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TZ425N14KOFHPSA1 TZ425N14KOFHPSA1 Infineon Technologies Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d Description: SCR MODULE 1.4KV 800A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 510 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TD425N12KOFS01HPSA1 Infineon Technologies Description: SCR MODULE 1.2KV 800A MODULE
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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S70KS1282GABHV023 S70KS1282GABHV023 Infineon Technologies Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210 Description: IC PSRAM 128MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: PG-BGA-24-801
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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CY7C185-15VC CY7C185-15VC Infineon Technologies CY7C185.pdf Description: IC SRAM 64KBIT PARALLEL 28SOJ
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 28-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Packaging: Tube
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TLE4973A075T5S0001XUMA1 TLE4973A075T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
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TLE4973A075T5S0001XUMA1 TLE4973A075T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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TLE4973A120T5S0001XUMA1 TLE4973A120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973A120T5S0001XUMA1 TLE4973A120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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IPT023N10NM5LF2ATMA1 IPT023N10NM5LF2ATMA1 Infineon Technologies Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3 Description: IPT023N10NM5LF2ATMA1
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IPT023N10NM5LF2ATMA1 IPT023N10NM5LF2ATMA1 Infineon Technologies Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3 Description: IPT023N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
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IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 Infineon Technologies Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf Description: IPB021N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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IPB021N10NM5LF2ATMA1 IPB021N10NM5LF2ATMA1 Infineon Technologies Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf Description: IPB021N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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CY7C1472V33-200AXC CY7C1472V33-200AXC Infineon Technologies Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1426JV18-300BZC CY7C1426JV18-300BZC Infineon Technologies CY7C1411%2C13%2C15%2C26JV18.pdf Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
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CY7C1548KV18-400BZC CY7C1548KV18-400BZC Infineon Technologies Infineon-CY7C1548KV18_CY7C1550KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.0_Cycle_Read_Latency)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec171943639&utm_source=cypress&utm_medium=referral&utm_campaign= Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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ESD959B1W0201E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Tape & Reel (TR)
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CYT2B75CADQ0AZEGS CYT2B75CADQ0AZEGS Infineon Technologies Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2 Description: TVII-B-E-1M-100 CFLASH 1MB
Number of I/O: 74
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+/M4F
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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T2351N52TOHXPSA1 T2351N52TOHXPSA1 Infineon Technologies T2351N.pdf Description: SCR MODULE 5.2KV 3530A TO-200AF
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 3530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3110 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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T1851N70TOHXPSA1 T1851N70TOHXPSA1 Infineon Technologies Infineon-T1851N-DataSheet-v06_00-EN.pdf?fileId=5546d4627112d9d501712b08d852404b Description: SCR MODULE 7KV 2880A TO-200AF
Voltage - Off State: 7 kV
Current - On State (It (RMS)) (Max): 2880 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1830 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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T1901N80TOHXPSA1 T1901N80TOHXPSA1 Infineon Technologies T1901N_Rev9.0_05-02-11.pdf Description: SCR MODULE 8KV 3300A TO-200AF
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 3300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2930 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 67000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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T2251N80TOHXPSA1 T2251N80TOHXPSA1 Infineon Technologies Infineon-T2251N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b42fb26d4cfb Description: SCR MODULE 8KV 3550A TO-200AF
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 67000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 3550 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3140 A
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T2851N52TOHXPSA1 T2851N52TOHXPSA1 Infineon Technologies Infineon-T2851N-DS-v09_02-EN.pdf?fileId=db3a304412b407950112b43126ef53b0 Description: SCR MODULE 5.2KV 4860A TO-200AF
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 4860 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 4120 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 82000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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T3441N52TOHXPSA1 T3441N52TOHXPSA1 Infineon Technologies Infineon-T3441N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b4312da253b8 Description: SCR MODULE 5.2KV 5030A TO-200AF
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 5030 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 4410 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 82000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
