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IPP018N03LF2SAKSA1 IPP018N03LF2SAKSA1 Infineon Technologies Infineon-IPP018N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cd1e162b8f Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 110µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
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8+2.24 EUR
11+1.68 EUR
100+1.40 EUR
500+1.19 EUR
1000+1.09 EUR
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IPD06P003NATMA1 IPD06P003NATMA1 Infineon Technologies IPD06P003N.pdf Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Produkt ist nicht verfügbar
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S29GL512T10TFI040 S29GL512T10TFI040 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
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40+15.11 EUR
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IM64D121AXTMA1 IM64D121AXTMA1 Infineon Technologies Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
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IM64D121AXTMA1 IM64D121AXTMA1 Infineon Technologies Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
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ESD160B1W0201E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Tape & Reel (TR)
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ESD160B1W0201E6327XTSA1 Infineon Technologies Description: TVS DIODES
Packaging: Cut Tape (CT)
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CYTVII-B-H-8M-176-CPU CYTVII-B-H-8M-176-CPU Infineon Technologies Infineon-002-25907_0C_CYTVII-B-H-8M-176-CPU_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018baddfdf637dd4 Description: CPU_BOARD FOR TVII-B-H-4M-176
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
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IPA60R1K5CEXKSA1 IPA60R1K5CEXKSA1 Infineon Technologies Infineon-IPA60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c69e87218 Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Produkt ist nicht verfügbar
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TLE49SRC8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRC8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRP8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRP8XUMA1 Infineon Technologies TLE49SR.pdf Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
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S29GL128S10GHB013 S29GL128S10GHB013 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 128MBIT CFI 56FBGA
Packaging: Cut Tape (CT)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 100 ns
Memory Organization: 16M x 8
Qualification: AEC-Q100
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10+9.54 EUR
25+9.25 EUR
50+9.03 EUR
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250+8.53 EUR
500+8.32 EUR
1000+8.11 EUR
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IPP020N03LF2SAKSA1 IPP020N03LF2SAKSA1 Infineon Technologies Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
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TLD5098EPVSEPICTOBO1 TLD5098EPVSEPICTOBO1 Infineon Technologies Infineon-TLD5098EP_VSEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274dd77260174eb6fd9eb0ae7 Description: EVAL BOARD FOR TLD5098EP
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 8V ~ 27V
Current - Output: 1A
Contents: Board(s)
Frequency - Switching: 400kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
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1+113.48 EUR
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IMT65R107M1HXUMA1 IMT65R107M1HXUMA1 Infineon Technologies Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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2000+4.37 EUR
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IMT65R107M1HXUMA1 IMT65R107M1HXUMA1 Infineon Technologies Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
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ETD540N22P60XPSA1 ETD540N22P60XPSA1 Infineon Technologies Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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FD401R17KF6CB2NOSA1 Infineon Technologies INFNS28314-1.pdf?t.download=true&u=ovmfp3 Description: FD401R17 - IGBT MODULE
Packaging: Bulk
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CYPAP111A3-10SXQT CYPAP111A3-10SXQT Infineon Technologies Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294 Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Connector: USB Micro
Mounting Type: Surface Mount
Voltage - Input: 85 ~ 265 VAC
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Input Type: Fixed Blade
Internal Switch(s): No
Voltage - Breakdown: 500V
Form: Wall Mount (Class II)
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Input Connector: NEMA 1-15P
Region Utilized: North America
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
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BCR420UE6433HTMA1 BCR420UE6433HTMA1 Infineon Technologies Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
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BCR420UE6433HTMA1 BCR420UE6433HTMA1 Infineon Technologies Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 132616 Stücke:
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34+0.53 EUR
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55+0.32 EUR
100+0.28 EUR
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1000+0.23 EUR
2500+0.22 EUR
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IPA082N10NF2SXKSA1 IPA082N10NF2SXKSA1 Infineon Technologies Infineon-IPA082N10NF2S-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0179176be5971162 Description: TRENCH >=100V PG-TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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BTS700121ESPXUMA2 BTS700121ESPXUMA2 Infineon Technologies Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7 Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
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3+7.11 EUR
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100+4.51 EUR
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1000+4.04 EUR
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BSC026N02KSGAUMA1 BSC026N02KSGAUMA1 Infineon Technologies BSC026N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c2a4280019 Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
