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DD380N22KOFXPSA1 DD380N22KOFXPSA1 Infineon Technologies Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+311.19 EUR
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DD360N22KHPSA1 DD360N22KHPSA1 Infineon Technologies Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5 Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Produkt ist nicht verfügbar
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PSB2134HV2.2 PSB2134HV2.2 Infineon Technologies psb213x.pdf Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
auf Bestellung 5617 Stücke:
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33+14.43 EUR
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PSB2134HV1.4GD PSB2134HV1.4GD Infineon Technologies Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
auf Bestellung 850 Stücke:
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31+15.68 EUR
Mindestbestellmenge: 31
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IPB65R225C7ATMA2 IPB65R225C7ATMA2 Infineon Technologies Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
auf Bestellung 868 Stücke:
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10+3.29 EUR
100+2.29 EUR
500+1.86 EUR
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IMT40R015M2HXTMA1 IMT40R015M2HXTMA1 Infineon Technologies Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Produkt ist nicht verfügbar
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IMT40R015M2HXTMA1 IMT40R015M2HXTMA1 Infineon Technologies Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1917 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.02 EUR
10+16.15 EUR
100+13.54 EUR
500+12.47 EUR
1000+12.12 EUR
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IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Infineon Technologies Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Produkt ist nicht verfügbar
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IMBG40R015M2HXTMA1 IMBG40R015M2HXTMA1 Infineon Technologies Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3 Description: SIC-MOS
Packaging: Tray
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1000 Stücke:
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1000+13.66 EUR
Mindestbestellmenge: 1000
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IPB65R225C7ATMA1 IPB65R225C7ATMA1 Infineon Technologies DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Produkt ist nicht verfügbar
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IDWD120E120D7XKSA1 IDWD120E120D7XKSA1 Infineon Technologies IDWD120E120D7_Rev1.00_12-15-23.pdf Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 184 Stücke:
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2+9.96 EUR
10+9.00 EUR
25+8.58 EUR
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IPAW70R950CEXKSA1 IPAW70R950CEXKSA1 Infineon Technologies Infineon-IPAW70R950CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d20d148c71ef Description: MOSFET N-CH 700V 7.4A TO220-3-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 10800 Stücke:
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483+0.98 EUR
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CY91F527USDPMC-GSE2 Infineon Technologies Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3201-06 CY3201-06 Infineon Technologies Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
auf Bestellung 4 Stücke:
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1+109.67 EUR
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CY3201-07 CY3201-07 Infineon Technologies Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
auf Bestellung 3 Stücke:
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1+100.78 EUR
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CY3207ISSP CY3207ISSP Infineon Technologies Infineon-CY3207-ISSP_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eef6ede7f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
Produkt ist nicht verfügbar
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CY3203A-CAPSENSE CY3203A-CAPSENSE Infineon Technologies CY3203A-CapSense%20Kit%20Quick%20Start.pdf Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
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TLE94108ELXUMA1 TLE94108ELXUMA1 Infineon Technologies Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16 Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 8914 Stücke:
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179+2.83 EUR
Mindestbestellmenge: 179
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TLE7233EMXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DZ540N26KHPSA1 DZ540N26KHPSA1 Infineon Technologies DZ540N.pdf Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Produkt ist nicht verfügbar
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T740N26TOFPRXOSA1 Infineon Technologies Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
Produkt ist nicht verfügbar
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ISZ173N15NM6ATMA1 ISZ173N15NM6ATMA1 Infineon Technologies Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 4906 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.14 EUR
10+3.08 EUR
100+2.35 EUR
500+1.91 EUR
1000+1.86 EUR
Mindestbestellmenge: 5
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IPQC60R010S7AXTMA1 IPQC60R010S7AXTMA1 Infineon Technologies Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC60R010S7AXTMA1 IPQC60R010S7AXTMA1 Infineon Technologies Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 660 Stücke:
