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ISC028N03LF2SATMA1 ISC028N03LF2SATMA1 Infineon Technologies Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Produkt ist nicht verfügbar
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ISC023N03LF2SATMA1 ISC023N03LF2SATMA1 Infineon Technologies Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021 Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.63 EUR
Mindestbestellmenge: 5000 Stücke
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ISC023N03LF2SATMA1 ISC023N03LF2SATMA1 Infineon Technologies Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021 Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.4 EUR
22+1 EUR
25+0.89 EUR
100+0.79 EUR
250+0.74 EUR
500+0.7 EUR
1000+0.68 EUR
2500+0.64 EUR
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ISC012N03LF2SATMA1 ISC012N03LF2SATMA1 Infineon Technologies Infineon-ISC012N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938c251bd61bd4 Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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ISC012N03LF2SATMA1 ISC012N03LF2SATMA1 Infineon Technologies Infineon-ISC012N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938c251bd61bd4 Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.09 EUR
14+1.51 EUR
25+1.37 EUR
100+1.2 EUR
250+1.13 EUR
500+1.08 EUR
1000+1.06 EUR
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IPD023N03LF2SATMA1 IPD023N03LF2SATMA1 Infineon Technologies Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9 Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.93 EUR
Mindestbestellmenge: 2000 Stücke
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IPD023N03LF2SATMA1 IPD023N03LF2SATMA1 Infineon Technologies Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9 Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
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ICE5QR2280BG1XUMA1 ICE5QR2280BG1XUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: ICE5QR2280BG1XUMA1
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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ICE5QR2280BG1XUMA1 ICE5QR2280BG1XUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4 Description: ICE5QR2280BG1XUMA1
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.2 EUR
10+2.36 EUR
25+2.14 EUR
100+1.9 EUR
250+1.8 EUR
500+1.73 EUR
1000+1.71 EUR
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IPP030N10NF2SAKMA1 IPP030N10NF2SAKMA1 Infineon Technologies Infineon-IPP030N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe54511178c6 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.76 EUR
50+3.4 EUR
100+3.08 EUR
500+2.5 EUR
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BGSX24M2U16E6327XTSA1 BGSX24M2U16E6327XTSA1 Infineon Technologies Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
auf Bestellung 3462 Stücke:
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13+1.74 EUR
15+1.48 EUR
25+1.39 EUR
100+1.29 EUR
250+1.21 EUR
500+1.17 EUR
1000+1.12 EUR
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EVALMA5342MS200WX2TOBO1 EVALMA5342MS200WX2TOBO1 Infineon Technologies Infineon-EVAL_MA5342MS_200Wx2_MA5342MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c8232a9ec1cb8 Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
auf Bestellung 4 Stücke:
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1+736.84 EUR
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EVALMA5302MS200WX2TOBO1 EVALMA5302MS200WX2TOBO1 Infineon Technologies Infineon-EVAL_MA5302MS_200Wx2_MA5302MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c817bb19d0cb4 Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
auf Bestellung 2 Stücke:
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1+736.84 EUR
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IGB070S10S1XTMA1 IGB070S10S1XTMA1 Infineon Technologies infineon-igb070s10s1-datasheet-en.pdf Description: GANFET N-CH 100V 13A 4TDFN
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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S25FL064P0XBHIS30 S25FL064P0XBHIS30 Infineon Technologies Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL064P0XMFV000 S25FL064P0XMFV000 Infineon Technologies Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SK-FM0-V48-S6E1A1 SK-FM0-V48-S6E1A1 Infineon Technologies Description: S6E1A1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
auf Bestellung 7 Stücke:
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1+57.45 EUR
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S6E1A12B0AGN20000 S6E1A12B0AGN20000 Infineon Technologies download Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
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S6E1A12B0AGN2B000 S6E1A12B0AGN2B000 Infineon Technologies Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E1A11B0AGP2B000 S6E1A11B0AGP2B000 Infineon Technologies Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 23
Produkt ist nicht verfügbar
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FM0-V48-S6E1A1 FM0-V48-S6E1A1 Infineon Technologies Description: S6E1A1 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
Produkt ist nicht verfügbar