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S29GL01GS11FHIV13 S29GL01GS11FHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11FHIV13 S29GL01GS11FHIV13 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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50+19.01 EUR
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250+17.48 EUR
500+16.86 EUR
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IR2308SPBF IR2308SPBF Infineon Technologies ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2308PBF IR2308PBF Infineon Technologies ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4126AZI-M475 CY8C4126AZI-M475 Infineon Technologies download Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2003PBF IRS2003PBF Infineon Technologies irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IR2109PBF IR2109PBF Infineon Technologies ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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100+3.35 EUR
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IAUTN06S5N008GATMA1 IAUTN06S5N008GATMA1 Infineon Technologies Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
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IAUTN06S5N008GATMA1 IAUTN06S5N008GATMA1 Infineon Technologies Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
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IAUTN06S5N008ATMA1 IAUTN06S5N008ATMA1 Infineon Technologies Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUTN06S5N008ATMA1 IAUTN06S5N008ATMA1 Infineon Technologies Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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S6BP401AM2SN1B200 Infineon Technologies Infineon-S6BP401A_Power_Management_IC_for_Automotive_ADAS_Platform-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed50c9b53cf Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS200R07A02E3S6BKSA3 Infineon Technologies Infineon-FS200R07A02E3_S6-DataSheet-v03_01-EN.pdf?fileId=5546d462636cc8fb016402b5998407c4 Description: HYBRID PACK DSC SI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: PG-MDIP-28
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 694 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 13500 pF @ 25 V
Produkt ist nicht verfügbar
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CY9AF112NPMC-GNE1 CY9AF112NPMC-GNE1 Infineon Technologies Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ETT540N22P60XPSA1 Infineon Technologies Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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CY8CLED04-68LTXI CY8CLED04-68LTXI Infineon Technologies CY8CLED04.pdf Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
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CY7C1383KV33-133AXI CY7C1383KV33-133AXI Infineon Technologies Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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72+46.10 EUR
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IRF150DM115XTMA1 IRF150DM115XTMA1 Infineon Technologies Infineon-IRF150DM115-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84c543dc4d4e Description: TRENCH >=100V DIRECTFET
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
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IPTG025N15NM6ATMA1 IPTG025N15NM6ATMA1 Infineon Technologies Infineon-IPTG025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740e75a702d Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
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IPTG025N15NM6ATMA1 IPTG025N15NM6ATMA1 Infineon Technologies Infineon-IPTG025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740e75a702d Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
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IPB95R130PFD7ATMA1 IPB95R130PFD7ATMA1 Infineon Technologies Infineon-IPB95R130PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb1106a02cb Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
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IPB95R130PFD7ATMA1 IPB95R130PFD7ATMA1 Infineon Technologies Infineon-IPB95R130PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb1106a02cb Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
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CG8354AF Infineon Technologies Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CG8354AF Infineon Technologies Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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CG8352AF CG8352AF Infineon Technologies Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
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TLD609812BEVALTOBO1 TLD609812BEVALTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD6098-1EP
Packaging: Bulk
Features: Dimmable
Voltage - Input: 8V ~ 27V
Current - Output / Channel: 1A
Utilized IC / Part: TLD6098-1EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
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IR3865MTRPBF IR3865MTRPBF Infineon Technologies IR3865MPBF.pdf Description: IC REG BUCK ADJ 10A 17PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PowerQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
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TDA19988BHN/C1,551 Infineon Technologies PHGL-S-A0002555885-1.pdf?t.download=true&u=5oefqw Description: TDA19988NHD1.transmittwithoHDenc
Packaging: Bulk
auf Bestellung 240 Stücke:
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90+5.28 EUR
Mindestbestellmenge: 90
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SGB15N60HSATMA1 SGB15N60HSATMA1 Infineon Technologies SGB15N60HS.pdf Description: IGBT NPT 600V 27A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 13ns/209ns
Switching Energy: 530µJ
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 138 W
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AIMZH120R040M1TXKSA1 AIMZH120R040M1TXKSA1 Infineon Technologies Infineon-AIMZH120R040M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea167a4a82 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.26 EUR
10+20.16 EUR
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BTS721L1 BTS721L1 Infineon Technologies Infineon-BTS721L1-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aa3ac546f0ff9 Description: IC PWR SWITCH N-CHAN 1:1 PDSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DD600N12KHPSA2 DD600N12KHPSA2 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MODULE GP 1.2KV 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Produkt ist nicht verfügbar