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1+31.86 EUR
10+23.79 EUR
100+21.84 EUR
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CY29942AXCT CY29942AXCT Infineon Technologies Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
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CY29942AXI CY29942AXI Infineon Technologies Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
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CY29942AXI CY29942AXI Infineon Technologies Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
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TLE5046MTICPW2100HALA1 TLE5046MTICPW2100HALA1 Infineon Technologies Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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DD600N18KXPSA1 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MOD GP 1800V BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
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IRAM136-1060A IRAM136-1060A Infineon Technologies IRAM136-1060A.pdf Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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IRAM136-1060A IRAM136-1060A Infineon Technologies IRAM136-1060A.pdf Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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CY23EP05SXC-1HT CY23EP05SXC-1HT Infineon Technologies download Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29PL032J55BFI070 S29PL032J55BFI070 Infineon Technologies Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0 Description: IC FLASH 32MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLV49462LHALA1 TLV49462LHALA1 Infineon Technologies TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1 Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
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SLS32AIA010MSUSON10XTMA2 SLS32AIA010MSUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: External
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
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BSC034N03LSGATMA1 BSC034N03LSGATMA1 Infineon Technologies BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
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CY7C2263KV18-550BZXC CY7C2263KV18-550BZXC Infineon Technologies Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2163KV18-450BZXI CY7C2163KV18-450BZXI Infineon Technologies Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C2245KV18-450BZXI CY7C2245KV18-450BZXI Infineon Technologies Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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CY9AF111LPMC-G-MJE1 CY9AF111LPMC-G-MJE1 Infineon Technologies Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF111MAPMC-G-MJE1 CY9AF111MAPMC-G-MJE1 Infineon Technologies Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TDPBHI013 S25HS512TDPBHI013 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TDPBHB013 S25HS512TDPBHB013 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TDPBHB010 S25HS512TDPBHB010 Infineon Technologies en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24 Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS02GTDPBHB053 S25HS02GTDPBHB053 Infineon Technologies Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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S25HS02GTDZBHB053 S25HS02GTDZBHB053 Infineon Technologies Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1911KV18-300BZXC CY7C1911KV18-300BZXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD104N12KHPSA1 DD104N12KHPSA1 Infineon Technologies INFNS29282-1.pdf?t.download=true&u=5oefqw Description: DIODE MODULE GP 1.2KV 104A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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CY9BF365KPMC-G-JNE2 CY9BF365KPMC-G-JNE2 Infineon Technologies download Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFIR13 S25FL128SAGMFIR13 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S25FL128SAGMFIR13 S25FL128SAGMFIR13 Infineon Technologies Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S6E1A12C0AGN20000 S6E1A12C0AGN20000 Infineon Technologies Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b Description: IC MCU 32BIT 88KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
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S6E1A12C0AGN2B000 S6E1A12C0AGN2B000 Infineon Technologies Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b Description: IC MCU 32BIT 88KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E1A12B0AGP2B000 S6E1A12B0AGP2B000 Infineon Technologies Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 37
Produkt ist nicht verfügbar
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IAUCN08S7N013ATMA1 IAUCN08S7N013ATMA1 Infineon Technologies Infineon-IAUCN08S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d40516d4969aa Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN08S7N013ATMA1 IAUCN08S7N013ATMA1 Infineon Technologies Infineon-IAUCN08S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d40516d4969aa Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IQD009N06NM5CGATMA1 IQD009N06NM5CGATMA1 Infineon Technologies Infineon-IQD009N06NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8caea00536 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
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IQD009N06NM5CGATMA1 IQD009N06NM5CGATMA1 Infineon Technologies Infineon-IQD009N06NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8caea00536 Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4872 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.78 EUR