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CY8C4126LCEHV423TXUMA1 Infineon Technologies infineon-infin-broschuure-psoc-4-automotive-productbrochure-en.pdf Description: PSOC BASED - HV FAMILY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4127LCEHV423TXUMA1 Infineon Technologies infineon-infin-broschuure-psoc-4-automotive-productbrochure-en.pdf Description: PSOC BASED - HV FAMILY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY8C4147AZE-S475 CY8C4147AZE-S475 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8&utm_source=cypress&utm_medium=referral&utm_campaign= Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10/12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 3170 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.29 EUR
10+12.65 EUR
25+11.75 EUR
160+10.47 EUR
320+10.15 EUR
640+9.88 EUR
1120+9.7 EUR
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CY8C4125AZI-S413 CY8C4125AZI-S413 Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.39 EUR
10+4.81 EUR
25+4.41 EUR
100+3.97 EUR
250+3.77 EUR
500+3.65 EUR
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CY8C4146LQI-S422T CY8C4146LQI-S422T Infineon Technologies infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4146LQI-S422T CY8C4146LQI-S422T Infineon Technologies infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
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10+5.14 EUR
25+4.72 EUR
100+4.26 EUR
250+4.03 EUR
500+3.96 EUR
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SI3443DV SI3443DV Infineon Technologies Si3443DV.pdf Description: MOSFET P-CH 20V 4.4A MICRO6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
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KITA2GTC3675VTRBTOBO1 KITA2GTC3675VTRBTOBO1 Infineon Technologies KITA2GTC3675VTRBTOBO1.pdf Description: KIT_A2G_TC367_5V_TRB
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC376
Platform: AURIX
auf Bestellung 1 Stücke:
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XMC4200F64K256BAXQMA1 Infineon Technologies Description: XMC4000
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Number of I/O: 35
auf Bestellung 933 Stücke:
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2+16.23 EUR
10+12.6 EUR
25+11.69 EUR
160+10.42 EUR
320+10.1 EUR
640+9.84 EUR
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CY8C4125AZI-S413T CY8C4125AZI-S413T Infineon Technologies Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY7C1021B-15ZC CY7C1021B-15ZC Infineon Technologies CY7C1021B%20RevC.pdf Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NBT2000A8K0T4USON8XTMA3 NBT2000A8K0T4USON8XTMA3 Infineon Technologies Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50 Description: NBT2000A8K0T4USON8XTMA3
Writable Memory: 8kB (User)
Standards: ISO 14443-4A, NFC
Technology: Passive
Operating Temperature: -25°C ~ 85°C
Memory Type: Read/Write
Frequency: 13.56MHz
Style: Card
Packaging: Tape & Reel (TR)
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NBT2000A8K0T4USON8XTMA3 NBT2000A8K0T4USON8XTMA3 Infineon Technologies Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50 Description: NBT2000A8K0T4USON8XTMA3
Technology: Passive
Operating Temperature: -25°C ~ 85°C
Memory Type: Read/Write
Frequency: 13.56MHz
Style: Card
Packaging: Cut Tape (CT)
Writable Memory: 8kB (User)
Standards: ISO 14443-4A, NFC
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IMDQ65R020M2HXUMA1 IMDQ65R020M2HXUMA1 Infineon Technologies Infineon-IMDQ65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dcecf0f3a78 Description: IMDQ65R020M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
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IMDQ65R020M2HXUMA1 IMDQ65R020M2HXUMA1 Infineon Technologies Infineon-IMDQ65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dcecf0f3a78 Description: IMDQ65R020M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 397 Stücke:
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1+22.9 EUR
10+17.99 EUR
25+16.77 EUR
100+15.42 EUR
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S26KS512SDABHV030 S26KS512SDABHV030 Infineon Technologies infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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IRG4RC10UTRPBF IRG4RC10UTRPBF Infineon Technologies IRG4RC10UPbF.pdf Description: IGBT 600V 8.5A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 19ns/116ns
Switching Energy: 80µJ (on), 160µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 8.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 38 W
Produkt ist nicht verfügbar
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IRG4RC10UTRPBF IRG4RC10UTRPBF Infineon Technologies IRG4RC10UPbF.pdf Description: IGBT 600V 8.5A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 19ns/116ns
Switching Energy: 80µJ (on), 160µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 8.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 38 W
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S29GL01GT13TFNV13 S29GL01GT13TFNV13 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 130 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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IQD020N10NM5SCATMA1 IQD020N10NM5SCATMA1 Infineon Technologies IQD020N10NM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