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CYW55501IUBGTXTMA1 Infineon Technologies Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW55502IUBGTXTMA1 Infineon Technologies Description: WI-FI COMBO IOT
Packaging: Tray
Produkt ist nicht verfügbar
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IPP018N03LF2SAKSA1 Infineon-IPP018N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cd1e162b8f
IPP018N03LF2SAKSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 110µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 15 V
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
11+1.68 EUR
100+1.40 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 8
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IPD06P003NATMA1 IPD06P003N.pdf
IPD06P003NATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 22A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.04mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Produkt ist nicht verfügbar
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S29GL512T10TFI040 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T10TFI040
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.07 EUR
10+15.85 EUR
25+15.36 EUR
40+15.11 EUR
91+14.68 EUR
Mindestbestellmenge: 2
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IM64D121AXTMA1
IM64D121AXTMA1
Hersteller: Infineon Technologies
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
Produkt ist nicht verfügbar
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IM64D121AXTMA1
IM64D121AXTMA1
Hersteller: Infineon Technologies
Description: XENSIV - IM64D121A AUTOMOTIVE ME
Packaging: Cut Tape (CT)
Output Type: Digital, PDM
Size / Dimension: 0.138" L x 0.104" W (3.50mm x 2.65mm)
Sensitivity: -26dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Ratings: IP57 - Dust Protected, Waterproof
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Grade: Automotive
Voltage - Rated: 1.8 V
Current - Supply: 1.4 A
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 10 kHz
Qualification: AEC-Q103
auf Bestellung 4718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.27 EUR
25+2.09 EUR
50+1.97 EUR
100+1.85 EUR
250+1.70 EUR
500+1.60 EUR
1000+1.51 EUR
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ESD160B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ESD160B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODES
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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CYTVII-B-H-8M-176-CPU Infineon-002-25907_0C_CYTVII-B-H-8M-176-CPU_EVALUATION_BOARD-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8b6555fe018baddfdf637dd4
CYTVII-B-H-8M-176-CPU
Hersteller: Infineon Technologies
Description: CPU_BOARD FOR TVII-B-H-4M-176
Packaging: Bulk
Mounting Type: Socket
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M7
Utilized IC / Part: CYT4BF
auf Bestellung 3 Stücke:
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Anzahl Preis
1+1217.57 EUR
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IPA60R1K5CEXKSA1 Infineon-IPA60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8c69e87218
IPA60R1K5CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Produkt ist nicht verfügbar
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TLE49SRC8XUMA1 TLE49SR.pdf
Hersteller: Infineon Technologies
Description: POSITION SENSORS
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49SRC8XUMA1 TLE49SR.pdf
Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: SPC
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.60 EUR
5+9.78 EUR
10+9.08 EUR
25+8.24 EUR
50+7.66 EUR
100+7.12 EUR
Mindestbestellmenge: 2
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TLE49SRP8XUMA1 TLE49SR.pdf
Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49SRP8XUMA1 TLE49SR.pdf
Hersteller: Infineon Technologies
Description: POSITION SENSORS
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: PWM
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: 20mT ~ 90mT
Current - Output (Max): 120µA
Current - Supply (Max): 16.5mA
Supplier Device Package: PG-TDSO-8-1
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.32 EUR
5+9.54 EUR
10+8.87 EUR
25+8.05 EUR
50+7.48 EUR
100+6.95 EUR
Mindestbestellmenge: 2
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S29GL128S10GHB013 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL128S10GHB013
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT CFI 56FBGA
Packaging: Cut Tape (CT)
Package / Case: 56-VFBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-FBGA (9x7)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 100 ns
Memory Organization: 16M x 8
Qualification: AEC-Q100
auf Bestellung 2700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.26 EUR
10+9.54 EUR
25+9.25 EUR
50+9.03 EUR
100+8.82 EUR
250+8.53 EUR
500+8.32 EUR
1000+8.11 EUR
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IPP020N03LF2SAKSA1 Infineon-IPP020N03LF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c901008d101902fe2ba53256d
IPP020N03LF2SAKSA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
10+1.77 EUR
100+1.32 EUR
500+1.07 EUR
Mindestbestellmenge: 7
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TLD5098EPVSEPICTOBO1 Infineon-TLD5098EP_VSEPIC-UserManual-v01_00-EN.pdf?fileId=5546d46274dd77260174eb6fd9eb0ae7
TLD5098EPVSEPICTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 8V ~ 27V
Current - Output: 1A
Contents: Board(s)
Frequency - Switching: 400kHz
Regulator Topology: Buck-Boost
Board Type: Fully Populated
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up or Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+113.48 EUR
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IMT65R107M1HXUMA1 Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0
IMT65R107M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.37 EUR
Mindestbestellmenge: 2000
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IMT65R107M1HXUMA1 Infineon-IMT65R107M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c872bd8d601876f66b5d971d0
IMT65R107M1HXUMA1
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.54 EUR
10+7.09 EUR
100+5.16 EUR
Mindestbestellmenge: 2
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ETD540N22P60XPSA1 Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a