10+5.12 EUR
25+4.71 EUR
100+4.25 EUR
250+4.04 EUR
500+3.91 EUR
1000+3.80 EUR
2500+3.69 EUR
Mindestbestellmenge: 3
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IPP80N06S2L07AKSA2 IPP80N06S2L07AKSA2 Infineon Technologies INFNS09574-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6050 Stücke:
Lieferzeit 10-14 Tag (e)
174+2.81 EUR
Mindestbestellmenge: 174
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DD380N22KOFXPSA1 Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e
DD380N22KOFXPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+311.19 EUR
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DD360N22KHPSA1 Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5
DD360N22KHPSA1
Hersteller: Infineon Technologies
Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
Produkt ist nicht verfügbar
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PSB2134HV2.2 psb213x.pdf
PSB2134HV2.2
Hersteller: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
auf Bestellung 5617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+14.43 EUR
Mindestbestellmenge: 33
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PSB2134HV1.4GD
PSB2134HV1.4GD
Hersteller: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+15.68 EUR
Mindestbestellmenge: 31
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IPB65R225C7ATMA2 Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.05 EUR
10+3.29 EUR
100+2.29 EUR
500+1.86 EUR
Mindestbestellmenge: 4
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IMT40R015M2HXTMA1 Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Produkt ist nicht verfügbar
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IMT40R015M2HXTMA1 Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMT40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.02 EUR
10+16.15 EUR
100+13.54 EUR
500+12.47 EUR
1000+12.12 EUR
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IMBG40R015M2HXTMA1 Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3
IMBG40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
Produkt ist nicht verfügbar
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IMBG40R015M2HXTMA1 Infineon-IMBG40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f5801017032f3
IMBG40R015M2HXTMA1
Hersteller: Infineon Technologies
Description: SIC-MOS
Packaging: Tray
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+13.66 EUR
Mindestbestellmenge: 1000
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IPB65R225C7ATMA1 DS_IPB65R225C7_2_0.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Produkt ist nicht verfügbar
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IDWD120E120D7XKSA1 IDWD120E120D7_Rev1.00_12-15-23.pdf
IDWD120E120D7XKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1200V 177A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 215 ns
Technology: Standard
Current - Average Rectified (Io): 177A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 120 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.96 EUR
10+9.00 EUR
25+8.58 EUR
Mindestbestellmenge: 2
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IPAW70R950CEXKSA1 Infineon-IPAW70R950CE-DS-v02_00-EN.pdf?fileId=5546d462576f34750157d20d148c71ef
IPAW70R950CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO220-3-31
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220-3-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 10800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
483+0.98 EUR
Mindestbestellmenge: 483
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CY91F527USDPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32BT 1.5625MB FLSH 176QFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 1.5625MB (1.5625M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, EBI/EMI, FlexRay, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 115
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY3201-06
CY3201-06
Hersteller: Infineon Technologies
Description: MCU EMULATOR POD FOR 20-SSOP
Packaging: Bulk
For Use With/Related Products: CY8C26233
Accessory Type: Emulation Pod
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+109.67 EUR
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CY3201-07
CY3201-07
Hersteller: Infineon Technologies
Description: MCU EMULATOR POD FOR 28-SOIC
Packaging: Bulk
For Use With/Related Products: CY8C26443
Accessory Type: Emulation Pod
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+100.78 EUR
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CY3207ISSP Infineon-CY3207-ISSP_Kit_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eef6ede7f43&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY3207ISSP
Hersteller: Infineon Technologies
Description: PSOC USB IN-SYSTEM PROGRAMMER
Packaging: Bulk
For Use With/Related Products: PSoC Mixed Signal Arrays
Type: Programmer
Contents: Board(s), Cable(s), Power Supply
Produkt ist nicht verfügbar
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CY3203A-CAPSENSE CY3203A-CapSense%20Kit%20Quick%20Start.pdf
CY3203A-CAPSENSE
Hersteller: Infineon Technologies
Description: KIT EVAL CAPSENSE CSA
Packaging: Bulk
Interface: LCD
Voltage - Supply: 5V, USB
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C20x34
Supplied Contents: Board(s), Cable(s), Accessories
Embedded: Yes, MCU, 8-Bit
Produkt ist nicht verfügbar
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TLE94108ELXUMA1 Infineon-TLE94108EL-DS-v01_00-EN.pdf?fileId=5546d462576f347501579a157dc07d16
TLE94108ELXUMA1
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 500MA 24SSOP
Packaging: Bulk