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IQD020N10NM5SCATMA1 IQD020N10NM5SCATMA1 Infineon Technologies IQD020N10NM5SCATMA1.pdf Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.09 EUR
10+8.1 EUR
100+5.85 EUR
500+5.43 EUR
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IQD020N10NM5CGSCATMA1 IQD020N10NM5CGSCATMA1 Infineon Technologies Infineon-IQD020N10NM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b723eb9364b8 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
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IQD020N10NM5CGSCATMA1 IQD020N10NM5CGSCATMA1 Infineon Technologies Infineon-IQD020N10NM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b723eb9364b8 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 4320 Stücke:
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2+12.26 EUR
10+8.21 EUR
100+5.94 EUR
500+5.52 EUR
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IAUZN04S7N013ATMA2 IAUZN04S7N013ATMA2 Infineon Technologies Infineon-IAUZN04S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ed65f6ad0 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
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CY7C1470BV25-250AXI CY7C1470BV25-250AXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C21434B-24LQXI CY8C21434B-24LQXI Infineon Technologies download Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-XFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI100N12S305AKSA1 IPI100N12S305AKSA1 Infineon Technologies IPx100N12S3-05.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
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IPI100N12S305AKSA1 IPI100N12S305AKSA1 Infineon Technologies IPx100N12S3-05.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IFF600B12ME4PB11BPSA1 IFF600B12ME4PB11BPSA1 Infineon Technologies Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e Description: IGBT MOD 1200V 600A 40W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
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IMBG65R009M1HXTMA1 IMBG65R009M1HXTMA1 Infineon Technologies Infineon-IMBG65R009M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191c1ea05ce2783 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 97.2A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 32.4mA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6054 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R009M1HXTMA1 IMBG65R009M1HXTMA1 Infineon Technologies Infineon-IMBG65R009M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191c1ea05ce2783 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 97.2A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 32.4mA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6054 pF @ 400 V
auf Bestellung 992 Stücke:
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1+56.68 EUR
10+41.46 EUR
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TLE5046ICAKLRHALA1 TLE5046ICAKLRHALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: IC HALL SENSOR LINEAR SSO-2
Qualification: AEC-Q100
Grade: Automotive
Packaging: Cut Tape (CT)
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
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TLE5046ICAKLRHALA1 TLE5046ICAKLRHALA1 Infineon Technologies Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5 Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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CY8C4548AXQ-S485 CY8C4548AXQ-S485 Infineon Technologies Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101 Description: IC MCU 32BIT 256KB FLASH 64TQFP
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 53
Supplier Device Package: 64-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Produkt ist nicht verfügbar
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CYT2B94DACQ0AZEGSTHUYA1 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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S6E2C39J0AGV2000A S6E2C39J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 400 Stücke
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S6E2C3AJ0AGB1000A S6E2C3AJ0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E2C3AH0AGV2000A S6E2C3AH0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 600 Stücke
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TLE42672GATMA2 TLE42672GATMA2 Infineon Technologies TLE4267-2.pdf Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ISC028N03LF2SATMA1
ISC028N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Produkt ist nicht verfügbar
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ISC023N03LF2SATMA1 Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021
ISC023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.63 EUR
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ISC023N03LF2SATMA1 Infineon-ISC023N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193912f66941021
ISC023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.4 EUR
22+1 EUR
25+0.89 EUR
100+0.79 EUR
250+0.74 EUR
500+0.7 EUR
1000+0.68 EUR
2500+0.64 EUR
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ISC012N03LF2SATMA1 Infineon-ISC012N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938c251bd61bd4
ISC012N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Produkt ist nicht verfügbar
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ISC012N03LF2SATMA1 Infineon-ISC012N03LF2S-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b001938c251bd61bd4