ETD540N22P60XPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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FD401R17KF6CB2NOSA1 INFNS28314-1.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: FD401R17 - IGBT MODULE
Packaging: Bulk
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1349.57 EUR
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CYPAP111A3-10SXQT Infineon-PAG1P_Datasheet_Primary_Side_Startup_Controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9bdef7294
CYPAP111A3-10SXQT
Hersteller: Infineon Technologies
Description: PRIMARY SIDE STARTUP CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Output Connector: USB Micro
Mounting Type: Surface Mount
Voltage - Input: 85 ~ 265 VAC
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 70%
Frequency - Switching: 30kHz
Input Type: Fixed Blade
Internal Switch(s): No
Voltage - Breakdown: 500V
Form: Wall Mount (Class II)
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 85V ~ 265V
Supplier Device Package: 10-SOIC
Input Connector: NEMA 1-15P
Region Utilized: North America
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit, UVLO
Control Features: Frequency Control, Soft Start
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
12+1.49 EUR
25+1.35 EUR
100+1.19 EUR
250+1.12 EUR
500+1.07 EUR
1000+1.03 EUR
Mindestbestellmenge: 9
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BCR420UE6433HTMA1 Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6433HTMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 130000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.19 EUR
Mindestbestellmenge: 10000
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BCR420UE6433HTMA1 Infineon-BCR420U-BCR421U-DataSheet-v02_01-EN.pdf?fileId=5546d4626102d35a01617524f09e061d
BCR420UE6433HTMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER LINEAR 65MA SC74-6
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Applications: Lighting
Current - Output / Channel: 65mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 40V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 132616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
49+0.36 EUR
55+0.32 EUR
100+0.28 EUR
250+0.26 EUR
500+0.24 EUR
1000+0.23 EUR
2500+0.22 EUR
Mindestbestellmenge: 34
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IPA082N10NF2SXKSA1 Infineon-IPA082N10NF2S-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0179176be5971162
IPA082N10NF2SXKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V PG-TO220-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 30A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 46µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
412+1.23 EUR
Mindestbestellmenge: 412
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BTS700121ESPXUMA2 Infineon-BTS70012-1ESP-DataSheet-v01_20-EN.pdf?fileId=5546d462758f5bd1017598473e2a39a7
BTS700121ESPXUMA2
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-24
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1.4mOhm
Input Type: Non-Inverting
Voltage - Load: 4.1V ~ 28V
Voltage - Supply (Vcc/Vdd): 4.1V ~ 28V
Current - Output (Max): 31.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-24-32
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, UVLO
auf Bestellung 2044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.11 EUR
10+5.41 EUR
25+4.98 EUR
100+4.51 EUR
250+4.29 EUR
500+4.15 EUR
1000+4.04 EUR
Mindestbestellmenge: 3
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BSC026N02KSGAUMA1 BSC026N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c2a4280019
BSC026N02KSGAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
auf Bestellung 26892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
363+1.31 EUR
Mindestbestellmenge: 363
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S29GL01GS11FHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11FHIV13
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1600+15.87 EUR
Mindestbestellmenge: 1600
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S29GL01GS11FHIV13 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11FHIV13
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Cut Tape (CT)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.30 EUR
10+20.67 EUR
25+19.71 EUR
50+19.01 EUR
100+18.34 EUR
250+17.48 EUR
500+16.86 EUR
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IR2308SPBF ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2
IR2308SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2308PBF ir2308.pdf?fileId=5546d462533600a4015355c9a2b816e2
IR2308PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY8C4126AZI-M475 download
CY8C4126AZI-M475
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRS2003PBF irs2003pbf.pdf?fileId=5546d462533600a401535675afec2780
IRS2003PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2109PBF ir2109.pdf?fileId=5546d462533600a4015355c7e85b1679
IR2109PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.39 EUR
10+4.05 EUR
50+3.51 EUR
100+3.35 EUR
250+3.17 EUR
Mindestbestellmenge: 4
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IAUTN06S5N008GATMA1 Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd
IAUTN06S5N008GATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUTN06S5N008GATMA1 Infineon-IAUTN06S5N008G-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb34701863141615f0dfd
IAUTN06S5N008GATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.49 EUR
10+7.78 EUR
100+5.67 EUR
500+4.89 EUR
Mindestbestellmenge: 2
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IAUTN06S5N008ATMA1 Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa
IAUTN06S5N008ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IAUTN06S5N008ATMA1 Infineon-IAUTN06S5N008_Datasheet-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c85ecb3470186314156af0dfa
IAUTN06S5N008ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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S6BP401AM2SN1B200 Infineon-S6BP401A_Power_Management_IC_for_Automotive_ADAS_Platform-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed50c9b53cf
Hersteller: Infineon Technologies
Description: PMIC AUTO ANALOG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS200R07A02E3S6BKSA3 Infineon-FS200R07A02E3_S6-DataSheet-v03_01-EN.pdf?fileId=5546d462636cc8fb016402b5998407c4
Hersteller: Infineon Technologies