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (8)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 850mOhm LS, 850mOhm HS
Applications: AC Motors, DC Motors, General Purpose
Current - Output / Channel: 500mA
Current - Peak Output: 2A
Technology: Power MOSFET
Voltage - Load: 5.5V ~ 20V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
auf Bestellung 8914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
179+2.83 EUR
Mindestbestellmenge: 179
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TLE7233EMXUMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:4 24-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 1Ohm
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 470mA
Ratio - Input:Output: 1:4
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DZ540N26KHPSA1 DZ540N.pdf
DZ540N26KHPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2.6KV 732A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 732A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2600 V
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Current - Reverse Leakage @ Vr: 40 mA @ 2600 V
Produkt ist nicht verfügbar
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T740N26TOFPRXOSA1
Hersteller: Infineon Technologies
Description: DIODE BG-T5814K0-1
Packaging: Tray
Package / Case: TO-200AB, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 745 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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ISZ173N15NM6ATMA1 Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014
ISZ173N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
Produkt ist nicht verfügbar
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ISZ173N15NM6ATMA1 Infineon-ISZ173N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a019077406e337014
ISZ173N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 16A, 15V
Power Dissipation (Max): 2.5W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TSDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
auf Bestellung 4906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+3.08 EUR
100+2.35 EUR
500+1.91 EUR
1000+1.86 EUR
Mindestbestellmenge: 5
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IPQC60R010S7AXTMA1 Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0
IPQC60R010S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPQC60R010S7AXTMA1 Infineon-IPQC60R010S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185150c5c7a6cf0
IPQC60R010S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.86 EUR
10+23.79 EUR
100+21.84 EUR
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CY29942AXCT Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY29942AXCT
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+25.20 EUR
Mindestbestellmenge: 19
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CY29942AXI Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY29942AXI
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
auf Bestellung 554 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+41.48 EUR
Mindestbestellmenge: 12
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CY29942AXI Infineon-CY29942AXC-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebd015d2ef5&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY29942AXI
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:18 200MHZ 32TQFP
Packaging: Tray
Package / Case: 32-LQFP
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:18
Differential - Input:Output: No/No
Supplier Device Package: 32-TQFP (7x7)
Frequency - Max: 200 MHz
Produkt ist nicht verfügbar
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TLE5046MTICPW2100HALA1
TLE5046MTICPW2100HALA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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DD600N18KXPSA1 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
Hersteller: Infineon Technologies
Description: DIODE MOD GP 1800V BGPB60E2A-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
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IRAM136-1060A IRAM136-1060A.pdf
IRAM136-1060A
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 99 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+23.18 EUR
Mindestbestellmenge: 22
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IRAM136-1060A IRAM136-1060A.pdf
IRAM136-1060A
Hersteller: Infineon Technologies
Description: IC MOD PWR HYBRID 600V 10A MOTOR
Packaging: Tube
Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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CY23EP05SXC-1HT download
CY23EP05SXC-1HT
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 200MHz, 220MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29PL032J55BFI070 Infineon-S29PL-J_128-_128-_64-_32-MBIT_(8_8_4_2M_X_16_BIT)_3_V_FLASH_WITH_ENHANCED_VERSATILEIO-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5806154f0
S29PL032J55BFI070
Hersteller: Infineon Technologies
Description: IC FLASH 32MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 48-VFBGA (8.15x6.15)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLV49462LHALA1 TLV4946xy_Rev1.0.pdf?folderId=db3a30431f848401011facc1c83b4674&fileId=db3a304320d39d5901215443fca305d1
TLV49462LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Bulk
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-2
Test Condition: -40°C ~ 85°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
868+0.59 EUR
Mindestbestellmenge: 868
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SLS32AIA010MSUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MSUSON10XTMA2
Hersteller: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