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T533N80TOHXPSA1 T533N80TOHXPSA1 Infineon Technologies Infineon-T533N80TOH%20PR-DS-v03_00-EN.pdf?fileId=5546d4624a75e5f1014ac97d6e591b3a Description: SCR MODULE 864A TO-200AC
Current - On State (It (RMS)) (Max): 864 A
Current - On State (It (AV)) (Max): 790 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - Hold (Ih) (Max): 100 mA
Structure: Single
Operating Temperature: -40°C ~ 120°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
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T2871N80TOHXPSA1 T2871N80TOHXPSA1 Infineon Technologies T2871N.pdf Description: SCR MODULE 8KV 4120A TO-200AF
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 4120 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3660 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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T4021N52TOHXPSA1 T4021N52TOHXPSA1 Infineon Technologies Infineon-T4021N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b4312a5453b4 Description: SCR MODULE 5.35KV 6100A TO-200AF
Voltage - Off State: 5.35 kV
Current - On State (It (RMS)) (Max): 6100 A
Voltage - Gate Trigger (Vgt) (Max): 3.5 V
Current - On State (It (AV)) (Max): 5460 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 105000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
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T1503N80TOHPRXPSA1 Infineon Technologies Infineon-T1503N-DS-v08_00-en_de.pdf?fileId=db3a304412b407950112b430f8eb52b7 Description: SCR MODULE 8KV 2770A DO-200AE
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 2770 A
Current - On State (It (AV)) (Max): 2560 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 60000A @ 50Hz
Current - Hold (Ih) (Max): 100 mA
Structure: Single
Operating Temperature: -40°C ~ 120°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
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BSC080N03MSGATMA1 BSC080N03MSGATMA1 Infineon Technologies Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383 Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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IPQC60R017S7AXTMA1 IPQC60R017S7AXTMA1 Infineon Technologies Infineon-IPQC60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c885a6cf6 Description: MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
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IPQC60R017S7AXTMA1 IPQC60R017S7AXTMA1 Infineon Technologies Infineon-IPQC60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c885a6cf6 Description: MOSFET
Drive Voltage (Max Rds On, Min Rds On): 12V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
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IPT60R160CM8XTMA1 IPT60R160CM8XTMA1 Infineon Technologies Infineon-IPT60R160CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c9715623e0197173db0eb331c Description: IPT60R160CM8XTMA1
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPT60R160CM8XTMA1 IPT60R160CM8XTMA1 Infineon Technologies Infineon-IPT60R160CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c9715623e0197173db0eb331c Description: IPT60R160CM8XTMA1
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Packaging: Cut Tape (CT)
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TT310N26KOFHPSA1 TT310N26KOFHPSA1 Infineon Technologies TT310N.pdf Description: SCR MODULE 2.6KV 700A MODULE
Packaging: Bulk
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 446 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
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EVALM1IM523TOBO1 EVALM1IM523TOBO1 Infineon Technologies Infineon-2023-01_EVAL-M1-IM523_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8691902101869d9dbceb271a Description: EVAL BOARD FOR IM523-X6A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM523-X6A
Primary Attributes: 85 ~ 255 VAC Input Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
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S29GL128S10DHSS10 S29GL128S10DHSS10 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 128MBIT PARALLEL 64FBGA
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
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S29GL01GS11DHSS10 S29GL01GS11DHSS10 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
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S25HS02GTDPBHM053 S25HS02GTDPBHM053 Infineon Technologies Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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S25HS02GTDZBHM053 S25HS02GTDZBHM053 Infineon Technologies Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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CY7C1268XV18-633BZXC CY7C1268XV18-633BZXC Infineon Technologies Infineon-CY7C1268XV18_CY7C1270XV18_36-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec286fb3777 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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CY8C4147LDSS553XQLA1 CY8C4147LDSS553XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 128KB FLASH 48VFQFN
Number of I/O: 40
Grade: Automotive
Supplier Device Package: 48-QFN (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Qualification: AEC-Q100
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CY8C4148LDS-S553 CY8C4148LDS-S553 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 256KB FLASH 48VFQFN
Qualification: AEC-Q100
Number of I/O: 40
Grade: Automotive
Supplier Device Package: 48-QFN (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
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CY8C4149LDSS553XQLA1 CY8C4149LDSS553XQLA1 Infineon Technologies Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 48VFQFN
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 384KB (384K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 40
Grade: Automotive
Supplier Device Package: 48-QFN (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
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CYDM128B08-55BVXI CYDM128B08-55BVXI Infineon Technologies Description: IC SRAM 128KBIT PAR 100VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 100-VFBGA (6x6)
Memory Format: SRAM
Technology: SRAM - Dual Port, MoBL
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
