60KD1TRRP fundamentals-of-power-semiconductors
IRGS4B60KD1TRRP
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
Produkt ist nicht verfügbar
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CY7C1360C-166AXCT download
CY7C1360C-166AXCT
Hersteller: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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REFXDPS2201170WBPA2TOBO1 Infineon-XPDS2201_AC_DC_reference_design_170W_with_XDP_digital_power-ApplicationNotes-v01_00-EN.pdf?fileId=8ac78c8c85ecb347018617383f5b1dcc
REFXDPS2201170WBPA2TOBO1
Hersteller: Infineon Technologies
Description: REFXDPS2201170WBPA2TOBO1
Packaging: Box
Function: Battery Charger
Type: Power Management
Contents: Board(s)
Utilized IC / Part: XDPS2201
Embedded: No
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+196.89 EUR
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2EP130RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP130RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
Produkt ist nicht verfügbar
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2EP130RXTMA1 Infineon-2EP1xxR-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231d6dd30ca1
2EP130RXTMA1
Hersteller: Infineon Technologies
Description: ISOLATED DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Applications: Transformer Driver
Supplier Device Package: PG-TSSOP-8
auf Bestellung 4022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.87 EUR
10+2.11 EUR
25+1.92 EUR
100+1.71 EUR
250+1.61 EUR
500+1.55 EUR
1000+1.50 EUR
2500+1.45 EUR
Mindestbestellmenge: 7
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IFS150B12N3E4B31BOSA1 Infineon-IFS150B12N3E4_B31-DS-v02_00-en_de.pdf?fileId=db3a3043293a15c4012945dd402a53c1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 750W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
auf Bestellung 8 Stücke:
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Anzahl Preis
2+375.82 EUR
Mindestbestellmenge: 2
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IFS150B12N3E4B31BOSA1 Infineon-IFS150B12N3E4_B31-DS-v02_00-en_de.pdf?fileId=db3a3043293a15c4012945dd402a53c1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Produkt ist nicht verfügbar
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IFS150B12N3E4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 750W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Produkt ist nicht verfügbar
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CYPD2122-24LQXI Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD2122-24LQXI
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 14
DigiKey Programmable: Not Verified
auf Bestellung 4497 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.90 EUR
10+2.15 EUR
25+1.96 EUR
100+1.75 EUR
490+1.59 EUR
980+1.58 EUR
Mindestbestellmenge: 7
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AIMDQ75R020M1HXUMA1 Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca
AIMDQ75R020M1HXUMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R020M1HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIMDQ75R020M1HXUMA1 Infineon-AIMDQ75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef09e47dd2aca
AIMDQ75R020M1HXUMA1
Hersteller: Infineon Technologies
Description: AIMDQ75R020M1HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.20 EUR
10+20.07 EUR
100+17.80 EUR
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2ED2388S06FXUMA1 Infineon-2ED2388S06F-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1a6b9ef614f9
2ED2388S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 290mA, 700mA
Produkt ist nicht verfügbar
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CY8C4146LQS-S263 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4146LQS-S263
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147LQS-S263 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S263
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147LQS-S265T Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQS-S265T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64QFN
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147AZS-S265T
CY8C4147AZS-S265T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16, 20x10/12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4147LQSS265UXQSA1 Infineon-CY8C4147LQS-S295-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8
CY8C4147LQSS265UXQSA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64VFQFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, TRNG, WDT
Supplier Device Package: 64-QFN (9x9)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PROF2BTS70061EPPDBTOBO1
PROF2BTS70061EPPDBTOBO1
Hersteller: Infineon Technologies
Description: PROF_2 BTS7006-1EPP DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7006-1EPP
Platform: Arduino
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+76.44 EUR
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IKP08N65F5XKSA1 DS_IKP08N65F5+1.1.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30433af5291e013af9bac1de5da9
IKP08N65F5XKSA1
Hersteller: Infineon Technologies
Description: IGBT 650V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: PG-TO220-3-111
Td (on/off) @ 25°C: 10ns/116ns
Switching Energy: 70µJ (on), 20µJ (off)
Test Condition: 400V, 4A, 48Ohm, 15V
Gate Charge: 22 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 70 W
auf Bestellung 494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.01 EUR
50+1.96 EUR
100+1.76 EUR
Mindestbestellmenge: 5
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IAUMN08S5N013GAUMA1 Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.55 EUR
10+4.95 EUR
25+4.55 EUR
100+4.11 EUR
250+3.90 EUR
500+3.78 EUR
1000+3.67 EUR
Mindestbestellmenge: 3
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IAUMN08S5N013GAUMA1 Infineon-IAUMN08S5N013G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f29b336110c
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tray
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAT2402ELSE6327XTSA1 Infineon-BAT24-02ELS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389645e44e92
BAT2402ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Resistance @ If, F: 10Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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IPT60R037CM8XTMA1 Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c
IPT60R037CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R037CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
Produkt ist nicht verfügbar
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IPT60R037CM8XTMA1 Infineon-IPT60R037CM8-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d9c7949012a6c
IPT60R037CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R037CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 27A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 680µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3458 pF @ 400 V
auf Bestellung 1460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.14 EUR
10+8.17 EUR
100+6.61 EUR
500+5.76 EUR
Mindestbestellmenge: 2
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S25FS256SAGMFI000 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGMFI000
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.64 EUR
10+6.18 EUR
25+5.99 EUR
50+5.85 EUR
240+5.54 EUR
480+5.50 EUR
Mindestbestellmenge: 3
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S25FS256SAGBHI203 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGBHI203
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FS256SAGBHI203 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS256SAGBHI203
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.10 EUR
10+8.08 EUR
25+7.70 EUR
50+7.43 EUR
100+7.17 EUR
250+6.84 EUR
500+6.59 EUR
1000+6.36 EUR
Mindestbestellmenge: 2
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