RAM Size: External
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Produkt ist nicht verfügbar
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BSC034N03LSGATMA1 BSC034N03LS_rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ed1d7b2011f3ba01de246ef
BSC034N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2000+0.68 EUR
Mindestbestellmenge: 8
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CY7C2263KV18-550BZXC Infineon-CY7C2263KV18_CY7C2265KV18_36-Mbit_QDR_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)_with_ODT-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec18d15365b
CY7C2263KV18-550BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2163KV18-450BZXI Infineon-CY7C2163KV18_CY7C2165KV18_18_MBIT_QDR_II+_SRAM_FOUR_WORD_BURST_ARCHITECTURE_(2.5_CYCLE_READ_LATENCY)_WITH_ODT-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebde2e830e1&utm_source=cypress&utm_medium=referral&utm
CY7C2163KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
CY7C2245KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+120.98 EUR
Mindestbestellmenge: 5
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CY9AF111LPMC-G-MJE1
CY9AF111LPMC-G-MJE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9AF111MAPMC-G-MJE1
CY9AF111MAPMC-G-MJE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT FLASH LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TDPBHI013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HS512TDPBHI013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TDPBHB013 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HS512TDPBHB013
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS512TDPBHB010 en?dcId=8a8181663431cb50013431cb500b0000&downloadTitle=Infineon-S25HS256T_S25HS512T_S25HS01GT_S25HL256T_S25HL512T_S25HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_Quad_SPI_1_8V_3-DataSheet-v68_00-EN.pdf&download=L2RnZGwvSW5maW5lb24
S25HS512TDPBHB010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS02GTDPBHB053
S25HS02GTDPBHB053
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25HS02GTDZBHB053
S25HS02GTDZBHB053
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT SPI/QUAD 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1911KV18-300BZXC download
CY7C1911KV18-300BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 9
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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DD104N12KHPSA1 INFNS29282-1.pdf?t.download=true&u=5oefqw
DD104N12KHPSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 104A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Produkt ist nicht verfügbar
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CY9BF365KPMC-G-JNE2 download
CY9BF365KPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 416KB (416K x 8)
RAM Size: 48K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 8x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 33
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFIR13 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIR13
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL128SAGMFIR13 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SAGMFIR13
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1375 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
10+7.74 EUR
25+7.38 EUR
50+7.12 EUR
100+6.87 EUR
250+6.55 EUR
500+6.32 EUR
Mindestbestellmenge: 3
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S6E1A12C0AGN20000 Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b
S6E1A12C0AGN20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E1A12C0AGN2B000 Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b
S6E1A12C0AGN2B000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 37
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E1A12B0AGP2B000 Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b
S6E1A12B0AGP2B000
Hersteller: Infineon Technologies
Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 8x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 37
Produkt ist nicht verfügbar
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IAUCN08S7N013ATMA1 Infineon-IAUCN08S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d40516d4969aa
IAUCN08S7N013ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUCN08S7N013ATMA1 Infineon-IAUCN08S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d40516d4969aa
IAUCN08S7N013ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 274A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8402 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IQD009N06NM5CGATMA1 Infineon-IQD009N06NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8caea00536
IQD009N06NM5CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
Produkt ist nicht verfügbar
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IQD009N06NM5CGATMA1 Infineon-IQD009N06NM5CG-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c88ae21230188af8caea00536
IQD009N06NM5CGATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS 6 POWER-TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-TTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
auf Bestellung 4872 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.78 EUR
10+5.12 EUR
25+4.71 EUR
100+4.25 EUR
250+4.04 EUR
500+3.91 EUR
1000+3.80 EUR
2500+3.69 EUR
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IPP80N06S2L07AKSA2 INFNS09574-1.pdf?t.download=true&u=5oefqw
IPP80N06S2L07AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
174+2.81 EUR
Mindestbestellmenge: 174
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