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CYDM256B16-55BVXI CYDM256B16-55BVXI Infineon Technologies CYDM%28064%2C128%2C256%29B16.pdf Description: IC SRAM 256KBIT PAR 100VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 100-VFBGA (6x6)
Memory Format: SRAM
Technology: SRAM - Dual Port, MoBL
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Bulk
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CYDM256B16-55BVXI CYDM256B16-55BVXI Infineon Technologies CYDM%28064%2C128%2C256%29B16.pdf Description: IC SRAM 256KBIT PAR 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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CYUSB3312-BVXC CYUSB3312-BVXC Infineon Technologies Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8 Description: USB SUPER SPEED HUBS
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 10
DigiKey Programmable: Not Verified
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CYWB0120AB-BVXI CYWB0120AB-BVXI Infineon Technologies Description: IC WEST BRIDGE ANTIOCH 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply: 110mA
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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CYDM064B08-55BVXI CYDM064B08-55BVXI Infineon Technologies Description: IC SRAM 64KBIT PARALLEL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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CY8C24094-24BVXI CY8C24094-24BVXI Infineon Technologies Infineon-CY8C24094_CY8C24794_CY8C24894_CY8C24994_PSOC_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v40_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec703773dba&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Description: IC MCU 8BIT 16KB FLASH 100VFBGA
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY8C24094-24LFXI CY8C24094-24LFXI Infineon Technologies Description: IC MCU 8BIT 16KB FLASH 100VFBGA
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 56
DigiKey Programmable: Not Verified
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CYDM064B16-55BVXI CYDM064B16-55BVXI Infineon Technologies CYDM%28064%2C128%2C256%29B16.pdf Description: IC SRAM 64KBIT PARALLEL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYDM128B16-55BVXI CYDM128B16-55BVXI Infineon Technologies CYDM%28064%2C128%2C256%29B16.pdf Description: IC SRAM 128KBIT PAR 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 16
DigiKey Programmable: Not Verified
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CYWB0124AB-BVXI CYWB0124AB-BVXI Infineon Technologies CYWB012%284%2C5%29AB.pdf Description: IC WEST BRIDGE ANTIOCH 100-VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply: 110mA
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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CYDM128B16-55BVXIT CYDM128B16-55BVXIT Infineon Technologies CYDM%28064%2C128%2C256%29B16.pdf Description: IC SRAM 128KBIT PAR 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 16
DigiKey Programmable: Not Verified
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CYWB0124AB-BVXIT CYWB0124AB-BVXIT Infineon Technologies CYWB012%284%2C5%29AB.pdf Description: IC WEST BRIDGE ANTIOCH 100-VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply: 110mA
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
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FZ3600R17KE3B2NOSA1 Infineon Technologies FZ3600R17KE3_B2_Rev2.1_2013-11-25.pdf Description: IGBT MODULE 1700V 3600A
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 4800 A
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CY7C1515AV18-200BZXI CY7C1515AV18-200BZXI Infineon Technologies cy7c15%2811%2C13%2C15%2C26%29av18_8.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1568KV18-450BZXI CY7C1568KV18-450BZXI Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
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CY7C1520KV18-333BZXI CY7C1520KV18-333BZXI Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 333 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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CY7C1520KV18-333BZXI CY7C1520KV18-333BZXI Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PARALLEL 165FBGA
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 333 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
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TZ425N14KOFHPSA1 Infineon-TZ425N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f896d4c1d
TZ425N14KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.4KV 800A MODULE
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 510 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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TD425N12KOFS01HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.2KV 800A MODULE
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 800 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 471 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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S70KS1282GABHV023 Infineon-S70KL1282_S70KS1282_3.0_V_1.8_V_128_Mb_(16_MB)_HYPERBUS_INTERFACE_HYPERRAM_(SELF-REFRESH_DRAM)-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9315b7210
S70KS1282GABHV023
Hersteller: Infineon Technologies
Description: IC PSRAM 128MBIT HYPERBUS 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 200 MHz
Memory Format: PSRAM
Supplier Device Package: PG-BGA-24-801
Write Cycle Time - Word, Page: 35ns
Memory Interface: HyperBus
Access Time: 35 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C185-15VC CY7C185.pdf
CY7C185-15VC
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOJ
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Access Time: 15 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 28-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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TLE4973A075T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A075T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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TLE4973A075T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A075T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Number of Channels: 1
Supplier Device Package: PG-TISON-8-6