Description: HYBRID PACK DSC SI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: PG-MDIP-28
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 694 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 13500 pF @ 25 V
Produkt ist nicht verfügbar
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CY9AF112NPMC-GNE1
CY9AF112NPMC-GNE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 83
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ETT540N22P60XPSA1 Infineon-DS_eTT540N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4da56a366a
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 135°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16300A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 542 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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CY8CLED04-68LTXI CY8CLED04.pdf
CY8CLED04-68LTXI
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 56
DigiKey Programmable: Not Verified
auf Bestellung 78 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.40 EUR
10+11.17 EUR
25+10.37 EUR
Mindestbestellmenge: 2
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CY7C1383KV33-133AXI Infineon-CY7C1381KV33_CY_7C1381KVE33_CY7C1383KV33_CY_7C1383KVE33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed61b255667&utm_source=cypress&utm_medium=referral&ut
CY7C1383KV33-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+53.52 EUR
10+49.50 EUR
25+47.91 EUR
72+46.10 EUR
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IRF150DM115XTMA1 Infineon-IRF150DM115-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8eeb092c018f84c543dc4d4e
IRF150DM115XTMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V DIRECTFET
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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IPTG025N15NM6ATMA1 Infineon-IPTG025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740e75a702d
IPTG025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Produkt ist nicht verfügbar
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IPTG025N15NM6ATMA1 Infineon-IPTG025N15NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c90530b3a01907740e75a702d
IPTG025N15NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 264A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 120A, 15V
Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
Vgs(th) (Max) @ Id: 4V @ 275µA
Supplier Device Package: PG-HSOG-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 75 V
Produkt ist nicht verfügbar
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IPB95R130PFD7ATMA1 Infineon-IPB95R130PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb1106a02cb
IPB95R130PFD7ATMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+5.47 EUR
Mindestbestellmenge: 1000
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IPB95R130PFD7ATMA1 Infineon-IPB95R130PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81fb7ad20181fbb1106a02cb
IPB95R130PFD7ATMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 25.1A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.25mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 400 V
auf Bestellung 1678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.44 EUR
10+8.46 EUR
100+6.20 EUR
500+5.47 EUR
Mindestbestellmenge: 2
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CG8354AF
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 2388 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
65+7.38 EUR
Mindestbestellmenge: 65
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CG8354AF
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CG8352AF
CG8352AF
Hersteller: Infineon Technologies
Description: IC USB PERIPHERAL HS 56QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLD609812BEVALTOBO1
TLD609812BEVALTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLD6098-1EP
Packaging: Bulk
Features: Dimmable
Voltage - Input: 8V ~ 27V
Current - Output / Channel: 1A
Utilized IC / Part: TLD6098-1EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+230.33 EUR
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IR3865MTRPBF IR3865MPBF.pdf
IR3865MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 10A 17PWRQFN
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 10A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 17-PowerQFN (4x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
Produkt ist nicht verfügbar
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TDA19988BHN/C1,551 PHGL-S-A0002555885-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TDA19988NHD1.transmittwithoHDenc
Packaging: Bulk
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
90+5.28 EUR
Mindestbestellmenge: 90
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SGB15N60HSATMA1 SGB15N60HS.pdf
SGB15N60HSATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 27A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 13ns/209ns
Switching Energy: 530µJ
Test Condition: 400V, 15A, 23Ohm, 15V
Gate Charge: 80 nC
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 138 W
Produkt ist nicht verfügbar
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AIMZH120R040M1TXKSA1 Infineon-AIMZH120R040M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea167a4a82
AIMZH120R040M1TXKSA1
Hersteller: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 20A, 20V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1264 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.26 EUR
10+20.16 EUR
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BTS721L1 Infineon-BTS721L1-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aa3ac546f0ff9
BTS721L1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-20
Features: Auto Restart, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 85mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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DD600N12KHPSA2 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
DD600N12KHPSA2
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 600A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Produkt ist nicht verfügbar
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CYW55501IUBGTXTMA1
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CYW55502IUBGTXTMA1
Hersteller: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tray
Produkt ist nicht verfügbar
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