ISC012N03LF2SATMA1
Hersteller: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 2090 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
14+1.51 EUR
25+1.37 EUR
100+1.2 EUR
250+1.13 EUR
500+1.08 EUR
1000+1.06 EUR
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IPD023N03LF2SATMA1 Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9
IPD023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.93 EUR
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IPD023N03LF2SATMA1 Infineon-IPD023N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b81b29e82ad9
IPD023N03LF2SATMA1
Hersteller: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
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ICE5QR2280BG1XUMA1 Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4
ICE5QR2280BG1XUMA1
Hersteller: Infineon Technologies
Description: ICE5QR2280BG1XUMA1
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICE5QR2280BG1XUMA1 Infineon-ICE5QRxx80BG-1-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d019233514f1f43d4
ICE5QR2280BG1XUMA1
Hersteller: Infineon Technologies
Description: ICE5QR2280BG1XUMA1
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
10+2.36 EUR
25+2.14 EUR
100+1.9 EUR
250+1.8 EUR
500+1.73 EUR
1000+1.71 EUR
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IPP030N10NF2SAKMA1 Infineon-IPP030N10NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194fe54511178c6
IPP030N10NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
auf Bestellung 790 Stücke:
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AnzahlPrivatkunde
4+6.76 EUR
50+3.4 EUR
100+3.08 EUR
500+2.5 EUR
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BGSX24M2U16E6327XTSA1 Infineon-BGSX24M2U16-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dd17eaaed054c
BGSX24M2U16E6327XTSA1
Hersteller: Infineon Technologies
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
auf Bestellung 3462 Stücke:
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13+1.74 EUR
15+1.48 EUR
25+1.39 EUR
100+1.29 EUR
250+1.21 EUR
500+1.17 EUR
1000+1.12 EUR
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EVALMA5342MS200WX2TOBO1 Infineon-EVAL_MA5342MS_200Wx2_MA5342MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c8232a9ec1cb8
EVALMA5342MS200WX2TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
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EVALMA5302MS200WX2TOBO1 Infineon-EVAL_MA5302MS_200Wx2_MA5302MS_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c817bb19d0cb4
EVALMA5302MS200WX2TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
auf Bestellung 2 Stücke:
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IGB070S10S1XTMA1 infineon-igb070s10s1-datasheet-en.pdf
IGB070S10S1XTMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 100V 13A 4TDFN
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Produkt ist nicht verfügbar
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S25FL064P0XBHIS30 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064P0XBHIS30
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S25FL064P0XMFV000 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064P0XMFV000
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 104 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 5µs, 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SK-FM0-V48-S6E1A1
SK-FM0-V48-S6E1A1
Hersteller: Infineon Technologies
Description: S6E1A1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
auf Bestellung 7 Stücke:
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1+57.45 EUR
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S6E1A12B0AGN20000 download
S6E1A12B0AGN20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E1A12B0AGN2B000 Infineon-S6E1A_Series_32_bit_Arm_Cortex_M0+_FM0+_Microcontroller-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec4f5c392c5b
S6E1A12B0AGN2B000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 88KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 88KB (88K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 23
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6E1A11B0AGP2B000
S6E1A11B0AGP2B000
Hersteller: Infineon Technologies
Description: MM-LEGACY MM
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 56KB (56K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 5x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Number of I/O: 23
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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FM0-V48-S6E1A1
FM0-V48-S6E1A1
Hersteller: Infineon Technologies
Description: S6E1A1 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0+
Utilized IC / Part: S6E1A1
Produkt ist nicht verfügbar
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CY8C4126LCEHV423TXUMA1 infineon-infin-broschuure-psoc-4-automotive-productbrochure-en.pdf
Hersteller: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4127LCEHV423TXUMA1 infineon-infin-broschuure-psoc-4-automotive-productbrochure-en.pdf
Hersteller: Infineon Technologies
Description: PSOC BASED - HV FAMILY
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4147AZE-S475 Infineon-Automotive_PSoC_4_PSoC_4100S_Plus_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7ff0b70e8&utm_source=cypress&utm_medium=referral&utm_campaign=