Current - Supply (Max): 25mA
For Measuring: DC
Sensor Type: Hall Effect
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C
Frequency: 210kHz
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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2+10.69 EUR
5+9.59 EUR
10+9.2 EUR
25+8.72 EUR
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100+8.1 EUR
500+7.68 EUR
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TLE4973A120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A120T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Produkt ist nicht verfügbar
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TLE4973A120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973A120T5S0001XUMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
auf Bestellung 2485 Stücke:
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2+11.06 EUR
5+9.96 EUR
10+9.54 EUR
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100+8.41 EUR
500+7.98 EUR
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IPT023N10NM5LF2ATMA1 Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3
IPT023N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPT023N10NM5LF2ATMA1
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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IPT023N10NM5LF2ATMA1 Infineon-IPT023N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191e9ae9d251ac3
IPT023N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPT023N10NM5LF2ATMA1
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Supplier Device Package: PG-HSOF-8-1
Vgs(th) (Max) @ Id: 3.9V @ 193µA
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
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2+11.9 EUR
10+7.98 EUR
50+6.31 EUR
100+5.77 EUR
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IPB021N10NM5LF2ATMA1 Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf
IPB021N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPB021N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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1000+5.21 EUR
3000+5.14 EUR
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IPB021N10NM5LF2ATMA1 Infineon-IPB021N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d05e54d51cbf
IPB021N10NM5LF2ATMA1
Hersteller: Infineon Technologies
Description: IPB021N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 176A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
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2+13.48 EUR
10+9.09 EUR
50+7.21 EUR
100+6.6 EUR
500+6.28 EUR
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CY7C1472V33-200AXC Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
CY7C1472V33-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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1+99.02 EUR
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CY7C1426JV18-300BZC CY7C1411%2C13%2C15%2C26JV18.pdf
CY7C1426JV18-300BZC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 9
DigiKey Programmable: Not Verified
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5+129.9 EUR
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CY7C1548KV18-400BZC Infineon-CY7C1548KV18_CY7C1550KV18_72-Mbit_DDR_II+_SRAM_Two-Word_Burst_Architecture_(2.0_Cycle_Read_Latency)-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec171943639&utm_source=cypress&utm_medium=referral&utm_campaign=
CY7C1548KV18-400BZC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
1+140.93 EUR
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ESD959B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYT2B75CADQ0AZEGS Infineon-Traveo_II_CYT2B7_Series-DataSheet-v01_00-EN.pdf?fileId=5546d462749a7c2d01749d90a89b4dc2
CYT2B75CADQ0AZEGS
Hersteller: Infineon Technologies
Description: TVII-B-E-1M-100 CFLASH 1MB
Number of I/O: 74
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Data Converters: A/D 57x12b SAR
Core Processor: ARM® Cortex®-M0+/M4F
EEPROM Size: 96K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 128K x 8
Program Memory Size: 1.0625MB (1.0625M x 8)
Speed: 100MHz, 160MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.48 EUR
10+18.42 EUR
90+15.86 EUR
180+15.33 EUR
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T2351N52TOHXPSA1 T2351N.pdf
T2351N52TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 5.2KV 3530A TO-200AF
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 3530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3110 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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T1851N70TOHXPSA1 Infineon-T1851N-DataSheet-v06_00-EN.pdf?fileId=5546d4627112d9d501712b08d852404b
T1851N70TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 7KV 2880A TO-200AF
Voltage - Off State: 7 kV
Current - On State (It (RMS)) (Max): 2880 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 1830 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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T1901N80TOHXPSA1 T1901N_Rev9.0_05-02-11.pdf
T1901N80TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 8KV 3300A TO-200AF
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 3300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 2930 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 67000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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T2251N80TOHXPSA1 Infineon-T2251N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b42fb26d4cfb
T2251N80TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 8KV 3550A TO-200AF
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 67000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 3550 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3140 A
Produkt ist nicht verfügbar
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T2851N52TOHXPSA1 Infineon-T2851N-DS-v09_02-EN.pdf?fileId=db3a304412b407950112b43126ef53b0
T2851N52TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 5.2KV 4860A TO-200AF
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 4860 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 4120 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 82000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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T3441N52TOHXPSA1 Infineon-T3441N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b4312da253b8
T3441N52TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 5.2KV 5030A TO-200AF
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Voltage - Off State: 5.2 kV
Current - On State (It (RMS)) (Max): 5030 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 4410 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 82000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Produkt ist nicht verfügbar
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T533N80TOHXPSA1 Infineon-T533N80TOH%20PR-DS-v03_00-EN.pdf?fileId=5546d4624a75e5f1014ac97d6e591b3a
T533N80TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 864A TO-200AC
Current - On State (It (RMS)) (Max): 864 A
Current - On State (It (AV)) (Max): 790 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - Hold (Ih) (Max): 100 mA
Structure: Single
Operating Temperature: -40°C ~ 120°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
Produkt ist nicht verfügbar
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T2871N80TOHXPSA1 T2871N.pdf
T2871N80TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 8KV 4120A TO-200AF
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 4120 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3660 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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T4021N52TOHXPSA1 Infineon-T4021N-DS-v06_00-en_de.pdf?fileId=db3a304412b407950112b4312a5453b4
T4021N52TOHXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 5.35KV 6100A TO-200AF
Voltage - Off State: 5.35 kV
Current - On State (It (RMS)) (Max): 6100 A
Voltage - Gate Trigger (Vgt) (Max): 3.5 V
Current - On State (It (AV)) (Max): 5460 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 105000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 350 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Tray
Produkt ist nicht verfügbar
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T1503N80TOHPRXPSA1 Infineon-T1503N-DS-v08_00-en_de.pdf?fileId=db3a304412b407950112b430f8eb52b7
Hersteller: Infineon Technologies
Description: SCR MODULE 8KV 2770A DO-200AE
Voltage - Off State: 8 kV
Current - On State (It (RMS)) (Max): 2770 A
Current - On State (It (AV)) (Max): 2560 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 60000A @ 50Hz
Current - Hold (Ih) (Max): 100 mA
Structure: Single
Operating Temperature: -40°C ~ 120°C
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Tray
Produkt ist nicht verfügbar
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BSC080N03MSGATMA1 Infineon-BSC080N03MSG-DS-v02_01-en.pdf?fileId=db3a304313d846880113de6cfd390383
BSC080N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A/53A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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AnzahlPrivatkunde
642+0.92 EUR
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IPQC60R017S7AXTMA1 Infineon-IPQC60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c885a6cf6
IPQC60R017S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
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AnzahlPrivatkunde
750+17.34 EUR
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IPQC60R017S7AXTMA1 Infineon-IPQC60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c885a6cf6
IPQC60R017S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Drive Voltage (Max Rds On, Min Rds On): 12V
Grade: Automotive
Supplier Device Package: PG-HDSOP-22
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerBSOP Module
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
auf Bestellung 750 Stücke:
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AnzahlPrivatkunde
1+25.85 EUR
10+21.88 EUR
100+18.93 EUR
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IPT60R160CM8XTMA1 Infineon-IPT60R160CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c9715623e0197173db0eb331c
IPT60R160CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R160CM8XTMA1
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPT60R160CM8XTMA1 Infineon-IPT60R160CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c9715623e0197173db0eb331c
IPT60R160CM8XTMA1
Hersteller: Infineon Technologies
Description: IPT60R160CM8XTMA1
Vgs(th) (Max) @ Id: 4.7V @ 150µA
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-HSOF-8
Packaging: Cut Tape (CT)
auf Bestellung 1879 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.18 EUR
10+4.02 EUR
50+3.09 EUR
100+2.78 EUR
500+2.26 EUR
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TT310N26KOFHPSA1 TT310N.pdf
TT310N26KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.6KV 700A MODULE
Packaging: Bulk
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 446 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 10000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Produkt ist nicht verfügbar
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EVALM1IM523TOBO1 Infineon-2023-01_EVAL-M1-IM523_User_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8691902101869d9dbceb271a
EVALM1IM523TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM523-X6A
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IM523-X6A
Primary Attributes: 85 ~ 255 VAC Input Voltage
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
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AnzahlPrivatkunde
1+231.56 EUR
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S29GL128S10DHSS10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL128S10DHSS10
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 8M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Produkt ist nicht verfügbar
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S29GL01GS11DHSS10
S29GL01GS11DHSS10
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Produkt ist nicht verfügbar
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S25HS02GTDPBHM053
S25HS02GTDPBHM053
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS02GTDZBHM053
S25HS02GTDZBHM053
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1268XV18-633BZXC Infineon-CY7C1268XV18_CY7C1270XV18_36-Mbit_DDR_II+_Xtreme_SRAM_Two-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec286fb3777