CY8C4147AZE-S475
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 10/12b SAR; D/A 2x7b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 3170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.29 EUR
10+12.65 EUR
25+11.75 EUR
160+10.47 EUR
320+10.15 EUR
640+9.88 EUR
1120+9.7 EUR
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CY8C4125AZI-S413 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AZI-S413
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.39 EUR
10+4.81 EUR
25+4.41 EUR
100+3.97 EUR
250+3.77 EUR
500+3.65 EUR
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CY8C4146LQI-S422T infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio
CY8C4146LQI-S422T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C4146LQI-S422T infineon-psoc-4-psoc-4100s-datasheet-programmable-system-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integratio
CY8C4146LQI-S422T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 840 Stücke:
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AnzahlPrivatkunde
4+6.83 EUR
10+5.14 EUR
25+4.72 EUR
100+4.26 EUR
250+4.03 EUR
500+3.96 EUR
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SI3443DV Si3443DV.pdf
SI3443DV
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.4A MICRO6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
Produkt ist nicht verfügbar
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KITA2GTC3675VTRBTOBO1 KITA2GTC3675VTRBTOBO1.pdf
KITA2GTC3675VTRBTOBO1
Hersteller: Infineon Technologies
Description: KIT_A2G_TC367_5V_TRB
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: TriCore™
Utilized IC / Part: TC376
Platform: AURIX
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+1188.3 EUR
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XMC4200F64K256BAXQMA1
Hersteller: Infineon Technologies
Description: XMC4000
Packaging: Tray
Package / Case: 64-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 40K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 10x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-19
Number of I/O: 35
auf Bestellung 933 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.23 EUR
10+12.6 EUR
25+11.69 EUR
160+10.42 EUR
320+10.1 EUR
640+9.84 EUR
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CY8C4125AZI-S413T Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AZI-S413T
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b Slope; D/A 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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CY7C1021B-15ZC CY7C1021B%20RevC.pdf
CY7C1021B-15ZC
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 44TSOP II
Packaging: Bag
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NBT2000A8K0T4USON8XTMA3 Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50
NBT2000A8K0T4USON8XTMA3
Hersteller: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA3
Writable Memory: 8kB (User)
Standards: ISO 14443-4A, NFC
Technology: Passive
Operating Temperature: -25°C ~ 85°C
Memory Type: Read/Write
Frequency: 13.56MHz
Style: Card
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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NBT2000A8K0T4USON8XTMA3 Infineon-OPTIGA_Authenticate_NBT_DSE-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84d5b8d24f50
NBT2000A8K0T4USON8XTMA3
Hersteller: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA3
Technology: Passive
Operating Temperature: -25°C ~ 85°C
Memory Type: Read/Write
Frequency: 13.56MHz
Style: Card
Packaging: Cut Tape (CT)
Writable Memory: 8kB (User)
Standards: ISO 14443-4A, NFC
Produkt ist nicht verfügbar
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IMDQ65R020M2HXUMA1 Infineon-IMDQ65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dcecf0f3a78
IMDQ65R020M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R020M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Produkt ist nicht verfügbar
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IMDQ65R020M2HXUMA1 Infineon-IMDQ65R020M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dcecf0f3a78
IMDQ65R020M2HXUMA1
Hersteller: Infineon Technologies
Description: IMDQ65R020M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.9 EUR
10+17.99 EUR
25+16.77 EUR
100+15.42 EUR
250+15.34 EUR
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S26KS512SDABHV030 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS512SDABHV030
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG4RC10UTRPBF IRG4RC10UPbF.pdf
IRG4RC10UTRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 8.5A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 19ns/116ns
Switching Energy: 80µJ (on), 160µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 8.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 38 W
Produkt ist nicht verfügbar
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IRG4RC10UTRPBF IRG4RC10UPbF.pdf
IRG4RC10UTRPBF
Hersteller: Infineon Technologies
Description: IGBT 600V 8.5A TO-252AA
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-252AA (DPAK)
Td (on/off) @ 25°C: 19ns/116ns
Switching Energy: 80µJ (on), 160µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 8.5 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 38 W
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