CY7C1268XV18-633BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 633 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4147LDSS553XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4147LDSS553XQLA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VFQFN
Number of I/O: 40
Grade: Automotive
Supplier Device Package: 48-QFN (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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CY8C4148LDS-S553 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4148LDS-S553
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48VFQFN
Qualification: AEC-Q100
Number of I/O: 40
Grade: Automotive
Supplier Device Package: 48-QFN (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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CY8C4149LDSS553XQLA1 Infineon-CY8C4149AZS-S575-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149LDSS553XQLA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 48VFQFN
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 384KB (384K x 8)
Speed: 48MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Qualification: AEC-Q100
Number of I/O: 40
Grade: Automotive
Supplier Device Package: 48-QFN (7x7)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
Produkt ist nicht verfügbar
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CYDM128B08-55BVXI
CYDM128B08-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 128KBIT PAR 100VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16K x 8
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 100-VFBGA (6x6)
Memory Format: SRAM
Technology: SRAM - Dual Port, MoBL
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Kbit
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CYDM256B16-55BVXI CYDM%28064%2C128%2C256%29B16.pdf
CYDM256B16-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 100VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 100-VFBGA (6x6)
Memory Format: SRAM
Technology: SRAM - Dual Port, MoBL
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Bulk
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CYDM256B16-55BVXI CYDM%28064%2C128%2C256%29B16.pdf
CYDM256B16-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 256KBIT PAR 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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CYUSB3312-BVXC Infineon-CYUSB330x_CYUSB331x_CYUSB332x_HX3_USB_3.0_Hub-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecb53f644b8
CYUSB3312-BVXC
Hersteller: Infineon Technologies
Description: USB SUPER SPEED HUBS
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Interface: I2C
RAM Size: 16K x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 3.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 10
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYWB0120AB-BVXI
CYWB0120AB-BVXI
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE ANTIOCH 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply: 110mA
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYDM064B08-55BVXI
CYDM064B08-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C24094-24BVXI Infineon-CY8C24094_CY8C24794_CY8C24894_CY8C24994_PSOC_PROGRAMMABLE_SYSTEM-ON-CHIP-DataSheet-v40_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec703773dba&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
CY8C24094-24BVXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 100VFBGA
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 56
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C24094-24LFXI
CY8C24094-24LFXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 100VFBGA
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 48x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: POR, PWM, WDT
Supplier Device Package: 100-VFBGA (6x6)
Number of I/O: 56
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYDM064B16-55BVXI CYDM%28064%2C128%2C256%29B16.pdf
CYDM064B16-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 4K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYDM128B16-55BVXI CYDM%28064%2C128%2C256%29B16.pdf
CYDM128B16-55BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 128KBIT PAR 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYWB0124AB-BVXI CYWB012%284%2C5%29AB.pdf
CYWB0124AB-BVXI
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE ANTIOCH 100-VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply: 110mA
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYDM128B16-55BVXIT CYDM%28064%2C128%2C256%29B16.pdf
CYDM128B16-55BVXIT
Hersteller: Infineon Technologies
Description: IC SRAM 128KBIT PAR 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V, 2.4V ~ 2.6V, 3V ~ 3.6V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYWB0124AB-BVXIT CYWB012%284%2C5%29AB.pdf
CYWB0124AB-BVXIT
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE ANTIOCH 100-VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.3V
Current - Supply: 110mA
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FZ3600R17KE3B2NOSA1 FZ3600R17KE3_B2_Rev2.1_2013-11-25.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 3600A
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 4800 A
Produkt ist nicht verfügbar
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CY7C1515AV18-200BZXI cy7c15%2811%2C13%2C15%2C26%29av18_8.pdf
CY7C1515AV18-200BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY7C1568KV18-450BZXI CY7C1568%2C70KV18.pdf
CY7C1568KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
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2+484.2 EUR
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CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1520KV18-333BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 333 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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1+109.65 EUR
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CY7C1520KV18-333BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1520KV18-333BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 333 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
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