417+1.3 EUR
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S29GL01GT13TFNV13 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT13TFNV13
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 130 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IQD020N10NM5SCATMA1 IQD020N10NM5SCATMA1.pdf
IQD020N10NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
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IQD020N10NM5SCATMA1 IQD020N10NM5SCATMA1.pdf
IQD020N10NM5SCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 1391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.09 EUR
10+8.1 EUR
100+5.85 EUR
500+5.43 EUR
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IQD020N10NM5CGSCATMA1 Infineon-IQD020N10NM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b723eb9364b8
IQD020N10NM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
Produkt ist nicht verfügbar
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IQD020N10NM5CGSCATMA1 Infineon-IQD020N10NM5CGSC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b723eb9364b8
IQD020N10NM5CGSCATMA1
Hersteller: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 276A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
auf Bestellung 4320 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.26 EUR
10+8.21 EUR
100+5.94 EUR
500+5.52 EUR
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IAUZN04S7N013ATMA2 Infineon-IAUZN04S7N013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ed65f6ad0
IAUZN04S7N013ATMA2
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 193A (Tj)
Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3V @ 35µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY7C1470BV25-250AXI download
CY7C1470BV25-250AXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C21434B-24LQXI download
CY8C21434B-24LQXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-XFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPI100N12S305AKSA1 IPx100N12S3-05.pdf
IPI100N12S305AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
121+4.57 EUR
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IPI100N12S305AKSA1 IPx100N12S3-05.pdf
IPI100N12S305AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IFF600B12ME4PB11BPSA1 Infineon-IFF600B12ME4P_B11-DS-v03_01-EN.pdf?fileId=5546d462602a9dc801602ab2bc49001e
IFF600B12ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 600A 40W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 40 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
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1+386.37 EUR
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IMBG65R009M1HXTMA1 Infineon-IMBG65R009M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191c1ea05ce2783
IMBG65R009M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 97.2A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 32.4mA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6054 pF @ 400 V
Produkt ist nicht verfügbar
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IMBG65R009M1HXTMA1 Infineon-IMBG65R009M1H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191c1ea05ce2783
IMBG65R009M1HXTMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 97.2A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 32.4mA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6054 pF @ 400 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+56.68 EUR
10+41.46 EUR
100+40.4 EUR
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TLE5046ICAKLRHALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICAKLRHALA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Qualification: AEC-Q100
Grade: Automotive
Packaging: Cut Tape (CT)
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
7+3.3 EUR
10+3.14 EUR
25+2.95 EUR
50+2.83 EUR
100+2.71 EUR
500+2.48 EUR
1000+2.39 EUR
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TLE5046ICAKLRHALA1 Infineon-TLE5046_AK_PWM2_wheel_speed_sensor-DataSheet-v01_00-EN.pdf?fileId=5546d46272e49d2a01730f0a90b229f5
TLE5046ICAKLRHALA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR SSO-2
Packaging: Tape & Box (TB)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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CY8C4548AXQ-S485 Infineon-PSoC_4_PSoC_4500S_Datasheet_Programmable_System-on-Chip_(PSoC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee812fa7101
CY8C4548AXQ-S485
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 53
Supplier Device Package: 64-TQFP (14x14)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Produkt ist nicht verfügbar
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CYT2B94DACQ0AZEGSTHUYA1
Hersteller: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
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S6E2C39J0AGV2000A download
S6E2C39J0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C3AJ0AGB1000A download
S6E2C3AJ0AGB1000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C3AH0AGV2000A download
S6E2C3AH0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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TLE42672GATMA2 TLE4267-2.pdf
TLE42672GATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-7-1
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Qualification: AEC-Q100
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